CM400DY-24A. APPLICATION AC drive inverters & Servo controls, etc CM400DY-24A. IC...400A VCES V Insulated Type 2-elements in a pack

Similar documents
CM300DY-24A. APPLICATION AC drive inverters & Servo controls, etc CM300DY-24A. IC...300A VCES V Insulated Type 2-elements in a pack

CM1400DU-24NF. APPLICATION UPS & General purpose inverters, etc CM1400DU-24NF. IC A VCES V Insulated Type 2-elements in a pack

IC A. APPLICATION Traction drives, High Reliability Converters / Inverters, DC choppers 20± ±0.5 14±0.2 30± φ 7 MOUNTING HOLES

CM800DZB-34N HIGH POWER SWITCHING USE 4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules

Not Recommend. for New Design CM35MX-24A. APPLICATION General purpose Inverters, Servo Amplifiers CM35MX-24A

CM1500HC-66R HIGH POWER SWITCHING USE INSULATED TYPE

LABEL ± TH1(11) NTC TH2(10)

CM600HX-12A. APPLICATION General purpose Inverters, Servo Amplifiers, Power supply, etc. CM600HX-12A. IC...600A VCES...600V Single

PM75B4LA060. APPLICATION Photo voltaic power conditioner PM75B4LA060 MITSUBISHI <INTELLIGENT POWER MODULES> FLAT-BASE TYPE INSULATED PACKAGE FEATURE

PM150CLA120 PM150CLA120. APPLICATION General purpose inverter, servo drives and other motor controls PM150CLA120

DETAIL "A" #110 TAB (8 PLACES) X (4 PLACES) Y (3 PLACES) TH1 TH2 F O 1 F O 2 DETAIL "A"

CM600HG-130H HIGH POWER SWITCHING USE 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules

T C MEASURED POINT G1 E1 E2 G2 W - (4 PLACES) G2 E2 E1 G1

CM1000DUC-34SA. Mega Power Dual IGBT 1000 Amperes/1700 Volts

PM300CLA120 PM300CLA120. APPLICATION General purpose inverter, servo drives and other motor controls PM300CLA120

CM200EXS-24S. Chopper IGBT NX-Series Module 200 Amperes/1200 Volts

CM75MX-12A. APPLICATION General purpose Inverters, Servo Amplifiers CM75MX-12A

C N V (4TYP) U (5TYP) Dimensions Inches Millimeters L 0.69± ±0.25 M N P Q

PM25CLA120. APPLICATION General purpose inverter, servo drives and other motor controls PM25CLA120 MITSUBISHI <INTELLIGENT POWER MODULES>

L K K K K P P1 N GU EU GV EV GW EW GU GVGW GB E LABEL H H

MITSUBISHI ELECTRIC CORPORATION Prepared by S.Iura A S.Iura B S.Iura

C N V (4TYP) U (5TYP)

PM50CLB060. APPLICATION General purpose inverter, servo drives and other motor controls PM50CLB060 FEATURE MITSUBISHI <INTELLIGENT POWER MODULES>

PM50B6LA060 FLAT-BASE TYPE INSULATED PACKAGE

IC A. APPLICATION Traction drives, High Reliability Converters / Inverters, DC choppers 171± M8 NUTS ±0.2 ± ±0.

< HVIGBT MODULES > CM1500HC-66R. APPLICATION Traction drives, High Reliability Converters / Inverters, DC choppers CM1500HC-66R

CM75MX-12A. NX-Series CIB Module (3Ø Converter + 3Ø Inverter + Brake) 75 Amperes/600 Volts

PM200CS1D060 FLAT-BASE TYPE INSULATED PACKAGE

Technical. Application. Assembly. Availability. Pricing. Phone

Technical. Application. Assembly. Availability. Pricing. Phone

AK AJ AT AR DETAIL "A" N M L K B AB (6 PLACES) DETAIL "B" TH1 (11) TH2 (10) NTC *ALL PIN DIMENSIONS WITHIN A TOLERANCE OF ±0.5

Excellent Integrated System Limited

5SNG 0150Q Pak phase leg IGBT Module

5SNA 1500E HiPak IGBT Module

5SNA 2400E HiPak IGBT Module

5SNE 1000E HiPak Chopper IGBT Module

5SNG 0200Q Pak phase leg IGBT Module

5SNA 1000G HiPak IGBT module

Items Symbols Conditions Maximum ratings Units Collector-Emitter voltage VCES 1200 V Gate-Emitter voltage VGES ±20 V Continuous

Items Symbols Conditions Maximum ratings Units Collector-Emitter voltage VCES 1200 V Gate-Emitter voltage VGES ±20 V Continuous

Technical. Application. Assembly. Availability. Pricing. Phone

APPLICATION Traction drives, High Reliability Converters / Inverters, DC choppers CM1000HG-130XA

< HVIGBT MODULE > CMH1200DC-34S HIGH POWER SWITCHING USE SiC Hybrid HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Module

< HVIGBT MODULES > CM750HG-130R. APPLICATION Traction drives, High Reliability Converters / Inverters, DC choppers CM750HG-130R

ABB HiPak. IGBT Module 5SNA 1600N VCE = 1700 V IC = 1600 A

ABB HiPak. IGBT Module 5SNE 0800G VCE = 4500 V IC = 800 A

ABB HiPak. IGBT Module 5SNA 0800N VCE = 3300 V IC = 800 A

PM150RLA060. APPLICATION General purpose inverter, servo drives and other motor controls PM150RLA060 MITSUBISHI <INTELLIGENT POWER MODULES>

KDG25R12KE3. Symbol Description Value Units V CES Collector-Emitter Blocking Voltage 1200 V V GES Gate-Emitter Voltage ±20 V

FM600TU-3A HIGH POWER SWITCHING USE INSULATED PACKAGE

ABB HiPak. IGBT Module 5SNE 0800M VCE = 1700 V IC = 800 A

PM100RLA120. APPLICATION General purpose inverter, servo drives and other motor controls PM100RLA120 FEATURE MITSUBISHI <INTELLIGENT POWER MODULES>

FM600TU-07A HIGH POWER SWITCHING USE INSULATED PACKAGE

1200 V 600 A IGBT Module

5SNG 1000X PRELIMINARY LinPak phase leg IGBT module

FM200TU-3A HIGH POWER SWITCHING USE INSULATED PACKAGE

STARPOWER IGBT GD600SGK120C2S. General Description. Features. Typical Applications. Equivalent Circuit Schematic SEMICONDUCTOR

STARPOWER IGBT GD600HFY120C6S. General Description. Features. Typical Applications. Equivalent Circuit Schematic SEMICONDUCTOR

) unless otherwise specified Symbol Description Values Units

5SNA 1300K StakPak IGBT Module

STARPOWER IGBT GD600HFT120C2S_G8. General Description. Features. Typical Applications. Equivalent Circuit Schematic SEMICONDUCTOR

ABB HiPak TM. IGBT Module 5SNA 1200E V CE = 2500 V I C = 1200 A

D1 D2 D3 T1 T2 T3 5 D4 D5 D6 T4 T5 T6 7

STARPOWER IGBT GD450HFY120C2S. General Description. Features. Typical Applications. Equivalent Circuit Schematic SEMICONDUCTOR

STARPOWER IGBT GD300HFY120C6S. General Description. Features. Typical Applications. Equivalent Circuit Schematic SEMICONDUCTOR

Collector-Emitter voltage VCES 1200 V Gate-Emitter voltage VGES ±20 V Ic Continuous Tc=100 C 100

PM15RSH120 Intellimod Module Three Phase + Brake IGBT Inverter Output 15 Amperes/1200 Volts

PM10RSH120 Intellimod Module Three Phase + Brake IGBT Inverter Output 10 Amperes/1200 Volts

ABB HiPak TM. IGBT Module 5SNA 0800N V CE = 3300 V I C = 800 A

Collector-Emitter voltage VCES 1200 V Gate-Emitter voltage VGES ±20 V Ic Continuous Tc=100 C 75

GSID300A120S5C1 6-Pack IGBT Module

PM150RL1A120 FLAT-BASE TYPE INSULATED PACKAGE

Six-Pack XPT IGBT MIXA30W1200TED. V CES = 1200 V I C25 = 43 A V CE(sat) = 1.8 V. Part name (Marking on product) MIXA30W1200TED

STARPOWER IGBT GD25PIT120C5S. General Description. Features. Typical Applications SEMICONDUCTOR. Molding Type Module. 1200V/25A PIM in one-package

GSID075A060B1A4. Preliminary Data Sheet GSID075A060B1A4. IGBT Module. Features: Application:

STGWA40HP65FB2. Trench gate field-stop, 650 V, 40 A, high-speed HB2 series IGBT in a TO-247 long leads package. Datasheet. Features.

Converter - Brake - Inverter Module NPT IGBT

STARPOWER IGBT GD25FST120L2S_G8. General Description. Features. Typical Applications. Equivalent Circuit Schematic SEMICONDUCTOR

n-channel Solar Inverter Induction Heating G C E Gate Collector Emitter

STARPOWER IGBT GD1000HFL170P2S. General Description. Features. Typical Applications SEMICONDUCTOR. Molding Type Module. 1700V/1000A 2 in one-package

Converter - Brake - Inverter Module XPT IGBT

Converter - Brake - Inverter Module XPT IGBT

STARPOWER IGBT GD30PJT60L2S. General Description. Features. Typical Applications. Equivalent Circuit Schematic SEMICONDUCTOR

Collector-Emitter voltage VCES 600 V Gate-Emitter voltage VGES ±20 V Ic Continuous Tc=80 C 100

STARPOWER IGBT GD25FSY120L2S. General Description. Features. Typical Applications. Equivalent Circuit Schematic SEMICONDUCTOR

Target Specification (Tentative)

Converter - Inverter Module NPT IGBT

10 23, 24 21, 22 19, , 14

V (4TYP) U (5TYP) L 0.69± ±0.25 M N P Q R S M6 Metric M6 T 0.63 Min Min.

20MT120UF "FULL-BRIDGE" IGBT MTP. UltraFast NPT IGBT V CES = 1200V I C = 40A T C = 25 C. 5/ I27124 rev. D 02/03. Features.

Converter - Brake - Inverter Module (CBI 1) Trench IGBT

W - DIA. (4 TYP.) AE AG AH AJ R

U N V VPC G F V WPI W FO 12. UP U FO VP V FO V VPI GND GND IN GND GND IN V CC. Dimensions Inches Millimeters N

Absolute Maximum Ratings Parameter Max. Units

Collector-Emitter voltage VCES 600 V Gate-Emitter voltage VGES ±20 V Ic Continuous Tc=80 C 75

IRGB30B60KPbF IRGS30B60KPbF IRGSL30B60KPbF

X (11 PLACES) TERMINAL CODE 1 SUP 2 SVP 3 SWP 4 SUN 5 SVN 6 SWN 7 GUP 8 GVP 9 GWP 10 GUN (13) 11 GVN 12 GWN 13 TH1 14 TH2 (14)

=25 C Avalanche Energy, single pulse 65 I C. C Soldering Temperature, for 10 seconds 300, (0.063 in. (1.6mm) from case)

Six-Pack XPT IGBT MIXA80W1200TEH V CES I C25 = 1200 V. Part name (Marking on product) MIXA80W1200TEH

IRGP30B60KD-EP V CES = 600V I C = 30A, T C =100 C. t sc > 10µs, T J =150 C. V CE(on) typ. = 1.95V. Absolute Maximum Ratings. Thermal Resistance

Transcription:

CM00DY-A CM00DY-A IC...00A CES... 0 Insulated Type -elements in a pack APPLICATION AC drive inverters & Servo controls, etc OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 9±0. G 80 6±0. CE E C G E E 6 6 0 (0.) -M6 NUTS. -φ6. MOUNTING HOLES SCREWING DEPTH 8 8 8 TAB #. t=0. E G 9 +.0 0. LABEL 8.. CE E C G E CIRCUIT DIAGRAM Feb. 009

CM00DY-A ABSOLUTE MAXIMUM RATINGS (Tj = C, unless otherwise specified) Symbol CES GES IC ICM IE (Note ) IEM (Note ) PC (Note ) Tj Tstg iso Parameter Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Maximum collector dissipation Junction temperature Storage temperature Isolation voltage Torque strength Weight Conditions G-E Short C-E Short DC, TC = 8 C * Pulse (Note ) Pulse (Note ) TC = C * Terminals to base plate, f = 60Hz, AC minute Main terminals M6 screw Mounting M6 screw Typical value Ratings 0 ±0 00 00 0 ~ + 0 ~ + 00. ~.. ~. 80 Unit A A W C C rms N m g ELECTRICAL CHARACTERISTICS (Tj = C, unless otherwise specified) * * Symbol Parameter Test conditions ICES Collector cutoff current Gate-emitter threshold CE = CES, GE = 0 GE(th) voltage IC = 0mA, CE = IGES Gate leakage current ±GE = GES, CE = 0 Collector-emitter saturation CE(sat) voltage IC = 00A, GE = Cies Input capacitance CE = Coes Output capacitance GE = 0 Cres Reverse transfer capacitance QG Total gate charge, IC = 00A, GE = td(on) Turn-on delay time tr Turn-on rise time, IC = 00A td(off) Turn-off delay time GE = ± tf Turn-off fall time RG = 0.8Ω, trr (Note ) Reverse recovery time IE = 00A Qrr (Note ) Reverse recovery charge EC(Note ) Emitter-collector voltage Rth(j-c)Q Rth(j-c)R Thermal resistance Rth(c-f) Contact thermal resistance RG External gate resistance : Case temperature (TC), heat sink temperature (Tf) measured point is just under the chips. : Typical value is measured by using thermally conductive grease of λ = 0.9[W/(m K)]. Tj = C Tj = C IE = 00A, GE = 0 IGBT part (/ module) * FWDi part (/ module) * Case to heat sink, Thermal compound Applied (/ module) * Note. IE, EC, trr & Qrr represent characteristics of the anti-parallel, emitter-collector free-wheel diode (FWDi).. Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tjmax rating.. Junction temperature (Tj) should not increase beyond C. Min. 0.8 Limits Typ... 000 6 0.0 Max. 0..0 0 6. 0 80 600 0 0.8 0.06 0.08 Unit ma 6 8 µa nf nc ns ns µc K/W Ω Feb. 009

CM00DY-A PERFORMANCE CURES 00 600 00 00 00 OUTPUT CHARACTERISTICS GE = 0 Tj = C 00 0 9 0 0 6 8 COLLECTOR-EMITTER OLTAGE CE () COLLECTOR EMITTER SATURATION OLTAGE CE (sat) () COLLECTOR-EMITTER SATURATION OLTAGE CHARACTERISTICS GE = Tj = C Tj = C 0 0 0 00 00 00 00 600 00 COLLECTOR-EMITTER SATURATION OLTAGE CE (sat) () 8 6 COLLECTOR-EMITTER SATURATION OLTAGE CHARACTERISTICS Tj = C IC = A IC = 00A IC = 60A 0 6 8 6 8 0 FREE-WHEEL DIODE FORWARD CHARACTERISTICS Tj = C Tj = C 0 GATE-EMITTER OLTAGE GE () EMITTER-COLLECTOR OLTAGE EC () CAPACITANCE Cies, Coes, Cres (nf) CAPACITANCE CE CHARACTERISTICS Cies Coes Cres GE = 0 SWITCHING TIME (ns) HALF-BRIDGE SWITCHING CHARACTERISTICS td(off) tf td(on) tr GE = ± RG = 0.8Ω Tj = C COLLECTOR-EMITTER OLTAGE CE () Feb. 009

CM00DY-A REERSE RECOERY TIME trr (ns) REERSE RECOERY CURRENT lrr (A) REERSE RECOERY CHARACTERISTICS OF FREE-WHEEL DIODE Irr trr GE = ± RG = 0.8Ω Tj = C NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth (j c ) (ratio) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT part & FWDi part) Single Pulse TC = C Under the chip IGBT part: Per unit base = Rth(j c) = 0.06K/W FWDi part: Per unit base = Rth(j c) = 0.08K/W TIME (s) SWITCHING LOSS (mj/pulse) SWITCHING LOSS vs. COLLECTOR CURRENT Esw(off) Esw(on) GE = ± RG = 0.8Ω Tj = C SWITCHING LOSS (mj/pulse) SWITCHING LOSS vs. GATE RESISTANCE GE = ± IC = 00A Tj = C Esw(on) Esw(off) GATE RESISTANCE RG (Ω) RECOERY LOSS (mj/pulse) RECOERY LOSS vs. IE Err GE = ± RG = 0.8Ω Tj = C RECOERY LOSS (mj/pulse) RECOERY LOSS vs. GATE RESISTANCE Err GE = ± IE = 00A Tj = C GATE RESISTANCE RG (Ω) Feb. 009

CM00DY-A GATE-EMITTER OLTAGE GE () GATE CHARGE CHARACTERISTICS 0 IC = 00A 6 8 CC = 00 0 0 00 00 0 000 00 000 GATE CHARGE QG (nc) Feb. 009