ISA-PLAN - Präzisionswiderstände precision resistors Typ / type BVS

Transcription

1 ISA-PLAN - Präzisionswiderstände precision resistors Typ / type BVS Technische Daten / technical data Widerstandswerte resistance values 0.3, 0.5, 1, 2, 3 mohm Toleranz tolerance 1 %, 2 %, 5 % Temperaturkoeffizient ( R 1 mohm ) temperature coefficient ( tcr ) ( R 1 mohm ) < 50 ppm/k ( 20 C - 60 C ) Temperaturbereich applicable temperature range -55 C C Belastbarkeit load capacity 3W Innerer Wärmewiderstand internal heat resistance Rth < 10 K/W Induktivität ( R = 1 mohm ) inductance ( R = 1 mohm ) < 3 nh Stabilität unter Nennlast ( T K = 95 C ) stability ( nominal load ) ( T K = 95 C ) Abweichung < 0.5% nach 2000 h deviation < 0.5% after 2000 h Merkmale / features 3 Watt Dauerleistung 3 Watt permanent power 0.2 R/R 20 [%] Dauerströme bis 100 A ( 0,3 mohm ) constant current up to 100 Amps ( 0,3 mohm ) Massive Kupferanschlüsse heavy copper connectors sehr gute Langzeitstabilität excellent long term stability Niedrige Induktivität low inductance value Geeignet für Löttemperaturen bis 350 C / 30 sek oder 250 C / 10 min max. solder temperature up to 350 C / 30 sec or 250 C / 10 min T [ o C] Temperaturabhängigkeit des elektrischen Widerstandes von ALU-CHROM-Widerständen temperature dependence of the electrical resistance of ALU-CHROM-resistors Bauteilmontage: Reflow löten oder schweißen mounting: reflow soldering or welding on copper Applikationen / application 1 R/R 20 [%] Meßwiderstand für Leistungshybride current sensor for power hybrid applications Frequenzumrichter / frequency converters Leistungsmodule / power modules Hochstromanwendungen in der Automobiltechnik high current applications for the automotive market T [ o C] Temperaturabhängigkeit des elektrischen Widerstandes von MANGANIN-Widerständen temperature dependence of the electrical resistance of MANGANIN-resistors Technische Änderungen vorbehalten - technical modifications reserved Isabellenhütte Heusler GmbH KG Eibacher Weg D Dillenburg - Telefon / Phone +49 (0) Fax: +49 (0) info@isabellenhuette.de - Internet: BVS-1 / 3

2 Application report no. 01 Subject: parallel connection of BVS-resistors It is known that for parallel connected low ohmic resistors the current distribution between the resistors and its temperature dependence may have a remarkable influence on the overall TC-value of the effective resistor ( R eff = U sense / I total ). This is especially true for nonsymmetrical PC-board layouts. The objective of this investigation was to find a layout structure for the sense-connection that is more or less insensitive to the layout of the current path i. e. to the current distribution between the single resistors. The following graphs show the PC-board layout for both the current and sense structures as well as the results concerning the final resistance value (measured by R eff = U sense /I total ) and the TC. The test structures were manufactured using standard FR4 material with a copper thickness of 40 µm. Explanations: solder connection current pads on the PC-board current leads sense pads on the PC board BVS-resistor APP-REP-001.DOC page 1 of lab/ew, he/me

3 Results: For both 2 and 3 resistors in parallel there is an optimum sense-structure which supplies absolutely correct results for both resistance value and TC independent of the current lead position (i.e. the lead distribution) between the resistors. see layout 4, 6 and 7 for 2 resistors and layout 8, 9 and 10 for 3 resistors in parallel. The explanation for this result is that the sense structure is directly averaging the individual, slightly different sense voltages of the resistors. On the other hand a wrong layout may cause catastrophic results as shown in layout 2 and 3 resp. layout 13 and 14 with TC-values as high as ppm/k or low as ppm/k and variations of the total resistor value of +30% to 25%. The actual R(T)-curves for the resistors are shown in page 6. In the upper part the resolution is ± 10 % showing the extremely bad results for the wrong layouts. In this plot the results of the correct layouts cannot be resolved from the horizontal axis (Zero-line). The lower part of the graph shows the same results in a higher resolution (± 1 %). The maximum change of the resistors mounted on correct layout structures is the same for 2 or 3 resistors in parallel and even at the limits of the temperature range less than 0.1 %. The graphs on page 7 show the actual PC-board layouts used in an enlarged size of 5 : 1. APP-REP-001.DOC page 2 of lab/ew, he/me

4 Part 1 : 2 resistors in parallel (BVS A R ) geometry and experimental configuration with results for different layouts Layout 1: TK : -5 ppm/k R(20 C)=0.50 mω Layout 2: TK : +370 ppm/k R(20 C)=0.59 mω Layout 3: TK : -560 ppm/k R(20 C)=0.41 mω Layout 4: TK : -3 ppm/k R(20 C)=0.50 mω APP-REP-001.DOC page 3 of lab/ew, he/me

5 Layout 5: TK : 0 ppm/k R(20 C)= 0.50 mω Layout 6: TK : -2 ppm/k R(20 C)=0.50 mω Layout 7: TK : -2 ppm/k R(20 C)=0.50 mω APP-REP-001.DOC page 4 of lab/ew, he/me

6 Part 2 : 3 resistors in parallel ( BVS A R ) geometry and experimental configuration with results for different layouts Layout 8: TK : 0 ppm/k R(20 C)=0.33mΩ Layout 9: TK: +3 ppm/k R(20 C)=0.33 mω Layout 10: TK : -3 ppm / K R(20 C)=0.33 mω Layout 11 und 12: TK : -75 ppm / K R(20 C)=0.32 mω Layout 13 : TK : -770 ppm/k R(20 C)=0.25 mω Layout 14: TK : +500 ppm / K R(20 C)=0.43 mω APP-REP-001.DOC page 5 of lab/ew, he/me

7 dr/r20 in % T in C Grafik :Layout Layout Nr ,5 dr/r20 in % 0-0, T in C Grafik :Layout Layout Nr APP-REP-001.DOC page 6 of lab/ew, he/me

8 APP-REP-001.DOC page 7 of lab/ew, he/me

9 ISA-PLAN - Präzisionswiderstände precision resistors Typ / type BVS Ausgabe / Issue : 31/10/ P / P Nom reduzierte Stabilität 1% reduced stability 1% Stabilität 0,5% stability 0,5% Kontaktstellentemperatur T K / [ o C] terminal temperature T K / [ o C] Lastminderungskurve power derating Abmessungen BVS ( mm ) dimensions BVS ( mm ) Layoutvorschlag für einen Vierleiteranschluß des Widerstandes proposal for pcb-layout with four terminal configuration Typ type Wert value Material material Dicke (D) thickness (D) BVS-M-R0003 0,3 mohm Manganin 1,42 mm BVS-M-R0005 0,5 mohm Manganin 0,86 mm BVS-M-R001 1 mohm Manganin (0,42 ± 0,05) mm BVS-A-R001 1 mohm Aluchrom 1,30 mm BVS-A-R002 2 mohm Aluchrom 0,64 mm BVS-A-R003 3 mohm Aluchrom (0,43 ± 0,05) mm Typ type BVS-M Bestellbeispiel / ordering example e BVS-M-R Material material Manganin Widerstandswert resistance value Toleranz tolerance 1 mohm 1 % Tabelle: Typische Materialstärken in Abhängigkeit vom Widerstandswert Maße ohne Toleranzen nach DIN ISO mittel table: typical material thickness vs. resistance value Dimensions without tolerances acc. to DIN ISO medium Technische Änderungen vorbehalten - technical modifications reserved Isabellenhütte Heusler GmbH KG Eibacher Weg D Dillenburg - Telefon / Phone +49 (0) Fax: +49 (0) info@isabellenhuette.de - Internet: BVS-2 / 3

10 ISA-PLAN - Präzisionswiderstände precision resistors Typ / type BVS Ausgabe / Issue : 31/10/2000 power [W] 1M 100k 10k 100k 1k 10k 100 pulse energy [J] 1k M 10 1 power [W] µs 10 µs 100 µs 1 ms 10 ms 100 ms 1 s 10 s 100 s pulse width Grenzwerte / Limits: dr/r 0 nach 1*10 6 Pulsen: < 1% Mittlere Pulsleistung < 1/10 P 0 dr/r 0 after 1*10 6 pulse cycles: < 1% average pulsepower < 1/10 P 0 Gurtinformation / tape and reel information n Norm / specification IEC Gurtbreite / tape width Anzahl Bauteile (Stk.) parts per reel (pcs) 16 mm 3000 Gurtinformationen tape & reel information Technische Änderungen vorbehalten - technical modifications reserved Isabellenhütte Heusler GmbH KG Eibacher Weg D Dillenburg - Telefon / Phone +49 (0) Fax: +49 (0) info@isabellenhuette.de - Internet: BVS-3 / 3