1 Company code GT GreenTouch

Size: px
Start display at page:

Download "1 Company code GT GreenTouch"

Transcription

1 esign for simple and convenience the idea Outstanding quality,reliability and ost-effective 1 ompany code GT GreenTouch 2 Type TM Touch Monitor OM Open Frame Monitor 3 Product's diagonal dimension 4 Product series 5 style code 6 ompatiable touch screen name code R 4W/5W resistive touch screen TW Weida chipset capacitive touch screen IR -series Infrared touch screen IRK K-series Infrared touch screen W Surface acoustic wave touch screen WL coustic wave touch screen with aluminium bezel 7 solution H HMI To find out more about our extensive range of GreenTouch touch solutions, go to or ifo@greentouch.com.cn Service call: / Shenzhen Green o., Ltd. reserves the right to change or update, without notice, any information contained herein; to change, without notice, the design, construction, materials, processing or specifications of any products; and to discontinue or limit production or distribution of any products. GreenTouch (logo) and Shenzhen Green o., Ltd. opyright. ll rights reserved Shenzhen Green o., Ltd. ll rights reserved.

2 ack isplay Size isplay Ports VG+VI No Touch IN VG VI US Shenzhen Green o.,ltd esign GT-OM-1905 ate heck ate 0 ate 3rd angle

3 ack isplay Size isplay Ports VG+VI+HMI No Touch ERPHONE VG UIO IN VI HMI IN US Shenzhen Green o.,ltd esign GT-OM-1905-H ate heck ate 0 ate 3rd angle

4 ack isplay Size isplay Ports VG+VI 4W/5W Resistive IN VG VI US Shenzhen Green o.,ltd esign GT-TM-1905-R ate heck ate 0 ate 3rd angle

5 ack isplay Size isplay Ports VG+VI+HMI 4W/5W Resistive ERPHONE VG UIO IN VI HMI IN US Shenzhen Green o.,ltd esign GT-TM-1905-R-H ate heck ate 0 ate 3rd angle

6 ack isplay Size isplay Ports VG+VI W-serie capacitive IN VG VI US Shenzhen Green o.,ltd esign GT-TM-1905-TW ate heck ate 0 ate 3rd angle

7 ack isplay Size isplay Ports VG+VI+HMI W-serie capacitive ERPHONE VG UIO IN VI HMI IN US Shenzhen Green o.,ltd esign GT-TM-1905-TW-H ate heck ate 0 ate 3rd angle

8 ack isplay Size isplay Ports VG+VI -serie Infrared IN VG VI US Shenzhen Green o.,ltd esign GT-TM-1905-IR ate heck ate 0 ate 3rd angle

9 ack isplay Size isplay Ports VG+VI+HMI -serie Infrared ERPHONE VG UIO IN VI HMI IN US Shenzhen Green o.,ltd esign GT-TM-1905-IR-H ate heck ate 0 ate ug rd angle

10 ack isplay Size isplay Ports VG+VI K-serie Infrared IN VG VI US Shenzhen Green o.,ltd esign GT-TM-1905-IRK ate heck ate 0 ate 3rd angle

11 ack isplay Size isplay Ports VG+VI+HMI K-serie Infrared ERPHONE VG UIO IN VI HMI IN US Shenzhen Green o.,ltd esign GT-TM-1905-IRK-H ate heck ate 0 ate ug rd angle

12 ack isplay Size isplay Ports VG+VI Surface acoustic wave IN VG VI US Shenzhen Green o.,ltd esign GT-TM-1905-W ate heck ate 0 ate 3rd angle

13 ack isplay Size isplay Ports VG+VI+HMI Surface acoustic wave ERPHONE VG UIO IN VI HMI IN US Shenzhen Green o.,ltd esign GT-TM-1905-W-H ate heck ate 0 ate 3rd angle

14 ack isplay Size isplay Ports VG+VI luminium edge SW IN VG VI US Shenzhen Green o.,ltd esign GT-TM-1905-WL ate heck ate 0 ate 3rd angle

15 ack isplay Size isplay Ports VG+VI+HMI luminium edge SW ERPHONE VG UIO IN VI HMI IN US Shenzhen Green o.,ltd esign GT-TM-1905-WL-H ate heck ate 0 ate 3rd angle

Applications. Technologies. Resistive. Capacitive. Optical. Surface wave

Applications. Technologies. Resistive. Capacitive. Optical. Surface wave Touch Technologies Resistive Capacitive Optical Surface wave 2 tj Resistive Touch 4 wire 2 layers of resistive material 1 with connections at top/bottom 1 with connections at sides Separated by air/spacers

More information

PROVIDE HAND DAMPER WITH ACCESS DOOR WHERE SHOWN ON PLANS BRANCH DUCT BRANCH MAIN FIXED CEILINGS PLAN A

PROVIDE HAND DAMPER WITH ACCESS DOOR WHERE SHOWN ON PLANS BRANCH DUCT BRANCH MAIN FIXED CEILINGS PLAN A Y ()... : U U U, U. U U U U U. U U U U U U U U (QUY) U U U QY QU.. h U U U U QU QUY QU U Z Y., U U U U U. U Y Y. U.. U U U (U ) Y U () U () UY U U U ( ) U U U U ( ) Y Y U U Y U Y "x" " o "/".. / U U U

More information

PROVIDE HAND DAMPER WITH ACCESS DOOR WHERE SHOWN ON PLANS BRANCH DUCT BRANCH MAIN FIXED CEILINGS PLAN A

PROVIDE HAND DAMPER WITH ACCESS DOOR WHERE SHOWN ON PLANS BRANCH DUCT BRANCH MAIN FIXED CEILINGS PLAN A H Y ().. H WH WH HW. : U H H U H U, U HW. U HU H U UH H U H H H H W WH. U H H U U U U U U U (QUY) U U U QY QU.. h HU HH U U U QU H QUY QU U Z Y., U U W WH HW H H U U HU. U Y Y. U.. U HU U H H (U ) HH Y

More information

STEVAL-CCM007V2. STM32-based NAND Flash driver demonstration board (with TFT MB785/P) Description. Features

STEVAL-CCM007V2. STM32-based NAND Flash driver demonstration board (with TFT MB785/P) Description. Features TL-M TM-based lash driver demonstration board (with TT M) escription ata brief TL-M The TL-M is a demonstration board for a lash driver based on the TMZT microcontroller. t supports byte and kilobyte page

More information

JIEJIE MICROELECTRONICS CO., Ltd

JIEJIE MICROELECTRONICS CO., Ltd JIJI MIROLTRONIS O., Ltd 8 TRIs Rev.3. SRIPTION: The JT8 series of double mesa technology provide high interference immunity, They can be used as an static ON/O function in electrical control system, and

More information

EE 330 Lecture 16. MOSFET Modeling CMOS Process Flow

EE 330 Lecture 16. MOSFET Modeling CMOS Process Flow EE 330 Lecture 16 MOFET Modeling CMO Process Flow Review from Last Lecture Limitations of Existing Models V V OUT V OUT V?? V IN V OUT V IN V IN V witch-level Models V imple square-law Model Logic ate

More information

ALUMINIUM ELECTROLYTIC CAPACITORS PG - LL9 Long Life Grade

ALUMINIUM ELECTROLYTIC CAPACITORS PG - LL9 Long Life Grade Useful Life : Useful life is the perid f time which the capacitr takes t reach end-f-life Fr PG-LL9 capacitrs the useful life is estimated as 100 hurs at maximum rated temperature, ripple current and vltage

More information

All-in-one or BOX industrial PC for autonomous or distributed applications

All-in-one or BOX industrial PC for autonomous or distributed applications M a g e l i s i P C All-in-one or BOX industrial PC for autonomous or distributed applications Intel Core Duo TM Windows XP TM HDD / Flash disk M a g e l i s i P C You are looking for an open, powerful

More information

LMP 210. Style B. Style S. Maximum pressure 60 bar F l o w r a t e s t o l / m i n

LMP 210. Style B. Style S. Maximum pressure 60 bar F l o w r a t e s t o l / m i n LMP 0 Style S Style Maximum pressure 60 bar F l o w r a t e s t o 7 0 l / m i n 6 Technical data Filter housing (Materials) Head: luminium Housing: nodised luminium ypass valve: Nylon - Steel Pressure

More information

SCT10N120. Silicon carbide Power MOSFET 1200 V, 12 A, 520 mω (typ., T J = 150 C) in an HiP247 package. Datasheet. Features. Applications.

SCT10N120. Silicon carbide Power MOSFET 1200 V, 12 A, 520 mω (typ., T J = 150 C) in an HiP247 package. Datasheet. Features. Applications. Datasheet Silicon carbide Power MOSFET 12 V, 12 A, 52 mω (typ., T J = 15 C) in an HiP247 package Features Very tight variation of on-resistance vs. temperature Very high operating junction temperature

More information

MOC205-M MOC206-M MOC207-M MOC208-M

MOC205-M MOC206-M MOC207-M MOC208-M DESCRIPTION These devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector, in a surface mountable, small outline, plastic package.

More information

ZCRMZN00100KITG. Crimzon Development Board Kit. Product User Guide. Introduction. Kit Contents. Applying Power to Development Board

ZCRMZN00100KITG. Crimzon Development Board Kit. Product User Guide. Introduction. Kit Contents. Applying Power to Development Board ZRMZN0000KITG rimzon evelopment oard Kit PUG000-0 Product User Guide Introduction Zilog s ZRMZN0000KITG rimzon evelopment oard Kit is designed for use as a target with the rimzon In-ircuit Emulator (ZRMZNIE0ZEMG).

More information

www. ElectricalPartManuals. com Flexitest Switch Assemblies Type FT-19R and FT-19RX INTL APPLICATION

www. ElectricalPartManuals. com Flexitest Switch Assemblies Type FT-19R and FT-19RX INTL APPLICATION Effective: January 2004 Supersedes, dated June 1998 APPLICATION QUALITY FEATURES Descriptive Bulletin 41-078INTL Flexitest Switch Assemblies Type The type FT-19R (standard length) and FT-19RX (extended

More information

JIEJIE MICROELECTRONICS CO., Ltd

JIEJIE MICROELECTRONICS CO., Ltd JIJI MIROLTRONIS O., Ltd T0610/T060/T0635/T0650 Series 6 TRIs Rev.3.0 SRIPTION: T06xx series triacs of high junction temperature with high dv/dt rate with strong resistance to electromagnetic interference

More information

Chip tantalum capacitors (Fail-safe open structure type)

Chip tantalum capacitors (Fail-safe open structure type) TCFG0J106M8R Chip tantalum capacitors (Fail-safe open structure type) TCFG Series Case Features 1) Safety design by open function built - in. 2) Wide capacitance range 3) Screening by thermal shock. Dimensions

More information

Negligible switching losses. Low forward voltage drop Surface mount miniature packages Avalanche rated ECOPACK 2 compliant

Negligible switching losses. Low forward voltage drop Surface mount miniature packages Avalanche rated ECOPACK 2 compliant Datasheet 60 V - 1 power Schottky rectifier K Features Negligible switching losses K SM K DO-41 Low forward voltage drop Surface mount miniature packages valanche rated ECOPCK 2 compliant K STmite flat

More information

P-Channel 60-V (D-S) MOSFET

P-Channel 60-V (D-S) MOSFET New Product TP6KL/B5KL P-Channel 6-V (-) MOFET PROUCT UMMARY V (BR)(min) (V) r (on) ( ) V G(th) (V) (A) 6 @ V G = V.7 6 to. @ V G =.5 V. FEATURE TrenchFET Power MOFET E Protected: V APPLICATION rivers:

More information

Features A, -25 V. R DS(ON) Symbol Parameter Ratings Units

Features A, -25 V. R DS(ON) Symbol Parameter Ratings Units FG34P igital FET, P-Channel July FG34P General escription This P-Channel enhancement mode field effect transistor is produced using Fairchild Semiconductor s proprietary, high cell density, MOS technology.

More information

MPT Multifunction Multiport

MPT Multifunction Multiport MP Multifunction Multiport Maximum pressure 8 bar F l o w r a t e s t o 0 0 l / m i n echnical data housing (Materials) ead: luminium Cover: Nylon Bowl: Nylon Pressure Working pressure: 8 bar emperature

More information

TIL308, TIL309 NUMERIC DISPLAYS WITH LOGIC

TIL308, TIL309 NUMERIC DISPLAYS WITH LOGIC SOLI-STTE ISPLYS WITH INTEGRL TTL MSI IRUIT HIP FOR USE IN LL SYSTEMS REQUIRING ISPLY OF B T 6,9-mm (0.270-Inch) haracter Height TIL308 Has Left ecimal TIL309 Has Right ecimal Easy System Interface Wide

More information

Headers for all pins sorted by pin no. (unpopulated) TSX-1001 Cortex-M0. Oscillator 44MHz

Headers for all pins sorted by pin no. (unpopulated) TSX-1001 Cortex-M0. Oscillator 44MHz V V Way type onnector US Type onnector x.v.v Regulators Headers for all pins sorted by pin no. (unpopulated) Prototyping area with power and GNs (unpopulated) RS Transceiver US to Serial onverter Expansion

More information

Table 3: Absolute Ratings (limiting values) Symbol Parameter Value Unit I T(RMS)

Table 3: Absolute Ratings (limiting values) Symbol Parameter Value Unit I T(RMS) TYN61M 1 SCR Table 1: Main Features Symbol Value Unit I T(RMS) 1 V DRM /V RRM 6 V I T (min./max.) 1.5 / 5 m K DESCRIPTION The TYN61M SCR is suitable to fit modes of control found in applications such as

More information

1 h 9 e $ s i n t h e o r y, a p p l i c a t i a n

1 h 9 e $ s i n t h e o r y, a p p l i c a t i a n T : 99 9 \ E \ : \ 4 7 8 \ \ \ \ - \ \ T \ \ \ : \ 99 9 T : 99-9 9 E : 4 7 8 / T V 9 \ E \ \ : 4 \ 7 8 / T \ V \ 9 T - w - - V w w - T w w \ T \ \ \ w \ w \ - \ w \ \ w \ \ \ T \ w \ w \ w \ w \ \ w \

More information

Designing Information Devices and Systems I Spring 2018 Lecture Notes Note 16

Designing Information Devices and Systems I Spring 2018 Lecture Notes Note 16 EECS 16A Designing Information Devices an Systems I Spring 218 Lecture Notes Note 16 16.1 Touchscreen Revisite We ve seen how a resistive touchscreen works by using the concept of voltage iviers. Essentially,

More information

Coulomb s Law and Coulomb s Constant

Coulomb s Law and Coulomb s Constant Pre-Lab Quiz / PHYS 224 Coulomb s Law and Coulomb s Constant Your Name: Lab Section: 1. What will you investigate in this lab? 2. Consider a capacitor created when two identical conducting plates are placed

More information

EE 330 Lecture 16. MOSFET Modeling CMOS Process Flow

EE 330 Lecture 16. MOSFET Modeling CMOS Process Flow EE 330 Lecture 16 MOSFET Modeling CMOS Process Flow Model Extensions 300 Id 250 200 150 100 50 300 0 0 1 2 3 4 5 Vds Existing Model 250 200 Id 150 100 50 Slope is not 0 0 0 1 2 3 4 Actual Device Vds Model

More information

Over Current Protection Circuits Voltage controlled DC-AC Inverters Maximum operating temperature of 175 C

Over Current Protection Circuits Voltage controlled DC-AC Inverters Maximum operating temperature of 175 C Description United Silicon Carbide, Inc offers the xj series of high-performance SiC normally-on JFET transistors. This series exhibits ultra-low on resistance (R DS(ON) ) and gate charge (Q G ) allowing

More information

IXTN660N04T4. TrenchT4 TM Power MOSFET = 40V = 660A. 0.85m. Advance Technical Information

IXTN660N04T4. TrenchT4 TM Power MOSFET = 40V = 660A. 0.85m. Advance Technical Information TrenchT4 TM Power MOFET Advance Technical Information IXTN66N4T4 D V D = 4V I D25 = 66A R D(on).85m N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode G minibloc, OT-227 E53432 ymbol Test

More information

Designing Information Devices and Systems I Spring 2017 Official Lecture Notes Note 13

Designing Information Devices and Systems I Spring 2017 Official Lecture Notes Note 13 EES 6A Designing Information Devices an Systems I Spring 27 Official Lecture Notes Note 3 Touchscreen Revisite We ve seen how a resistive touchscreen works by using the concept of voltage iviers. Essentially,

More information

IXTN200N10L2 V DSS = 100V = 178A. Linear L2 TM Power MOSFET w/ Extended FBSOA. Advance Technical Information

IXTN200N10L2 V DSS = 100V = 178A. Linear L2 TM Power MOSFET w/ Extended FBSOA. Advance Technical Information Advance Technical Information Linear L2 TM Power MOSFET w/ Extended FBSOA N-Channel Enhancement Mode Guaranteed FBSOA Avalanche Rated IXTN2N1L2 S = V I D25 = 178A R DS(on) 11mΩ minibloc, SOT-227 E153432

More information

Balcony balustrades using the SG12 laminated glass system: PAGE 1 (SG12FF010717) Structural Calculations for SG12 System balustrades using 21.5mm laminated toughened glass without the need for a handrail

More information

Solve problems involving tangents to a circle. Solve problems involving chords of a circle

Solve problems involving tangents to a circle. Solve problems involving chords of a circle 8UNIT ircle Geometry What You ll Learn How to Solve problems involving tangents to a circle Solve problems involving chords of a circle Solve problems involving the measures of angles in a circle Why Is

More information

Over Current Protection Circuits Voltage controlled DC-AC Inverters Maximum operating temperature of 175 C

Over Current Protection Circuits Voltage controlled DC-AC Inverters Maximum operating temperature of 175 C Description xj SiC Series 8mW - 12V SiC Normally-On JFET UJN128Z Die Form United Silicon Carbide, Inc offers the xj series of high-performance SiC normally-on JFET transistors. This series exhibits ultra-low

More information

October Suzhou - Shenzhen, China. Archive TestConX - Image: Breath10/iStock

October Suzhou - Shenzhen, China. Archive TestConX - Image: Breath10/iStock October 23-25 2018 Suzhou - Shenzhen, China Archive 2018 TestConX - Image: Breath10/iStock COPYRIGHT NOTICE The presentation(s)/poster(s) in this publication comprise the Proceedings of the 2018 TestConX

More information

The Effect of Air Resistance Harvey Gould Physics 127 2/06/07

The Effect of Air Resistance Harvey Gould Physics 127 2/06/07 1 The Effect of Air Resistance Harvey Gould Physics 127 2/06/07 I. INTRODUCTION I simulated the motion of a falling body near the earth s surface in the presence of gravity and air resistance. I used the

More information

IXTN660N04T4. TrenchT4 TM Power MOSFET = 40V = 660A. 0.85m. Advance Technical Information

IXTN660N04T4. TrenchT4 TM Power MOSFET = 40V = 660A. 0.85m. Advance Technical Information TrenchT4 TM Power MOFET Advance Technical Information D V D = 4V I D25 = 66A R D(on).85m N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode G minibloc, OT-227 E53432 ymbol Test Conditions

More information

V DSS R DS(on) max I D. 100V GS = 10V 7.3A. 58 P A = 25 C Maximum Power Dissipation 2.5 Linear Derating Factor

V DSS R DS(on) max I D. 100V GS = 10V 7.3A. 58 P A = 25 C Maximum Power Dissipation 2.5 Linear Derating Factor P - 95288 HEXFET Power MOSFET pplications High frequency C-C converters Lead-Free l l V SS R S(on) max I 0V 22m:@V GS = V 7.3 Benefits l Low Gate to rain Charge to Reduce Switching Losses l Fully Characterized

More information

Advance Technical Information IXFN110N85X V DSS. High Power Density Easy to Mount Space Savings BV DSS. = 3mA 850 V. = 8mA

Advance Technical Information IXFN110N85X V DSS. High Power Density Easy to Mount Space Savings BV DSS. = 3mA 850 V. = 8mA Advance Technical Information X-Class HiPerFET TM Power MOFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFN11N85X V D = 85V I D25 = 11A R D(on) 33m D minibloc, OT-227 E153432 ymbol

More information

ROLLS ROYCE GHOST ROLLS ROYCE. AN.27.B + AN27.03 Ou/Or/Oder/O AN.34 A B M8S MT10 SVN FIG. 1 B-1 C-1 F-2 B-1 C-1 E-2 E-2 K-1

ROLLS ROYCE GHOST ROLLS ROYCE. AN.27.B + AN27.03 Ou/Or/Oder/O AN.34 A B M8S MT10 SVN FIG. 1 B-1 C-1 F-2 B-1 C-1 E-2 E-2 K-1 ROS ROY GOST RG U VIU ORIG O T VI VRRUG S RZUGS ORGGIO VIOO VIUO.. +.03.3 G M MZ MZ 0 TV 00 - MZ 0 TV 00 - MT0 MZ 0-0 MZ - 3 8 MZ 0 TV 00-3 MZ 0 TV 00 - MZ 0 - - 3 8 MZ 0 - MZ - 0-5 - MZ 0 - - - MZ 0-8

More information

Product Information. Standard Clock Dials. with case and backlighting options

Product Information. Standard Clock Dials. with case and backlighting options Standard lock s with case and backlighting options Document ref: Std s Issue date: 02 March 2018 Product Information The addition of a clock to any building will enhance its appearance and raise its profile

More information

Automotive-grade 400 V internally clamped IGBT E SCIS 320 mj

Automotive-grade 400 V internally clamped IGBT E SCIS 320 mj STGB25N40LZAG, STGD25N40LZAG Datasheet Automotive-grade 400 V internally clamped IGBT E SCIS 320 mj Features TAB D 2 PAK 2 1 3 TAB 2 1 DPAK 3 AEC-Q101 qualified SCIS energy of 320 mj @ T J = 25 C Parts

More information

K04 TYPE -40 C +85 C 20000H

K04 TYPE -40 C +85 C 20000H K04 TYPE -40 C +85 C 20000H Extended life. Surge-proof capacitor in aluminium can with insulation sleeve. To be mounted with ring clips or with threaded stud. Designed for high resistances to voltage spikes.

More information

THAT Corporation. QSC Digital Cinema Monitor DCM-2/DCM-3 Monitor Board

THAT Corporation. QSC Digital Cinema Monitor DCM-2/DCM-3 Monitor Board anyone without the written permission of THT orporation. escription ate 00 Released // 0 Per EO # /0/ pproved ataports,,, -00.SH VMON & IMON Input Select of -00.SH UNLESS OTHERWISE NOTE: ataports E,F,G,H

More information

SMPS MOSFET. V DSS R DS(on) max(mw) I D

SMPS MOSFET. V DSS R DS(on) max(mw) I D P- 9330F SMPS MOSFET IRF743 HEXFET Power MOSFET pplications l High frequency C-C converters V SS R S(on) max(mw) I 30V @V GS = V 2 Benefits l Low Gate to rain Charge to Reduce Switching Losses l Fully

More information

STTH10R04. High efficiency rectifier. Description. Features

STTH10R04. High efficiency rectifier. Description. Features STTH1R4 High efficiency rectifier Datasheet - production data Features K A A NC D 2 PAK K Ultrafast recovery Low power losses High surge capability Low leakage current High junction temperature ECOPACK

More information

Green Product (RoHS compliant) AEC Qualified

Green Product (RoHS compliant) AEC Qualified 1 Green Product (RoHS compliant) AEC Qualified V DS E3180A G63-7-1 E3230 7 G202 PG-TO263-7-1 PG-TO220-7-12 Data Sheet 1 Rev.1.3, 2013-07-26 Drain source voltage V DS Drain-gate voltage R GS k V DGR Gate

More information

EE 330 Lecture 16. MOS Device Modeling p-channel n-channel comparisons Model consistency and relationships CMOS Process Flow

EE 330 Lecture 16. MOS Device Modeling p-channel n-channel comparisons Model consistency and relationships CMOS Process Flow EE 330 Lecture 16 MOS Device Modeling p-channel n-channel comparisons Model consistency and relationships CMOS Process Flow Review from Last Time Operation Regions by Applications Id I D 300 250 200 150

More information

b y G a r s i d e S i g n s & D i s p l a y s ( E s t a b l i s h e d )

b y G a r s i d e S i g n s & D i s p l a y s ( E s t a b l i s h e d ) b G S g & D l ( E b l 1 9 4 8 ) Fllb DDu TCu kf ug OV wgf JSlPg. Su-z, g lb. bwlfg T: BC El V l ff (NE f P Dugl) 1 ww l l 1950 b R G. (NOTE: Bk, BC El w l ll ul l) B: Sg v b Wlf G. Ml: Ll w lg f R G ug

More information

Chip tantalum capacitors (Fail-safe open structure type)

Chip tantalum capacitors (Fail-safe open structure type) TCFG1C6M8R Chip tantalum capacitors (Fail-safe open structure type) TCFG Series Case Features 1) Safety design by open function built - in. 2) Wide capacitance range 3) Screening by thermal shock. Dimensions

More information

STPSC15H V power Schottky silicon carbide diode. Datasheet. Features A. Description. No or negligible reverse recovery

STPSC15H V power Schottky silicon carbide diode. Datasheet. Features A. Description. No or negligible reverse recovery Datasheet 1200 V power Schottky silicon carbide diode Features A K No or negligible reverse recovery K K Switching behavior independent of temperature Robust high voltage periphery Operating from -40 C

More information

4-PIN PHOTOTRANSISTOR OPTOCOUPLERS

4-PIN PHOTOTRANSISTOR OPTOCOUPLERS PACKAGE HAA84 SCHEMATIC 4 COLLECTOR 4 2 3 EMITTER DESCRIPTION The HAA84 Series consists of two gallium arsenide infrared emitting diodes, connected in inverse parallel, driving a single silicon phototransistor

More information

Features. 15 A, 30 V. R DS(ON) = 5.5 V GS = 10 V R DS(ON) = 8 V GS = 4.5 V. T A=25 o C unless otherwise noted

Features. 15 A, 30 V. R DS(ON) = 5.5 V GS = 10 V R DS(ON) = 8 V GS = 4.5 V. T A=25 o C unless otherwise noted F77A N-Channel Logic Level PowerTrench MOFET January F77A General escription This N-Channel Logic Level MOFET is produced using Fairchild emiconductor s advanced PowerTrench process that has been especially

More information

n ARTICLE INFO *Corresponding Author

n ARTICLE INFO *Corresponding Author I J L T V m I ( J ) LT jm: www m/ j O m B D M T q T T C D Z D * C I m O m U B B V @ J Z K OT C HE P TY L I D V BSTRCT M B C I m O m U B B V M M mm C I m O m U B B V KEYWORDS T D m G m F L q T m w C q m

More information

SMPS MOSFET. Storage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case )

SMPS MOSFET. Storage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case ) pplications Reset Switch for ctive Clamp Reset C-C converters Lead-Free l l SMPS MOSFET P - 95293 IRF626PbF HEXFET Power MOSFET V SS R S(on) max I -50V 0.240W@V GS =-V -2.2 Benefits l Low Gate to rain

More information

EE 330 Lecture 16. Devices in Semiconductor Processes. MOS Transistors

EE 330 Lecture 16. Devices in Semiconductor Processes. MOS Transistors EE 330 Lecture 16 Devices in Semiconductor Processes MOS Transistors Review from Last Time Model Summary I D I V DS V S I B V BS = 0 0 VS VT W VDS ID = μcox VS VT VDS VS V VDS VS VT L T < W μc ( V V )

More information

Flow rates to 590 l/min

Flow rates to 590 l/min LM 400-40 - 4 Maximum pressure bar Flow rates to 590 l/min Technical data housing (Materials) ead: nodized luminium ousing: nodized luminium Manifolds: Steel - Painted black ypass valve: Steel -way ball

More information

Polyethylene Chemical Resistance. ARM Fall Conference 2015, Denver CO. Carmine D Agostino, Technical Service and Application Development

Polyethylene Chemical Resistance. ARM Fall Conference 2015, Denver CO. Carmine D Agostino, Technical Service and Application Development Polyethylene Chemical Resistance Workshop ARM Fall Conference 2015, Denver CO Carmine D Agostino, Technical Service and Application Development 1 Contents Introduction Definition Chemical Effects on Polyethylene

More information

List Of Colored Glass

List Of Colored Glass DELN SCHOTT HOYA DELN SCHOTT HOYA ZJB220 UV-22 JB470 GG475 Y-46 ZJB240 WG230 JB490 HH495 Y-48 ZJB260 JB510 GG515 Y-50 ZJB280 WG280 UV-28 CB535 GG530 O-54 ZJB300 WG295 UV-30 CB550 GG550 ZJB320 WG320 UV32

More information

T610T-8FP. 6 A logic level Triac. Description. Features. Applications

T610T-8FP. 6 A logic level Triac. Description. Features. Applications 6 A logic level Triac Description Datasheet production data Available in through-hole fullpack package, the Triac can be used for the on/off or phase angle control function in general purpose AC switching.

More information

Electronics II. Midterm #1

Electronics II. Midterm #1 The University of Toledo EECS:3400 Electronics I su3ms_elct7.fm Section Electronics II Midterm # Problems Points. 5. 6 3. 9 Total 0 Was the exam fair? yes no The University of Toledo su3ms_elct7.fm Problem

More information

PHOTO SCR OPTOCOUPLERS

PHOTO SCR OPTOCOUPLERS PACKAGE SCHEMATIC 6 6 ANODE 6 GATE CATHODE 2 5 ANODE N/C 3 4 CATHODE 6 DESCRIPTION The HC series consists of a gallium-arsenide infrared emitting diode optically coupled with a light activated silicon

More information

USBF USBF.prj. Title: Section: USBF-01. B Designer: Brian Ashelin Date: COMMUNICATIONS COMMUNICATIONS ADC ADC INPUT VCA 4 PAGE 7 PAGE 1 PAGE 5 PAGE 2

USBF USBF.prj. Title: Section: USBF-01. B Designer: Brian Ashelin Date: COMMUNICATIONS COMMUNICATIONS ADC ADC INPUT VCA 4 PAGE 7 PAGE 1 PAGE 5 PAGE 2 INPUT V INPUT V PGE PGE OMMUNITIONS OMMUNITIONS PGE INPUT V INPUT V PGE INPUT V INPUT V PGE POWER ISTRIUTION POWER ISTRIUTION PGE INPUT V INPUT V PGE LOK ISTRIUTION LOK ISTRIUTION PGE USF USF.prj 0th ve.

More information

Features. 175 C maximum junction temperature rating. TO-263AB FDB Series. TA=25 o C unless otherwise noted

Features. 175 C maximum junction temperature rating. TO-263AB FDB Series. TA=25 o C unless otherwise noted FP667AL/FB667AL N-Channel Logic Level PowerTrench MOFET eneral escription This N-Channel Logic Level MOFET has been designed specifically to improve the overall efficiency of C/C converters using either

More information

Model TS105-10L5.5mm Thermopile Sensor

Model TS105-10L5.5mm Thermopile Sensor Thermopile IR-Sensor For Contactless Temperature Measurement Single Element For Industrial Pyrometers Silicon Lens Accurate Reference Sensor DESCRIPTION Thermopiles are mainly used for contactless temperature

More information

Vortex Flow Meters. RVL Series Vortex Flow Meter

Vortex Flow Meters. RVL Series Vortex Flow Meter TM Vortex Meters RVL Series Vortex Meter pplications: Water/Wastewater I Water: Semiconductor, Institutional I Water Skids Semiconductor Equipment Slurry hemical Processing RINE FEERTE IN. ISO 900 : 000

More information

HW 5 posted due in two weeks Lab this week Midterm graded Project to be launched in week 7

HW 5 posted due in two weeks Lab this week Midterm graded Project to be launched in week 7 HW 5 posted due in two weeks Lab this week Midterm graded Project to be launched in week 7 2 What do digital IC designers need to know? 5 EE4 EECS4 6 3 0< V GS - V T < V DS Pinch-off 7 For (V GS V T )

More information

Model TS318-11C55 Thermopile Sensor

Model TS318-11C55 Thermopile Sensor Thermopile IR-Sensor For Contactless Temperature Measurement Single Element Small Package for Ear Thermometer High Signal Flat Filter Accurate Reference Sensor DESCRIPTION Thermopiles are mainly used for

More information

Single N-Channel Enhancement Mode Field Effect Transistor. Features. TA=25 o C unless otherwise noted. Symbol Parameter Ratings Units

Single N-Channel Enhancement Mode Field Effect Transistor. Features. TA=25 o C unless otherwise noted. Symbol Parameter Ratings Units F94 ingle N-Channel Enhancement Mode Field Effect Transistor April F94 General escription This N-Channel Logic Level MOFET is produced using Fairchild emiconductor s advanced PowerTrench process that has

More information

8.1 Laws. Purpose. Concept and Skill Check. Materials. Procedure EXPERIMENT DATE : PERIOD NAME. Plot a planetary orbit and apply Kepler s Laws.

8.1 Laws. Purpose. Concept and Skill Check. Materials. Procedure EXPERIMENT DATE : PERIOD NAME. Plot a planetary orbit and apply Kepler s Laws. ATE : PERIO NAME EXPERIMENT 8.1 Laws Purpose Plot a planetary orbit and apply Kepler s Laws. oncept and kill heck The motion of the planets has intrigued astronomers since they first gazed at the stars,

More information

Over current protection circuits Voltage controlled DC-AC inverters Maximum operating temperature of 175 C

Over current protection circuits Voltage controlled DC-AC inverters Maximum operating temperature of 175 C Description United Silicon Carbide, Inc offers the high-performance G3 SiC normallyon JFET transistors. This series exhibits ultra-low on resistance (R DS(ON) ) and gate charge (Q G ) allowing for low

More information

STATE OF TEXAS DEPARTMENT OF TRANSPORTATION DALLAS DISTRICT DESIGN SCHEMATIC

STATE OF TEXAS DEPARTMENT OF TRANSPORTATION DALLAS DISTRICT DESIGN SCHEMATIC 156 156 35W 114 377 288 35 1830 em 377 1830 288 2499 455 2931 V 1385 X P P.. L P V. L 6 P 2017 (083) H 35 PH H L UY H X LL L L H 1 Z 0196 01 X H L LH P = LL H. L : 0196-01- H 35 / LP 288 UY L: HL /YHLL

More information

Description. Table 1. Device summary (1) Lead finish

Description. Table 1. Device summary (1) Lead finish Aerospace 45 V power Schottky rectifier Datasheet - production data Description A K K his power Schottky rectifier is designed and packaged to comply with the ESCC5000 specification for aerospace products.

More information

The gradient of the radius from the centre of the circle ( 1, 6) to (2, 3) is: ( 6)

The gradient of the radius from the centre of the circle ( 1, 6) to (2, 3) is: ( 6) Circles 6E a (x + ) + (y + 6) = r, (, ) Substitute x = and y = into the equation (x + ) + (y + 6) = r + + + 6 = r ( ) ( ) 9 + 8 = r r = 90 = 0 b The line has equation x + y = 0 y = x + y = x + The gradient

More information

VA10S Series VA10S VA10S- Nitto Instruments Co.,ltd. Glass Rotameters. Specifications. Materials

VA10S Series VA10S VA10S- Nitto Instruments Co.,ltd. Glass Rotameters. Specifications. Materials V0S Series Nitto Instruments o.,ltd V0S Glass rotameter are the new products of our company, compared with the other domestic products of the same type, it has advantages of high measuring precision,good

More information

CITY OF LAS CRUCES INFRASTRUCTURE/CIP POLICY REVIEW COMMITTEE

CITY OF LAS CRUCES INFRASTRUCTURE/CIP POLICY REVIEW COMMITTEE 1 5 6 7 8 9 11 1 1 1 15 16 17 18 19 0 1 6 7 8 9 0 1 5 6 7 8 9 0 1 ITY OF L U IFTUTU/I OLIY VI OITT T fwg f g f f L - If/I w f b 17, 018 :0.., f L,, bg (f 007-), 700, L, w x. B T: Gg,, G g, / T, 5 J, g,

More information

PRCP-MSMF Series - Polymer Resettable Circuit Protectors

PRCP-MSMF Series - Polymer Resettable Circuit Protectors *RoHS COMPLINT & EC PPROVE 9 Features Compliant with EC-Q00 Rev-C- Stress Test Qualification for Passive Components in utomotive pplications 00 % electrically compatible with all previous generations of

More information

4-PIN PHOTOTRANSISTOR OPTOCOUPLERS

4-PIN PHOTOTRANSISTOR OPTOCOUPLERS PACKAGE HAA84 SCHEMATIC 4 COLLECTOR 4 2 3 EMITTER DESCRIPTION The HAA84 Series consists of two gallium arsenide infrared emitting diodes, connected in inverse parallel, driving a single silicon phototransistor

More information

TIL308, TIL309 NUMERIC DISPLAYS WITH LOGIC

TIL308, TIL309 NUMERIC DISPLAYS WITH LOGIC SOLI-STTE ISPLYS WITH INTEGRL TTL MSI IRUIT HIP FOR USE IN LL SYSTEMS REQUIRING ISPLY OF B T 6,9-mm (0.270-Inch) haracter Height TIL308 Has Left ecimal TIL309 Has Right ecimal Easy System Interface Wide

More information

ST2L Very low quiescent current dual voltage regulator. Description. Features. Applications

ST2L Very low quiescent current dual voltage regulator. Description. Features. Applications Very low quiescent current dual voltage regulator Description Datasheet - production data Features DFN8 (5x6 mm) V O1 : fixed V O2 : adjustable from 1.25 to V I - V DROP Guaranteed current of output 1:

More information

Description. Part numbers. AB version C version Output voltage LD2980ABM30TR LD2980ABM33TR LD2980CM33TR 3.3 V LD2980ABM50TR LD2980CM50TR 5.

Description. Part numbers. AB version C version Output voltage LD2980ABM30TR LD2980ABM33TR LD2980CM33TR 3.3 V LD2980ABM50TR LD2980CM50TR 5. Features SOT23-5L Stable with low ESR ceramic capacitors Ultra low dropout voltage (0.12 V typ. at 50 ma load, 7 mv typ. at 1 ma load) Very low quiescent current (80 µa typ. at no load in on mode; max

More information

EE 330 Lecture 6. Improved Switch-Level Model Propagation Delay Stick Diagrams Technology Files

EE 330 Lecture 6. Improved Switch-Level Model Propagation Delay Stick Diagrams Technology Files EE 330 Lecture 6 Improved witch-level Model Propagation elay tick iagrams Technology Files Review from Last Time MO Transistor Qualitative iscussion of n-channel Operation Bulk ource Gate rain rain G Gate

More information

BTEL5000 / PTUL5000 Series Precision very low differential pressure transmitters

BTEL5000 / PTUL5000 Series Precision very low differential pressure transmitters FETURES to, to differential pressure...6 or... m Precision temperature compensated and calibrated Rugged aluminium housing Female /8" BSP and /8" NPT fittings MEDI CMPTIBILITY Pressure inlet: Non-corrosive,

More information

Over current protection circuits Voltage controlled DC-AC inverters Maximum operating temperature of 175 C

Over current protection circuits Voltage controlled DC-AC inverters Maximum operating temperature of 175 C Description United Silicon Carbide, Inc offers the high-performance G3 SiC normallyon JFET transistors. This series exhibits ultra-low on resistance (R DS(ON) ) and gate charge (Q G ) allowing for low

More information

Over current protection circuits Voltage controlled DC-AC inverters Maximum operating temperature of 175 C

Over current protection circuits Voltage controlled DC-AC inverters Maximum operating temperature of 175 C Description United Silicon Carbide, Inc offers the high-performance G3 SiC normallyon JFET transistors. This series exhibits ultra-low on resistance (R DS(ON) ) and gate charge (Q G ) allowing for low

More information

NP-180R. U.L. file number E98983

NP-180R. U.L. file number E98983 New: 2018/09/12 Flame retardant copper clad laminate NP-180R High Tg 175 (DSC) Excellent dimensional stability through-hole reliability Excellent electrical, chemical and heat resistance properties IPC-4101E

More information

PLW7070* Series and PLW3535* Series I2LED High Power LED Product Application Note

PLW7070* Series and PLW3535* Series I2LED High Power LED Product Application Note PLW7070* Series and PLW3535* Series I2LED High Power LED Product Application Note Page 2 of 12 This application note describes Plessey s MaGIC TM (Manufactured on GaN-on-Si I/C) technology LED die and

More information

Air Handling Unit. Konvent

Air Handling Unit. Konvent Air Handling Unit Konvent Unbeatable advantages Konvent at a glance Technical Details Mistral S control Product overview Dimensions Benefits for you! Gentle temperature control To protect buildings and

More information

Maximum pressure 80 bar

Maximum pressure 80 bar Maximum pressure 80 bar F l o w r a t e s t o 0 0 l / m i n LMP 0 Maximum pressure 80 bar F l o w r a t e s t o 6 0 l / m i n Technical data LMP 0 Filter housing (Materials) Head: luminium Housing: ataphoresis

More information

Features. Description. Table 1. Device summary. Order code Marking Packages Packing. STGD19N40LZ GD19N40LZ DPAK Tape and reel

Features. Description. Table 1. Device summary. Order code Marking Packages Packing. STGD19N40LZ GD19N40LZ DPAK Tape and reel Automotive-grade 390 V internally clamped IGBT E SCIS 180 mj Features Datasheet - production data TAB DPAK 1 3 AEC-Q101 qualified 180 mj of avalanche energy @ T C = 150 C, L = 3 mh ESD gate-emitter protection

More information

Test Report No.T TY Date: JUL 03, 2017 Page 1 of 6

Test Report No.T TY Date: JUL 03, 2017 Page 1 of 6 Test Report T51710233976TY Date: JUL 03, 2017 Page 1 of 6 SPIN MASTER RM. 1113, 11/F, CHINACHEM GOLDEN PLAZA, 77 MODY ROAD, TST EAST,KOWLOON, HONG KONG The following samples were submitted and identified

More information

Introduction RUSSIAN CONNECTORS

Introduction RUSSIAN CONNECTORS RUSSIN CONNECTORS Introduction mphenol Russian Series are of threaded coupled connectors designed to meet the operating requirements of Indian Defense Standard Joint Services Specifications JSS 00, issued

More information

Integrated Circuits & Systems

Integrated Circuits & Systems Federal University of Santa Catarina Center for Technology Computer Science & Electronics Engineering Integrated Circuits & Systems INE 5442 Lecture 10 MOSFET part 1 guntzel@inf.ufsc.br ual-well Trench-Isolated

More information

ECE 342 Electronic Circuits. 3. MOS Transistors

ECE 342 Electronic Circuits. 3. MOS Transistors ECE 342 Electronic Circuits 3. MOS Transistors Jose E. Schutt-Aine Electrical & Computer Engineering University of Illinois jschutt@emlab.uiuc.edu 1 NMOS Transistor Typically L = 0.1 to 3 m, W = 0.2 to

More information

Time allowed: The total time for Section A and Section B of this paper is 1 hour 30 minutes

Time allowed: The total time for Section A and Section B of this paper is 1 hour 30 minutes General ertificate of Education June 7 dvanced Level Examination PHYSIS (SPEIFITION ) Unit 4 Waves, Fields and Nuclear Energy P4 Section Thursday 14 June 7 9. am to 1.3 am For this paper you must have:!

More information

Chapter 3 - The Concept of Differentiation

Chapter 3 - The Concept of Differentiation alculus hapter - The oncept o Dierentiation Applications o Dierentiation opyright 00-004 preptests4u.com. All Rights Reserved. This Academic Review is brought to you ree o charge by preptests4u.com. Any

More information

Esterification in a PFR with Aspen Plus V8.0

Esterification in a PFR with Aspen Plus V8.0 Esterification in a PFR with Aspen Plus V8.0 1. Lesson Objectives Use Aspen Plus to determine whether a given reaction is technically feasible using a plug flow reactor. 2. Prerequisites Aspen Plus V8.0

More information

Chapter 2--Asset and Liability Valuation and Income Measurement

Chapter 2--Asset and Liability Valuation and Income Measurement 2--A Lbly Vl I M S: 1. W f fllwg bl f vl? A. Eq B. L. Iv Mkbl S D. Igbl A 2. Wy g x x ff f l x gv? A. T g ff w gz y y b bj x. B. T IRS l f llg.. Fl x. D. T IRS q fl f x. 3. Sl qy f w : A. A, lbl, b l.

More information

ATE A TEC Module

ATE A TEC Module TEC Modules TEC Module Figure. The Photo of Actual FEATURES Maximum Input Voltage:. V Low Cost Long Life Time % Lead (Pb)-free and RoHS Compliant APPLICATIONS Regulate the temperature of the target object

More information

IXFN56N90P. = 900V = 56A 145m 300ns. Polar TM HiPerFET TM Power MOSFET V DSS I D25. R DS(on) t rr

IXFN56N90P. = 900V = 56A 145m 300ns. Polar TM HiPerFET TM Power MOSFET V DSS I D25. R DS(on) t rr Polar TM HiPerFET TM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier S I D25 R DS(on) t rr = 9V = 56A 145m ns Symbol Test Conditions Maximum Ratings S = 25 C to 1 C 9 V

More information

15ETL06PbF 15ETL06FPPbF

15ETL06PbF 15ETL06FPPbF Ultra-low V F Hyperfast Rectifier for Discontinuous Mode PFC Features Benchmark Ultra-low Forward Voltage Drop Hyperfast Recovery Time Low Leakage Current 75 C Operating Junction Temperature Fully Isolated

More information