BC846...BC8... NPN Silicon AF Transistors For AF input stages and driver applications High current gain Low collectoremitter saturation voltage Low noise between Hz and khz Complementary types: BC86...BC86...(PNP) Pbfree (RoHS compliant) package ) Qualified according AEC Q Pbcontaining package may be available upon special request 74
74 BC846...BC8... Type Marking Pin Configuration Package BC846A BC846B BC846BW BC847A BC847B BC847BF BC847BL BC847BT BC847BW BC847C BC847CW BC848A BC848AW BC848B BC848BF BC848BL BC848BW BC848C BC848CW BC849B BC849BF BC849C BC849CW BC8B BF8BF BC8BW BC8C BC8CW As Bs Bs Es Fs Fs F F Fs Gs Gs Js Js Ks Ks K Ks Ls Ls Bs Bs Cs Cs Fs Fs Fs Gs Gs SOT SOT SOT SOT SOT TSFP TSLP SC7 SOT SOT SOT SOT SOT SOT TSFP TSLP SOT SOT SOT SOT TSFP SOT SOT SOT TSFP SOT SOT SOT
BC846...BC8... Maximum Ratings Parameter Symbol Value Unit Collectoremitter voltage BC846... BC847..., BC8... BC848..., BC849... Collectoremitter voltage BC846... BC847..., BC8... BC848..., BC849... Collectorbase voltage BC846... BC847..., BC8... BC848..., BC849... Emitterbase voltage BC846... BC847..., BC8... BC848..., BC849... V CEO V CES V CBO V EBO V 6 4 8 8 6 6 6 Collector current I C ma Peak collector current I CM Total power dissipation T S 7 C, BC846BC8 T S 8 C, BC847FBC8F T S C, BC847LBC848L T S 9 C, BC847T T S 4 C, BC846WBC8W P tot mw Junction temperature T j C Storage temperature T stg 6... 74
BC846...BC8... Thermal Resistance Parameter Symbol Value Unit Junction soldering point ) R thjs K/W BC846BC8 BC847FBC8F BC847LBC848L BC847T BC846WBC8W 4 9 6 6 For calculation of R thja please refer to Application Note Thermal Resistance 4 74
BC846...BC8... Electrical Characteristics at T A = C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics Collectoremitter breakdown voltage V (BR)CEO V I C = ma, I B =, BC846... I C = ma, I B =, BC847..., BC8... I C = ma, I B =, BC848..., BC849... 6 4 Collectorbase breakdown voltage V (BR)CBO I C = µa, I E =, BC846... 8 I C = µa, I E =, BC847..., BC8... I C = µa, I E =, BC848..., BC849... Emitterbase breakdown voltage I E =, I C = µa Collectorbase cutoff current V CB = 4 V, I E = V CB = V, I E =, T A = C DC current gain ) I C = µa, V CE = V, h FE grp.a I C = µa, V CE = V, h FE grp.b I C = µa, V CE = V, h FE grp.c I C = ma, V CE = V, h FE grp.a I C = ma, V CE = V, h FE grp.b I C = ma, V CE = V, h FE grp.c V (BR)EBO 6 I CBO h FE. 4 48 8 9 4 4 8 µa Collectoremitter saturation voltage ) V CEsat mv I C = ma, I B =. ma 9 I C = ma, I B = ma 6 Base emitter saturation voltage ) V BEsat I C = ma, I B =. ma 7 I C = ma, I B = ma 9 Baseemitter voltage ) V BE(ON) I C = ma, V CE = V 8 66 7 I C = ma, V CE = V 77 Pulse test: t < µs; D < % 74
BC846...BC8... Electrical Characteristics at T A = C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. AC Characteristics Transition frequency f T MHz I C = ma, V CE = V, f = MHz Collectorbase capacitance C cb.9 pf V CB = V, f = MHz Emitterbase capacitance V EB =. V, f = MHz C eb 9 Shortcircuit input impedance I C = ma, V CE = V, f = khz, h FE grp.a I C = ma, V CE = V, f = khz, h FE grp.b I C = ma, V CE = V, f = khz, h FE grp.c Opencircuit reverse voltage transf. ratio I C = ma, V CE = V, f = khz, h FE grp.a I C = ma, V CE = V, f = khz, h FE grp.b I C = ma, V CE = V, f = khz, h FE grp.c h e h e.7 4. 8.7. kω 4 Shortcircuit forward current transf. ratio I C = ma, V CE = V, f = khz, h FE grp.a I C = ma, V CE = V, f = khz, h FE grp.b I C = ma, V CE = V, f = khz, h FE grp.c Opencircuit output admittance I C = ma, V CE = V, f = khz, h FE grp.a I C = ma, V CE = V, f = khz, h FE grp.b I C = ma, V CE = V, f = khz, h FE grp.c Noise figure I C = µa, V CE = V, f = khz, f = Hz, R S = kω, BC849..., BC8... Equivalent noise voltage I C = µa, V CE = V, R S = kω, f =... Hz, BC8... h e h e 6 µs 8 6 F. 4 db V n. µv 6 74
BC846...BC8... DC current gain h FE = ƒ(i C ) V CE = V Collectoremitter saturation voltage I C = ƒ(v CEsat ), h FE = EHP6 EHP67 h FE C Ι C ma C C C C C ma....4 V. Ι C V CEsat Baseemitter saturation voltage I C = ƒ(v BEsat ), h FE = Collector cutoff current I CBO = ƒ(t A ) V CB = V EHP64 4 EHP4 na Ι C ma Ι CB C C C max typ..4.6.8 V. C V BEsat T A 7 74
BC846...BC8... Transition frequency f T = ƒ(i C ) V CE = V Collectorbase capacitance C cb = ƒ(v CB ) Emitterbase capacitance C eb = ƒ(v EB ) f T MHz EHP6 pf CCB/CEB 9 8 7 6 4 CEB ma Total power dissipation P tot = ƒ(t S ) BC846BC8 Ι C CCB 4 8 6 V V CB /V EB Total power dissipation P tot = ƒ(t S ) BC847BFBC8BF 6 mw mw 7 Ptot 4 Ptot 7 8 9 7 6 4 6 7 9 C T S 4 6 7 9 C T S 8 74
BC846...BC8... Total power dissipation P tot = ƒ(t S ) BC847BL/BC848BL Total power dissipation P tot = ƒ(t S ) BC847BT mw mw Ptot 7 Ptot 7 7 7 4 6 7 9 C T S 4 6 7 9 C T S Total power dissipation P tot = ƒ(t S ) BC846WBC8W Permissible Pulse Load P totmax /P totdc = ƒ(t p ) BC846/WBC8/W mw P P tot max tot DC t p = D T t p T EHP6 Ptot 7 D =....... 7 4 6 7 9 C T S 6 4 s t p 9 74
BC846...BC8... Permissible Puls Load R thjs = ƒ (t p ) BC847BFBC8BF Permissible Pulse Load P totmax /P totdc = ƒ(t p ) BC847BFBC8BF RthJS K/W D=....... Ptotmax/PtotDC D=....... 6 4 s t p Permissible Puls Load R thjs = ƒ (t p ) BC847BL, BC848BL 6 4 s t p Permissible Pulse Load P totmax /P totdc = ƒ(t p ) BC847BL, BC848BL RthJS....... D = Ptotmax/ PtotDC D =....... 7 6 4 s t p 7 6 4 s t p 74
BC846...BC8... Permissible Puls Load R thjs = ƒ (t p ) BC847BT Permissible Pulse Load P totmax /P totdc = ƒ(t p ) BC847BT K/W RthJS D=....... Ptotmax / PtotDC D=....... 6 4 s t p Noise figure F = ƒ(v CE ) I C =.ma, R S = kω, f = khz 6 4 s t p Noise figure F = ƒ(f) I C =. ma, V CE = V, R S = kω BC 846...8 EHP7 BC 846...8 EHP7 F db F db V V CE khz f 74
BC846...BC8... Noise figure F = ƒ(i C ) V CE = V, f = Hz Noise figure F = ƒ(i C ) V CE = V, f = khz BC 846...8 EHP7 BC 846...8 EHP7 F db F db R S = MΩ kω kω R S = MΩ kω kω Ω kω kω Ω ma Ι C ma Ι C Noise figure F = ƒ(i C ) V CE = V, f = khz F db BC 846...8 EHP74 R S = MΩ kω Ω kω kω ma Ι C 74
Package SC7 BC846...BC8... Package Outline.6 ±. +.... MAX..7 ±. A +..... M..6 ±. MAX.. M A. ±..8 ±. MAX. Foot Print.4.6..6...4 Marking Layout (Example), December Date code Pin BCR8T Type code Standard Packing Reel ø8 mm =. Pieces/Reel Reel ø mm =. Pieces/Reel 4.4. MAX..8 8.4 Pin.7.9 74
BC846...BC8... Date Code marking for discrete packages with one digit (SCD8, SC79, SC7 ) ) CESCode Month 4 6 7 8 9 4 a p A P a p A P a p A P b q B Q b q B Q b q B Q c r C R c r C R c r C R 4 d s D S d s D S d s D S e t E T e t E T e t E T 6 f u F U f u F U f u F U 7 g v G V g v G V g v G V 8 h x H X h x H X h x H X 9 j y J Y j y J Y j y J Y k z K Z k z K Z k z K Z l L 4 l L 4 l L 4 n N n N n N ) New Marking Layout for SC7, implemented at October.. 4 74
Package SOT BC846...BC8... Package Outline +. ).4..9 ±..9 B C.9.4 ±.. MIN. MAX. ±.. MAX....8 MAX..8.... ±. A. M BC. M A Foot Print ) Lead width can be.6 max. in dambar area.8.8..9..9 Marking Layout (Example) EH s Manufacturer, June Date code (YM) Pin BCW66 Type code Standard Packing Reel ø8 mm =. Pieces/Reel Reel ø mm =. Pieces/Reel 4.9. 8..6 Pin.. 74
Package SOT BC846...BC8... Package Outline ±.. +.. x. M. MAX...9 ±. A.6.6.±.. MIN.. +... ±.. M A Foot Print.6 Marking Layout (Example) Standard Packing Reel ø8 mm =. Pieces/Reel Reel ø mm =. Pieces/Reel 4.. 8.8.6.6.6 Manufacturer, June Date code (YM) Pin BCR8W Type code Pin.. 6 74
Package TSFP BC846...BC8... Package Outline. ±.. ±.. ±..4 ±..4 ±.. ±.. ±.. ±.4. ±. MAX..8 ±. Foot Print.4.4..4.4 Marking Layout (Example) Manufacturer Pin BCR847BF Type code Standard Packing Reel ø8 mm =. Pieces/Reel Reel ø mm =. Pieces/Reel 4.. 8.. Pin..7 7 74
Package TSLP BC846...BC8... Package Outline Top view Bottom view. MAX..4 +..6 ±. ). ±..6 ±. ). ±. ±. Pin marking ) Dimension applies to plated terminal. ±. ) x. ±. Foot Print For board assembly information please refer to Infineon website "Packages".. Copper Solder mask Stencil apertures Marking Layout (Example) BFR9L Type code Pin marking Laser marking Standard Packing Reel ø8 mm =. Pieces/Reel 4..6 8 ) x. ±..6.....94.4.7.. R...7. Pin marking.76 8 74
BC846...BC8... Edition 6 Published by Infineon Technologies AG 876 München, Germany Infineon Technologies AG 7. All Rights Reserved. Attention please! The information given in this dokument shall in no event be regarded as a guarantee of conditions or characteristics ( Beschaffenheitsgarantie ). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of noninfringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office ( www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in lifesupport devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that lifesupport device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 9 74