SPW5N5C3 CoolMOS Power Transistor V DS @ T jmax 56 V Feature R DS(on).7 Ω New revolutionary high voltage technology Worldwide best R DS(on) in TO-47 Ultra low gate charge Periodic avalanche rated Extreme dv/dt rated Ultra low effective capacitances Improved transconductance I D 5 PG-TO47 Type Package Marking SPW5N5C3 PG-TO47 5N5C3 Maximum Ratings Parameter Symbol Value Unit Continuous drain current I D T C = 5 C T C = C 5 3 Pulsed drain current, t p limited by T jmax I D puls 156 valanche energy, single pulse I D =, V DD = 5 V E S 18 mj valanche energy, repetitive t R limited by T 1) jmax E R 1 I D =, V DD = 5 V valanche current, repetitive t R limited by T jmax I R Gate source voltage V GS ± V Gate source voltage C (f >1Hz) V GS ±3 Power dissipation, T C = 5 C P tot 417 W Operating and storage temperature T j, T stg -55... +15 C 4) Reverse diode dv/dt dv/dt 15 V/ns Rev..6 Page 1 8--11 Please note the new package dimensions arccording to PCN 9-134-
SPW5N5C3 Maximum Ratings Parameter Symbol Value Unit Drain Source voltage slope dv/dt 5 V/ns V DS = 4 V, I D = 5, T j = 15 C Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Thermal resistance, junction - case R thjc - -.3 K/W Thermal resistance, junction - ambient, leaded R thj - - 6 Soldering temperature, wavesoldering 1.6 mm (.63 in.) from case for s T sold - - 6 C Electrical Characteristics, at Tj=5 C unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. Drain-source breakdown voltage V (BR)DSS V GS =V, I D =.5m 5 - - V Drain-Source avalanche V (BR)DS V GS =V, I D = - 6 - breakdown voltage Gate threshold voltage V GS(th) I D =7μΑ, V GS =V DS.1 3 3.9 Zero gate voltage drain current I DSS V DS =5V, V GS =V, μ T j =5 C, T j =15 C -.5 5 - - 5 Gate-source leakage current I GSS V GS =V, V DS =V - - n Drain-source on-state resistance R DS(on) V GS =V, I D =3, T j =5 C T j =15 C -.6.7 -.16 - Gate input resistance R G f=1mhz, open Drain -.7 - Ω Rev..6 Page 8--11 Please note the new package dimensions arccording to PCN 9-134-
SPW5N5C3 Electrical Characteristics, at T j = 5 C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. Transconductance g fs V DS *I D *R DS(on)max, - 4 - S I D =3 Input capacitance C iss V GS =V, V DS =5V, - 68 - pf Output capacitance C oss f=1mhz - - Reverse transfer capacitance C rss - 15 - Effective output capacitance, ) C o(er) energy related V GS =V, V DS =V to 4V - 1 - pf Effective output capacitance, 3) C o(tr) - 469 - time related Turn-on delay time t d(on) V DD =38V, V GS =/V, - - ns Rise time t r I D =5, R G =1.8Ω - 3 - Turn-off delay time t d(off) - 1 - Fall time t f - - Gate Charge Characteristics Gate to source charge Q gs V DD =38V, I D =5-3 - nc Gate to drain charge Q gd - 16 - Gate charge total Q g V DD =38V, I D =5, - 9 - V GS = to V Gate plateau voltage V (plateau) V DD =38V, I D =5-5 - V 1 Repetitve avalanche causes additional power losses that can be calculated as PV =E R *f. Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from to 8% V DSS. 3 Co(tr) is a fixed capacitance that gives the same charging time as C oss while V DS is rising from to 8% V DSS. 4 ISD <=I D, di/dt<=/us, V DClink =4V, V peak <V BR, DSS, T j <T j,max. Identical low-side and high-side switch. Rev..6 Page 3 8--11 Please note the new package dimensions arccording to PCN 9-134-
SPW5N5C3 Electrical Characteristics, at T j = 5 C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. Inverse diode continuous I S T C =5 C - - 5 forward current Inverse diode direct current, I SM - - 156 pulsed Inverse diode forward voltage V SD V GS =V, I F =I S - 1 1. V Reverse recovery time t rr V R =38V, I F =I S, - 58 - ns Reverse recovery charge Q rr di F /dt=/μs - - μc Peak reverse recovery current I rrm - 7 - Peak rate of fall of reverse di rr /dt - 9 - /μs recovery current Typical Transient Thermal Characteristics Symbol Value Unit Symbol Value Unit typ. typ. Thermal resistance Thermal capacitance R th1.689 K/W C th1.81 Ws/K R th.547 C th.41 R th3.11 C th3.5415 R th4.54 C th4.14 R th5.71 C th5.5 R th6.36 C th6.158 P tot (t) T j R th1 R th,n Tcase External Heatsink C th1 C th C th,n T amb Rev..6 Page 4 8--11 Please note the new package dimensions arccording to PCN 9-134-
SPW5N5C3 1 Power dissipation P tot = f (T C ) 5 SPW5N5C3 W Safe operating area I D = f ( V DS ) parameter : D =, T C =5 C 3 4 35 Ptot 3 ID 1 5 15-1 tp =.1 ms tp =.1 ms tp =.1 ms tp = 1 ms DC 5 4 6 8 1 C 16 T C - 1 V 3 V DS 3 Transient thermal impedance Z thjc = f (t p ) parameter: D = t p /T K/W 4 Typ. output characteristic I D = f (V DS ); T j =5 C parameter: t p = μs, V GS 8 V ZthJC -1 ID 7.5V 7V - 16 6.5V -3 D =.5 D =. D =.1 D =.5 D =. D =.1 single pulse 1 8 4 6V 5.5V 5V -4-7 -6-5 -4-3 s -1 t p 4.5V 4 8 1 16 V 6 V DS Rev..6 Page 5 8--11 Please note the new package dimensions arccording to PCN 9-134-
SPW5N5C3 5 Typ. output characteristic I D = f (V DS ); T j =15 C parameter: t p = μs, V GS 6 Typ. drain-source on resistance R DS(on) =f(i D ) parameter: T j =15 C, V GS 16 V 6.5V.5 Ω 4V 4.5V 5V 5.5V 6V 6.5V ID 1 6V R DS(on).4.35 8 5.5V.3 6 5V.5 4 4.5V 4V..15 V 4 8 1 16 V 6 7 Drain-source on-state resistance R DS(on) = f (T j ) parameter : I D = 3, V GS = V.38 SPW5N5C3 Ω.3 V DS.1 4 6 8 1 16 I D 8 Typ. transfer characteristics I D = f ( V GS ); V DS x I D x R DS(on)max parameter: t p = μs 8 5 C RDS(on).8.4. ID 16.16.1.8.4 98% typ 1 8 4 15 C -6-6 C 18 T j 1 3 4 5 6 7 8 V V GS Rev..6 Page 6 8--11 Please note the new package dimensions arccording to PCN 9-134-
SPW5N5C3 9 Typ. gate charge V GS = f (Q Gate ) parameter: I D = 5 pulsed 16 SPW5N5C3 V Forward characteristics of body diode I F = f (V SD ) parameter: T j, tp = μs 3 SPW5N5C3 1 VGS. V DS max IF.8 V DS max 8 6 4 1 T j = 5 C typ T j = 15 C typ T j = 5 C (98%) T j = 15 C (98%) 4 8 1 16 4 8 3 36nC 4 Q Gate 11 valanche SO I R = f (t R ) par.: T j 15 C.4.8 1. 1.6.4 V 3 V SD 1 valanche energy E S = f (T j ) par.: I D =, V DD = 5 V 16 mj 14 IR 1 ES Tj (STRT)=5 C 1 8 6 4 Tj(STRT)=15 C.5-3 - -1 1 μs 4 t R 4 6 8 1 C 16 T j Rev..6 Page 7 8--11 Please note the new package dimensions arccording to PCN 9-134-
SPW5N5C3 13 Drain-source breakdown voltage V (BR)DSS = f (T j ) 6 SPW5N5C3 V 14 valanche power losses P R = f (f ) parameter: E R =1mJ - V(BR)DSS 57 56 55 54 PV 8 7 6 53 5 5 5 4 5 49 3 48 47 46 45-6 - 6 C 18 T j 4 5 Hz 6 f 15 Typ. capacitances C = f (V DS ) parameter: V GS =V, f=1 MHz 5 pf 16 Typ. C oss stored energy E oss =f(v DS ) 4 μj Ciss 4 18 C Eoss 16 14 3 Coss 1 8 Crss 6 4 1 3 4 V 6 V DS Rev..6 Page 8 3 V 5 V DS 8--11
SPW5N5C3 Definition of diodes switching characteristics Rev..6 Page 9 8--11
5 G Rev..6 P 8 11 Please note the new package dimensions arccording to PCN 9-134-
SPW5N5C3 Published by Infineon Technologies G 8176 Munich, Germany 8 Infineon Technologies G ll Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev..6 Page 11 8--11 Please note the new package dimensions arccording to PCN 9-134-
Data sheet erratum PCN 9-134- New package outlines TO-47 1 New package outlines TO-47 ssembly capacity extension for CoolMOSTM technology products assembled in lead-free package PG-TO47-3 at subcontractor SE (Weihai) Inc., China (Changes are marked in blue.) Figure 1 Outlines TO-47, dimensions in mm/inches Final Data Sheet Erratum Rev.., --1