TCR22-x Series RoHS Description Excellent unidirectional switches for phase control applications such as heating and motor speed controls. Sensitive gate SCRs are easily triggered with microamps of current as furnished by sense coils, proximity switches, and microprocessors. Features & Benefits RoHS compliant Glass passivated junctions Voltage capability up to 6 V Surge capability up to 2 A Main Features Symbol Value Unit I T(RMS) 1.5 A V DRM /V RRM 4 or 6 V I GT 2 μa Applications Typical applications are capacitive discharge systems for strobe lights and gas engine ignition. Also controls for power tools, home/brown goods and white goods appliances. Schematic Symbol Additional Information A K Datasheet Resources Samples G Absolute Maximum Ratings Sensitive SCRs Symbol Parameter Test Conditions Value Unit I T(RMS) RMS on-state current T C = 4 C 1.5 A I T(AV) Average on-state current T C = 4 C.95 A I TSM Peak non-repetitive surge current single half cycle; f = 5Hz; (initial) = 25 C single half cycle; f = 6Hz; (initial) = 25 C I 2 t I 2 t Value for fusing t p = 8.3 ms 1.6 A 2 s di/dt Critical rate of rise of on-state current f = 6 Hz ; = 11 C 5 A/μs I GM Peak gate current = 11 C 1 A P G(AV) Average gate power dissipation = 11 C.1 W T stg Storage temperature range -4 to 15 C Operating junction temperature range -4 to 11 C 16 2 A
Electrical Characteristics ( = 25 C, unless otherwise specified) Symbol Test Conditions Value Unit I GT V D = 6V; R L = Ω MAX. 2 μa V GT V D = 6V; R L = Ω MAX..8 V dv/dt V D = V DRM ; R GK = 1kΩ 4V 4 MIN. 6V 3 V/μs V GD V D = V DRM ; R L = 3.3 kω; = 11 C MIN..25 V V GRM I GR = 1μA MIN. 6 V I H I T = 2mA (initial) MAX. 5 ma t q (1) MAX. 5 μs t gt I G = 2 x I GT ; PW = 15µs; I T = 3A TYP. 2 μs (1) I T =1A; t p =5µs; dv/dt=5v/µs; di/dt=-1a/µs Static Characteristics Symbol Test Conditions Value Unit V TM I T = 3A; t p = 38 µs MAX. 1.5 V I DRM / I RRM V DRM = V RRM = 25 C 4V 1 6V MAX. 2 μa = 11 C Thermal Resistances Symbol Parameter Value Unit R θ(j-c) Junction to case (AC) 5 C/W R θ(j-a) Junction to ambient 16 C/W
Figure 1: Normalized DC Gate Trigger Current vs. Junction Temperature Figure 2: Normalized DC Gate Trigger Voltage vs. Junction Temperature 4. 2. Ratio of I GT /I GT ( = 25 C) 3. 2. 1. Ratio of V GT / V GT ( = 25 C) 1.5 1..5. -4-15 1 35 6 85 11 Junction Temperature ( ) -- ( C). -4-15 1 35 6 85 11 Junction Temperature ( ) -- ( C) Figure 3: Normalized DC Holding Current vs. Junction Temperature Figure 4: Normalized DC Latching Current vs. Junction Temperature 3. 3. 2.5 2.5 Ratio of I H /I H ( = 25 C) 2. 1.5 1. Ratio of I L / I L ( = 25 C) 2. 1.5 1..5.5. -4-15 1 35 6 85 11 Junction Temperature ( ) -- ( C). -4-15 1 35 6 85 11 Junction Temperature ( ) -- ( C) Figure 5: On-State Current vs. On-State Voltage (Typical) Figure 6: Power Dissipation (Typical) vs. RMS On-State Current Instantaneous On-state Current (i T ) Amps 1 = 25 C 8 6 4 2.7.8.9 1. 1.1 1.2 1.3 1.4 1.5 1.6 Instantaneous On-state Voltage (v T ) Volts Average On-State Power Dissipation [P D(AV) ] - (Watts) 1.5 1..5...5 1. 1.5 RMS On-State Current [I T(RMS )] - (Amps)
Figure 7: Maximum Allowable Case Temperature vs. RMS On-State Current Figure 8: Maximum Allowable Case Temperature vs. Average On-State Current Maximum Allowable Case Temperature (T C 115 15 95 85 65 55 45 35..2.4.6.8 1. 1.2 1.4 1.6 1.8 RMS On-State Current [I T(RMS) Maximum Allowable Case Temperature (T C 115 15 95 85 65 55 45 35..2.4.6.8 1. 1.2 Average On-State Current [I T(AVE) Figure 9: Maximum Allowable Ambient Temperature vs. RMS On-State Current Figure 1: Maximum Allowable Ambient Temperature vs. Average On-State Current Maximum Allowable Ambient Temperature (T A 12 8 6 4 2 FREE AIR RATING..2.4.6.8 1. RMS On-State Current [I T(RMS) Maximum Allowable Ambient Temperature (T A 12 8 6 4 2 FREE AIR RATING..1.2.3.4.5.6 Average On-State Current [I T(AVE) Figure 11: Peak Repetitive Capacitor Discharge Current Figure 12: Peak Repetitive Sinusoidal Pulse Current 18 18 Peak Discharge Current (I TM ) - Amps 16 14 12 8 6 4 2 I TRM t W 1 1 Pulse Current Duration (t W ) - μs 1 Hz 12 Hz 6 Hz Peak Discharge Current (I TM ) - Amps 16 14 12 8 6 4 2 I TM t W 1 Hz 12 Hz 6 Hz 1 1 Pulse Current Duration (t W ) - μs
Figure 13: Typical DC Gate Trigger Current with R GK vs. Junction Temperature for TCR22-8 Figure 13: Typical DC Holding Current with R GK vs. Junction Temperature for TCR22-8 Maximum Allowable Case Temperature (T C 115 15 95 85 65 55 45 35..2.4.6.8 1. 1.2 1.4 1.6 1.8 RMS On-State Current [I T(RMS) Maximum Allowable Case Temperature (T C 115 15 95 85 65 55 45 35..2.4.6.8 1. 1.2 Average On-State Current [I T(AVE) Figure 15: Typical Static dv/dt with R GK vs. Junction Temperature for TCR22-8 Figure 16: Typical turn off time with R GK vs. Junction Temperature for TCR22-8 Maximum Allowable Ambient Temperature (T A 12 8 6 4 2 FREE AIR RATING..2.4.6.8 1. RMS On-State Current [I T(RMS) Maximum Allowable Ambient Temperature (T A 12 8 6 4 2 FREE AIR RATING..1.2.3.4.5.6 Average On-State Current [I T(AVE)
Figure 17: Surge Peak On-State Current vs. Number of Cycles Peak Surge (Non-repetitive) On-state Current (I TSM ) Amps. 1. 1. SUPPLY FREQUENCY: 6 Hz Sinusoidal LOAD: Resistive RMS On-State Current: [I T(RMS) ]: Maximum Rated Value at Specified Case Temperature Notes: 1. Gate control may be lost during and immediately following surge current interval. 2. Overload may not be repeated until junction temperature has returned to steady-state rated value..1 1 1 Surge Current Duration -- Full Cycles Figure 18: Simple Test Circuit for Gate Trigger Voltage and Current 6V DC + Reset Normally-closed Pushbutton V1 D.U.T. 1 k (1%) I GT I G IN41 V GT R1 Note: V1 V to 1 V dc meter V GT V to 1 V dc meter I G ma to 1 ma dc milliammeter R1 1 k potentiometer To measure gate trigger voltage and current, raise gate voltage (V GT ) until meter reading V1 drops from 6 V to 1 V. Gate trigger voltage is the reading on V GT just prior to V1 dropping. Gate trigger current I GT Can be computed from the relationship V GT IGT = I G - Amps where I G is reading (in amperes) on meter just prior to V1 dropping Note: I GT may turn out to be a negative quantity (trigger current flows out from gate lead). If negative current occurs, I GT value is not a valid reading. Remove 1 k resistor and use I G as the more correct I GT value. This will occur on 12 µa gate products.
Temperature Thyristors Soldering Parameters Reflow Condition Pb Free assembly T P t P - Temperature Min (T s(min) ) 15 C Ramp-up Pre Heat - Temperature Max (T s(max) ) 2 C - Time (min to max) (t s ) 6 18 secs Average ramp up rate (Liquidus Temp) (T L ) to peak 5 C/second max T L T S(max) T S(min) Preheat t L Ramp-down T S(max) to T L - Ramp-up Rate 5 C/second max t S - Temperature (T L ) (Liquidus) 217 C Reflow - Temperature (t L ) 6 15 seconds Peak Temperature (T P ) 26 +/-5 C 25 time to peak temperature Time Time within 5 C of actual peak Temperature (t p ) 2 4 seconds Ramp-down Rate 5 C/second max Time 25 C to peak Temperature (T P ) 8 minutes Max. Do not exceed 28 C Physical Specifications Environmental Specifications Terminal Finish Body Material Lead Material Design Considerations % Matt Tin-plated/Pb-free Solder Dipped UL recognized epoxy meeting flammability rating 94V- Copper Alloy Careful selection of the correct component for the application s operating parameters and environment will go a long way toward extending the operating life of the Thyristor. Good design practice should limit the maximum continuous current through the main terminals to % of the component rating. Other ways to ensure long life for a power discrete semiconductor are proper heat sinking and selection of voltage ratings for worst case conditions. Overheating, overvoltage (including dv/dt), and surge currents are the main killers of semiconductors. Correct mounting, soldering, and forming of the leads also help protect against component damage. Test AC Blocking Temperature Cycling Temperature/ Humidity High Temp Storage Low-Temp Storage Resistance to Solder Heat Solderability Lead Bend Specifications and Conditions MIL-STD-, M-14, Cond A Applied Peak AC voltage @ 11 C for 8 hours MIL-STD-, M-151, cycles; -4 C to +15 C; 15-min dwell-time EIA / JEDEC, JESD22-A11 8 hours; 32V - DC: 85 C; 85% rel humidity MIL-STD-, M-131, 8 hours; 15 C 8 hours; -4 C MIL-STD- Method 231 ANSI/J-STD-2, category 3, Test A MIL-STD-, M-236 Cond E
Dimensions TO-92 (E Package) Cathode T C Measuring Point A B Anode Gate E Dimension Inches Millimeters Min Max Min Max A.176.196 4.47 4.98 B.5 12.7 D.95.15 2.41 2.67 E.15 3.81 F.46.54 1.16 1.37 G.135.145 3.43 3.68 H.88.96 2.23 2.44 J.176.186 4.47 4.73 K.88.96 2.23 2.44 L.13.19.33.48 M.13.17.33.43 M L F D K J H G All leads insulated from case. Case is electrically nonconductive. Product Selector Voltage Part Number 4V 6V 8V V Gate Sensitivity Type Package TCR22-6 X 2µA Sensitive SCR TO-92 TCR22-8 X 2µA Sensitive SCR TO-92 Note: x = Voltage Packing Options Part Number Marking Weight Packing Mode Base Quantity TCR22-x TCR22-x.19 g Bulk 2 TCR22-xRP TCR22-x.19 g Reel Pack 2 TCR22-xAP TCR22-x.19 g Ammo Pack 2 Note: x = Voltage Part Numbering System Part Marking System TCR 22 8 DEVICE TYPE TCR: SCR LEAD FORM DIMENSIONS xx: Lead Form Option CURRENT RATING 22: 1.5A VOLTAGE RATING 6: 4V 8: 6V Line1 = Littelfuse Part Number Line2 = continuation Littelfuse Part Number Y = Last Digit of Calendar Year M = Letter Month Code (A-L for Jan-Dec) L = Location Code DD = Calendar Date
TO-92 (3-lead) Reel Pack (RP) Radial Leaded Specifications Meets all EIA-468-C Standards 1.6 (41.).236 (6.).2 (.5).98 (2.5) MAX 1.26 (32.).78 (18.).354 (9.).5 (12.7).1 (2.54) 14.17(36.) Cathode.2 (5.8) Anode Gate.157 DIA (4.) Flat up 1.97 (5.) Direction of Feed Dimensions are in inches (and millimeters). TO-92 (3-lead) Ammo Pack (AP) Radial Leaded Specifications Meets all EIA-468-C Standards 1.62 (41.2).78 (18.).236 (6.).2 (.5).354 (9.).98 (2.5) MAX 1.27 (32.2).5 (12.7).1 (2.54) Anode.2 (5.8) Cathode Gate.157 DIA (4.) Direction of Feed Flat down 25 Devices per fold 1.85 (47.) 12.2 (31.) 1.85 (47.) Dimensions are in inches (and millimeters). 13.3 (338.)