Chalcogenide semiconductor research and applications. Tutorial 2: Thin film characterization. Rafael Jaramillo Massachusetts Institute of Technology
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1 Chalcogenide semiconductor research and applications Tutorial 2: Thin film characterization Rafael Jaramillo Massachusetts Institute of Technology
2 Section 1: Measuring composition August 20, 2017 Jaramillo - CSRA Cancun, Mexico 2
3 Semiconductor composition analysis Optoelectronic properties are determined by intrinsic and extrinsic defects at ppm (10-6 ) levels, and below Typical analysis techniques for thin films have precision of ~0.5%, and accuracy of ~10% (and much worse for oxides) What do we do? August 20, 2017 Jaramillo - CSRA Cancun, Mexico 3
4 Considering the options Electron-in, X-ray out Energy-dispersive spectroscopy (EDS) Typically available in electron microscopes Resolution & accuracy <5% Wavelength-dispersive spectroscopy (WDS) Require specialized electron microprobe systems Resolution & accuracy <1% Electron-in, electron-out Auger nanoprobe Resolution & accuracy <5% Excellent spatial resolution X-ray in, X-ray out X-ray fluorescence spectroscopy (XRF) Relatively low-cost, accessible Resolution & accuracy <5% (better with standards) X-ray in, electron out Always consider probe & X-ray photoelectron spectroscopy (XPS) escape depths! Resolution & accuracy <5% Highly surface-sensitive Ion-in, ion-out Rutheford backscattering (RBS) Resolution & accuracy <5% Uniquely sensitive to oxygen Secondary ion mass spectroscopy (SIMS) Resolution & accuracy <ppm Highly technical August 20, 2017 Jaramillo - CSRA Cancun, Mexico 4
5 Section 2: Measuring optical properties August 20, 2017 Jaramillo - CSRA Cancun, Mexico 5
6 Spectrophotometry 101 Measure transmission (T) and reflection (R) of a planar material stack Quantitative goals: Optical absorption coefficient (a) Band gap (E g ) Unknowns abound Reflection & transmission coefficients at each interface Indices of refraction Thicknesses Amplitude coefficients for film-onsubstrate r 01 t 01 r 12 t 12 t 20 t 10 r 10 r 20 t 21 August 20, 2017 Jaramillo - CSRA Cancun, Mexico 6
7 Simplifications and assumptions Simplification 1: Normal incidence Polarization doesn t matter Simplification 2: Substrate is non-existent T 10 = 1-R 10 Simplification 3: Film is fairly opaque All light absorbed by 2 nd pass through the film e -ad << 1, a >> 1/d R 01 T 01 R 10 = R 01 T 10 α = 1 d ln T 1 R 2 d August 20, 2017 Jaramillo - CSRA Cancun, Mexico 7
8 Simplifications and assumptions Simplification 4: Effective mass model, parabolic band edges, allowed vertical transitions Tauc equation (n = 1 for direct band gap) direct m e m h indirect allowed vertical transition α = A hν E g hν n 2 August 20, 2017 Jaramillo - CSRA Cancun, Mexico 8
9 Implications of the simplifications Evaluate assumptions to determine valid regime for Tauc analysis Simplification 3 a >> 1/d Typical film thickness = 1 mm a >> 10 4 cm -1 Simplification 4 Effective mass model E g < hn < E g mev (approximate) Absorption coefficients for select solar cell absorbers August 20, 2017 Jaramillo - CSRA Cancun, Mexico 9
10 Implications of the simplifications Need to discard a(hn) data before Tauc analysis Discard data at the low end that doesn t satisfy a >> 1/d Discard data at the high end that doesn t satisfy effective mass approximation Absorption coefficient measured on ZnO:Al film Tauc plot using reliable data August 20, 2017 Jaramillo - CSRA Cancun, Mexico 10
11 Section 3: Measuring electrical transport properties August 20, 2017 Jaramillo - CSRA Cancun, Mexico 11
12 Electrical transport 101 Drude model relates conductivity (s) to free carrier concentration (n) and drift mobility (m) Mobility is determined by generation and dissipation of momentum Carrier mass (m) determines velocity for given impulse Momentum relaxation time (t) characterizes randomization of carrier motion following given impulse Low-field current-voltage measurements with ohmic contacts and well-defined geometry determine s Hall magnetotransport measurements used to disentangle n and m Hall mobility drift mobility, but we will ignore this Drude model Typical Hall bar measurement geometry J = σe σ = qnμ μ = qττm August 20, 2017 Jaramillo - CSRA Cancun, Mexico 12
13 Details of Hall measurements Hall voltage (V H ) depends simply on carrier concentration (n) for single conduction band Realistic samples have lead placement error (e) that mixes Hall voltage (V H ) and longitudinal voltage (V L ) longitudinal current current leads V H = I xb z ntq normal to current perpendicular field thickness voltage leads V L = I x 1 σ ε wt = I x 1 qnμ ε wt current lines y z x sample width lead placement error (e) August 20, 2017 Jaramillo - CSRA Cancun, Mexico 13
14 Practical complications Signal (V H ) tends to vary slowly in time as magnetic field is swept Background (V L ) can vary slowly in time due to temperature drift, variable illumination, etc. Slowly varying signal and background Need large signal/background (V H /V L ) Signal/background: lead placement error (e) V H V L = Geometric factor x = e/w I x B z ntq I x 1 qnμ ε wt = B zμ Τ ε w width (w) August 20, 2017 Jaramillo - CSRA Cancun, Mexico 14
15 Practical limits of Hall measurements for lowmobility samples Lead placement error limits sensitivity of Hall measurements for low-mobility samples Typical van der Pauw sample, x ~ 0.1 Challenging to measure m < 10 cm 2 V - 1 s -1 Lithographicallydefined Hall bar, x < 0.01 Possible to measure m < 1 cm 2 V -1 s -1 August 20, 2017 Jaramillo - CSRA Cancun, Mexico 15
16 Practical limits of Hall measurements for high-conductivity samples High-conductivity samples encounter limitations due to small Hall voltage Depends on mobility and sample geometry Measuring small voltages (<1 mv) possible with lock-in measurements V H = I xb z ntq = V xb z μ w l sample aspect ratio August 20, 2017 Jaramillo - CSRA Cancun, Mexico 16
17 Section 4: Measuring minority carrier properties August 20, 2017 Jaramillo - CSRA Cancun, Mexico 18
18 Importance of minority carrier processes Doped semiconductors have majority and minority carrier types Most electronic transport measurements are insensitive to minority carriers Minority carrier processes are critically important for a range of semiconductor technologies Transistors Photodetectors Lighting Solar cells Photochemistry August 20, 2017 Jaramillo - CSRA Cancun, Mexico 19
19 Minority carrier transport in solar cells Superposition principle Illumination current + Diode forward current = Total current Good solar cell has Large illumination current Large diode turn-on voltage, good rectification Solar cells in a nutshell J (ma/cm 2 ) bad Volts good J (ma/cm 2 ) turn on Volts dark light August 20, 2017 Jaramillo - CSRA Cancun, Mexico 20 J ill
20 Illumination current Electron-hole pairs are generated (G) as the light is absorbed Each electron-hole pair has a probability P of being collected P is controlled by the diffusion length L diff L diff is controlled by lifetime t beware! Buffer (n-type) Absorber (p-type) e - h + J ill L diff G (cm -2 s -1 ) x (mm) x (mm) dxgp Dt P August 20, 2017 Jaramillo - CSRA Cancun, Mexico 21
21 Turn on voltage and V OC Diode equation Saturation current density J 0 Electron-hole recombination via: Light emission (a light emitting diode) Band-to-band tunneling Auger recombination Defect-assisted recombination (bulk) Defect-assisted recombination (interface) J 0 = J 0,1 + J 0,2 + Effect of recombination currents on V OC J dark V OC qv kt J 0 e 1 superposition kt J ill ln 1 q J 0 August 20, 2017 Jaramillo - CSRA Cancun, Mexico 22
22 Turn on voltage and V OC Diode equation Saturation current density J 0 Electron-hole recombination via: Light emission (a light emitting diode) Band-to-band tunneling Auger recombination Defect-assisted recombination (bulk) Defect-assisted recombination (interface) J 0 = J 0,1 + J 0,2 + R radiative Bpn B ~ cm 3 s -1 R Auger R defect C nnp nt h C ~ cm 6 s -1 np pt t ~ cm 3 s -1 J surface ns S ~ cm s -1 pnp e August 20, 2017 Jaramillo - CSRA Cancun, Mexico 23
23 Lifetime matters a lot Jaramillo et al., JAP 119, (2016) August 20, 2017 Jaramillo - CSRA Cancun, Mexico 24
24 Lifetime matters a lot Jaramillo et al., JAP 119, (2016) NO l YES August 20, 2017 Jaramillo - CSRA Cancun, Mexico 25
25 How to measure lifetime Generate minority carriers (typically using light) Measure material response, back out recombination rates through modeling Transient Photoluminescence Photoconductivity Steady state (or quasi steady state) Photoluminescence Photoconductivity August 20, 2017 Jaramillo - CSRA Cancun, Mexico 26
26 Challenges for metrology on thin films Want to measure Bulk lifetime (t) Surface recombination velocity (S) Useful to have Optical absorptivity (a), reflectivity (R) Equilibrium carrier concentration (p) Samples of varying thickness Near-total surface passivation Minority carrier diffusivity wafers thin films August 20, 2017 Jaramillo - CSRA Cancun, Mexico 27
27 Transient minority carrier generation Instantaneous optical attenuation (Beer- Lambert) leads to exponential excess carrier profile in a uniform material layer Excess carriers move through drift & diffusion until reaching symmetrical, half-sine wave profile Diffusion time t diff = d 2 /D D = diffusion constant d = thickness Evolution of excess carrier concentration through Si wafer following instantaneous illumination at t = 0 Luke and Cheng, JAP 61, 2282 (1987) August 20, 2017 Jaramillo - CSRA Cancun, Mexico 28
28 Does excess carrier profile matter? Case I: Diffusion time << recombination time Excess carriers reach symmetrical profile At long times, free carriers decay with effective lifetime t eff t eff is a function of both bulk and surface recombination Case II: Diffusion time >> recombination time Excess carriers don t reach symmetrical profile before recombining Carrier profile needs to be explicitly modeled to determine recombination rates August 20, 2017 Jaramillo - CSRA Cancun, Mexico 29
29 Solving for recombination rates in Case I Extract single exponential decay rate t eff -1 from long-time tail of experimental signal Measure samples with varying d and/or S to determine t by regression 1 τ eff 1 τ + d2 π 2 D + d 2S TRPL measurement of minority carrier recombination in CZTS thin film Barkhouse et al., Prog. Phot. Res. Appl. 20, 6 (2012) August 20, 2017 Jaramillo - CSRA Cancun, Mexico 30
30 Solving for recombination rates in Case II Fit data to drift-diffusion model of excess carrier transport Jaramillo et al., JAP 119, (2016) August 20, 2017 Jaramillo - CSRA Cancun, Mexico 31
31 The problem with unknown diffusivity D Diffusivity (D) and surfacerecombination velocity (S) are strongly correlated S = rate at which minority carriers are consumed at the surface D = rate at which minority carriers are transported to the interface Diffusion limited Surface-recombination limited August 20, 2017 Jaramillo - CSRA Cancun, Mexico 32
32 Other complications (not discussed here) Injection-dependence of bulk recombination Injection-dependence of surface recombination Ambipolar diffusivity and Dember effects t/t SRH recombination vs injection R n/p 0 defect np nt pt h e August 20, 2017 Jaramillo - CSRA Cancun, Mexico 33
33 Recombination rates & materials processing Bulk and surface minority carrier recombination in SnS thin films Jaramillo et al., JAP 119, (2016) August 20, 2017 Jaramillo - CSRA Cancun, Mexico 34
34 Concluding remarks: Thin film characterization Measuring composition is not easy, and may not be possible Straightforward optical property measurements need to be interpreted carefully Low-mobility semiconductors pose challenges for typical Hall measurements Minority carriers recombine by different processes; lifetime measurements are ambiguous and should consider the application and focus on the relevant mechanisms August 20, 2017 Jaramillo - CSRA Cancun, Mexico 35
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