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Transcription:

DISCRETE SEMICONDUCTORS DATA SHEET, halfpage M3D168 BYG7 series File under Discrete Semiconductors, SC1 1996 Jun 5

BYG7 series FEATURES Glass passivated High maximum operating temperature Low leakage current Excellent stability Guaranteed avalanche energy absorption capability UL 94V-O classified plastic package Shipped in 12 mm embossed tape. DESCRIPTION DO-214AC surface mountable package with glass passivated chip. handbook, 4 columns k cathode band Top view a The well-defined void-free case is of a transfer-moulded thermo-setting plastic. Side view MSA474 Fig.1 Simplified outline (DO-214AC; SOD16) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V RRM V R repetitive peak reverse voltage BYG7D 2 V BYG7G 4 V BYG7J 6 V continuous reverse voltage BYG7D 2 V BYG7G 4 V BYG7J 6 V I F(AV) average forward current averaged over any 2 ms period; T tp = 1 C; see Fig.2 averaged over any 2 ms period; Al 2 O 3 PCB mounting (see Fig.7); T amb = 6 C; see Fig.3 averaged over any 2 ms period; epoxy PCB mounting (see Fig.7); T amb = 6 C; see Fig.3 I FSM non-repetitive peak forward current t = 1 ms half sine wave; T j = T j max prior to surge; V R = V RRMmax E RSM non-repetitive peak reverse avalanche energy L = 12 mh; T j = T j max prior to surge; inductive load switched off 1. A.53 A.39 A 2 A 1 mj T stg storage temperature 65 +175 C T j junction temperature see Fig.4 65 +175 C 1996 Jun 5 2

BYG7 series ELECTRICAL CHARACTERISTICS T j = 25 C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V F forward voltage I F = 1 A; T j = T j max; see Fig.5 2.1 V V (BR)R reverse avalanche breakdown voltage I F = 1 A; see Fig.5 3.6 V I R =.1 ma BYG7D 3 V BYG7G 5 V BYG7J 7 V I R reverse current V R = V RRMmax ; see Fig.6 V R = V RRMmax ; T j = 165 C; see Fig.6 t rr reverse recovery time when switched from I F =.5 A to I R = 1 A; measured at I R =.25 A; see Fig.8 5 µa 1 µa 3 ns C d diode capacitance V R = V; f = 1 MHz 3 pf THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT R th j-tp thermal resistance from junction to tie-point 25 K/W R th j-a thermal resistance from junction to ambient note 1 1 K/W Notes note 2 15 K/W 1. Device mounted on Al 2 O 3 printed-circuit board,.7 mm thick; thickness of copper 35 µm, see Fig.7. 2. Device mounted on epoxy-glass printed-circuit board, 1.5 mm thick; thickness of copper 4 µm, see Fig.7. For more information please refer to the General Part of Handbook SC1. 1996 Jun 5 3

BYG7 series GRAPHICAL DATA 2. MGD485.8 MGD486 I F(AV) I F(AV) 1.5.6 1..4.5.2 1 T tp ( C) 2 V R = V RRMmax ; δ =.5; a = 1.57. 1 2 T amb ( C) V R = V RRMmax ; δ =.5; a = 1.57. Device mounted as shown in Fig.7; solid line: Al 2 O 3 PCB; dotted line: epoxy PCB. Fig.2 Maximum permissible average forward current as a function of tie-point temperature (including losses due to reverse leakage). Fig.3 Maximum permissible average forward current as a function of ambient temperature (including losses due to reverse leakage). 2 T j ( C) 16 MGD487 5 I F 4 MGD488 12 3 8 2 4 D G J 1 4 V R (V) 8 2 4 6 VF (V) 8 Device mounted as shown in Fig.7. Solid line: Al 2 O 3 PCB. Dotted line: epoxy PCB. Solid line: T j = 25 C. Dotted line: T j = 175 C. Fig.4 Maximum permissible junction temperature as a function of reverse voltage. Fig.5 Forward current as a function of forward voltage; maximum values. 1996 Jun 5 4

BYG7 series handbook, 1 halfpage 3 MGC532 5 I R (µa) 1 2 4.5 5 1 2.5 1 1 o T j ( C) 2 1.25 MSB213 V R = V RMMmax. Fig.6 Reverse current as a function of junction temperature; maximum values. Dimensions in mm. Material: AL 2 O 3 or epoxy-glass. Fig.7 Printed-circuit board for surface mounting. handbook, full pagewidth 1 Ω 25 V + DUT I F.5 trr 5 Ω 1 Ω.25 t.5 I R 1 MAM57 Input impedance oscilloscope: 1 MΩ, 22 pf; t r 7 ns. Source impedance: 5 Ω; t r 15 ns. Fig.8 Test circuit and reverse recovery time waveform and definition. 1996 Jun 5 5

BYG7 series PACKAGE OUTLINE handbook, full pagewidth 5.5 5.1 4.5 4.3 2.3 2..5 3.3 2.7.2 MSA414 2.8 2.4 1.6 1.4 Marking band indicates the cathode. Dimensions in mm. Fig.9 DO-214AC; SOD16. DEFINITIONS Data sheet status Objective specification Product specification Limiting values This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1996 Jun 5 6