ECE335F: Electronic Devices Syllabus. Lecture*
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1 Lecture 1 - Introduction: Course Overview 1 - Introduction: Course Overview 2 1 Crystal Structure of Solids 2 1 Crystal Structure of Solids 1.1 Semiconductor materials 1.1 Semiconductor materials 1.2 Types of solids 1.2 Types of solids 1.3 Space lattices 1.3 Space lattices 1.4 Atomic bonding 1.4 The Diamond Structure 1.5 Imperfections and impurities in solids 1.5 Atomic bonding 1.6 Growth of semiconductor materials 1.6 Imperfections and impurities in solids 1.7 Growth of semiconductor materials 3,4 2 Quantum Mechanics 3,4 2 Quantum Mechanics 2.1 Principles of quantum mechanics 2.1 Principles of quantum mechanics 2.2 Schroinger's wave equation - qualitative 2.2 Schroinger's wave equation - qualitative 2.3 Applications of Schroinger's wave equation- qualitative 2.3 Applications of Schroinger's wave equation- qualitative 2.4 Extensions of the wave theory to ato 2.4 Extensions of the wave theory to ato 4,5 3 Quantum Theory of Solids 4,5 3 Quantum Theory of Solids Formation of energy bands Formation of energy bands The k-space diagram - qualitative The k-space diagram - qualitative Energy band and the bond model Energy band and the bond model Electron effective mass Electron effective mass Concept of the hole - qualitative Concept of the hole - qualitative Metals, insulators, and semiconductors Metals, insulators, and semiconductors k-space diagra - qualitative k-space diagra - qualitative 3.4 Density of states 3.4 Density of states 3.5 Statistical Mechanics: Fermi Distribution 3.5 Statistical Mechanics: Fermi Distribution 6 4 Semiconductor in Equilibrium 6 4 Semiconductor in Equilibrium 4.1 Charge carriers in semiconductors 4.1 Charge carriers in semiconductors 4.2 Dopant ato and energy levels 4.2 Dopant ato and energy levels Extrinsic semiconductor Extrinsic semiconductor 4.4 Statistics of donors and acceptors 4.4 Statistics of donors and acceptors Charge neutrality Charge neutrality 4.6 Position of Fermi energy level 4.6 Position of Fermi energy level 1 of 4
2 Lecture 9 5 Carrier Transport Phenomena 9 5 Carrier Transport Phenomena 5.1 Carrrier drift 5.1 Carrrier drift Carrrier diffusion Carrrier diffusion 5.3 Grad impurity diffusion 5.3 Grad impurity diffusion 5.4 Hall effect - qualitative 5.4 Hall effect - qualitative 6 Nonequilibrium Excess Carriers in Semiconductors 6 Nonequilibrium Excess Carriers in Semiconductors 6.1 Carrier generation and recombination 6.1 Carrier generation and recombination 11, Characteristics of excess carriers 11, Characteristics of excess carriers 6.3 Ambipolar transport (qualitative) 6.3 Ambipolar transport (qualitative) 6.4 Quasi-Fermi energy levels 6.4 Quasi-Fermi energy levels 6.5 Excess-carrier lifetime (qualitative) 6.5 Excess-carrier lifetime (qualitative) 6.6 Surface effects (qualitative) 6.6 Surface effects (qualitative) 13 7 pn Junction 13 7 pn Junction 7.1 Basic structure 7.1 Basic structure 7.2 Zero appli bias 7.2 Zero appli bias Reverse appli bias Reverse appli bias 7.4 Nonuniformly dop junctions - qualitative 7.4 Junction Breakdown 7.5 Nonuniformly dop junctions - qualitative 15 8 pn Junction Diode 15 8 pn Junction Diode 8.1 pn junction current 8.1 pn junction current Small-signal model of the pn junction Generation-recombination currents (qualitative) 8.3 Generation-recombination currents (qualitative) 8.3 Small-signal model of the pn junction Junction breakdown Tunnel diode 8.6 Tunnel diode 18,19 9 Metal-Semiconductor and Semiconductor Heterojunctions 18,19 9 Metal-Semiconductor and Semiconductor Heterojunctions 9.1 Schottky barrier diode 9.1 Schottky barrier diode Metal-semiconductor ohmic contacts Metal-semiconductor ohmic contacts Heterojunctions (qualitative) Heterojunctions (qualitative) 2 of 4
3 Lecture Fundamentals of the MOSFET Fundamentals of the MOSFET 11.1 The Two-terminal MOS structure 10.1 The Two-terminal MOS structure Energy-band diagra Energy-band diagra Depletion layer thickness Depletion layer thickness Work function differences Surface Charge Density Flat-band voltage Work function differences Threshold voltage Flat-band voltage Charge distribution Threshold voltage Capacitance-voltage characteristics Capacitance-voltage characteristics Basic MOSFET characteristics Basic MOSFET characteristics Frequency limitations Frequency limitations 11.5 CMOS technology (qualitative) 10.5 CMOS technology (qualitative) 28, MOSFET: Additional Concepts 28, MOSFET: Additional Concepts 12.1 Nonideal effects 11.1 Nonideal effects Subthreshold conduction Subthreshold conduction Channel length modulation Channel length modulation Mobility variation Mobility variation Velocity saturation Velocity saturation 30 Semiconductor Fabrication Processes: An overview 30 Semiconductor Fabrication Processes: An overview Optical Devices Optical Devices 14.1 Optical absorption 14.1 Optical absorption 14.2 Solar cells 14.2 Solar cells Photodetectors Photodetectors 14.4 Photoluminescence and electroluminescence 14.4 Photoluminescence and electroluminescence Light emitting diodes Light emitting diodes 14.6 Laser diodes 14.6 Laser diodes 3 of 4
4 Lecture Bipolar Transistor Bipolar Transistor 10.1 Bipolar transistor action 12.1 Bipolar transistor action Minority carrier distribution Minority carrier distribution Low frequency common-base current gain Low frequency common-base current gain 10.4 Nonideal effects 12.4 Nonideal effects Base width modulation Base width modulation Breakdown voltage Breakdown voltage 10.5 Equivalent circuit models - overview 12.5 Equivalent circuit models - overview 10.6 Frequency limitations 12.6 Frequency limitations 37, 38 Advanc Semiconductor devices 37,38 Advanc Semiconductor devices Summary/Buffer Summary/Buffer *Tentative lecture content and schule; actual content and schule may differ. *Tentative lecture content and schule; actual content and schule may differ. 4 of 4
5 ECE335F: ELECTRONIC DEVICES INSTRUCTORS / LECTURES Lecture Section Instructors/Lectures Office L01 Prof. Ofer Levi RS408 ofer.levi@utoronto.ca (Coordinator) Mon 1 pm - 2 PM BA1160 Tue 2 pm - 3 PM GB120 W. 6 pm - 7 PM GB120 RECOMMENDED COURSE TEXT Semiconductor Physics and Devices, D. A. Neaman, 4 th ition, McGraw-Hill COURSE REQUIREMENTS/EVALUATION Quizzes (5) 15% (Bi-Weekly; 5 total, no petitions, no exceptions; No aids except non-programmable calculators; complete formula sheet provid with the quiz) Term Tests (2) 20% (No aids except non-programmable calculators; a complete formula sheet will be provid with the term tests; no make-up term test(s)) Term Test 1: TBD day, date 6-7pm Term Test 2: TBD day, date 6-7pm Projects (3) 15% (Semiconductor device simulations using Crosslight) Each project is submitt jointly by a pair of students. Final Examination 50% (Type A No aids allow except non-programmable calculators; a complete formula sheet will be provid with the exam) OTHER BASIC AND ADVANCED REFERENCES 1. B.G. Streetman, S. Banerjee, Solid State Electronic Devices, Prentice Hall (2000). 2. R.S. Muller, T.I. Kamins, M. Chan, Device Electronics for Integrat Circuits, 3 rd, John Wiley (2003). 3. S. Dimitrijev, Understanding Semiconductor Devices, Oxford (2000). 4. Solid State Physics for Engineering and Materials Science, J.P. McKelvey, Krieger, Fundamentals of Semiconductor Theory and Device Physics, S. Wang, Prentice-Hall, Principles of Electronic Materials and Devices, S. O. Kasap,, McGraw-Hill, Solid State and Semiconductor Physics, J.P. McKelvey, Harper, Solid State Physics, N.W. Ashcroft, N.D. Mermin, Saunders, Advanc Semiconductor Fundamentals, R.F Pierret, 2nd Ed., Prentice-Hall, Physical Properties of Semiconductors, C.M. Wolfe, N. Holonyak Jr., G.E. Stillman, Prentice-Hall, Semiconductor Physics, K. Seeger, Springer-Verlag. 12. Fundamentals of Semiconductors-Physics and Material Properties, P.Y. Yu, M. Cardona, Springer-Verlag, TUTORIALS Tutorial attendance is absolutely essential for success in this course. Tutorials are held weekly. The eleven weekly quizzes will be typically held at the start of the second hour. The quiz marks will be post weekly and mark quizzes will be return weekly. Each student must attend his/her assign tutorial section without exception. Tutorial Day,Time Room Teaching Assistant 01 Fri, 4-6 pm GB404 Steven Rutlge steve.rutlge@mail.utoronto.ca 02 Tue, 10 am-12pm WB 342 Hui-Lin Hsu huilin.hsu@mail.utoronto.ca Projects Primary TA for projects James Hoffman james.hoffman@mail.utoronto.ca University of Toronto 1 of 2
6 ECE335F: ELECTRONIC DEVICES LECTURE, TUTORIAL/QUIZ, AND PROJECT SCHEDULE- tentative Week of: L01 Tutorial/Quiz Lectures Sept. 8-12, , 2, 3 No Tutorials Project/Term Test* Sept , 5, 6 Tutorials begin Sept , 8, 9 Sept. 29 Oct. 3 10, 11,12 Quiz 1 Oct. 6 - Oct , 14, 15 Project 1 Assign Oct Oct , 17 Quiz 2 Oct Oct , 19, 20 Term Test 1 Project 1 Due, 6pm Fri Oct. 2 Oct Oct , 22, 23 Quiz 3 Project 2 Assign Nov. 3 - Nov. 7 24, 25, 26 Project 2 Due, 6pm Fri Nov. 7th Nov Nov , 28, 29 Quiz 4 Project 3 Assign Nov Nov , 31, 32 Term Test 2 Nov. 24 Nov , 34, 35 Quiz 5 Dec. 1 Dec 3 36, 37, 38 No Regular Tutorials Special Practice Exam Tutorials: To-Be-Schul Project 3 Due, 6pm Dec. *All project reports must be submitt in the drop box mark ECE335F PROJECTS locat at TBD University of Toronto 2 of 2
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