Rev. 6 January 2 Product specification. Description SiliconMX products use the latest Philips TrenchMOS 2 technology to achieve the lowest possible on-state resistance in a SOT96- (SO8) package. Product availability: in SOT96- (SO8). 2. Features Very low on-state resistance Fast switching TrenchMOS technology. 3. pplications c DC to DC convertor Computer motherboards Switch mode power supplies. c 4. Pinning information Table : Pinning - SOT96-, simplified outline and symbol Pin Description Simplified outline Symbol,2,3 source (s) 4 gate (g),6,7,8 drain (d) 8 d g 4 Top view MBK87 MBB76 s SOT96- (SO8). SiliconMX is a trademark of Royal Philips Electronics. 2. TrenchMOS is a trademark of Royal Philips Electronics.
. Quick reference data Table 2: Quick reference data Symbol Parameter Conditions Typ Max Unit V DS drain-source voltage (DC) T j =2to C 2 V I D drain current (DC) T sp =8 C 2.9 P tot total power dissipation T sp =8 C 3. W T j junction temperature C R DSon drain-source on-state resistance V GS = V; I D = 2. ; T j =2 C 3 6 mω 6. Limiting values Table 3: Limiting values In accordance with the bsolute Maximum Rating System (IEC 634). Symbol Parameter Conditions Min Max Unit V DS drain-source voltage (DC) T j =2to C 2 V V GS gate-source voltage (DC) ±2 V I D drain current (DC) T sp =8 C; Figure 2 and 3 2.9 I DM peak drain current T sp =2 C; pulsed; t p µs 2 P tot total power dissipation T sp =8 C; Figure 3. W T stg storage temperature + C T j operating junction temperature + C Source-drain diode I S source (diode forward) current (DC) T sp =8 C 3. I SM peak source (diode forward) current T sp =2 C; pulsed; t p µs 2 9397 7 7896 Philips Electronics N.V. 2. ll rights reserved. Product specification Rev. 6 January 2 2 of 3
2 P der (%) 3aa7 2 I der (%) 3aa2 8 8 6 6 4 4 2 2 2 7 2 7 T sp ( o C) 2 7 2 7 T sp ( o C) P der = P tot ---------------------- % P tot ( 2 C ) V GS V I D I der = ------------------ % I D2C ( ) Fig. Normalized total power dissipation as a function of solder point temperature. Fig 2. Normalized continuous drain current as a function of solder point temperature. 2 I D () R DSon = V DS/ I D 3ae6 tp = µs µs - P t p δ = T D.C. ms ms ms -2 t p T t 2 3 V DS (V) Fig 3. T sp =2 C; I DM is single pulse Safe operating area; continuous and peak drain currents as a function of drain-source voltage. 9397 7 7896 Philips Electronics N.V. 2. ll rights reserved. Product specification Rev. 6 January 2 3 of 3
7. Thermal characteristics Table 4: Thermal characteristics Symbol Parameter Conditions Value Unit R th(j-sp) thermal resistance from junction to solder mounted on a metal clad substrate; Figure 4 2 K/W point 7. Transient thermal impedance 2 3ae Z th(j-sp) (K/W) δ =..2...2 P t p δ = T - Fig 4. T sp =2 C -2 single pulse -4-3 -2 - t 2 p (s) Transient thermal impedance from junction to solder point as a function of pulse duration. t p T t 9397 7 7896 Philips Electronics N.V. 2. ll rights reserved. Product specification Rev. 6 January 2 4 of 3
8. Characteristics Table : Characteristics T j =2 C unless otherwise specified Symbol Parameter Conditions Min Typ Max Unit Static characteristics V (BR)DSS drain-source breakdown voltage I D = 2 µ; V GS =V; T j =2 C 2 24 V V GS(th) gate-source threshold voltage I D = m; V DS =V GS ; Figure 9 T j =2 C 2 4 V T j = C.2 V T j = C 6 V I DSS drain-source leakage current V DS = 6 V; V GS =V; T j =2 C µ V DS = 2 V; V GS =V; T j = C. m I GSS gate-source leakage current V GS = ±2 V; V DS =V n R DSon drain-source on-state resistance V GS = V; I D = 2. ; Figure 7 and 8 T j =2 C 3 6 mω T j = C 32 43 mω Dynamic characteristics g fs forward transconductance V DS =V; I D = 2.9 ; Figure S Q g(tot) total gate charge I D = 3 ; V DD = V; V GS =V;Figure 4 4 nc Q gs gate-source charge 4. nc Q gd gate-drain (Miller) charge 2 6. nc C iss input capacitance V GS =V; V DS = 2 V; f = MHz; Figure 2 33 pf C oss output capacitance 4 pf C rss reverse transfer capacitance 7 pf t d(on) turn-on delay time V DD = V; R D = Ω; 2 2 ns t r rise time V GS =V;R G =6Ω 2 ns t d(off) turn-off delay time 8 ns t f fall time 2 4 ns Source-drain (reverse) diode V SD source-drain (diode forward) voltage I S = 2.3 ; V GS =V;Figure 3.7. V t rr reverse recovery time I S = 2.9 ; di S /dt = /µs; V GS =V ns Q r recovery charge.4 µc 9397 7 7896 Philips Electronics N.V. 2. ll rights reserved. Product specification Rev. 6 January 2 of 3
2 I D () V GS = V V 3ae7 2 I D () V DS > I D X R DSon 3ae9 4. V 4 V T j = ºC 2 ºC Fig. T j =2 C 3. V 2 3 4 V DS (V) Output characteristics: drain current as a function of drain-source voltage; typical values. Fig 6. 2 3 4 V GS (V) T j =2 C and C; V DS > I D R DSon Transfer characteristics: drain current as a function of gate-source voltage; typical values..3 R DSon (Ω).2.2.. V GS = 4 V 4. V 3ae8 T j = 2 ºC V V I D () 2 a 3 2.8 2.6 2.4 2.2 2.8.6.4.2.8.6.4.2 3aa3-6 -2 2 6 4 8 T j ( o C) T j =2 C R a = DSon --------------------------- R DSon ( 2 C ) Fig 7. Drain-source on-state resistance as a function of drain current; typical values. Fig 8. Normalized drain-source on-state resistance factor as a function of junction temperature. 9397 7 7896 Philips Electronics N.V. 2. ll rights reserved. Product specification Rev. 6 January 2 6 of 3
3aa32-3aa3 4. V GS(th) 4 (V) 3. max. I D () -2 3 2. typ. -3 min typ max 2. min -4. - -6-2 2 6 4 8 T j ( o C) -6 2 3 4 V GS (V) Fig 9. I D = m; V DS =V GS T j =2 C; V DS =V Gate-source threshold voltage as a function of junction temperature. Fig. Sub-threshold drain current as a function of gate-source voltage. 3 g fs (S) 2 2 V DS > I D X R DSon T j = 2 ºC 3ae 4 C iss, C oss, C rss (pf) 3 3ae2 C iss ºC 2 C oss C rss I D () 2 T j =2 C and C; V DS > I D R DSon Fig. Forward transconductance as a function of drain current; typical values. - 2 V DS (V) V GS = V; f = MHz Fig 2. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values. 9397 7 7896 Philips Electronics N.V. 2. ll rights reserved. Product specification Rev. 6 January 2 7 of 3
2 I S () V GS = V 3ae V GS (V) 8 I D = 3 T j = 2 ºC 3ae3 V DD = 4 V V 6 V 6 4 T j = ºC 2 ºC 2.2.4.6.8 V SD (V) T j =2 C and C; V GS =V Fig 3. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values. 3 Q G (nc) 4 I D = 3 ; V DD = 4 V, V and 6 V Fig 4. Gate-source voltage as a function of gate charge; typical values. 9397 7 7896 Philips Electronics N.V. 2. ll rights reserved. Product specification Rev. 6 January 2 8 of 3
9. Package outline SO8: plastic small outline package; 8 leads; body width 3.9 mm SOT96- SO8: plastic small outline package; 8 leads; body width 3.9 mm SOT96- D E X D c E X y c H E v M Z y H E v M 8 8 Z pin index pin index 2 2 Q Q ( ) 3 ( 3) θ θ L p L p 4 4 L L e e b p b p w M w M detail X detail X 2. mm scale 2. mm scale DIMENSIONS (inch dimensions are derived from the original mm dimensions) DIMENSIONS UNIT(inch max. dimensions are 2 derived 3 from b p the c original D () mm E (2) dimensions) e H E L L p Q v w y Z () θ UNIT.2.4.49.2. 4. 6.2..7.7 mm.7.2.27..2.2. max.. 2.2 3 b p.36 c.9 D () 4.8 E 3.8 e.8 H.4.6.3 E L L p Q v w y Zo 8 θ mm inches.7 o.69..7.9..2.6...244.39.28.28.2.4.49.2. 4. 6.2.4..7...4.7.4.49.2.4.7.9..27.228..6.24.2.2.2...2.36.9 4.8 3.8.8.4.6.3 o 8 inches o Notes.69..7.9..2.6...244.39.28.28.4...4. Plastic.4 or metal.49 protrusions of..4 mm maximum.7per.9 side are. not included..228.6.24.2 2. Plastic or metal protrusions of.2 mm maximum per side are not included. Notes. Plastic or metal OUTLINE protrusions of. mm maximum per side REFERENCES are not included. VERSION 2. Plastic or metal protrusions of.2 IEC mm maximum per JEDEC side are not included. EIJ SOT96- OUTLINE VERSION SOT96-76E3 MS-2 REFERENCES IEC JEDEC EIJ 76E3 MS-2 EUROPEN PROJECTION EUROPEN PROJECTION ISSUE DTE 97--22 99-2-27 ISSUE DTE 97--22 99-2-27 Fig. SOT96- (SO8). 9397 7 7896 Philips Electronics N.V. 2. ll rights reserved. Product specification Rev. 6 January 2 9 of 3
. Revision history Table 6: Revision history Rev Date CPCN Description 26 - Product specification; initial version 9397 7 7896 Philips Electronics N.V. 2. ll rights reserved. Product specification Rev. 6 January 2 of 3
. Data sheet status Datasheet status Product status Definition [] Objective specification Development This data sheet contains the design target or goal specifications for product development. Specification may change in any manner without notice. Preliminary specification Qualification This data sheet contains preliminary data, and supplementary data will be published at a later date. Philips Semiconductors reserves the right to make changes at any time without notice in order to improve design and supply the best possible product. Product specification Production This data sheet contains final specifications. Philips Semiconductors reserves the right to make changes at any time without notice in order to improve design and supply the best possible product. [] Please consult the most recently issued data sheet before initiating or completing a design. 2. Definitions 3. Disclaimers Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition Limiting values given are in accordance with the bsolute Maximum Rating System (IEC 634). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. pplication information pplications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Life support These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. 9397 7 7896 Philips Electronics N.V. 2 ll rights reserved. Product specification Rev. 6 January 2 of 3
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Contents Description............................. 2 Features............................... 3 pplications............................ 4 Pinning information...................... Quick reference data..................... 2 6 Limiting values.......................... 2 7 Thermal characteristics................... 4 7. Transient thermal impedance.............. 4 8 Characteristics.......................... 9 Package outline......................... 9 Revision history........................ Data sheet status....................... 2 Definitions............................ 3 Disclaimers............................ Philips Electronics N.V. 2. Printed in The Netherlands ll rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 6 January 2 Document order number: 9397 7 7896