CoolMOS Power Transistor Product Summary V DS 6 V R DS(on),max.45 Ω Features Q g,typ 15 nc Worldwide best R ds,on in TO247 Ultra low gate charge Extreme dv/dt rated PG-TO247-3 High peak current capability Automotive AEC Q11 qualified Green package (RoHS compliant) CoolMOS CPA is specially designed for: DC/DC converters for Automotive Applications Type Package Marking IPW6R45CPA PG-TO247-3 6R45A Maximum ratings, at T j =25 C, unless otherwise specified Parameter Symbol Conditions Value Unit Continuous drain current I D T C =25 C 6 A T C =1 C Pulsed drain current 1) I D,pulse T C =25 C 38 23 Avalanche energy, single pulse E AS I D =11 A, V DD =5 V 195 mj Avalanche energy, repetitive t AR 1),2) E AR I D =11 A, V DD =5 V 3 1),2) Avalanche current, repetitive t AR I AR 11 A MOSFET dv /dt ruggedness dv /dt V DS =...48 V 5 V/ns Gate source voltage V GS static ±2 V Power dissipation P tot T C =25 C 431 W Operating temperature T j -4... 15 C Storage temperature T stg -4... 15 Mounting torque M3 and M3.5 screws 6 Ncm Rev. 2. page 1 21-2-15
Maximum ratings, at T j =25 C, unless otherwise specified Parameter Symbol Conditions Value Unit Continuous diode forward current I S T C =25 C 44 A Diode pulse current 1) I S,pulse 23 Reverse diode dv /dt 3) dv /dt 15 V/ns Parameter Symbol Conditions Values Unit min. typ. max. Thermal characteristics Thermal resistance, junction - case R thjc - -.29 K/W Thermal resistance, junction - ambient R thja leaded - - 62 Soldering temperature, wavesoldering only allowed at leads T sold 1.6 mm (.63 in.) from case for 1 s - - 26 C Electrical characteristics, at T j =25 C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS = V, I D =25 µa 6 - - V Gate threshold voltage V GS(th) V DS =V GS, I D =3 ma 2.5 3 3.5 Zero gate voltage drain current I DSS V DS =6 V, V GS = V, T j =25 C - - 1 µa Gate-source leakage current I GSS V GS =2 V, V DS = V - - 1 na Drain-source on-state resistance R DS(on) V GS =1 V, I D =44 A, T j =25 C V GS =1 V, I D =44 A, T j =15 C -.4.45 Ω -.11 - Gate resistance R G f =1 MHz, open drain - 1.3 - Ω Rev. 2. page 2 21-2-15
Parameter Symbol Conditions Values Unit Dynamic characteristics min. typ. max. Input capacitance C iss V GS = V, V DS =1 V, - 68 - pf Output capacitance C oss f =1 MHz - 32 - Effective output capacitance, energy related 4) C o(er) V GS = V, V DS = V - 31 - to 48 V Effective output capacitance, time related 5) C o(tr) - 82 - Turn-on delay time t d(on) - 3 - ns Rise time t r V DD =4 V, V GS =1 V, I D =44 A, - 2 - Turn-off delay time t d(off) R G =3.3 Ω - 1 - Fall time t f - 1 - Gate Charge Characteristics Gate to source charge Q gs - 34 - nc Gate to drain charge Q gd V DD =4 V, I D =44 A, - 51 - Gate charge total Q g V GS = to 1 V - 15 19 Gate plateau voltage V plateau - 5. - V Reverse Diode Diode forward voltage V SD V GS = V, I F =44 A, T j =25 C -.9 1.2 V Reverse recovery time t rr - 6 - ns Reverse recovery charge Q rr V R =4 V, I F =I S, di F /dt =1 A/µs - 17 - µc Peak reverse recovery current I rrm - 6 - A 1) Pulse width t p limited by T j,max 2) Repetitive avalanche causes additional power losses that can be calculated as P AV =E AR *f. 3) I SD I D, di /dt 1A/µs,V DClink = 4V, V peak <V (BR)DSS, T j <T jmax, identical low side and high side switch 4) C o(er) is a fixed capacitance that gives the same stored energy as C oss while V DS is rising from to 8% V DSS. 5) C o(tr) is a fixed capacitance that gives the same charging time as C oss while V DS is rising from to 8% V DSS. Rev. 2. page 3 21-2-15
1 Power dissipation 2 Safe operating area P tot =f(t C ) I D =f(v DS ); T C =25 C; D = parameter: t p 5 1 3 4 3 1 2 limited by on-state resistance 1 µs 1 µs µs P tot [W] I D [A] 1 ms 2 1 1 DC 1 ms 1 4 8 12 16 T C [ C] 1 1 1 1 V DS [V] 1 2 1 3 3 Max. transient thermal impedance 4 Typ. output characteristics Z (thjc) =f(t p ) I D =f(v DS ); T j =25 C parameter: D=t p /T parameter: V GS 1 25 2 V 1 V 8 V.5 2 7 V Z thjc [K/W] 1-1.2.1.5.2 I D [A] 15 1 6 V 1-2.1 5.5 V single pulse 5 5 V 4.5 V 1-3 1-5 1-4 1-3 t p [s] 1-2 1-1 1 5 1 15 2 V DS [V] Rev. 2. page 4 21-2-15
5 Typ. output characteristics 6 Typ. drain-source on-state resistance I D =f(v DS ); T j =15 C R DS(on) =f(i D ); T j =15 C IPW6R45CPA parameter: V GS parameter: V GS 14 8 V.16 12 1 2 V 1 V 7 V 5 V 5.5 V 6 V 5.5 V.12 6 V 6.5 V 7 V I D [A] 8 6 5 V R DS(on) [Ω].8 2 V 4 4.5 V.4 2 5 1 15 2 V DS [V] 2 4 6 8 1 I D [A] 7 Drain-source on-state resistance 8 Typ. transfer characteristics R DS(on) =f(t j ); I D =44 A; V GS =1 V I D =f(v GS ); V DS >2 I D R DS(on)max parameter: T j.12 32.1 28 25 C 24.8 2 R DS(on) [Ω].6.4 98 % typ I D [A] 16 12 15 C 8.2 4-6 -2 2 6 1 14 18 T j [ C] 2 4 6 8 1 V GS [V] Rev. 2. page 5 21-2-15
9 Typ. gate charge 1 Forward characteristics of reverse diode V GS =f(q gate ); I D =44 A pulsed I F =f(v SD ) parameter: V DD 1 parameter: T j 1 3 8 12 V 6 4 V 1 2 15 C 25 C 15 C, 98% V GS [V] I F [A] 4 1 1 25 C, 98% 2 5 1 15 Q gate [nc] 1.5 1 1.5 2 V SD [V] 11 Avalanche energy 12 Drain-source breakdown voltage E AS =f(t j ); I D =11 A; V DD =5 V V BR(DSS) =f(t j ); I D =.25 ma 2 7 15 66 E AS [mj] 1 V BR(DSS) [V] 62 5 58 25 75 125 175 54-6 -2 2 6 1 14 18 T j [ C] T j [ C] Rev. 2. page 6 21-2-15
13 Typ. capacitances 14 Typ. Coss stored energy C =f(v DS ); V GS = V; f =1 MHz E oss = f(v DS ) 1 5 5 1 4 Ciss 4 1 3 3 C [pf] 1 2 Coss E oss [µj] 2 1 1 Crss 1 1 1 2 3 4 5 V DS [V] 1 2 3 4 5 6 V DS [V] Rev. 2. page 7 21-2-15
Definition of diode switching characteristics Rev. 2. page 8 21-2-15
PG-TO-247-3: Outlines Rev. 2. page 9 21-2-15
Published by Infineon Technologies AG 81726 Munich, Germany 21 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics ( Beschaffenheitsgarantie ). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 2. page 1 21-2-15
NOTIFICATION N 4/1 Information on N-Channel MOSFET products designed for automotive applications Products affected: SalesName Package IPB6R99CPA IPB6R199CPA IPB6R299CPA IPC6R75CPA IPI6R99CPA IPP6R99CPA IPW6R45CPA IPW6R75CPA IPW6R99CPA PG-TO263-3-2 PG-TO263-3-2 PG-TO263-3-2 Bare Die PG-TO262-3-1 PG-TO22-3-1 PG-TO247-3-41 PG-TO247-3-41 PG-TO247-3-41 Dear Customer, The devices listed for this notification are sensitive to hard commutation of the conducting body diode. This operating condition can occur in half-bridge configurations used in ZVS phase shift and resonant switching PWM converters. Using the device under such conditions may result in violation of the datasheet specification limits and may lead to permanent damage of the device. Please take care that in the context of the application described above the datasheet limits are not exceeded. Best Regards Michael Paulu If you have any questions, please do not hesitate to contact your local Sales office. 21-5-12 Page 1 of 1
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