assess the biasing requirements for transistor amplifiers
|
|
- Jocelin Lang
- 5 years ago
- Views:
Transcription
1 1 INTODUTION In this lesson we examine the properties of the bipolar junction transistor (JT) amd its typical practical characteristics. We then go on to devise circuits in which we can take best advantage of its properties. YOU AIMS At the end of this lesson, you should be able to: use transistor data assess the biasing requirements for transistor amplifiers design biasing circuits. STUDY ADIE This topic assumes a knowledge of the basic operation of a bipolar transistor. It is important to get clear in your mind the direction of current flows in both an npn and a pnp transistor, and the way in which the basic circuit works. See the module Digital and Analogue Devices and ircuits for such basic knowledge.
2 2 TJ HAATEISTIS The basic characteristic of a bipolar transistor is that a small base-emitter current controls a much larger collector-emitter current. FIGUE 1 shows the typical input and output characteristics of a transistor. I I E E I (ase current) I (ollector current) I 5 I4 Increasing I I 3 I 2 I 1 olts E E Linear reakdown E ase-emitter voltage E ollector-emitter voltage Saturation FIG. 1 There are several important points to note. 1. The base-emitter voltage is essentially that of a forward-biased diode. For mid-range values of base current, the voltage level is typically about 0.7. For E less than about 0.5, the collector current is effectively zero, i.e. cut off.
3 3 2. The collector current characteristic shows three regions of operation. (a) At low E (below about 0.25 ), the collector current depends strongly on E and the current gain β I falls sharply. This is I the fully ON state of the transistor, sometimes called the saturation condition. (b) For E greater than about 0.25, the collector current is essentially constant for a given I. This is the normal linear operating region, where β is large and fairly constant, and does not depend on E. However, β does depend on base current to some extent. (c) As E is increased beyond a certain value, current begins to grow quickly leading to excessive dissipation and probable destruction of the transistor. 3. Transistors which are nominally the same type can have a wide range of β values, typically 50 to 300. Therefore, the published collector current characteristics for a particular type of transistor are only an indication of the typical shape. 4. The reverse breakdown voltage of the base-emitter junction is low (for a planar transistor) compared with an ordinary diode (typically 6 ). EMINDE: I E I + I and β I I
4 4 ATINGS The ratings for a transistor are more complex than those for a diode because there are 2 junctions. The most important are: E E I M P TM T JM ollector-emitter voltage with base open circuit everse emitter-base voltage Peak collector current Maximum power dissipation Maximum junction temperature Exceeding any of these ratings can seriously damage the health... of your transistor. IDENTIFIATION Transistors are manufactured in a wide range of packages, as can be seen by a cursory inspection of easily available catalogues. For example, metal can TO 18 types are common, as are plastic encapsulated TO 92 types. The most important thing when building circuits is to connect the transistor correctly. Many transistors have met an unfortunate destiny at the hands of students. When you try to identify the collector, base and emitter leads, do not make assumptions. Examine the outline diagram and, most important, determine which side of the transistor is being shown. Usually, it is the lead side.
5 5 Identification of semiconductors may appear to be a random jumble, but it is not quite so bad as it initially appears. There are two generally recognized systems. (1) JEDE (JOINT ELETON DEIE ENGINEEING OUNIL : USA) Devices have the identification pattern nnnnnn, e.g. 1N4004. The initial number, in general, defines the number of terminals: 1 2 terminal Diodes, Zener diodes 2 3 Transistors 3 4 MOSFETS with substrate connection. The four figure number defines a registered specification, so that many manufacturers can supply nominally the same device (although some parameters may be better than the minima specified). (2) PO ELETON (Europe) Devices have the identification pattern L 1 L 2 N 1 N 2 N 3, e.g. 107 The initial letter, L 1, defines the semiconductor material. A Germanium Silicon Gallium-arsenide D ompound material The second letter, L 2, defines the function. Some examples are listed below.
6 6 A Signal diode Transistor: low power, low frequency D Transistor: high power, low frequency F Transistor: low power, high frequency L Transistor: high power, high frequency N Photo-coupler S Transistor: Low power, switching U Transistor: High power, switching Y ectifier diode Z egulator (Zener) diode The next three characters are three type numbers or a letter and two numbers. E.g. A ZY88 56 is a silicon Zener diode with a Zener voltage of 5.6. What would a FY50 be? an you tell if it is npn or pnp? It is a silicon low power, high frequency transistor. Unfortunately, the polarity of the transistor is not specified by the type number.
7 7 D.. OPEATION The basic operation of the transistor is that a small base current causes a large collector-emitter current to flow. Most amplifier circuits will therefore apply an input current change to the base and generate a large collector current change. This collector current change is converted to a voltage by a resistor in the collector circuit. See FIGUE 2. s o I s o 1 2 s I E(SAT) 0 0 I FIG. 2 If I is zero, then the collector current is zero and o s. As I increases, I increases and the voltage o falls. o s I... ( 1) As I is increased further, o eventually falls to the saturation level and no further significant change occurs. There are therefore three operational situations.
8 8 (a) When I 0, the transistor is in the cut-off state and o s. (b) o > E (SAT) defines the linear amplification range. (c) When o E (SAT), the transistor is fully on. onditions (a) and (c) are used in switching circuits and in binary logic circuits to represent logic 1 and 0. However, in this lesson, we are mainly concerned with linear conditions. In linear circuits, it is important that the output can provide undistorted amplification of the input. In the circuit of FIGUE 2, the output changes from s to E (SAT). Therefore, we should try to bias the circuit so that a zero input signal gives a d.c. level about midway between these limits, i.e.. 2 Then the amplifier has an approximately equal voltage +ve and ve excursion of s about the operating point. 2 iasing the transistor either towards s or E (SAT) may result in distortion of the output. See FIGUE 3. s o 0 I FIG. 3
9 9 It is therefore necessary to provide a d.c. bias circuit to provide some base current to set the quiescent condition of the output. Several circuits are developed and compared in the next section. IAS IUITS LOAD LINES I Load line: slope 1 Q E s 2 s FIG. 4 Load Line FIGUE 4 shows a set of typical collector circuit curves for a JT. It also 1 shows a load line whose slope is, where is a collector resistance. The intercept with the voltage axis is the supply voltage s, and the intercept with the current axis is s. Given the values of s and, the load line is defined and the operating point Q is defined. It is where o is about 1 /2 s. This tells us the required collector current, I, and the corresponding base current, I.
10 10 Alternatively, if the operating current I is defined as well as s, a suitable can be determined. We shall now investigate several methods of biasing the transistor. In each case, we shall assume a constant E. ASE ESISTO IASING I s I o E 0 FIG. 5 emember that the current gain β I I Analysing the circuit of FIGUE 5, o s I... ( 2) So, β I o s s ( ) β s E... ( 3a) β s 1 + β E... ( 3b)
11 11 WOKED EXAMPLE 1 Given that s 10, I 5 ma, E 0.7 and β 100, we must select and to give o 5. Equation (2) can be used to determine. 3 ( ) kΩ Use of equation (3a) permits a value to be determined for ( ) kω So, select 180 kω as the nearest E12 standard value. For these values, o +4.83, which is close to the design value. Now suppose that β can in fact vary (for the type of transistor used) from 50 to 250. What are the limits of o, calculated from equation (3)?
12 12 When β 50, o This bias condition may be acceptable even though well off-centre. When β 250, o 2.92? E(SAT). This negative answer is not possible. The value calculated implies that the amplifier will be biased in the saturation region, the gain β will have fallen to a low value, and the circuit will be useless as an amplifier! Hence, unless is chosen or adjusted for each transistor, the desired bias point will not be achieved. A further difficulty is that both E and β are temperature dependent. Typically, and Δ E 22. m/ ΔT Δβ %/ ΔT These effects both act to cause o to fall. If temperature increases, E falls, so I increases and hence I increases; if β increases with temperature, I increases. For a 10 increase in temperature, how much would the bias voltage change in the previous example?
13 13 If E 0.7 then, for a 10 increase, E is modified as follows If β 100 then, for a 10 rise, β is modified as follows Substitution of these values of E and b into equation (3b) gives the new bias voltage. 104 o So the voltage has fallen a little.
14 14 EMITTE ESISTO STAILIZATION s 1 o I I E IE 2 E E 0 FIG. 6 A better biasing circuit is shown in FIGUE 6. The following equations define the circuit. I β I... (4) o s s s + I E E E + I + I E E + (β + 1) I... ( 5) E E ( ) I +... ( 6) 1 2
15 15 We want to eliminate I and from these equations. Substitute I from equation (4) into (5). s o E + E( + ) ( ) β 1 β... ( 7) earrange equation (6). 1 s 1 I ( 8) 2 Now substitute I from equation (4) and from equation (7) into equation (8). s 1 ( s o) β 1 2 E + E ( β + ) ( ) s o 1... ( 9) β Gather terms in o and simplify. o s β s E E β ( ) ( 10) This is rather tiresome and quite complex. If β is very large, equation (10) simplifies by dividing the right hand term above and below by β, assuming β 1 cancels with (β + 1) and neglecting. β
16 16 o s s E 1+ 1 E ( 11) So o is practically independent of β. In practice, we can ensure this by observing the following design rules. 1. hoose emitter voltage E I E E 0.1 s. 2. To give equal positive and negative output changes, choose o to be midway between s and E ; i.e. o 0.55 s. 3. hoose the current which flows through 1 to be 10 I. WOKED EXAMPLE 2 Taking the example of the previous section, in which 10, I 5 ma, 0. 7and β 100, s E choose the resistors for the emitter resistor stabilization circuit of FIGUE 6, using the rules above.
17 17 1. hoose I E E E s Using this value of E and taking I E I, we may determine E. E Ω Select E 180 Ω as the nearest value in the E12 series. Again taking I E I and using this value of E, the actual value of E may be determined. E hoose o s Hence, 55. I s 3 ( ) Ω Select 820 Ω as a suitable approximation from the E12 series.
18 18 3. Use the values of β and I to determine I. I I β ( ) 50 μ A 100 Make the current through 1 10 I 500 μa The current through 1 may now be used to determine its value as follows. ( s ) E E ( ) kω Select 1 18 kω as the nearest value in the E12 series. Actual current through 1 Hence, ( ) μA current required through 2 467μA I 417μA This current is now used to determine 2.
19 kω Select kω as the nearest value in the E12 series. We have chosen the resistors for the circuit. Now we should check the voltage, o, calculated from equation (10). o ( 100 1) ( ) As a further check, let us see how close equation (11) is to the exact analysis. o So this is correct to within 20%. As a further check, calculate o from equation (10) for β 50 and 250.
20 20 β 50 o 6.42 β 250 o 5.42 So this design mostly eliminates the effects of large changes in β. FEEDAK IAS s o F I I E 0 FIG. 7 Analysis of FIGUE 7 gives the following equations. ( ) ( + ) I + I β 1 I... o s s ( 12) o E + F I... ( 13) Eliminate I from equations (12) and (13). ( ) β + 1 o s o E ( ) F
21 21 earrange and gather terms in o. o s ( ) 1+ β + 1 F + ( ) E β + 1 β F... ( 14) WOKED EXAMPLE 3 Let us once more choose the same numerical example, in which 10, I 5 ma, 0. 7and β 100. s E We should bias o at +5. Use equation (12) to determine the value of. I s o s o I I kΩ This is a standard value in the E12 series. Use this value of in equation (13) to determine F I β F F
22 22 Therefore, F 86 kω Select F 82 kω as the nearest value in the E12 series. Now calculate o for β 50, 100 and 250 from equation (14). β o So this circuit is also effective in stabilizing the bias point.
23 23 SUMMAY OF IAS ONSIDEATIONS The table of FIGUE 8 summarizes the results of the design process, applied to our worked examples. The design is centred on a β of 100. ircuit ias voltage o β 50 β 100 β 250 ase esistance E(SAT) Emitter esistance Feedback esistance FIG. 8 It is clear that both emitter resistance and feedback resistance improve stability. In fact, both are examples of negative feedback. With an emitter resistance, suppose β is increased, then I E increases as does E. Therefore increases, but then I E decreases because more current flows through 2 and less through 1. So the circuit is stabilized. In the case of the feedback resistor, suppose again that β increases. The value of I increases and o falls, so reducing I and hence I. The biasing rules discussed in this lesson apply also to pnp transistors, but all voltages and currents are reversed.
24 24 SELF-ASSESSMENT QUESTIONS 1. The following table shows the test results for an npn JT. arefully plot the following characteristics on A4 graph paper. (a) I against E for constant I (b) I against E N.. etain these curves, since we will use them in a future lesson! ase current I (μa) ase -emitter oltage () ollector current I (ma) at E () Draw a load line for s 5 and a current of 100 ma. Decide on a suitable biased operating point for o for base resistor biasing. Deduce the required base current and collector resistance. hoose a suitable base resistance.
25 25 2. For a transistor with gain β 125 and E 0.65, design the following bias circuits for a supply voltage of s 15 and I 15 ma at the bias point. (a) ase resistor bias (b) Emitter resistor bias (c) Feedback bias. hoose resistors from the E12 range. In each case, calculate the collector voltage from the chosen resistor values and estimate the error between the values obtained and the target bias.
26 26 ANSWES TO SELF-ASSESSMENT QUESTIONS 1. The required curves will not be plotted here. However, using these curves and the load line for a E of 2.5, there is a close intercept with the I 200 μa curve. If we take this as our design target, then I 48 ma. For I 200 μa, E 0.74 (from the curves). 5 The inverse of the slope of the load line Ω. hoose the nearest E12 value. 47Ω The base resistor value is calculated as follows. ( s ) ( E ) I kΩ hoose 22 kω as the nearest E12 standard value. 2. (a) ase esistor ias For s 15, then o 7.5. So, I ( )
27 27 Hence, 500Ω Select 470 Ω as the nearest value in the E12 series. Now, I I β μA Therefore, s E I kω Select 120 kω as the nearest value in the E12 series. alculate o from equation (3). o s 1 β + β E Error (b) Emitter esistor Stabilization hoose E s
28 28 So, E I E E I E Ω This value, E 100 Ω, is a standard value of E12 series. hoose o s Since I o s s o I Ω Select 470 Ω as the nearest value in the E12 series. Now, I I β μA Make current through 1 10 I 1.2 ma. Therefore, ( ) s s E E ( ) kω Select 1 10 kω as the nearest value in the E12 series.
29 29 Actual current through 1 s ma So current through I ma ( ) Hence, kω Select kω as the nearest value in the E12 series. Now check target o from equation (10). o s β s E E β ( ) o ( 125 1) ( ) Error This is very close!
30 30 (c) Feedback Stabilization We should bias o at 1 /2 s 7.5. is the same as for base resistor biasing, i.e. 470 Ω. An expression for F can be obtained from equation (13) of the lesson text. I I o E + F E + F β F β ( o E) I Put values into the above expression. F (.. ) kΩ Select F 56 kω as the nearest value in the E12 series. Now check the target o from equation (14). o s ( ) 1+ β + 1 F + ( ) E β + 1 β F o ( ) ( ) Error Again, this is a good result!
31 31 SUMMAY To be able to make the transistor operate as an amplifier, we need to provide base bias. The three ways in which this can be done are: base resistor bias emitter resistor stabilization feedback bias. The first is not very effective because transistor characteristics vary so much, but the other two give reasonable stability against changes in current gain, β. It is important to be able to design bias circuits using the rules of thumb provided.
Chapter 10 Instructor Notes
G. izzoni, Principles and Applications of lectrical ngineering Problem solutions, hapter 10 hapter 10 nstructor Notes hapter 10 introduces bipolar junction transistors. The material on transistors has
More informationChapter 9 Bipolar Junction Transistor
hapter 9 ipolar Junction Transistor hapter 9 - JT ipolar Junction Transistor JT haracteristics NPN, PNP JT D iasing ollector haracteristic and Load Line ipolar Junction Transistor (JT) JT is a three-terminal
More informationanalyse and design a range of sine-wave oscillators understand the design of multivibrators.
INTODUTION In this lesson, we investigate some forms of wave-form generation using op amps. Of course, we could use basic transistor circuits, but it makes sense to simplify the analysis by considering
More informationBipolar Junction Transistor (BJT) - Introduction
Bipolar Junction Transistor (BJT) - Introduction It was found in 1948 at the Bell Telephone Laboratories. It is a three terminal device and has three semiconductor regions. It can be used in signal amplification
More informationBiasing BJTs CHAPTER OBJECTIVES 4.1 INTRODUCTION
4 DC Biasing BJTs CHAPTER OBJECTIVES Be able to determine the dc levels for the variety of important BJT configurations. Understand how to measure the important voltage levels of a BJT transistor configuration
More informationElectronic Circuits. Transistor Bias Circuits. Manar Mohaisen Office: F208 Department of EECE
lectronic ircuits Transistor Bias ircuits Manar Mohaisen Office: F208 mail: manar.subhi@kut.ac.kr Department of Review of the Precedent Lecture Bipolar Junction Transistor (BJT) BJT haracteristics and
More informationElectronic Circuits 1. Transistor Devices. Contents BJT and FET Characteristics Operations. Prof. C.K. Tse: Transistor devices
Electronic Circuits 1 Transistor Devices Contents BJT and FET Characteristics Operations 1 What is a transistor? Three-terminal device whose voltage-current relationship is controlled by a third voltage
More informationChapter 2 - DC Biasing - BJTs
Objectives Chapter 2 - DC Biasing - BJTs To Understand: Concept of Operating point and stability Analyzing Various biasing circuits and their comparison with respect to stability BJT A Review Invented
More informationAt point G V = = = = = = RB B B. IN RB f
Common Emitter At point G CE RC 0. 4 12 0. 4 116. I C RC 116. R 1k C 116. ma I IC 116. ma β 100 F 116µ A I R ( 116µ A)( 20kΩ) 2. 3 R + 2. 3 + 0. 7 30. IN R f Gain in Constant Current Region I I I C F
More informationDEPARTMENT OF ECE UNIT VII BIASING & STABILIZATION AMPLIFIER:
UNIT VII IASING & STAILIZATION AMPLIFIE: - A circuit that increases the amplitude of given signal is an amplifier - Small ac signal applied to an amplifier is obtained as large a.c. signal of same frequency
More informationChapter 13 Small-Signal Modeling and Linear Amplification
Chapter 13 Small-Signal Modeling and Linear Amplification Microelectronic Circuit Design Richard C. Jaeger Travis N. Blalock 1/4/12 Chap 13-1 Chapter Goals Understanding of concepts related to: Transistors
More informationDC Biasing. Dr. U. Sezen & Dr. D. Gökçen (Hacettepe Uni.) ELE230 Electronics I 15-Mar / 59
Contents Three States of Operation BJT DC Analysis Fixed-Bias Circuit Emitter-Stabilized Bias Circuit Voltage Divider Bias Circuit DC Bias with Voltage Feedback Various Dierent Bias Circuits pnp Transistors
More informationElectronic Circuits. Bipolar Junction Transistors. Manar Mohaisen Office: F208 Department of EECE
Electronic Circuits Bipolar Junction Transistors Manar Mohaisen Office: F208 Email: manar.subhi@kut.ac.kr Department of EECE Review of Precedent Class Explain the Operation of the Zener Diode Explain Applications
More informationTransistors. Lesson #9 Chapter 4. BME 372 Electronics I J.Schesser
Transistors Lesson #9 hapter 4 252 JT egions of Operation 7.03 6.03 5.03 4.03 3.03 2.03 1.03 0.00 Saturation Active i amps i =50 ma 40 ma 30 ma 20 ma 10 ma 0 ma 0 1 2 3 4 5 6 7 8 9 10 v volts utoff There
More informationForward-Active Terminal Currents
Forward-Active Terminal Currents Collector current: (electron diffusion current density) x (emitter area) diff J n AE qd n n po A E V E V th ------------------------------ e W (why minus sign? is by def.
More informationChapter 2. - DC Biasing - BJTs
Chapter 2. - DC Biasing - BJTs Objectives To Understand : Concept of Operating point and stability Analyzing Various biasing circuits and their comparison with respect to stability BJT A Review Invented
More informationIntroduction to Transistors. Semiconductors Diodes Transistors
Introduction to Transistors Semiconductors Diodes Transistors 1 Semiconductors Typical semiconductors, like silicon and germanium, have four valence electrons which form atomic bonds with neighboring atoms
More informationTransistor Characteristics and A simple BJT Current Mirror
Transistor Characteristics and A simple BJT Current Mirror Current-oltage (I-) Characteristics Device Under Test DUT i v T T 1 R X R X T for test Independent variable on horizontal axis Could force current
More informationBasic Electronics Prof. Dr. Chitralekha Mahanta Department of Electronics and Communication Engineering Indian Institute of Technology, Guwahati
Basic Electronics Prof. Dr. Chitralekha Mahanta Department of Electronics and Communication Engineering Indian Institute of Technology, Guwahati Module: 2 Bipolar Junction Transistors Lecture-4 Biasing
More informationCARLETON UNIVERSITY. FINAL EXAMINATION December DURATION 3 HOURS No. of Students 130
ALETON UNIVESITY FINAL EXAMINATION December 005 DUATION 3 HOUS No. of Students 130 Department Name & ourse Number: Electronics ELE 3509 ourse Instructor(s): Prof. John W. M. ogers and alvin Plett AUTHOIZED
More information(e V BC/V T. α F I SE = α R I SC = I S (3)
Experiment #8 BJT witching Characteristics Introduction pring 2015 Be sure to print a copy of Experiment #8 and bring it with you to lab. There will not be any experiment copies available in the lab. Also
More informationCHAPTER.4: Transistor at low frequencies
CHAPTER.4: Transistor at low frequencies Introduction Amplification in the AC domain BJT transistor modeling The re Transistor Model The Hybrid equivalent Model Introduction There are three models commonly
More informationCharacteristic Symbol Value Unit Output Current I out 150 ma
LBNB ma LOAD SWITH FEATURING OMPLEMENTARY BIPOLAR TRANSISTORS NEW PRODUT General Description LMNB is best suited for applications where the load needs to be turned on and off using control circuits like
More informationVI. Transistor amplifiers: Biasing and Small Signal Model
VI. Transistor amplifiers: iasing and Small Signal Model 6.1 Introduction Transistor amplifiers utilizing JT or FET are similar in design and analysis. Accordingly we will discuss JT amplifiers thoroughly.
More informationKOM2751 Analog Electronics :: Dr. Muharrem Mercimek :: YTU - Control and Automation Dept. 1 4 DC BIASING BJTS (CONT D II )
KOM2751 Analog Electronics :: Dr. Muharrem Mercimek :: YTU - Control and Automation Dept. 1 4 DC BIASING BJTS (CONT D II ) Most of the content is from the textbook: Electronic devices and circuit theory,
More informationTunnel Diodes (Esaki Diode)
Tunnel Diodes (Esaki Diode) Tunnel diode is the p-n junction device that exhibits negative resistance. That means when the voltage is increased the current through it decreases. Esaki diodes was named
More informationfigure shows a pnp transistor biased to operate in the active mode
Lecture 10b EE-215 Electronic Devices and Circuits Asst Prof Muhammad Anis Chaudhary BJT: Device Structure and Physical Operation The pnp Transistor figure shows a pnp transistor biased to operate in the
More informationBiasing the CE Amplifier
Biasing the CE Amplifier Graphical approach: plot I C as a function of the DC base-emitter voltage (note: normally plot vs. base current, so we must return to Ebers-Moll): I C I S e V BE V th I S e V th
More informationS.E. Sem. III [ETRX] Electronic Circuits and Design I
S.E. Sem. [ETRX] Electronic ircuits and Design Time : 3 Hrs.] Prelim Paper Solution [Marks : 80 Q.1(a) What happens when diode is operated at high frequency? [5] Ans.: Diode High Frequency Model : This
More informationTransistor amplifiers: Biasing and Small Signal Model
Transistor amplifiers: iasing and Small Signal Model Transistor amplifiers utilizing JT or FT are similar in design and analysis. Accordingly we will discuss JT amplifiers thoroughly. Then, similar FT
More informationUNIVERSITY OF CALIFORNIA, BERKELEY College of Engineering Department of Electrical Engineering and Computer Sciences
UNIVERSITY OF CALIFORNIA, BERKELEY College of Engineering Department of Electrical Engineering and Computer Sciences EE 105: Microelectronic Devices and Circuits Spring 2008 MIDTERM EXAMINATION #1 Time
More informationFinal Examination EE 130 December 16, 1997 Time allotted: 180 minutes
Final Examination EE 130 December 16, 1997 Time allotted: 180 minutes Problem 1: Semiconductor Fundamentals [30 points] A uniformly doped silicon sample of length 100µm and cross-sectional area 100µm 2
More informationCircle the one best answer for each question. Five points per question.
ID # NAME EE-255 EXAM 3 November 8, 2001 Instructor (circle one) Talavage Gray This exam consists of 16 multiple choice questions and one workout problem. Record all answers to the multiple choice questions
More informationClass AB Output Stage
Class AB Output Stage Class AB amplifier Operation Multisim Simulation - VTC Class AB amplifier biasing Widlar current source Multisim Simulation - Biasing 1 Class AB Operation v I V B (set by V B ) Basic
More informationChapter 13 Bipolar Junction Transistors
Chapter 3 ipolar Junction Transistors Goal. ipolar Junction Transistor Operation in amplifier circuits. 2. Load-line Analysis & Nonlinear Distortion. 3. Large-signal equialent circuits to analyze JT circuits.
More informationJunction Bipolar Transistor. Characteristics Models Datasheet
Junction Bipolar Transistor Characteristics Models Datasheet Characteristics (1) The BJT is a threeterminal device, terminals are named emitter, base and collector. Small signals, applied to the base,
More informationESE319 Introduction to Microelectronics. Output Stages
Output Stages Power amplifier classification Class A amplifier circuits Class A Power conversion efficiency Class B amplifier circuits Class B Power conversion efficiency Class AB amplifier circuits Class
More information55:041 Electronic Circuits The University of Iowa Fall Final Exam
Final Exam Name: Score Max: 135 Question 1 (1 point unless otherwise noted) a. What is the maximum theoretical efficiency for a class-b amplifier? Answer: 78% b. The abbreviation/term ESR is often encountered
More informationMP6901 MP6901. High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching. Maximum Ratings (Ta = 25 C)
TOSHIBA Power Transistor Module Silicon Epitaxial Type (Darlington power transistor in ) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching. Industrial Applications
More informationOptocoupler, Phototransistor Output, with Base Connection
Vishay Semiconductors Optocoupler, Phototransistor Output, FEATURES A 6 B Isolation test voltage 5300 V RMS Interfaces with common logic families C NC 2 3 V D E 5 4 C E Input-output coupling capacitance
More informationECE-342 Test 2 Solutions, Nov 4, :00-8:00pm, Closed Book (one page of notes allowed)
ECE-342 Test 2 Solutions, Nov 4, 2008 6:00-8:00pm, Closed Book (one page of notes allowed) Please use the following physical constants in your calculations: Boltzmann s Constant: Electron Charge: Free
More informationEE 330 Lecture 20. Bipolar Device Modeling
330 Lecture 20 ipolar Device Modeling xam 2 Friday March 9 xam 3 Friday April 13 Review from Last Lecture ipolar Transistors npn stack pnp stack ipolar Devices Show asic Symmetry lectrical Properties not
More informationDiodes. EE223 Digital & Analogue Electronics Derek Molloy 2012/2013.
Diodes EE223 Digital & Analogue Electronics Derek Molloy 2012/2013 Derek.Molloy@dcu.ie Diodes: A Semiconductor? Conductors Such as copper, aluminium have a cloud of free electrons weak bound valence electrons
More informationEE 321 Analog Electronics, Fall 2013 Homework #8 solution
EE 321 Analog Electronics, Fall 2013 Homework #8 solution 5.110. The following table summarizes some of the basic attributes of a number of BJTs of different types, operating as amplifiers under various
More informationSection 5.4 BJT Circuits at DC
12/3/2004 section 5_4 JT Circuits at DC 1/1 Section 5.4 JT Circuits at DC Reading Assignment: pp. 421-436 To analyze a JT circuit, we follow the same boring procedure as always: ASSUME, ENFORCE, ANALYZE
More information6.301 Solid-State Circuits Recitation 22: More on Transimpedance Amplifiers, and Intro to Zener Diode References Prof. Joel L.
Recitation 22: More on Transimpedance Amplifiers, and Intro to Zener Diode References Before we leave the topic of transimpedance amplifiers completely, there is one biasing mystery that is worth clearing
More informationProf. Paolo Colantonio a.a
Prof. Paolo olantonio a.a. 2011 12 The D bias point is affected by thermal issue due to the active device parameter variations with temperature I 1 I I 0 I [ma] V R } I 5 } I 4 } I 3 Q 2 } I 2 Q 1 } I
More informationSemiconductor Physics fall 2012 problems
Semiconductor Physics fall 2012 problems 1. An n-type sample of silicon has a uniform density N D = 10 16 atoms cm -3 of arsenic, and a p-type silicon sample has N A = 10 15 atoms cm -3 of boron. For each
More informationLecture 7: Transistors and Amplifiers
Lecture 7: Transistors and Amplifiers Hybrid Transistor Model for small AC : The previous model for a transistor used one parameter (β, the current gain) to describe the transistor. doesn't explain many
More informationIGBT Designer s Manual
IGBT Designer s Manual Data Sheets The IGBT devices listed in this Designer s Manual represent International Rectifier s IGBT line as of August, 994. The data presented in this manual supersedes all previous
More informationChapter 3 Output stages
Chapter 3 utput stages 3.. Goals and properties 3.. Goals and properties deliver power into the load with good efficacy and small power dissipate on the final transistors small output impedance maximum
More information6.012 Electronic Devices and Circuits
Page 1 of 12 YOUR NAME Department of Electrical Engineering and Computer Science Massachusetts Institute of Technology 6.012 Electronic Devices and Circuits FINAL EXAMINATION Open book. Notes: 1. Unless
More informationID # NAME. EE-255 EXAM 3 April 7, Instructor (circle one) Ogborn Lundstrom
ID # NAME EE-255 EXAM 3 April 7, 1998 Instructor (circle one) Ogborn Lundstrom This exam consists of 20 multiple choice questions. Record all answers on this page, but you must turn in the entire exam.
More informationOptocoupler, Phototransistor Output, with Base Connection
Vishay Semiconductors Optocoupler, Phototransistor Output, 2842 DESCRIPTION i79004-4 Each optocoupler consists of gallium arsenide infrared LED and a silicon NPN phototransistor. AGENCY APPROVALS Underwriters
More informationCapacitors Diodes Transistors. PC200 Lectures. Terry Sturtevant. Wilfrid Laurier University. June 4, 2009
Wilfrid Laurier University June 4, 2009 Capacitor an electronic device which consists of two conductive plates separated by an insulator Capacitor an electronic device which consists of two conductive
More information6.012 Electronic Devices and Circuits
Page 1 of 10 YOUR NAME Department of Electrical Engineering and Computer Science Massachusetts Institute of Technology 6.012 Electronic Devices and Circuits Exam No. 2 Thursday, November 5, 2009 7:30 to
More informationHomework Assignment 08
Homework Assignment 08 Question 1 (Short Takes) Two points each unless otherwise indicated. 1. Give one phrase/sentence that describes the primary advantage of an active load. Answer: Large effective resistance
More informationType Marking Pin Configuration Package SMBT2222A/MMBT2222A s1p 1 = B 2 = E 3 = C SOT23
SMBTA/MMBTA NPN Silicon Switching Transistor Low collectoremitter saturation voltage omplementary type: SMBT97A / MMBT97A (PNP) 1 Pbfree (RoHS compliant) package Qualified according AE Q1 Type Marking
More informationPhysics Department. CfE Higher Unit 3: Electricity. Problem Booklet
Physics Department CfE Higher Unit 3: Electricity Problem Booklet Name Class 1 Contents Exercise 1: Monitoring and measuring a.c. Exercise 2: Current, voltage, power and resistance Exercise 3: Electrical
More informationSOME USEFUL NETWORK THEOREMS
APPENDIX D SOME USEFUL NETWORK THEOREMS Introduction In this appendix we review three network theorems that are useful in simplifying the analysis of electronic circuits: Thévenin s theorem Norton s theorem
More informationDATA SHEET. BC556; BC557 PNP general purpose transistors DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 1997 Mar 27.
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 Supersedes data of 1997 Mar 27 FEATURES Low current (max. 100 ma) Low voltage (max. 65 V). APPLICATIONS General purpose switching and amplification.
More informationLead-free Green C 2 B 1 E 1 E 2 B 2 C T A = 25 C unless otherwise specified
Lead-free Green MMDT2227M OMPLEMENTARY NPN / PNP SMALL SIGNAL SURFAE MOUNT TRANSISTOR Features omplementary Pair Epitaxial Planar Die onstruction One 2222A Type (NPN), One 2907A Type (PNP) Ideal for Low
More informationELEC 3908, Physical Electronics, Lecture 18. The Early Effect, Breakdown and Self-Heating
ELEC 3908, Physical Electronics, Lecture 18 The Early Effect, Breakdown and Self-Heating Lecture Outline Previous 2 lectures analyzed fundamental static (dc) carrier transport in the bipolar transistor
More informationVidyalankar S.E. Sem. III [EXTC] Analog Electronics - I Prelim Question Paper Solution
. (a) S.E. Sem. [EXTC] Analog Electronics - Prelim Question Paper Solution Comparison between BJT and JFET BJT JFET ) BJT is a bipolar device, both majority JFET is an unipolar device, electron and minority
More informationCNY17F-4. Pb Pb-free. Optocoupler, Phototransistor Output, No Base Connection. Vishay Semiconductors
Optocoupler, Phototransistor Output, No Base Connection Features Breakdown Voltage, 500 V RMS No Base Terminal Connection for Improved Common Mode Interface Immunity Long Term Stability Industry Standard
More informationActive Circuits: Life gets interesting
Actie Circuits: Life gets interesting Actie cct elements operational amplifiers (OP AMPS) and transistors Deices which can inject power into the cct External power supply normally comes from connection
More informationE 1 C 2 C 1 E 2 B 2 B 1 B 2 E 2
OMPLEMENTARY NPN / PNP SMALL SIGNAL SURFAE MOUNT TRANSISTOR Features NEW PRODUT omplementary Pair Epitaxial Planar Die onstruction One 2222A Type (NPN), One 297A Type (PNP) Ideal for Low Power Amplification
More informationMod. Sim. Dyn. Sys. Amplifiers page 1
AMPLIFIERS A circuit containing only capacitors, amplifiers (transistors) and resistors may resonate. A circuit containing only capacitors and resistors may not. Why does amplification permit resonance
More informationabsolute maximum ratings at 25 C case temperature (unless otherwise noted)
,, B, C, D Designed for Complementary Use with BDW84, BDW84A, BDW84B, BDW84C and BDW84D W at C Case Temperature A Continuous Collector Current Minimum h FE of 70 at 3, 6 A B C E SOT-93 PACKAGE (TOP IEW)
More informationCHAPTER 13. Solutions for Exercises
HPT 3 Solutions for xercises 3. The emitter current is gien by the Shockley equation: i S exp VT For operation with i, we hae exp >> S >>, and we can write VT i S exp VT Soling for, we hae 3.2 i 2 0 26ln
More informationLab 9/14/2012. Lab Power / Energy Series / Parallel Small Signal Applications. Outline. Power Supply
Outline Session 2: Analog Circuits Lab Power / Energy Series / Parallel Small Signal Applications Lab hits Power Supply, Oscilloscope, Breadboard, Multimeters Energy Power an Energy for, L, C Series /
More informationPhysics (Theory) There are 30 questions in total. Question Nos. 1 to 8 are very short answer type questions and carry one mark each.
Physics (Theory) Time allowed: 3 hours] [Maximum marks:70 General Instructions: (i) All questions are compulsory. (ii) (iii) (iii) (iv) (v) There are 30 questions in total. Question Nos. to 8 are very
More informationLecture 18 - The Bipolar Junction Transistor (II) Regimes of Operation. November 10, 2005
6.012 - Microelectronic Devices and ircuits - Fall 2005 Lecture 18-1 Lecture 18 - The ipolar Junction Transistor (II) ontents: 1. Regimes of operation. Regimes of Operation November 10, 2005 2. Large-signal
More informationFarr High School HIGHER PHYSICS. Unit 3 Electricity. Question Booklet
Farr High School HIGHER PHYSICS Unit 3 Electricity Question Booklet 1 MONITORING ND MESURING.C. 1. What is the peak voltage of the 230 V mains supply? The frequency of the mains supply is 50 Hz. How many
More informationCM600HX-12A. APPLICATION General purpose Inverters, Servo Amplifiers, Power supply, etc. CM600HX-12A. IC...600A VCES...600V Single
MHX-1A MHX-1A I...A S... Single Flatbase Type / Insulated Package / opper (non-plating) base plate RoHS Directive compliant APPLIATION General purpose Inverters, Servo Amplifiers, Power supply, etc. OUTLIN
More informationMod. Sim. Dyn. Sys. Amplifiers page 1
AMPLIFIERS A circuit containing only capacitors, amplifiers (transistors) and resistors may resonate. A circuit containing only capacitors and resistors may not. Why does amplification permit resonance
More informationMMIX4B12N300 V CES = 3000V. = 11A V CE(sat) 3.2V. High Voltage, High Gain BIMOSFET TM Monolithic Bipolar MOS Transistor
High Voltage, High Gain BIMOSFET TM Monolithic Bipolar MOS Transistor Preliminary Technical Information V CES = 3V 11 = 11A V CE(sat) 3.2V C1 C2 (Electrically Isolated Tab) G1 E1C3 G2 E2C G3 G E3E C1 C2
More informationBD245, BD245A, BD245B, BD245C NPN SILICON POWER TRANSISTORS
, A, B, C Designed for Complementary Use with the BD26 Series W at 25 C Case Temperature 0 A Continuous Collector Current 5 A Peak Collector Current Customer-Specified Selections Available B C E SOT-9
More information(Refer Slide Time: 1:41)
Analog Electronic Circuits Professor S. C. Dutta Roy Department of Electrical Engineering Indian Institute of Technology Delhi Lecture no 13 Module no 01 Midband Analysis of CB and CC Amplifiers We are
More informationSymbol Offers Units. R Resistance, ohms. C Capacitance F, Farads. L Inductance H, Henry. E, I Voltage, Current V, Volts, A, Amps. D Signal shaping -
Electrical Circuits HE 13.11.018 1. Electrical Components hese are tabulated below Component Name Properties esistor Simplest passive element, no dependence on time or frequency Capacitor eactive element,
More informationPhototransistor. Industry Standard Single Channel 6 Pin DIP Optocoupler
Phototransistor Industry Standard Single Channel 6 Pin DIP Optocoupler DEVICE TYPES Part No. CTR % Min. Part No. CTR % Min. 4N25 2 MCT2 2 4N26 2 MCT2E 2 4N27 MCT27 5 4N28 MCT27 45 9 4N35 MCT272 75 5 4N36
More informationESE319 Introduction to Microelectronics. BJT Biasing Cont.
BJT Biasing Cont. Biasing for DC Operating Point Stability BJT Bias Using Emitter Negative Feedback Single Supply BJT Bias Scheme Constant Current BJT Bias Scheme Rule of Thumb BJT Bias Design 1 Simple
More informationThey keep the voltage the same and use this circuit to measure the current. Variable resistor. Reading on ammeter in amps
1 Ksenia and Eva investigate five different variable resistors. They set each variable resistor to the maximum resistance. They keep the voltage the same and use this circuit to measure the current. A
More informationFYSE400 ANALOG ELECTRONICS
YSE400 ANALOG ELECTONCS LECTUE 3 Bipolar Sub Circuits 1 BPOLA SUB CCUTS Bipolar Current Sinks and -Sources Transistor operates in forwardactive region. < < sat CE CN max CE < < + BN CN BN max CE N N N
More informationIRGPC50F Fast Speed IGBT
INSULATED GATE BIPOLAR TRANSISTOR PD - 9.695A Fast Speed IGBT Features Switching-loss rating includes all "tail" losses Optimized for medium operating frequency ( to khz) See Fig. for urrent vs. Frequency
More informationGEORGIA INSTITUTE OF TECHNOLOGY School of Electrical and Computer Engineering
NAME: GEORGIA INSTITUTE OF TECHNOLOGY School of Electrical and Computer Engineering ECE 4430 First Exam Closed Book and Notes Fall 2002 September 27, 2002 General Instructions: 1. Write on one side of
More information(Refer Slide Time: 1:22)
Analog Electronic Circuits Professor S. C. Dutta Roy Department of Electrical Engineering Indian Institute of Technology Delhi Lecture no 19 Module no 01 Problem Session 5 on Frequency Response of Small
More informationDATA SHEET. BFQ225 NPN video transistor DISCRETE SEMICONDUCTORS Sep 04
DISCRETE SEMICONDUCTORS DATA SHEET Supersedes data of 1996 July 18 File under Discrete Semiconductors, SC5 1996 Sep 4 APPLICATIONS Primarily intended for cascode output and buffer stages in high resolution
More informationII/IV B.Tech (Regular/Supplementary) DEGREE EXAMINATION. Answer ONE question from each unit.
14ECEI302/EC 212 1. Answer all questions (1X12=12 Marks) a What are the applications of linked list? b Compare singly linked list and doubly linked list. c Define ADT. d What are the basic operations of
More informationHomework Assignment 09
Homework Assignment 09 Question 1 (Short Takes) Two points each unless otherwise indicated. 1. What is the 3-dB bandwidth of the amplifier shown below if r π = 2.5K, r o = 100K, g m = 40 ms, and C L =
More informationDATA SHEET. BFQ226 NPN video transistor DISCRETE SEMICONDUCTORS Sep 04
DISCRETE SEMICONDUCTORS DATA SHEET Supersedes data of 1996 July 18 File under Discrete Semiconductors, SC5 1996 Sep 4 APPLICATIONS Primarily intended for cascode output and buffer stages in high resolution
More informationEC/EE DIGITAL ELECTRONICS
EC/EE 214(R-15) Total No. of Questions :09] [Total No. of Pages : 02 II/IV B.Tech. DEGREE EXAMINATIONS, DECEMBER- 2016 First Semester EC/EE DIGITAL ELECTRONICS Time: Three Hours 1. a) Define Encoder Answer
More informationMMBT2369A NPN Switching Transistor
MMBT69A NPN Switching Transistor Description This device is designed for high speed saturated switching at collector currents of ma to ma. Sourced from process. SOT-. Base. Emitter. ollector MMBT69A NPN
More informationGeneral Purpose Transistors
General Purpose Transistors NPN and PNP Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT 33/SC which is designed for low power surface mount
More informationEE 230 Lecture 31. THE MOS TRANSISTOR Model Simplifcations THE Bipolar Junction TRANSISTOR
EE 23 Lecture 3 THE MOS TRANSISTOR Model Simplifcations THE Bipolar Junction TRANSISTOR Quiz 3 Determine I X. Assume W=u, L=2u, V T =V, uc OX = - 4 A/V 2, λ= And the number is? 3 8 5 2? 6 4 9 7 Quiz 3
More informationLecture 18 - The Bipolar Junction Transistor (II) Regimes of Operation April 19, 2001
6.012 - Microelectronic Devices and ircuits - Spring 2001 Lecture 18-1 Lecture 18 - The ipolar Junction Transistor (II) Regimes of Operation April 19, 2001 ontents: 1. Regimes of operation. 2. Large-signal
More informationNATIONAL QUALIFICATIONS CURRICULUM SUPPORT. Physics. Electricity. Questions and Solutions. James Page Arthur Baillie [HIGHER]
NTIONL QULIFICTIONS CURRICULUM SUPPORT Physics Electricity Questions and Solutions James Page rthur Baillie [HIGHER] The Scottish Qualifications uthority regularly reviews the arrangements for National
More informationBCR191.../SEMB1 BCR191/F/L3 BCR191T/W BCR191S SEMB1. Type Marking Pin Configuration Package BCR191 BCR191F BCR191L3 2=E 2=E 2=E =C 3=C 3=C
PNP Silicon Digital Transistor Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (R = kω, R = kω ) For 6PIN packages: two (galvanic) internal isolated transistors with
More informationType Marking Pin Configuration Package SMBT2907A/MMBT2907A s2f 1 = B 2 = E 3 = C SOT23
PNP Silicon Switching Transistor Low collectoremitter saturation voltage omplementary type: SMBTA / MMBTA (NPN) 1 Pbfree (RoHS compliant) package 1) Qualified according AE Q1 Type Marking Pin onfiguration
More information