Agilent EEsof EDA.

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1 Agilent EEsof EDA This document is owned by Agilent Technologies, but is no longer kept current and may contain obsolete or inaccurate references. We regret any inconvenience this may cause. For the latest information on Agilent s line of EEsof electronic design automation (EDA) products and services, please go to:

2 Impedance Matching Techniques for VLSI Packaging Page 1

3 Acknowledgement Author : Brock J. LaMeres, Ph.D. Co-Authors: Rajesh Garg Texas A&M University Kanupriya Gulati Texas A&M University Sunil P. Khatri, Ph.D Texas A&M University Page 2

4 Problem Statement Reflections from interconnect will limit VLSI system performance This is caused by : 1) Parasitics of the Package Interconnect 2) Faster Risetimes in Off-chip Driver Circuitry Page 3

5 Agenda 1) Package Interconnect Parasitics 2) Proposed Solution 3) Experimental Results Page 4

6 Why is packaging limiting performance? Transistor Technology is Outpacing Package Technology Page 5

7 Why is packaging limiting performance? Today s Package Interconnect Looks Inductive - Long interconnect paths - Large return loops - Φ L = I Wire Bond Inductance (~2.8nH) Page 6

8 Why is packaging limiting performance? Inductive Interconnect Leads to Reflections - Interconnect is not matched to system - Reflections occur due to interconnect ZL > 50Ω Z0 = 50Ω Γ= Z Z L L + Z Z 0 0 Page 7

9 Why is packaging limiting performance? Aggressive Package Design Helps, but is expensive - 95% of VLSI design-starts are wire bonded - Goal: Extend the life of wire bonded packages QFP Wire Bond : 4.5nH $0.22 / pin BGA Wire Bond : 3.7nH $0.34 / pin *** BGA Flip-Chip : 1.2nH $0.63 / pin Page 8

10 Why Now? Cost - Historically, the transistor delay has dominated performance. - Inexpensive packaging has met the electrical performance needs. Faster Risetimes - As transistors shrink, faster risetimes can be created. - Everything in the package becomes a transmission line. Impedance Matching - The impedance of the package is not matched to the system. - This leads to reflections from the inductive wire bond in the package Page 9

11 Current Solution to Reflections Live with the Signal Path Reflections 1) Run the signals slow enough so that reflections are small Γ= Z Z L L + Z Z 0 0 < 10% 2) Terminate Signals on the Mother board so that reflections are absorbed On Mother Board Termination Page 10

12 Limitations of Approach Current Solution to Reflections 1) Run the signals slow enough so that reflections are small Limits System Performance 2) Terminate Signals on the Mother board so that reflections are absorbed This only eliminates primary reflections, the second still exists Page 11

13 Proposed Solutions Impedance Compensation Add Capacitance Near Bond Wire to Reduce Impedance - Adding additional capacitance lowers the wire bond impedance - Impedance can be matched to system, reducing reflections Z WireBond = L C WireBond WireBond Add Capacitance to lower Z Page 12

Proposed Solutions Impedance Compensation If the capacitance is close to the wire bond, it will alter its impedance - Electrical lengths less than 20% of risetime

14 Proposed Solutions Impedance Compensation If the capacitance is close to the wire bond, it will alter its impedance - Electrical lengths less than 20% of risetime are treated as lumped elements - For modern dielectrics, anything within 0.15 of wire bond is lumped Treated as Lumped Element Treated as Distributed Element Page 13

15 Proposed Solutions Impedance Compensation Capacitance on the IC or Package is close enough to alter impedance Z L = = Ω WB Ccomp1 Ccomp2 WireBond 50 ' CWB + Cpkg + CMIM s Page 14

16 Static Compensator Capacitor values chosen prior to fabrication - Equal amounts of capacitance are used on-chip and on-package On-Package Capacitor On-Chip Capacitance Ccomp1 Ccomp2 Z WireBond LWB = = 50 Ω' s C + C + C WB pkg MIM Page 15

On-Package Capacitors Static Compensator - Embedded capacitor construction is used - No components are needed, reducing package cost - Capacitance values

17 On-Package Capacitors Static Compensator - Embedded capacitor construction is used - No components are needed, reducing package cost - Capacitance values needed can be implemented using this construction Modern Packages can achieve plane-to-plane separations of t=0.002 This translates to 0.64pF/mm 2 Page 16

18 Static Compensator On-Chip Capacitors - Device and MIM capacitors are evaluated - Targeting area beneath wire bond pad, which is typically unused 0.1um BPTM Process Device-Based Capacitor : 13 ff/um 2 MIM-Based Capacitor : 1.1 ff/um 2 Page 17

19 Static Compensator Wire Bond Modeling - Typical VLSI wire bond lengths range from 1mm to 5mm - Electrical parameter extraction is used to find L and C or wire bond Length L C Z0 1mm 0.569nH 26fF 148Ω 2mm 1.138nH 52fF 148Ω 3mm 1.707nH 78fF 148Ω 4mm 2.276nH 104fF 148Ω 5mm 2.845nH 130fF 148Ω Page 18

20 On-Package Capacitor Sizing Static Compensator - Capacitor values are found to match wire bond to 50Ω - Area is evaluated for feasibility Length Ccomp1 Ccomp2 L C Area C AreaMIM AreaDevice 1mm 102 ff 388 um ff 10 um um 2 2mm 208 ff 554 um ff 14 um um 2 3mm 325 ff 692 um ff 18 um um 2 4mm 450 ff 815 um ff 21 um um 2 5mm 575 ff 921 um ff 24 um um 2 Page 19

21 Experimental Results: Static Compensator Time Domain Analysis (TDR) - Simulation Performed using Advanced Design System from Agilent Worst Case : 5mm No Static Capacitance = 19.8% w/ Static Capacitance = 4.8% 1mm 2mm 3mm 4mm 5mm Page 20

22 Frequency Domain Analysis (Z in ) Page 21

23 Experimental Results: Static Compensator Frequency Domain Analysis (Z in ) Worst Case : 5mm f +/-10% No Static Capacitance = 1.9 GHz f +/-10% w/ Static Capacitance = 3.0 GHz 3mm Page 22

24 Limitations of Approach Static Compensator - Process/Design variation in wire bonds and capacitors lead to error - Each wire bond must be evaluated for compensation requirements Possible Enhancement - Altering compensation capacitance after fabrication - i.e., Dynamic Compensator Page 23

25 Dynamic Compensator Programmable capacitance is placed on-chip - On-chip capacitance is close enough to alter wire bond impedance - Active circuitry on-chip can switch in different amounts of capacitance On-Chip Programmable Compensation Z WireBond = LWB 50 ' s C + C = Ω WB Comp Page 24

26 Dynamic Compensator Pass Gates are used to switch in on-chip capacitors - Pass gates connect on-chip capacitance to the wire bond inductance - Pass gates have control signals which can be programmed after fabrication Page 25

27 Dynamic Compensator On-Chip circuitry is independent of package - Compensation works across multiple package technologies - This decouples IC and Package design Only IC technology is used for compensation Page 26

28 On-Chip capacitor sizing Dynamic Compensator - The on-chip capacitance performs the compensation to 50Ω - The circuit must cover the entire range of wire bond inductances - The diffusion capacitance of the pass gates must be included in the analysis Length L 1mm 2mm 3mm 4mm 5mm Ccomp C 202 ff 403 ff 605 ff 806 ff 1008 ff 200 ff < Ccomp < 1010 ff Page 27

29 Compensator Design Dynamic Compensator - The on-chip capacitance performs the compensation to 50Ω - The diffusion capacitance of the pass gates must be included in the analysis Length L 1mm 2mm 3mm 4mm 5mm Ccomp C 202 ff 403 ff 605 ff 806 ff 1008 ff C bank = 1 / 3 (C bank ) + 2 / 3 (C bank ) Page 28

30 Capacitance Design Dynamic Compensator - Pass Gates are sized to drive the on-chip capacitance -Each bank of capacitance includes the pass gates C bank1 = C pg1 + C int1 C bank2 = C pg2 + C int2 C bank3 = C pg3 + C int3 C Off = Range Offset Page 29

31 Capacitance Design Dynamic Compensator - Again, both MIM and Device-based capacitors are evaluated for area Page 30

32 Experimental Results: Dynamic Compensator Time Domain Analysis (TDR) - Simulation Performed using Advanced Design System from Agilent Worst Case : 5mm No Dynamic Capacitance = 19.8% w/ Dynamic Capacitance = 5.0% 1mm 2mm 3mm 4mm 5mm Page 31

33 Frequency Domain Analysis (Z in ) Page 32

34 Experimental Results: Dynamic Compensator Frequency Domain Analysis (Z in ) Worst Case : 5mm f +/-10% No Dynamic Capacitance = 1.9 GHz f +/-10% w/ Dynamic Capacitance = 4.1 GHz 3mm 3mm Page 33

Inductive Compensator The same theory can be applied to capacitive interconnect Spiral Inductors can be added on-chip - On-chip inductance is close enough to

35 Inductive Compensator The same theory can be applied to capacitive interconnect Spiral Inductors can be added on-chip - On-chip inductance is close enough to alter capacitive interconnect impedance - Spiral inductors are a proven on-chip technology On-Chip Spiral Inductors Z Flip Chip LFC + LComp = = 125 Ω' s C FC Page 34

36 Experimental Results: Inductor Compensator Time Domain Analysis (TDR) - Simulation Performed using Advanced Design System from Agilent Worst Case : 5mm No Inductance = 2% w/ Spiral Inductance = >0.1% Page 35

37 Experimental Results: Inductive Compensator Frequency Domain Analysis (Z in ) Flip-Chip Matching f +/-10% No Spiral Inductance = 10 GHz f +/-10% w/ Spiral Inductance > 15 GHz 3mm Page 36

38 Summary Package Interconnect causes reflections which limits system performance The move toward Advanced Packaging is Resisted due to Cost Adding On-Chip & On-Package capacitors does not add cost A Static and Dynamic Compensation Approach can match the package interconnect impedance to the system The same approach can be applied to future interconnect structures which look capacitive Page 37

39 Questions? Page 38

40 For more information about Agilent EEsof EDA, visit: Agilent Updates Get the latest information on the products and applications you select. Agilent Direct Quickly choose and use your test equipment solutions with confidence. For more information on Agilent Technologies products, applications or services, please contact your local Agilent office. The complete list is available at: Americas Canada (877) Latin America United States (800) Asia Pacific Australia China Hong Kong India Japan 0120 (421) 345 Korea Malaysia Singapore Taiwan Thailand Europe & Middle East Austria Belgium 32 (0) Denmark Finland 358 (0) France * *0.125 /minute Germany ** **0.14 /minute Ireland Israel /544 Italy Netherlands 31 (0) Spain 34 (91) Sweden Switzerland United Kingdom 44 (0) Other European Countries: Revised: March 27, 2008 Product specifications and descriptions in this document subject to change without notice. Agilent Technologies, Inc. 2008

Keysight Technologies Young s Modulus of Dielectric Low-k Materials. Application Note

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