Week 7: Ch. 11 Semiconductor diodes

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1 Wk 7: Ch. 11 Smiconductor diods Principls o Scintilltion Countrs Smiconductor Diods bsics o smiconductors pur lmnts & dopnts 53 Mtrils ion collction, lkg currnt diod structur, pn, np junctions dpltion rgion Prctic Problms / m DJMorrissy, o17

2 Chp. 11 Smiconductor Diods Smiconductor diods provid th bst rsolution or nrgy msurmnts, silicon bsd dvics r gnrlly usd or chrgdprticls, grmnium or photons. Scintilltors ruir ~ 1 V / inormtion crrir.. Photolctrons in this cs Gs countrs ruir ~ 35 V / inormtion crrir.. Ionpirs or lctrons Solidstt dvics ruir ~ 3 V / inormtion crrir.. lctron/hol pirs Conduction Bnd Vlnc Bnd Mtl Insultor smiconductor is n insultor with smll bnd gp, ~1.V or silicon. Gnrlly wnt smllst bnd gp but thrml cittion cross th gp provids lkg currnt..b. th ctul bnd gp dpnds on th dirction rltiv to th lttic Si nd G do not crystlliz in cubic lttics nd th gp dcrss slowly with tmprtur. Th rtio o w to bnd gp is pproimtly constnt or wid rng o mtrils division o cittion nrgy btwn /h pir nd phonons, tc. is ~ constnt. DJMorrissy, o17 Fig Knoll, 3 rd d. C..Klin, J.pp. Phys

3 Smiconductors Chrg crrirs pur mtril, no dopnts is clld intrinsic Th intrinsic crrir dnsity in smiconductor is low: r r ~ ~ 1 V 19 C 1 19 / kbt! B k ~ 1 T 9.6 V 1 1 cm 5 C v nd c r th dnsitis o stts in th vlnc nd conduction bnds. Only rough stimts givn hr. r toms r MM 6.1 / mol.33g 8g / mol 3 / cm 3 51 cm 3 ~ 9 1 cm 51 cm g. Coppr hs ~ conduction lctrons / tom. dimond lttic Lttic Constnt Crbon.356 nm Silicon.543 nm Grmnium.565 nm DJMorrissy, o17

4 Smiconductors Dopnts dd toms rom th nighboring groups in th priodic tbl Group 15, Phosphorous, nrly sm siz, css lctron Group 13, Boron, nrly sm siz, lctron dicit Donor lvl rom P tom blow conduction bnd by ~.5 V.. Thrmlly cit rom donor, css lctrons ntyp Conduction Bnd ~ 1 V gp Vlnc Bnd DJMorrissy, o17.5/ 1 kt ~ Conduction Bnd ~ 1 V gp Vlnc Bnd ccptor lvl rom B tom bov vlnc bnd by ~.5 V.. Thrmlly citd rom vlnc bnd, css hols ptyp Control th conductivity by controlling th mount o dopnts!.b. ppb givs /cm /cm 3 >> 1 9 or Si For n ntyp mtril, th lctrons crry th currnt so tht th rsistivity is: 1 r D µ

5 Smiconductor Ion Chmbr? V R Imgin constructing simpl block o intrinsic smiconductor nd trying to us it s n ion chmbr Th block hs lngth, L nd cross sctionl r, with rsistivity o r 6k ohmcm high ulity silicon. pply nominl V 6V bis to collct ions. 1 MV nrgy into mtril crts ~ 31 5 /h in ~5 ns limiting drit vlocity ~ 1 7 cm/s 5 L 1 7 mps or L in cm i signl ~ Δ Δt L cm /1 7 cm / s V R tim I Lkg V R I Lkg V ρl DJMorrissy, o17 whr R ρ L 6 6, L L 1 3 mps or /L in cm Thus, I >> i so w nd trick to kill th lkg currnt.

6 Smiconductor Diods 1 ntyp ptyp ptyp ntyp Forwrd bis norml low o currnt Rvrs bis no nominl currnt Th typ is dtrmind by th implntd toms.. Dirnt toms cn b put into singl pic o smiconductor, thn n intrnl ild will orm du to migrtion o chrgs. DJMorrissy, o17

7 Smiconductor Diods Diusion o donor toms into bulk ptyp mtril givs concntrtion proil bulk ptyp dopnt concntrtion is much, much lowr thn th concntrtion o donor toms igur contins log scl Chrg dnsity, r: Migrtion o th chrg cross th boundry cuss chrg sprtion nd dpltion rgion in this cs th hols migrt or longr distnc du to imblnc in concntrtions in two rgions Which crts n intrnl lctric potntil, with potntil dirnc o ~ 1V Fig Knoll, 3 rd, 4 th ds. nd n lctric ild,, whr th lins o orc origint on positiv ions nd trmint on th ngtiv ions. Th dpltd rgion hs vry low concntrtion o mobil chrg crrirs nd vry high rsistivity this is vry good rgion to msur/collct ioniztion. DJMorrissy, o17

8 Smiconductor Diods Modl or Dpltion Dpth DJMorrissy, o17 b D b b b b V b b d d b d d D D D r & : b V Conditions Boundry & : b Conditions Boundry Chrg nutrlity givs: * D b* 1 Concntrtions vrsus position or 1Dimnsion On Dimnsionl Poisson ution in two rgions: : Mtch t b V D Dpltion dpth: combin 1 & b*b V / Gnrlly b >.. d b~ V / ½ Dpltion dpth, d b

9 Smiconductor Diods 3 Som proprtis o th junction: d ~ V & r 1 µ D Rctiying contct ohmic or blocking contct d ~ Vrµ D V / D & C d V d m On cn pply n trnl rvrs bis voltg such tht th dpltion lyr tnds rom th junction to th ull thicknss o th dvic Fig Knoll, 3 rd,4 th ds. Silicon Surc Brrir Dvic ntyp u SiO Si l Fig Knoll, 3 rd,4 th ds. Fig Knoll, 3 rd,4 th ds. From G&G Ortc DJMorrissy, o17

10 Smiconductor Diods TLS HP mm, n contcts.8 mm pitch Silicon lyrs r thin, typiclly.3mm but up 5mm r producd. dicttd by th smiconductor chip industry. D D Silicon Dtctor tlscops combin thin dvic with thick dvic to idntiy chrgd prticls. C d d C æ D Dç è DJMorrissy, o17 1 MZ d d æ lnçc è ö µ ø MZ M ö ø D µ 1 Punchthrough Sotwr cut D Li B B

11 Smiconductor Diods Micron Smiconductor DJMorrissy, o17

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