Step 1. Finding V M. Goal: Þnd V M = input voltage for the output = V M both transistors are saturated at V IN = V M since

Size: px
Start display at page:

Download "Step 1. Finding V M. Goal: Þnd V M = input voltage for the output = V M both transistors are saturated at V IN = V M since"

Transcription

1 Step 1. Finding V M Goal: Þnd V M = input voltage for the output = V M both transistors are saturated at V IN = V M since V DSn = V M - 0 > V M - V Tn V SDp = V DD - V M = (V DD - V M ) V Tp Equate drain currents, omitting the channel length modulation terms (1 λ n V DSn ) and (1 λ p V SDp ) since they tend to cancel out (if λ n = λ p, they exactly cancel out) I Dn = µ n C ox ( 2L V M Ð V Tn) 2 n Ð I Dp = µ p C ox ( 2L p V DD Ð V M V Tp) 2 Letting k n = µ n C ox (/L) n and k p = µ p C ox (/L) p k 2 n ( V M Ð V Tn ) 2 = k p ( V DD Ð V M V Tp ) 2

2 Finding V M (cont.) Result: V M = k p V Tn ( V k DD V Tp ) n k p k n e can set V M = V DD / 2 and achieve a symmetrical transfer curve Example: suppose V Tn = - V Tp = 1 V and V DD = 5 V k p k n V M = = 2.5 k p k n V --> k p = k n which makes sense since the transistors must have identical characteristics for the transfer curve to be symmetrical. The mobility of holes in p-channels is about half that of electrons in n-channels, µ p = µ n / 2, which implies that we must adjust the width-length ratios to compensate: k n = k p --> (/L) p = 2(/L) n

3 Step 2. Finding A v s2 v sg2 g mp v sg2 r op _ g1 = g2 d1=d2 v out v in _ v gs1 _ g mn v gs1 r on s1 e note that v sg2 = - v in and can simplify the small-signal circuit v in v g mn v r on r op g mp v v out

4 Approximate Transfer Curve The small-signal gain (which is the slope of the transfer curve when the input is equal to the mid-point voltage) is: v out v in = Ð( g mn g mp )( r on r op ) = A v CMOS inverters have a channel length that is as short as possible (to minimize the area... and maximum the density)... the output resistances are relatively small and a typical value is v out / v in = - 5 to * The input-low and input-high voltages are: V OUT V OH = V DD A v V DD V M A v V OL = 0 V V IL V M V IH V IN V IL = V M Ð ( V DD ( 2 A v )) V IH = V M ( V DD ( 2 A v ))

5 Noise Margins For k N = k P, the mid-point voltage is V M = 2.5 V. For a slope A v = - 5, the inputlow voltage and input-high voltages are: V IL = 2.5 V - (1/5) (2.5 V) = 2 V V IH = 2.5 V (1/5) (2.5 V) =3 V The low and high noise margins are therefore: N ML = V IL - V OL = 2-0 = 2 V N MH = V OH - V IH =5-3 = 2 V The transition region (or Ògray areaó) is the interval V IL < V IN < V IH or 2 V < V IN < 3 V Finding the actual transfer function requires solving the drain current equations when the p-channel and n-channel are in the appropriate operating regions... and Þnding the transition voltages for the regions. SPICE is good at this job!

6 CMOS Inverter: Propagation Delay The propagation delays t PHL and t PLH are obviously of major importance for digital circuit design... Example: clock frequency = 250 MHz --> clock period = 4 ns complex systems (e.g., microprocessor) have around propagation delays per clock period, so we need to have t PLH and t PHL < 100 ps = s Hand calculation of propagation delays: use approximation that input changes instantaneously V IN V OH t CYCLE V OL t V OUT t PHL t PLH VOH V OH V OL 50% t CYCLE t

7 Estimating the Load Capacitance The load capacitance C L consists of C G, the input capacitances of the inverters 2 and 3, and C P, the parasitic capacitance to the substrate from the drain regions of inverter 1 and the interconnections between the output of inverter 1 and the inputs of inverters 2 and 3. V DD L p2 V DD V DD 2 L n2 L p1 V IN V IN 1 V DD C L V OUT L n1 3 L p3 L n3 (a) (b) For hand calculation, we do a worst case estimate of C G by adding the maximum gate capacitances for inverters 2 and 3 C G = C ox [( L) p2 ( L) ( L) n2 p3 ( L) ] n3

8 Parasitic Capacitance from Drain Depletion Regions The drain n and p regions have depletion regions whose stored charge changes during the transient. Take the worst case and use the zero-bias depletion capacitance (the maximum, value) as a linear charge-storage element during the transient. active area (thin oxide area) gate contact gate polysilicon gate interconnect contact n polysilicon gate metal interconnect,,,,,,,,,,,,,,,,,, A, source contacts source interconnect L (b) L drain interconnect,,,, bulk contact drain contacts edge of active area L diff

9 Calculation of Parasitic Depletion Capacitance ÒBottomÓ of depletion regions of the load invertersõ drain diffusions contribute a depletion capacitance C BOTT = C Jn ( n L diffn ) C Jp ( p L diffp ) with C Jn and C Jp being the zero-bias junction capacitances (ff/µm 2 ) for the n- channel MOSFET drain-bulk junction and the p-channel MOSFET drain-bulk junction, respectively. ÒSidewallÓ of depletion regions of the load invertersõ drain diffusions make an additional contribution: C S = ( n 2L diffn )C JSn ( p 2L diffp )C JSp with C JSn and C JSp being the zero-bias sidewall capacitances (ff/µm) for the n-channel MOSFET drain-bulk junction and the p-channel MOSFET drain-bulk junction, respectively. The total depletion capacitance C DB = C BOTT C S Typical numbers: C JN and C JP are about 0.2 ff/µm 2 and C JSn and C JSp are about 0.5 ff/µm.

10 Parasitic Capacitance from Interconnections ÒiresÓ consist of metal lines connecting the output of the inverter to the input of the next stage. In cross section, polysilicon gate,, metal interconnect (width m, length L m ),,,, 0.6 µm deposited oxide 0.5 µm thermal oxide p p (grounded) gate oxide The p layer (i.e., heavily doped with acceptors) under the thick thermal oxide (500 nm = 0.5 µm) and deposited oxide (600 nm = 0.6 µm) depletes only slightly when positive voltages appear on the metal line, so the capacitance is approximately the oxide capacitance: C IRE = C thickox ( m L m ) where the oxide thickness = 500 nm 600 nm = 1.1 µm. * For large digital systems, the parasitic interconnect capacitance can dominate the load capacitance -- C L = C G C P = C G (C DB C IRE )

High-to-Low Propagation Delay t PHL

High-to-Low Propagation Delay t PHL High-to-Low Propagation Delay t PHL V IN switches instantly from low to high. Driver transistor (n-channel) immediately switches from cutoff to saturation; the p-channel pull-up switches from triode to

More information

Lecture 14 - Digital Circuits (III) CMOS. April 1, 2003

Lecture 14 - Digital Circuits (III) CMOS. April 1, 2003 6.12 - Microelectronic Devices and Circuits - Spring 23 Lecture 14-1 Lecture 14 - Digital Circuits (III) CMOS April 1, 23 Contents: 1. Complementary MOS (CMOS) inverter: introduction 2. CMOS inverter:

More information

ECE 438: Digital Integrated Circuits Assignment #4 Solution The Inverter

ECE 438: Digital Integrated Circuits Assignment #4 Solution The Inverter ECE 438: Digital Integrated Circuits Assignment #4 The Inverter Text: Chapter 5, Digital Integrated Circuits 2 nd Ed, Rabaey 1) Consider the CMOS inverter circuit in Figure P1 with the following parameters.

More information

The Physical Structure (NMOS)

The Physical Structure (NMOS) The Physical Structure (NMOS) Al SiO2 Field Oxide Gate oxide S n+ Polysilicon Gate Al SiO2 SiO2 D n+ L channel P Substrate Field Oxide contact Metal (S) n+ (G) L W n+ (D) Poly 1 Transistor Resistance Two

More information

VLSI Design and Simulation

VLSI Design and Simulation VLSI Design and Simulation Performance Characterization Topics Performance Characterization Resistance Estimation Capacitance Estimation Inductance Estimation Performance Characterization Inverter Voltage

More information

MOS Transistor Theory

MOS Transistor Theory MOS Transistor Theory So far, we have viewed a MOS transistor as an ideal switch (digital operation) Reality: less than ideal EE 261 Krish Chakrabarty 1 Introduction So far, we have treated transistors

More information

Lecture 12 Digital Circuits (II) MOS INVERTER CIRCUITS

Lecture 12 Digital Circuits (II) MOS INVERTER CIRCUITS Lecture 12 Digital Circuits (II) MOS INVERTER CIRCUITS Outline NMOS inverter with resistor pull-up The inverter NMOS inverter with current-source pull-up Complementary MOS (CMOS) inverter Static analysis

More information

2007 Fall: Electronic Circuits 2 CHAPTER 10. Deog-Kyoon Jeong School of Electrical Engineering

2007 Fall: Electronic Circuits 2 CHAPTER 10. Deog-Kyoon Jeong School of Electrical Engineering 007 Fall: Electronic Circuits CHAPTER 10 Digital CMOS Logic Circuits Deog-Kyoon Jeong dkjeong@snu.ac.kr k School of Electrical Engineering Seoul lnational luniversity it Introduction In this chapter, we

More information

CMPEN 411 VLSI Digital Circuits. Lecture 04: CMOS Inverter (static view)

CMPEN 411 VLSI Digital Circuits. Lecture 04: CMOS Inverter (static view) CMPEN 411 VLSI Digital Circuits Lecture 04: CMOS Inverter (static view) Kyusun Choi [Adapted from Rabaey s Digital Integrated Circuits, Second Edition, 2003 J. Rabaey, A. Chandrakasan, B. Nikolic] CMPEN

More information

ECE 546 Lecture 10 MOS Transistors

ECE 546 Lecture 10 MOS Transistors ECE 546 Lecture 10 MOS Transistors Spring 2018 Jose E. Schutt-Aine Electrical & Computer Engineering University of Illinois jesa@illinois.edu NMOS Transistor NMOS Transistor N-Channel MOSFET Built on p-type

More information

CMOS INVERTER. Last Lecture. Metrics for qualifying digital circuits. »Cost» Reliability» Speed (delay)»performance

CMOS INVERTER. Last Lecture. Metrics for qualifying digital circuits. »Cost» Reliability» Speed (delay)»performance CMOS INVERTER Last Lecture Metrics for qualifying digital circuits»cost» Reliability» Speed (delay)»performance 1 Today s lecture The CMOS inverter at a glance An MOS transistor model for manual analysis

More information

THE INVERTER. Inverter

THE INVERTER. Inverter THE INVERTER DIGITAL GATES Fundamental Parameters Functionality Reliability, Robustness Area Performance» Speed (delay)» Power Consumption» Energy Noise in Digital Integrated Circuits v(t) V DD i(t) (a)

More information

Fig. 1 CMOS Transistor Circuits (a) Inverter Out = NOT In, (b) NOR-gate C = NOT (A or B)

Fig. 1 CMOS Transistor Circuits (a) Inverter Out = NOT In, (b) NOR-gate C = NOT (A or B) 1 Introduction to Transistor-Level Logic Circuits 1 By Prawat Nagvajara At the transistor level of logic circuits, transistors operate as switches with the logic variables controlling the open or closed

More information

ECE 342 Electronic Circuits. Lecture 35 CMOS Delay Model

ECE 342 Electronic Circuits. Lecture 35 CMOS Delay Model ECE 34 Electronic Circuits Lecture 35 CMOS Delay Model Jose E. Schutt-Aine Electrical & Computer Engineering University of Illinois jesa@illinois.edu ECE 34 Jose Schutt Aine 1 Digital Circuits V IH : Input

More information

Lecture 12 Circuits numériques (II)

Lecture 12 Circuits numériques (II) Lecture 12 Circuits numériques (II) Circuits inverseurs MOS Outline NMOS inverter with resistor pull-up The inverter NMOS inverter with current-source pull-up Complementary MOS (CMOS) inverter Static analysis

More information

ECE 342 Solid State Devices & Circuits 4. CMOS

ECE 342 Solid State Devices & Circuits 4. CMOS ECE 34 Solid State Devices & Circuits 4. CMOS Jose E. Schutt-Aine Electrical & Computer Engineering University of Illinois jschutt@emlab.uiuc.edu ECE 34 Jose Schutt Aine 1 Digital Circuits V IH : Input

More information

ENGR890 Digital VLSI Design Fall Lecture 4: CMOS Inverter (static view)

ENGR890 Digital VLSI Design Fall Lecture 4: CMOS Inverter (static view) ENGR89 Digital VLSI Design Fall 5 Lecture 4: CMOS Inverter (static view) [Adapted from Chapter 5 of Digital Integrated Circuits, 3, J. Rabaey et al.] [Also borrowed from Vijay Narayanan and Mary Jane Irwin]

More information

CMOS Logic Gates. University of Connecticut 181

CMOS Logic Gates. University of Connecticut 181 CMOS Logic Gates University of Connecticut 181 Basic CMOS Inverter Operation V IN P O N O p-channel enhancementtype MOSFET; V T < 0 n-channel enhancementtype MOSFET; V T > 0 If V IN 0, N O is cut off and

More information

The Devices. Digital Integrated Circuits A Design Perspective. Jan M. Rabaey Anantha Chandrakasan Borivoje Nikolic. July 30, 2002

The Devices. Digital Integrated Circuits A Design Perspective. Jan M. Rabaey Anantha Chandrakasan Borivoje Nikolic. July 30, 2002 Digital Integrated Circuits A Design Perspective Jan M. Rabaey Anantha Chandrakasan Borivoje Nikolic The Devices July 30, 2002 Goal of this chapter Present intuitive understanding of device operation Introduction

More information

CMOS Inverter (static view)

CMOS Inverter (static view) Review: Design Abstraction Levels SYSTEM CMOS Inverter (static view) + MODULE GATE [Adapted from Chapter 5. 5.3 CIRCUIT of G DEVICE Rabaey s Digital Integrated Circuits,, J. Rabaey et al.] S D Review:

More information

EE115C Winter 2017 Digital Electronic Circuits. Lecture 3: MOS RC Model, CMOS Manufacturing

EE115C Winter 2017 Digital Electronic Circuits. Lecture 3: MOS RC Model, CMOS Manufacturing EE115C Winter 2017 Digital Electronic Circuits Lecture 3: MOS RC Model, CMOS Manufacturing Agenda MOS Transistor: RC Model (pp. 104-113) S R on D CMOS Manufacturing Process (pp. 36-46) S S C GS G G C GD

More information

EEC 116 Lecture #3: CMOS Inverters MOS Scaling. Rajeevan Amirtharajah University of California, Davis Jeff Parkhurst Intel Corporation

EEC 116 Lecture #3: CMOS Inverters MOS Scaling. Rajeevan Amirtharajah University of California, Davis Jeff Parkhurst Intel Corporation EEC 116 Lecture #3: CMOS Inverters MOS Scaling Rajeevan Amirtharajah University of California, Davis Jeff Parhurst Intel Corporation Outline Review: Inverter Transfer Characteristics Lecture 3: Noise Margins,

More information

P. R. Nelson 1 ECE418 - VLSI. Midterm Exam. Solutions

P. R. Nelson 1 ECE418 - VLSI. Midterm Exam. Solutions P. R. Nelson 1 ECE418 - VLSI Midterm Exam Solutions 1. (8 points) Draw the cross-section view for A-A. The cross-section view is as shown below.. ( points) Can you tell which of the metal1 regions is the

More information

Lecture 5: DC & Transient Response

Lecture 5: DC & Transient Response Lecture 5: DC & Transient Response Outline q Pass Transistors q DC Response q Logic Levels and Noise Margins q Transient Response q RC Delay Models q Delay Estimation 2 Activity 1) If the width of a transistor

More information

CMOS Logic Gates. University of Connecticut 172

CMOS Logic Gates. University of Connecticut 172 CMOS Logic Gates University of Connecticut 172 Basic CMOS Inverter Operation V IN P O N O p-channel enhancementtype MOSFET; V T < 0 n-channel enhancementtype MOSFET; V T > 0 If V IN 0, N O is cut off and

More information

Lecture 13 - Digital Circuits (II) MOS Inverter Circuits. March 20, 2003

Lecture 13 - Digital Circuits (II) MOS Inverter Circuits. March 20, 2003 6.012 Microelectronic Devices and Circuits Spring 2003 Lecture 131 Lecture 13 Digital Circuits (II) MOS Inverter Circuits March 20, 2003 Contents: 1. NMOS inverter with resistor pullup (cont.) 2. NMOS

More information

Today s lecture. EE141- Spring 2003 Lecture 4. Design Rules CMOS Inverter MOS Transistor Model

Today s lecture. EE141- Spring 2003 Lecture 4. Design Rules CMOS Inverter MOS Transistor Model - Spring 003 Lecture 4 Design Rules CMOS Inverter MOS Transistor Model Today s lecture Design Rules The CMOS inverter at a glance An MOS transistor model for manual analysis Important! Labs start next

More information

MOS Transistor Theory

MOS Transistor Theory CHAPTER 3 MOS Transistor Theory Outline 2 1. Introduction 2. Ideal I-V Characteristics 3. Nonideal I-V Effects 4. C-V Characteristics 5. DC Transfer Characteristics 6. Switch-level RC Delay Models MOS

More information

MOS Transistor I-V Characteristics and Parasitics

MOS Transistor I-V Characteristics and Parasitics ECEN454 Digital Integrated Circuit Design MOS Transistor I-V Characteristics and Parasitics ECEN 454 Facts about Transistors So far, we have treated transistors as ideal switches An ON transistor passes

More information

Lecture 5: DC & Transient Response

Lecture 5: DC & Transient Response Lecture 5: DC & Transient Response Outline Pass Transistors DC Response Logic Levels and Noise Margins Transient Response RC Delay Models Delay Estimation 2 Pass Transistors We have assumed source is grounded

More information

5.0 CMOS Inverter. W.Kucewicz VLSICirciuit Design 1

5.0 CMOS Inverter. W.Kucewicz VLSICirciuit Design 1 5.0 CMOS Inverter W.Kucewicz VLSICirciuit Design 1 Properties Switching Threshold Dynamic Behaviour Capacitance Propagation Delay nmos/pmos Ratio Power Consumption Contents W.Kucewicz VLSICirciuit Design

More information

Digital Integrated Circuits A Design Perspective. Jan M. Rabaey Anantha Chandrakasan Borivoje Nikolic. The Devices. July 30, Devices.

Digital Integrated Circuits A Design Perspective. Jan M. Rabaey Anantha Chandrakasan Borivoje Nikolic. The Devices. July 30, Devices. Digital Integrated Circuits A Design Perspective Jan M. Rabaey Anantha Chandrakasan Borivoje Nikolic The July 30, 2002 1 Goal of this chapter Present intuitive understanding of device operation Introduction

More information

Lecture 4: CMOS Transistor Theory

Lecture 4: CMOS Transistor Theory Introduction to CMOS VLSI Design Lecture 4: CMOS Transistor Theory David Harris, Harvey Mudd College Kartik Mohanram and Steven Levitan University of Pittsburgh Outline q Introduction q MOS Capacitor q

More information

DC and Transient Responses (i.e. delay) (some comments on power too!)

DC and Transient Responses (i.e. delay) (some comments on power too!) DC and Transient Responses (i.e. delay) (some comments on power too!) Michael Niemier (Some slides based on lecture notes by David Harris) 1 Lecture 02 - CMOS Transistor Theory & the Effects of Scaling

More information

Fundamentals of the Metal Oxide Semiconductor Field-Effect Transistor

Fundamentals of the Metal Oxide Semiconductor Field-Effect Transistor Triode Working FET Fundamentals of the Metal Oxide Semiconductor Field-Effect Transistor The characteristics of energy bands as a function of applied voltage. Surface inversion. The expression for the

More information

The CMOS Inverter: A First Glance

The CMOS Inverter: A First Glance The CMOS Inverter: A First Glance V DD S D V in V out C L D S CMOS Inverter N Well V DD V DD PMOS 2λ PMOS Contacts In Out In Out Metal 1 NMOS Polysilicon NMOS GND CMOS Inverter: Steady State Response V

More information

4.10 The CMOS Digital Logic Inverter

4.10 The CMOS Digital Logic Inverter 11/11/2004 section 4_10 The CMOS Digital Inverter blank.doc 1/1 4.10 The CMOS Digital Logic Inverter Reading Assignment: pp. 336346 Complementary MOSFET (CMOS) is the predominant technology for constructing

More information

Lecture 210 Physical Aspects of ICs (12/15/01) Page 210-1

Lecture 210 Physical Aspects of ICs (12/15/01) Page 210-1 Lecture 210 Physical Aspects of ICs (12/15/01) Page 210-1 LECTURE 210 PHYSICAL ASPECTS OF ICs (READING: Text-Sec. 2.5, 2.6, 2.8) INTRODUCTION Objective Illustrate the physical aspects of integrated circuits

More information

DC and Transient. Courtesy of Dr. Daehyun Dr. Dr. Shmuel and Dr.

DC and Transient. Courtesy of Dr. Daehyun Dr. Dr. Shmuel and Dr. DC and Transient Courtesy of Dr. Daehyun Lim@WSU, Dr. Harris@HMC, Dr. Shmuel Wimer@BIU and Dr. Choi@PSU http://csce.uark.edu +1 (479) 575-604 yrpeng@uark.edu Pass Transistors We have assumed source is

More information

CHAPTER 15 CMOS DIGITAL LOGIC CIRCUITS

CHAPTER 15 CMOS DIGITAL LOGIC CIRCUITS CHAPTER 5 CMOS DIGITAL LOGIC CIRCUITS Chapter Outline 5. CMOS Logic Gate Circuits 5. Digital Logic Inverters 5.3 The CMOS Inverter 5.4 Dynamic Operation of the CMOS Inverter 5.5 Transistor Sizing 5.6 Power

More information

Charge Storage in the MOS Structure. The Inverted MOS Capacitor (V GB > V Tn )

Charge Storage in the MOS Structure. The Inverted MOS Capacitor (V GB > V Tn ) The Inverted MO Capacitor (V > V Tn ) We consider the surface potential as Þxed (ÒpinnedÓ) at φ s,max = - φ p φ(x).5 V. V V ox Charge torage in the MO tructure Three regions of operation: Accumulation:

More information

Device Models (PN Diode, MOSFET )

Device Models (PN Diode, MOSFET ) Device Models (PN Diode, MOSFET ) Instructor: Steven P. Levitan steve@ece.pitt.edu TA: Gayatri Mehta, José Martínez Book: Digital Integrated Circuits: A Design Perspective; Jan Rabaey Lab Notes: Handed

More information

Quantitative MOSFET. Step 1. Connect the MOS capacitor results for the electron charge in the inversion layer Q N to the drain current.

Quantitative MOSFET. Step 1. Connect the MOS capacitor results for the electron charge in the inversion layer Q N to the drain current. Quantitative MOSFET Step 1. Connect the MOS capacitor results for the electron charge in the inversion layer Q N to the drain current. V DS _ n source polysilicon gate y = y * 0 x metal interconnect to

More information

EEE 421 VLSI Circuits

EEE 421 VLSI Circuits EEE 421 CMOS Properties Full rail-to-rail swing high noise margins» Logic levels not dependent upon the relative device sizes transistors can be minimum size ratioless Always a path to V dd or GND in steady

More information

MOSFET and CMOS Gate. Copy Right by Wentai Liu

MOSFET and CMOS Gate. Copy Right by Wentai Liu MOSFET and CMOS Gate CMOS Inverter DC Analysis - Voltage Transfer Curve (VTC) Find (1) (2) (3) (4) (5) (6) V OH min, V V OL min, V V IH min, V V IL min, V OHmax OLmax IHmax ILmax NM L = V ILmax V OL max

More information

Device Models (PN Diode, MOSFET )

Device Models (PN Diode, MOSFET ) Device Models (PN Diode, MOSFET ) Instructor: Steven P. Levitan steve@ece.pitt.edu TA: Gayatri Mehta, José Martínez Book: Digital Integrated Circuits: A Design Perspective; Jan Rabaey Lab Notes: Handed

More information

EE105 Fall 2014 Microelectronic Devices and Circuits. NMOS Transistor Capacitances: Saturation Region

EE105 Fall 2014 Microelectronic Devices and Circuits. NMOS Transistor Capacitances: Saturation Region EE105 Fall 014 Microelectronic Devices and Circuits Prof. Ming C. Wu wu@eecs.berkeley.edu 511 Sutardja Dai Hall (SDH) 1 NMOS Transistor Capacitances: Saturation Region Drain no longer connected to channel

More information

Lecture 4: DC & Transient Response

Lecture 4: DC & Transient Response Introduction to CMOS VLSI Design Lecture 4: DC & Transient Response David Harris Harvey Mudd College Spring 004 Outline DC Response Logic Levels and Noise Margins Transient Response Delay Estimation Slide

More information

MOSFET: Introduction

MOSFET: Introduction E&CE 437 Integrated VLSI Systems MOS Transistor 1 of 30 MOSFET: Introduction Metal oxide semiconductor field effect transistor (MOSFET) or MOS is widely used for implementing digital designs Its major

More information

5. CMOS Gate Characteristics CS755

5. CMOS Gate Characteristics CS755 5. CMOS Gate Characteristics Last module: CMOS Transistor theory This module: DC Response Logic Levels and Noise Margins Transient Response Delay Estimation Transistor ehavior 1) If the width of a transistor

More information

Lecture 12 CMOS Delay & Transient Response

Lecture 12 CMOS Delay & Transient Response EE 471: Transport Phenomena in Solid State Devices Spring 2018 Lecture 12 CMOS Delay & Transient Response Bryan Ackland Department of Electrical and Computer Engineering Stevens Institute of Technology

More information

ECE 497 JS Lecture - 12 Device Technologies

ECE 497 JS Lecture - 12 Device Technologies ECE 497 JS Lecture - 12 Device Technologies Spring 2004 Jose E. Schutt-Aine Electrical & Computer Engineering University of Illinois jose@emlab.uiuc.edu 1 NMOS Transistor 2 ρ Source channel charge density

More information

ECE 342 Electronic Circuits. 3. MOS Transistors

ECE 342 Electronic Circuits. 3. MOS Transistors ECE 342 Electronic Circuits 3. MOS Transistors Jose E. Schutt-Aine Electrical & Computer Engineering University of Illinois jschutt@emlab.uiuc.edu 1 NMOS Transistor Typically L = 0.1 to 3 m, W = 0.2 to

More information

University of Pennsylvania Department of Electrical Engineering. ESE 570 Midterm Exam March 14, 2013 FORMULAS AND DATA

University of Pennsylvania Department of Electrical Engineering. ESE 570 Midterm Exam March 14, 2013 FORMULAS AND DATA University of Pennsylvania Department of Electrical Engineering ESE 570 Midterm Exam March 4, 03 FORMULAS AND DATA. PHYSICAL CONSTANTS: n i = intrinsic concentration undoped) silicon =.45 x 0 0 cm -3 @

More information

The CMOS Inverter: A First Glance

The CMOS Inverter: A First Glance The CMOS Inverter: A First Glance V DD V in V out C L CMOS Properties Full rail-to-rail swing Symmetrical VTC Propagation delay function of load capacitance and resistance of transistors No static power

More information

Lecture 6: DC & Transient Response

Lecture 6: DC & Transient Response Lecture 6: DC & Transient Response Slides courtesy of Deming Chen Slides based on the initial set from David Harris CMOS VLSI Design Outline Pass Transistors DC Response Logic Levels and Noise Margins

More information

The Devices. Jan M. Rabaey

The Devices. Jan M. Rabaey The Devices Jan M. Rabaey Goal of this chapter Present intuitive understanding of device operation Introduction of basic device equations Introduction of models for manual analysis Introduction of models

More information

Digital Integrated Circuits A Design Perspective

Digital Integrated Circuits A Design Perspective igital Integrated Circuits esign Perspective esigning Combinational Logic Circuits 1 Combinational vs. Sequential Logic In Combinational Logic Circuit Out In Combinational Logic Circuit Out State Combinational

More information

The Devices. Digital Integrated Circuits A Design Perspective. Jan M. Rabaey Anantha Chandrakasan Borivoje Nikolic. July 30, 2002

The Devices. Digital Integrated Circuits A Design Perspective. Jan M. Rabaey Anantha Chandrakasan Borivoje Nikolic. July 30, 2002 igital Integrated Circuits A esign Perspective Jan M. Rabaey Anantha Chandrakasan Borivoje Nikolic The evices July 30, 2002 Goal of this chapter Present intuitive understanding of device operation Introduction

More information

Announcements. EE141- Fall 2002 Lecture 7. MOS Capacitances Inverter Delay Power

Announcements. EE141- Fall 2002 Lecture 7. MOS Capacitances Inverter Delay Power - Fall 2002 Lecture 7 MOS Capacitances Inverter Delay Power Announcements Wednesday 12-3pm lab cancelled Lab 4 this week Homework 2 due today at 5pm Homework 3 posted tonight Today s lecture MOS capacitances

More information

EE5780 Advanced VLSI CAD

EE5780 Advanced VLSI CAD EE5780 Advanced VLSI CAD Lecture 4 DC and Transient Responses, Circuit Delays Zhuo Feng 4.1 Outline Pass Transistors DC Response Logic Levels and Noise Margins Transient Response RC Delay Models Delay

More information

Lecture 3: CMOS Transistor Theory

Lecture 3: CMOS Transistor Theory Lecture 3: CMOS Transistor Theory Outline Introduction MOS Capacitor nmos I-V Characteristics pmos I-V Characteristics Gate and Diffusion Capacitance 2 Introduction So far, we have treated transistors

More information

ENEE 359a Digital VLSI Design

ENEE 359a Digital VLSI Design SLIDE 1 ENEE 359a Digital VLSI Design & Logical Effort Prof. blj@ece.umd.edu Credit where credit is due: Slides contain original artwork ( Jacob 2004) as well as material taken liberally from Irwin & Vijay

More information

9/18/2008 GMU, ECE 680 Physical VLSI Design

9/18/2008 GMU, ECE 680 Physical VLSI Design ECE680: Physical VLSI Design Chapter III CMOS Device, Inverter, Combinational circuit Logic and Layout Part 3 Combinational Logic Gates (textbook chapter 6) 9/18/2008 GMU, ECE 680 Physical VLSI Design

More information

EEC 118 Lecture #2: MOSFET Structure and Basic Operation. Rajeevan Amirtharajah University of California, Davis Jeff Parkhurst Intel Corporation

EEC 118 Lecture #2: MOSFET Structure and Basic Operation. Rajeevan Amirtharajah University of California, Davis Jeff Parkhurst Intel Corporation EEC 118 Lecture #2: MOSFET Structure and Basic Operation Rajeevan Amirtharajah University of California, Davis Jeff Parkhurst Intel Corporation Announcements Lab 1 this week, report due next week Bring

More information

Properties of CMOS Gates Snapshot

Properties of CMOS Gates Snapshot MOS logic 1 Properties of MOS Gates Snapshot High noise margins: V OH and V OL are at V DD and GND, respectively. No static power consumption: There never exists a direct path between V DD and V SS (GND)

More information

ECE321 Electronics I

ECE321 Electronics I ECE31 Electronics Lecture 1: CMOS nverter: Noise Margin & Delay Model Payman Zarkesh-Ha Office: ECE Bldg. 30B Office hours: Tuesday :00-3:00PM or by appointment E-mail: payman@ece.unm.edu Slide: 1 CMOS

More information

MOS Transistor Properties Review

MOS Transistor Properties Review MOS Transistor Properties Review 1 VLSI Chip Manufacturing Process Photolithography: transfer of mask patterns to the chip Diffusion or ion implantation: selective doping of Si substrate Oxidation: SiO

More information

Check course home page periodically for announcements. Homework 2 is due TODAY by 5pm In 240 Cory

Check course home page periodically for announcements. Homework 2 is due TODAY by 5pm In 240 Cory EE141 Fall 005 Lecture 6 MOS Capacitances, Propagation elay Important! Check course home page periodically for announcements Homework is due TOAY by 5pm In 40 Cory Homework 3 will be posted TOAY ue Thursday

More information

Lecture 310 Open-Loop Comparators (3/28/10) Page 310-1

Lecture 310 Open-Loop Comparators (3/28/10) Page 310-1 Lecture 310 Open-Loop Comparators (3/28/10) Page 310-1 LECTURE 310 OPEN-LOOP COMPARATORS LECTURE ORGANIZATION Outline Characterization of comparators Dominant pole, open-loop comparators Two-pole, open-loop

More information

DC & Transient Responses

DC & Transient Responses ECEN454 Digital Integrated Circuit Design DC & Transient Responses ECEN 454 DC Response DC Response: vs. for a gate Ex: Inverter When = -> = When = -> = In between, depends on transistor size and current

More information

and V DS V GS V T (the saturation region) I DS = k 2 (V GS V T )2 (1+ V DS )

and V DS V GS V T (the saturation region) I DS = k 2 (V GS V T )2 (1+ V DS ) ECE 4420 Spring 2005 Page 1 FINAL EXAMINATION NAME SCORE /100 Problem 1O 2 3 4 5 6 7 Sum Points INSTRUCTIONS: This exam is closed book. You are permitted four sheets of notes (three of which are your sheets

More information

FIELD-EFFECT TRANSISTORS

FIELD-EFFECT TRANSISTORS FIEL-EFFECT TRANSISTORS 1 Semiconductor review 2 The MOS capacitor 2 The enhancement-type N-MOS transistor 3 I-V characteristics of enhancement MOSFETS 4 The output characteristic of the MOSFET in saturation

More information

CMOS Digital Integrated Circuits Lec 13 Semiconductor Memories

CMOS Digital Integrated Circuits Lec 13 Semiconductor Memories Lec 13 Semiconductor Memories 1 Semiconductor Memory Types Semiconductor Memories Read/Write (R/W) Memory or Random Access Memory (RAM) Read-Only Memory (ROM) Dynamic RAM (DRAM) Static RAM (SRAM) 1. Mask

More information

Introduction to CMOS VLSI. Chapter 2: CMOS Transistor Theory. Harris, 2004 Updated by Li Chen, Outline

Introduction to CMOS VLSI. Chapter 2: CMOS Transistor Theory. Harris, 2004 Updated by Li Chen, Outline Introduction to MOS VLSI Design hapter : MOS Transistor Theory copyright@david Harris, 004 Updated by Li hen, 010 Outline Introduction MOS apacitor nmos IV haracteristics pmos IV haracteristics Gate and

More information

Low Power VLSI Circuits and Systems Prof. Ajit Pal Department of Computer Science and Engineering Indian Institute of Technology, Kharagpur

Low Power VLSI Circuits and Systems Prof. Ajit Pal Department of Computer Science and Engineering Indian Institute of Technology, Kharagpur Low Power VLSI Circuits and Systems Prof. Ajit Pal Department of Computer Science and Engineering Indian Institute of Technology, Kharagpur Lecture No. # 08 MOS Inverters - III Hello, and welcome to today

More information

Electronic Devices and Circuits Lecture 16 - Digital Circuits: CMOS - Outline Announcements (= I ON V DD

Electronic Devices and Circuits Lecture 16 - Digital Circuits: CMOS - Outline Announcements (= I ON V DD 6.01 - Electronic Deices and Circuits Lecture 16 - Digital Circuits: CMOS - Outline Announcements Handout; Web posting - Lecture Outline and Summary; two readings Exam - Wednesday, No. 5, 7:30-9:30 pm,

More information

COMBINATIONAL LOGIC. Combinational Logic

COMBINATIONAL LOGIC. Combinational Logic COMINTIONL LOGIC Overview Static CMOS Conventional Static CMOS Logic Ratioed Logic Pass Transistor/Transmission Gate Logic Dynamic CMOS Logic Domino np-cmos Combinational vs. Sequential Logic In Logic

More information

The Inverter. Digital Integrated Circuits A Design Perspective. Jan M. Rabaey Anantha Chandrakasan Borivoje Nikolic

The Inverter. Digital Integrated Circuits A Design Perspective. Jan M. Rabaey Anantha Chandrakasan Borivoje Nikolic Digital Integrated Circuits A Design Perspective Jan M. Rabaey Anantha Chandrakasan Borivoje Nikolic The Inverter Revised from Digital Integrated Circuits, Jan M. Rabaey el, 2003 Propagation Delay CMOS

More information

CMPEN 411 VLSI Digital Circuits. Lecture 03: MOS Transistor

CMPEN 411 VLSI Digital Circuits. Lecture 03: MOS Transistor CMPEN 411 VLSI Digital Circuits Lecture 03: MOS Transistor Kyusun Choi [Adapted from Rabaey s Digital Integrated Circuits, Second Edition, 2003 J. Rabaey, A. Chandrakasan, B. Nikolic] CMPEN 411 L03 S.1

More information

Important! EE141- Fall 2002 Lecture 5. CMOS Inverter MOS Transistor Model

Important! EE141- Fall 2002 Lecture 5. CMOS Inverter MOS Transistor Model - Fall 00 Lecture 5 CMO Inverter MO Transistor Model Important! Lab 3 this week You must show up in one of the lab sessions this week If you don t show up you will be dropped from the class» Unless you

More information

Digital Integrated Circuits EECS 312

Digital Integrated Circuits EECS 312 14 12 10 8 6 Fujitsu VP2000 IBM 3090S Pulsar 4 IBM 3090 IBM RY6 CDC Cyber 205 IBM 4381 IBM RY4 2 IBM 3081 Apache Fujitsu M380 IBM 370 Merced IBM 360 IBM 3033 Vacuum Pentium II(DSIP) 0 1950 1960 1970 1980

More information

ECE 342 Electronic Circuits. Lecture 6 MOS Transistors

ECE 342 Electronic Circuits. Lecture 6 MOS Transistors ECE 342 Electronic Circuits Lecture 6 MOS Transistors Jose E. Schutt-Aine Electrical & Computer Engineering University of Illinois jesa@illinois.edu 1 NMOS Transistor Typically L = 0.1 to 3 m, W = 0.2

More information

ECE 6412, Spring Final Exam Page 1 FINAL EXAMINATION NAME SCORE /120

ECE 6412, Spring Final Exam Page 1 FINAL EXAMINATION NAME SCORE /120 ECE 6412, Spring 2002 Final Exam Page 1 FINAL EXAMINATION NAME SCORE /120 Problem 1O 2O 3 4 5 6 7 8 Score INSTRUCTIONS: This exam is closed book with four sheets of notes permitted. The exam consists of

More information

Lecture 5: CMOS Transistor Theory

Lecture 5: CMOS Transistor Theory Lecture 5: CMOS Transistor Theory Slides courtesy of Deming Chen Slides based on the initial set from David Harris CMOS VLSI Design Outline q q q q q q q Introduction MOS Capacitor nmos I-V Characteristics

More information

Integrated Circuits & Systems

Integrated Circuits & Systems Federal University of Santa Catarina Center for Technology Computer Science & Electronics Engineering Integrated Circuits & Systems INE 5442 Lecture 16 CMOS Combinational Circuits - 2 guntzel@inf.ufsc.br

More information

EEC 118 Lecture #6: CMOS Logic. Rajeevan Amirtharajah University of California, Davis Jeff Parkhurst Intel Corporation

EEC 118 Lecture #6: CMOS Logic. Rajeevan Amirtharajah University of California, Davis Jeff Parkhurst Intel Corporation EEC 118 Lecture #6: CMOS Logic Rajeevan mirtharajah University of California, Davis Jeff Parkhurst Intel Corporation nnouncements Quiz 1 today! Lab 2 reports due this week Lab 3 this week HW 3 due this

More information

Errata of K Introduction to VLSI Systems: A Logic, Circuit, and System Perspective

Errata of K Introduction to VLSI Systems: A Logic, Circuit, and System Perspective Errata of K13126 Introduction to VLSI Systems: A Logic, Circuit, and System Perspective Chapter 1. Page 8, Table 1-1) The 0.35-µm process parameters are from MOSIS, both 0.25-µm and 0.18-µm process parameters

More information

Name: Answers. Grade: Q1 Q2 Q3 Q4 Q5 Total. ESE370 Fall 2015

Name: Answers. Grade: Q1 Q2 Q3 Q4 Q5 Total. ESE370 Fall 2015 University of Pennsylvania Department of Electrical and System Engineering Circuit-Level Modeling, Design, and Optimization for Digital Systems ESE370, Fall 2015 Midterm 1 Monday, September 28 5 problems

More information

NTE4501 Integrated Circuit CMOS, Dual 4 Input NAND Gate, 2 Input NOR/OR Gate, 8 Input AND/NAND Gate

NTE4501 Integrated Circuit CMOS, Dual 4 Input NAND Gate, 2 Input NOR/OR Gate, 8 Input AND/NAND Gate NTE4501 Integrated Circuit CMOS, Dual 4 Input NAND Gate, 2 Input NOR/OR Gate, 8 Input AND/NAND Gate Description: The NTE4501 is a triple gate device in a 16 Lead DIP type package constructed with MOS P

More information

Topics to be Covered. capacitance inductance transmission lines

Topics to be Covered. capacitance inductance transmission lines Topics to be Covered Circuit Elements Switching Characteristics Power Dissipation Conductor Sizes Charge Sharing Design Margins Yield resistance capacitance inductance transmission lines Resistance of

More information

MOS Capacitors ECE 2204

MOS Capacitors ECE 2204 MOS apacitors EE 2204 Some lasses of Field Effect Transistors Metal-Oxide-Semiconductor Field Effect Transistor MOSFET, which will be the type that we will study in this course. Metal-Semiconductor Field

More information

The Devices: MOS Transistors

The Devices: MOS Transistors The Devices: MOS Transistors References: Semiconductor Device Fundamentals, R. F. Pierret, Addison-Wesley Digital Integrated Circuits: A Design Perspective, J. Rabaey et.al. Prentice Hall NMOS Transistor

More information

COMP 103. Lecture 16. Dynamic Logic

COMP 103. Lecture 16. Dynamic Logic COMP 03 Lecture 6 Dynamic Logic Reading: 6.3, 6.4 [ll lecture notes are adapted from Mary Jane Irwin, Penn State, which were adapted from Rabaey s Digital Integrated Circuits, 2002, J. Rabaey et al.] COMP03

More information

THE CMOS INVERTER CHAPTER. Quantification of integrity, performance, and energy metrics of an inverter Optimization of an inverter design

THE CMOS INVERTER CHAPTER. Quantification of integrity, performance, and energy metrics of an inverter Optimization of an inverter design chapter5.fm Page 176 Friday, January 18, 2002 9:01 M CHPTER 5 THE CMOS INVERTER Quantification of integrity, performance, and energy metrics of an inverter Optimization of an inverter design 5.1 Introduction

More information

ECE-343 Test 2: Mar 21, :00-8:00, Closed Book. Name : SOLUTION

ECE-343 Test 2: Mar 21, :00-8:00, Closed Book. Name : SOLUTION ECE-343 Test 2: Mar 21, 2012 6:00-8:00, Closed Book Name : SOLUTION 1. (25 pts) (a) Draw a circuit diagram for a differential amplifier designed under the following constraints: Use only BJTs. (You may

More information

EE 560 MOS TRANSISTOR THEORY PART 2. Kenneth R. Laker, University of Pennsylvania

EE 560 MOS TRANSISTOR THEORY PART 2. Kenneth R. Laker, University of Pennsylvania 1 EE 560 MOS TRANSISTOR THEORY PART nmos TRANSISTOR IN LINEAR REGION V S = 0 V G > V T0 channel SiO V D = small 4 C GC C BC substrate depletion region or bulk B p nmos TRANSISTOR AT EDGE OF SATURATION

More information

Integrated Circuits & Systems

Integrated Circuits & Systems Federal University of Santa Catarina Center for Technology Computer Science & Electronics Engineering Integrated Circuits & Systems INE 5442 Lecture 12 The CMOS Inverter: static behavior guntzel@inf.ufsc.br

More information

Digital Electronics Part II - Circuits

Digital Electronics Part II - Circuits Digital Electronics Part - Circuits Dr.. J. Wassell Gates from Transistors ntroduction Logic circuits are non-linear, consequently we will introduce a graphical technique for analysing such circuits The

More information

EE5311- Digital IC Design

EE5311- Digital IC Design EE5311- Digital IC Design Module 1 - The Transistor Janakiraman V Assistant Professor Department of Electrical Engineering Indian Institute of Technology Madras Chennai October 28, 2017 Janakiraman, IITM

More information