Silicon P-Channel MOS FET November 1996 Application High speed power switching Features Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for switching regulator, DC-DC converter Avalanche ratings Outline LDPAK 4 4 D 1 3 1 3 G S 1. Gate. Drain 3. Source 4. Drain
Absolute Maximum Ratings (Ta = 5 C) Item Symbol Ratings Unit Drain to source voltage V DSS 6 V Gate to source voltage V GSS ± V Drain current I D 3 A Drain peak current I D(pulse) * 1 1 A Body to drain diode reverse drain current I DR 3 A Avalanche current I AP * 3 3 A Avalanche energy E AR * 3 77 mj Channel dissipation Pch* 75 W Channel temperature Tch 15 C Storage temperature Tstg 55 to +15 C Notes 1. PW 1 µs, duty cycle 1%. Value at T C = 5 C 3. Value at Tch = 5 C, Rg 5 Ω
Electrical Characteristics (Ta = 5 C) Item Symbol Min Typ Max Unit Test conditions Drain to source breakdown V (BR)DSS 6 V I D = 1 ma, V GS = voltage Gate to source breakdown voltage V (BR)GSS ± V I G = ± µa, V DS = Gate to source leak current I GSS ±1 µa V GS = ±16 V, V DS = Zero gate voltage drain current I DSS 5 µa V DS = 5 V, V GS = Gate to source cutoff voltage V GS(off) 1..5 V I D = 1 ma, V DS = 1 V Static drain to source on state resistance R DS(on).33.43 Ω I D = 15 A, V GS = 1 V* 1.45.6 Ω I D = 15 A, V GS = 4 V* 1 Forward transfer admittance y fs 17 5 S I D = 15 A, V DS = 1 V* 1 Input capacitance Ciss 33 pf V DS = 1 V, V GS =, f = 1 MHz Output capacitance Coss 15 pf Reverse transfer capacitance Crss 48 pf Turn-on delay time t d(on) 3 ns I D = 15 A, V GS = 1 V, R L = Ω Rise time t r 17 ns Turn-off delay time t d(off) 5 ns Fall time t f 39 ns Body to drain diode forward voltage Body to drain diode reverse recovery time Note 1. Pulse test V DF 1.5 V I F = 3 A, V GS = t rr ns I F = 3 A, V GS =, di F /dt = 5 A/µs 3
75 Power vs. Temperature Derating Channel Dissipation Pch (W) 5 5 5 1 15 Case Temperature Tc ( C) Drain Current I D (A) 5 3 1 3 1 Maximum Safe Operation Area Operation in this area is limited by R DS(on) 1 µ s 1 µ s 1 ms PW = 1 ms DC Operation (Tc = 5 C) 3 Ta = 5 C 1.5.1.3 1 3 1 3 1 Drain to Source Voltage V DS (V) Drain Current I (A) D 5 4 3 1 Typical Output Characteristics 1 V 6 V 4 V 3.5 V 3 V.5 V V GS = V 4 6 8 1 Drain to Source Voltage V DS (V) Drain Current I (A) D 5 4 3 1 Typical Transfer Characteristics Tc = 5 C 5 C 75 C Pulse Test V GS = 1 V 1 3 4 5 Gate to Source Voltage V GS (V) 4
Drain to Source Saturation Voltage V DS (on) (V). 1.6 1..8.4 Drain-Source Saturation Voltage vs. Gate-Source Voltage Pulse Test I D = 3 A A 1 A 4 6 8 1 Gate to Source Voltage V GS (V) Static Drain-Source on State Resistance R DS(on) ( Ω ).5..1.5..1 Static Drain-Source on State Resistance vs. Drain Current V GS= 4 V 1 V.5 5 1 5 1 Drain Current I D (A).1 Static Drain-Source on State Resistance vs. Temperature Static Drain-Source on State Resistance R DS(on) ( Ω ).8.6.4. Pulse test V GS= 4 V 1 V I = 3 A D 1 A, A I D = 3 A 1 A, A 4 4 8 1 16 Case Temperature T C ( C) 5
1 Forward Transfer Admittance y fs (s) 5 1 5 Forward Transfer Admittance vs. Drain Current Pulse Test V DS= 1 V Tc = 5 C 5 C 75 C 1.5 1 5 1 5 Drain Current I D (A) 5 Body-Drain Diode Reverse Recovery Time Reverse Recovery Time t rr (ns) 1 5 1 di/dt = 5 A/ µ s, V GS = Ta = 5 C 5 1 5 1 5 1 Reverse Drain Current I DR (A) 1 Typical Capacitance vs. Drain-Source Voltage Ciss Capacitance C (pf) 1 1 V GS=, f = 1 MHz Coss Crss 1 1 3 4 5 Drain to Source Voltage V (V) DS 6
Drain to Source Voltage V DS (V) 4 6 8 Dynamic Input Characteristics V DD= 1 V 5 V 5 V VDS V DD= 1 V 5 V 5 V I D = 3 A V GS 1 4 8 1 16 Gate Charge Qg (nc) 4 8 1 16 Gate to Source Voltage V GS (V) 1 Switching Characteristics t d(off) Switching Time t (ns) 5 1 5 t f t r t d(on) V GS = 1 V, V DD 3 V PW = µ s, duty < = 1% 1.5 1 5 1 5 Drain Current I D (A) =: 5 Reverse Drain Current vs. Source to Drain Voltage Reverse Drain Current I DR (A) 4 3 1 Pulse Test V GS= 1 V 5 V, 5V.4.8 1. 1.6. Source to Drain Voltage V (V) SD Repetive Avaranche Energy E AR (mj) 1 8 6 4 Maxmum Avalanche Energy vs. Channel Temperature Derating I AP = 3 A V DD = 5 V duty <.1% Rg > = 5 Ω 5 5 75 1 15 15 Channel Temperature Tch ( C) 7
Avalanche Test Circuit and Waveform V DS Monitor Rg Vin 15 V 5Ω L IAP Monitor D.U.T V DD V DD E = AR I AP 1 L I AP I D V DSS V DSS VDD VDS V (BR)DSS Normalized Transient Thermal Impedance γ S (t) 3 1..3.1.3.1 1 µ D = 1.5..1.5..1 1 Shot Pulse Normalized Transient Thermal Impedance vs. Pulse Width T PW T C = 5 C θch c (t) = γ S (t) θch c θch c = 1.67 C/W, T C = 5 C 1 µ 1 m 1 m 1 m 1 1 Pulse Width PW (s) P DM D = PW T Switching Time Test Circuit Vin Monitor D.U.T Vout Monitor Vin 1 V 5 Ω R L V. DD =. 3 V Vin 1% Waveforms 9% 9% 9% Vout 1% t d (on) t r t d (off) 1% t f 8
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