NGTBNLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications. Offering both low onstate voltage and minimal switching loss, the IGBT is well suited for resonant or soft switching applications. Incorporated into the device is a rugged copackaged free wheeling diode with a low forward voltage. Features Low Saturation Voltage using Trench with Field Stop Technology Low Switching Loss Reduces System Power Dissipation Low Gate Charge s ShortCircuit Capability These are PbFree Devices Typical Applications Inverter Welding Machines Microwave Ovens Industrial Switching Motor Control Inverter A, V V CEsat =.7 V E off =. mj G C E ABSOLUTE MAXIMUM RATINGS Rating Symbol Value Unit Collectoremitter voltage V CES V Collector current @ TC = C @ TC = C I C Pulsed collector current, T pulse I CM A limited by T Jmax Diode forward current @ TC = C @ TC = C I F A A G C E TO7 CASE L STYLE MARKING DIAGRAM Diode pulsed current, T pulse limited I FM A by T Jmax Gateemitter voltage V GE V Power Dissipation @ TC = C @ TC = C P D W NL AYWWG ShortCircuit Withstand Time V GE = V, V CE = V, T J C T sc s Operating junction temperature range T J to + C Storage temperature range T stg to + C Lead temperature for soldering, / from case for seconds T SLD C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. A Y WW G ORDERING INFORMATION Device Package Shipping NGTBNLWG = Assembly Location = Year = Work Week = PbFree Package TO7 (PbFree) Units / Rail Semiconductor Components Industries, LLC, June, Rev. Publication Order Number: NGTBNL/D
NGTBNLWG THERMAL CHARACTERISTICS Rating Symbol Value Unit Thermal resistance junctiontocase, for IGBT R JC. C/W Thermal resistance junctiontocase, for Diode R JC. C/W Thermal resistance junctiontoambient R JA C/W ELECTRICAL CHARACTERISTICS (T J = C unless otherwise specified) Parameter Test Conditions Symbol Min Typ Max Unit STATIC CHARACTERISTIC Collectoremitter breakdown voltage, gateemitter shortcircuited V GE = V, I C = A V (BR)CES V Collectoremitter saturation voltage V GE = V, I C = A V GE = V, I C = A, T J = C V CEsat. Gateemitter threshold voltage V GE = V CE, I C = A V GE(th)... V Collectoremitter cutoff current, gate emitter shortcircuited Gate leakage current, collectoremitter shortcircuited V GE = V, V CE = V V GE = V, V CE = V, T J = C I CES.7.... V GE = V, V CE = V I GES na DYNAMIC CHARACTERISTIC Input capacitance C ies, pf Output capacitance V CE = V, V GE = V, f = MHz C oes Reverse transfer capacitance C res Gate charge total Q g nc Gate to emitter charge V CE = V, I C = A, V GE = V Q ge 9 Gate to collector charge Q gc 7 SWITCHING CHARACTERISTIC, INDUCTIVE LOAD Turn-on delay time t d(on) Rise time t r Turn-off delay time T J = C ns V CC = V, I C = A t d(off) Fall time R g = t f V GE = V/ V Turn-on switching loss E on. Turn-off switching loss E off. mj Turn-on delay time t d(on) Rise time t r Turn-off delay time T J = C V CC = V, I C = A t d(off) Fall time R g = t f V GE = V/ V Turn-on switching loss E on. Turn-off switching loss E off. DIODE CHARACTERISTIC Forward voltage V GE = V, I F = A V GE = V, I F = A, T J = C V F..7.7 V ma ns mj V
NGTBNLWG TYPICAL CHARACTERISTICS V GE = to V T J = C V Figure. Output Characteristics 9 V V 7 V V GE = to V T J = C V 9 V V 7 V Figure. Output Characteristics V GE = to V V T J = C 9 V V 7 V T J = C T J = C V GE, GATEEMITTER VOLTAGE (V) Figure. Output Characteristics Figure. Typical Transfer Characteristics...... 7 I C = A I C = A I C = A I C = A, CAPACITANCE (pf), C ies C oes C res T J, JUNCTION TEMPERATURE ( C) Figure. V CE(sat) vs. T J Figure. Typical Capacitance
NGTBNLWG TYPICAL CHARACTERISTICS I F, FORWARD CURRENT (A).. T J = C.. T J = C.. V GE, GATEEMITTER VOLTAGE (V) V CE = V V F, FORWARD VOLTAGE (V) Q G, GATE CHARGE (nc) Figure 7. Diode Forward Characteristics Figure. Typical Gate Charge SWITCHING LOSS (mj) V CE = V V GE = V I C = A Rg = E on E off SWITCHING TIME (ns) V CE = V V GE = V I C = A Rg = t d(off) t f t d(on) t r T J, JUNCTION TEMPERATURE ( C) T J, JUNCTION TEMPERATURE ( C) Figure 9. Switching Loss vs. Temperature Figure. Switching Time vs. Temperature SWITCHING LOSS (mj) V CE = V V GE = V T J = C Rg = E on E off SWITCHING TIME (ns) t d(off) t f t d(on) t r V CE = V V GE = V T J = C Rg = Figure. Switching Loss vs. I C Figure. Switching Time vs. I C
NGTBNLWG TYPICAL CHARACTERISTICS SWITCHING LOSS (mj) V CE = V V GE = V E on I C = A T J = C E off 7 SWITCHING TIME (ns), t d(off) t f t d(on) t r V CE = V V GE = V I C = A T J = C 7 Rg, GATE RESISTOR ( ) Rg, GATE RESISTOR ( ) Figure. Switching Loss vs. Rg Figure. Switching Time vs. Rg 9 SWITCHING LOSS (mj) 7 V GE = V I C = A Rg = T J = C E on E off SWITCHING TIME (ns) V GE = V I C = A Rg = T J = C t d(off) t f t d(on) t r 7 7 7 7 7 77 7 7 7 7 7 77 Figure. Switching Loss vs. V CE Figure. Switching Time vs. V CE.. Single Nonrepetitive Pulse T C = C Curves must be derated linearly with increase in temperature ms dc operation s s Figure 7. Safe Operating Area V GE = V, T C = C Figure. Reverse Bias Safe Operating Area
NGTBNLWG TYPICAL CHARACTERISTICS. R JC =. THERMAL RESPONSE (Z JC).. % Duty Cycle. %. % %.. Single Pulse %. Junction C i = i /R i. C C Duty Factor = t /t Peak T J = P DM x Z JC + T C R R R n. C n Case R i ( C/W)..9..9.79 i (sec).....7.9....9..7.77 PULSE TIME (sec) Figure 9. IGBT Transient Thermal Impedance R(t) ( C/W).. % Duty Cycle % % % % % Junction C i = i /R i R R C C R JC =. R n Case C n R i ( C/W) i (sec).9.e......9.. Single Pulse....... Duty Factor = t /t Peak T J = P DM x Z JC + T C PULSE TIME (sec) Figure. Diode Transient Thermal Impedance Figure. Test Circuit for Switching Characteristics
NGTBNLWG Figure. Definition of Turn On Waveform 7
NGTBNLWG Figure. Definition of Turn Off Waveform
NGTBNLWG PACKAGE DIMENSIONS TO7 CASE L ISSUE F N A K F PL B U L P Y W J G D PL. (.) M Y Q S C T E H Q. (.) M T B M NOTES:. DIMENSIONING AND TOLERANCING PER ANSI Y.M, 9.. CONTROLLING DIMENSION: MILLIMETER. MILLIMETERS INCHES DIM MIN MAX MIN MAX A.... B.7... C.7...9 D.... E.9..7. F.... G. BSC. BSC H..9.9.9 J.... K 9...7. L.... N..9.7. P ---. ---.77 Q.... U. BSC. BSC W.7... STYLE : PIN. GATE. COLLECTOR. EMITTER. COLLECTOR ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC s product/patent coverage may be accessed at www.onsemi.com/site/pdf/patentmarking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box, Denver, Colorado 7 USA Phone: 77 or Toll Free USA/Canada Fax: 77 or 7 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 9 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 79 9 Japan Customer Focus Center Phone: 7 9 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative NGTBNL/D