Ferroelectric HfO 2 Thin Films

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Ferroelectric HfO 2 Thin Films May 12 th, 2015 JACKSON ANDERSON ELECTRICAL AND MICROELECTRONIC ENGINEERING ROCHESTER INSTITUTE OF TECHNOLOGY

Outline Introduction Background Project Objectives Experimental Results Deposition of Doped HfO 2 Thin Films CV Measurements Hysteresis Measurements Conclusions and Future Research 2/5/2016 JACKSON ANDERSON - FERROELECTRIC HFO2 THIN FILMS 2

Outline Introduction Experimental Results Conclusions and Future Research 2/5/2016 JACKSON ANDERSON - FERROELECTRIC HFO2 THIN FILMS 3

What is Ferroelectricity? 2/5/2016 JACKSON ANDERSON - FERROELECTRIC HFO2 THIN FILMS 4

Measurements of Ferroelectricity Remnant Polarization: Polarization in ferroelectric material when no bias applied V c- P r+ V c+ Coercive Voltage/Field: Voltage/E-field when no polarization is present P r- 2/5/2016 JACKSON ANDERSON - FERROELECTRIC HFO2 THIN FILMS 5

Benefits of Ferroelectric Memory (FeFET) Sub-100ns read/write times (Yurchuk, 2014) Smaller footprint than DRAM 1T vs 1T1C Potential for use in non-volatile applications Memory window of over 1V shown after 10 days (HfO 2 ) (Yurchuk, 2014) 10 year memory window projected for HfO 2 and traditional materials (ITRS, 2013) Lower write voltages than floating gate or charge-trap memories 4-6 V vs 10-15 V required for floating gate (Yurchuk, 2014) Non-charge based Arimoto, 2004 2/5/2016 JACKSON ANDERSON - FERROELECTRIC HFO2 THIN FILMS 6

Challenges with Traditional Ferroelectric Materials Lead zirconate titanate (PZT) and strontium bismuth tantalate (SBT) most common ferroelectric films These films likely not scalable beyond 22 nm node Low coercive field requires thick ferroelectric layer to obtain useful memory window Thick buffer layer required between ferroelectric gate and channel to limit inter-diffusion Depolarization field caused by buffer layer decreases retention time ITRS, 2013 2/5/2016 JACKSON ANDERSON - FERROELECTRIC HFO2 THIN FILMS 7

Why HfO 2? Higher coercive field allows for thin ferroelectric layer, enabling continued scaling of FeFETs Doesn t require thick buffer layer decreases depolarization field, increasing theoretical retention time Familiar material can leverage high-k metal gate (HKMG) process knowledge Yurchuk et al, 2014. 2/5/2016 JACKSON ANDERSON - FERROELECTRIC HFO2 THIN FILMS 8

Ferroelectricity Reported in a Variety of HfO 2 Films Ferroelectric HfO 2 first reported in 2011 (Si, 4% mol, ALD) (Boesck, 2011) Observed with other dopants such as and Y (Schroeder, 2013) Ferroelectric behavior also seen in sputtered Y-doped HfO 2 (Schroeder, 2013) Year Dopant mol % P r (μc/cm 2 ) E c (MV/cm) 2011 Si 3.8 10 1 2013 5-7 16 1.3 2013 Y (ALD) 2.5-5.5 24 1.2 2013 Y (sputtered) 2.5-5.5 10 1.5 2013 Si 3.5-4.5 14-24 1 2/5/2016 JACKSON ANDERSON - FERROELECTRIC HFO2 THIN FILMS 9

Project Objectives 1. Develop a process for fabrication of ferroelectric HfO 2 devices using tools available in the RIT Semiconductor and Microsystems Fabrication Laboratory (SMFL) Sputtered HfO 2 film (no Atomic Layer Deposition) 2. Enable in-house characterization of ferroelectric films through the installation and qualification of a newly purchased ferroelectric test system 2/5/2016 JACKSON ANDERSON - FERROELECTRIC HFO2 THIN FILMS 10

Outline Introduction Experimental Results Conclusions and Future Research 2/5/2016 JACKSON ANDERSON - FERROELECTRIC HFO2 THIN FILMS 11

Previous RIT Work M. Witulski, Senior Design 2014. 2/5/2016 JACKSON ANDERSON - FERROELECTRIC HFO2 THIN FILMS 12

CV Window Changes with Sweep Speed Window in CV likely caused by charges rather than ferroelectricity 2/5/2016 JACKSON ANDERSON - FERROELECTRIC HFO2 THIN FILMS 13

HfO 2 / Sandwich Approach for More Uniform Doping HfO 2 / deposited via alternating sputter without breaking vacuum Some devices exhibited mechanical failure of film stack after anneal Additional layers added stress to the system Additional interfaces provided more points for failure 600 nm 10 nm 15 nm 2/5/2016 JACKSON ANDERSON - FERROELECTRIC HFO2 THIN FILMS 14

Solid Source Doping Revisited 10 nm TiN Reactive Sputter (D1,D2) 15 nm HfO 2 Reactive Sputter (all wafers) 5 nm uminum Layer Evaporation (D1, D4) Sputtering (D2, D3) Sputter & Lift-off Top 10 nm TiN (half of each wafer) Anneal RTA or Furnace Evaporate & Lift-off Top (600 nm) Evaporate Back (600 nm) TiN HfO 2 Si p-type (100) TiN HfO 2 TiN Si p-type (100) HfO 2 Si p-type (100) HfO 2 TiN Si p-type (100) 2/5/2016 JACKSON ANDERSON - FERROELECTRIC HFO2 THIN FILMS 15

Experimental Matrix Developed Away Developed Away 2/5/2016 JACKSON ANDERSON - FERROELECTRIC HFO2 THIN FILMS 16

Promising Results Seen in Samples with TiN Cap Furnace - 1hr 600 C RTA - 20s 850 C 2/5/2016 JACKSON ANDERSON - FERROELECTRIC HFO2 THIN FILMS 17

New Ferroelectric Test System Installed Advanced Customized Characterization Technologies TF Analyzer 1000 (TF 1000) allows for: Hysteresis measurement PUND testing Leakage current measurement Fatigue measurement 2/5/2016 JACKSON ANDERSON - FERROELECTRIC HFO2 THIN FILMS 18

Discrete Component Measurement Evans, 2008 2/5/2016 JACKSON ANDERSON - FERROELECTRIC HFO2 THIN FILMS 19

NaMLab Ferroelectric and Antiferroelectric HfO 2 30 8 GE AFE Sample 200Hz 3V 25 9 GE FE Sample 100Hz 3V 20 20 15 2 10 2 10 5 Polarization uc/cm 0-10 Polarization uc/cm 0-5 -10-20 -15-20 -30-3 -2-1 0 1 2 3-25 -3-2 -1 0 1 2 3 Voltage (V) Voltage (V) 2/5/2016 JACKSON ANDERSON - FERROELECTRIC HFO2 THIN FILMS 20

Conclusions and Future Research Conclusions: A top TiN layer along with a low-temperature anneal are key in coercing sputtered :HfO 2 into a ferroelectric phase RIT is prepared to characterize fabricated ferroelectric devices aixacct TF Analyzer 1000 proven on both discrete PZT and ferroelectric HfO 2 samples Doped HfO 2 is a strong contender for enabling scalable FeFETs Comparable memory window to PZT can be achieved with a film 10x thinner Future Areas of Research: Materials analysis to investigate effects of solid-source diffusion and anneal method on ferroelectric phase formation in HfO 2 Fabrication of MIM capacitors to allow easy hysteresis measurement Modeling of the impact of depletion capacitance on the hysteresis measurement to allow characterization of MIS capacitors Fabrication and testing of FeFETs using a modified RIT CMOS process 2/5/2016 JACKSON ANDERSON - FERROELECTRIC HFO2 THIN FILMS 21

Acknowledgements Karine Florent and Dr. Santosh Kurinec Dr. Dale Ewbank and Dr. Robert Pearson Dr. Uwe Schroeder, NaMLab Dr. Lutz Wilde, Fraunhofer Institute for Photonic Microsystems (IPMS) Dr. Stephan Tiedke, President aixacct Systems GmbH Matt Filmer, Dr. Michael Jackson, and Dr. Karl Hirschman The entire SMFL Staff This work was supported in part by the National Science Foundation, Grant # ECCS-1541090 Any opinions, findings, and conclusions or recommendations expressed in this material are those of the author(s) and do not necessarily reflect the views of the National Science Foundation. 2/5/2016 JACKSON ANDERSON - FERROELECTRIC HFO2 THIN FILMS 22

References [1] E. Yurchuk, et al., "Impact of Scaling on the Performance of HfO2-Based Ferroelectric Field Effect Transistors,"Ieee Transactions on Electron Devices, vol. 61, pp. 3699-3706, Nov 2014. [2] ITRS Emerging Research Devices, pp. 12, 2013 http://www.itrs.net/links/2013itrs/2013chapters/2013erd.pdf [3] Y. Arimoto and H. Ishiwara, "Current status of ferroelectric randomaccess memory," Mrs Bulletin, vol. 29, pp. 823-828, Nov 2004. [4] T. S. Boescke, J. Muller, D. Brauhaus, U. Schroder, and U. Bottger, "Ferroelectricity in hafnium oxide thin films," Applied Physics Letters, vol. 99, p. 3, Sep 2011. [5] U. Schroeder, S. Mueller, J. Mueller, E. Yurchuk, D. Martin, C. Adelmann, et al., "Hafnium Oxide Based CMOS Compatible Ferroelectric Materials," Ecs Journal of Solid State Science and Technology, vol. 2, pp. N69-N72, 2013. [6] Evans, Joe T. Typical Performance of Packaged AB Capacitors, Radiant Technologies, Inc. 2008. 2/5/2016 JACKSON ANDERSON - FERROELECTRIC HFO2 THIN FILMS 23

Thank You. 2/5/2016 JACKSON ANDERSON - FERROELECTRIC HFO2 THIN FILMS 24

Backup 2/5/2016 JACKSON ANDERSON - FERROELECTRIC HFO2 THIN FILMS 25

Dynamic Hysteresis Measurement (DHM) 2/5/2016 JACKSON ANDERSON - FERROELECTRIC HFO2 THIN FILMS 26

Discrete Ferroelectric Capacitor Structure 250 nm PZT for protection 100 nm Pt Electrode 150 nm Pt Electrode 255 nm PZT Ferroelectric Film 500nm SiO 2 as a foundation 550 µm Si Wafer Evans, 2008 2/5/2016 JACKSON ANDERSON - FERROELECTRIC HFO2 THIN FILMS 27

Doped Capacitors After Anneal 850 C 20s 1000 C 20s 2/5/2016 JACKSON ANDERSON - FERROELECTRIC HFO2 THIN FILMS 28

Undoped Shadow Mask Reference Capacitors P-type 111 wafers Anneal Wafer 1: 1000 C Wafer 2: 870 C (850 target) Wafer 3: 740 C (700 target) 2/5/2016 JACKSON ANDERSON - FERROELECTRIC HFO2 THIN FILMS 29

Reference Capacitors (Fabricated without Doping) 2/5/2016 JACKSON ANDERSON - FERROELECTRIC HFO2 THIN FILMS 30

Solid Source Doping Revisited 10 nm TiN Reactive Sputter (D1,D2) 15 nm HfO 2 Reactive Sputter (all wafers) 5 nm uminum Layer Evaporation (D1, D4) Sputtering (D2, D3) Sputter & Lift-off Top 10 nm TiN (half of each wafer) Anneal RTA or Furnace Evaporate & Lift-off Top (600 nm) Evaporate Back (600 nm) TiN HfO 2 Si p-type (100) TiN HfO 2 TiN Si p-type (100) HfO 2 Si p-type (100) HfO 2 TiN Si p-type (100) 2/5/2016 JACKSON ANDERSON - FERROELECTRIC HFO2 THIN FILMS 31

CV Results 2/5/2016 JACKSON ANDERSON - FERROELECTRIC HFO2 THIN FILMS 32

Top TiN Only Furnace - 1hr 600 C RTA - 1s 1000 C RTA - 20s 850 C 2/5/2016 JACKSON ANDERSON - FERROELECTRIC HFO2 THIN FILMS 33

Top and Bottom TiN Furnace - 1hr 600 C RTA - 1s 1000 C RTA - 20s 850 C 2/5/2016 JACKSON ANDERSON - FERROELECTRIC HFO2 THIN FILMS 34

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