CUSTOM MODULES (Commercial / Moisture Resistant / Hermetic)

Size: px
Start display at page:

Download "CUSTOM MODULES (Commercial / Moisture Resistant / Hermetic)"

Transcription

1 TO O (ommercial / oisture esistant / ermetic) apabilities: ustomers looking for application specific custom power modules benefit from owerex s years of experience in chip manufacturing and design / engineering. owerex custom power modules employ performance proven features. oldered-down and wire bonding fabrication and compression bonded encapsulation () of / iode elements offer increased switching speeds, lower losses, more efficient cooling and higher power handling capabilities. eliability / ualification Testing: eliability and qualification testing can be performed in accordance to military specificatio, including roup, and and specific customer requirements. eatures: ifferent ircuit onfiguratio (i.e. ommon mitter, hopper) ifferent Termination tyles (i.e. Thicker us ars, -sub onnectors, ress On i, etc.) xtended Temperature ange, - to ermetic igh Voltage Isolation Integrated eatsinks oth ir and iquid ooled by liminating the aseplate arger ree-wheel iodes ow odule Weight oisture esistance Over-current hutdown ackage eight, Width and ength Temperature and urrent ee ubstrates: lumina luminum itride eo I ie Technology: iode OT iode TO i iode VIT i OT IT ackages: ustom evelopment for oth lastic and ermetic ackages icture rame tandard IT ases T O OTT umbering ystem...-2 roduct Overview...-2 ustom IT...-4 ustom OT...- ustom ast iode...- Outline rawings...- VOT: 3V TO,V T: TO ustom IT ast ecovery iode iode ectifiers i ITs ontact ohn eck td - jgpl.com

2 -2 roduct Overview umbering ystem 2 is a V, ustom ingle ast iode odule / T OITIO V V I2 I2 I23 () (2) (3) 4 (4) () () 2 (7) / OO ITT 2V I23 I2 is a V, ustom IT ual odule erial esignation (T) TO IT O OW I O V V I I2 I3 I3 I () I (2) (3) 2 3 (4) () (8) (9) () erial esignation (I) I - T- I 2V V 2V I2 I22 I4 () roduct ine: = ustom odule (2) evice: = TO I = IT = OT = Traistor = ectifier T = Thyristor = ate river (ontinued on page -3) ontact ohn eck td - jgpl.com

3 roduct Overview (ontinued from page -2) / 2 / 9 7 / 8 umbering ystem TO OT TO T IO O I O I T IO V V 7V V 2 / 2 / / 8 (3) onfiguration: = -ridge (ingle-phase ridge) = ommon mitter (athode) = ouble / ual = Three-phase ull Wave = ommon node = onverter Inverter = Three-hase alf-wave = symmetrical alf-bridge = ow ide hopper = igh ide hopper = ingle T = Two Individual (4) Voltage: = 2 = 2 3 = 3 4 = 4 = = 7 = 7 8 = 8 9 = 9 to 99 X () urrent: = = = = = 8 2 = 2 = 2 2 = 2 2 = 2 2 = 28 3 = 3 = 3 3 = 3 = 3 3 = 38 to 99 X erial esignation T: () T = Terminal eight (7) 99 Terminal eight (mm) I: (8) 9 (umbered from 999 for (9) 9 each individual combination of () 9 7 previous digits.) ustom IT ast ecovery iode iode ectifiers i ITs ontact ohn eck td - jgpl.com -3

4 -4 ustom IT, (efer to device datasheets at for test conditio.) XI TI TI TITI -W IO T TITI Type V I mperes I mperes T j(x) V Isolation tatic Test onditio I mperes Typ. V T j = 2 Typ. V (T) ax. V (T) ynamic V (T) Test ond. V = V, f = z ies n oes n res n esistive oad witching Times t d(on) t r t d(off) t r I mperes V t rr IT (ax.) th(j-c) /W iode (ax.) th(j-c) /W Weight rams Outline rawings umber age ingle ustom IT I4 I2 I I2 2 T T T T T T T T.79. Typ.. Typ.. Typ ual / tandard onfiguration ustom IT I2 8 2 I23 2 I ual / ommon mitter ustom IT I T T T T T T T T T T T.24 T 2 - ow ide hopper ustom IT I3 I 9 I ac Three-hase ridge I ingle ustom IT I2, I, I2 2 3 I4 (24) (23) (22) () () Th T (47) (48) T () T2 (2) ual / tandard onfiguration ustom IT I23 8V 2 8V I2, I2 2(24) 2(23) 2(38) 2(39) Tr2 2 (47) i2 i (48) Tr T () Th T (22) () () T2 (2) ual / ommon mitter ustom IT I ow ide hopper ustom IT I3, I, I ac Three-hase ridge I22-9 V- - V-2 V W-3 W-4 W - -2 ontact ohn eck td - jgpl.com

5 ustom OT odule, (efer to device datasheets at for test conditio.) XI TI Type V I mperes T j = 2 (Typ.) V T j(x) V Isolation TI TITI tatic (on) (mω) (Typ.) V (in.) I (µ) (ax.) V (ax.) g (n) (Typ.) T TITI OT (Typ.) th(j-c) /W odule (ax.) th(c-f) /W Weight rams Outline rawings umber age ingle ustom OT odule 3 ingle ustom OT odule ustom ast iode, (efer to device datasheets at for test conditio.) Type V (V = V + V) I (av) /T mperes/ (8 sin) I mperes (8.3ms, Tj(max), % V eapplied) OT I i 2 t 2 sec (8.3ms, Tj(max), % V eapplied) V /I /mperes (Tj = 2 ) t rr t rr at If mperes Outline di/dt th(j-c) th(c-s) T j(max) rawings mperes/µs /W /W Weight umber age ingle ast iode 2 / , 3.2 / / , 2. / / T / 9.2 / T ingle ast iode, 7,, 2 ustom IT ast ecovery iode iode ectifiers i ITs ontact ohn eck td - jgpl.com -

6 - I23 I (3 ) ( ) T V V - (4 ) (3 ) Z (2 ) V W X Y (2 ) (3 ) ±. 2.4± #-32 X.3 in ia.. ia in. 2.3 in #2- X.7 in etric T V W X.. Y.24.2 Z ia..3 ia etric ontact ohn eck td - jgpl.com

7 4 I3 I, I3 I2, I, T OIT T (4 TY.) 2 2 I2 I (3) (2) () () (3 TY.) (2 TY.) # T (3 TY.) 2 2 (3) (2) () () ±. 8.± ax. 3. ax ia.. ia..2. etric / /-. 3.±. 93.±.2.88±. 48.± etric T.2 ia.. ia ax..8 ax ia..3 ia. ustom IT ast ecovery iode iode ectifiers i ITs ontact ohn eck td - jgpl.com -7

8 , 7 I2, 2 I22 W (2 TY.) I2 (3) (2) () () 8 W V V (4 TY.) 2 (3) (2) () () T V W V Y X W ±. 93.± ±. 48.±.2.42 ax. 3 ax V.2 ia.. ia. W etric ±.2 ± ia.. ia. ousing Types (..T. fg. o. td.) 8-V-- 2-V T V.87+.4/ /-. W X.3 Y.2 3. ontact ohn eck td - jgpl.com

9 I2, I2, I4 Y (4 ) TI "" T Z W T V T 48 TI "" 23 X V W X TI "" (4 ) TI "" Tolerance Otherwise pecified (mm) ivision of imeion Tolerance. to 3 ±.2 over 3 to ±.3 over to 3 ±. over 3 to ±.8 over to ±.2 The tolerance of size between terminals is assumed to ± / / ±.2.± T V. 4.2 W.37. X Y Z ±.2.± ia.. ia..7+.4/ / T.7 ia. 4.3 ia..2 ia. 2. ia. V.88 ia. 2.2 ia. W.2 3. X ustom IT ast ecovery iode iode ectifiers i ITs ontact ohn eck td - jgpl.com -9

W - DIA. (4 TYP.) AE AG AH AJ R

W - DIA. (4 TYP.) AE AG AH AJ R M6HA-2A Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (72) 925-7272 www.pwrx.com Single IGBT A-Series Module 6 Amperes/12 Volts H G F D K J W - DIA. ( TYP.) AF A AG Y X Y Z G AA K B A

More information

V (4TYP) U (5TYP) L 0.69± ±0.25 M N P Q R S M6 Metric M6 T 0.63 Min Min.

V (4TYP) U (5TYP) L 0.69± ±0.25 M N P Q R S M6 Metric M6 T 0.63 Min Min. QID42 Powerex, Inc., 7 Pavilion Lane, Youngwood, Pennsylvania 697 (724) 92-7272 www.pwrx.com Dual IGBTMOD HVIGBT Module Amperes/4 Volts S NUTS (TYP) F A D F J (2TYP) N 7 8 H B E 2 6 M H 4 V (4TYP) G (TYP)

More information

IRGPC40UD2 UltraFast CoPack IGBT

IRGPC40UD2 UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT REOVERY DIODE PD - 9.88A UltraFast opack IGBT Features Switching-loss rating includes all "tail" losses HEXFRED TM soft ultrafast diodes Optimized

More information

CM200EXS-24S. Chopper IGBT NX-Series Module 200 Amperes/1200 Volts

CM200EXS-24S. Chopper IGBT NX-Series Module 200 Amperes/1200 Volts CM2EXS-24S Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com Chopper IGBT NX-Series Module 2 Amperes/12 Volts A D K F G J E H J S T U 6 5 4 3 M 7 2 L N AL (4 PLACES)

More information

LOW NOISE, JFET INPUT OPERATIONAL AMPLIFIERS

LOW NOISE, JFET INPUT OPERATIONAL AMPLIFIERS These low noise T input operational amplifiers combine two state of the art analog technologies on a single monolithic integrated circuit. ach internally compensated operational amplifier has well matched

More information

KF80N08P/F N CHANNEL MOS FIELD EFFECT TRANSISTOR SEMICONDUCTOR TECHNICAL DATA. General Description TO-220IS (1)

KF80N08P/F N CHANNEL MOS FIELD EFFECT TRANSISTOR SEMICONDUCTOR TECHNICAL DATA. General Description TO-220IS (1) SINUTR TNI T N NN S I T TRNSISTR eneral escription 80N08P It s mainly suitable for low voltage applications such as automotive, / converters and a load switch in battery powered applications TURS V SS

More information

KHB9D5N20P1/F1/F2 N CHANNEL MOS FIELD EFFECT TRANSISTOR SEMICONDUCTOR TECHNICAL DATA. General Description

KHB9D5N20P1/F1/F2 N CHANNEL MOS FIELD EFFECT TRANSISTOR SEMICONDUCTOR TECHNICAL DATA. General Description SIUTR TI T 952P1/1/2 S I T TRSISTR eneral escription 952P1 This planar stripe ST has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics.

More information

Technical. Application. Assembly. Availability. Pricing. Phone

Technical. Application. Assembly. Availability. Pricing. Phone 6 Baker Road, Suite Minnetonka, MN 5535 www.chtechnology.com Phone (95) 933-69 Fax (95) 933-63 --7- Thank you for downloading this document from C&H Technology, Inc. Please contact the C&H Technology team

More information

KHB2D0N60P/F/F2 N CHANNEL MOS FIELD EFFECT TRANSISTOR SEMICONDUCTOR TECHNICAL DATA. General Description

KHB2D0N60P/F/F2 N CHANNEL MOS FIELD EFFECT TRANSISTOR SEMICONDUCTOR TECHNICAL DATA. General Description SIUTR TI T 26P//2 S I T TRSISTR eneral escription 26P This planar stripe ST has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics.

More information

Green. Features. I D T C = +25 C (Note 10) 100A 95A. Pin1. Top View Pin Configuration

Green. Features. I D T C = +25 C (Note 10) 100A 95A. Pin1. Top View Pin Configuration Product ummary BV V () Max.mΩ @ V G = V.mΩ @ V G = V escription and pplications I T = + (ote ) 9 This MFT is designed to meet the stringent requirements of automotive applications. It is qualified to -Q,

More information

Features / Advantages: Applications: Package: TO-247

Features / Advantages: Applications: Package: TO-247 DPG0HB HiPerFED² M I F x 30 t 35ns rr High Performance Fast ecovery Diode Low Loss and Soft ecovery ommon athode Part number DPG0HB Backside: cathode 1 3 Features / dvantages: pplications: Package: TO-7

More information

AK AJ AT AR DETAIL "A" N M L K B AB (6 PLACES) DETAIL "B" TH1 (11) TH2 (10) NTC *ALL PIN DIMENSIONS WITHIN A TOLERANCE OF ±0.5

AK AJ AT AR DETAIL A N M L K B AB (6 PLACES) DETAIL B TH1 (11) TH2 (10) NTC *ALL PIN DIMENSIONS WITHIN A TOLERANCE OF ±0.5 Powerex, Inc., 73 Pavilion Lane, Youngwood, Pennsylvania 5697 (724) 925-7272 www.pwrx.com Six IGBTMOD + Brake NX-S Series Module AH AN AC AD AE H AK AJ A D E F G AK AJ AP AT AR AQ AS C AX BB BC BD DETAIL

More information

Technical. Application. Assembly. Availability. Pricing. Phone

Technical. Application. Assembly. Availability. Pricing. Phone 62 Baker Road, Suite 8 Minnetonka, MN 55345 www.chtechnology.com Phone (952) 933-69 Fax (952) 933-6223 -8-274-4284 ank you for downloading this document from C&H Technology, Inc. Please contact the C&H

More information

C N V (4TYP) U (5TYP) Dimensions Inches Millimeters L 0.69± ±0.25 M N P Q

C N V (4TYP) U (5TYP) Dimensions Inches Millimeters L 0.69± ±0.25 M N P Q QID3322 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 1697 (724) 92-7272 www.pwrx.com Dual IGBT HVIGBT Module 2 Amperes/33 Volts S NUTS (3TYP) F A D F J (2TYP) C N 7 8 H B E 1 2 3 6 M H 4 V

More information

I C T s =25 C 389 A V CC = 800 V. T s =70 C 285 A I C T s =25 C 440 A T s =70 C 345 A V CC = 360 V. V GE 15 V T j =150 C 10 µs

I C T s =25 C 389 A V CC = 800 V. T s =70 C 285 A I C T s =25 C 440 A T s =70 C 345 A V CC = 360 V. V GE 15 V T j =150 C 10 µs IGBT 1 V CES T j =25 C 1200 V I C T s =25 C 473 A T j = 150 C T s =70 C 358 A I C T s =25 C 529 A T j = 175 C T s =70 C 425 A I Cnom 600 A I CRM I CRM = 3 x I Cnom 1800 A V GES -20... 20 V t psc V CC =

More information

STS3401. P -C hannel E nhancement Mode MOS FE T. ABS OLUTE MAXIMUM R ATINGS (T A=25 C unless otherwise noted) THE R MAL C HAR AC TE R IS TIC S

STS3401. P -C hannel E nhancement Mode MOS FE T. ABS OLUTE MAXIMUM R ATINGS (T A=25 C unless otherwise noted) THE R MAL C HAR AC TE R IS TIC S T341 P - hannel E nhancement Mode MO FE T P R ODU T UMMR Y V D ID -3V -3 F E T UR E ( m W ) Max R D (ON) 7 @ V = -1V 1 @ V = -4.V uper high dee cell design for low R D (ON ). R ugged and reliable. OT-23

More information

I C T s =25 C 312 A T s =70 C 252 A I Cnom 300 A I CRM I CRM = 3xI Cnom 900 A V GES V V CC = 800 V. I F T s =25 C 253 A

I C T s =25 C 312 A T s =70 C 252 A I Cnom 300 A I CRM I CRM = 3xI Cnom 900 A V GES V V CC = 800 V. I F T s =25 C 253 A SKiM 4 Trench IGBT Modules Features IGBT 4 Trench Gate Technology Solder technology V CE(sat) with positive temperature coefficient Low inductance case Isolated by Al 2 O 3 DCB (Direct Copper Bonded) ceramic

More information

CM1000DUC-34SA. Mega Power Dual IGBT 1000 Amperes/1700 Volts

CM1000DUC-34SA. Mega Power Dual IGBT 1000 Amperes/1700 Volts CM1DUC-34SA Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com 1 Amperes/17 Volts A P D (8 PLACES) G U H H N S L K C2 C2E1 C1 W X J F BB G2 E2 E1 G1 Y C B Z E CC

More information

IGBT V CES T j =25 C 1200 V I C T c =25 C 114 A T j = 175 C T c =80 C 87 A I Cnom 75 A I CRM I CRM = 3xI Cnom 225 A V GES

IGBT V CES T j =25 C 1200 V I C T c =25 C 114 A T j = 175 C T c =80 C 87 A I Cnom 75 A I CRM I CRM = 3xI Cnom 225 A V GES SEMITRANS 2 Features V-IT = 6. Generation Trench V-IT (Fuji) CAL4 = Soft switching 4. Generation CAL-diode Isolated copper baseplate using DBC technology (Direct Copper Bonding) UL recognized, file no.

More information

IGBT V CES T j =25 C 1200 V I C T c =25 C 311 A T j = 175 C T c =80 C 237 A I Cnom 200 A I CRM I CRM = 3xI Cnom 600 A V GES

IGBT V CES T j =25 C 1200 V I C T c =25 C 311 A T j = 175 C T c =80 C 237 A I Cnom 200 A I CRM I CRM = 3xI Cnom 600 A V GES SEMITRANS 3 Features V-IT = 6. Generation Trench V-IT (Fuji) CAL4 = Soft switching 4. Generation CAL-diode Isolated copper baseplate using DBC technology (Direct Copper Bonding) UL recognized, file no.

More information

Features. Symbol Parameter Rating Units V DS Drain-Source Voltage 40 V V GS Gate-Source Voltage ±20 V

Features. Symbol Parameter Rating Units V DS Drain-Source Voltage 40 V V GS Gate-Source Voltage ±20 V General escription These N-Channel enhancement mode power field effect transistors are using trench MO technology. This advanced technology has been especially tailored to minimize on-state resistance,

More information

C N V (4TYP) U (5TYP)

C N V (4TYP) U (5TYP) QID3316 Preliminary Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 1697 (724) 92-7272 www.pwrx.com Dual IGBT HVIGBT Module 1 Amperes/33 Volts S NUTS (3TYP) F A D F J (2TYP) C N 7 8 H B E M 1

More information

Improved, Dual, High-Speed Analog Switches

Improved, Dual, High-Speed Analog Switches -477; Rev ; 6/ Improved, ual, High-peed Analog witches General escription Maxim's redesigned G4// analog switches now feature guaranteed low on-resistance matching between switches (Ω max) and guaranteed

More information

IGBT Designer s Manual

IGBT Designer s Manual IGBT Designer s Manual Data Sheets The IGBT devices listed in this Designer s Manual represent International Rectifier s IGBT line as of August, 994. The data presented in this manual supersedes all previous

More information

T s =25 C 43 A T s =70 C 33 A T s =25 C 48 A T s =70 C 39 A I Cnom 35 A I CRM I CRM = 3 x I Cnom 105 A V GES V. T j = 175 C V CC = 800 V

T s =25 C 43 A T s =70 C 33 A T s =25 C 48 A T s =70 C 39 A I Cnom 35 A I CRM I CRM = 3 x I Cnom 105 A V GES V. T j = 175 C V CC = 800 V MiniSKiiP 2 Features Trench 4 IGBT s Robust and soft freewheeling diodes in CAL technology Highly reliable spring contacts for electrical connectio UL recognised file no. E63532 Typical Applicatio* Inverter

More information

KF5N50PR/FR/PS/FS N CHANNEL MOS FIELD EFFECT TRANSISTOR SEMICONDUCTOR TECHNICAL DATA. General Description

KF5N50PR/FR/PS/FS N CHANNEL MOS FIELD EFFECT TRANSISTOR SEMICONDUCTOR TECHNICAL DATA. General Description EMICOUCTOR TECHIC T KF55PR/FR/P/F CHE MO FIE EFFECT TRITOR eneral escription KF55PR, KF55P This planar stripe MOFET has better characteristics, such as fast switching time, fast reverse recovery time,

More information

T C MEASURED POINT G1 E1 E2 G2 W - (4 PLACES) G2 E2 E1 G1

T C MEASURED POINT G1 E1 E2 G2 W - (4 PLACES) G2 E2 E1 G1 CMDU-3KA Powerex, Inc., Hillis Street, Youngwood, Pennsylvania 15697-1 (7) 95-77 Dual IGBTMOD KA-Series Module Amperes/17 Volts B F A G T C MEASURED POINT M C L T - ( TYP.) N R Z CE1 E C1 C E AA S - (3

More information

Top View Bottom View Internal Schematic (Top View)

Top View Bottom View Internal Schematic (Top View) W P M3415FY4Q P-H HM M MF Product ummary B) -16 ) max 39mΩ @ = -4.5 52mΩ @ = -2.5 65mΩ @ = -1.8 escription and pplications max = +25-2.5-2.1-1.8 his MF is designed to minimize the on-state resistance ))

More information

KF12N60P/F N CHANNEL MOS FIELD EFFECT TRANSISTOR SEMICONDUCTOR TECHNICAL DATA. General Description

KF12N60P/F N CHANNEL MOS FIELD EFFECT TRANSISTOR SEMICONDUCTOR TECHNICAL DATA. General Description SINUTR TNI T N60P/ N NN S I T TRNSISTR eneral escription N60P This planar stripe ST has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics.

More information

SMPS MOSFET. V DSS R DS(on) max (mω)

SMPS MOSFET. V DSS R DS(on) max (mω) P- 94094A SMPS MOSFET IRF7477 Applications l High Frequency Synchronous Buck Converters for Computers and Communications Benefits l Ultra-Low Gate Impedance l Very Low R S(on) l Fully Characterized Avalanche

More information

DG411CY. Pin Configurations/Functional Diagrams/Truth Tables IN2 DG412 IN3 DIP/SO/TSSOP DG412 LOGIC SWITCH OFF SWITCHES SHOWN FOR LOGIC 0 INPUT

DG411CY. Pin Configurations/Functional Diagrams/Truth Tables IN2 DG412 IN3 DIP/SO/TSSOP DG412 LOGIC SWITCH OFF SWITCHES SHOWN FOR LOGIC 0 INPUT 9-728; Rev ; 9/0 Improved, Quad, General escription Maxim s redesigned analog switches now feature low on-resistance matching between switches (Ω max) and guaranteed on-resistance flatness over the signal

More information

A B C D E F G H J K L M N P Q

A B C D E F G H J K L M N P Q onnectors Vertical ount Vertical ount rinted ircuit oard icro - ilter onnectors. These vertical mount connectors are ideal for flexible circuit or motherboard applications. ey eatures include gold plated

More information

FDS4435BZ P-Channel PowerTrench MOSFET -30V, -8.8A, 20m

FDS4435BZ P-Channel PowerTrench MOSFET -30V, -8.8A, 20m F35BZ P-Channel PowerTrench MOFET -V, -8.8A, m Features Max r (on) = m at V G = -V, I = -8.8A Max r (on) = 35m at V G = -.5V, I = -.7A Extended V G range (-5V) for battery applications HBM E protection

More information

L K K K K P P1 N GU EU GV EV GW EW GU GVGW GB E LABEL H H

L K K K K P P1 N GU EU GV EV GW EW GU GVGW GB E LABEL H H Three Phase Converter + Three Phase Inverter + Brake A ( PLACES) G J L L L P P1 N GU EU GV EV GW EW GU GVGW GB E Q C R D LABEL D U B R S T S V 3 MAIN TERMINAL X P P1 Outline Drawing and Circuit Diagram

More information

CM600HX-12A. APPLICATION General purpose Inverters, Servo Amplifiers, Power supply, etc. CM600HX-12A. IC...600A VCES...600V Single

CM600HX-12A. APPLICATION General purpose Inverters, Servo Amplifiers, Power supply, etc. CM600HX-12A. IC...600A VCES...600V Single MHX-1A MHX-1A I...A S... Single Flatbase Type / Insulated Package / opper (non-plating) base plate RoHS Directive compliant APPLIATION General purpose Inverters, Servo Amplifiers, Power supply, etc. OUTLIN

More information

IXTN660N04T4. TrenchT4 TM Power MOSFET = 40V = 660A. 0.85m. Advance Technical Information

IXTN660N04T4. TrenchT4 TM Power MOSFET = 40V = 660A. 0.85m. Advance Technical Information TrenchT4 TM Power MOFET Advance Technical Information IXTN66N4T4 D V D = 4V I D25 = 66A R D(on).85m N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode G minibloc, OT-227 E53432 ymbol Test

More information

IRF7805QPbF. Absolute Maximum Ratings Max. V DS Drain-to-Source Voltage 30 V GS

IRF7805QPbF. Absolute Maximum Ratings Max. V DS Drain-to-Source Voltage 30 V GS P 964 dvanced Process Technoogy Utra Low On-Resistance N Channe MOFET urface Mount vaiabe in Tape & Ree 50 C Operating Temperature utomotive [Q0] Quaified Lead-Free escription pecificay designed for utomotive

More information

IXTT76P10THV IXTA76P10T IXTP76P10T IXTH76P10T

IXTT76P10THV IXTA76P10T IXTP76P10T IXTH76P10T TrenchP TM Power MOFET P-Channel Enhancement Mode Avalanche Rated IXTT76P1THV IXTA76P1T IXTP76P1T IXTH76P1T ymbol Test Conditions Maximum Ratings V = 25 C to 15 C - 1 V V R = 25 C to 15 C, R = 1M - 1 V

More information

X (11 PLACES) TERMINAL CODE 1 SUP 2 SVP 3 SWP 4 SUN 5 SVN 6 SWN 7 GUP 8 GVP 9 GWP 10 GUN (13) 11 GVN 12 GWN 13 TH1 14 TH2 (14)

X (11 PLACES) TERMINAL CODE 1 SUP 2 SVP 3 SWP 4 SUN 5 SVN 6 SWN 7 GUP 8 GVP 9 GWP 10 GUN (13) 11 GVN 12 GWN 13 TH1 14 TH2 (14) Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com 6-PACK High Power MOSFET Module G Q G H K L A D F M L N X (11 PLACES) P R AD AB AC J P N Z AB AE Outline Drawing

More information

SMPS MOSFET. V DSS R DS(on) typ. I D A I DM. 27 P C = 25 C Power Dissipation 45 Linear Derating Factor. V/ns T J

SMPS MOSFET. V DSS R DS(on) typ. I D A I DM. 27 P C = 25 C Power Dissipation 45 Linear Derating Factor. V/ns T J M MOFE D - 4444 Applications l witch Mode ower upply M) l ninterruptible ower upply l igh peed ower witching EXFE ower MOFE V D R Don) typ. I D 500V 20mΩ.A Benefits l Low ate Charge Qg results in imple

More information

AOD452 N-Channel Enhancement Mode Field Effect Transistor

AOD452 N-Channel Enhancement Mode Field Effect Transistor AO4 N-Channel Enhancement Mode Field Effect Transistor eneral escription The AO4 uses advanced trench technology and design to provide excellent R (ON) with low gate charge. This device is suitable for

More information

IXTN660N04T4. TrenchT4 TM Power MOSFET = 40V = 660A. 0.85m. Advance Technical Information

IXTN660N04T4. TrenchT4 TM Power MOSFET = 40V = 660A. 0.85m. Advance Technical Information TrenchT4 TM Power MOFET Advance Technical Information D V D = 4V I D25 = 66A R D(on).85m N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode G minibloc, OT-227 E53432 ymbol Test Conditions

More information

Representative Schematic Diagram. Standard Application ORDERING INFORMATION DEVICE TYPE/NOMINAL VOLTAGE MOTOROLA ANALOG IC DEVICE DATA

Representative Schematic Diagram. Standard Application ORDERING INFORMATION DEVICE TYPE/NOMINAL VOLTAGE MOTOROLA ANALOG IC DEVICE DATA The 7800, eries of positive voltage regulators are inexpensive, easytouse devices suitable for a multitude of applications that require a regulated supply of up to 00 m. ike their higher powered 7800 and

More information

Technical. Application. Assembly. Availability. Pricing. Phone

Technical. Application. Assembly. Availability. Pricing. Phone 611 Baker Road, Suite 1 Minnetonka, MN 5535 www.chtechnology.com Phone (95) 933-619 Fax (95) 933-63 1--7- Thank you for downloading this document from C&H Technology, Inc. Please contact the C&H Technology

More information

IRGPC50F Fast Speed IGBT

IRGPC50F Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR PD - 9.695A Fast Speed IGBT Features Switching-loss rating includes all "tail" losses Optimized for medium operating frequency ( to khz) See Fig. for urrent vs. Frequency

More information

V T j,max I DM. 100% UIS Tested 100% R g Tested TO251A IPAK AOI11S60

V T j,max I DM. 100% UIS Tested 100% R g Tested TO251A IPAK AOI11S60 AO6/AOI6 6V A α MO TM Power Transistor eneral escription The AO6 & AOI6 have been fabricated using the advanced αmo TM high voltage process that is designed to deliver high levels of performance and robustness

More information

V DSS R DS(on) max I D. 100V GS = 10V 7.3A. 58 P A = 25 C Maximum Power Dissipation 2.5 Linear Derating Factor

V DSS R DS(on) max I D. 100V GS = 10V 7.3A. 58 P A = 25 C Maximum Power Dissipation 2.5 Linear Derating Factor P - 94683C HEXFET Power MOSFET Applications l High frequency C-C converters V SS R S(on) max I 0V 22m:@V GS = V 7.3A Benefits l Low Gate to rain Charge to Reduce Switching Losses l Fully Characterized

More information

CM600HG-130H HIGH POWER SWITCHING USE 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules

CM600HG-130H HIGH POWER SWITCHING USE 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules M6HG-1H rd-ersion M6HG-1H I...6 A S... 6 High Insulated Type 1-element in a Pack AISi Baseplate APPLIATION Traction drives, High Reliability onverters / Inverters, D choppers OUTLIN DRAWING & IRUIT DIAGRAM

More information

IRF7805. HEXFET Chip-Set for DC-DC Converters. Absolute Maximum Ratings. Thermal Resistance. 1 PD 91746E SO-8.

IRF7805. HEXFET Chip-Set for DC-DC Converters. Absolute Maximum Ratings. Thermal Resistance.  1 PD 91746E SO-8. P 9746E HEXFET Chip-et for C-C Converters N Channel pplication pecific MOFETs Ideal for Mobile C-C Converters Low Conduction Losses Low witching Losses 2 8 7 escription This new device employs advanced

More information

we are reliable Our capacitors transport you to work on time

we are reliable Our capacitors transport you to work on time we are reliable Our capacitors transport you to work on time SNUBBER APAITORS www.api-capacitors.com SNUBBER APAITORS API apacitors offer a wide range of snubber capacitors for GTO, IGT and other thyristor

More information

Advance Technical Information IXFN110N85X V DSS. High Power Density Easy to Mount Space Savings BV DSS. = 3mA 850 V. = 8mA

Advance Technical Information IXFN110N85X V DSS. High Power Density Easy to Mount Space Savings BV DSS. = 3mA 850 V. = 8mA Advance Technical Information X-Class HiPerFET TM Power MOFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFN11N85X V D = 85V I D25 = 11A R D(on) 33m D minibloc, OT-227 E153432 ymbol

More information

N-C hannel E nhancement Mode Field E ffect Transistor. T O-251(l-P AK ) (T A=25 C unles s otherwis e noted) 25 C 70 C IDM P D.

N-C hannel E nhancement Mode Field E ffect Transistor. T O-251(l-P AK ) (T A=25 C unles s otherwis e noted) 25 C 70 C IDM P D. amhop Microelectronics C orp. T U/1955NL N-C hannel E nhancement Mode Field E ffect Transistor rp,12 25 ver1.2 P R OUC T UMMR Y V I R (ON) ( m Ω ) Max 55V 55 @ V G = V 8 @ VG = 4.5V F E T UR E uper high

More information

STM8309. Dual Enhancement Mode Field Effect Transistor ( N and P Channel) ABSOLUTE MAXIMUM RATINGS (TA=25 C unless otherwise noted)

STM8309. Dual Enhancement Mode Field Effect Transistor ( N and P Channel) ABSOLUTE MAXIMUM RATINGS (TA=25 C unless otherwise noted) SamHop Microelectronics Corp. STM39 Green Product Oct.3, 26 Dual Enhancement Mode Field Effect Traistor ( N and P Channel) PRODUCT SUMMRY (N-Channel) PRODUCT SUMMRY (P-Channel) VDSS ID RDS(ON) ( mω ) Max

More information

AOD444/AOI444 60V N-Channel MOSFET

AOD444/AOI444 60V N-Channel MOSFET AO/AOI 6V NChannel MOFET eneral escription The AO/AOI combine advanced trench MOFET technology with a low resistance package to provide extremely low R (ON). Those devices are suitable for use in PWM,

More information

T s =25 C 116 A T s =70 C 87 A I Cnom 105 A I CRM I CRM = 2 x I Cnom 210 A V GES V V CC = 900 V V GE 20.

T s =25 C 116 A T s =70 C 87 A I Cnom 105 A I CRM I CRM = 2 x I Cnom 210 A V GES V V CC = 900 V V GE 20. MiniSKiiP 2 SKiiP 28AHB16V4 Target Data Features Fast Trench IGBTs Robust and soft freewheeling diodes in CAL technology Highly reliable spring contacts for electrical connections UL recognised file no.

More information

< HVIGBT MODULE > CMH1200DC-34S HIGH POWER SWITCHING USE SiC Hybrid HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Module

< HVIGBT MODULE > CMH1200DC-34S HIGH POWER SWITCHING USE SiC Hybrid HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Module < HVIGBT MODULE > I C 2A V CES 7V 2-element in a Pack Insulated Type CSTBT SiC Schottky-Barrier Diode AlSiC Baseplate APPLICATION Traction drives, High Reliability Converters / Inverters, DC choppers OUTLINE

More information

Integrated Silicon Pressure Sensor Altimeter/Barometer Pressure Sensor On-Chip Signal Conditioned, Temperature Compensated and Calibrated

Integrated Silicon Pressure Sensor Altimeter/Barometer Pressure Sensor On-Chip Signal Conditioned, Temperature Compensated and Calibrated reescale emiconductor Technical Data Integrated ilicon Pressure ensor ltimeter/arometer Pressure ensor On-hip ignal onditioned, Temperature ompensated and alibrated The PX4115 series is designed to sense

More information

-3.4A -3.0A. Part Number Case Packaging DMP4065SQ-7 SOT23 3,000/Tape & Reel DMP4065SQ-13 SOT23 10,000/Tape & Reel

-3.4A -3.0A. Part Number Case Packaging DMP4065SQ-7 SOT23 3,000/Tape & Reel DMP4065SQ-13 SOT23 10,000/Tape & Reel Product ummary BV -4V (O) max 8mΩ @ V G = -V mω @ V G = -4.5V I max T = +25-3.4-3. MP45Q 4V P-HL HMT MO MOFT Features and Benefits Low On-esistance Low Input apacitance Fast witching peed Low Input/Output

More information

IR MOSFET StrongIRFET IRF40DM229

IR MOSFET StrongIRFET IRF40DM229 I, rain Current (A) IR MOFET trongirfet IRF40M229 Application Brushed Motor drive applications BLC Motor drive applications Battery powered circuits Half-bridge and full-bridge topologies ynchronous rectifier

More information

STARPOWER IGBT GD40PIK120C5S. General Description. Features. Typical Applications. Equivalent Circuit Schematic SEMICONDUCTOR

STARPOWER IGBT GD40PIK120C5S. General Description. Features. Typical Applications. Equivalent Circuit Schematic SEMICONDUCTOR STARPOWER SEMIONDUTOR IGBT GD4PIK125S 12V/4A PIM in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed

More information

ST700C..L SERIES 910A. Features. Typical Applications. Major Ratings and Characteristics. Bulletin I25190 rev. D 04/00. case style TO-200AC (B-PUK)

ST700C..L SERIES 910A. Features. Typical Applications. Major Ratings and Characteristics. Bulletin I25190 rev. D 04/00. case style TO-200AC (B-PUK) ST0C..L SERIES PHASE CONTROL THYRISTORS Hockey Puk Version Features Center amplifying gate Metal case with ceramic insulator International standard case TO-0AC (B-PUK) 910A Typical Applications DC motor

More information

IN1 IN2 DG412 GND IN3 IN4 DIP/SO/TSSOP DG412 LOGIC SWITCH OFF SWITCHES SHOWN FOR LOGIC 0 INPUT

IN1 IN2 DG412 GND IN3 IN4 DIP/SO/TSSOP DG412 LOGIC SWITCH OFF SWITCHES SHOWN FOR LOGIC 0 INPUT 9-4728; Rev 7; 9/08 Improved, Quad, General escription Maxim s redesigned analog switches now feature low on-resistance matching between switches (3Ω max) and guaranteed on-resistance flatness over the

More information

SMPS MOSFET. V DSS R DS(on) max I D

SMPS MOSFET. V DSS R DS(on) max I D SMPS MOSFET P-944B IF8PbF EXFET Power MOSFET Appications igh frequency C-C converters SS Son max I W 6A Benefits Low Gate to rain Charge to educe Switching Losses Fuy Characterized Capacitance Incuding

More information

Valve Products ADEX Series Valves

Valve Products ADEX Series Valves atalog 000-2US X alves X is a miniature low power consumption solenoid valves, ideal for powering small to mid-sized pneumatic actuators used in automation and process applications. X's versatility is

More information

ABB HiPak TM. IGBT Module 5SNA 1200E V CE = 2500 V I C = 1200 A

ABB HiPak TM. IGBT Module 5SNA 1200E V CE = 2500 V I C = 1200 A V CE = 25 V I C = 2 A ABB HiPak TM IGBT Module 5SNA 2E25 Doc. No. 5SYA 557-2 July 4 Low-loss, rugged SPT chip-set Smooth switching SPT chip-set for good EMC Industry standard package High power deity AlSiC

More information

Amplifiers JFET INPUT OPERATIONAL AMPLIFIERS

Amplifiers JFET INPUT OPERATIONAL AMPLIFIERS These low cost T input operational amplifiers combine two state of the art linear technologies on a single monolithic integrated circuit. ach internally compensated operational amplifier has well matched

More information

ESE 570: Digital Integrated Circuits and VLSI Fundamentals

ESE 570: Digital Integrated Circuits and VLSI Fundamentals EE 570: igital Integrated Circuits and VLI Fundamentals Lec 2: January 22, 2019 MO Fabrication pt. 1: Physics and Methodology Lecture Outline! igital CMO Basics! VLI Fundamentals! Fabrication Process 2

More information

N-Channel 30-V (D-S) MOSFET with Schottky Diode

N-Channel 30-V (D-S) MOSFET with Schottky Diode New Product i48by N-Channel -V (-) MOFET with chottky iode MOFET PROUCT UMMARY V (V) r (on) ( ) I (A).35 @ V G = V. @ V G = 4.5 V 8 CHOTTKY PROUCT UMMARY V (V) iode Forward Voltage V (V) I F (A).53 V @

More information

Low-Power, High-Speed CMOS Analog Switches

Low-Power, High-Speed CMOS Analog Switches New Product G1B/3B/5B Low-Power, High-peed MO Analog witches FEATURE BENEFIT APPLIATION 44-V upply Max Rating 15-V Analog ignal Range On-Resistance r (on) : 23 Low Leakage I (on) : pa Fast witching t ON

More information

IXFT50N60X IXFQ50N60X IXFH50N60X

IXFT50N60X IXFQ50N60X IXFH50N60X Preliminary Technical Information X-Class HiPerFET TM Power MOFET IXFT5N6X IXFQ5N6X IXFH5N6X V I 25 R (on) = 6V = 5A 73m N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic iode TO-268 (IXFT) G (Tab)

More information

AON7404G 20V N-Channel MOSFET

AON7404G 20V N-Channel MOSFET AON744G V NChannel MOFET General escription Trench Power MOFET technology Low R (ON) RoH and HalogenFree Compliant Product ummary V I (at V G =4.V) R (ON) (at V G =4.V) R (ON) (at V G =2.V) V A

More information

< HVIGBT MODULES > CM750HG-130R. APPLICATION Traction drives, High Reliability Converters / Inverters, DC choppers CM750HG-130R

< HVIGBT MODULES > CM750HG-130R. APPLICATION Traction drives, High Reliability Converters / Inverters, DC choppers CM750HG-130R I C 75A V CES V -element in a pack High Insulated type LPT-IGBT / Soft Recovery Diode AlSiC baseplate APPLICATION Traction drives, High Reliability Converters / Inverters, DC choppers OUTLINE DRAWING &

More information

IGBT Module H Bridge MIXA81H1200EH. = 1200 V = 120 A V CE(sat) = 1.8 V V CES I C25. Part name (Marking on product) MIXA81H1200EH.

IGBT Module H Bridge MIXA81H1200EH. = 1200 V = 120 A V CE(sat) = 1.8 V V CES I C25. Part name (Marking on product) MIXA81H1200EH. MIX1H1EH IGBT Module H Bridge CES 5 = 1 = 1 CE(sat) = 1. Part name (Marking on product) MIX1H1EH 13, 1 1 9 1 19 15 E773 3 11 1 1, Features: pplication: Package: Easy paralleling due to the positive temperature

More information

MS/Standard how to order

MS/Standard how to order /tandard how to order I--5015 and I-5015 ype (older ontacts) 102 18 W () 1 2 5 7 8 1. onnector ype designates ilitary tandard * designates service class and with proprietary special * designates service

More information

MODEL BCN SERIES. Thick Film Chip Resistor Arrays. 4-5 Model BCN Series

MODEL BCN SERIES. Thick Film Chip Resistor Arrays. 4-5 Model BCN Series MODE N SERIES Thick Film hip Resistor rrays MODE STES Edge Finish / Termination Scalloped Square Square Model (idth) # of Resistors ircuit Industry Size onvex onvex oncave Model N 102 (1.0mm) 2 Isolated

More information

AO V P-Channel MOSFET

AO V P-Channel MOSFET AO343 2V PChannel MOFET eneral escription Product ummary The AO343 uses advanced trench technology to provide excellent R (ON), low gate charge and operation with gate voltages as low as.v. This device

More information

ABB HiPak TM. IGBT Module 5SNA 0800N V CE = 3300 V I C = 800 A

ABB HiPak TM. IGBT Module 5SNA 0800N V CE = 3300 V I C = 800 A V CE = 33 V I C = 8 A ABB HiPak TM IGBT Module 5SNA 8N33 Doc. No. 5SYA 59- Jan 7 Low-loss, rugged SPT chip-set Smooth switching SPT chip-set for good EMC Industry standard package High power deity AlSiC

More information

APPLICATION Traction drives, High Reliability Converters / Inverters, DC choppers CM1000HG-130XA

APPLICATION Traction drives, High Reliability Converters / Inverters, DC choppers CM1000HG-130XA CMHG-3XA CMHG-3XA I C A V CES 65 V -element in pack High Insulated type CSTBT TM (III) / RFC Diode AlSiC baseplate APPLICATION Traction drives,

More information

Applications. Bottom S S S. Pin 1 G D D D

Applications. Bottom S S S. Pin 1 G D D D FM8635 N-Channel PowerTrench MOFET 8 V, 3 A,. mω Features Max r (on) =. mω at V = V, I = 5 A Max r (on) = 3. mω at V = 8 V, I = A Advanced Package and ilicon combination for low r (on) and high efficiency

More information

Description Absolute Maximum Ratings Parameter Max. Units Thermal Resistance Ratings Parameter Min. Typ. Max. Units

Description Absolute Maximum Ratings Parameter Max. Units Thermal Resistance Ratings Parameter Min. Typ. Max. Units l davanced Process Technology l Ultra Low OnResistance l PChannel MOFET l urface Mount l vailable in Tape & Reel l ynamic dv/dt Rating l Fast witching l LeadFree escription Fourth Generation HEXFETs from

More information

V DS I D (at V GS =10V) R DS(ON) (at V GS = 4.5V) 100% UIS Tested 100% R g Tested. Top View S S S G. Symbol

V DS I D (at V GS =10V) R DS(ON) (at V GS = 4.5V) 100% UIS Tested 100% R g Tested. Top View S S S G. Symbol AON7E 3V NChannel AlphaMO General escription Latest Trench Power AlphaMO (αmo LV) technology Very Low R(on) at.v G Low Gate Charge E protection RoH and HalogenFree Compliant Product ummary V I (at V G

More information

Description Absolute Maximum Ratings Parameter Max. Units Thermal Resistance Ratings Parameter Min. Typ. Max. Units

Description Absolute Maximum Ratings Parameter Max. Units Thermal Resistance Ratings Parameter Min. Typ. Max. Units l davanced Process Technology l Ultra Low OnResistance l PChannel MOFET l urface Mount l vailable in Tape & Reel l ynamic dv/dt Rating l Fast witching l LeadFree escription Fourth Generation HEXFETs from

More information

Converter - Brake - Inverter Module (CBI3) with Trench IGBT technology

Converter - Brake - Inverter Module (CBI3) with Trench IGBT technology Converter - Brake - Inverter Module (CBI3) with Trench IGBT technology 21 22 NTC 8 D11 D13 D15 7 D7 16 15 T1 T3 T5 D1 D3 D5 18 2 17 19 1 2 3 6 5 4 9 D12 D14 D16 14 T7 11 T2 T4 T6 D2 D4 D6 12 13 E72873

More information

< HVIGBT MODULES > CM1500HC-66R. APPLICATION Traction drives, High Reliability Converters / Inverters, DC choppers CM1500HC-66R

< HVIGBT MODULES > CM1500HC-66R. APPLICATION Traction drives, High Reliability Converters / Inverters, DC choppers CM1500HC-66R CMHC-R CMHC-R I C A V CES V -element in a Pack Insulated Type LPT-IGBT / Soft Recovery Diode AlSiC Baseplate APPLICATION Traction drives, High Reliability Converters / Inverters, DC choppers OUTLINE DRAWING

More information

IXTH10N100D2 IXTT10N100D2

IXTH10N100D2 IXTT10N100D2 Depletion Mode MOFET Preliminary Technical Information IXTHND IXTTND X = V I D(on) > A R D(on). N-Channel D TO-7 (IXTH) D D (Tab) ymbol Test Conditions Maximum Ratings X = C to C V V DX = C to C, R = M

More information

Scalloped Square Square Model (Width) # of Resistors Circuit Industry Size Convex Convex Concave

Scalloped Square Square Model (Width) # of Resistors Circuit Industry Size Convex Convex Concave MODE N SERIES N Series Thick Film hip Resistor rrays RoHS ompliant MODE STES Edge Finish / Termination Scalloped Square Square Model (idth) # of Resistors ircuit Industry Size onvex onvex oncave Model

More information

OPERATIONAL AMPLIFIER

OPERATIONAL AMPLIFIER The 74 was designed for use as a summing amplifier, integrator, or amplifier with operating characteristics as a function of the external feedback components. o requency ompensation Required hort ircuit

More information

FEATURES 004 DC VOLTAGE RATING AT + 85 C S CASE CODE

FEATURES 004 DC VOLTAGE RATING AT + 85 C S CASE CODE 195 ishay prague olid Tantalum hip apacitors TNTMOUNT onformal oated TU Qualified, 3001/00/00 - T2 mm, 12mm Tape Packaging to I-1-1 reeling per I 2-3. 7 (17mm) standard 13 (0mm) available U and uropean

More information

Shenzhen Tuofeng Semiconductor Technology Co., Ltd 4402A. N-Channel Enhancement Mode Field Effect Transistor. Features

Shenzhen Tuofeng Semiconductor Technology Co., Ltd 4402A. N-Channel Enhancement Mode Field Effect Transistor. Features 442A N-Channel Enhancement Mode Field Effect Transistor Features V (V) = 2V I = 12A R (ON) < 1mΩ (V G = 4.5V) R (ON) < 12mΩ (V G = 2.5V) G OIC-8 G Absolute Maximum Ratings unless otherwise noted Parameter

More information

Quad SPST CMOS Analog Switches

Quad SPST CMOS Analog Switches Quad PT MO Analog witches ERIPTION The G441/442 monolithic quad analog switches are designed to provide high speed, low error switching of analog and audio signals. The G441 has a normally closed function.

More information

IRF7220PbF. HEXFET Power MOSFET. R DS(on) = 0.012Ω. Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Lead-Free

IRF7220PbF. HEXFET Power MOSFET. R DS(on) = 0.012Ω. Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Lead-Free P - 9572 IRF7220PbF HEXFET Power MOFET Utra Low On-Resistance P-Channe MOFET urface Mount vaiabe in Tape & Ree Lead-Free G 2 3 8 7 4 5 V = -4V R (on) = 0.02Ω escription These P-Channe MOFETs from Internationa

More information

Converter - Brake - Inverter Module (CBI3) with Trench IGBT technology

Converter - Brake - Inverter Module (CBI3) with Trench IGBT technology MUBW 5-17 T8 Converter - Brake - Inverter Module (CBI3) with Trench IGBT technology 21 22 NTC 8 D11 D13 D15 7 D7 16 15 T1 T3 T5 D1 D3 D5 18 2 17 19 1 2 3 6 5 4 9 D12 D14 D16 14 T7 11 T2 T4 T6 D2 D4 D6

More information

T s =25 C 18 A T s =70 C 18 A I Cnom 15 A I CRM I CRM = 3 x I Cnom 45 A V GES V V CC = 800 V. T s =25 C 23 A I C =15A

T s =25 C 18 A T s =70 C 18 A I Cnom 15 A I CRM I CRM = 3 x I Cnom 45 A V GES V V CC = 800 V. T s =25 C 23 A I C =15A MiniSKiiP 1 Features Trench 4 IGBT s Robust and soft freewheeling diodes in CAL technology Highly reliable spring contacts for electrical connections UL recognised file no. E63532 Typical Applications*

More information

P-Channel 30 V (D-S) MOSFET

P-Channel 30 V (D-S) MOSFET SiA42J P-Channel 3 V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) ( ) I (A) Q g (Typ.) - 3.3 at V GS = - V - 2 a nc.6 at V GS = - 4. V - 2 a PowerPAK SC-7-6L-Single FEATURES TrenchFET Power MOSFET New Thermally

More information

CM75MX-12A. NX-Series CIB Module (3Ø Converter + 3Ø Inverter + Brake) 75 Amperes/600 Volts

CM75MX-12A. NX-Series CIB Module (3Ø Converter + 3Ø Inverter + Brake) 75 Amperes/600 Volts Powerex, Inc., 73 Pavilion Lane, Youngwood, Pennsylvania 97 (7) 9-72 www.pwrx.com J L M A E F G M L AA AB C Z AG AH AJ A DETAIL "A" X AD H T U 53 V V P(52-53) R S T (-2) (5-6) (9-) ConvDi 52 5 5 49 48

More information

ACEPACK 2 converter inverter brake, 1200 V, 25 A trench gate field-stop IGBT M series, soft diode and NTC

ACEPACK 2 converter inverter brake, 1200 V, 25 A trench gate field-stop IGBT M series, soft diode and NTC Datasheet ACPACK 2 converter inverter brake, 12 V, 25 A trench gate field-stop IGBT M series, soft diode and NTC Features ACPACK 2 ACPACK 2 power module DBC Cu Al 2 O 3 Cu Converter inverter brake topology

More information

P-Channel 20 V (D-S) MOSFET

P-Channel 20 V (D-S) MOSFET P-Channel 2 V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) ( ) I (A) Q g (Typ.).2 at V GS = - 4. V - 2 a - 2.27 at V GS = - 2. V - 2 a.36 at V GS = -.8 V - 2 a 24. nc.6 at V GS = -. V - 4 Thin PowerPAK SC-7-6L-Single

More information

Values / / 360 ± (125) /125/ / / ,5 4,5 5, ,3 1,9 18 4,3 3,6

Values / / 360 ± (125) /125/ / / ,5 4,5 5, ,3 1,9 18 4,3 3,6 bsolute Maximum Ratings Symbol Conditio ) CES CGR M GES P tot T j, (T stg ) T cop isol humidity climate R GE = kω T HS = 5/7 C T HS = 5/7 C; t p = ms per IGBT, T HS = 5 C max. case operating temperature

More information

V DSS R DS(on) max I D. 100V GS = 10V 7.3A. 58 P A = 25 C Maximum Power Dissipation 2.5 Linear Derating Factor

V DSS R DS(on) max I D. 100V GS = 10V 7.3A. 58 P A = 25 C Maximum Power Dissipation 2.5 Linear Derating Factor P - 95288 HEXFET Power MOSFET pplications High frequency C-C converters Lead-Free l l V SS R S(on) max I 0V 22m:@V GS = V 7.3 Benefits l Low Gate to rain Charge to Reduce Switching Losses l Fully Characterized

More information

MOSFET IRF7855 (KRF7855)

MOSFET IRF7855 (KRF7855) M Type Features OP-8 V (V) = V I = 2 (VG = V) R(ON) < 9.4mΩ (VG = V) 8.5.5 G 2 7 3 4 5.2 +.4 -.2 ource 2 ource 3 ource 4 Gate 5 rain rain 7 rain 8 rain bsolute Maximum Ratings Ta = 25 Parameter ymbol Rating

More information