PM75B4LA060. APPLICATION Photo voltaic power conditioner PM75B4LA060 MITSUBISHI <INTELLIGENT POWER MODULES> FLAT-BASE TYPE INSULATED PACKAGE FEATURE

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Transcription:

PMB4LA060 PMB4LA060 FEATURE a) Adopting new th generation IGBT (CSTBT TM ) chip, which performance is improved by 1µm fine rule process. r example, typical ce(sat)=1. @Tj=1 C b) Over-temperature protection by detecting Tj of the CSTBT TM chips and error output is possible from all each conservation upper and lower arm of IPM. c) New small package Reduce the package size by 10%, thickness by % from S-DASH series. φ A, 600 Current-sense IGBT type inverter Monolithic gate drive & protection logic Detection, protection & status indication circuits for, shortcircuit, over-temperature & under-voltage (P- available from upper arm devices) UL Recognized Yellow Card No.E806(N) File No.E801 APPLICATION Photo voltaic power conditioner PACKAGE OUTLES Dimensions in mm L A B E L 11 10 106 (19.) 19.. 16-16 - 16 1. - 6- -φ. MOUNTG HOLES 16 1. 1. N P 1 1 9 1 19 -φ. 14. B U W 6-M NUTS 1. 11. 10. 1 + 1 0. 1 (REWG DEPTH). 19-0. 1 1 Terminal code 1. UPC. UFO. UP 4. UP1. PC 6. FO. P 8. P1 9. 10. 11. 1. 1. 14. N1 1. 16. UN 1. N 18. 19. Jun. 00

PMB4LA060 TERNAL FUTIONS BLOCK DIAGRAM FO N1 N UN P P1 PC FO UP UP1 UPC UFO 1.k 1.k 1.k GND cc GND cc GND cc GND cc GND OUT GND OUT GND OUT GND OUT B N W U P MAXIMUM RATGS (Tj = C, unless otherwise noted) ERTER PART CES ±IC ±ICP PC Tj Collector-Emitter oltage Collector Current Collector Current (Peak) Collector Dissipation Junction Temperature D = 1, C = 1 TC = C TC = C TC = C Ratings 600 10 90 0 ~ +10 A A W C CONTROL PART Ratings D Supply oltage Applied between : UP1-UPC P1-PC, N1-0 C Input oltage Applied between : UP-UPC, P-PC UN N- 0 FO IFO Fault Output Supply oltage Fault Output Current Applied between : UFO-UPC, FO-PC, FO- Sink current at UFO, FO, FO terminals 0 0 ma Jun. 00

PMB4LA060 TAL SYSTEM Ratings CC(PR) Supply oltage Protected by D = 1. ~ 16., Inverter Part, Tj = +1 C Start 400 CC(surge) Tstg iso Supply oltage (Surge) Storage Temperature Isolation oltage Applied between : P-N, Surge value 60Hz, Sinusoidal, Charged part to Base, AC 1 min. 00 40 ~ +1 00 C rms THERMAL RESISTAES Limits Min. Typ. Max. Rth(j-c)Q Junction to case Thermal Inverter IGBT part (per 1/4 module) (Note-1) 0. Rth(j-c)F Resistances Inverter FWDi part (per 1/4 module) (Note-1) 0. C/W Case to fin, (per 1 module) Rth(c-f) Contact Thermal Resistance 0.08 Thermal grease applied (Note-1) (Note-1) Tc (under the chip) measurement point is below. (unit : mm) arm UP P UN N axis X Y IGBT 0.4 8. FWDi 0.4 0.8 IGBT 61. 8. FWDi 61. 0.8 IGBT 9. 6. FWDi 9. 1. IGBT.4 6. FWDi.4 1. Bottom view ELECTRICAL CHARACTERISTICS (Tj = C, unless otherwise noted) ERTER PART CE(sat) EC ton trr tc(on) toff tc(off) ICES Collector-Emitter Saturation oltage FWDi rward oltage Switching Time Collector-Emitter Cutoff Current D = 1, IC = A Tj = C C = 0 (Fig. 1) Tj = 1 C IC = A, D = 1, C = 1 (Fig. ) D = 1, C = 0 1 CC = 00, IC = A Tj = 1 C Inductive Load (Fig.,4) CE = CES, C = 1 (Fig. ) Tj = C Tj = 1 C Limits Min. Typ. Max. 0. 1. 1.. 0. 0.1 0. 0.9 0.. 1.4 0. 0.4 1.8 0.4 1 10 µs ma Jun. 00

PMB4LA060 CONTROL PART ID th(on) th(off) toff() r U Ur IFO(H) IFO(L) Circuit Current Input ON Threshold oltage Input OFF Threshold oltage Short Circuit Trip Level Short Circuit Current Delay Time Over Temperature Protection Supply Circuit Under-oltage Protection Fault Output Current N1- D = 1, C = 1 *P1-*PC Applied between : UP-UPC, P-PC UN N- 0 Tj 1 C, D = 1 (Fig.,6) D = 1 (Fig.,6) D = 1 Trip level Detect Tj of IGBT chip Reset level Trip level 0 Tj 1 C Reset level D = 1, FO = 1 (Note-) Minimum Fault Output Pulse tfo D = 1 (Note-) 1.0 1.8 ms Width (Note-) Fault output is given only when the internal, & U protections schemes of either upper or lower arm device operate to protect it. Min. 1. 1. 10 1 11. Limits Typ. 1 6 1..0 0. 14 1 1.0 1. 10 Max. 1 1.8. 1. 0.01 1 ma A µs C ma MECHANICAL RATGS AND CHARACTERISTICS Mounting torque Mounting torque Weight Main terminal Mounting part screw : M screw : M Limits Min. Typ. Max....0.0 80.. N m N m g RECOMMENDED CONDITIONS FOR USE CC D C(ON) C(OFF) Supply oltage Control Supply oltage Input ON oltage Input OFF oltage Applied across P-N terminals Applied between : UP1-UPC, P1-PC N1- Applied between : UP-UPC, P-PC UN N- (Note-) Recommended value 400 1 ± 1. 0.8 9.0 fpwm PWM Input Frequency Using Application Circuit of Fig. 8 0 khz tdead Arm Shoot-through Blocking Time r IPM s each input signals (Fig. ).0 µs (Note-) With ripple satisfying the following conditions : dv/dt swing ±/µs, ariation peak to peak Jun. 00

PMB4LA060 PRECAUTIONS FOR TESTG 1. Before appling any control supply voltage (D), the input terminals should be pulled up by resistores, etc. to their corresponding supply voltage and each input signal should be kept off state. After this, the specified ON and OFF level setting for each input signal should be done.. When performing tests, the turn-off surge voltage spike at the corresponding protection operation should not be allowed to rise above CES rating of the device. (These test should not be done by using a curve tracer or its equivalent.) P, (U,) P, (U,) C (0) C (1) U,, (N) D (all) Fig. 1 CE(sat) Test U,, (N) D (all) Fig. EC Test a) Lower Arm Switching P C (1) C Signal input (Upper Arm) Signal input (Lower Arm) U, CS cc 90% trr Irr 90% CE b) Upper Arm Switching C C (1) Signal input (Upper Arm) Signal input (Lower Arm) D (all) D (all) Fig. Switching Time and Test Circuit N P U, N CS cc 10% 10% 10% 10% tc(on) tc(off) C td(on) tr td(off) tf (ton= td(on) + tr) (toff= td(off) + tf) Fig. 4 Switching Time Test Waveform C Short Circuit Current P, (U,) A Constant Current C (1) Pulse CE Trip D (all) U,, (N) Fig. ICES Test toff() Fig. 6 Test Waveform IPM input signal C (Upper Arm) 0 1. 1. t IPM input signal C (Lower Arm) 0 1. t tdead tdead tdead 1.: Input on threshold voltage th(on) typical value, : Input off threshold voltage th(off) typical value Fig. Dead Time Measurement Point Example Jun. 00

PMB4LA060 IF 0k 0.1µ 10µ UP1 UFO 1.k UP UPC cc OUT GND GND P U IF 0k 0.1µ 10µ P1 FO 1.k P PC cc OUT GND GND ~ AC Output W IF 0k 0.1µ 10µ UN cc OUT GND GND N IF 0k 0.1µ 10µ N cc OUT GND GND N1 B FO 1.k Fig. 8 Application Example Circuit NES FOR STABLE AND SAFE OPERATION ; Design the PCB pattern to minimize wiring length between opto-coupler and IPM s input terminal, and also to minimize the stray capacity between the input and output wirings of opto-coupler. Connect low impedance capacitor between the cc and GND terminal of each fast switching opto-coupler. Fast switching opto-couplers: tplh, tphl 0.8µs, Use High CMR type. Slow switching opto-coupler: CTR > 100% Use isolated control power supplies (D). Also, care should be taken to minimize the instantaneous voltage charge of the power supply. Make inductance of DC bus line as small as possible, and minimize surge voltage using snubber capacitor between P and N terminal. Jun. 00

PMB4LA060 PERFORMAE CURES 100 80 60 40 0 OUTPUT CHARACTERISTICS Tj = C D = 1 1 1 0 0 0. 1 1. COLLECTOR-EMITTER SATURATION OLTAGE CE (sat) () COLLECTOR-EMITTER SATURATION OLTAGE CE (sat) () COLLECTOR-EMITTER SATURATION OLTAGE (S. ) CHARACTERISTICS D = 1 1. 1 0. Tj = C Tj = 1 C 0 0 0 40 60 80 100 COLLECTOR-EMITTER SATURATION OLTAGE CE (sat) () COLLECTOR-EMITTER SATURATION OLTAGE (S. D) CHARACTERISTICS 1. 1 0. IC = A Tj = C Tj = 1 C 0 1 1 14 1 16 1 18 SWITCHG TIME tc(on), tc(off) (µs) 10 SWITCHG TIME CHARACTERISTICS tc(off) tc(on) tc(off) CC = 00 D = 1 Tj = C Tj = 1 C 10 1 10 CONTROL SUPPLY OLTAGE D () SWITCHG TIME ton, toff (µs) 10 1 SWITCHG TIME CHARACTERISTICS toff ton CC = 00 D = 1 Tj = C Tj = 1 C toff ton 10 1 10 SWITCHG LOSS ESW(on), ESW(off) (mj/pulse) SWITCHG LOSS CHARACTERISTICS 10 1 ESW(on) CC = 00 D = 1 Tj = C Tj = 1 C ESW(on) ESW(off) ESW(off) 10 10 1 10 Jun. 00

PMB4LA060 COLLECTOR REERSE CURRENT IC (A) FWDi FORWARD OLTAGE CHARACTERISTICS 10 D = 1 10 1 0 Tj = C Tj = 1 C 0. 1 1.. EMITTER-COLLECTOR OLTAGE EC () REERSE RECOERY TIME trr (µs) FWDi REERSE RECOERY CHARACTERISTICS 10 1 10 Irr trr CC = 00 D = 1 Tj = C Tj = 1 C 10 1 10 10 1 10 REERSE RECOERY CURRENT lrr (A) FWDi REERSE RECOERY LOSS CHARACTERISTICS 10 1 REERSE RECOERY LOSS Err (mj/pulse) CC = 00 D = 1 Tj = C Tj = 1 C Err 10 10 1 10 COLLECTOR REERSE CURRENT IC (A) NORMALIZED TRANSIENT THERMAL IMPEDAE Zth (j c) 10 TRANSIENT THERMAL IMPEDAE CHARACTERISTICS (IGBT PART) 10 TRANSIENT THERMAL IMPEDAE CHARACTERISTICS (FWDi PART) Single Pulse Single Pulse Per unit base = Rth(j c)q = 0. C/W Per unit base = Rth(j c)f = 0. C/W 10 10 10 4 10 10 10 1 10 10 10 4 10 10 10 1 NORMALIZED TRANSIENT THERMAL IMPEDAE Zth (j c) TIME (s) TIME (s) Jun. 00