Study of Average Coordination Number Using Topological Concept in Ge-In-Se Glasses

Similar documents
Atomic Density versus Average Coordination Number in Ge±In±Se Glasses

Effect of decrease in chalcogen content on some physical parameters of Ge 14 Bi x Se 76-x Te 10 Glasses due to variation in Bi content

INTERNATIONAL CENTRE FOR THEORETICAL PHYSICS

MIT International Journal of Electronics and Communication Engineering Vol. 3, No. 1, Jan. 2013, pp

Local order in Ge10Sb30S60 glass

ATOMIC SCALE STRUCTURE OF Ge 30 As 4 S 66

Structure 1. Glass formation in chalcogenide system Structure models

Thermal diffusion near glass transition in Ge-Se glasses measured by photoacoustics

Scholars Research Library. Optical properties of Ge-Se-In Amorphous Composites

Structure 1. Glass formation in chalcogenide system Structural models

EXTENDED X-RAY ABSORPTION FINE STRUCTURE STUDY ON Bi MODIFIED GeS BULK GLASSES

Abdelhamid Badaoui 1*,Maamar Belhadji 1,2

FURTHER MEYER-NELDEL RULE IN a-se 70 Te 30-x Zn x THIN FILMS

Effect of Composition and Thickness on the Electrical Behavior of Ge-Se- Sb-Te Amorphous Films

The bulk modulus of covalent random networks

PHYSICAL AGEING EFFECT IN Se 75 Te 20 In 5 CHALCOGENIDE GLASS

Role of Ge incorporation in the physical and dielectric properties of Se 75 Te 25 and Se 85 Te 15 glassy alloys

Compositional Trends of the Optical Properties in Chalcogenide Ge-Se-Ag Glasses

PHOTOCURRENT RELAXATION IN As x Se 1-x THIN FILMS: COMPOSITIONAL DEPENDENCE

Thermal stability and percolation threshold of Ge-Se-Fe glasses

WHAT ARE THE PARAMETERS THAT GLASS TRANSITION TEMPERATURE OF CHALCOGENIDE GLASSES DEPEND ON? AN OVERVIEW

Thermal stability and percolation threshold of Ge Se Fe glasses

Statistical aspects of electronic and structural properties in partially ordered semiconductor alloys

Effect of composition on optical properties of GeSe 3 Sb 2 Se 3 ZnSe thin films

5. STRUCTURES AND DEFECTS IN AMORPHOUS SOLIDS

Lecture 1. OUTLINE Basic Semiconductor Physics. Reading: Chapter 2.1. Semiconductors Intrinsic (undoped) silicon Doping Carrier concentrations

DIELECTRIC AND AC CONDUCTION STUDIES OF LEAD PHTHALOCYANINE THIN FILM

Growth and thermal transport properties of some ternary Thallium Dichalcogenide semiconductor compounds.

Photoconductivity of Se 90-x Te 10 Zn x thin films

ECE 335: Electronic Engineering Lecture 2: Semiconductors

Acoustic study of nano-crystal embedded PbO P 2 O 5 glass

T=293 K is shown in Fig. 1. The figure shows that in. Crystalline fragments in glasses ' ' PHYSICAL REVIEW B VOLUME 45, NUMBER 13

Observation of nanosecond light induced thermally tunable transient dual absorption bands in a-ge 5 As 30 Se 65 thin film

Re-writable DVDs: what makes phase-change materials work the way they do

Dielectric Relaxation in Cd x InSe 9-x Chalcogenide Thin Films

The Influence of Silver content on the Optical and Other Physical Properties of Ge-Se Glass System

Fragility of Ge 40 S 60 Glass Forming Liquid

EE495/695 Introduction to Semiconductors I. Y. Baghzouz ECE Department UNLV

Dielectric properties of glassy Se80Te20 and Se 80Te10M10 (M = Cd, In and Sb)

12. Spectral diffusion

Dielectric behaviour and a.c. conductivity in Cu x Fe 3 x O 4 ferrite

Local Electronic Structures and Chemical Bonds in Zr-Based Metallic Glasses

Studies on In x (As 2 Se 3 ) 1 x thin films using variable angle spectroscopic ellipsometry (VASE)

Physics of disordered materials. Gunnar A. Niklasson Solid State Physics Department of Engineering Sciences Uppsala University

Synthesis and Characterization of Innovative Multilayer, Multi Metal Oxide Thin Films by Modified Silar Deposition Method

Chapter 7 Solid Surface

Mal. Res. Soc. Symp. Proc. Vol Materials Research Society

Introduction to Semiconductor Physics. Prof.P. Ravindran, Department of Physics, Central University of Tamil Nadu, India

ECE 142: Electronic Circuits Lecture 3: Semiconductors

Dependence of Ionicity and Thermal Expansion Coefficient on Valence Electron Density in A II B IV C 2 V Chalcopyrite Semiconductors

Chapter 10. Lesson Starter. Why did you not smell the odor of the vapor immediately? Explain this event in terms of the motion of molecules.

3.1 Introduction to Semiconductors. Y. Baghzouz ECE Department UNLV

Optical band gap and refractive index dispersion parameters of As x Se 70 Te 30 x (0 x 30 at.%) amorphous films

Optical band gap and refractive index dispersion Parameters of In-Se-Te amorphous films

nano-scales order in non-crystalline oxides: strain minimizing chemical bonding self-organizations in SiO2

Electrons are shared in covalent bonds between atoms of Si. A bound electron has the lowest energy state.

Semiconductor physics I. The Crystal Structure of Solids

Unit IV Semiconductors Engineering Physics

Semiconductor Device Physics

EE130: Integrated Circuit Devices

Physical and dielectric properties of Bi 4 x R x Sr 3 Ca 3 Cu 2 O 10 glasses (x = 0.5 and R = Ag, Ni)

Review of Raman Spectra in

Engineering 2000 Chapter 8 Semiconductors. ENG2000: R.I. Hornsey Semi: 1

STRUCTURAL CHARACTERIZATION OF Te 9 Se 72 Ge 19-x Sb x (8 x 12) GLASS USING FAR-INFRARED SPECTRA

metals ISSN

Lecture Outline Chapter 17. Physics, 4 th Edition James S. Walker. Copyright 2010 Pearson Education, Inc.

Structural Relaxation and Refractive Index of Low-Loss Poly(methyl methacrylate) Glass

Modélisation des propriétés thermodynamiques par une approche topologique

Lecture 2. Semiconductor Physics. Sunday 4/10/2015 Semiconductor Physics 1-1

Chapter 1 Overview of Semiconductor Materials and Physics

EE301 Electronics I , Fall

Structural and Optical Properties of ZnSe under Pressure

Study of vibrational modes in Cu x Ag 12x In 5 S 8 mixed crystals by infrared reflection measurements

Comparative Study of Radiation Shielding Parameters for Binary Oxide Glasses

Publications W. Dieterich (after 2000)

Title. Author(s)Toyosawa, Naoko; Tanaka, Keiji. CitationPHYSICAL REVIEW B, 56(12): Issue Date Doc URL. Rights.

Magnetism and Hall effect of the Heusler alloy Co 2 ZrSn synthesized by melt-spinning process

Lecture Number - 01 Metals, Semiconductors and Insulators

First-Hand Investigation: Modeling of Semiconductors

DECRIRE LA TRANSITION VITREUSE: Simulations moléculaires et approches topologiques. Matthieu Micoulaut, LPTMC, Paris Sorbonne Universités UPMC

Concepts in Surface Physics

EFFECT OF THICKNESS FOR (BixSb2-xTe3) THIN FILMS ON THE ELECTRICAL PROPERTIES

1 Review of semiconductor materials and physics

Heterogeneity of molecular structure of Ag photo-diffused Ge 30 Se 70 thin films

Electronics The basics of semiconductor physics

Crystalline Solids have atoms arranged in an orderly repeating pattern. Amorphous Solids lack the order found in crystalline solids

SUPPLEMENTARY INFORMATION

Introduction to Condensed Matter Physics

The optical absorption edge of brookite TiO2, R. Zallen and M.P. Moret, Solid State Communications 137, 154 (2006).

Molecular Dynamics Simulations of Glass Formation and Crystallization in Binary Liquid Metals

ADVANCED UNDERGRADUATE LABORATORY EXPERIMENT 20. Semiconductor Resistance, Band Gap, and Hall Effect

dc Conductivity and dielectric properties of V 2 O 5 -Bi 2 O 3 -ZnO glass

Supplementary Figure 1: Comparison of SE spectra from annealed and unannealed P3HT samples. See Supplementary Note 1 for discussion.

KINETIC THEORY OF GASES

Worksheet 1.1. Chapter 1: Quantitative chemistry glossary

1. Introduction. Central European Journal of Physics

Pressure Raman effects and internal stress in network glasses

Highly electronegative contacts to compound semiconductorsa>

T. Egami. Model System of Dense Random Packing (DRP)

O. N. Bolebrukh 1, N. Ya. Sinyavsky 2, I. P. Korneva 2, B. Dobosz 3, M. Ostafin 3, B. Nogaj 3, R. Krzyminiewski 3

Transcription:

Available online at wwwpelagiaresearchlibrarycom Advances in Applied Science Research, 2012, 3 (2):833-837 ISSN: 0976-8610 CODEN (USA): AASRFC Study of Average Coordination Number Using Topological Concept in Ge-In-Se Glasses Manish Saxena *, Atul K Kukreti and Animesh Agarwal Moradabad Institute of Technology, Moradabad, India _ ABSTRACT The growing interest in the investigation of the properties of chalcogenide glasses stems from the actual and potential technological applications of these materials in solid state devices Moreover, several of these glasses are easily formed by melt-quenching over a large range of compositions making them suitable model systems for the investigation of the composition dependence of their properties In this paper, we reported the results from measurement of the glass composition Ge 22 In x Se 78-x (x=2, 4, 6, 8, 10), the dependence of glass transition temperature T g, atomic percentage of Se and atomic density with variation in average coordination number (Z) on the basis of topological considerations Keywords: Chalcogenide Glasses, Coordination Number; Glass Transition; Atomic Density _ INTRODUCTION To grasp the structure of disordered solids has been one of the longstanding problems in condensed-matter physics [1] For crystalline materials, Understanding the relationships between microscopic structures and macroscopic properties has been a subject in solid-state physics As it is well known that amorphous solids possess no long-range order, and not many established techniques capable of identifying nonperiodic configurations have been available, physics on amorphous materials is far behind that of the crystalline materials However, compositional studies seem to be vitally important for amorphous materials On the basis of the amorphous structure of covalent glasses, building elements may be classified into two components; one is normal bonding structure consisting of covalent bonds of densities on orders of 10 22-10 23 cm -3, which can be specified by chemical and topological natures, and the other one is defects, eg, impurities, valence-alternation pairs, dangling and wrong bonds, ie, the homopolar bonds in stoichiometric alloys [2,3] The density of defective bonds is, in general, less than 10-2 of that for the covalent bonds, and therefore structural behaviours are determined mostly by the normal configurations Further, these are primarily responsible for such electronic properties as the band-gap energy Thus, consideration of glassy characters using topological concepts may give fruitful ideas similar to those obtained through the unified understanding of crystalline properties based on periodic lattices The coordination number is preserved in covalent glasses, obeying the so-called 8 - N rule, where N is the valency of an atom The rule suggests that the numbers of nearest-neighbor atoms for Se, In, and Ge are 2, 3, and 4, respectively The average coordination number Z of covalent bonds is a good measure representing characters of atomic units [4,5,6] If a sample has a composition of Ge x In y Se 1-x-y, then Z = 4x + 3y + 2(1 - x - y) (1) 833

It should be kept in mind that an implicit assumption made on using the average coordination number is indiscriminate in species of valence bonds The chemical property is obscured, and instead, the topological nature will emerge Topological considerations It may be valuable to consider the transitions at Z = 24 and 267 in light of the constraint-counting argument originally proposed by Phillips for amorphous covalent materials [5,7,8] Taking the short-range structure into account, according to Phillips constraints theory, in the glasses having the highest stability, the number of topological constraints N co, evaluated for an atom is equal to the number of the flexibility, namely the spatial dimension N d =3: N co = N d (2) For a material having the coordination number of Z, Nco(Z) can be expressed as a sum of radial and angular valence-force constraints: [5, 9-11] N co (Z)=Z/2+(2Z -3), (3) where 2 in the angular term corresponds to the two freedoms ө and φ in a polar-coordinate representation (r, ө and φ) of an atom bonded to another atom located at the origin, and 3 can be related to the system rotation around x, y, and z axes Combining the eqs (2) and (3), we obtain Z = 24, ie, the coordination number of the most stable glass is 24 The same conclusions are also drawn by percolative arguments and counting the number of zero frequency modes [11-14] However, this is a surprising result as it is not material specific and there are no adjustable parameters involved in calculations [5, 15] Later extending the Phillips's prediction, Tanaka expressed the constraint for an atom included in a planar cluster extending in two dimensional glass structure [5, 9-11] N co (Z)= 3 = Z/2+(Z -1) (4) where the angular term is calculated as excess degrees of Z variables in ө over a rotation freedom around the z axis The number of the angular constraints is reduced to (Z 1) because of the presumption of the planar medium-range configurations If the cluster is laid in a three-dimensional space, each atom must have three independent freedoms for stable existence The expression in eqn (4) gives Z = 267, ie, a two-dimensional glass may be fixed stably in a three-dimensional space, if the coordination number is 267 MATERIALS AND METHODS For the preparation of Ge-In-Se glasses, high purity elements (99999 %) in appropriate atomic percentage were weighed in to quartz ampoules The ampoules, sealed under high vacuum conditions (10-5 Torr) were suspended in a vertical furnace at 900 o C for 24 hours, shaken vigorously for homogeneous mixing The temperature was raised at a rate of 3 to 4 K/min The melt was rapidly quenched in ice-water mixture The quenched samples were removed from the ampoule by dissolving the ampoule in a mixture of HF+H 2 O 2 for about 20 hours The samples were then kept at room temperature in dark for about one month for attainment of thermodynamic equilibrium as stressed by Abkowitz in chalcogenide glasses [16] Amorphous nature of the samples was ensured by the absence of any sharp peaks in the X-ray diffractograms The prepared solid solution in powder form has been used for thermal analysis using the Differential Thermal Analysis (DTA) This material was first sealed in a standard aluminium pan and the calorimetric thermo grams of various compositions of the samples were obtained with DTA calorimeter in the temperature range 50-700 o C at various heating rates (10 20 K min -1 ) Calorimetric measurements were made under non-isothermal conditions to study glass transition temperature T g RESULTS AND DISCUSSION Thorpe also interpreted Transition from an under constrained to an over constrained network [10,11] in terms of percolation of rigidity in an inhomogeneous medium containing both rigid and floppy regions Anomalous features in many physical properties have been reported around Z = 24 to Z =267 in several systems The ternary glass 834

system Ge-In-Se has got one of the largest glass forming regions among chalcogenide glasses Therefore, it is particularly well suited to test the validity of the above concepts Germanium, Indium and selenium are elements of groups IV, V, and VI respectively This brings about the covalent character of the interaction between their atoms and results in a broad glass-forming region In the three component Ge-In-Se system, selenium will react with germanium and produce structural units of GeSe 4/2 When germanium is introduced into indium selenides, gradual composition changes takes place in the system forming GeSe 4/2 and InSe 3/2 structural units Also, formation of complex structural units like Ge 4/2 In 2 Se 4/2 occurs Approximate thermo chemical calculations indicate that in the three component Ge-In-Se system, there can be several sections with different contents of structural units and consequently, with different physical and chemical properties There can be sections in which the structure is determined mainly by bonds of the selenium type [17] The composition dependence of many physical properties of Ge-In-Se system of glasses show anomalous variations at Z = 24 and at Z = 267 Elastic constants of Ge-In-Se glasses show a threshold behaviour at Z = 24 [3], but the data do not match with a previous report [15] The persistent infrared spectral hole burning studies of the effect of network topology on low temperature relaxation in Ge-In-Se system of glasses do not show any indication of a rigidity transition or any other unusual features at Z = 24 [18] On the other hand, the composition dependence of optical band gap and thermal diffusivity show threshold maxima at Z = 267 [19] The average coordination number Z for the glass composition Ge 22 In x Se 78-x is calculated using the relation Z = [22Nc(Ge) + xnc(in) + (78 x)nc(se)] / 100 (5) where Nc(Ge), Nc(In) and Nc(Se) are the average coordination numbers of Ge, In and Se, respectively Average coordination numbers of four for Ge, three for In and two for Se, obeying the so-called (8 N) rule [20], were adopted An average coordination number of three for In, a value that was recently obtained by earlier workers [21] from extended X-ray absorption fine structure (EXAFS) measurements on Ge-In-Se glasses was used in the calculation of Z The compositions prepared covered a range of Z values from 248 to 264 with a decrease in Se concentration from 76 to 68 [Fig 1] The variation of glass transition temperature T g with Z is shown in fig 2 The graph indicates the increase in T g with increase in Z but decreasing Se at % 27 265 26 255 25 245 24 68 70 72 74 76 Se at % Fig1 : Variation of Average Coordination Number with Se at% 835

Glass Transition Temperature Tg(K) 750 700 650 600 550 248 252 256 26 264 Fig 2: variation of glass transition temperature T g with Z The ambient macroscopic density measurements were performed by the Archimedes method The samples used for density measurements were carefully chosen free from cracks and cleaned in methanol to remove surface contaminations The atomic density was calculated from the formula [22] ρ = ρ o N A / c n A n (6) where ρ 0, N A, c n and A n are the measured density, Avogadro's number, atomic concentration and atomic weight of the n th component, respectively Atomic Density, ρ (10 22 atoms/cm 3 ) 341 34 339 338 337 248 252 256 26 264 Fig 3: Variation of atomic density with Z The variation of ρ with Z for glasses with 72 at% Se is shown in fig 3 The ρ Z dependence for glasses with 74 at% Se reveals a broad maximum at Z = 252 corresponding to the composition with 22 at % Ge This maximum can be accounted for by using Tanaka's structural transition model [23-25] 836

CONCLUSION The dependence of glass transition temperature T g, atomic percentage of Se and atomic density with variation in average coordination number (Z) on the basis of topological consideration has been found suitable and in accordance with earlier reported works The anomalies observed in the atomic density-composition dependence and Average Coordination Numbers in glasses of the Ge-In-Se system are found to be consistent with the models of topological transition and the ordered bond network model given by Phillips, Thorpe and Tanaka REFERENCES [1] W H Zachariasen, J Am Chern Soc, 1932, 54, 3841 [2] S R Ovshinsky and D Adler, Contemp Phys, 1978, 19,109 [3] M Leh Deli, D H Boigny, G Kra, J Non-Oxide Glasses, 2010, 1(1), 59 [4] D Sushama, G Achamma, P Pradeep, J Opto Elec & Adv Mater, 2006, 8(4), 1639 [5] J C Phillips, J Non-Cryst Solids, 1979, 34,153 [6] J C Phillips, J Non-Cryst Solids, 1981, 43, 37 [7] D Singh, S Kumar, R Thangraj, Adv Appl Sci Res, 2011, 2(3), 20 [8] R Kumar, P Sharma, VS Rangra, J Non-Oxide Glasses, 2011, 3(2), 45 [9] G H Dohler, R Dandoloff, and H Bilz, J Non-Cryst Solids, 1980, 42, 87 [10] M F Thorpe, J Non-Cryst Solids, 1983, 57, 355 [11] J C Phillips and M F Thorpe, Solid State Commun, 1985, 53, 699 [12] H He and M F Thorpe, Phys Rev Lett, 1985, 54, 2107 [13] J C Phillips, Phys Rev B, 1985, 31,8157 [14] S Tiwari, AK Saxena, D Saxena, Int J Pure Appl Sci Technol, 2011, 5(1), 46 [15] G Saffarini, J Mater Sci Lett, 2000, 19, 797 [16] M A Abkowitz in The Physics of Se and Te, edited by E Ferlach and P Grosse, Springer, Berlin, 1979 p 178 [17] U Borisova Glassy Semiconductors (Plennum Press New York 1981) [18] S P Love A J Sievers, B L Halfpap, S M Lindsay, Phys Rev Lett, 1990, 65, 1791 [19] K Nandakumar and J Philip, Indian J Phys, 1995, 69A, 595 [20] N F Mott, Phil Mag, 1969, 19, 835 [21] J Ledru, J M Saiter, G Saffarini, and S Benazeth, 7th Internat Conf Structure of Non-Crystalline Materials, Cagliari, Sardegna (Italy), September 15 to 19, 1997 [22] G Saffarini, Phys Stat Sol (b), 1999, 213, 261 [23] K Tanaka, J Non-Cryst Solids, 1987, 97/98, 391 [24] K Tanaka, J Non-Cryst Solids, 1988, 103, 149 [25] K Tanaka, Phys Rev, 1989, B 39, 1270 837