Rev. 4 24 September 28 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits Low conduction losses due to low on-state resistance Q11 compliant Suitable for standard level gate drive sources Suitable for thermally demanding environments due to 175 C rating 1.3 Applications 12 V loads Automotive systems General purpose power switching Motors, lamps and solenoids 1.4 Quick reference data Table 1. Quick reference Symbol Parameter Conditions Min Typ Max Unit V DS drain-source voltage T j 25 C; T j 175 C - - 4 V I D drain current V GS =1V; T mb =25 C; [1] - - 75 A see Figure 1; see Figure 3; P tot total power dissipation T mb = 25 C; see Figure 2 - - 157 W Avalanche ruggedness E DS(AL)S non-repetitive drain-source avalanche energy I D =75A; V sup 4 V; R GS =5Ω; V GS =1V; T j(init) = 25 C; unclamped - - 241 mj Dynamic characteristics Q GD gate-drain charge V GS =1V; I D =25A; V DS =32V; T j =25 C; see Figure 14-12 - nc Static characteristics R DSon drain-source on-state resistance [1] Continuous current is limited by package. V GS =1V; I D =25A; T j = 25 C; see Figure 12; see Figure 11-6.6 8 mω
2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate 2 D drain [1] 3 S source mb D mounting base; connected to drain 3. Ordering information [1] It is not possible to make a connection to pin 2. mb 2 1 3 SOT44 (D2PAK) G mbb76 D S Table 3. Ordering information Type number Package Name Description Version D2PAK Plastic single-ended surface-mounted package (D2PAK); 3 leads (one lead cropped) SOT44 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 6134). Symbol Parameter Conditions Min Max Unit V DS drain-source voltage T j 25 C; T j 175 C - 4 V V DGR drain-gate voltage R GS =2kΩ - 4 V V GS gate-source voltage -2 2 V I D drain current T mb =25 C; V GS =1V; see Figure 1; see Figure [1] - 11 A 3; T mb =1 C; V GS = 1 V; see Figure 1; [1] - 71 A T mb =25 C; V GS =1V; see Figure 1; see Figure [2] - 75 A 3; I DM peak drain current T mb =25 C; t p 1 µs; pulsed; see Figure 3-47 A P tot total power dissipation T mb =25 C; see Figure 2-157 W T stg storage temperature -55 175 C T j junction temperature -55 175 C Source-drain diode I S source current T mb =25 C; [1] - 11 A T mb =25 C; [2] - 75 A I SM peak source current t p 1 µs; pulsed; T mb =25 C - 47 A _4 Product data sheet Rev. 4 24 September 28 2 of 12
Table 4. Limiting values continued In accordance with the Absolute Maximum Rating System (IEC 6134). Symbol Parameter Conditions Min Max Unit Avalanche ruggedness E DS(AL)S non-repetitive drain-source avalanche energy I D =75A; V sup 4 V; R GS =5Ω; V GS =1V; T j(init) = 25 C; unclamped - 241 mj [1] Current is limited by power dissipation chip rating. [2] Continuous current is limited by package. 12 3aac81 12 3aac7 I D (A) P der (%) 8 8 (1) 4 4 5 1 15 2 T mb ( C) 5 1 15 2 T mb ( C) Fig 1. Continuous drain current as a function of mounting base temperature Fig 2. Normalized total power dissipation as a function of solder point temperature 1 3 3aac79 I D (A) 1 2 1 Limit R DSon = V DS / I D (1) t p = 1 μs 1 μs 1 ms 1 ms 1 ms DC 1 1 1 1 1 1 2 V DS (V) Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-s _4 Product data sheet Rev. 4 24 September 28 3 of 12
5. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit R th(j-a) thermal resistance from mounted on a printed-circuit board; - 5 - K/W junction to ambient minimum footprint R th(j-mb) thermal resistance from junction to mounting base see Figure 4 - -.95 K/W 1 3aac8 Z th(j mb) (K/W) 1 1 δ =.5.2.1.5.2 1 2 single pulse P t p δ = T t p t T 1 3 1 6 1 5 1 4 1 3 1 2 1 1 1 t p (s) Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration _4 Product data sheet Rev. 4 24 September 28 4 of 12
6. Characteristics Table 6. Characteristics Symbol Parameter Conditions Min Typ Max Unit Static characteristics V (BR)DSS drain-source I D =.25mA; V GS =V; T j =25 C 4 - - V breakdown voltage I D =.25mA; V GS =V; T j =-55 C 36 - - V V GS(th) gate-source threshold I D =1mA; V DS = V GS ; T j =25 C; see 2 3 4 V voltage Figure 9; see Figure 1 I D =1mA; V DS = V GS ; T j =-55 C; see - - 4.4 V Figure 9; see Figure 1 I D =1mA; V DS = V GS ; T j = 175 C; see 1 - - V Figure 9; see Figure 1 I DSS drain leakage current V DS =4V; V GS =V; T j = 25 C -.2 1 µa V DS =4V; V GS =V; T j = 175 C - - 5 µa I GSS gate leakage current V DS =V; V GS =2V; T j = 25 C - 2 1 na V DS =V; V GS =-2V; T j = 25 C - 2 1 na R DSon drain-source on-state V GS =1V; I D =25A; T j = 175 C; see - - 15.2 mω resistance Figure 11; see Figure 12 V GS =1V; I D =25A; T j =25 C; see Figure 12; see Figure 11-6.6 8 mω Dynamic characteristics Q G(tot) total gate charge I D =25A; V DS =32V; V GS =1V; - 36 - nc Q GS gate-source charge T j =25 C; see Figure 14-9 - nc Q GD gate-drain charge - 12 - nc C iss input capacitance V GS =V; V DS =25V; f=1mhz; - 217 2689 pf C oss output capacitance T j =25 C; see Figure 15-486 583 pf C rss reverse transfer - 213 291 pf capacitance t d(on) turn-on delay time V DS =3V; R L =1.2Ω; V GS =1V; - 2 - ns t r rise time R G(ext) =1Ω; T j =25 C - 51 - ns t d(off) turn-off delay time - 2 - ns t f fall time - 33 - ns L D internal drain inductance L S internal source inductance Source-drain diode from drain lead 6 mm from package to center of die; T j =25 C from upper edge of drain mounting base to centre of die; T j =25 C from source lead 6 mm from package to source bond pad; T j =25 C - 4.5 - nh - 2.5 - nh - 7.5 - nh V SD source-drain voltage I S =25A; V GS =V; T j = 25 C; see -.85 1.2 V Figure 13 t rr reverse recovery time I S =2A; di S /dt = -1 A/µs; V GS =-1V; - 53 - ns Q r recovered charge V DS =2V; T j =25 C - 44 - nc _4 Product data sheet Rev. 4 24 September 28 5 of 12
3 I D (A) 2 14 12 V GS (V) = 1 9.5 9. 3aac76 g fs (S) 6 3aac73 2 8.5 4 8. 7.5 1 7. 6.5 6. 5.5 5. 4.5 2 4 6 8 1 V DS (V) 2 2 4 6 I D (A) Fig 5. Output characteristics: drain current as a function of drain-source voltage; typical values Fig 6. Forward transconductance as a function of drain current; typical values 16 3aac77 1 3aac74 R DSon (mω) 12 6. 6.5 7. 8. V GS (V) = 1 I D (A) 75 5 8 2 25 T j = 175 C 25 C 4 1 2 3 I D (A) 2 4 6 8 V GS (V) Fig 7. Drain-source on-state resistance as a function of drain current; typical values Fig 8. Transfer characteristics: drain current as a function of gate-source voltage; typical values _4 Product data sheet Rev. 4 24 September 28 6 of 12
5 3aab852 1 1 3aab853 V GS(th) (V) 4 max I D (A) 1 2 min typ max 3 typ 1 3 2 min 1 4 1 1 5 6 6 12 16 T j ( C) 1 6 2 4 6 V GS (V) Fig 9. Gate-source threshold voltage as a function of junction temperature Fig 1. Sub-threshold drain current as a function of gate-source voltage 14 3aac75 2 3aab851 R DSon (mω) a 12 1.5 1 1 8 6.5 4 5 1 15 2 V GS (V) 6 6 12 18 T j ( C) Fig 11. Drain-source on-state resistance as a function of gate-source voltage; typical values Fig 12. Normalized drain-source on-state resistance factor as a function of junction temperature _4 Product data sheet Rev. 4 24 September 28 7 of 12
1 3aac71 1 3aac72 I S (A) 75 V GS (V) 8 V DD = 14 V 6 V DD = 32 V 5 4 25 T j = 175 C 25 C 2..3.6.9 1.2 V SD (V) 1 2 3 4 Q G (nc) Fig 13. Reverse diode current as a function of reverse diode voltage; typical values Fig 14. Gate-source voltage as a function of turn-on gate charge; typical values 3 3aac78 C (pf) C iss 2 C oss 1 C rss 1 2 1 1 1 1 1 2 V DS (V) Fig 15. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values _4 Product data sheet Rev. 4 24 September 28 8 of 12
7. Package outline Plastic single-ended surface-mounted package (D2PAK); 3 leads (one lead cropped) SOT44 A E A 1 D 1 mounting base D H D 2 1 3 L p b c e e Q 2.5 5 mm scale DIMENSIONS (mm are the original dimensions) UNIT mm A 4.5 4.1 D A 1 b c D max. 1 1.4 1.27.85.6.64.46 11 1.6 1.2 E e L p H D Q 1.3 9.7 2.54 2.9 2.1 15.8 14.8 2.6 2.2 OUTLINE VERSION REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE SOT44 5-2-11 6-3-16 Fig 16. Package outline SOT44 (D2PAK) _4 Product data sheet Rev. 4 24 September 28 9 of 12
8. Revision history Table 7. Revision history Document ID Release date Data sheet status Change notice Supersedes _4 28924 Product data sheet - BUK75_768-4B_3 Modifications: Type number separated from data sheet BUK75_768-4B_3 BUK75_768-4B_3 271128 Product data sheet - BUK75_768-4B_2 BUK75_768-4B_2 271116 Product data sheet - BUK75_768_4B-1 BUK75_768_4B-1 23319 Product data sheet - - _4 Product data sheet Rev. 4 24 September 28 1 of 12
9. Legal information 9.1 Data sheet status Document status [1][2] Product status [3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term 'short data sheet' is explained in section "Definitions". [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nexperia.com. 9.2 Definitions Draft The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. Nexperia does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local Nexperia sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 9.3 Disclaimers General Information in this document is believed to be accurate and reliable. However, Nexperia does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes Nexperia reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use Nexperia products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of a Nexperia product can reasonably be expected to result in personal injury, death or severe property or environmental damage. Nexperia accepts no liability for inclusion and/or use of Nexperia products in such equipment or applications and therefore such inclusion and/or use is at the customer s own risk. Applications Applications that are described herein for any of these products are for illustrative purposes only. Nexperia makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Quick reference data The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Limiting values Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 6134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale Nexperia products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nexperia.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by Nexperia. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. 9.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 1. Contact information For more information, please visit: http://www.nexperia.com For sales office addresses, please send an email to: salesaddresses@nexperia.com _4 Product data sheet Rev. 4 24 September 28 11 of 12
11. Contents 1 Product profile...........................1 1.1 General description......................1 1.2 Features and benefits.....................1 1.3 Applications............................1 1.4 Quick reference data.....................1 2 Pinning information.......................2 3 Ordering information......................2 4 Limiting values...........................2 5 Thermal characteristics...................4 6 Characteristics...........................5 7 Package outline..........................9 8 Revision history.........................1 9 Legal information........................ 11 9.1 Data sheet status....................... 11 9.2 Definitions............................. 11 9.3 Disclaimers............................ 11 9.4 Trademarks............................ 11 1 Contact information...................... 11 For more information, please visit: http://www.nexperia.com For sales office addresses, please send an email to: salesaddresses@nexperia.com Date of release: 24 September 28