E-MAIL: DISCRETE SEMICONDUCTORS DATA SHEET September 1991
E-MAIL: FEATURES PIN CONFIGURATION Emitter-ballasting resistors for an optimum temperature profile Gold metallization ensures excellent reliability. halfpage 1 DESCRIPTION NPN silicon planar epitaxial transistor encapsulated in a -lead SOT17D envelope with a ceramic cap. It is designed primarily for use as a driver stage in base stations in the 9 MHz communications band. All leads are isolated from the mounting base. Top view MSB7 3 b MBB1 c e PINNING - SOT17D PIN DESCRIPTION 1 emitter base 3 collector emitter Fig.1 Simplified outline and symbol. WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. QUICK REFERENCE DATA RF performance at T mb = 5 C in a common emitter class-b test circuit. MODE OF OPERATION f (MHz) V CE (V) P L (W) G p (db) c.w. narrow band 9 > 8 > 55 η c (%) September 1991
E-MAIL: LIMITING VALUES In accordance with the Absolute Maximum System (IEC 13). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V CBO collector-base voltage open emitter 5 V V CEO collector-emitter voltage open base 7 V V EBO emitter-base voltage open collector 3.5 V I C collector current DC value ma I CM collector current peak value 6 ma f > 1 MHz P tot total power dissipation f > 1 MHz; 6 W T mb =5 C T stg storage temperature range 65 15 C T j junction operating temperature C 1 MBK66 P tot (W) 8 ΙΙ Ι 8 1 16 T h ( C) (I) Continuous RF operation. (II) Short time operation during mismatch. Fig. Power/temperature derating curves. THERMAL RESISTANCE SYMBOL PARAMETER CONDITIONS MAX. UNIT R th j-mb(rf) from junction to mounting base P L =.5 W; T mb =5 C K/W September 1991 3
E-MAIL: CHARACTERISTICS T j = 5 C. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V (BR)CBO collector-base breakdown voltage open emitter; 5 V I C = 5 ma V (BR)CEO collector-emitter breakdown voltage V BE =; 7 V I C = 1 ma V (BR)EBO emitter-base breakdown voltage open collector; 3.5 V I E =.5 ma I CES collector-emitter leakage current V BE =; ma V CE = 7 V h FE DC current gain V CE = V; 5 I C = 15 ma E SBR second breakdown energy L = 5 mh;.5 mj R BE = 1 Ω; f = 5 Hz C c collector capacitance V CB = V; 3 pf I E = I e =; f = 1 MHz C re feedback capacitance V CE = V; I C = ; f = 1 MHz 1.3 pf 1 h FE 8 MBK67 8 C c (pf) 6 MBK68 6.1..3..5 I C (A) 1 3 V CB (V) V CE = V; T j =5 C. I E =i e = ; f = 1 MHz. Fig.3 DC current gain as a function of collector current, typical values. Fig. Collector capacitance as a function of collector-base voltage, typical values. September 1991
E-MAIL: APPLICATION INFORMATION RF performance T mb = 5 C in a common emitter class-b test circuit. MODE OF OPERATION f (MHz) c.w. narrow band 9 > 8 typ. 9.3 V CE (V) P L (W) G p (db) η c (%) > 55 typ. 63 1 MBK69 1 3 MBK7 G p (db) G p η C (%) P L (W) η C 5 5 1 1 3 P L (W).1..3. P S (W) Class-B operation; V CE = V; f = 9 MHz; T mb = 5 C. Class-B operation; V CE = V; f = 9 MHz; T mb = 5 C. Fig.5 Gain and efficiency as functions of load power, typical values. Fig.6 Load power as a function of drive power, typical values. Ruggedness in class-b operation The is capable of withstanding a full load mismatch corresponding to VSWR = 5:1 through all phases under the following conditions: V CE = V, f = 9 MHz, T mb =5 C, and rated output power. September 1991 5
E-MAIL: handbook, full pagewidth 5 Ω C T.U.T. C7 L1 L L5 L8 L9,,,,,,,,,,,,, C1 5 Ω C1 C3 C8 C9 L L6 L7 +V CC R1 L3 C R C5 C6 MDA559 Fig.7 Class-B test circuit at f = 9 MHz. List of components (see test circuit) COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE NO. C1, C3, C8, C9 film dielectric trimmer 1. to 5.5 pf 89 91 C multilayer ceramic chip capacitor.7 pf (note 1) C, C6, C1 multilayer ceramic chip capacitor pf C5 63 V electrolytic capacitor 1 µf C7 multilayer ceramic chip capacitor. pf (note 1) L1 stripline (note ) 5 Ω 8 mm. mm L 7 turns enamelled. mm copper wire 5 nh int. dia. mm; leads 5 mm L3, L7 grade 3B Ferroxcube wideband HF 31 366 choke L, L5 stripline (note ) 35 Ω 1 mm mm; L6 6 turns enamelled 1 mm copper wire 1 nh int. dia. 6 mm; length 1 mm; leads 5 mm L8 stripline (note ) 5 Ω 31 mm. mm L9 stripline (note ) 5 Ω 9 mm. mm R1, R. W metal film resistor 1 Ω, 5% Notes 1. American Technical Ceramics type 1A or capacitor of the same quality.. The striplines are on a double copper-clad printed circuit board, with PTFE fibre-glass dielectric (ε r =.), thickness 1 3 inch. September 1991 6
E-MAIL: handbook, full pagewidth 17 mm 7 mm M rivets M3 +V CC R1 R C5 C L7 L3 L L6 C L1 L L5 L8 C6 C7 L9 C1 C1 C3 C8 C9 MDA56 The components are mounted on one side of a copper clad PTFE fibre-glass board; the other side is unetched and serves as a ground plane. Earth connections from the component side to the ground plane are made by fixing screws, hollow rivets and copper straps under the emitters. Fig.8 Component layout for 9 MHz class-b test circuit. September 1991 7
E-MAIL: 1 r i, x i (Ω) 8 x i MBK71 8 R L, X L (Ω) 6 MBK7 X L 6 r i R L 8 85 9 95 1 f (MHz) 8 85 9 95 1 f (MHz) Class-B operation; V CE = V; P L = W; T mb =5 C. Class-B operation; V CE = V; P L = W; T mb =5 C. Fig.9 Input impedance (series components) as a function of frequency, typical values. Fig.1 Load impedance (series components) as a function of frequency, typical values. 1 G p (db) 1 MBK73 8 6 Z i Z L MBA51 8 85 9 95 1 f (MHz) Class-B operation; V CE = V; P L = W; T mb =5 C. Fig.11 Definition of transistor impedance. Fig.1 Power gain as a function of frequency, typical values. September 1991 8
E-MAIL: PACKAGE OUTLINE Studless ceramic package; leads SOT17D D A Q D 1 c H b b 1 H 1 3 5 1 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A b b 1 c D D 1 H Q mm inches 3.71.89.16.11 3.31 3..13.1.89.63.35.5.16.1.6. 5..95.5.195 5.33 5.8.1. 6.17.63 1.3.97 1.15.88.5.35 OUTLINE VERSION REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE SOT17D 97-6-8 September 1991 9
E-MAIL: DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 13). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. September 1991 1