FDY300NZ Single N-Channel 2.5V Specified PowerTrench MOSFET

Transcription

1 FDY3NZ Single N-Channel 2.5V Specified PowerTrench MOSFET General Description This Single N-Channel MOSFET has been designed using Fairchild Semiconductor s advanced Power Trench process to optimize the R V GS = 2.5v. Applications Li-Ion Battery Pack D Absolute Maximum Ratings Features TA=25 o C unless otherwise noted January 27 6 ma, 2 V R DS(ON) = 7 V GS = 4.5 V ESD protection diode (note 3) RoHS Compliant R DS(ON) = 85 V GS = 2.5 V Symbol Parameter Ratings Unit s V DSS Drain-Source Voltage 2 V V GSS Gate-Source Voltage ± 2 V I D Drain Current Continuous (Note a) a) 6 ma Pulsed P D Power Dissipation (Steady State) (Note a) a) 625 mw T J, T STG S G Operating and Storage Junction Temperature Range G S (Note b) January to +5 C 3 D tm Thermal Characteristics R θja Thermal Resistance, Junction-to-Ambient (Note a) a) 2 C/W R θja Thermal Resistance, Junction-to-Ambient (Note b) 28 Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity C FDY3NZ 7 8 mm 3 units 27 Fairchild Semiconductor Corporation

2 Electrical Characteristics T A = 25 C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BV DSS Drain Source Breakdown Voltage V GS = V, I D = 25 µa 2 V BVDSS T J Breakdown Voltage Temperature Coefficient I D = 25 µa, Referenced to 25 C 5 mv/ C I DSS Zero Gate Voltage Drain Current V DS = 6 V, V GS = V µa I GSS Gate Body Leakage, V GS = ± 2 V, V DS = V ± µa V GS = ± 4.5 V, V DS = V ± µa On Characteristics (Note 2) V GS(th) Gate Threshold Voltage V DS = V GS, I D = 25 µa.6..3 V V GS(th) T J Gate Threshold Voltage Temperature Coefficient I D = 25 µa, Referenced to 25 C 3 mv/ C R DS(on) Static Drain Source V GS = 4.5 V, I D = 6 ma.24.7 Ω On Resistance V GS = 2.5 V, I D = 5 ma V GS =.8 V, I D = 5 ma.7.25 V GS = 4.5 V, I D=6mA, T J = 25 C.35. g FS Forward Transconductance V DS = 5 V, I D = 6 ma.8 S Dynamic Characteristics C iss Input Capacitance V DS = V, V GS = V, 6 pf C oss Output Capacitance f =. MHz 2 pf C rss Reverse Transfer Capacitance pf Switching Characteristics (Note 2) t d(on) Turn On Delay Time V DD = V, I D = A, 6 2 ns t r Turn On Rise Time V GS = 4.5 V, R GEN = 6 Ω 8 6 ns t d(off) Turn Off Delay Time 8 6 ns t f Turn Off Fall Time ns Q g Total Gate Charge V DS = V, I D = 6 ma,.8. nc Q gs Gate Source Charge V GS = 4.5 V.6 nc Q gd Gate Drain Charge.26 nc Drain Source Diode Characteristics and Maximum Ratings V SD Drain Source Diode Forward V GS = V, I S = 5 ma (Note 2).7.2 V Voltage t rr Diode Reverse Recovery Time I F = 6 ma, 8 ns Diode Reverse Recovery Charge di F/dt = A/µs nc Q rr Notes:. R θja is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R θjc is guaranteed by design while R θca is determined by the user's board design. a) 2 C/W when mounted on a in 2 pad of 2 oz copper b) 28 C/W when mounted on a minimum pad of 2 oz copper Scale : on letter size paper 2. Pulse Test: Pulse Width < 3µs, Duty Cycle < 2.% 3. The diode connected between the gate and source serves only as protection againts ESD. No gate overvoltage rating is implied.

3 Typical Characteristics I D, DRAIN CURRENT (A) R DS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE V GS = 4.5V 3.V 3.5V 2.5V V DS, DRAIN-SOURCE VOLTAGE (V) 2.V Figure. On-Region Characteristics. I D = 6mA V GS = 4.5V T J, JUNCTION TEMPERATURE ( o C) Figure 3. On-Resistance Variation with Temperature. R DS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE R DS(ON), ON-RESISTANCE (OHM) V GS = 2.V 2.5V 3.V 3.5V I D, DRAIN CURRENT (A) 4.5V Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. T A = 25 o C T A = 25 o C V GS, GATE TO SOURCE VOLTAGE (V) I D = 3mA Figure 4. On-Resistance Variation with Gate-to-Source Voltage. I D, DRAIN CURRENT (A).5 V T A = -55 o 25 o DS = 5V C C.2 25 o C V GS, GATE TO SOURCE VOLTAGE (V) I S, REVERSE DRAIN CURRENT (A) V GS = V. T A = 25 o C. 25 o C -55 o C V SD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature.

4 Typical Characteristics I D, DRAIN CURRENT (A) V GS, GATE-SOURCE VOLTAGE (V) I D = 6mA V DS = 5V V Q g, GATE CHARGE (nc) 5V Figure 7. Gate Charge Characteristics.. R DS(ON) LIMIT V GS = 4.5V SINGLE PULSE R θja = 28 o C/W T A = 25 o C s DC ms ms s.. V DS, DRAIN-SOURCE VOLTAGE (V) ms Figure 9. Maximum Safe Operating Area. CAPACITANCE (pf) P(pk), PEAK TRANSIENT POWER (W) C oss C iss C rss V DS, DRAIN TO SOURCE VOLTAGE (V) f = MHz V GS = V Figure 8. Capacitance Characteristics..... t, TIME (sec) SINGLE PULSE R θja = 28 C/W T A = 25 C Figure. Single Pulse Maximum Power Dissipation. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE. D = SINGLE PULSE..... t, TIME (sec) RθJA(t) = r(t) * RθJA RθJA =28 C/W P(pk) t t 2 T J - T A = P * RθJA(t) Duty Cycle, D = t / t 2 Figure. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note b. Transient thermal response will change depending on the circuit board design.

5 Dimensional Outline and Pad Layout (.5) SEE DETAIL A LAND PATTERN RECOMMENDATION DETAIL A SCALE 2 : NOTES: UNLESS OTHERWISE SPECIFIED A) THIS PACKAGE CONFORMS TO EIAJ SC89 PACKAGING STANDARD. B) ALL DIMENSIONS ARE IN MILLIMETERS. C) DIMENSIONS ARE EXCLUSIVE OF BURRS, MOLD FLASH, AND TIE BAR EXTRUSIONS.

6 TRADEMARKS The following are registered and unregistered tradem ark s F airc hild S em ic onduc tor owns or is authoriz ed to use and is not intended to b e an ex haustiv e list of all suc h tradem ark s. A C Ex A c tiv ea rray B ottom less B uild it N ow C oolf ET CROSSVOLT D O M E Ec os P A R K E 2 C M O S EnS igna F A C T F A S T F A S Tr F P S F R F ET F A C T Q uiet S eries G lob alo p toisolator G TO H is ec I 2 C i-lo Im p liedd isc onnec t IntelliM A X IS O P L A N A R L ittlef ET M IC R O C O U P L ER M ic rof ET M ic rop ak M IC R O W IR E M S X M S X P ro A c ross the b oard. A round the world. The P ower F ranc hise P rogram m ab le A c tiv e D roop O C X O C X P ro O P TO L O G IC O P TO P L A N A R P A C M A N P O P P ower24 7 P oweredge P owers av er P owertrenc h Q F ET Q S Q T O p toelec tronic s Q uiet S eries R ap idc onfigure R ap idc onnec t µ S erd es S c alarp um p S IL EN T S W ITC H ER S M A R T S TA R T S P M S tealth S up erf ET S up ers O T -3 S up ers O T -6 S up ers O T -8 S y nc F ET TC M Tiny B oost Tiny B uc k Tiny P W M Tiny P ower Tiny L ogic TIN Y O P TO TruTranslation U H C U nif ET V C X W ire DISC L AIMER F A IR C H IL D S EM IC O N D U C TO R R ES ER V ES TH E R IG H T TO M A K E C H A N G ES W ITH O U T F U R TH ER N O TIC E TO A N Y P R O D U C TS H ER EIN TO IM P R O V E R EL IA B IL ITY, F U N C TIO N O R D ES IG N. F A IR C H IL D D O ES N O T A S S U M E A N Y L IA B IL ITY A R IS IN G O U T O F TH E A P P L IC A TIO N O R U S E O F A N Y P R O D U C T O R C IR C U IT D ES C R IB ED H ER EIN ; N EITH ER D O ES IT C O N V EY A N Y L IC EN S E U N D ER ITS P A TEN T R IG H TS, N O R TH E R IG H TS O F O TH ER S. TH ES E S P EC IF IC A TIO N S D O N O T EX P A N D TH E TER M S O F F A IR C H IL D S W O R L D W ID E TER M S A N D C O N D ITIO N S, S P EC IF IC A L L Y TH E W A R R A N TY TH ER EIN, W H IC H C O V ER S TH ES E P R O D U C TS. L IF E SU P P O RT P O L IC Y F A IR C H IL D S P R O D U C TS A R E N O T A U TH O R IZ ED F O R U S E A S C R ITIC A L C O M P O N EN TS IN L IF E S U P P O R T D EV IC ES O R S Y S TEM S W ITH O U T TH E EX P R ES S W R ITTEN A P P R O V A L O F F A IR C H IL D S EM IC O N D U C TO R C O R P O R A TIO N. A s used herein:. L ife sup p ort dev ic es or sy stem s are dev ic es or sy stem s whic h, (a) are intended for surgic al im p lant into the b ody, or (b ) sup p ort or sustain life, or (c ) whose failure to p erform when p rop erly used in ac c ordanc e with instruc tions for use p rov ided in the lab eling, c an b e reasonab ly ex p ec ted to result in signific ant injury to the user. 2. A c ritic al c om p onent is any c om p onent of a life sup p ort dev ic e or sy stem whose failure to p erform c an b e reasonab ly ex p ec ted to c ause the failure of the life sup p ort dev ic e or sy stem, or to affec t its safety or effec tiv eness. P RO DU C T STATU S DEF IN ITIO N S De fin itio n o f Te rm s Da ta s h e e t Id e n tific a tio n P ro d u c t Sta tu s De fin itio n A dv anc e Inform ation F orm ativ e or In D esign This datasheet c ontains the design sp ec ific ations for p roduc t dev elop m ent. S p ec ific ations m ay c hange in any m anner without notic e. P relim inary F irst P roduc tion This datasheet c ontains p relim inary data, and sup p lem entary data will b e p ub lished at a later date. F airc hild S em ic onduc tor reserv es the right to m ak e c hanges at any tim e without notic e in order to im p rov e design. N o Identific ation N eeded F ull P roduc tion This datasheet c ontains final sp ec ific ations. F airc hild S em ic onduc tor reserv es the right to m ak e c hanges at any tim e without notic e in order to im p rov e design. O b solete N ot In P roduc tion This datasheet c ontains sp ec ific ations on a p roduc t that has b een disc ontinued b y F airc hild sem ic onduc tor. The datasheet is p rinted for referenc e inform ation only. R ev. I22

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