Electronic upplementary Material (EI) for Nanoscale. This journal is The Royal ociety of hemistry 17 Electronic upplementary Information Grating-coupled surface plasmon resonance enhanced organic photovoltaic devices induced by lu-ray disc recordable and lu-ray disc grating structures upeera Nootchanat, a, b Apichat angdam, a, b Ryousuke Ishikawa, a Kanet Wongravee, b Kazunari hinbo, a Keizo Kato, a Futao Kaneko, a anong Ekgasit, b* and Akira aba a* a Graduate chool of cience and Technology, Niigata University, 80, Ikarashi 2-nocho, Nishi-ku, Niigata 9-2181, Japan. E-mail: ababa@eng.niigata-u.ac.jp b ensor Research Unit, Department of hemistry, Faculty of cience, hulalongkorn University, angkok 103, Thailand. E-mail: sanong.e@chula.ac.th
A a 3 nm b 3 nm c 3 nm 380 nm 4 nm d D a-b c-d Fig. 1 AFM images showing the cleaned surfaces of the (A) D-R and () D master templates. ross-section profiles of () D-R and (D) D corresponding to lines a b and c d in (A) and (), respectively.
A olar cell olar cell Electric wire Linear polarizer Electric wire Light source probe Light source probe olar imulator otentiostat olar imulator otentiostat Fig. 2 hotocurrent measurement apparatus for Os under irradiation of (A) non- polarized and () polarized light..
A b a e c d f D E F a-b c-d e-f Fig. 3 AFM images showing the surface morphology of 3HT:M films after nanoimprinting of D-R pattern for imprinting on a (A) damp film without thermal annealing, () dried film without thermal annealing, and () dried film with thermal annealing at 100. Each imprinting was formed for min after attachment of the D-R mold.
A a X X X X b c X X d a-b c-d Fig. 4 (A) 3D AFM image, () AFM image, and () cross-sectional profiles showing the morphology of the D-R grating pattern on the surface of the 3HT:M layer of a fabricated solar cell.
A a X X X X c X X X d b e X X f a-b c-d e-f Fig. 5 3D AFM micrograph, () AFM micrograph, and () corresponding AFM line profiles showing the morphology of the D grating pattern on the surface of the 3HT:M layer of a fabricated solar cell.
A Fig. 6 AFM images showing the surface morphology of the aluminum electrodes of a (A) flat solar cell, () D-R solar cell, and () D solar cell.
A s-pol 0 4 0 5 0 6 0 7 800 p-pol 0 4 0 5 0 6 0 7 800 s-pol 0 4 0 5 0 6 0 7 800 p-pol 0 4 0 5 0 6 0 7 800 s-pol 0 4 0 5 0 6 0 7 800 p-pol 0 4 0 5 0 6 0 7 800 D θ i θ r Al Fig. 7 curves of (A) flat aluminum film, () aluminum-coated D-R grating, and () aluminum-coated D grating at various incident angles. The reflectivity curves were measured under illumination of s- and p-polarized light. (D) chematic illustrating the light reflection on the textured aluminum films.
A s-pol p-pol θ Glass ITO EDOT: 3HT:M Al 0 0 0 0 800 0 0 0 0 800 s-pol p-pol θ Glass ITO EDOT: 3HT:M Al 0 0 0 0 800 0 0 0 0 800 s-pol p-pol θ Glass ITO EDOT: 3HT:M Al 0 0 0 0 800 0 0 0 0 800 Fig. 8 curves and corresponding schematic of (A) flat solar cell, () D-R solar cell, and () D solar cell. The reflectivity curves were measured at various incident angles under illumination of s- and p-polarized light. (D) chematic illustrating the light reflection on the textured aluminum films.
Table 1 Electrical parameters of the fabricated Os Jsc, Voc, E, and FF. The electrical parameters were determined from J V characterization under an illumination intensity of 75 mw/cm 2 at normal incident angle. Device J sc (ma/cm 2 ) V oc(vol) E (%) FF (%) Flat 6.07±0.17 0.59±2 2.49±2 0.54±4 D-R 6.68±5 0±2 2.97±0 0.57±3 D 6.41±1 0±1 2.57±0.19 0.±4
urrent density (µa/cm 2 ) urrent density (µa/cm 2 ) urrent density (µa/cm 2 ) urrent density (µa/cm 2 ) urrent density (µa/cm 2 ) urrent density (µa/cm 2 ) urrent density (µa/cm 2 ) 0.3 A Flat solar cell D-R solar cell D solar cell 0.1 Wav elength (nm) 0.3 Flat solar cell D-R solar cell 0.3 Flat solar cell D-R solar cell D solar cell D solar cell 0.1 0.1 Wav elength (nm) Wav elength (nm) 0.3 D Flat solar cell D-R solar cell 0.3 E Flat solar cell D-R solar cell D solar cell D solar cell 0.1 0.1 Wav elength (nm) Wav elength (nm) 0.3 F Flat solar cell D-R solar cell 0.3 G Flat solar cell D-R solar cell D solar cell D solar cell 0.1 0.1 Wav elength (nm) Wav elength (nm) Fig. 9 pectral photocurrent properties of the fabricated solar cells collected at incident angles of (A) 0, (), (), (D), (E), (F), and (G).
10 A 5 10 10 5 5 10 D 10 E 5 5 10 F 10 G 5 5 0 0 0 0 800 900 Fig. 10 pectral photocurrent spectra of a flat O collected at incident angles of (A) 0, (), (), (D), (E), (F), and (G). The spectral photocurrent spectra were recorded under illumination of polarized light.
urrent Density (na/cm3) 10 A 5 10 10 5 5 10 D 10 E 5 5 0 0 0 0 800 900 10 F 10 G 5 5 Fig. 11 pectral photocurrent spectra of a D-R O collected at incident angles of (A) 0, (), (), (D), (E), (F), and (G). The spectral photocurrent spectra were recorded under illumination of polarized light.
10 A 5 10 10 5 5 10 D 10 E 5 5 10 F 10 G 5 5 0 0 0 0 800 900 Fig. 12 pectral photocurrent spectra of a D O collected at incident angles of (A) 0, (), (), (D), (E), (F), and (G). The spectral photocurrent spectra were recorded under illumination of polarized light.
Table 2 Jsc of the fabricated Os under irradiation of s-pol light. The illumination intensity was 75 mw/cm 2. Incident angle J sc (ma/cm 2 ) improvement of J sc (ma/cm 2 ) Flat O D-R O D O D-R O D O 0 3.89 4.23 4.06 0.34 (8.74 %) 0.17 (4.33) 3.73 4.01 3.83 8 (7.49 %) 0.10 (2.67) 3.54 3.73 3.58 0 (5.56 %) 4 (8) 3.23 3.36 3. 0.13 (3.92 %) -3 (-5) 2.80 2.86 2. 6 (2.08 %) -0.10 (-3.61) 2.22 2.23 2.04 1 (1 %) -0.17 (-7.78) 1.49 1.42 1.28-7 (-4.93 %) -1 (-14.16)
Table 3 Jsc of the fabricated Os under irradiation of p-pol light. The illumination intensity was 75 mw/cm 2. Incident angle J sc (ma/cm 2 ) improvement of J sc (ma/cm 2 ) Flat O D-R O D O D-R O D O 0 3.88 4.29 4.05 1 (10.53 %) 0.17 (4.26 %) 3.74 4.11 3.86 0.37 (9.94 %) 0.12 (3.18 %) 3.57 3.86 3.65 9 (8.21 %) 8 (2.26 %) 3. 3.52 3.33 2 (6.69 %) 3 (0.94 %) 2.92 3.11 2.89 0.19 (6.51 %) -4 (-1.22 %) 2.39 2.55 2.29 0.16 (6.63 %) -0.10 (-4.10 %) 1. 1.76 1.56 5 (3.16 %) -0.14 (-8.13 %)