Quad bus transceiver; 3-state. The output enable inputs (OEA and OEB) can be used to isolate the buses.

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1 Rev November 2004 Product data sheet 1. General description 2. Features The is a high-speed Si-gate CMOS device and is pin compatible with low power Schottky TTL (LSTTL). The is specified in compliance with JEDEC standard no. 7. The is a quad bus transceiver featuring non-inverting 3-state bus compatible outputs in both send and receive directions. The is designed for 4-line asynchronous 2-way data communications between data buses. The output enable inputs (OE and OEB) can be used to isolate the buses. The is similar to the 74HC242 but has non-inverting (true) outputs. Non-inverting 3-state outputs 2-way asynchronous data bus communication Low-power dissipation Complies with JEDEC standard no. 7 ESD protection: HBM EI/JESD B exceeds 2000 V MM EI/JESD exceeds 200 V. Multiple package options Specified from 40 C to+80 C and from 40 C to +125 C.

2 3. Quick reference data 4. Ordering information Table 1: Quick reference data GND = 0 V; T amb =25 C; t r =t f = 6 ns. Symbol Parameter Conditions Min Typ Max Unit t PHL, t PLH propagation delay n to Bn; C L = 15 pf; V CC = 5 V ns Bn to n C I input capacitance pf C I/O input/output capacitance pf C PD power dissipation capacitance per transceiver V I = GND to V CC [1] pf [1] C PD is used to determine the dynamic power dissipation (P D in µw). P D =C PD V 2 CC f i N+ (C L V 2 CC f o ) where: f i = input frequency in MHz; f o = output frequency in MHz; C L = output load capacitance in pf; V CC = supply voltage in V; N = number of inputs switching; (C L V 2 CC f o ) = sum of outputs. Table 2: Type number Ordering information Package Temperature range Name Description Version N 40 C to +125 C DIP14 plastic dual in-line package; 14 leads (300 mil) SOT27-1 D 40 C to +125 C SO14 plastic small outline package; 14 leads; SOT108-1 body width 3.9 mm DB 40 C to +125 C SSOP14 plastic shrink small outline package; 14 leads; body width 5.3 mm SOT337-1 Product data sheet Rev November of 17

3 5. Functional diagram 13 1 OEB OE ENBLE EXITING 3 0 B B B B aab953 Fig 1. Functional diagram OEB 13 OE 1 ENBLE EXITING 13 1 EN1 EN2 0 3 B B aab aab951 Fig 2. Logic symbol Fig 3. IEC logic symbol Product data sheet Rev November of 17

4 6. Pinning information 6.1 Pinning OE 1 14 V CC n.c OEB n.c B B B2 GND aab948 B3 Fig 4. Pin configuration 6.2 Pin description Table 3: Pin description Symbol Pin Description OE 1 output enable input (active LOW) n.c. 2 not connected 0 3 data input or output 1 4 data input or output 2 5 data input or output 3 6 data input or output GND 7 ground (0 V) B3 8 data output or input B2 9 data output or input B1 10 data output or input B0 11 data output or input n.c. 12 not connected OEB 13 output enable input V CC 14 positive supply voltage Product data sheet Rev November of 17

5 7. Functional description 8. Limiting values 7.1 Function table Table 4: Function table [1] Control [1] H = HIGH voltage level; L = LOW voltage level; Z = high-impedance OFF-state. Input or output OE OEB n Bn L L input B = H L Z Z L H Z Z H H = B input Table 5: Limiting values In accordance with the bsolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V). Symbol Parameter Conditions Min Max Unit V CC supply voltage V I IK input diode current V I < 0.5 V or V I >V CC V - ±20 m I OK output diode current V O < 0.5 V or - ±20 m V O >V CC V I O output source or sink V O = 0.5 V to V CC V - ±35 m current I CC, I GND V CC or GND current - ±70 m T stg storage temperature C P tot power dissipation DIP14 package [1] mw SO14 and SSOP16 packages [2] mw [1] bove 70 C: P tot derates linearly with 12 mw/k. [2] bove 70 C: P tot derates linearly with 8 mw/k. Product data sheet Rev November of 17

6 9. Recommended operating conditions Table 6: 10. Static characteristics Recommended operating conditions Symbol Parameter Conditions Min Typ Max Unit V CC supply voltage V V I input voltage 0 - V CC V V O output voltage 0 - V CC V t r, t f input rise and fall V CC = 2.0 V ns times V CC = 4.5 V ns V CC = 6.0 V ns T amb ambient temperature C Table 7: Static characteristics t recommended operating conditions; voltages are referenced to GND (ground = 0 V). Symbol Parameter Conditions Min Typ Max Unit T amb =25 C V IH HIGH-level input voltage V CC = 2.0 V V V CC = 4.5 V V V CC = 6.0 V V V IL LOW-level input voltage V CC = 2.0 V V V CC = 4.5 V V V CC = 6.0 V V V OH HIGH-level output voltage V I =V IH or V IL I O = 20 µ; V CC = 2.0 V V I O = 20 µ; V CC = 4.5 V V I O = 20 µ; V CC = 6.0 V V I O = 6.0 m; V CC = 4.5 V V I O = 7.8 m; V CC = 6.0 V V V OL LOW-level output voltage V I =V IH or V IL I O =20µ; V CC = 2.0 V V I O =20µ; V CC = 4.5 V V I O =20µ; V CC = 6.0 V V I O = 6.0 m; V CC = 4.5 V V I O = 7.8 m; V CC = 6.0 V V I LI input leakage current V I =V CC or GND; V CC = 6.0 V - - ±0.1 µ I OZ 3-state OFF-state current V I =V IH or V IL ; V CC = 6.0 V; - - ±0.5 µ V O =V CC or GND I CC quiescent supply current V I =V CC or GND; I O =0; µ V CC = 6.0 V C I input capacitance pf C I/O input/output capacitance pf Product data sheet Rev November of 17

7 Table 7: Static characteristics continued t recommended operating conditions; voltages are referenced to GND (ground = 0 V). Symbol Parameter Conditions Min Typ Max Unit T amb = 40 C to +85 C V IH HIGH-level input voltage V CC = 2.0 V V V CC = 4.5 V V V CC = 6.0 V V V IL LOW-level input voltage V CC = 2.0 V V V CC = 4.5 V V V CC = 6.0 V V V OH HIGH-level output voltage V I =V IH or V IL I O = 20 µ; V CC = 2.0 V V I O = 20 µ; V CC = 4.5 V V I O = 20 µ; V CC = 6.0 V V I O = 6.0 m; V CC = 4.5 V V I O = 7.8 m; V CC = 6.0 V V V OL LOW-level output voltage V I =V IH or V IL I O =20µ; V CC = 2.0 V V I O =20µ; V CC = 4.5 V V I O =20µ; V CC = 6.0 V V I O = 6.0 m; V CC = 4.5 V V I O = 7.8 m; V CC = 6.0 V V I LI input leakage current V I =V CC or GND; V CC = 6.0 V - - ±1.0 µ I OZ 3-state OFF-state current V I =V IH or V IL ; V CC = 6.0 V; - - ±5.0 µ V O =V CC or GND I CC quiescent supply current V I =V CC or GND; I O =0; V CC = 6.0 V µ T amb = 40 C to +125 C V IH HIGH-level input voltage V CC = 2.0 V V V CC = 4.5 V V V CC = 6.0 V V V IL LOW-level input voltage V CC = 2.0 V V V CC = 4.5 V V V CC = 6.0 V V V OH HIGH-level output voltage V I =V IH or V IL - I O = 20 µ; V CC = 2.0 V V I O = 20 µ; V CC = 4.5 V V I O = 20 µ; V CC = 6.0 V V I O = 6.0 m; V CC = 4.5 V V I O = 7.8 m; V CC = 6.0 V V Product data sheet Rev November of 17

8 Table 7: Static characteristics continued t recommended operating conditions; voltages are referenced to GND (ground = 0 V). Symbol Parameter Conditions Min Typ Max Unit V OL LOW-level output voltage V I =V IH or V IL - I O =20µ; V CC = 2.0 V V I O =20µ; V CC = 4.5 V V I O =20µ; V CC = 6.0 V V I O = 6.0 m; V CC = 4.5 V V I O = 7.8 m; V CC = 6.0 V V I LI input leakage current V I =V CC or GND; V CC = 6.0 V - - ±1.0 µ I OZ 3-state OFF-state current V I =V IH or V IL ; V CC = 6.0 V; - - ±10.0 µ V O =V CC or GND I CC quiescent supply current V I =V CC or GND; I O =0; V CC = 6.0 V µ 11. Dynamic characteristics Table 8: Dynamic characteristics GND = 0 V; t r =t f = 6 ns; C L = 50 pf; R L = 1000 Ω; see Figure 8. Symbol Parameter Conditions Min Typ Max Unit T amb = 25 C t PHL, t PLH propagation delay n to Bn; Bn to n see Figure 5 V CC = 2.0 V ns V CC = 4.5 V ns V CC = 6.0 V ns V CC = 5.0 V; C L =15pF ns t PZH, t PZL 3-state output enable time OE to n or Bn; OEB to n or Bn see Figure 6 and 7 V CC = 2.0 V ns V CC = 4.5 V ns V CC = 6.0 V ns t PHZ, t PLZ 3-state output disable time OE to n or Bn; OEB to n or Bn see Figure 6 and 7 V CC = 2.0 V ns V CC = 4.5 V ns V CC = 6.0 V ns t THL, t TLH output transition time see Figure 5 V CC = 2.0 V ns V CC = 4.5 V ns V CC = 6.0 V ns C PD power dissipation capacitance per transceiver V I = GND to V CC [1] pf T amb = 40 C to +85 C t PHL, t PLH propagation delay n to Bn; Bn to n see Figure 5 V CC = 2.0 V ns V CC = 4.5 V ns V CC = 6.0 V ns Product data sheet Rev November of 17

9 Table 8: Dynamic characteristics continued GND = 0 V; t r =t f = 6 ns; C L = 50 pf; R L = 1000 Ω; see Figure 8. Symbol Parameter Conditions Min Typ Max Unit t PZH, t PZL 3-state output enable time OE to n or Bn; OEB to n or Bn [1] C PD is used to determine the dynamic power dissipation (P D in µw). P D =C PD V 2 CC f i N+ (C L V 2 CC f o ) where: f i = input frequency in MHz; f o = output frequency in MHz; C L = output load capacitance in pf; V CC = supply voltage in V; N = number of inputs switching; (C L V 2 CC f o ) = sum of outputs. see Figure 6 and 7 V CC = 2.0 V ns V CC = 4.5 V ns V CC = 6.0 V ns t PHZ, t PLZ 3-state output disable time OE to n or Bn; see Figure 6 and 7 OEB to n or Bn V CC = 2.0 V ns V CC = 4.5 V ns V CC = 6.0 V ns t THL, t TLH output transition time see Figure 5 V CC = 2.0 V ns V CC = 4.5 V ns V CC = 6.0 V ns T amb = 40 C to +125 C t PHL, t PLH propagation delay n to Bn; Bn to n see Figure 5 V CC = 2.0 V ns V CC = 4.5 V ns V CC = 6.0 V ns t PZH, t PZL 3-state output enable time OE to n or Bn; see Figure 6 and 7 OEB to n or Bn V CC = 2.0 V ns V CC = 4.5 V ns V CC = 6.0 V ns t PHZ, t PLZ 3-state output disable time OE to n or Bn; see Figure 6 and 7 OEB to n or Bn V CC = 2.0 V ns V CC = 4.5 V ns V CC = 6.0 V ns t THL, t TLH output transition time see Figure 5 V CC = 2.0 V ns V CC = 4.5 V ns V CC = 6.0 V ns Product data sheet Rev November of 17

10 12. Waveforms n, Bn input V M t PHL t PLH Bn, n output V M t THL t TLH 001aab955 V M = 0.5 V I. Fig 5. Waveforms showing the input (n and Bn) to output (Bn and n) propagation delays and the output transition times t r t f OE input 10 % 90 % V M t PLZ t PZL output LOW to OFF OFF to LOW 10 % V M output HIGH to OFF OFF to HIGH t PHZ 90 % t PZH V M outputs enabled outputs disabled outputs enabled 001aab959 V M = 0.5 V I. Fig 6. Waveforms showing the 3-state enable and disable times for input OE Product data sheet Rev November of 17

11 t r t f OEB input 90 % V M 10 % t PLZ t PZL output LOW to OFF OFF to LOW 10 % V M output HIGH to OFF OFF to HIGH t PHZ 90 % t PZH V M outputs enabled outputs disabled outputs enabled 001aab956 Fig 7. V M = 0.5 V I. Waveforms showing the 3-state enable and disable times for input OEB PULSE GENERTOR V I V CC D.U.T. V O S 1 RL = 1000 Ω V CC open GND RT C L mna232 Fig 8. Test data is given in Table 9. Definitions for test circuit: R L = Load resistor. C L = Load capacitance including jig and probe capacitance. R T = Termination resistance should be equal to the output impedance Z o of the pulse generator. Load circuitry for switching times Table 9: Test data Supply Input Load S 1 V CC V I t r = t f C L R L t PZL, t PLZ t PZH, t PHZ t PHL, t PLH 2.0 V V CC 6 ns 50 pf 1 kω V CC GND open 4.5 V V CC 6 ns 50 pf 1 kω V CC GND open 6.0 V V CC 6 ns 50 pf 1 kω V CC GND open 5.0 V V CC 6 ns 15 pf 1 kω V CC GND open Product data sheet Rev November of 17

12 13. Package outline DIP14: plastic dual in-line package; 14 leads (300 mil) SOT27-1 D M E seating plane 2 L 1 Z 14 e b b 1 8 w M c (e ) 1 M H pin 1 index E mm scale DIMENSIONS (inch dimensions are derived from the original mm dimensions) UNIT mm inches max. 1 2 (1) (1) min. max. b b 1 c D E e e 1 L M E M H w (1) Z max Note 1. Plastic or metal protrusions of 0.25 mm (0.01 inch) maximum per side are not included. OUTLINE VERSION REFERENCES IEC JEDEC JEIT EUROPEN PROJECTION ISSUE DTE SOT G04 MO-001 SC Fig 9. Package outline SOT27-1 (DIP14) Product data sheet Rev November of 17

13 SO14: plastic small outline package; 14 leads; body width 3.9 mm SOT108-1 D E X c y H E v M Z 14 8 Q pin 1 index 2 1 ( ) 3 θ L p 1 7 L e b p w M detail X mm scale DIMENSIONS (inch dimensions are derived from the original mm dimensions) UNIT mm inches max b p c D (1) E (1) e H (1) E L L p Q v w y Z Note 1. Plastic or metal protrusions of 0.15 mm (0.006 inch) maximum per side are not included θ o 8 o OUTLINE VERSION REFERENCES IEC JEDEC JEIT EUROPEN PROJECTION ISSUE DTE SOT E06 MS Fig 10. Package outline SOT108-1 (SO14) Product data sheet Rev November of 17

14 SSOP14: plastic shrink small outline package; 14 leads; body width 5.3 mm SOT337-1 D E X c y H E v M Z 14 8 Q 2 1 ( ) 3 pin 1 index 1 7 L detail X L p θ e b p w M mm scale DIMENSIONS (mm are the original dimensions) UNIT b p c D (1) E (1) e H E L L p Q v w y Z(1) max. mm θ o 8 o 0 Note 1. Plastic or metal protrusions of 0.25 mm maximum per side are not included. OUTLINE VERSION REFERENCES IEC JEDEC JEIT EUROPEN PROJECTION ISSUE DTE SOT337-1 MO Fig 11. Package outline SOT337-1 (SSOP14) Product data sheet Rev November of 17

15 14. Revision history Table 10: Revision history Document ID Release Data sheet status Change notice Doc. number Supersedes date _ Product data sheet HC_HCT243_CNV_2 Modifications: The format of this data sheet has been redesigned to comply with the current presentation and information standard of Philips Semiconductors. Removed type number 74HCT243. Inserted family specification. 74HC_HCT243_CNV_ Product specification HC_HCT243_1 74HC_HCT243_ Product specification Product data sheet Rev November of 17

16 15. Data sheet status Level Data sheet status [1] Product status [2] [3] Definition I Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. II Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. III Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). [1] Please consult the most recently issued data sheet before initiating or completing a design. [2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL [3] For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. 16. Definitions 17. Disclaimers Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition Limiting values given are in accordance with the bsolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. pplication information pplications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Life support These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes Philips Semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status Production ), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. 18. Contact information For additional information, please visit: For sales office addresses, send an to: sales.addresses@ Product data sheet Rev November of 17

17 19. Contents 1 General description Features Quick reference data Ordering information Functional diagram Pinning information Pinning Pin description Functional description Function table Limiting values Recommended operating conditions Static characteristics Dynamic characteristics Waveforms Package outline Revision history Data sheet status Definitions Disclaimers Contact information Koninklijke Philips Electronics N.V ll rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 12 November 2004 Document number: Published in The Netherlands

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The 74HC21 provide the 4-input AND function.

The 74HC21 provide the 4-input AND function. Rev. 03 12 November 2004 Product data sheet 1. General description 2. Features 3. Quick reference data The is a high-speed Si-gate CMOS device and is pin compatible with low-power Schottky TTL (LSTTL).