MOC9 DESCRITION The MOC9 device has a gallium arsenide infrared emitting diode coupled to a silicon darlington phototransistor. ACKAGE DIMENSIONS IN ID. 0.270 (6.86) 0.240 (6.0) 6 FEATURES High current transfer ratio of 300% No base connection for improved noise immunity Underwriters Laboratory (UL) recognized File# E90700 SEATING LANE 0.070 (.78) 0.045 (.4) 0.200 (5.08) 0.5 (2.92) 0.350 (8.89) 0.330 (8.38) 0.54 (3.90) 0.00 (2.54) 0.020 (0.5) MIN ALICATIONS Appliances, measuring instruments I/O interface for computers rogrammable controllers ortable electronics Interfacing and coupling systems of different potentials and impedance Solid state relays ANODE CATHODE 2 N/C 3 6 N/C 5 COLLECTOR 4 EMITTER 0.022 (0.56) 0.06 (0.4) 0.00 (2.54) TY 0.06 (0.40) 0.008 (0.20) 0 to 5 NOTE All dimensions are in inches (millimeters) 0.300 (7.62) TY ABSOLUTE MAXIMUM RATINGS (T A = 25 C Unless otherwise specified.) arameter Symbol Value Units TOTAL DEVICE Storage Temperature T STG -55 to +50 C Operating Temperature T OR -55 to +00 C Lead Solder Temperature T SOL 260 for 0 sec C Total Device ower Dissipation @ T A = 25 C 250 mw 2.94 mw/ C Input-Output Isolation Voltage V ISO 5300 Vac(rms) EMITTER DC/Average Forward Input Current I F 60 ma Reverse Input Voltage V R 3 V LED ower Dissipation @ T A = 25 C 20 mw.4 mw/ C DETECTOR Collector-Emitter Voltage V CEO 30 V Emitter-Collector Voltage V ECO 7 V Detector ower Dissipation @ T A = 25 C 50 mw.76 mw/ C Continuous Collector Current I C 50 ma 200 Fairchild Semiconductor Corporation DS300382 2/6/0 OF 5 www.fairchildsemi.com
MOC9 ELECTRICAL CHARACTERISTICS (T A = 25 C Unless otherwise specified.) INDIVIDUAL COMONENT CHARACTERISTICS arameter Test Conditions Symbol Min Typ** Max Unit EMITTER Input Forward Voltage (I F = 0 ma) V F.5.5 V Input Capacitance (V R = 0, f = MHz) C IN 8 pf Reverse Leakage Current (V R = 3.0 V) I R 0.05 00 µa DETECTOR Collector-Emitter Breakdown Voltage (I C = 00 µa) BV CEO 30 V Emitter-Collector Breakdown Voltage (I E = 0 µa) BV ECO 7 V Collector-Emitter Dark Current (V CE = 0 V) I CEO 00 na TRANSFER CHARACTERISTICS DC Characteristic Test Conditions Symbol Min Typ** Max Units Current Transfer Ratio, (I F = 0 ma, V CE = 2 V) CTR 30 (300) 45 (450) ma (%) TRANSFER CHARACTERISTICS Characteristic Test Conditions Symbol Min Typ** Max Units SWITCHING TIMES Turn-on Time (V CE = 0 V, R L = 00, I F = 5 ma) t on 3.5 µs Turn-off Time t off 95 µs ISOLATION CHARACTERISTICS Characteristic Test Conditions Symbol Min Typ** Max Units Input-Output Isolation Voltage (I I-O µa, min.) 7500 Vac(pk) V (I ISO I-O µa, min.) 5300 Vac(rms) Isolation Resistance (V I-O = 500 VDC) R ISO 0 Isolation Capacitance (V = 0 V, f = MHz) C ISO 0.2 pf Collector - Emitter Saturation Voltage (I C = 0 ma, I F = 0 ma) V CE (SAT) V Note ** Typical values at T A = 25 C www.fairchildsemi.com 2 OF 5 2/6/0 DS300382
IC - COLLECTOR CURRENT (NORMALIZED) CTR - CURRENT TRANSFER RATIO (NORMALIZED) CTR - CURRENT TRANSFER RATIO (NORMALIZED) HOTODARLINGTON OTOCOULERS MOC9 0 T A = 0 C, 25 C T A = 70 C T A = 00 C T A = -55 C CTR @ I F = 0 ma V CE = 5 V 0. 0. 0 00 I F - LED INUT CURRENT (ma) Fig. Output Current vs. Input Current CTR @ I F = 0 ma V CE = 0 V 0. -80-60 -40-20 0 20 40 60 80 00 20 T A - AMBIENT TEMERATURE ( C) Fig. 2 Current Transfer Ratio vs. Ambient Temperature 6 4 2 0 8 6 4 2 0 I F = ma V CE = 5 V I F = 0 ma I F = 5 ma I F = 2 ma I F = ma 0 2 3 4 5 6 7 8 9 0 V CE - COLLECTOR -EMITTER VOLTAGE (V) Fig. 3 Collector Current vs. Collector-Emitter Voltage ICEO - COLLECTOR-EMITTER DARK CURRENT (na) 0000 000 00 0 0. V CE = 0 V 0.0 0 20 40 60 80 00 T A - AMBIENT TEMERATURE ( C) Fig. 4 Dark Current vs. Ambient Temperature 000 000 R L = k TON - TIME (µs) 00 0 R L = 00 R L = 0 VCC = 0 V TOFF - TIME (µs) 00 0 R L = k R L = 00 R L = 0 0. 0. 0 00 I F - LED INUT CURRENT (ma) Fig. 5 Turn-On Time vs. Input Current VCC = 0 V 0. 0 00 I F - LED INUT CURRENT (ma) Fig. 6 Turn-Off Time vs. Input Current DS300382 2/6/0 3 OF 5 www.fairchildsemi.com
MOC9 ORDERING INFORMATION Order Option Entry Description Identifier S.S Surface Mount Lead Bend SD.SD Surface Mount; Tape and reel W.W 0.4 Lead Spacing 300.300 VDE 0884 300W.300W VDE 0884, 0.4 Lead Spacing 3S.3S VDE 0884, Surface Mount 3SD.3SD VDE 0884, Surface Mount, Tape & Reel QT Carrier Tape Specifications ( D Taping Orientation) 4.85 ± 0.20 0.30 ± 0.05 4.0 ± 0. 2.0 ± 0. 4.0 ± 0. Ø.55 ± 0.05.75 ± 0.0 3.2 ± 0.2 9.55 ± 0.20 7.5 ± 0. 6.0 ± 0.3 0. MAX 0.30 ± 0.20 Ø.6 ± 0. User Direction of Feed www.fairchildsemi.com 4 OF 5 2/6/0 DS300382
DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY RODUCTS HEREIN TO IMROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE ALICATION OR USE OF ANY RODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS ATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUORT OLICY FAIRCHILD S RODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMONENTS IN LIFE SUORT DEVICES OR SYSTEMS WITHOUT THE EXRESS WRITTEN AROVAL OF THE RESIDENT OF FAIRCHILD SEMICONDUCTOR CORORATION. As used herein:. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body,or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. DS300382 2/6/0 5 OF 5 www.fairchildsemi.com