PASS-TRANSISTOR LOGIC. INEL Fall 2014
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1 PASS-TRANSISTOR LOGIC INEL Fall 2014
2 Figure 15.5 Conceptual pass-transistor logic gates. (a) Two switches, controlled by the input variables B and C, when connected in series in the path between the input node to which an input variable A is applied and the output node (with an implied load to ground) realize the function Y = ABC. (b) When the two switches are connected in parallel, the function realized is Y = A(B + C).
3 Figure 15.6 Two possible implementations of a voltage-controlled switch connecting nodes A and Y: (a) single NMOS transistor and (b) CMOS transmission gate.
4 Figure 15.7 A basic design requirement of PTL circuits is that every node have, at all times, a low resistance path to either ground or V DD. Such a path does not exist in (a) when B is low and S 1 is open. It is provided in (b) through switch S 2.
5 Figure 15.8
6
7 Example Consider the NMOS switch shown in figs and 15.9 for which µ n C ox = 50µA/V 2, µ p C ox = 20µA/V 2, V t0 =1V, =0.5 V,2 f =0.6V and V DD = 5V. Let the transistor have W/L =4µm/2µm, and assume C = 50fF. 1. For v i high, (fig. 15.8) find V OH. 2. If the output feeds a CMOS inverter whose (W/L) p = 2.5(W/L) n = 10µm/2µm, find the static current in the inverter and its power dissipation when its input is the value found in (1). Find the inverter output voltage. 3. Find t PLH. 4. Find t PHL for the case with v i going low (fig. 15.9). 5. Find t p.
8 Example Consider the NMOS switch shown in figs and 15.9 for which µ n C ox = 50µA/V 2, µ p C ox = 20µA/V 2, V t0 =1V, =0.5 V,2 f =0.6V and V DD = 5V. Let the transistor have W/L =4µm/2µm, and assume C = 50fF. 1. For v i high, (fig. 15.8) find V OH. 2. If the output feeds a CMOS inverter whose (W/L) p = 2.5(W/L) n = 10µm/2µm, find the static current in the inverter and its power dissipation when its input is the value found in (1). Find the inverter output voltage. 3. Find t PLH. 4. Find t PHL for the case with v i going low (fig. 15.9). 5. Find t p. Answer: (1) VOH= 3.4V. (2) idp = 18μA, PD = 90μW, vo = (3) id(0) = 800μA, id(tplh) = 50μA, id, AV = 425μA, tplh = C(VDD/2)/iD, AV = 0.29ns. (4) tphl = 0.17ns. (5) tp = 0.23ns.
9 Figure The CMOS transmission gate and its circuit symbol.
10 Figure 15.12
11 Transmission gate resistance empirical formula (for submicron technologies) (eq ) R TG = 12.5 (W/L) n k
12 Figure (a) A transmission gate connects the output of a CMOS inverter to the input of another. (b) Equivalent circuit for the purpose of analyzing the propagation delay of the circuit in (a).
13 Elmore delay formula (eq ): t p =0.69 [C 1 R 1 + C 2 (R 1 + R 2 )+C 3 (R 1 + R 2 + R 3 )] Figure A three-section RC ladder network.
14 For the circuit if fig , fabricated using 0.13µm technology, Q p of the first inverter has W/L =2,andbothtransistors in the t.g. have W/L =1. Thecapsare C out1 =10fF, C TG1 = C TG2 =5fF,and C in2 =10fF. Use empirical formulas to obtain R P 1 and R TG ;thefindt p.
15 2. The following diagram shows an NMOS transistor operating as a switch. v C v A v Y Assuming that µ n C ox =300µA/V 2, W/L =1.5, V t0 =1V, γ =0.5V 1/3,and2φ F =0.6V, find (a) the maximum voltage across the capacitor, v Y,ifv A = v C =5V.(15pts) (b) the voltage that must be applied to v C so that the voltage across the capacitor, v Y, reaches 5V if v A =5V.(10pts) (c) an estimate of the fall time t f that it takes for v Y to drop from 90% to 10% of its initial value of 5V,usingtheaveragecurrentmethod. AssumeC =1pF, v A =0V and v C =5V.(10pts)
16 2. The following diagram shows an NMOS transistor operating as a switch. v C v A v Y Assuming that µ n C ox =300µA/V 2, W/L =1.5, V t0 =1V, γ =0.5V 1/3,and2φ F =0.6V, find (a) the maximum voltage across the capacitor, v Y,ifv A = v C =5V.(15pts) (b) the voltage that must be applied to v C so that the voltage across the capacitor, v Y, reaches 5V if v A =5V.(10pts) (c) an estimate of the fall time t f that it takes for v Y to drop from 90% to 10% of its initial value of 5V,usingtheaveragecurrentmethod. AssumeC =1pF, v A =0V and v C =5V.(10pts) Ans.: (a) vy=3.4v; (b) vc=6.8v; (c) id1=3.6ma; id2=0.84ma; tf=1.8ns
17 Figure Realization of a two-to-one multiplexer using pass-transistor logic.
18 Figure Realization of the XOR function using pass-transistor logic.
19 Figure An example of a pass-transistor logic gate utilizing both the input variables and their complements. This type of circuit is therefore known as complementary pass-transistor logic, or CPL. Note that both the output function and its complement are generated.
20 Probs. 13, 16, 21
21 Dynamic Logic Figure (a) Basic structure of dynamic-mos logic circuits. (b) Waveform of the clock needed to operate the dynamic logic circuit. (c) An example circuit.
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