Electronic Circuits. Bipolar Junction Transistors. Manar Mohaisen Office: F208 Department of EECE
|
|
- Leo Jacob Lewis
- 5 years ago
- Views:
Transcription
1 Electronic Circuits Bipolar Junction Transistors Manar Mohaisen Office: F208 Department of EECE
2 Review of Precedent Class Explain the Operation of the Zener Diode Explain Applications of the Zener Diode Explain the Operation and Applications of the Varactor Diode Explain the Operation and Applications of the Optical Diodes Other Types of Diodes
3 Class Objectives Bipolar Junction Transistor (BJT) BJT Characteristics and Parameters BJT as an Amplifier and as a Switch Phototransistor and its Applications Transistor Categories and Packaging Discussions
4 Bipolar Junction Transistor C (collector) C B (base) n p n Base-Collector junction Base-Emitter junction B p n p npn pnp E (emitter) E BJT Consists of three regions called emitter, base, and collector. The base region is thin and lightly doped. The emitter region is heavily doped wide region. The controller region is moderately doped wide region. Consists of two pn junctions Namely, base-emitter junction and base-controller junctions.
5 BJT Operation Base Current Electrons flow from the emitter to the base generating hole current. Electrons from the emitter recombine with the holes in the base. Since the base region is thin The number of holes is small. The number of electrons combining with the holes is also small. These valence electrons become free in the metallic base. This is called the base current. Bipolar Junction Transistor contd.
6 BJT Operation contd. Collector Current Base region is thin. most of the electrons entering the base don t combine with holes. The uncombined free electrons are attracted by the collector supply voltage. The uncombined free electrons move through the collector into the external circuit. Bipolar Junction Transistor contd.
7 Bipolar Junction Transistor contd. Transistor Currents + I C + I C I C I C + I B n p + I B I B p n I B n p I E I E I E + I E + (1) BJT currents (2) DC Beta I I = I + I β = C E B C DC I B (3) DC Alpha I α = C DC I E
8 BJT Characteristics and Parameters Transistor DC Model [Unsaturated BJT] Input circuit: forward-biased diode with a current of I B. Output circuit: a dependent current source of β DC I B.
9 BJT Circuit Analysis V BE = 0.7 V Forward-biased diode. Therefore, I B is given by: I C is given by: V CE is given by: V = V I R CE CC C C V CB is given by: BJT Characteristics and Parameters contd. V = V V R B BB BE I B I C V = = β BB V R DC B I B BE V = V V CB CE BE
10 Example 4-2 β DC = 150 Currents: Voltages: BJT Characteristics and Parameters contd. I I V V 5V 0.7V 430 μ A = BB BE = = B RB 10kΩ β = I = A = 64.5 ma C DC B I = I + I = E B C μ 64.9mA V = V I R = 10V (64.5mA)(100 Ω ) = 3.55V CE CC C C V V V = = 3.55V 0.7V = 2.85V CB CE BE
11 Collector Characteristic Curves Saturation region Both junctions are forwardbiased V CC = 0. I C is independent of I B. BJT Characteristics and Parameters contd. As V CC increases, I C and V CE increase. Ideally, when V CE exceeds 0.7, the base-collector junction becomes reverse-biased. The BJT goes into the linear region (active region). In linear region, I C is dependent on I B. I C B Saturation region Active region Breakdown region C I C = β DC I B A V V CE(max) V CE
12 BJT Characteristics and Parameters contd. Collector Characteristic Curves contd. I C At higher voltages of V CE The base-collector junction goes in breakdown. B Active region Breakdown region C The collector current increases rapidly. A transistor should never be operated in the breakdown region. Saturation region A V V CE(max) V CE
13 BJT Characteristics and Parameters contd. Cutoff This region of operation happens when I B = 0. There will be a very small collector leakage current I CEO. This I CEO is neglected and therefore V CE = V CC. Both junctions are reverse-biased.
14 Saturation BJT Characteristics and Parameters contd. As V BB increases, the base-emitter junction is forward-biased. The base current I B increases. The base current increases and the collector current increases as a result (I C = β DC I B ). As a result, V CE decreases till the saturation value V CE (sat) and the base -controller junction becomes forward-biased (V CE = V CC I C R C ). I C does not increase anymore even when I B increases. Saturation occurs below the knee of the collector curves A few tenths of a volt.
15 BJT Characteristics and Parameters contd. DC Load Line In between cutoff and saturation along the load line is the active region. Details will be covered in Chapter 5. I C I C(sat) Saturation I B = 0 Cutoff 0 V CE(sat) V CC V CE
16 BJT Characteristics and Parameters contd. Example 4-4 Determine whether or not the transistor is in saturation or not. V CE(sat) = 0.2 V. Solution If the transistor is in saturation, then I C(sat) V V CC C(sat) = = 10V 0.2V = 9.8mA R 1.0 kω B If the transistor is not in saturation, then V V I = BB BE = 2.3 V = B 0.23 ma RB 10kΩ I = β I = (50)(0.23mA) = 11.5 ma C DC B and Because I C can t be greater than I C(sat), the transistor is saturated.
17 BJT Characteristics and Parameters contd. More About β DC β DC is not really constant but rather varies with I C and the temperature. Usually we specify the minimum β DC in the transistor datasheet.
18 Maximum Transistor Rating BJT Characteristics and Parameters contd. Limitations (maximum ratings) are specified by the manufacturer for: Collector-to-base voltage Collector-to-emitter voltage Collector current Power dissipation Note that Collector-to-emitter voltage and collector current can t be maximum at the same time. If V CE is maximum, I C is given by: If I C is maximum, V CE is given by: I V C CE = = P V D(max) P CE D(max) I C
19 Example 4-5 Collector-to-emitter voltage = 6 V. Maximum power rating = 250 mw. Find the maximum collector current. BJT Characteristics and Parameters contd. Solution: I C PD(max) = = 250 mw = 41.7 ma V 6V CE
20 Example 4-6 P D(max) = 800 mw, V CE(max) = 15 V, and I C(max) = 100 ma. Determine the maximum value of V CC before exceeding the rating. Solution: BJT Characteristics and Parameters contd. I B V V 195 μa = BB BE = B RB IC = βdc I = (100)(195μA) = 19.5mA VR = I C CRC = (19.5mA)(1.0k Ω ) = 19.5 V I C is much less than the maximum collector maximum current. I C is dependent on I B, and will not change as long as I B is fixed. Therefore, V = V + V 15V 19.4 V 34.5 V CC(max) CE(max) R = + = Has the maximum power rating been exceeded? No. P = V I = = D C CE(max) C (15V)(19.5mA) 293 mw
21 BJT Characteristics and Parameters contd. Derating P D(max) P D(max) is usually specified at 25 o C. For higher temperatures, P D(max) is less. Derating is calculated using a derating factor. Example A derating factor of 2 mw/ o C This means that the maximum power dissipation is reduced 2 mw for each degree Celsius increase in temperature.
22 The BJT as an Amplifier Voltage Gain Defined as the ratio between output voltage and input voltage. Let us define r e as the resistance between base and emitter. Then, Vb Voltage gain Example: r e = 50 Ω R C = 1.0 k Ω V I R = I ' ere c e C A v V I R R = V I r r = c b e C ' e e C ' e A v R r C 1000 ' = = e
23 The BJT as a Switch Switch Condition in Cutoff V = V CE(cutoff) CC Conditions in Saturation V V CC CE(sat) I = C(sat) R C I B(min) = I β C(sat) DC +V CC +V CC +V CC +V CC R C I C = 0 R C R C I C(sat) R C I C(sat) 0 V R B I B = 0 C E +V BB R B I B + C E Cutoff open switch Saturation closed switch
24 The BJT as a Switch contd. Application of a Transistor Switch In cutoff diode is off. In saturation diode is on. Example The diode requires 30 ma to be on. Use double the minimum base current to ensure saturation. V CC = 9V, V CE(sat) = 0.3 V, R C = 220 Ω, R B = 3.3 kω. Determine the value of the square wave. V V V CC LED CE(sat) I = = 9V 1.6V 0.3V = C(sat) 32.3mA R 220Ω I B(min) DC C IC(sat) = = 32.3mA = 646 μ A β 50 V = 2 I R + V = (1.29mA)(3.3k Ω ) V = 4.96V in B(min) B BE
25 The Phototransistor Phototransistor The base current is produced when light strikes the sensing semiconductor base region. In absence of light, there will be a small leaking current I CEO. When the light strikes the collector-base pn junction A base current, I λ, is produced that is directly prop. with the light intensity. I = β I C DC λ +VCC Except for the base current generation, The phototransistor behaves as a conventional BJT. The base-collector region is wider than that in the case of the BJT. To produce greater current. Emitter n p n Base Collector Light R C V OUT
26 The Phototransistor contd. Three-lead phototransistor The base lead is electrically available where the phototransistor can be used as a BJT with or without light-sensitivity. Two-lead phototransistor The base lead is not electrically available. This is the usual configuration.
27 The Phototransistor contd. Collector Characteristics Curves Each curve corresponds to a certain value of light intensity. I C (ma) mw/cm 2 +V CC mw/cm 2 30 mw/cm 2 R C V OUT 4 20 mw/cm mw/cm 2 Dark current V CE (V) Phototransistors are not sensitive to all lights They are sensitive to wavelengths in the red and infrared bandwidths.
28 The Phototransistor contd. Applications Light activating. Light deactivating.
29 The Phototransistor contd. Optocouplers A device that has light-based connection. Types of Optocouplers LED-to-photodiode LED-to-phototransistor Current transfer ration Ration between change in input current (LED s) and that of the out current.
30 The Phototransistor contd. Applications of the Optocouplers Isolate sections of the circuit that are incompatible in terms of current or voltage. Ex.: Isolate low-current control or circuits from noisy power supplies or high current motors, etc. Ex.: Isolating patients from monitoring instruments. Ex.: Traffic lights where control circuit is isolated from the power circuit.
31 Transistor Categories and Packaging General-purpose / Small-signal Transistors Used for low- or medium-power amplifiers or switches. The packages are either metal or plastic. Certain types of packages contain multiple transistors. 2 Base 3 Collector Emitter Base 3 Collector 2 Emitter 2 Base 3 Collector 1 Emitter TO-92 SOT TO-18
32 Transistor Categories and Packaging contd. Power Transistors Used to handle large currents ( > 1 A) and/or large voltages. A power amplifier is used to drive the speakers. Usually it has a metal case for the collector Usually connected to a heat sink for heat dissipation.
33 RF Transistors Operate at extremely high-frequencies. Usually used in communication systems. Transistor Categories and Packaging contd.
34 Discussion & Notes K K A K A A A A K K K K A K A K K A K A K A
Electronic Circuits. Transistor Bias Circuits. Manar Mohaisen Office: F208 Department of EECE
lectronic ircuits Transistor Bias ircuits Manar Mohaisen Office: F208 mail: manar.subhi@kut.ac.kr Department of Review of the Precedent Lecture Bipolar Junction Transistor (BJT) BJT haracteristics and
More informationBipolar Junction Transistor (BJT) - Introduction
Bipolar Junction Transistor (BJT) - Introduction It was found in 1948 at the Bell Telephone Laboratories. It is a three terminal device and has three semiconductor regions. It can be used in signal amplification
More informationChapter 2 - DC Biasing - BJTs
Objectives Chapter 2 - DC Biasing - BJTs To Understand: Concept of Operating point and stability Analyzing Various biasing circuits and their comparison with respect to stability BJT A Review Invented
More informationElectronic Circuits 1. Transistor Devices. Contents BJT and FET Characteristics Operations. Prof. C.K. Tse: Transistor devices
Electronic Circuits 1 Transistor Devices Contents BJT and FET Characteristics Operations 1 What is a transistor? Three-terminal device whose voltage-current relationship is controlled by a third voltage
More informationChapter 2. - DC Biasing - BJTs
Chapter 2. - DC Biasing - BJTs Objectives To Understand : Concept of Operating point and stability Analyzing Various biasing circuits and their comparison with respect to stability BJT A Review Invented
More informationDC Biasing. Dr. U. Sezen & Dr. D. Gökçen (Hacettepe Uni.) ELE230 Electronics I 15-Mar / 59
Contents Three States of Operation BJT DC Analysis Fixed-Bias Circuit Emitter-Stabilized Bias Circuit Voltage Divider Bias Circuit DC Bias with Voltage Feedback Various Dierent Bias Circuits pnp Transistors
More informationJunction Bipolar Transistor. Characteristics Models Datasheet
Junction Bipolar Transistor Characteristics Models Datasheet Characteristics (1) The BJT is a threeterminal device, terminals are named emitter, base and collector. Small signals, applied to the base,
More informationBiasing BJTs CHAPTER OBJECTIVES 4.1 INTRODUCTION
4 DC Biasing BJTs CHAPTER OBJECTIVES Be able to determine the dc levels for the variety of important BJT configurations. Understand how to measure the important voltage levels of a BJT transistor configuration
More informationFigure 1 Basic epitaxial planar structure of NPN. Figure 2 The 3 regions of NPN (left) and PNP (right) type of transistors
Figure 1 Basic epitaxial planar structure of NPN Figure 2 The 3 regions of NPN (left) and PNP (right) type of transistors Lecture Notes: 2304154 Physics and Electronics Lecture 6 (2 nd Half), Year: 2007
More informationIntroduction to Transistors. Semiconductors Diodes Transistors
Introduction to Transistors Semiconductors Diodes Transistors 1 Semiconductors Typical semiconductors, like silicon and germanium, have four valence electrons which form atomic bonds with neighboring atoms
More informationGeneral Purpose Transistors
General Purpose Transistors NPN and PNP Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT 33/SC which is designed for low power surface mount
More informationMP6901 MP6901. High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching. Maximum Ratings (Ta = 25 C)
TOSHIBA Power Transistor Module Silicon Epitaxial Type (Darlington power transistor in ) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching. Industrial Applications
More informationKOM2751 Analog Electronics :: Dr. Muharrem Mercimek :: YTU - Control and Automation Dept. 1 4 DC BIASING BJTS (CONT D II )
KOM2751 Analog Electronics :: Dr. Muharrem Mercimek :: YTU - Control and Automation Dept. 1 4 DC BIASING BJTS (CONT D II ) Most of the content is from the textbook: Electronic devices and circuit theory,
More informationDevice Physics: The Bipolar Transistor
Monolithic Amplifier Circuits: Device Physics: The Bipolar Transistor Chapter 4 Jón Tómas Guðmundsson tumi@hi.is 2. Week Fall 2010 1 Introduction In analog design the transistors are not simply switches
More informationESE319 Introduction to Microelectronics. Output Stages
Output Stages Power amplifier classification Class A amplifier circuits Class A Power conversion efficiency Class B amplifier circuits Class B Power conversion efficiency Class AB amplifier circuits Class
More informationH21A1 / H21A2 / H21A3 PHOTOTRANSISTOR OPTICAL INTERRUPTER SWITCH
HA / HA / HA.07 (.85). (.8) NOTES: 0.9 (6.5) 0. (6.5) 0.5 (.) 0.9 (.0) PACKAGE DIMENSIONS.95 (7.5).7 (6.9) 0.97 (.7) 0.957 (.) 0.7 (.0) 0.57 (.6) D E 0.755 (9.) 0.75 (8.9) 0.9 (.) 0.9 (.0) Ø 0. (.) Ø 0.6
More informationChapter 1 Introduction to Electronics
Chapter Introduction to Electronics Section - Atomic Structure. An atom with an atomic number of 6 has 6 electrons and 6 protons.. The third shell of an atom can have n = (3) = 8 electrons. Section - Materials
More informationR. Ludwig and G. Bogdanov RF Circuit Design: Theory and Applications 2 nd edition. Figures for Chapter 6
R. Ludwig and G. Bogdanov RF Circuit Design: Theory and Applications 2 nd edition Figures for Chapter 6 Free electron Conduction band Hole W g W C Forbidden Band or Bandgap W V Electron energy Hole Valence
More informationfigure shows a pnp transistor biased to operate in the active mode
Lecture 10b EE-215 Electronic Devices and Circuits Asst Prof Muhammad Anis Chaudhary BJT: Device Structure and Physical Operation The pnp Transistor figure shows a pnp transistor biased to operate in the
More informationPHOTOTRANSISTOR OPTOCOUPLERS
DESCRIPTION The CNY7 series consists of a Gallium Arsenide IRED coupled with an NPN phototransistor. FEATURES CNY7-/2/3 are also available in white package by specifying -M suffix (eg. CNY7-2-M) UL recognized
More informationBiasing the CE Amplifier
Biasing the CE Amplifier Graphical approach: plot I C as a function of the DC base-emitter voltage (note: normally plot vs. base current, so we must return to Ebers-Moll): I C I S e V BE V th I S e V th
More information4N25/ 4N26/ 4N27/ 4N28. Optocoupler with Phototransistor Output. Vishay Telefunken. Description. Applications. Features.
Optocoupler with Phototransistor Output Description The 4N25/ 4N26/ 4N27/ 4N28 consist of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 6-lead plastic dual-inline
More informationGENERAL PURPOSE 6-PIN PHOTOTRANSISTOR OPTOCOUPLERS
TIL TIL-M TIL7-M MOC800-M WHITE PACKAGE (-M SUFFIX) SCHEMATIC 2 3 NC 5 4 PIN. ANODE 2. CATHODE 3. NO CONNECTION 4. EMITTER 5. COLLECTOR. BASE BLACK PACKAGE (NO -M SUFFIX) DESCRIPTION The MOC800, TIL and
More informationGENERAL PURPOSE 6-PIN PHOTOTRANSISTOR OPTOCOUPLERS
4N37 HA HA2 HA3 HA4 HA5 WHITE PACKAGE (-M SUFFIX) SCHEMATIC 2 3 NC PIN. ANODE 2. CATHODE 3. NO CONNECTION 4. EMITTER 5. COLLECTOR. BASE 5 4 BLACK PACKAGE (NO -M SUFFIX) DESCRIPTION The general purpose
More informationH11AV1-M H11AV1A-M H11AV2-M H11AV2A-M
PACKAGE OUTLINE SCHEMATIC 6 6 HAVS-M, HAV2S-M 6 HAV-M, HAV2-M 2 3 NC PIN. ANODE 2. CATHODE 3. NO CONNECTION 4. EMITTER 5. COLLECTOR 6. BASE 5 4 6 HAVA-M, HAV2A-M DESCRIPTION The general purpose optocouplers
More informationMOC8111 MOC8112 MOC8113
PACKAGE SCHEMATIC ANODE 6 N/C 6 6 CATHODE 2 5 COLLECTOR N/C 3 4 EMITTER 6 DESCRIPTION The MOC8X series consists of a Gallium Arsenide IRED coupled with an NPN phototransistor. The base of the transistor
More informationECE-342 Test 2 Solutions, Nov 4, :00-8:00pm, Closed Book (one page of notes allowed)
ECE-342 Test 2 Solutions, Nov 4, 2008 6:00-8:00pm, Closed Book (one page of notes allowed) Please use the following physical constants in your calculations: Boltzmann s Constant: Electron Charge: Free
More informationCHAPTER.4: Transistor at low frequencies
CHAPTER.4: Transistor at low frequencies Introduction Amplification in the AC domain BJT transistor modeling The re Transistor Model The Hybrid equivalent Model Introduction There are three models commonly
More informationPhototransistor. Industry Standard Single Channel 6 Pin DIP Optocoupler
Phototransistor Industry Standard Single Channel 6 Pin DIP Optocoupler DEVICE TYPES Part No. CTR % Min. Part No. CTR % Min. 4N25 2 MCT2 2 4N26 2 MCT2E 2 4N27 MCT27 5 4N28 MCT27 45 9 4N35 MCT272 75 5 4N36
More informationPHOTOTRANSISTOR OPTOCOUPLERS
MCT MCTE MCT0 MCT7 MCT00 MCT0 MCT0 WHITE PACKAGE (-M SUFFIX) BLACK PACKAGE (NO -M SUFFIX) DESCRIPTION The MCTXXX series optoisolators consist of a gallium arsenide infrared emitting diode driving a silicon
More informationPHOTODARLINGTON OPTOCOUPLERS
DESCRIPTION The CNX48U, HBX, and TIL3 have a gallium arsenide infrared emitter optically coupled to a silicon planar photodarlington. CNX48U HB HB2 HB255 HB3 TIL3 FEATURES High sensitivity to low input
More information(e V BC/V T. α F I SE = α R I SC = I S (3)
Experiment #8 BJT witching Characteristics Introduction pring 2015 Be sure to print a copy of Experiment #8 and bring it with you to lab. There will not be any experiment copies available in the lab. Also
More informationForward-Active Terminal Currents
Forward-Active Terminal Currents Collector current: (electron diffusion current density) x (emitter area) diff J n AE qd n n po A E V E V th ------------------------------ e W (why minus sign? is by def.
More informationHomework Assignment 08
Homework Assignment 08 Question 1 (Short Takes) Two points each unless otherwise indicated. 1. Give one phrase/sentence that describes the primary advantage of an active load. Answer: Large effective resistance
More informationChapter 9 Bipolar Junction Transistor
hapter 9 ipolar Junction Transistor hapter 9 - JT ipolar Junction Transistor JT haracteristics NPN, PNP JT D iasing ollector haracteristic and Load Line ipolar Junction Transistor (JT) JT is a three-terminal
More informationHi-Reliability Optically Coupled Isolator
HiReliability Optically Coupled Isolator Features: TO78 hermetically sealed package High current transfer ratio 1 k electrical isolation Base contact provided for conventional transistor biasing TX and
More informationAC INPUT/PHOTOTRANSISTOR OPTOCOUPLERS
HAA HAA3 HAA2 HAA4 DESCRIPTION The HAAX series consists of two gallium-arsenide infrared emitting diodes connected in inverse parallel driving a single silicon phototransistor output. FEATURES Bi-polar
More informationPHOTODARLINGTON OPTICAL INTERRUPTER SWITCH
HB HB HB3 PACKAGE DIMENSIONS 0.7 (.0) 0.57 (.6) C L 0.9 (6.35) 0.3 (6.5) D E C L 0.39 (.00) 0.3 (0.85).33 (3.38).073 (.85) 0.9 (3.3) 0.9 (3.0) 0.33 (.0) 0. (0.7) Optical C L 0.5 (3.) 0.9 (3.0).35 (8.00).95
More informationabsolute maximum ratings at 25 C case temperature (unless otherwise noted)
,, B, C, D Designed for Complementary Use with BDW84, BDW84A, BDW84B, BDW84C and BDW84D W at C Case Temperature A Continuous Collector Current Minimum h FE of 70 at 3, 6 A B C E SOT-93 PACKAGE (TOP IEW)
More informationOP550, OP552, OP555, OP560, OP565, OP750 Series
OP552 Features: Wide receiving angle Four sensitivity ranges Sidelooking package Ideal for spacelimited applications Ideal for PCBoard mounting Choice of clear, opaque or bluetinted package OP550 OP5 OP750
More informationMOC205-M MOC206-M MOC207-M MOC208-M
DESCRIPTION These devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector, in a surface mountable, small outline, plastic package.
More information4N35/ 4N36/ 4N37. Optocoupler with Phototransistor Output. Vishay Telefunken. Description. Applications. Features.
Optocoupler with Phototransistor Output Description The 4N35/ 4N36/ 4N37 consist of a phototransistor optically coupled to a gallium arsenide infraredemitting diode in a 6-lead plastic dual inline package.
More informationT C MEASURED POINT G1 E1 E2 G2 W - (4 PLACES) G2 E2 E1 G1
CMDU-3KA Powerex, Inc., Hillis Street, Youngwood, Pennsylvania 15697-1 (7) 95-77 Dual IGBTMOD KA-Series Module Amperes/17 Volts B F A G T C MEASURED POINT M C L T - ( TYP.) N R Z CE1 E C1 C E AA S - (3
More informationELECTRONICS IA 2017 SCHEME
ELECTRONICS IA 2017 SCHEME CONTENTS 1 [ 5 marks ]...4 2...5 a. [ 2 marks ]...5 b. [ 2 marks ]...5 c. [ 5 marks ]...5 d. [ 2 marks ]...5 3...6 a. [ 3 marks ]...6 b. [ 3 marks ]...6 4 [ 7 marks ]...7 5...8
More information4-PIN PHOTOTRANSISTOR OPTOCOUPLERS
PACKAGE HAA84 SCHEMATIC 4 COLLECTOR 4 2 3 EMITTER DESCRIPTION The HAA84 Series consists of two gallium arsenide infrared emitting diodes, connected in inverse parallel, driving a single silicon phototransistor
More informationMultichannel Optocoupler with Phototransistor Output
CNY74 2H/ CNY74 4H Multichannel Optocoupler with Phototransistor Output Description The CNY74-2H and CNY74-4H consist of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode
More informationOptocoupler, Phototransistor Output, no Base Connection
Optocoupler, Phototransistor Output, no Base Connection FEATURES A C NC 1 2 3 6 5 4 NC C E Isolation test voltage, 5 V RMS No base terminal connection for improved common mode interface immunity Long term
More informationDATA SHEET. BC556; BC557 PNP general purpose transistors DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 1997 Mar 27.
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 Supersedes data of 1997 Mar 27 FEATURES Low current (max. 100 ma) Low voltage (max. 65 V). APPLICATIONS General purpose switching and amplification.
More informationUniversity of Pittsburgh
University of Pittsburgh Experiment #8 Lab Report The Bipolar Junction Transistor: Characteristics and Models Submission Date: 11/6/2017 Instructors: Dr. Minhee Yun John Erickson Yanhao Du Submitted By:
More information55:041 Electronic Circuits The University of Iowa Fall Exam 2
Exam 2 Name: Score /60 Question 1 One point unless indicated otherwise. 1. An engineer measures the (step response) rise time of an amplifier as t r = 0.35 μs. Estimate the 3 db bandwidth of the amplifier.
More informationType Marking Pin Configuration Package BSP60 BSP61 BSP62 2=C 2=C 2=C 3=E 3=E 3=E
BSP6 PNP Silicon Darlington Transistor High collector current Low collectoremitter saturation voltage Complementary types: BSP0...BSP (NPN) 1 Pbfree (RoHS compliant) package 1) Qualified according AEC
More informationExperiment Determining the beta where it is stable.(6) Analysis and design of dc-biased transistor configurations (9)
Visit http://electronicsclub.cjb.net for more resources DC BIASING BJTs (Analysis & Design) Design Procedure..(3) Limits of operation....(3) BJT modes of operation...(4) The Beta(h FE ).....(5) Experiment
More informationEE105 - Fall 2006 Microelectronic Devices and Circuits
EE105 - Fall 2006 Microelectronic Devices and Circuits Prof. Jan M. Rabaey (jan@eecs) Lecture 21: Bipolar Junction Transistor Administrative Midterm Th 6:30-8pm in Sibley Auditorium Covering everything
More informationOptocoupler with Transistor Output
Optocoupler with Transistor Output 17197_4 DESCRIPTION The HS817 series consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 4-lead plastic dual inline package.
More informationChapter 5. BJT AC Analysis
Chapter 5. Outline: The r e transistor model CB, CE & CC AC analysis through r e model common-emitter fixed-bias voltage-divider bias emitter-bias & emitter-follower common-base configuration Transistor
More informationUNIVERSITY OF CALIFORNIA, BERKELEY College of Engineering Department of Electrical Engineering and Computer Sciences
UNIVERSITY OF CALIFORNIA, BERKELEY College of Engineering Department of Electrical Engineering and Computer Sciences EE 105: Microelectronic Devices and Circuits Spring 2008 MIDTERM EXAMINATION #1 Time
More information1.6mm Side Looking Phototransistor PT968-8C
Features Fast response time High sensitivity Small junction capacitance Pb Free This product itself will remain within RoHS compliant version. Description is a phototransistor in miniature package which
More information4-PIN PHOTOTRANSISTOR OPTOCOUPLERS
PACKAGE HAA84 SCHEMATIC 4 COLLECTOR 4 2 3 EMITTER DESCRIPTION The HAA84 Series consists of two gallium arsenide infrared emitting diodes, connected in inverse parallel, driving a single silicon phototransistor
More informationBCR191.../SEMB1 BCR191/F/L3 BCR191T/W BCR191S SEMB1. Type Marking Pin Configuration Package BCR191 BCR191F BCR191L3 2=E 2=E 2=E =C 3=C 3=C
PNP Silicon Digital Transistor Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (R = kω, R = kω ) For 6PIN packages: two (galvanic) internal isolated transistors with
More informationBD245, BD245A, BD245B, BD245C NPN SILICON POWER TRANSISTORS
, A, B, C Designed for Complementary Use with the BD26 Series W at 25 C Case Temperature 0 A Continuous Collector Current 5 A Peak Collector Current Customer-Specified Selections Available B C E SOT-9
More informationChapter 10 Instructor Notes
G. izzoni, Principles and Applications of lectrical ngineering Problem solutions, hapter 10 hapter 10 nstructor Notes hapter 10 introduces bipolar junction transistors. The material on transistors has
More informationPHOTOTRANSISTOR OPTOCOUPLERS
DESCRIPTION The CNY7 series consists of a Gallium Arsenide IRED coupled with an NPN phototransistor. FEATURES CNY7-/2/3 are also available in white package by specifying -M suffix (eg. CNY7-2-M) UL recognized
More informationChapter 13 Small-Signal Modeling and Linear Amplification
Chapter 13 Small-Signal Modeling and Linear Amplification Microelectronic Circuit Design Richard C. Jaeger Travis N. Blalock 1/4/12 Chap 13-1 Chapter Goals Understanding of concepts related to: Transistors
More informationSFH615A / SFH6156. Pb Pb-free. Optocoupler, High Reliability, 5300 V RMS VISHAY. Vishay Semiconductors
SFH6A / SFH66 Optocoupler, High Reliability, 300 V RMS Features Excellent CTR Linearity Depending on Forward Current Isolation Test Voltage, 300 V RMS Fast Switching Times Low CTR Degradation Low Coupling
More informationMOCD223M Dual-channel Phototransistor Small Outline Surface Mount Optocouplers
MOCD223M Dual-channel Phototransistor Small Outline Surface Mount Optocouplers Features U.L. Recognized (File #E90700, Volume 2) VDE Recognized (File #13616) (add option V for VDE approval, i.e, MOCD223VM)
More informationOptical (2.8) (2.3) PIN 1 ANODE PIN 2 CATHODE PIN 3 COLLECTOR PIN 4 EMITTER
PACKAGE DIMENSIONS 0.97 (.7) 0.957 (.3) 0.7 (.0) 0.57 (.6) Ø 0.33 (3.) Ø 0.6 (3.) (X) 0.9 (6.35) 0.3 (6.5) D E 0.755 (9.) 0.75 (8.9) 0.39 (.00) 0.3 (0.85) 0.9 (3.3) 0.9 (3.0) 0.03 (.60) NOM 0.33 (.0) 0.
More informationOptocoupler, Phototransistor Output, LSOP-4, 110 C Rated, Long Mini-Flat Package
TCLT11. Series Optocoupler, Phototransistor Output, LSOP-4, 11 C Rated, Long Mini-Flat Package 17295-5 DESCRIPTION The TCLT11. series consists of a phototransistor optically coupled to a gallium arsenide
More informationOptocoupler, Phototransistor Output, with Base Connection
Vishay Semiconductors Optocoupler, Phototransistor Output, FEATURES A 6 B Isolation test voltage 5300 V RMS Interfaces with common logic families C NC 2 3 V D E 5 4 C E Input-output coupling capacitance
More informationassess the biasing requirements for transistor amplifiers
1 INTODUTION In this lesson we examine the properties of the bipolar junction transistor (JT) amd its typical practical characteristics. We then go on to devise circuits in which we can take best advantage
More informationCOMPLEMENTARY NPN/PNP TRANSISTOR
SEMICONDUCTOR DATA SHEET COMPLEMENTARY NPN/PNP TRANSISTOR FEATURES Complementary Pair One 3904-Type NPN, One 3906-Type PNP Epitaxial Planar Die Construction Ideal for Low Power Amplification and Switching
More information4N25 4N26 4N27 4N28. MAXIMUM RATINGS (TA = 25 C unless otherwise noted) SCHEMATIC. Order this document by 4N25/D STANDARD THRU HOLE
Order this document by N/D GlobalOptoisolator The N, N, N7 and N8 devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector. Most
More information2N4921, 2N4922, 2N4923. Medium Power Plastic NPN Silicon Transistors 1.0 AMPERE GENERAL PURPOSE POWER TRANSISTORS VOLTS, 30 WATTS
2N4923 is a Preferred Device MediumPower Plastic NPN Silicon Transistors These highperformance plastic devices are designed for driver circuits, switching, and amplifier applications. Features Low Saturation
More informationCapacitors Diodes Transistors. PC200 Lectures. Terry Sturtevant. Wilfrid Laurier University. June 4, 2009
Wilfrid Laurier University June 4, 2009 Capacitor an electronic device which consists of two conductive plates separated by an insulator Capacitor an electronic device which consists of two conductive
More informationLecture 35 - Bipolar Junction Transistor (cont.) November 27, Current-voltage characteristics of ideal BJT (cont.)
6.720J/3.43J - Integrated Microelectronic Devices - Fall 2002 Lecture 35-1 Lecture 35 - Bipolar Junction Transistor (cont.) November 27, 2002 Contents: 1. Current-voltage characteristics of ideal BJT (cont.)
More informationRIGHT ANGLE SURFACE MOUNT INFRARED PHOTOTRANSISTOR
PACKAGE DIMENSIONS.16 (3.).11 (.8).43 (1.1).3 (.9) FRONT. (.).87 (.).71 (1.8).39 (1.).87 (.).71 (1.8) TOP.3 (.9) R.17 (.4) COLLECTOR MARK 1 NOTE:.16 (.4) BACK 1. Emitter. Collector 3. Tolerance of ±.1
More informationType Marking Pin Configuration Package BCX42 BSS63 1 = B 1 = B 2 = E 2 = E
, PNP Silicon AF an Swiching Transistors For general AF applications High breakdown voltage Low collectoremitter saturation voltage Complementary types: BCX4, BSS64 (NPN) VPS6 Type Marking Pin Configuration
More informationMOC8101, MOC8102, MOC8103, MOC8104, MOC8105 Optocoupler, Phototransistor Output, no Base Connection
MOC80, MOC80, MOC803, MOC80, MOC80 Optocoupler, Phototransistor Output, no Base Connection i79009- DESCRIPTION The MOC80, MOC80, MOC803, MOC80, MOC80 family optocoupler consisting of a gallium arsenide
More informationELEC 3908, Physical Electronics, Lecture 18. The Early Effect, Breakdown and Self-Heating
ELEC 3908, Physical Electronics, Lecture 18 The Early Effect, Breakdown and Self-Heating Lecture Outline Previous 2 lectures analyzed fundamental static (dc) carrier transport in the bipolar transistor
More informationK817P/ K827PH/ K847PH. Optocoupler with Phototransistor Output. Vishay Telefunken. Description. Applications. Features.
Optocoupler with Phototransistor Output K817P/ K827PH/ K847PH Description The K817P/ K827PH/ K847PH consist of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in an 4-lead
More informationESE319 Introduction to Microelectronics. BJT Biasing Cont.
BJT Biasing Cont. Biasing for DC Operating Point Stability BJT Bias Using Emitter Negative Feedback Single Supply BJT Bias Scheme Constant Current BJT Bias Scheme Rule of Thumb BJT Bias Design 1 Simple
More informationDATA SHEET. BC368 NPN medium power transistor; 20 V, 1 A DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2003 Dec 01.
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D86 Supersedes data of 2003 Dec 0 2004 Nov 05 FEATURES High current. APPLICATIONS Linear voltage regulators Low side switch Supply line switch for negative
More informationThe Devices. Jan M. Rabaey
The Devices Jan M. Rabaey Goal of this chapter Present intuitive understanding of device operation Introduction of basic device equations Introduction of models for manual analysis Introduction of models
More informationExcellent Integrated System Limited
Datasheet of CM2TU-12H - IGBT MOD 6PAC 6V 2A U SER Excellent Integrated System Limited Stocking Distributor Click to view price, real time Inventory, Delivery & Lifecycle Information: Powerex Inc. CM2TU-12H
More informationNPN/PNP low V CEsat Breakthrough in Small Signal (BISS) transistor pair in a SOT457 (SC-74) Surface Mounted Device (SMD) plastic package.
Rev. 02 14 July 2005 Product data sheet 1. Product profile 1.1 General description NPN/PNP low V CEsat Breakthrough in Small Signal (BISS) transistor pair in a SOT457 (SC-74) Surface Mounted Device (SMD)
More information2SC3457. isc Silicon NPN Power Transistor. isc Product Specification. INCHANGE Semiconductor. isc Website:
INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification DESCRIPTION High Breakdown oltage- : (BR)CBO = 1100(Min) Fast Switching Speed Wide Area of Safe Operation APPLICATIONS
More informationBipolar junction transistors
Bipolar junction transistors Find parameters of te BJT in CE configuration at BQ 40 µa and CBQ V. nput caracteristic B / µa 40 0 00 80 60 40 0 0 0, 0,5 0,3 0,35 0,4 BE / V Output caracteristics C / ma
More informationSilicon Diffused Darlington Power Transistor
GENERAL DESCRIPTION Highvoltage, monolithic npn power Darlington transistor in a SOT93 envelope intended for use in car ignition systems, DC and AC motor controls, solenoid drivers, etc. QUICK REFERENCE
More informationNPN/PNP transistor pair connected as push-pull driver in a SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package.
Rev. 0 26 September 2006 Product data sheet. Product profile. General description NPN/PNP transistor pair connected as push-pull driver in a SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package..2
More informationVidyalankar S.E. Sem. III [EXTC] Analog Electronics - I Prelim Question Paper Solution
. (a) S.E. Sem. [EXTC] Analog Electronics - Prelim Question Paper Solution Comparison between BJT and JFET BJT JFET ) BJT is a bipolar device, both majority JFET is an unipolar device, electron and minority
More informationOptocoupler, Phototransistor Output, with Base Connection
Vishay Semiconductors Optocoupler, Phototransistor Output, 2842 DESCRIPTION i79004-4 Each optocoupler consists of gallium arsenide infrared LED and a silicon NPN phototransistor. AGENCY APPROVALS Underwriters
More informationTechnical Data Sheet 1.5mm Side Looking Phototransistor
Technical Data Sheet 1.5mm Side Looking Phototransistor Features Fast response time High sensitivity Small junction capacitance Pb Free This product itself will remain within RoHS compliant version. Descriptions
More informationAK AJ AT AR DETAIL "A" N M L K B AB (6 PLACES) DETAIL "B" TH1 (11) TH2 (10) NTC *ALL PIN DIMENSIONS WITHIN A TOLERANCE OF ±0.5
Powerex, Inc., 73 Pavilion Lane, Youngwood, Pennsylvania 5697 (724) 925-7272 www.pwrx.com Six IGBTMOD + Brake NX-S Series Module AH AN AC AD AE H AK AJ A D E F G AK AJ AP AT AR AQ AS C AX BB BC BD DETAIL
More information6.012 Electronic Devices and Circuits
Page 1 of 12 YOUR NAME Department of Electrical Engineering and Computer Science Massachusetts Institute of Technology 6.012 Electronic Devices and Circuits FINAL EXAMINATION Open book. Notes: 1. Unless
More informationSilicon NPN Phototransistor Version 1.3 BPX 38
2016-01-04 Silicon NPN Phototransistor Version 1.3 BPX 38 Features: Spectral range of sensitivity: (typ) 450... 1120 nm Package: Metal Can (TO-18), hermetically sealed Special: Base connection Suitable
More informationFYSE400 ANALOG ELECTRONICS
YSE400 ANALOG ELECTONCS LECTUE 3 Bipolar Sub Circuits 1 BPOLA SUB CCUTS Bipolar Current Sinks and -Sources Transistor operates in forwardactive region. < < sat CE CN max CE < < + BN CN BN max CE N N N
More informationChapter 3 Output stages
Chapter 3 utput stages 3.. Goals and properties 3.. Goals and properties deliver power into the load with good efficacy and small power dissipate on the final transistors small output impedance maximum
More informationCNY64/ CNY65/ CNY66. Optocoupler with Phototransistor Output. Vishay Telefunken. Description. Applications. VDE Standards
Optocoupler with Phototransistor Output Description The CNY64/ CNY65/ CNY66 consist of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 4-lead plastic package. The
More informationGEORGIA INSTITUTE OF TECHNOLOGY School of Electrical and Computer Engineering
NAME: GEORGIA INSTITUTE OF TECHNOLOGY School of Electrical and Computer Engineering ECE 4430 First Exam Closed Book and Notes Fall 2002 September 27, 2002 General Instructions: 1. Write on one side of
More informationTechnical Data Sheet 1206 Package Phototransistor
Technical Data Sheet 126 Package Phototransistor Features Fast response time High photo sensitivity Small junction capacitance Pb free The product itself will remain within RoHS compliant version. Descriptions
More information