Ω μ. PKG CODE M AX 5128E LA+ -40 C to +85 C 8 μdfn AAF L822-1 TEMP RANGE PIN - PA C K A G E TOP MARK PART. Maxim Integrated Products 1
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1 ; Rev 2; 6/7 μ Ω μ μ μ Ω μ PART TEMP RANGE PIN - PA C K A G E TOP MARK PKG M AX 5128E A+ -4 C to +85 C 8 μdfn AAF H V CC GND POR 7 7-BIT NV MEMORY 128-POSITION DER 128 TAPS W UP DN SERIA INTERFACE 7 MAX5128 Maxim Integrated Products 1
2 μ ABSOUTE MAXIMUM RATINGS V CC to GND...-.3V to +6.V UP and DN to GND...-.3V to (V CC +.3V) H,, and W to GND...-.3V to (V CC +.3V) Maximum Continuous Current into H,, and W...±.5mA Maximum Continuous Current into All Other Pins...±5mA Continuous Power Dissipation (T A = +7 C) 8-Pin μdfn (derate 4.7mW/ C above +7 C) mW Operating Temperature Range...-4 C to +85 C Junction Temperature C Storage Temperature Range...-6 C to +15 C ead Temperature (soldering, 1s)...+3 C Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. EECTRICA CHARACTERISTICS (V CC = +2.7V to +5.25V, H = V CC, = GND, T A = -4 C to +85 C. Typical values are at V CC = +5.V, T A = +25 C, unless otherwise noted.) (Note 1) PARAMETER SYMBO CONDITIONS MIN TYP MAX UNITS DC PERFORMANCE (voltage-divider mode) Resolution N 7 Bits Integral Nonlinearity IN (Note 2) ±1. SB Differential Nonlinearity DN (Note 2) ±1. SB End-to-End Resistance Temperature Coefficient TC R 5 ppm/ C Ratiometric Resistance Temperature Coefficient 5 ppm/ C Full-Scale Error FSE -3 SB Zero-Scale Error ZSE +2 SB DC PERFORMANCE (variable-resistor mode) Integral Nonlinearity IN (Note 3) ±1.75 SB Differential Nonlinearity DN (Note 3) ±1 SB DC PERFORMANCE (resistor characteristics) Wiper Resistance R W (Note 4).6.8 kω Wiper Capacitance C W 2 pf End-to-End Resistance R H kω DIGITA INPUTS (UP, DN) 3.4V V CC 5.25V 2.4 Input-High Voltage (Note 5) V IH.7 x V 2.7V V CC < 3.4V V CC Input-ow Voltage V I (Note 5).8 V Input eakage Current I IN ±1 μa Input Capacitance C IN 5 pf DYNAMIC CHARACTERISTICS Wiper -3dB Bandwidth f 3dB (Note 6) 4 khz THD Plus Noise THD+N V H =.3V RMS, f = 1kHz, wiper set to midscale.2 % 2
3 μ EECTRICA CHARACTERISTICS (continued) (V CC = +2.7V to +5.25V, H = V CC, = GND, T A = -4 C to +85 C. Typical values are at V CC = +5.V, T A = +25 C, unless otherwise noted.) (Note 1) PARAMETER SYMBO CONDITIONS MIN TYP MAX UNITS NONVOATIE MEMORY REIABIITY Data Retention T A = +85 C 5 Years Endurance T A = +25 C 8, T A = +85 C 5, Stores POWER SUPPY Supply Voltage V CC V Average Programming Current I PG During nonvolatile write only; digital inputs = V CC or GND 22 4 μa Peak Programming Current I PK During nonvolatile write only; digital inputs = V CC or GND 4 ma Standby Current I CC Digital inputs = V CC or GND, T A = +25 C μa TIMING CHARACTERISTICS (V CC = +2.7V to +5.25V, H = V CC, = GND, T A = -4 C to +85 C. Typical values are at V CC = +5.V, T A = +25 C, unless otherwise noted.) (See Figures 1, 2, 3, and 4). PARAMETER SYMBO CONDITIONS MIN TYP MAX UNITS ANAOG SECTION Wiper Settling Time t S (Note 7) 5 ns DIGITA SECTION UP or DN Pulse-Width High t PWH 8 ns UP or DN Pulse-Width ow t PW 8 ns UP or DN Glitch Immunity t IMMU 2 ns UP Fall to DN Rise Setup or DN Fall to UP Rise Setup t MS1 8 ns Before Entering NVM-Write Mode, UP Fall to UP Rise UP Rise to DN Rise Setup when Entering NVM-Write UP Fall to DN Fall Hold or DN Fall to UP Fall Hold during NVM- Write t MS2 8 ns t WS 8 ns t WH ns 3
4 μ TIMING CHARACTERISTICS (continued) (V CC = +2.7V to +5.25V, H = V CC, = GND, T A = -4 C to +85 C. Typical values are at V CC = +5.V, T A = +25 C, unless otherwise noted.) (See Figures 1, 2, 3, and 4). PARAMETER SYMBO CONDITIONS MIN TYP MAX UNITS NVM-Write Mode Pulse-Width High t WP 8 ns Write NV Register Busy Time t BUSY 14 ms Power-Up Settling Time t ACC (Note 8) 2 μs Note 1: All devices are production tested at T A = +25 C and are guaranteed by design for T A = -4 C to +85 C. Note 2: The DN and IN are measured with the potentiometer configured as a voltage-divider with H = V CC and = GND. The wiper terminal is unloaded and measured with a high input-impedance voltmeter. Note 3: The DN and IN are measured with the potentiometer configured as a variable resistor. H is unconnected and = GND. For the +5V condition, the wiper terminal is driven with a source current of 2μA and for the +2.7V condition, the wiper terminal is driven with a source current of 1μA. Note 4: The wiper resistance is measured using the source currents given in Note 3. Note 5: The device draws higher supply current when the digital inputs are driven with voltages between (V CC -.5V) and (GND +.5V). See Supply Current vs. Digital Input Voltage in the Typical Operating Characteristics. Note 6: Wiper at midscale with a 1pF load, = GND, an AC source is applied to H, and the output is measured as 3dB lower than the DC W/H value in db. Note 7: Wiper-settling time is the worst-case to 5% rise time measured between consecutive wiper positions. H = V CC, = GND, and the wiper terminal is unloaded and measured with a 1pF oscilloscope probe. See the Tap-to-Tap Switching Transient in the Typical Operating Characteristics section. Note 8: Power-up settling time is measured from the time V CC = 2.7V to the wiper settling to 1 SB of the final value. 4
5 μ (V CC = +5.V, T A = +25 C, unless otherwise noted.) INTEGRA NONINEARITY vs. (VOTAGE-DIVIDER) V CC = 2.7V, T A = -4 C MAX5128 toc INTEGRA NONINEARITY vs. (VOTAGE-DIVIDER) V CC = 2.7V, T A = +25 C MAX5128 toc INTEGRA NONINEARITY vs. (VOTAGE-DIVIDER) V CC = 2.7V, T A = +85 C MAX5128 toc IN (SB).4.2 IN (SB).4.2 IN (SB) DIFFERENTIA NONINEARITY vs. (VOTAGE-DIVIDER) V CC = 2.7V, T A = -4 C MAX5128 toc DIFFERENTIA NONINEARITY vs. (VOTAGE-DIVIDER) V CC = 2.7V, T A = +25 C MAX5128 toc DIFFERENTIA NONINEARITY vs. (VOTAGE-DIVIDER) V CC = 2.7V, T A = +85 C MAX5128 toc DN (SB) DN (SB) DN (SB) INTEGRA NONINEARITY vs. (VARIABE RESISTOR) V CC = 2.7V, T A = -4 C MAX5128 toc INTEGRA NONINEARITY vs. (VARIABE RESISTOR) V CC = 2.7V, T A = +25 C MAX5128 toc INTEGRA NONINEARITY vs. (VARIABE RESISTOR) V CC = 2.7V, T A = +85 C MAX5128 toc IN (SB) IN (SB) IN (SB)
6 μ (V CC = +5.V, T A = +25 C, unless otherwise noted.) DN (SB) DIFFERENTIA NONINEARITY vs. (VARIABE RESISTOR) V CC = 2.7V, T A = -4 C MAX5128 toc1 DN (SB) DIFFERENTIA NONINEARITY vs. (VARIABE RESISTOR) V CC = 2.7V, T A = +25 C MAX5128 toc11 DN (SB) DIFFERENTIA NONINEARITY vs. (VARIABE RESISTOR) V CC = 2.7V, T A = +85 C MAX5128 toc12 RATIOMETRIC TEMPCO (ppm/ C) RATIOMETRIC TEMPERATURE COEFFICIENT vs. (VOTAGE-DIVIDER) V CC = 2.7V T A = -4 C TO +85 C MAX5128 toc13 TCVR (ppm/ C) TEMPERATURE COEFFICIENT vs. (VARIABE RESISTOR) T A = -4 C TO +85 C V CC = 2.7V MAX5128 toc14 END-TO-END RESISTANCE CHANGE (%) END-TO-END RESISTANCE (R H ) % CHANGE vs. TEMPERATURE TEMPERATURE ( C) MAX5128 toc15 IDD (μa) STANDBY SUPPY CURRENT vs. TEMPERATURE V CC = 5.25V V CC = 2.7V V CC = 3.3V TEMPERATURE ( C) MAX5128 toc16 6
7 μ (V CC = +5.V, T A = +25 C, unless otherwise noted.) IDD (μa) SUPPY CURRENT vs. DIGITA INPUT VOTAGE V CC = 5V DIGITA INPUT VOTAGE (V) MAX5128 toc17 RW (Ω) WIPER RESISTANCE vs. TEMPERATURE V CC = 5V WIPER = MIDSCAE TEMPERATURE ( C) MAX5128 toc18 GAIN (db) WIPER RESPONSE vs. FREQUENCY V CC = 5V WIPER = MIDSCAE FREQUENCY (khz) MAX5128 toc THD+N vs. FREQUENCY V CC = 5V WIPER = MIDSCAE FITER BANDWIDTH = 8kHz MAX5128 toc2 TAP-TO-TAP SWITCHING TRANSIENT MAX5128 toc21 UP 2V/div THD+N (%) FREQUENCY (khz) 1μs/div H = V CC = GND FROM MIDSCAE C W = 2pF V W 2mV/div AC-COUPED 6 5 WIPER RESISTANCE vs. MAX5128 toc22 MIDSCAE WIPER TRANSIENT AT POWER-ON MAX5128 toc23 V CC 2V/div 4 RW (Ω) OUTPUT W 2V/div μs/div 7
8 μ 1 V CC μ μ 2 H 3 W 4 5 GND 6 DN 7 UP 8 N.C. t PWH tpw t MS1 NVM WRITE UP t PW t PWH t WP DN t MS1 t WS t WH Ω μ 8
9 μ UP NVM t PWH t PW t MS2 WRITE t BUSY t WP DN t WS t WH t BUSY t BUSY UP DN WIPER INCREMENTS WIPER DECREMENTS NVM WRITE NVM WRITE WIPER INCREMENTS WIPER DECREMENTS 9
10 μ UP t IMMU t IMMU DN t IMMU t IMMU PUSES WITH WIDTHS ESS THAN t IMMU ARE IGNORED. μ μ μ μ Ω Ω PROCESS: BiCMOS 1
11 μ TIMING-CONTRO-IC OUTPUT SIGNA 1kΩ 15kΩ +5V.1μF W +3.3V 12kΩ H 22kΩ MAX5128 MAX4238 V COM +3.3V 51kΩ 27kΩ 36kΩ.1μF V OUT = 2V TO 5.25V X OUT H V IN =.8V TO V OUT MAX1722 BATT GND FB W MAX
12 μ SW X V OUT = V CC TO 28V MAX8574 H V CC = 2.7V TO 5.5V V CC FB W MAX5128 SHDN GND CN CP TOP VIEW N.C. UP DN GND V IN = 2.7V TO 5.5V IN OUT H MAX1574 ED1 MAX5128 MAX5128 W SET ED GND ED3 V CC H W 2mm x 2mm μdfn 12
13 μ ( ) D XXXX XXXX XXXX E A e b N SODER MASK COVERAGE PIN 1.1x45 6, 8, 1 UDFN.EPS 1 PIN 1 INDEX AREA SAMPE MARKING 7 A A (N/2-1) x e) 1 C C A b A2 e e A1 EVEN TERMINA ODD TERMINA PACKAGE OUTINE, 6, 8, 1 udfn, 2x2x.8 mm -DRAWING NOT TO SCAE A
14 μ ( ) COMMON DIMENSIONS SYMBO MIN. NOM. MAX. A A A D E REF. PACKAGE VARIATIONS PKG. N e b BSC.3± BSC.4 BSC.25±.5.2±.3 (N/2-1) x e 1.3 REF. 1.5 REF. 1.6 REF. PACKAGE OUTINE, 6, 8, 1 udfn, 2x2x.8 mm -DRAWING NOT TO SCAE A Maxim Integrated Products, 12 San Gabriel Drive, Sunnyvale, CA Maxim Integrated Products
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MM74C150 MM82C19 16-Line to 1-Line Multiplexer 3-STATE 16-Line to 1-Line Multiplexer
MM74C150 MM82C19 16-Line to 1-Line Multiplexer 3-STATE 16-Line to 1-Line Multiplexer General Description The MM74C150 and MM82C19 multiplex 16 digital lines to 1 output. A 4-bit address code determines
NTE74HC299 Integrated Circuit TTL High Speed CMOS, 8 Bit Universal Shift Register with 3 State Output
NTE74HC299 Integrated Circuit TTL High Speed CMOS, 8 Bit Universal Shift Register with 3 State Output Description: The NTE74HC299 is an 8 bit shift/storage register with three state bus interface capability
MAX4636EUB -40 C to +85 C 10 µmax 1 NO1 IN1 GND. 3 x 3 THIN QFN OFF ON ON OFF SWITCHES SHOWN FOR "0" INPUT. Maxim Integrated Products 1
9-79; Rev ; /3 Fast, Low-Voltage, Dual 4 SPDT General Description The are fast, dual 4 singlepole/double-throw (SPDT) analog switches that operate with supply voltages from +.8V to +.V. High switching
Low Drift, Low Power Instrumentation Amplifier AD621
a FEATURES EASY TO USE Pin-Strappable Gains of 0 and 00 All Errors Specified for Total System Performance Higher Performance than Discrete In Amp Designs Available in -Lead DIP and SOIC Low Power,.3 ma
INTEGRATED CIRCUITS. 74LV688 8-bit magnitude comparator. Product specification Supersedes data of 1997 May 15 IC24 Data Handbook.
INTEGRATED CIRCUITS Supersedes data of 1997 May 15 IC24 Data Handbook 1998 Jun 23 FEATURES Wide operating voltage: 1.0 to 5.5V Optimized for low voltage applications: 1.0V to 3.6V Accepts TTL input levels
Precision, 8-Channel/Dual 4-Channel, High-Performance, CMOS Analog Multiplexers
9-027; Rev 2; 8/02 Precision, 8-Channel/Dual 4-Channel, General Description The / precision, monolithic, CMOS analog multiplexers (muxes) offer low on-resistance (less than 0Ω), which is matched to within
Compact, Dual-Output Charge Pump
9-7; Rev ; 7/97 Compact, Dual-Output Charge Pump General Description The is a CMOS charge-pump DC-DC converter in an ultra-small µmax package. It produces positive and negative outputs from a single positive
3.3 V 256 K 16 CMOS SRAM
August 2004 AS7C34098A 3.3 V 256 K 16 CMOS SRAM Features Pin compatible with AS7C34098 Industrial and commercial temperature Organization: 262,144 words 16 bits Center power and ground pins High speed
with Manual Reset and Watchdog Timer
General Description The MAX6821 MAX6825 are low-voltage microprocessor (µp) supervisory circuits that combine voltage monitoring, watchdog timer, and manual reset input functions in a 5-pin SOT23 package.
RT9403. I 2 C Programmable High Precision Reference Voltage Generator. Features. General Description. Ordering Information.
I 2 C Programmable High Precision Reference Voltage Generator General Description The RT9403 is a high precision reference voltage generating console consisting of three I 2 C programmable DACs. Each DAC
with Current-Limiting Switch
General Description The MAX4834/MAX4835 family of low-dropout (LDO) linear regulators feature an accurate current-limiting switch with an integrated FLAG or RESET function. These devices operate from 2.5V
NTE74HC173 Integrated Circuit TTL High Speed CMOS, 4 Bit D Type Flip Flop with 3 State Outputs
NTE74HC173 Integrated Circuit TTL High Speed CMOS, 4 Bit D Type Flip Flop with 3 State Outputs Description: The NTE74HC173 is an high speed 3 State Quad D Type Flip Flop in a 16 Lead DIP type package that
PART TOP VIEW. Maxim Integrated Products 1
9-96; Rev ; 2/ 45, SPDT Analog Switch in SOT23-8 General Description The is a dual-supply, single-pole/doublethrow (SPDT) analog switch. On-resistance is 45 max and flat (7 max) over the specified signal
I2 C Compatible Digital Potentiometers AD5241/AD5242
a Preliminary Technical ata FEATURES Position Potentiometer Replacement 0K, 00K, M, Ohm Internal Power ON Mid-Scale Preset +. to +.V Single-Supply; ±.V ual-supply Operation I C Compatible Interface APPLICATIONS
NV Electronically Programmable Capacitor
Small Packages MSOP Flipchip NV Electronically Programmable Capacitor FEATURES Non-volatile EEPROM storage of programmed trim codes Power On Recall of capacitance setting High-Performance Electronically
INTEGRATED CIRCUITS. 74LV00 Quad 2-input NAND gate. Product specification Supersedes data of 1998 Apr 13 IC24 Data Handbook.
INTEGRATED CIRCUITS Supersedes data of 1998 Apr 13 IC24 Data Handbook 1998 Apr 20 FEATURES Wide operating voltage: 1.0 to 5.5 V Optimized for low voltage applications: 1.0 to 3.6 V Accepts TTL input levels
SC70/µDFN, Single/Dual Low-Voltage, Low-Power µp Reset Circuits
9-839; Rev 5; 7/2 SC70/µDFN, Single/Dual Low-oltage, General Description The microprocessor (µp) supervisory circuits monitor power-supply voltages from +.8 to +5.0 while consuming only 3µA of supply current
NTE74HC109 Integrated Circuit TTL High Speed CMOS, Dual J K Positive Edge Triggered Flip Flop w/set & Reset
NTE74HC109 Integrated Circuit TTL High Speed CMOS, Dual J K Positive Edge Triggered Flip Flop w/set & Reset Description: The NTE74HC109 is a dual J K flip flip with set and reset in a 16 Lead plastic DIP
SGM48000/1/2 High Speed, Dual Power MOSFET Drivers
SGM000// GENERAL DESCRIPTION The SGM000// ICs are matched dual-drivers. Unique circuit design provides very high speed drivers capable of delivering peak currents of A into highly capacitive loads. Improved
MAX6325/MAX6341/MAX6350
VILLE 19-123; Rev 1; 1/1 Pin onfiguration 8V TO 36V INPUT TOP VIEW 2.2µF * NR IN TRI REFERENE 2.2µF * I.. IN NR 1 2 3 4 DIP/SO 8 7 6 5 I.. I.. TRI *OPTIONL I.. = INTERNLLY ONNETED; DO NOT USE For pricing,
Dual High-Speed 1.5A MOSFET Drivers
19-132; Rev 2; 6/6 Dual High-Speed 1.A MOSFET Drivers General Description The are dual monolithic MOSFET drivers designed to tralate TTL/CMOS inputs to high voltage/current outputs. The MAX4426 is a dual
74LVC574A Octal D-type flip-flop with 5-volt tolerant inputs/outputs; positive edge-trigger (3-State)
INTEGRATED CIRCUITS inputs/outputs; positive edge-trigger (3-State) 1998 Jul 29 FEATURES 5-volt tolerant inputs/outputs, for interfacing with 5-volt logic Supply voltage range of 2.7 to 3.6 Complies with
SC70/µDFN, Single/Dual Low-Voltage, Low-Power µp Reset Circuits
19-1839; Rev 4; 4/07 SC70/µDFN, Single/Dual Low-Voltage, Low-Power µp Reset Circuits General Description The MAX6381 MAX6390 microprocessor (µp) supervisory circuits monitor power-supply voltages from
74LV74 Dual D-type flip-flop with set and reset; positive-edge trigger
INTEGRATED IRUITS positive-edge trigger Supersedes data of 1996 Nov 07 I24 Data andbook 1998 Apr 20 FEATURES Wide operating voltage: 1.0 to 5.5V Optimized for ow Voltage applications: 1.0 to 3.6V Accepts
5 V 64K X 16 CMOS SRAM
September 2006 A 5 V 64K X 16 CMOS SRAM AS7C1026C Features Industrial (-40 o to 85 o C) temperature Organization: 65,536 words 16 bits Center power and ground pins for low noise High speed - 15 ns address
9A HIGH-SPEED MOSFET DRIVERS
9A HIGH-SPEED MOSFET DRIVERS 9A HIGH-SPEED MOSFET DRIVERS FEATURES Tough CMOS Construction High Peak Output Current.................. 9A High Continuous Output Current........ 2A Max Fast Rise and Fall
5.0 V 256 K 16 CMOS SRAM
February 2006 5.0 V 256 K 16 CMOS SRAM Features Pin compatible with AS7C4098 Industrial and commercial temperature Organization: 262,144 words 16 bits Center power and ground pins High speed - 10/12/15/20
35Ω, Low-Voltage, SPST/SPDT Analog Switches in UCSP Package
19-1994; Rev 3; 2/3 35, Low-Voltage, SPST/SPDT General Description The low on-resistance (R ON ), low-voltage analog switches operate from a single +2.V to +5.5V supply. The / are single-pole/single-throw
INTEGRATED CIRCUITS. 74LV273 Octal D-type flip-flop with reset; positive-edge trigger. Product specification 1997 Apr 07 IC24 Data Handbook
INTEGRATED CIRCUITS Octal D-type flip-flop with reset; positive-edge trigger 1997 Apr 07 IC24 Data Handbook FEATURES Wide operating voltage: 1.0 to 5.5V Optimized for Low Voltage applications: 1.0 to 3.6V
MAX701 N.C. GND DIP/SO
9-90; Rev ; /0 Power-Supply Monitor with Reset General Description The MAX00/MAX0/MAX0 are supervisory circuits used to monitor the power supplies in microprocessor (µp) and digital systems. The / outputs
MAX4638/MAX Ω, Single 8:1 and Dual 4:1, Low-Voltage Analog Multiplexers
General Description The / are single : and dual : CMOS analog multiplexers/demultiplexers (muxes/ demuxes). Each mux operates from a single +.V to +V supply or dual ±.V supplies. These devices feature.ω
Dual Ultra-Low-Voltage SOT23 µp Supervisors with Manual Reset and Watchdog Timer
Dual Ultra-Low-oltage SOT23 µp Supervisors with General Description The 6826 6831 are ultra-low-voltage microprocessor (µp) supervisory circuits designed to monitor two power supplies and have manual reset
CMOS HIGHSPEED 8-BIT A/D CONVERTER WITH TRACK AND HOLD. Case Outline(s). The case outlines shall be designated in Mil-Std-1835 and as follows:
SCOPE: CMOS HIGHSPEED 8-BIT A/D CONVERTER WITH TRACK AND HOLD Device Type Generic Number 01 MX7824T(x)/883B 02 MX7824U(x)/883B Case Outline(s). The case outlines shall be designated in Mil-Std-1835 and
HN58C66 Series word 8-bit CMOS Electrically Erasable and Programmable CMOS ROM. ADE F (Z) Rev. 6.0 Apr. 12, Description.
8192-word 8-bit CMOS Electrically Erasable and Programmable CMOS ROM ADE-203-375F (Z) Rev. 6.0 Apr. 12, 1995 Description The Hitachi HN58C66 is a electrically erasable and programmable ROM organized as
3.3 V 64K X 16 CMOS SRAM
September 2006 Advance Information AS7C31026C 3.3 V 64K X 16 CMOS SRAM Features Industrial (-40 o to 85 o C) temperature Organization: 65,536 words 16 bits Center power and ground pins for low noise High
1μA Ultra-Tiny Shunt Voltage Reference
EVALUATION KIT AVAILABLE MAX6069 General Description The MAX6069 ultra-low-power shunt references are ideal for space-critical and low-power applications. They are offered in a 4-bump wafer-level package
Distributed by: www.jameco.com 1-800-831-4242 The content and copyrights of the attached material are the property of its owner. September 2001 S7C256 5V/3.3V 32K X 8 CMOS SRM (Common I/O) Features S7C256
3-Pin, Low-Power μp Reset Circuits MAX6800/MAX6801/ MAX6802. Benefits and Features. General Description. Typical Operating Circuit.
General Description The MAX6800/MAX6801/ microprocessor (μp) supervisory circuits monitor the power supplies in 2.85 to 5.0 μp and digital systems. They increase circuit reliability and reduce cost by
INTEGRATED CIRCUITS. 74LV259 8-bit addressable latch. Product specification Supersedes data of 1997 Jun 06 IC24 Data Handbook.
INTEGRATED CIRCUITS Supersedes data of 1997 Jun 06 IC24 Data Handbook 1998 May 20 FEATURES Optimized for low voltage applicatio: 1.0 to 3.6 V Accepts TTL input levels between = 2.7 V and = 3.6 V Typical
NTE74HC165 Integrated Circuit TTL High Speed CMOS, 8 Bit Parallel In/Serial Out Shift Register
NTE74HC165 Integrated Circuit TTL High Speed CMOS, 8 Bit Parallel In/Serial Out Shift Register Description: The NTE74HC165 is an 8 bit parallel in/serial out shift register in a 16 Lead DIP type package
DP Tap Digital Potentiometer (DP)
00-Tap Digital Potentiometer () Description The is a single digital potentiometer() designed as an electronic replacement for mechanical potentiometers. Ideal adjustments on high volume production lines,
DS1225Y. 64K Nonvolatile SRAM FEATURES PIN ASSIGNMENT
DS1225Y 64K Nonvolatile SRAM FEATURES years minimum data retention in the absence of external power PIN ASSIGNMENT NC 1 28 VCC Data is automatically protected during power loss Directly replaces 8K x 8
HIGH SPEED TRANSISTOR OPTOCOUPLERS
SINGLECHANNEL: PACKAGE SCHEMATIC N/C V CC + V CC V F + V F 7 V B _ 7 V 0 _ V O _ V 0 V F N/C 4 5 GND + 4 5 GND,,, Pin 7 is not connected in Part Number / DESCRIPTION The /, / and / optocouplers consist
DP7111 DEVICE MARKING INFORMATION
00-Tap Digital Potentiometer () with Buffered Wiper Description The is a single digital potentiometer () designed as an electronic replacement for mechanical potentiometers. Ideal for automated adjustments
MAX TEMPCO. INITIAL ERROR (ppm/ C) Plastic DIP 8 CERDIP 8 Plastic DIP 0 C to +70 C Plastic DIP 8 SO REF01CZ 0 C to +70 C 65 ±100
19-0887; Rev 1; 8/99 General Description The REF01 and REF02 are precision voltage references that are pretrimmed to within ±3% of +10V and +5V, respectively. Both references feature excellent temperature
MC74VHC1G125. Noninverting 3 State Buffer
MC74CG2 Noninverting 3 State Buffer The MC74CG2 is an advanced high speed CMOS noninverting 3 state buffer fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent