OUR IIT L ISPLY (0.36 Inch) Pb Lead-ree Parts L315/65-XX-P T SHT O. NO : QW0905- L315/65-XX-P-08 RV. : T : 01 - Sep. - 2009 發行 立碁電子
PRT NO. L315/65-XX-P Page 1/8 Package imensions 29.5(1.161") 7.1(0.28") PIN 12 PIN 7 I.1 I.2 I.3 I.4 9.2 (0.36") 14.0 (0.551").72 (0.422") PIN 1 PIN 6 ψ(0.039") L315/65-XX-P LIITK PIN NO.1 Ø 0.51 TYP 2.54X5=12.7 (0.5") 4.3±0.5 Note : 1.ll dimension are in millimeters and (lnch) tolerance is ±0.25mm unless otherwise noted. 2.Specifications are subject to change without notice.
PRT NO. L315/65-XX-P Page 2/8 Internal ircuit iagram L3155-XX-P L3165-XX-P 11 7 4 2 1 5 3 I.1 12 11 7 4 2 1 5 3 I.1 12 I.2 9 I.2 9 I.3 8 I.3 8 I.4 6 I.4 6
PRT NO. L315/65-XX-P Page 3/8 lectrical onnection PIN NO.1 L3155-XX-P PIN NO.1 L3165-XX-P 1 node 1 athode 2 node 2 athode 3 node 3 athode 4 node 4 athode 5 node 5 athode 6 ommon athode ig.4 6 ommon node ig.4 7 node 7 athode 8 ommon athode ig.3 8 ommon node ig.3 9 ommon athode ig.2 9 ommon node ig.2 node athode 11 node 11 athode 12 ommon athode ig.1 12 ommon node ig.1
PRT NO. L315/65-XX-P Page 4/8 bsolute Maximum Ratings at Ta=25 Parameter Symbol Ratings Red UNIT orward urrent Per hip I 15 m Peak orward urrent Per hip (uty 1/,0.1ms Pulse Width) IP 70 m Power issipation Per hip P 50 mw Reverse urrent Per ny hip Ir μ Operating Temperature Topr -25 ~ +85 Storage Temperature Tstg -25 ~ +85 Part Selection nd pplication Information(Ratings at 25 ) PRT NO HIP Material mitted common cathode or anode λp (nm) λ (nm) lectrical Vf(v) Iv(mcd) Min. Typ. Min. Typ. IV-M L3155-XX-P L3165-XX-P als Red ommon athode ommon node 660 20 1.5 2.1 1.75 3.05 2:1 Note : 1.The forward voltage data did not including ±0.1V testing tolerance. 2. The luminous intensity data did not including ±15% testing tolerance.
PRT NO. L315/65-XX-P Page 5/8 Test ondition or ach Parameter Parameter Symbol Unit Test ondition orward Voltage Per hip Vf volt If=m Luminous Intensity Per hip Iv mcd If=m Peak Wavelength λp nm If=20m Spectral Line Half-Width λ nm If=20m Reverse urrent ny hip Ir μ Vr=5V Luminous Intensity Matching Ratio IV-M
PRT NO. L315/65-XX-P Page6/8 Typical lectro-optical haracteristics urve SR HIP ig.1 orward current vs. orward Voltage ig.2 Relative Intensity vs. orward urrent 00 3.0 orward urrent(m) 0 0.1 2.0 3.0 4.0 5.0 Relative Intensity Normalize @20m 2.5 2.0 1.5 0.5 0.0 0 00 orward Voltage(V) orward urrent(m) ig.3 orward Voltage vs. Temperature ig.4 Relative Intensity vs. Temperature orward Voltage@20m Normalize @25 1.2 1.1 0.9 0.8-40 -20 0 20 40 60 Relative Intensity@20m Normalize @25 3.0 2.5 2.0 1.5 0.5 0.0 80 0-40 -20 0 20 40 60 80 0 mbient Temperature( ) mbient Temperature( ) ig.5 Relative Intensity vs. Wavelength Relative Intensity@20m 0.5 0.0 600 650 700 750 Wavelength (nm)
PRT NO. L315/65-XX-P Page 7/8 Soldering ondition(pb-ree) 1.Iron: Soldering Iron:30W Max Temperature 350 Max Soldering Time:3 Seconds Max(One time only) istance:solder Temperature 1/16 Inch elow Seating Plane or 3 Seconds t 260 2.Wave Soldering Profile ip Soldering Preheat: 120 Max Preheat time: 60seconds Max Ramp-up 2 /sec(max) Ramp-own:-5 /sec(max) Solder ath:260 Max ipping Time:3 seconds Max istance:solder Temperature 1/16 Inch elow Seating Plane or 3 Seconds t 260 Temp( ) 260 260 3sec Max 5 /sec max 120 25 0 0 2 /sec max Preheat 60 Seconds Max 50 0 150 Time(sec) Note: 1.Wave solder should not be made more than one time. 2.You can just only select one of the soldering conditions as above.
PRT NO. L315/65-XX-P Page 8/8 Reliability Test: Test Item Test ondition escription Reference Standard Operating Life Test 1.Under Room Temperature 2.If=m 3.t=00 hrs (-24hrs, +72hrs) This test is conducted for the purpose of detemining the resistance of a part in electrical and themal stressed. MIL-ST-750: 26 MIL-ST-883: 05 JIS 7021: -1 High Temperature Storage Test 1.Ta=5 ±5 2.t=00 hrs (-24hrs, +72hrs) The purpose of this is the resistance of the device which is laid under condition of high temperature for hours. MIL-ST-883:08 JIS 7021: - Low Temperature Storage Test 1.Ta=-40 ±5 2.t=00 hrs (-24hrs, +72hrs) The purpose of this is the resistance of the device which is laid under condition of low temperature for hours. JIS 7021: -12 High Temperature High Humidity Test 1.Ta=65 ±5 2.RH=90%~95% 3.t=240hrs ±2hrs The purpose of this test is the resistance of the device under tropical for hours. MIL-ST-202:3 JIS 7021: -11 Thermal Shock Test 1.Ta=5 ±5 &-40 ±5 (min) (min) 2.total cycles The purpose of this is the resistance of the device to sudden extreme changes in high and low temperature. MIL-ST-202: 7 MIL-ST-750: 51 MIL-ST-883: 11 Solder Resistance Test 1.T.Sol=260 ±5 2.well time= ±1sec. This test intended to determine the thermal characteristic resistance of the device to sudden exposures at extreme changes in temperature when soldering the lead wire. MIL-ST-202: 2 MIL-ST-750: 2031 JIS 7021: -1 Solderability Test 1.T.Sol=230 ±5 2.well time=5 ±1sec This test intended to see soldering well performed or not. MIL-ST-202: 208 MIL-ST-750: 2026 MIL-ST-883: 2003 JIS 7021: -2