ECE321 Electronics I


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1 EE31 Electronics I Lecture 8: MOSET Threshold Voltage and Parasitic apacitances Payman ZarkeshHa Office: EE Bldg. 3B Office hours: Tuesday :3:PM or by appointment Slide: 1 Review of Last Lecture evice Model for Linear Region evice Model for Saturation Region hannel Length Modulation Slide: 1
2 Threshold Voltage Equation ynamic Parameters of Long hannel MOSET MOSET Parasitic apacitances Overlap capacitances hannel capacitances Junction capacitances Today s Lecture Slide: 3 Threshold Voltage Equation MOSET is a four terminal device; Gate, Source, rain, and Bulk. The Bulk may not be always connected to the Source. Slide: 4
3 Threshold Voltage Equation We normally assume that the bulk of the MOSET is connected to source. However, sometimes the bulk and source are in different potentials (V SB ). V SB is called body bias. The applied V SB changes the threshold voltage as shown below: V T V T VSB In this equation, V T is the zero bias threshold voltage, ү is the body bias coefficient, and φ is: KT q N Ln ni A Where N A is the doping concentration in the substrate. Slide: 5 Example: Threshold Voltage & Body Bias Assume that V T =.8V, ү=.6 V 1/, φ =.4 V. ind V T if V SB =.5 V V T V T VSB V T Observations: 1) Body bias is normally reverse bias. (why?) ) More reverse body bias increases the threshold voltage. Slide: 6 3
4 MOSET Threshold Voltage Slide: 7 More etail on MOSET Threshold Voltage Zero body bias threshold voltage: V T ms qn A si Q Threshold voltage with body bias: Important acts: Where: V T V Where: KT q T VSB N Ln ni qn Body bias increases threshold voltage Threshold voltage is positive for normal NMOS Threshold voltage is negative for normal PMOS A A si and t Slide: 8 4
5 MOS apacitance elay of digital MOS circuits depends of capacitance of MOS device There is a trade off between parasitic capacitance and drive strength of MOS device Larger increases the drive strength (I S equation) However, larger increases the device parasitic capacitance MOS parasitic capacitance includes Overlap capacitances hannel capacitances Junction capacitances Between almost every two terminals of MOS device, there is a source of parasitic capacitance Slide: 9 MOS Parasitic apacitances rain G GB B Gate Bulk GS Source SB Slide: 1 5
6 Overlap apacitances Because of the lateral S/ diffusion, there is an overlap between gate and S/ junctions This overlap capacitance is a constant linear capacitance GSOV GOV W X d L eff Slide: 11 hannel apacitances hannel capacitance is a voltage dependent and nonlinear capacitance G G G S G S G S G Psub Bulk Psub Bulk Psub Bulk utoff Region Linear Region Saturation Region Operation Region GBH GSH GH utoff OX WL eff Linear Saturation 1 WL OX eff WL OX eff 3 1 WL OX eff Slide: 1 6
7 Junction apacitances Junction capacitance is the depletion region capacitance of S/ It is a voltage dependent capacitance (remember reverse biased diode) G S n+ n+ Psub j 1 V SB j m j A siq NAN NA N 1 KT NAN Ln q ni Slide: 13 Junction apacitance omponents The Junction capacitance of bottom plate is treated separately from the three nongate edges The gate edge is often ignored since it is part of the conducting channel The bottom plate is usually step graded with m=.5 The sidewall are step graded with m=.33 and face the channelstop implant which has much higher doping than substrate hannelstop implant N A+ Side wall W Source N Bottom x j L S Side wall Substrate N A hannel Slide: 14 7
8 Junction apacitance omponents iff Bottom SW WL Bottom SW J JSW s L W s Slide: 15 MOS Parasitic apacitances G rain GB B GS G GSH GH GSOV GOV Gate Bulk GB GBH SB Sdiff GS Source SB B diff Slide: 16 8
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