Influence of hyperfine interaction on optical orientation in self-assembled InAs/GaAs quantum dots

Similar documents
Nuclear spins in semiconductor quantum dots. Alexander Tartakovskii University of Sheffield, UK

Hole - Nuclear Spin Interaction in Quantum Dots

Supplementary Information

Quantum Optics with Mesoscopic Systems II

Electron spins in nonmagnetic semiconductors

Deterministic Coherent Writing and Control of the Dark Exciton Spin using Short Single Optical Pulses

interband transitions in semiconductors M. Fox, Optical Properties of Solids, Oxford Master Series in Condensed Matter Physics

Defense Technical Information Center Compilation Part Notice

doi: /PhysRevB

Spin dynamics and exchange interaction in semiconductor quantum dots

Electrical Control of Single Spins in Semiconductor Quantum Dots Jason Petta Physics Department, Princeton University

Spin Lifetime Measurements in MBE-Grown GaAs Epilayers

Contents. List of contributors Preface. Part I Nanostructure design and structural properties of epitaxially grown quantum dots and nanowires 1

Optical Manipulation of an Electron Spin in Quantum Dots

Supplementary Figure 1: Spin noise spectra of 55 Mn in bulk sample at BL =10.5 mt, before subtraction of the zero-frequency line. a, Contour plot of

Lecture 8, April 12, 2017

Polariton laser in micropillar cavities

arxiv: v1 [cond-mat.mes-hall] 15 Jun 2012

Magnetic control of valley pseudospin in monolayer WSe 2

Using Light to Prepare and Probe an Electron Spin in a Quantum Dot

Introduction. Resonant Cooling of Nuclear Spins in Quantum Dots

Supplementary Figure 1: Reflectivity under continuous wave excitation.

Charge noise and spin noise in a semiconductor quantum device

arxiv: v1 [cond-mat.mes-hall] 26 Aug 2010

Supported by NSF and ARL

Optical Control of Coherent Interactions between Electron Spins in InGaAs Quantum Dots

Nondestructive Optical Measurements of a Single Electron Spin in a Quantum Dot

Lecture 2: Double quantum dots

Quantum optics with multi-level transitions in semiconductor quantum dots

Quantum Information Processing and Nuclear Spins in Nanostructures

Polarized fine structure in the photoluminescence excitation spectrum of a negatively charged quantum dot

Electromagnetically Induced Transparency (EIT) via Spin Coherences in Semiconductor

SUPPLEMENTARY INFORMATION

Quantum Confinement in Graphene

Lecture2: Quantum Decoherence and Maxwell Angels L. J. Sham, University of California San Diego

Resonantly Excited Time-Resolved Photoluminescence Study of Self-Organized InGaAs/GaAs Quantum Dots

Electrically Driven Polariton Devices

SUPPLEMENTARY INFORMATION

arxiv: v2 [cond-mat.mes-hall] 6 Apr 2011

Electron and Nuclear Spin Interactions in the Optical Spectra of Single GaAs Quantum Dots

A STUDY OF DYNAMIC CHARACTERIZATIONS OF GaAs/ALGaAs SELF-ASSEMBLED QUANTUM DOT LASERS

SUPPLEMENTARY INFORMATION

Different ion-qubit choises. - One electron in the valence shell; Alkali like 2 S 1/2 ground state.

Ultrafast optical rotations of electron spins in quantum dots. St. Petersburg, Russia

Solid-state quantum communications and quantum computation based on single quantum-dot spin in optical microcavities

Coherence and optical electron spin rotation in a quantum dot. Sophia Economou NRL. L. J. Sham, UCSD R-B Liu, CUHK Duncan Steel + students, U Michigan

Valley Zeeman Effect of free and bound excitons in WSe2

Nuclear spin spectroscopy for semiconductor hetero and nano structures

Femtosecond Spectral Hole Burning Spectroscopy as a Probe of Exciton Dynamics in Quantum Dots

Photonic devices for quantum information processing:

Quantum Information Processing with Semiconductor Quantum Dots

Self-assembled SiGe single hole transistors

Semiclassical limit and longtime asymptotics of the central spin problem. Gang Chen Doron Bergman Leon Balents

Fermi polaron-polaritons in MoSe 2

Spin Dynamics in Single GaAs Nanowires

Supplementary Materials

Spin Transport in III-V Semiconductor Structures

Femtosecond nonlinear coherence spectroscopy of carrier dynamics in porous silicon

Part I. Nanostructure design and structural properties of epitaxially grown quantum dots and nanowires

All optical quantum computation by engineering semiconductor. macroatoms. Irene D Amico. Dept. of Physics, University of York

arxiv: v1 [cond-mat.mtrl-sci] 13 Sep 2013

Spins and spin-orbit coupling in semiconductors, metals, and nanostructures

Quantum Information Processing with Semiconductor Quantum Dots. slides courtesy of Lieven Vandersypen, TU Delft

Three-Dimensional Silicon-Germanium Nanostructures for Light Emitters and On-Chip Optical. Interconnects

Columnar quantum dots (QD) in polarization insensitive SOA and non-radiative Auger processes in QD: a theoretical study

Optical Investigation of the Localization Effect in the Quantum Well Structures

Supplementary Figure 1 Level structure of a doubly charged QDM (a) PL bias map acquired under 90 nw non-resonant excitation at 860 nm.

collaboration D. G. Austing (NTT BRL, moved to NRC) Y. Tokura (NTT BRL) Y. Hirayama (NTT BRL, CREST-JST) S. Tarucha (Univ. of Tokyo, NTT BRL,

P-shell carriers assisted dynamic nuclear spin polarization in single. quantum dots at zero external magnetic field

tunneling theory of few interacting atoms in a trap

Quantum Computing with neutral atoms and artificial ions

ATOMIC AND LASER SPECTROSCOPY

Nuclear Spin Effects in Semiconductor Quantum Dots

Spectroscopy of self-assembled quantum rings

Widely Tunable and Intense Mid-Infrared PL Emission from Epitaxial Pb(Sr)Te Quantum Dots in a CdTe Matrix

Optical Properties of Manganese-Doped Individual CdTe Quantum Dots

SUPPLEMENTARY INFORMATION

Physics of Semiconductors (Problems for report)

Optical Orientation of Excitons in CdSe Self-Assembled Quantum Dots

Kondo effect in multi-level and multi-valley quantum dots. Mikio Eto Faculty of Science and Technology, Keio University, Japan

Spin relaxation in low-dimensional systems

LIST OF TOPICS BASIC LASER PHYSICS. Preface xiii Units and Notation xv List of Symbols xvii

GeSi Quantum Dot Superlattices

Single Photon Generation & Application

Measuring Spin-Lattice Relaxation Time


Vortices and superfluidity

Hydrodynamic solitons in polariton superfluids

InAs Quantum Dots for Quantum Information Processing

Quantum computation and quantum information

Electronic and Optoelectronic Properties of Semiconductor Structures

Optically oriented and detected electron spin resonance in a lightly doped n-gaas layer

University of Louisville - Department of Chemistry, Louisville, KY; 2. University of Louisville Conn Center for renewable energy, Louisville, KY; 3

Semiconductor Quantum Dots

Saroj P. Dash. Chalmers University of Technology. Göteborg, Sweden. Microtechnology and Nanoscience-MC2

Mn in GaAs: from a single impurity to ferromagnetic layers

+ - Indirect excitons. Exciton: bound pair of an electron and a hole.

Enhancement of the electron spin memory by localization on donors in a quantum well

Photonic Crystal Nanocavities for Efficient Light Confinement and Emission

Multidimensional femtosecond coherence spectroscopy for study of the carrier dynamics in photonics materials

Transcription:

Influence of hyperfine interaction on optical orientation in self-assembled InAs/GaAs quantum dots O. Krebs, B. Eble (PhD), S. Laurent (PhD), K. Kowalik (PhD) A. Kudelski, A. Lemaître, and P. Voisin Laboratoire de Photonique et de Nanostructures- CNRS, Marcoussis, France P.-F. Braun (PhD), B. Urbaszek, L. Lombez (PhD), P. Renucci J.-L. Gauffier, X. Marie and T. Amand Laboratoire de Nanophysique, Magnétisme et Optoélectronique (LNMO), INSA Toulouse, France LNMO FRISNO 9, Les Houches 11-16 February 2007

Motivations General framework : using the spin degree of freedom of electrons for «quantum computation» in condensed matter. D. Loss and D.P. DiVincenzo et al., PRA57, 120 (1998) «Quantum computation with quantum dots» A quantum gate in condensed matter We still need to identify all the mechanisms influencing electron spin dynamics in actual semiconductor QD s. J.R. Peta et al., Science 309, 2180 (2005) Optical orientation is a very efficient technique to address this issue.

Outline Introduction : electron spin in InAs QD s Optical orientation of trions Role of the hyperfine interaction Conclusion

Self-assembled InAs/GaAs quantum dots 1 µm Molecular Beam Epitaxy of InAs / GaAs 7% lattice mismatch formation of «islands» Lens-shaped QDs after capping with GaAs Growth axis (AFM image, LPN) GaAs ~20 nm InAs ~ 4 nm Wetting Layer

Electron spin in InAs quantum dot Spin-orbit effect : no spin-splitting of the discrete states (Kramers s degeneracy) P e 50 mev Theory : Khaetskii et al., PRB64, 125316 (2000) T 1 ~ 1 µs Experiments : Kroutvar et al., Nature 432,81 (2004) for magnetic field above 4T. S e B z Strong exchange interaction between confined carriers Hyperfine interaction with a «frozen» configuration of nuclear spins Merkulov et al., PRB65, 205309 (2002) : T 1* ~ 1 ns in zero-magnetic field.

Electron-hole exchange : fine structure of neutral excitons [-110] D 2d [110] [-110] C 2v [110] 70µeV splitting Bright ±1 x = + 1 + 1 2 X 0 X + X 0 y = + 1 1 i 2 2X 0 Dark ± 2 Trions are required for optical orientation of electron spin in weak magnetic fields (<1 T)

No fine structure for trion ground state H = ( a X e h α= x, y, z α J α + b α J 3 α Negative trion X - ) ( σ (1) α + σ 0 (2) α ) Positive trion X + σ + σ + Circular polarization of PL emitted by trions monitors the spin-state of the unpaired carrier.

Optical selection rules in InAs/GaAs quantum dots (i) Spin-orbit interaction couples spin to orbital angular momentum (ii) Anisotropic confinement + biaxial strain in InAs QD s : Conduction Band Excitation λ~900 nm + σ VB ground state is a pure heavy-hole with J z = ±3/2 ψ ψ e ( r e ) S σ J z = ± PL 1 2 h ( r h ) ( X ± iy ) σ J z = ± 3 2 1 2 + 3 2 J + J = e z + σ h z J photon z + 1 2 3 2 σ Valence Band «pure» selection rules

Outline Introduction : electron spin in InAs QD s Optical orientation of trions Role of the hyperfine interaction with the nuclei Conclusion

Charge-tunable structures InAs quantum dots 0.8 ev Schottky barrier 1 µm 5 nm NiCr n-gaas ev g GaAs 20 nm Ga 0.7 Al 0.3 As 100 nm GaAs 30 nm GaAs 25nm n-gaas 200nm GaAs This structure allows for the control of : (i) excess electron(s) under forward bias (ii) excess hole(s) under reverse bias by optical charging

µ-pl map of a single QD PL energy depends on the charge due to Coulomb interaction. T=5K E X X 0 6 mev X + X +* X + * X + S e S h P h S e S h P h Γ Lorentzian fit

Optical orientation set-up N liq. cooled CCD Double-Spectrometer Grating :1200 g/mm Focal length : 0.6 m Resolution : 25 µev (20pm) Excitation : σ + Detection : σ + or σ - Polarization : P = I I σ + σ + Analyzer + I I σ σ λ 4 Polarization-unsensitive beam-splitter He Liq. flux cryostat (T sample ~5 K) λ 4 Glan Polarizer x 50 cw Ti:Sa Laser

Spin relaxation in a longitudinal magnetic field B z? Linearly polarized excitation Measurement of PL circular polarization Exc. 1.34 ev, Det. 1.27 ev Polarization 0.2 Vg=1.1 V 0.1 0-0.1 t spin=5.15 p0=- 0.0231-4 - 2 0 2 4 Magnetic FieldHTL QD ensemble PL polarization Spin lifetime of hole, exciton and electron >> than radiative lifetime (1ns)

Optical orientation of an ensemble of QD s : Under σ+ polarized excitation : PL circular polarization of a QD ensemble Exc. 1.34 ev, Det. 1.27 ev Excitation Energy 2D continuum P-P S-S σ + - Fidelity of spin orientation above 75 % for X - trions even in B=0T - A longitudinal magnetic field enhances optical orientation of X + 0

Spin dynamics in zero magnetic field X + X 0 X 0 & X - X - X 2-, X 3-, τ hole spin > 20 ns S. Laurent et al., PRL94, 147401 (2005) Time-resolved PL of a QD ensemble after a ps excitation pulse (streak camera) ThedifferencebetweenX + and X- spin dynamics points toward the hyperfine interaction as a source of spin relaxation for conduction electrons (X + )

Outline Introduction : electron spin in InAs QD s Optical orientation of trions Role of the hyperfine interaction Conclusion

Hyperfine interaction for an ensemble of InAs QD s z N nuclei with spin In (9/2) As (3/2) (I.A. Merkulov et al., PRB65, 205309 (2002)) Inhomogeneous spin dephasing in the time T due to Larmor precession about randomly oriented nuclear fields B 1 B 2 S 0

Non-resonant σ+ excitation GaAs 30 nm GaAs 30 nm GaAs 30 nm GaAs buffer Be δ-doping Observation of spin dephasing in p-doped QD s Circular Polarization (%) 80 40 20 P.-F. Braun et al., Phys. Rev. Lett. 94, 116601 (2005) T = 10 K X + B z =400 mt B z =100 mt B z =0 Intensity B z =400m T 0 800 1600 Time (ps) 10 0 1000 2000 Time (ps) B=0 T : Two regimes : Decay : ~ 700 ps Polarization plateau B>0.1 T : Screening of the ~30 mt fluctuations of nuclear «magnetic field» Yet, we observe polarization above theoretical value ( 53%) for X+ in a single QD I + I -

Spin relaxation causes Dynamic Nuclear Polarization (DNP) electron-nuclei flip-flop Overhauser shift Transfer of angular momentum to the nuclei spins S e 2 requirements : Screening dipolar interaction between nuclei (T 2 =10-4 s) external magnetic field along z ( 1 mt) Pumping the QD with spin polarized electrons along z δ n 300µeV for 100% polarization

Overhauser-shift of X + and X - in a small magnetic field QD magnet (i) 0.2 T magnetic field // z (ii) Optical orientation under intradot excitation (1.31 ev) P~70% σ- σ+ P~70% B.Eble et al., Phys. Rev. B 74, 081306(R) (2006) Evidence of spin transfer from the electron in the QD to the QD nuclei

Dynamic nuclear polarization in a magnetic field B z (1) Stationnary Hamiltonian of hyperfine interaction : The flip-flop term is a random perturbation between states split in energy by ħω e. Its time dependence is characterized by a correlation time τ c Competition between the total splitting ħω e and the level broadening ħ/τ c.

Dynamic nuclear polarization in a magnetic field B z (2) Time-dependent perturbation theory (A. Abragam, 1961) Rate equation for <I z > The rate of nuclear polarization depends on the nuclear polarization! T d = depolarization time of the nuclei (dipole-dipole or quadrupolar) Implicit equation for the equilibrium nuclear polarization : Asymmetry in B z or S z, nonlinearity and possibly bistability.

Assymmetrical dependence of DNP on the field : Fixed σ+ excitation B n B z B n B z -200 0 200 Polarizing the nuclei is more difficult in the direction which increases the total electron spin-splitting

Dependence of DNP on the electron spin polarization <S z > Excitation polarization is varied step by step from σ+ to σ- <S z > and δ n are both measured (See also C.W Lai et al., PRL 96, 167403 (2006)) This explains the strong polarization (>70%) of X+ observed under steady excitation (see also A.Ebbens et al., PRB72, 073307 (2005)).

Bistability of the Nuclear Polarization Vs electron spin polarization Theory B z B n Unstable solution P.-F. Braun et al., Phys. Rev. B 74, 245306 (2006) B z B n See also : A.I. Tartakovskii, et al., PRL 98, 026806 (2007) (Sheffied University) P. Maletinsky, et al. Phys. Rev. B 75, 035409 (2007) (ETH Zurich)

Optical orientation of a single X+ state in zero nuclear field σ+/σ- excitation modulated at 50 khz with time-gated detection. σ σ + σ σ + theoretical fit Regime of spin relaxation in the randomly oriented nuclear field B n I.A. Merkulov et al., PRB65, 205309 (2002))

Electron spin - nuclear spins : a strongly coupled system Circular polarization of a QD ensemble Exc. σ+ 1.34 ev, Det.1.27 ev

Summary Trion states allow the optical orientation of a single electron or hole spin Demonstration of electron spin dephasing due to the hyperfine interaction with nuclei A small magnetic field (100mT) can screen this effect but dynamic nuclear polarization occurs (even in zero field) and contributes to the spin dynamics!