High Brightness Electrodeless Z-Pinch TM EUV Source for Mask Inspection Tools

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High Brightness Electrodeless Z-Pinch TM EUV Source for Mask Inspection Tools Stephen F. Horne, Matthew M. Besen, Matthew J. Partlow, Donald K. Smith, Paul A. Blackborow, Deborah S. Gustafson

Agenda Background on the EQ-10 Electrodeless Z-Pinch TM EUV source New Metrology Improvements of source to increase power and brightness Modeling of Laser Enhanced EUV Source Summary

B Electrodeless Z-Pinch EUV Source B Magnetic Field Z-Pinched Plasma A Slow pulse from modulator. Capacitor banks charge up. Outer core saturates. Impedance 0 Capacitor discharges. A (Pulse compression) Inner core couples current pulse to plasma loops. capacitor banks not shown Pulse in plasma current Z-pinch!

System Reliability Introduced in 2005 Shipped over 18 sources in the field Installations in Japan, Europe and US Systems being operated 24/7 with minimal downtime Systems integrated into tools for research and development Actinic Inspection Resist Outgassing Mask Contamination Optics Testing

Recent Improvements in EQ-10 Brightness and Power

New Dual Diagnostic Brightness Measurements CCD Camera In Band Power Monitor 45 Degree Mirror EUV Power Monitor is calibrated at NIST

peak/(exp*gcf*20000) Better Correlation for Brightness Allows brightness estimate by camera image Can optimize source while operating to find brightest plasma 8 7 6 5 4 3 2 1 0 y = 0.9976x R 2 = 0.9624 0 1 2 3 4 5 6 7 8 calc brightness

Power at 13.5nm 2%BW Power ~ 25 Watts into 2π 25 20 Power at 13.5 nm Spectrally Corrected 7 kw Operation 15 10 300V, 2570 Hz 320V, 2200Hz 340V 1930Hz 5 0 50 70 90 110 130 Pressure (mt)

FWHM (mm) Size Controllable via Pressure 900 800 700 280V_1900Hz 280V_2200Hz 300V_2200Hz 300V_2570Hz 320V_2200Hz 340V_1930Hz 600 500 400 300 50 60 70 80 90 100 110 120 130 Source Pressure (mt)

Brightness at 13.5nm 2%BW [W/mm 2 /sr] Brightness Optimizes at Higher Pressure 9 8 7 6 5 4 3 2 1 0 300V, 2570 Hz 320V, 2200Hz 340V 1930Hz 50 70 90 110 130 Pressure (mt)

brightness(r) [W/mm^2/sr] Optimize for Peak Brightness 10 9 8 7 6 5 4 3 2 1 0 P= 25.7 Watts/2π 13.5nm 2%BW F= 0.440 FWHM 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 radius 'r' [mm]

Y position [microns] Stability in EUV Plasma Position Image recorded once an hour for over 300 million pulses (~44hours) of continuous operation. Position then extracted from images: Position: σ x = 5.8 μm and σ y = 5.0 μm 20 10 200 0 150 100-10 50 0-200 -100 0 100 200-50 -100 FWHM ~ 400 mm -150-200 X position [microns] -20-20 -10 0 10 20 Brightness remains constant This is open-loop stability: No feedback!

Current performance Based on standard EQ-10 High Reliability Source Utilizes new better cooling bore design Improved modulator Design allows for up to 7kW input power Improved cooling of source and modulator Specifications >20 W @ 13.5nm ±1% Power in 2π ~8 W/mm^2-sr brightness 24/7 Operation

Actinic Mask Inspection and Metrology Requirements Actinic Blank Inspection, AIMs and Patterned Mask Inspection are critical to the success of EUV lithography Major OEMs have programs for development of these tools There is no commercial source on the market to meet the production needs for these tools Brightness ~ 50-100 W/mm 2 -sr is desired for production tools

Laser Enhanced Electrodeless Z-Pinch EUV Source Concept

Use Z-pinch as Pulsed Laser Target. Goal -- increase source brightness while retaining key performance features of the EQ-10 Brightness of ~100W/mm 2 -sr Plasma size ~ 50µm ~ 1-2 W/ 2π Continued excellent plasma and pulse-to-pulse stability (inherited from demonstrated stability of plasma target) Standard LPP starts from a cold Xe or Sn target -- Laser must ablate the cold target, then ionize it, and finally heat the resulting plasma to the 20-30 ev range. Pre-heating pulse increases efficiency Z-pinch target is already a plasma; can be optimized for peak performance

Laser Enhanced Electrodeless Z-Pinch EUV Source Induced High Current Pulse Laser Pulse Elliptical Focus Mirror SPF Magnetic Field Z-Pinched Plasma Inductively Coupled Gas Plasma (Xe) Focused Laser

How to Estimate Performance and Requirements? Scale to existing data Our data for target development. Published data Use code results (with care) to address specific issues. Coupling of laser to target plasma Average charge state vs N i, N e, T e Optical depth at laser wavelength EUV output Primary code used: FLYCHK (NIST) Y. Ralchenko, "Online databases and computational tools for non-lte spectroscopy," Physica Scripta, vol. T134, pp. 014 025+, 2009. [Online]. Available: http://dx.doi.org/10.1088/0031-8949/2009/t134/014025

First, make a dense target Assume pinch compression and compressed plasma energy density are similar to our usual plasma; similar Bennet current. Use FLYCHK to relate N i, N e, T e, Z Ne (cm^-3) 1.6E+19 1.2E+19 8.0E+18 4.0E+18 Electron density vs Fill pressure Energy density scales as T e * (Z+1) * N i ; N i scales as fill pressure. Benchmark to our experimental results T e =25 ev, Z=10, Pressure = ~0.06 Torr, Compressed N e =~ 2.e18 0.0E+00 0.0 0.5 1.0 1.5 2.0 Torr T e ~5 ev, Z=4, Pressure = ~ 0.66 Torr, N e = ~ 1.e19

Dense enough so the laser will couple and reheat the plasma N e, T e given; FLYCHK calculates charge state and radiation parameters; estimates optical depth (number of e-foldings/cm) for laser at 1064 nm. Experimental knob is fill pressure -> N i ; fiddling required to match things up Luckily charge state depends only weakly on N e T e Z N e depth Optical 1/e, mm 5 3.7 1.00E+19 1.67E+01 6.00E-01 10 6.5 2.00E+19 1.85E+01 5.41E-01 25 10.3 4.00E+19 3.24E+01 3.09E-01 As laser pulse starts, cold plasma (5 ev, 1.e19/cm^3) has short e-folding distance good coupling. As plasma heats, absorption remains good.

Intensity relative to 2.e18 Estimate output -- Bound-Bound radiation ~ (N e *N i ) * (other stuff that should be roughly constant) (ratio of fill pressures)^2, after reheating Usual fill pressure 60-90 mt; increase by factor of ~ 10 Expect ~ factor of 100 more intensity; FLYCHK says ~ 200 FLYCHK: Relative Intensity at 92 ev (Te=25 ev) 1000 100 10 1 1.00E+18 1.00E+19 1.00E+20 FLYCHK calculates intensity in units of Watts/(cm^2-Hz-sr); Here scaled to unity at N e =2. e18 At N e =2.e19, ~ 200 Ne

Estimate laser requirements - Laser should provide ~ 100X brightness increase on per-pulse basis. Need factor of 10 over current pinch performance, so reduce pulse rate from 2000 to 200 Hz. Need ~ 1W output in EUV. Typical CE in Xenon ~ 0.5%. Implies 200 W laser. CE may be higher, since plasma is already ionized 200 w, 200 Hz 1 J/pulse. May prefer to optimize at higher rate, lower energy Need Proof of Principle experiment at low pulse rate (~ 10 Hz) to validate concept.

Results in the literature Pulsed CO2 lasers not commonly available commercially

Basic experimental data Proof of principle?

S. Bruckner, S. Wieneke, and W. Viol, "Generation of double pulses in the extreme ultraviolet spectral range using a laser combined pinch plasma source," The Open Plasma Physics Journal, vol. 2, pp. 17-23, 2009. Note emitting plasma size with laser pulse is likely much smaller than the pinch size, implying much increased brightness. Laser approximately doubles EUV output. Fig. (3). Experimentally determined EUV spectra of a xenon z-pinch plasma (black) and a combined laser pulse reheated zpinch plasma (red). In comparison the sole laser pulse does not create any EUV radiation, because the charge carrier density is to low for the ignition of a plasma discharge (green).

Closing Remarks The Energetiq EQ-10 EUV source is a reliable and stable source of EUV photons. Energetiq Sources are being used for infrastructure development globally. Redesign of the source offers higher power and higher brightness operation Brightness of ~8W/mm 2 -sr 20W/ 2π, 24/7 operation Continued excellent plasma and pulse-to-pulse stability Introducing a laser enhancement to the stable z-pinch will increase source brightness while retaining key performance features of the EQ-10 Brightness of ~100W/mm 2 -sr 1W/ 2π Continued excellent plasma and pulse-to-pulse stability 1:20 PM Session 9: Soft X-Ray Sources for Non-Semiconductor Applications -- laboratoryscale water window microscope

Thank You Stephen F. Horne, Matthew M. Besen, Matthew J. Partlow, Donald K. Smith, Paul A. Blackborow, Deborah S. Gustafson