OPTI510R: Photonics. Khanh Kieu College of Optical Sciences, University of Arizona Meinel building R.626

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1 OPTI510R: Photonics Khanh Kieu College of Optical Sciences, University of Arizona Meinel building R.626

2 Announcements HW #6 is assigned, due April 23 rd Final exam May 2

3 Semiconductor Lasers Introduction p-n junction Lasers based on p-n junction Lasers based on heterostructure Semiconductor materials Fabrication Examples of semiconductor lasers and performance

4 Semiconductor Lasers Metal Insulator Semiconductor Valence band is completely full

5 Periodic Table Devised 1869 by Dmitri Mendeleev 118 confirmed elements as of 2011 Group II-VI semiconductor Group IV semiconductor # of proton Metal Group III-V semiconductor

6 Direct and indirect bandgaps Energy and momentum must be conserved Transition appear as vertical lines in dispersion diagram In indirect gap materials, phonon is needed for momentum conservation Low probability for light emission, 3 body process

7 Semiconductor doping Intrinsic (pure) semiconductor, n(si) ~ cm -3 Extrinsic (doped) semiconductor Control of resistivity of silicon by over 9 orders of magnitude by adding small amount of impurites or dopants p-type, majority carrier is hole n-type, majority carrier is electron Density of Si 5x10 22 cm -3 This is what makes everything possible! Transistors, semiconductor lasers, diode detectors, CCDs which lead to computer, internet, mp3 players, digital camera

8 The Nobel Prize in Physics 1956 "for their researches on semiconductors and their discovery of the transistor effect" William Bradford Shockley John Bardeen Walter Houser Brattain

9 The Nobel Prize in Physics 1956

10 p-n junction

11 p-n junction

12 Lasers based on p-n junction p + Junction n + E c E v E F p E g Ho les in V B Electro ns ev o Electro ns in C B E F n E c E c E g p + In version reg io n n + E c ev E F n E F p (a) E v (b) The energy band diagram of a degenerately doped p-n with no bias. (b) Band diagram with a sufficiently large forward bias to cause population inversion and hence stimulated emission S.O. Kasap, Optoelectronics (Prentice Hall) V

13 Lasers based on p-n junction January 1962: observations of super-lumenscences in GaAs p-n junctions (Ioffe Institute) Sept.-Dec. 1962: laser action in GaAs and GaAsP p-n junctions (General Electric, IBM, Lebedev Institute) Current Cleaved surface mirror p + L L GaAs Electrode n + GaAs Electrode Active region (stimulated emission region) A schematic illustration of a GaAs homojunction laser diode. The cleaved surfaces act as reflecting mirrors S.O. Kasap, Optoelectronics (Prentice Hall) Light intensity Wavelength

14 Lasers based on heterostructure p-n junction design requires cryogenic temperature to lase Large current density needed to create population inversion Solution: Double Heterostructure! (DHS) (a) (b) Electrons in CB E c E v 2 ev n AlGaAs p GaAs (~0.1 m) 1.4 ev Holes in VB AlGaAs E c p 2 ev E c E v (a) A double heterostructure diode has two junctions which are between two different bandgap semiconductors (GaAs and AlGaAs). (b) Simplified energy band diagram under a large forward bias. Lasing recombination takes place in the p- GaAs layer, the active layer Refractive index (c) Photon density (d) Active region n ~ 5% (c) Higher bandgap materials have a lower refractive index (d) AlGaAs layers provide lateral optical confinement S.O. Kasap, Optoelectronics (Prentice Hall)

15 Lasers based on heterostructure AlGaAs has Eg of 2 ev GaAs has Eg of 1.4 ev p-gaas is a thin layer ( um) and is the Active Layer where lasing recombination occurs. Both p regions are heavily doped and are degenerate within the VB. With an adequate forward bias, Ec of n-algaas moves above Ec of p-gaas which develops a large injection of electrons from the CB of n-algaas to the CB of p-gaas. These electrons are confined to the CB of the p-gaas due to the difference in barrier potential of the two materials.

16 Lasers based on heterostructure Two important advantages: 1. Due to the thin p-gaas layer a minimal amount of current is required to increase the concentration of injected carriers at a fast rate. This is how threshold current is reduced for the purpose of population inversion and optical gain. 2. A semiconductor with a wider bandgap (AlGaAs) will also have a lower refractive index than GaAs. This difference in refractive index is what establishes an optical dielectric waveguide that ultimately confines photons to the active region. Room temperature operation possible!

17 Lasers based on heterostructure Metal SiO 2 p + GaAs 3 µm p Al0.25Ga0.75As 3 µm p GaAs 0.5 µm p Al0.25Ga0.75As 3 µm n GaAs Metal Copper 250 µm 200 ma 120 µm Schematic representation of the DHS injection laser in the first CWoperation at room temperature Credit: Zhores I. Alferov

18 The Nobel Prize in Physics 2000 "for basic work on information and communication technology" for developing semiconductor heterostructures used in high-speed- and opto-electronics for his part in the invention of the integrated circuit Zhores I. Alferov b Herbert Kroemer b Jack S. Kilby

19 Heterostructure Tree (by I. Hayashi, 1985) Wavelength Division Multiplexity All Optical Link Laser Disk Laser Printer Optical Sensor High Power Electronics Phased Array LD Multi- Wavelength LD Detector Array LD LED Wide Band Optical Transition APD PIN PIN-FET LD-Driver One Chip Repeater Monolithic OEIC Switch MSI SSI Integration of Optical and Electronic Devices Integration of Optical Devices Integration Technology Device Technology LSI Integration of Bifunctional Devices Advanced LAN Bidirectional Video Network Optical Connection Between LSIs Optical Wiring Inside LSI FET HBT HEMT Super High Speed Computer GaAs IC One Chip Computer HS Solar Cell's Substrate Crystal Epitaxi Thin Film Process Technology Material Characterization

20 Semiconductor materials Useful for semiconductor lasers, modulators, and photodetectors Semiconductors allow fabrication of electrically active devices Semiconductors belonging to III-V group often used Two semiconductors with different refractive indices needed They must have different bandgaps but same lattice constant Nature does not provide such semiconductors.

21 Ternary and quaternary compounds A fraction of the lattice sites in a binary semiconductor (GaAs, InP, etc.) is replaced by other elements Ternary compound Al x Ga 1-x As is made by replacing a fraction x of Ga atoms by Al atoms Band-gap varies with x as: E g (x) = x (0 < x < 0.45) Quaternary compound In 1-x Ga x As y P 1-y useful in the wavelength range 1.1 to 1.6 µm For matching lattice constant to InP substrate, x/y = 0.45 Band-gap varies with y as: E g (y) = y+0.12y 2

22 Wavelength coverage

23 Blue light emitting diodes

24 Blue light emitting diodes

25 Impact of dimensionality on density of states P N 3D P N P N 2D 1D L x L z L z Density of states E gap E 0 E 1 Energy E 00 E 01 L z P N 0D L x L y E 000 E 001

26 Quantum dot: artificial atom photon conduction band electron levels phonon photon forbidden gaps valence band kt hole levels Atom Semiconductor Quantum dot

27 Impact of dimensionality on density of states Quantum well laser Quantum dot laser Homework: Quantum cascade lasers

28 LD, SLD, LED Superluminescent diodes (SLDs) are semiconductor laser diodes with strong current injection so that stimulated emission outweighs spontaneous emission. Output of SLD is generally greater than LED and lower than LD. Spectrum is narrower than LED and broader than LD. Application in sources with low coherent time, such as optical coherence tomography, fiber optic gyroscopes and fiber optic sensors

29 Liquid Phase Epitaxy of III V compounds H 2 Heater coils GaAs substrate GaAs source Solution Pull rod Quartz reactor 5 nm InAsGaP thin layer in InGaP/InGaAsP/InGaP/GaAs (111 A) structure with quantum well grown by LPE. TEM image of the structure. Credit: G. Khitrova s group

30 Molecular Beam Epitaxy (MBE) of III V compounds ion pump e-gun Riber 32P substrate unit ion gauge residual gas analyzer RHEED screen shutters Schematic view of MBE machine effusion cells MBE high purity of materials, in situ control, precision of structure growth in layer thickness and composition MESFET, HEMT QCL PD, LED, LD... Credit: G. Khitrova s group

31 Progress 10 5 J 2 th (A/cm ) A/cm2 (1970) 4.3 ka/cm2 (1968) Impact of Double Heterostructures 160 A/cm2 (1981) Impact of Quantum Wells 40 A/cm2 (1988) 19 A/cm2 (2000) Impact of Quantum Dots 10 Impact of SPSL QW 6 A/cm2 (2002) Years SPSL: short period superlattice Credit: Zhores I. Alferov

32 Progress high power diode array stacks Main problem: heat management Credit: Zhores I. Alferov

33 Distributed feed-back laser Single frequency operation Low noise performance Suitable for WDM networks

34 DFB laser

35 Vertical cavity surface emitting laser mirrors Optical cavity Low threshold currents (<1mA) Narrow emission lines (often single frequency operation). This is caused by the very short cavity length, which results in large longitudinal mode spacing Circular beam, efficient coupling into single mode optical fiber The possibility of fabricating 2 dimensional arrays of lasers (eg x10 3 diodes) on the same chip, with each laser individually addressable

36 Vertical external cavity surface emitting laser VECSELs

37 DFB laser with integrated modulator 10Gb/s module, Ith = 20mA, Pmax = extinction ratio = 15dB for -2.5V.

38 Pump laser diodes 980nm single mode pump laser (14-pin) Up to 750mW power range Air-cooled -20 to 75C operating temperature

39 Remaining challenges High power singlemode pump lasers UV semiconductor lasers Wavelength gaps coverage Ultrafast semiconductor lasers

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