Lecture 28 Field-Effect Transistors

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1 Lecture 8 Field-Effect Transistors

2 Field-Effect Transistors 1. Understand MOSFET operation.. Analyze basic FET amplifiers using the loadline technique. 3. Analyze bias circuits.

3 4. Use small-signal equialent circuits to analyze FET amplifiers. 5. Compute the performance parameters of seeral FET amplifier configurations. 7. Understand the basic operation of CMOS logic gates.

4 NMOS Transistor

5 NMOS Transistor

6 Operation in the Cutoff Region i D 0 for GS V to

7 Operation Slightly Aboe Cut-Off By applying a positie bias between the Gate (G) and the body (B), electrons are attracted to the gate to form a conducting n-type channel between the source and drain. The positie charge on the gate and the negatie charge in the channel form a capacitor where: C gate A ε d ε WL t ox

8 Operation Slightly Aboe Cut-Off The amount of negatie charge that accumulates in the channel is gien by: Q C gate ( GS V This amount of charge is able to moe a distance L from the source to the drain in a time τ gien by: to ) τ L elocity L μe L μ

9 Operation Slightly Aboe Cut-Off The initial current flow for low drain-source oltage is gien by: i charge in transit C Lt transit time ( V gate μεw ox ( GS L μ GS V to to ) ) Q τ

10 Operation Slightly Aboe Cut-Off W i με ( GS Vto ) Lt ox For small alues of, i D is proportional to. The deice behaes as a resistance whose alue depends on GS.

11 Operation in the Triode Region i D C [ ( ) ] GS to C W L KP

12 oundaryoperation in the Saturation Region i D GD GD GS i D ( ) V C GS to athetranstionintosaturati Vto athb GS C + V to GS V to one

13

14 Exercise 1.1 Consider an NMOS transistor haing V to V. What is the region of operation (triode, saturation, or cutoff) if: 1. GS 1V and 5V? Cutoff since GS <V to. GS 3V and 0.5V? Triode since GS >V to and < GS -V to 3. GS 3V and 6V? Saturation since GS >V to and > GS V to 4. GS 5V and 6V? Saturation since GS >V to and > GS -V to

15 Exercise 1. Suppose that we hae an NMOS transistor with KP 50μA/V, V to 1V, L μm and W 80μm. Sketch the drain characteristics for from 0 to 10V and GS 0, 1,, 3 and 4V. For GS 0 or 1V, the transistor is cutoff and the drain current is zero. In the saturation region: C I D KP C( W L GS V to 1 (50x10 ) 6 80 ) 1ma / V The boundary between the triode and saturation regions occurs when V GS to I D C 3 4 GS ( V ) id ( ma)

16 Exercise 1.

17 PMOS Transistor p+ p+ n

18 MOSFET Summary

19 Exercise 1.3 Suppose that we hae an PMOS transistor with KP 5μA/V, V to -1V, L μm and W 00μm. Sketch the drain characteristics for from 0 to -10V and GS 0, -1, -, -3 and -4V. For GS 0 or -1V, the transistor is cutoff and the drain current is zero. In the saturation region: C I D KP C( W L GS V to 1 (5x10 ) 6 ) ma / V The boundary between the triode and saturation regions occurs when V GS to I D C GS 3 4 ( V ) i D ( ma)

20 Exercise 1.3

21 Load-Line Analysis of a Simple NMOS Circuit R i + DD D D ( t) ( t)

22 Load-Line Analysis of a Simple NMOS Circuit To establish the load line, we first locate two points on it: DD R D i D ( t) + ( t) For DD 0V and R D 1kΩ 0V i D 1kΩi 0 0 D i D () t + () t 0V 0V 1kΩ 0mA

23 Load-Line Analysis of a Simple NMOS Circuit

24 Load-Line Analysis of a Simple NMOS Circuit The quiescent operating point (Q point) is found for in 0V GS ( t) in 4V ( t) + 4V for in 0V

25 Load-Line Analysis of a Simple NMOS Circuit The maximum gate-to-source oltage is found for in 1V GS ( t) in 5V ( t) + 4V for in 1V

26 Load-Line Analysis of a Simple NMOS Circuit The minimum gate-to-source oltage is found for in -1V GS ( t) in 3V ( t) + 4V for in 1V

27 Load-Line Analysis of a Simple NMOS Circuit

28 Peak to peak swing of GS is V 1 Peak to peak swing of is 1V A"V " 6

29 The output is not proportional to the input. The output goes down by 7V for a change of +1V on the input. The output goes up by 5V for a change of -1V on the input. The output is said to be distorted. This is due to the uneen spacing of the characteristic cures. Q 11V -7V +5V

30 Load-Line Analysis of a Simple NMOS Circuit Uneen spacing of the drain characteristics

31 Exercise 1.4 Find Q, min and max if the circuit alues are changed to V DD 15V, V GG 3V: 15V GS ( t) 3V in 3V V for 4V ( t) + 3V for for in in in 0V -1V + 1V

32 Exercise 1.4 To establish the load line, we first locate two points on it: DD R D i D ( t) + ( t) For DD 15V and R D 1kΩ 15V i D 1kΩi 0 0 D i D () t + () t 15V 15V 15mA 1kΩ

33 Exercise 1.4 GS Q GS GS min max 3V for V for 4V for in in in 0V -1V + 1V Q 11V min 6V max 14V

34 FET Logic

35 CMOS Inerter

36 Two-Input CMOS NAND Gate

37 Two-Input CMOS NOR Gate

38

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