NGTB4N6FLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. Features Low Saturation Voltage using Trench with Field Stop Technology Low Switching Loss Reduces System Power Dissipation Soft Fast Reverse Recovery Diode Optimized for High Speed Switching s ShortCircuit Capability These are PbFree Devices 4 A, 6 V V CEsat =.8 V C Typical Applications Solar Inverters Uninterruptable Power Supply (UPS) ABSOLUTE MAXIMUM RATINGS G E Rating Symbol Value Unit Collectoremitter voltage V CES 6 V Collector current @ TC = 2 C @ TC = C I C 8 4 Pulsed collector current, T pulse I CM 6 A limited by T Jmax A G C E TO247 CASE 34L STYLE 4 Diode Forward Current @ T C = 2 C @ T C = C I F 8 4 Diode Pulsed Current I FM 6 A T pulse Limited by T Jmax A MARKING DIAGRAM Shortcircuit withstand time V GE = V, V CE = 3 V, T J + C Gateemitter voltage Transient Gate Emitter Voltage (t p = s, D <.) Power Dissipation @ TC = 2 C @ TC = C t SC s V GE 2 3 P D 27 2 V W 4N6FL AYWWG Operating junction temperature range T J to + C Storage temperature range T stg to + C Lead temperature for soldering, /8 from case for seconds T SLD 26 C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. A Y WW G ORDERING INFORMATION Device Package Shipping NGTB4N6FLWG = Assembly Location = Year = Work Week = PbFree Package TO247 (PbFree) 3 Units / Rail Semiconductor Components Industries, LLC, 23 July, 23 Rev. Publication Order Number: NGTB4N6FLW/D
NGTB4N6FLWG THERMAL CHARACTERISTICS Rating Symbol Value Unit Thermal resistance junctiontocase, for IGBT R JC.47 C/W Thermal resistance junctiontocase, for Diode R JC.6 C/W Thermal resistance junctiontoambient R JA 4 C/W ELECTRICAL CHARACTERISTICS (T J = 2 C unless otherwise specified) Parameter Test Conditions Symbol Min Typ Max Unit STATIC CHARACTERISTIC Collectoremitter breakdown voltage, gateemitter shortcircuited V GE = V, I C = A V (BR)CES 6 V Collectoremitter saturation voltage V GE = V, I C = 4 A V GE = V, I C = 4 A, T J = C V CEsat.6.8 2.3 2. V Gateemitter threshold voltage V GE = V CE, I C = 2 A V GE(th) 4.. 6. V Collectoremitter cutoff current, gate emitter shortcircuited V GE = V, V CE = 6 V V GE = V, V CE = 6 V, T J = C I CES.2 2 ma Gate leakage current, collectoremitter shortcircuited V GE = 2 V, V CE = V I GES na DYNAMIC CHARACTERISTIC Input capacitance C ies 42 pf Output capacitance V CE = 2 V, V GE = V, f = MHz C oes 7 Reverse transfer capacitance C res Gate charge total Q g 7 nc Gate to emitter charge V CE = 48 V, I C = 4 A, V GE = V Q ge 36 Gate to collector charge Q gc 83 SWITCHING CHARACTERISTIC, INDUCTIVE LOAD Turnon delay time t d(on) 8 ns Rise time t r 37 Turnoff delay time T J = 2 C t d(off) 74 Fall time V CC = 4 V, I C = 4 A R g = t f 73 Turnon switching loss V GE = V/ V E on.89 mj Turnoff switching loss E off.44 Total switching loss E ts.33 Turnon delay time t d(on) 82 ns Rise time t r 38 Turnoff delay time T J = C t d(off) 79 Fall time V CC = 4 V, I C = 4 A R g = t f 9 Turnon switching loss V GE = V/ V E on. mj Turnoff switching loss E off.84 Total switching loss E ts.94 2
NGTB4N6FLWG ELECTRICAL CHARACTERISTICS (T J = 2 C unless otherwise specified) Parameter Test Conditions Symbol Min Typ Max Unit DIODE CHARACTERISTIC Forward voltage V GE = V, I F = 4 A V GE = V, I F = 4 A, T J = C V F. 2.2 2.3 2.6 V Reverse recovery time T J = 2 C t rr 77 ns Reverse recovery charge I F = 4 A, V R = 2 V Q rr.3 C Reverse recovery current di F /dt = 2 A/ s I rrm 7 A 3
NGTB4N6FLWG TYPICAL CHARACTERISTICS 2 8 6 4 2 8 6 4 2 T J = 2 C 2 V GE = 7 V to 3 V 3 4 7 V 6 V V 9 V 8 V 7 8 8 6 4 2 8 6 4 T J = C V GE = 7 V to 3 V V V 9 V 2 8 V 7 V 2 3 4 6 7 8 Figure. Output Characteristics Figure 2. Output Characteristics 8 6 4 2 8 6 4 2 V GE = 7 V to 3 V 2 3 4 T J = C V V 9 V 7 V to 8 V 6 7 8 6 4 2 8 6 4 2 4 8 T J = 2 C T J = C 2 6 V GE, GATEEMITTER VOLTAGE (V) Figure 3. Output Characteristics Figure 4. Typical Transfer Characteristics 3. 2. 2.... 7 I C = 6 A I C = 4 A I C = 2 A I C = A 2 2 7 2 7 2 CAPACITANCE (pf), 2 4 C ies C oes C res 6 8 T J, JUNCTION TEMPERATURE ( C) Figure. V CE(sat) vs. T J Figure 6. Typical Capacitance 4
NGTB4N6FLWG TYPICAL CHARACTERISTICS 7 2 I F, FORWARD CURRENT (A) 6 4 3 2... T J = 2 C T J = C 2. 2. 3. V GE, GATEEMITTER VOLTAGE (V) V CE = 48 V V CE = 4 V V GE = V I C = 4 A 2 7 2 7 2 V F, FORWARD VOLTAGE (V) Q G, GATE CHARGE (nc) Figure 7. Diode Forward Characteristics Figure 8. Typical Gate Charge.4 SWITCHING LOSS (mj).2.8.6.4.2 2 4 6 8 E on 2 E off T J, JUNCTION TEMPERATURE ( C) Figure 9. Switching Loss vs. Temperature SWITCHING TIME (ns) t d(off) t d(on) tf V CE = 4 V V GE = V V CE = 4 V I C = 4 A V GE = V Rg = I C = 4 A Rg = 4 6 8 2 2 4 6 8 2 4 6 8 2 T J, JUNCTION TEMPERATURE ( C) Figure. Switching Time vs. Temperature t r SWITCHING LOSS (mj) 2. V CE = 4 V V GE = V 2 T J = C E on Rg =.. 2 E off 3 6 8 SWITCHING TIME (ns) t d(off) t f t d(on) t r V CE = 4 V V GE = V T J = C Rg = 2 3 6 8 Figure. Switching Loss vs. I C Figure 2. Switching Time vs. I C
NGTB4N6FLWG TYPICAL CHARACTERISTICS SWITCHING LOSS (mj) 4. 4 3. 3 2. 2.. V CE = 4 V V GE = V I C = 4 A T J = C 2 3 4 E on E off 6 7 8 SWITCHING TIME (ns) t f t d(off) t r 2 3 4 6 t d(on) V CE = 4 V V GE = V I C = 4 A T J = C 7 8 Rg, GATE RESISTOR ( ) Rg, GATE RESISTOR ( ) Figure 3. Switching Loss vs. Rg Figure 4. Switching Time vs. Rg SWITCHING LOSS (mj) 2.4.8.2.6 7 V GE = V I C = 4 A Rg = T J = C 22 27 32 37 42 E on 47 E off Figure. Switching Loss vs. V CE 2 7 SWITCHING TIME (ns) t d(off) t r V GE = V I C = 4 A Rg = T J = C 7 22 27 32 37 42 47 2 7 Figure 6. Switching Time vs. V CE t f t d(on) ms dc operation Single Nonrepetitive Pulse T C = 2 C. Curves must be derated linearly with increase in temperature. s s Figure 7. Safe Operating Area V GE = V, T C = 2 C Figure 8. Reverse Bias Safe Operating Area 6
NGTB4N6FLWG TYPICAL CHARACTERISTICS % Duty Cycle R JC =.47 R(t) ( C/W).... 2% % % 2% Single Pulse Junction R R 2 R n Case C i = i /R i C C 2..... PULSE TIME (sec) Figure 9. IGBT Transient Thermal Impedance Duty Factor = t /t 2 Peak T J = P DM x Z JC + T C C n R i ( C/W) i (sec).792.39..3623.28.973.88.296.33233.39.2448.46...439.7634.27633.36892. 36.228.3998.32347 % Duty Cycle R JC =.6 R(t) ( C/W) 2%. Junction R R 2 R n Case R i ( C/W) i (sec) %.243.48E4.42428.2 % C i = i /R i.36.3. 2%.34767. C C 2 C n.3 2. % Single Pulse Duty Factor = t /t 2 Peak T J = P DM x Z JC + T C....... PULSE TIME (sec) Figure 2. Diode Transient Thermal Impedance Figure 2. Test Circuit for Switching Characteristics 7
NGTB4N6FLWG PACKAGE DIMENSIONS TO247 CASE 34L2 ISSUE F N A K F 2 PL B U L 2 3 P Y W J G D 3 PL.2 (.) M Y Q S C T E H 4 Q.63 (.2) M T B M NOTES:. DIMENSIONING AND TOLERANCING PER ANSI Y4.M, 982. 2. CONTROLLING DIMENSION: MILLIMETER. MILLIMETERS INCHES DIM MIN MAX MIN MAX A 2.32 2.8.8 8.3 B.7 6.26.62.64 C 4.7.3.8.29 D..4.4. E.9 2.6.7.2 F.6 2.3.6.84 G.4 BSC.2 BSC H. 2.49.9.98 J.4.8.6.3 K 9.8 2.83.78.82 L.4 6.2.22.244 N 4.32.49.7.26 P --- 4. ---.77 Q 3. 3.6.4.44 U 6. BSC.242 BSC W 2.87 3.2.3.23 STYLE 4: PIN. GATE 2. COLLECTOR 3. EMITTER 4. COLLECTOR ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC s product/patent coverage may be accessed at www.onsemi.com/site/pdf/patentmarking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 63, Denver, Colorado 827 USA Phone: 336727 or 8344386 Toll Free USA/Canada Fax: 3367276 or 83443867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 828298 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 42 33 79 29 Japan Customer Focus Center Phone: 8387 8 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative NGTB4N6FLW/D