Advanced Monolithic Systems

Advanced Monolithic Systems FEATURES ± mv (±.%) max. initial tolerance (A grade) Operating Current µa to ma Low Voltage Reference.5 Max..6Ω Dynamic Impedance (A grade) Low Temperature Coefficient.5V Device and Adjustable Device also available AMS85.5 and AMS85 series, respectively AMS85.5 and AMS85 series. AMS85./ MICROPOWER VOLTAGE REFERENCE DIODE APPLICATIONS Battery Powered Systems Instrumentation A/D, D/A Converters Temperature measurement Current sources Notebook/Personal Computer Monitors/ VCR/ TV Pagers RoHS compliant GENERAL DESCRIPTION The AMS85./ are twoterminal micropower bandgap voltage reference diodes. They feature a very low dynamic impedance and good temperature coefficient, operating over a µa to ma current range. Onchip trimming is used to provide tight voltage tolerance. Since the AMS85./ is a bandgap reference, uses only transistors and resistors, low noise and good longterm stability result. Careful design of the AMS85./ has made the device exceptionally tolerant of capacitive loading, making it easy to use in almost any reference application. The wide dynamic operating range allows its use with widely varying supplies with excellent regulation. The extremely low power drain of the AMS85./ makes these reference diodes useful for micropower circuitry. These voltage references can be used to make portable meters, regulators or general purpose analog circuitry with battery life approaching shelf life. Further more, the wide operating current allows it to replace older references with a tight tolerance part. The AMS85. is operational in the full industrial temperature range of C to 85 C while is operating over a C to 7 C temperature range. The AMS85./ are available in TO9, SO8 and SOT89 packages. ORDERING INFORMATION: TOL. PACKAGE TYPE OPERATING TO9 8 LEAD SOIC SOT89 TEMPERATURE RANGE ±mv AMS85.AN AMS85.AS AMS85.AL to 85 C ±mv AMS85.BN AMS85.BS AMS85.BL to 85 C ±5mV AMS85.CN AMS85.CS AMS85.CL to 85 C ±mv AN AS AL to 7 C ±mv BN BS BL to 7 C ±5mV CN CS CL to 7 C

AMS85./ ABSOLUTE MAXIMUM RATINGS Reverse Current ma Storage temperature 55 C to 5 C Forward Current ma Soldering information (5 sec) 65 C Operating Temperature Range AMS85. C to 85 C C to 7 C ELECTRICAL CHARACTERISTICS Electrical Characteristics at I R = µa, and T A = 5 C unless otherwise specified. Parameter Reverse Breakdown Voltage (Note ) Reverse Dynamic Impedance (Note ) Reverse Breakdown Voltage Change with current (Note ) Conditions I R µa AMS85A. AMS85B. AMS85C...5.9..5.7.5.5.6 V I R µa, f =Hz..6 Ω µa I R ma ma I R ma Units mv Min. Operating Current (Note ) 8 8 8 5 5 µa µa Wide Band Noise (Note 5) Temperature Coeff. (Note 6) Long Term Stability (Note 5) I R µa, Hz f khz T A =5 C±. C T = Hr 6 6 6 µv 5 5 5 ppm/ C ppm ELECTRICAL CHARACTERISTICS Electrical Characteristics at I R = µa, and T A = 5 C unless otherwise specified. Parameter Reverse Breakdown Voltage (Note ) Reverse Dynamic Impedance (Note ) Reverse Breakdown Voltage Change with Current (Note ) Conditions I R µa AMS85A. AMS85B. AMS85C...5.9..5.7.5.5.6 V I R µa, f =Hz..6 Ω µa I R ma ma I R ma Units mv Min. Operating Current (Note ) 8 8 8 5 5 µa µa Wide Band Noise (Note 5) Temperature Coeff. (Note 6) Long Term Stability (Note 5) I R µa, Hz f khz T A =5 C±. C T = Hr 6 6 6 µv 5 5 5 ppm/ C ppm

AMS85./ Note : Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is intended to be functional, but do not guarantee specific performance limits. For guaranteed specifications and test conditions, see the Electrical Characteristics. The guaranteed specifications apply only for the test conditions listed. Note : For elevated temperature operation, T j max is: AMS85 AMS85 5 C C Thermal Resistance TO9 SO8 SOT89 ϕ JA (junction to ambient) 7 C/W (.5 leads) 65 C/W 6 C/W Note : Parameters identified with boldface type apply at temperature extremes. All other numbers apply at T A = T J = 5 C. Note : Guaranteed and % production tested. Note 5: Guaranteed but not % production tested. These limits are not used to calculate average outgoing quality levels. Note 6: The average temperature coefficient is defined as the maximum deviation of reference voltage at all measured temperatures between the operating T MAX and T MIN, divided by T MAX T MIN. The measured temperatures are C, 5 C, 7 C, 85 C. PIN CONNECTIONS TO9 8L SOIC SOT89 Plastic Package (N) SO Package (S) (L) 8 N/C N/C N/C 7 6 5 N/C N/C N/C N/C Bottom View Top View Top View TYPICAL APPLICATIONS Wide Input Micropower Reference Reference from Range Reference from 9V Battery.5V Battery V IN =.V TO V 9V.5V LM 5k k.k OUT.V.V.V

AMS85./ TYPICAL APPLICATIONS (Continued) C C Thermometer Lower Power Thermometer C C Thermometer * 5 M 5 µa M I OUT k LM 8k TO k. TO.6V 5µA M I OUT k V LM R R k.5v (..6V) V LM R R k..6v V R V R 5 R * N68 or N97 select for inverse H FE 5 Select for operation at.v I Q 6µA to 9 µa R Calibration. Short, adjust R for I OUT = temp at µa/ K. Remove short, adjust R for correct reading in C I Q at.v 5 µa I Q at.6v.ma Calibration. Short, adjust R for I OUT = temp at.8µa/ K. Remove short, adjust R for correct reading in F Centigrade Thermometer Micropower* V Reference I Q.5V V R LM V.k V V OUTPUT mv/ C.k.k 9k 5k 7k M 7 6 LM5C 8 M V IN = 5V 5pF.5M V k 5k Calibration *I Q µa standby current. Adjust so that V = temp at mv/ K.. Adjust V to 7.mV. I Q for.v to.6v battery voltage = 5µA to 5µA

AMS85./ TYPICAL APPLICATIONS (Continued) Micropower Thermocouple Cold Junction Compensator V LM MERCURY CELL.5V 5.k M % ZERO ADJ k R V R k % TC ADJ 5 Adjustment Procedure. Adjust TC ADJ pot until voltage across equals Kelvin temperature multiplied by the thermocouple Seebeck coefficient.. Adjust ZERO ADJ pot until voltage across R equals the thermocouple Seebeck coefficient multiplied by 7.. Thermocouple Seebeck R Voltage Voltage Type Coefficient (Ω) (Ω) Across Across R (mv/ C) @ 5 C (mv) (mv) THERMOCOUPLE COLD JUNCTION ISO THERMAL WITH LM METER J 5. 5.k 5.6. T.8 k.77.78 K.8 8 95Ω.7.7 S 6. 6. 5Ω.98.766 Typical supply current 5µA Precision µa to ma Current Sources V.5V TO 7V I OUT * k C 5pF 7 6 LM R.5V TO 7V k I OUT * 7 LM C 5pF 6 R V *I OUT =.V/R

AMS85./ TYPICAL PERFORMANCE CHARACTERISTICS OUTPUT VOLTAGE CHANGE (mv) Reverse Characteristics 8 T A =5 C 6 T A =5 C T A =55 C.. REVERSE CURRENT (ma) REVERSE CURRENT (µa) Reverse Characteristics T A =5 C T A =55 C T A =5 C....6.8.. REVERSE VOLTAGE (V) FORWARD VOLTAGE (V) Forward Characteristics. T A =55 C.8. T A =5 C T A =5 C.. FORWARD CURRENT (ma) DYNAMIC IMPEDANCE (Ω) Reverse Dynamic Impedance T A =5 C T A =5 C T A =55 C... REVERSE CURRENT (ma) REFERENCE VOLTAGE (V).6.5... Temperature Drift of Representative Units I R = µa 55 5 5 5 5 5 65 85 5 5 TEMPERATURE ( C) DYNAMIC IMPEDANCE (Ω) k k Reverse Dynamic Impedance T A =5 C I R = µa. k k k FREQUENCY (Hz) M INTEGRATED NOISE ( µv) 7 6 5 Filtered Output Noise I R = µa µa SINGLE POLE LOW PASS OUTPUT SHARP CUTOFF FILTER NOISE (nv/ Hz) 7 6 5 Noise Voltage I R = µa VOLTAGE SWING (V)..5.5 ~ Response Time INPUT OUTPUT k INPUT OUTPUT ~ k k k CUTOFF FREQUENCY (Hz) k k k FREQUENCY (Hz) 6 TIME (µs)

PACKAGE DIMENSIONS inches (millimeters) unless otherwise noted. AMS85./ LEAD TO9 PLASTIC PACKAGE (N).6±.5 (.5±.7) DIA.8±.5 (.57±.7).8±.5 (.57±.7).9 (.86) NOM.6±. (.5±.5).±. (.556±.7).5 (.7) MIN.5 (.7) MAX UNCONTROLLED LEAD DIMENSIONS 5 NOM NOM.5±.5 (.7±.7).6±. (.6±.76).5±. (.8±.5) N (TO9 ) AMS DRW# 9 8 LEAD SOIC PLASTIC PACKAGE (S).89.97* (.85.) 8 7 6 5.8. (5.796.97).5.57** (.8.988).5.69 (.6.75).. (..5).8. (..5).. (.5.58) x 5 8 TYP..9 (.55.8).5 (.7) TYP.6.5 (.6.7) S (SO8 ) AMS DRW# 9 *DIMENSION DOES NOT INCLUDE MOLD FLASH. MOLD FLASH SHALL NOT EXCEED.6" (.5mm) PER SIDE **DIMENSION DOES NOT INCLUDE INTERLEAD FLASH. INTERLEAD FLASH SHALL NOT EXCEED." (.5mm) PER SIDE

PACKAGE DIMENSIONS inches (millimeters) unless otherwise noted (Continued). AMS85./ SOT89 PLASTIC PACKAGE (L).7.8 (..6).6.7 (.6.8).55.6 (..6)..7 (.5.).55.67 (.9.5).9. (.9.6).8.9 (..9).5.7 (.89.).59 (.5) BSC.8 (.) BSC.7. (..56)..9 (.6.8) L (SOT89 ) AMS DRW# 9