Low-Drop Voltage Tracker TLE 4250 G
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1 Low-Drop Voltage Tracker TLE 5 G Features Output tracking tolerance ±.5% 5 ma output current Combined Tracking/Enable input Very low current consumption in off mode Low drop voltage Suitable for use in automotive electronics Wide operation range: up to V Wide temperature range: C T j 15 C Output protected against short circuit Overtemperature protection Reverse polarity proof Very small SMD-Package SCT 595 SCT 595 Type Ordering Code Package TLE 5 G Q7-A951 SCT-595 (SMD) Functional Description The TLE 5 G is a monolithic integrated low-drop voltage tracker in the very small SMD package SCT 595. It is designed to supply e.g. sensors under the severe conditions of automotive applications. Therefore the device is equipped with additional protection functions against overload, short circuit and reverse polarity. Supply voltages up to V are tracked to a reference voltage at the adjust input. Therefore the Adjust pin has to be connected to a reference voltage, e.g. to a 5 V supply on a micro-controller port. The output is able to drive a load up to 5 ma while it follows the output of a main voltage regulator within an accuracy of.5%. The TLE 5 G can be switched in stand-by mode via the adjust input which causes the current consumption to drop to very low values. This feature makes the IC suitable for low power battery applications. Data Sheet Rev
2 TLE 5 G ADJ 1 5 GND GND Ι Q AEP581 Figure 1 Pin Configuration (top view) Pin Definitions and Functions Pin No. Symbol Function 1 ADJ Adjust/Enable input; connect to the reference voltage via ext. resistor or micro-controller port; high active input GND Ground; internally connected to pin 5 I Input voltage Q Output voltage; must be blocked by a capacitor C Q 1 µf, Ω ESR 7 Ω 5 GND Ground Data Sheet Rev.. -1-
3 TLE 5 G TLE 5G Ι Q ADJ, 5 AEB58 Figure Block Diagram Data Sheet Rev.. -1-
4 TLE 5 G Absolute Maximum Ratings C < T j < 15 C Parameter Symbol Limit Values Unit Remarks min. max. Input Voltage V I 5 V Current I I ma internally limited Output Voltage V Q 1 V Current I Q ma internally limited Adjust Voltage V ADJ. V Current I ADJ µa internally limited Temperatures Junction temperature T j 15 C Storage temperature T stg 5 15 C Thermal Resistances Junction pin R thj-pin K/W measured to pin 5 Junction ambient R thja 99 K/W 1) 1) Worst case, regarding peak temperature; zero airflow; mounted an a PCB mm, heat sink area mm. Note: Maximum ratings are absolute ratings; exceeding any one of these values may cause irreversible damage to the integrated circuit. Data Sheet Rev.. -1-
5 TLE 5 G Operating Range Parameter Symbol Limit Values Unit Remarks min. max. Input voltage V I V Adjust input voltage V ADJ.5 V Junction temperature T j 15 C Data Sheet Rev
6 TLE 5 G Electrical Characteristics V I = 1.5 V; V ADJ >.5V; C <T j <15 C; unless otherwise specified Parameter Symbol Limit Values Unit Test Condition min. typ. max. Output Output voltage tracking accuracy V Q = V ADJ V Q Output voltage tracking accuracy Output voltage tracking accuracy V Q 5 5 mv V < V I < 8 V 1 ma < I Q < 5 ma V Q 5 5 mv V < V I < V 1 ma < I Q < 1 ma V Q 5 5 mv V < V I < 1 V 1 ma < I Q < 1 ma Drop voltage V dr 1 mv I Q = 1 ma; V ADJ >V 1) Output current I Q 5 7 ma 1) T j <15 C Output capacitor C Q 1 µf at 1 khz; Ω ESR 7 Ω Current consumption I q 1.5. ma I Q < ma I q = I I I Q Current consumption I q = I I I Q I q 8 15 µa I Q < 1 ma Quiescent current (stand-by) I q = I I I Q Current consumption (drop area) I q 1 µa V ADJ = V T j < 85 C I q ma V ADJ = V I =5V I Q = ma Load regulation V Q mv 1 ma < I Q < ma Line regulation V Q 1 1 mv V < V I < V I Q = 1 ma 1) Measured when the output voltage VQ has dropped 1 mv from the nominal value. Data Sheet Rev.. -1-
7 TLE 5 G Electrical Characteristics (cont d) V I = 1.5 V; V ADJ >.5V; C <T j <15 C; unless otherwise specified Parameter Symbol Limit Values Unit Test Condition Power-Supply-Ripple- Rejection min. typ. max. PSRR db f r = 1 Hz V r =.5 V PP Adjust/Enable Input Input biasing current I ADJ.1.5 µµa V ADJ = 5 V Adjust low voltage to disable V ADJ.8 V T j < 15 C V Q off Adjust range V ADJ. V V Q V ADJ <5mV T j < 15 C... V VΙ e.g. TLE 7 TLE 7 V Q V CC TLE 78 µc 1 nf GND V ADJ 5 V I/O C Ι 1 nf Ι TLE 5G Q C 1 µ Q F R. Q Ω 5 V e.g. to sensor ADJ, 5 AES58 Figure Application Circuit Data Sheet Rev
8 TLE 5 G Region of Stability for C Q = 1 µf Region of Stability for C Q =. µf AED917 AED918 ESR Ω ESR Ω ma I Q 5 1 ma I Q 5 Data Sheet Rev
9 TLE 5 G Typical Performance Characteristics Tracking Accuracy V Q versus Temperature T j Tracking Accuracy V Q versus Output Current I Q AED7 15 AED71 V Q mv V Q mv C 5 C C 1 T j ma 5 Ι Q Output Voltage V Q versus Adjust Voltage V ADJ, V I > V ADJ Output Voltage V Q versus Input Voltage V I, V ADJ =5V AED7 AED7 V Q V V Q V V V V ADJ V I Data Sheet Rev
10 TLE 5 G Drop Voltage V DR versus Output Current I Q, V ADJ =5V Current Consumption I q versus Output Current I Q V Q mv AED7 Ι q ma AED ma 5 Output Current I Q versus Input Voltage V I Ι Q 1 ma 5 Current Consumption I q versus Input Voltage V I, V ADJ =5V Ι Q Ι Q 1 ma AED1 Ι q ma AED Tj = 5 C T j = 15 C 1 Ι = ma q Ι q = 1 ma 1 V 5 1 V V I V I Data Sheet Rev
11 TLE 5 G Package Outlines SCT-595 (Special Package) (.1) B (.) 1) (.) 1) ±. (.) (.) acc. to DIN 78. max.5 min 1 max. M 1.1 max A.1 max max 1. ±.1 A M B 1) Contour of slot depends on profile of gull-wing lead form Sorts of Packing Package outlines for tubes, trays etc. are contained in our Data Book Package Information. SMD = Surface Mounted Device Dimensions in mm Data Sheet Rev
12 TLE 5 G Edition -1- Published by Infineon Technologies AG, St.-Martin-Strasse 5, D-8151 München Infineon Technologies AG. All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of noninfringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Representatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Data Sheet Rev
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Fast IGBT in NPT-technology 75% lower E off compared to previous generation combined with low conduction losses Short circuit withstand time 10 µs Designed for: - Motor controls - Inverter NPT-Technology
More informationPreliminary data. Maximum Ratings,at T j = 25 C, unless otherwise specified Parameter Symbol Value Unit Continuous drain current I D. I D puls -2.
OptiMOS -P Small-Signal-Transistor Feature P-Channel Enhancement mode Super Logic Level (.5 V rated) 5 C operating temperature valanche rated dv/dt rated Product Summary V DS - V R DS(on) 55 mω I D -.58
More informationType Marking Pin Configuration Package BFN24 BFN26 1=B 1=B
BFN4, BFN6 NPN Silicon HighVoltage Transistors Suitable for video output stages in TV sets and switching power supplies High breakdown voltage Low collectoremitter saturation voltage Complementary type:
More informationType Marking Pin Configuration Package BCX42 DKs 1 = B 2 = E 3 = C SOT23. Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage V CEO
PNP Silicon AF and Switching Transistor For general AF applications High breakdown voltage Low collectoremitter saturation voltage Complementary type: BCX4 (NPN) Pbfree (RoHS compliant) package Qualified
More informationIDP45E60. Fast Switching Diode. Product Summary V RRM 600 V I F 45 A V F 1.5 V T jmax 175 C. Features 600V Emitter Controlled technology
Fast Switching Diode Features 600V Emitter Controlled technology Fast recovery Soft switching Low reverse recovery charge Low forward voltage Easy paralleling Pb-free lead plating; RoHS compliant Halogen-free
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Cool MOS Power Transistor New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated Extreme dv/dt rated Optimized capacitances Improved noise immunity Final data SPI7N6S5
More informationType Marking Pin Configuration Package SMBT2222A/MMBT2222A s1p 1 = B 2 = E 3 = C SOT23
SMBTA/MMBTA NPN Silicon Switching Transistor Low collectoremitter saturation voltage omplementary type: SMBT97A / MMBT97A (PNP) 1 Pbfree (RoHS compliant) package Qualified according AE Q1 Type Marking
More informationPreliminary data. Maximum Ratings,at T j = 25 C, unless otherwise specified Parameter Symbol Value Unit Continuous drain current I D. I D puls 5.
Cool MOS =Power Transistor =New revolutionary high voltage technology Ultra low gate charge =Periodic avalanche rated Extreme dv/dt rated =Optimized capacitances =Improved noise immunity =Former development
More informationGM4275 GM4275 V2.03. Features. Description. Applications. Block Diagram WIDE INPUT RANGE 5V LOW DROPOUT REGULATOR WITH RESET FLAG
Description The GM4275 series of fixed output, micro-power voltage regulators is designed for applications which require wide input voltage range up to 45V. The GM4275 is an excellent choice for the use
More informationI C P tot 138 W
High Speed IGBT in NPT-technology 30% lower E off compared to previous generation C Short circuit withstand time 10 µs Designed for operation above 30 khz G E NPT-Technology for 600V applications offers:
More informationType Marking Pin Configuration Package BFN27 FLs 1=B 2=E 3=C SOT23
PNP Silicon HighVoltage Transistors Suitable for video output stages in TV sets and switching power supplies High breakdown voltage 2 Low collectoremitter saturation voltage omplementary types: BFN26 (NPN)
More informationType Marking Pin Configuration Package BCM856S 3Ms 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363
BM86S PNP Silicon AF Transistor Array Precision matched transistor pair: I % For current mirror applications Low collectoremitter saturation voltage Two (galvanic) internal isolated Transistors omplementary
More informationType Marking Pin Configuration Package BFN38 BFN38 1=B 2=C 3=E 4=C - - SOT223
NPN Silicon HighVoltage Transistors Suitable for video output stages TV sets and switching power supplies High breakdown voltage 2 Low collectoremitter saturation voltage Complementary type: BFN9 (PNP)
More informationPG-TO I C. A Pulsed collector current, t p limited by T jmax I Cpuls 62 Turn off safe operating area V CE 600V, T j 150 C - 62
Fast IGBT in NPTtechnology 75% lower E off compared to previous generation combined with low conduction losses Short circuit withstand time 10 µs Designed for: Motor controls Inverter NPTTechnology for
More informationTrenchStop Series. Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode
Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology with soft, fast recovery antiparallel Emitter Controlled HE diode C G E Automotive AEC Q101 qualified Designed for DC/AC converters for Automotive
More informationType Marking Pin Configuration Package BCW66KF BCW66KG BCW66KH 1=B 1=B 1=B
NPN Silicon AF Transistors For general AF applications High current gain Low collectoremitter saturation voltage omplementary type: BW68 (PNP) Pbfree (RoHS compliant) package Qualified according AE Q Type
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Silicon Tuning Diodes High capacitance ratio High Q hyperabrupt tuning diode Low series resistance Designed for low tuning voltage operation for VCO's in mobile communications equipment Very low capacitance
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BSO6NS OptiMOS Power-Transistor Feature Dual N-Channel Enhancement mode Logic Level 5 C operating temperature valanche rated dv/dt rated Product Summary V DS 55 V R DS(on) 35 mω I D 5 P-DSO-8-7 Type Package
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Low Loss IGBT in TrenchStop and Fieldstop technology Short circuit withstand time 10µs Designed for : Frequency Converters Uninterrupted Power Supply TrenchStop and Fieldstop technology for 1200 V applications
More informationProduct Summary V RRM 600 V I F 23 A V F 1.5 V T jmax 175 C 600V diode technology
Fast Switching Diode Features Product Summary V RRM 600 V I F 23 V F 1.5 V T jmax 175 C 600V diode technology Fast recovery Soft switching Low reverse recovery charge Low forward voltage Easy paralleling
More informationRev Maximum Ratings, at T j = 25 C, unless otherwise specified Parameter Symbol Value Unit Continuous drain current I D
SIPMOS PowerTransistor Feature NChannel Enhancement mode Logic Level dv/dt rated Pbfree lead plating; RoHS compliant Product Summary V DS 4 V R DS(on) 25 Ω I D.17 SOT223 Type Package Tape and Reel Information
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