DISCRETE SEMICONDUCTORS DATA SHEET handbook, columns M3D6 BYV 996 Oct 7
BYV FEATURES Glass passivated High maximum operating temperature Low leakage current Excellent stability Guaranteed avalanche energy absorption capability Available in ammo-pack. DESCRIPTION Rugged glass SOD57 package, using a high temperature alloyed construction. /3 page k(datasheet) a This package is hermetically sealed and fatigue free as coefficients of expansion of all used parts are matched. MAM47 Fig. Simplified outline (SOD57) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 34). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V RRM repetitive peak reverse voltage V V R continuous reverse voltage V I F(AV) average forward current T tp =8 C; lead length = mm; averaged over any ms period; see Fig.; see also Fig.4. A T amb =6 C; PCB mounting (see Fig.); averaged over any ms period; see Fig.3; see also Fig.4.3 A I FRM repetitive peak forward current T tp =8 C; see Fig.6 8 A T amb =6 C; see Fig.7 A I FSM non-repetitive peak forward current t = ms half sine wave; 5 A T j =T j max prior to surge; V R =V RRMmax E RSM non-repetitive peak reverse L = mh; T j =T j max prior to mj avalanche energy surge; inductive load switched off T stg storage temperature 65 +75 C T j junction temperature 65 +75 C 996 Oct 7
BYV ELECTRICAL CHARACTERISTICS T j =5 C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V F forward voltage I F = A; T j =T j max ; see Fig.5.78 V I F = A; see Fig.5.98 V V (BR)R reverse avalanche I R =. ma V breakdown voltage I R reverse current V R =V RRMmax ; 5 µa see Fig.8 V R =V RRMmax ; T j = 65 C; 5 µa see Fig.8 t rr reverse recovery time when switched from I F =.5 A to I R = A; measured at I R =.5 A; see Fig..5 ns C d diode capacitance f = MHz; V R = V; see Fig.9 35 pf di R -------- dt maximum slope of reverse recovery current when switched from I F = A to V R 3 V and di F /dt = A/µs; see Fig. A/µs THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT R th j-tp thermal resistance from junction to tie-point lead length = mm 46 K/W R th j-a thermal resistance from junction to ambient note K/W Note. Device mounted on an epoxy-glass printed-circuit board,.5 mm thick; thickness of Cu-layer 4 µm, see Fig.. For more information please refer to the General Part of associated Handbook. 996 Oct 7 3
BYV GRAPHICAL DATA 3 I F(AV) MGD737. I F(AV).6 MGD738..8.4 T tp ( C) T amb ( C) Switched mode application. a =.4; δ =.5; V R =V RRMmax. Switched mode application. a =.4; δ =.5; V R =V RRMmax. Device mounted as shown in Fig.. Fig. Maximum permissible average forward current as a function of tie-point temperature (including losses due to reverse leakage). Fig.3 Maximum permissible average forward current as a function of ambient temperature (including losses due to reverse leakage). 3 MGD739 6 MGD74 P (W) a = 3.5.57.4 I F 4 I F(AV) 3 V F (V) a=i F(RMS) /I F(AV) ; δ =.5; V R =V RRMmax. Fig.4 Maximum steady state power dissipation (forward plus leakage current losses, excluding switching losses) as a function of average forward current. Dotted line: T j = 75 C. Solid line: T j =5 C. Fig.5 Maximum forward voltage as a function of forward current. 996 Oct 7 4
BYV handbook, full pagewidth I FRM 6 δ =.5 MGD74. 8. 4.5 3 t p (ms) 4 T tp =8 C; R th j-tp = 46 K/W; V R =V RRMmax during δ. Fig.6 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor. 6 handbook, full pagewidth MGD74 I FRM δ =.5 8.. 4.5 3 t p (ms) 4 T amb =6 C; R th j-a = K/W; V R =V RRMmax during δ. Fig.7 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor. 996 Oct 7 5
BYV 3 MGC55 MGD743 I R (µa) C d (pf) T j ( C) V R (V) V R =V RRMmax. f = MHz; T j =5 C. Fig.8 Reverse current as a function of junction temperature; maximum values. Fig.9 Diode capacitance as a function of reverse voltage; typical values. handbook, full pagewidth DUT I F.5 trr.5 A 5 Ω.5 t.5 I R. MAM8 Rise time oscilloscope: t r ns. Turn-on time switch: t 3 ns. Fig. Test circuit and reverse recovery time waveform and definition. 996 Oct 7 6
BYV andbook, I F halfpage 5 5 di F dt 7 t rr 5 di R dt % % t I R MGC499 3 MGA Dimensions in mm. Fig. Reverse recovery definitions. Fig. Device mounted on a printed-circuit board. 996 Oct 7 7
BYV PACKAGE OUTLINE, handbook, full pagewidth k a.8 max 3.8 max 8 min 4.57 max 8 min MBC88 Dimensions in mm. The marking band indicates the cathode. Fig.3 SOD57. DEFINITIONS Data sheet status Objective specification Preliminary specification This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 34). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 996 Oct 7 8