FERRITES. March Ni-Zn. Ferrites for EMI Suppression. BB series(1 Hole)

FERRITES. March Ni-Zn. Ferrites for EMI Suppression. T series(toroidal)

March 04 Ni-Zn Ferrites for EMI Suppression T series(toroidal) (/8) REMINDERS FOR USING THESE PRODUCTS Please be sure to read this manual thoroughly before using the products. The products listed on this

CAPACITORS. February Ultra high voltage ceramic capacitors. With metal terminals For GCB/GIS. TSF/H/GA series

February 217 Ultra high voltage ceramic capacitors With metal terminals For GCB/GIS TSF/H/GA series (2/6) REMINDERS FOR USING THESE PRODUCTS (1) During transportation and storage Do not transport or store

YEAR DATE: DAY MONTH. TDK Corporation Sales. Engineering. Marketing Group. Business Group. Magnetics APPROVED CHECKED.

SPECIFICATION SPEC. No.C425NAA00007-1 DATE Sep. 9. 2015 To Xiamen Holder Electronics Co.,Ltd. CUSTOMER S PRODUCT NAME TDK S PRODUCT NAME THIN FILM INDUCTOR TFM252010ALM-MTAA Series RECEIPT CONFIRMATION

Ferrite Cores For Flat Cable and Flexible Substrate Square Type

(1/5) 003-03 / 200405 / e9b22_sh.fm FEATURES Both regular and clamp-on types are available for use with flat cables and flexible substrate. Moreover, the thin type matched to small space is prepared. APPLICATIONS

Overview. Benefits. Applications. Turns and Impedance Characteristics. Core Material and Effective Frequency Range

EMI Core ESD-FPL Series Solid Cores for Flat Cables Overview The KEMET ESD-FPL Series solid cores are designed for use on flat cable. A wide range of sizes and shapes are available. Benefits Solid construction

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K02F

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K02F High Speed Switching Applications Unit: mm Small package Low on resistance : R on = 200 mω (max) (V GS = 4 V) : R on = 250 mω (max) (V

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6N15FE

SSMNFE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSMNFE High Speed Switching Applications Analog Switching Applications Unit: mm Small package Low ON resistance : R on =. Ω (max) (@V GS

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J16TE. DC I D 100 ma Pulse I DP 200

High Speed Switching Applications Analog Switch Applications TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSMJ6TE Small package Low on-resistance : R on = 8 Ω (max) (@V GS = 4 V) : R on =

P D = 5 W Transient Voltage Suppressor. Package. Description. Features. Applications. Typical Application. (1) (2) (1) Cathode (2) Anode

P D = 5 W Transient Voltage Suppressor Data Sheet Description The is a power Zener diode designed for the protection of automotive electronic units, especially from the surge generated during load dump

P D = 5 W / 6 W Transient Voltage Suppressor. Description. Package SZ-10. Features. Selection Guide. Applications. Typical Application

P D = 5 W / 6 W Transient Voltage Suppressor SZ-0N Series Data Sheet Description The SZ-0N series are power Zener diodes designed for the protection of automotive electronic units, especially from the

TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM3J117TU. Characteristic Symbol Test Condition Min Typ. Max Unit

TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSMJ7TU High-Speed Switching Applications 4 V drive Low ON-resistance: R on = 225 mω (max) (@V GS = ) R on = 7 mω (max) (@V GS = V) Absolute Maximum

P D = 5 W / 6 W Transient Voltage Suppressor. Package SZ-10. Description. Features. Selection Guide. Applications. Typical Application

P D = 5 W / 6 W Transient Voltage Suppressor SZ-0N Series Data Sheet Description The SZ-0N series are power Zener diodes designed for the protection of automotive electronic units, especially from the

TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC7SG02FU IN A GND

TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC7SG02FU 2 Input NOR Gate Features High-level output current: I OH /I OL = ±8 ma (min) at = 3.0 High-speed operation: t pd = 2.4 ns (typ.) at

Chip tantalum capacitors (Fail-safe open structure type)

TCFG1C6M8R Chip tantalum capacitors (Fail-safe open structure type) TCFG Series Case Features 1) Safety design by open function built - in. 2) Wide capacitance range 3) Screening by thermal shock. Dimensions

Chip tantalum capacitors (Fail-safe open structure type)

TCFG0J106M8R Chip tantalum capacitors (Fail-safe open structure type) TCFG Series Case Features 1) Safety design by open function built - in. 2) Wide capacitance range 3) Screening by thermal shock. Dimensions

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K17FU

SSMK7FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSMK7FU High Speed Switching Applications Analog Switch Applications Unit: mm Suitable for high-density mounting due to compact package

CL-L102-C7D. 1. Scope of Application. These specifications apply to LED package, model CL-L102-C7D. 2. Part code

Specification sheet 1/10 1. Scope of Application These specifications apply to LED package, model. 2. Part code Series L102 : High power LED for general lighting Watt Class C7 : 7 watt class package Lighting

TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOSⅤ-H) TPC8037-H

TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOSⅤ-H) TPC7-H TPC7-H High-Efficiency DC-DC Converter Applications Notebook PC Applications Portable Equipment Applications Unit: mm Small

TPCA8107-H 4± ± M A .0±.0± 0.15± ± ± ± ± ± 4.25±0.2 5±0. 3. Maximum Ratings (Ta 25 C)

TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (Ultra-High-speed U-MOSIII) High Efficiency DC/DC Converter Applications Notebook PC Applications Portable Equipment Applications CCFL Inverter

TPC8203 TPC8203. Lithium Ion Battery Applications Portable Equipment Applications Notebook PCs. Maximum Ratings (Ta = 25 C) Circuit Configuration

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U MOSII) TPC8203 Lithium Ion Battery Applications Portable Equipment Applications Notebook PCs Unit: mm Small footprint due to small and thin

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS IV) TPC8028

TPC TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS IV) TPC Lithium Ion Battery Applications Portable Equipment Applications Notebook PC Applications Unit: mm Small footprint due to small

TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (Ultra-High-speed U-MOSIII) TPCA8011-H

TPCA-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (Ultra-High-speed U-MOSIII) TPCA-H High Efficiency DC/DC Converter Applications Notebook PC Applications Portable-Equipment Applications.±..7.±..

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS IV) TPC8026

TPC26 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS IV) TPC26 Lithium Ion Battery Applications Portable Equipment Applications Notebook PC Applications Unit: mm Small footprint due

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅣ) TPCA8103

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅣ) TPCA83 TPCA83 Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications.±..27 8.4±. Unit: mm. M A Small

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra-High-Speed U-MOSIII) TPC8017-H

TPC7-H TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra-High-Speed U-MOSIII) TPC7-H High-Efficiency DC/DC Converter Applications Notebook PC Applications Portable-Equipment Applications

FG Silicon N-channel MOS FET (FET1) Silicon P-channel MOS FET (FET2) For switching circuits. Package. Overview. Features. Marking Symbol: V7

FG6943 Silicon N-channel MOS FET (FET) Silicon P-channel MOS FET (FET2) For switching circuits Overview FG6943 is N-P channel dual type small signal MOS FET employed small size surface mounting package.

TC74LCX08F,TC74LCX08FN,TC74LCX08FT,TC74LCX08FK

TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC74LCX08F/FN/FT/FK TC74LCX08F,TC74LCX08FN,TC74LCX08FT,TC74LCX08FK Low-Voltage Quad 2-Input AND Gate with 5-V Tolerant Inputs and Outputs The

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6N44FE. DC I D 100 ma Pulse I DP 200

SSMNFE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSMNFE High Speed Switching Applications Analog Switching Applications.±. Unit: mm Compact package suitable for high-density mounting Low

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) TPC6004

TPC TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) TPC Notebook PC Applications Portable Equipment Applications Unit: mm Low drain-source ON resistance: R DS (ON) = 9 mω (typ.) High

TC74LCX244F,TC74LCX244FW,TC74LCX244FT,TC74LCX244FK

TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC74LCX244F/FW/FT/FK TC74LCX244F,TC74LCX244FW,TC74LCX244FT,TC74LCX244FK Low-Voltage Octal Bus Buffer with 5-V Tolerant Inputs and Outputs The

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ168. DC I D 200 ma Pulse I DP 800

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type High Speed Switching Applications Analog Switch Applications Interface Applications Unit: mm Excellent switching time: ton = 14 ns (typ.) High

TC74HC155AP, TC74HC155AF

TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC74HC155AP, TC74HC155AF Dual 2-to-4 Line Decoder 3-to-8 Line Decoder TC74HC155AP/AF The TC74HC155A is a high speed CMOS DUAL 2-to-4 LINE DECODER

TC4013BP,TC4013BF,TC4013BFN

TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC4013BP,TC4013BF,TC4013BFN TC4013B Dual D-Type Flip Flop TC4013B contains two independent circuits of D type flip-flop. The input level applied

TC7WB66CFK,TC7WB66CL8X TC7WB67CFK,TC7WB67CL8X

CMOS Digital Integrated Circuits Silicon Monolithic TC7WB66CFK,TC7WB66CL8X TC7WB67CFK,TC7WB67CL8X 1. Functional Description Dual SPST Bus Switch 2. General TC7WB66CFK/L8X,TC7WB67CFK/L8X The TC7WB66CFK/L8X

TOSHIBA Field-Effect Transistor Silicon N Channel MOS Type (U-MOSⅣ) SSM6N7002BFU. DC I D 200 ma Pulse I DP 800

TOSHIBA Field-Effect Transistor Silicon N Channel MOS Type (U-MOSⅣ) SSM6N7BFU High-Speed Switching Applications Analog Switch Applications Small package Low ON-resistance : R DS(ON) =. Ω (max) (@V GS =.

S-57M1 Series HIGH-SPEED BIPOLAR HALL EFFECT LATCH. Features. Applications. Package. ABLIC Inc., Rev.1.

www.ablic.com www.ablicinc.com HIGH-SPEED BIPOLAR HALL EFFECT LATCH ABLIC Inc., 2011-2013 Rev.1.2_02 The, developed by CMOS technology, is a high-accuracy Hall IC that operates with a high-sensitivity,

Thermal Calculation for Linear Regulator

Linear Regulator Series Thermal Calculation for Linear Regulator The loss in linear regulators increases as the difference between the input and output voltages increases. Since most of the loss is converted

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅣ) TPC8114. DC (Note 1) I D 18 A Pulse (Note 1) I DP 72

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅣ) TPC84 Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications Unit: mm Small footprint due to small

TPCS8209 查询 TPCS8209 供应商 TPCS8209. Lithium Ion Battery Applications Notebook PC Applications Portable Machines and Tools. Maximum Ratings (Ta = 25 C)

查询 TPCS89 供应商 TPCS89 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) TPCS89 Lithium Ion Battery Applications Notebook PC Applications Portable Machines and Tools Unit: mm Small footprint

TOSHIBA Field Effect Transistor Silicon N, P Channel MOS Type. (P Channel U MOS IV/N Channel U-MOS III) TPC8405. Rating P Channel N Channel

TPC85 TOSHIBA Field Effect Transistor Silicon N, P Channel MOS Type Lithium Ion Secondary Battery Applications Portable Equipment Applications Notebook PC Applications (P Channel U MOS IV/N Channel U-MOS

ABLIC Inc., Rev.2.2_02

S-5841 Series www.ablicinc.com TEMPERATURE SWITCH IC (THERMOSTAT IC) ABLIC Inc., 2007-2015 Rev.2.2_02 The S-5841 Series is a temperature switch IC (thermostat IC) which detects the temperature with a temperature

Linear Regulator Application Information

Linear Regulator Application Information IC Product Name BD00IA5WEFJ Topology LDO Linear Regulator Voltage source Input Output 1 2.4V to 5.5V 1.0V, 500mA *1 2 2.4V to 5.5V 1.2V, 500mA *1 3 2.4V to 5.5V

TC74VHCT573AF,TC74VHCT573AFW,TC74VHCT573AFT

TOSHIBA CMOS igital Integrated Circuit Silicon Monolithic TC74HCT573AF/AFW/AFT TC74HCT573AF,TC74HCT573AFW,TC74HCT573AFT Octal -Type Latch with 3-State Output The TC74HCT573A is an advanced high speed CMOS

To Non-Controlled Copy

SPECIFICATION SPEC. No. C-Array-a D A T E : 2013 Sep. To Non-Controlled Copy CUSTOMER S PRODUCT NAME TDK PRODUCT NAME Upon the acceptance of this spec. previous spec. (C2004-816-031) shall be abolished.

Reference Only. Spec. No. JENF243G 0004G-01 P 1 / 12. Ferrite Bead Inductor BL02/BL03 Series

Spec. No. JENF243G 0004G-01 P 1 / 12 1. Scope Ferrite Bead Inductor B02/B03 Series Reference Specification This reference specification applies Ferrite Bead Inductor (Radial Type). 2. Part Numbering (Ex.)

S-57P1 S Series FOR AUTOMOTIVE 150 C OPERATION HIGH-WITHSTAND VOLTAGE HIGH-SPEED BIPOLAR HALL EFFECT LATCH IC. Features. Applications.

www.ablicinc.com FOR AUTOMOTIVE 150 C OPERATION HIGH-WITHSTAND VOLTAGE HIGH-SPEED BIPOLAR HALL EFFECT LATCH IC ABLIC Inc., 2015-2017 This IC, developed by CMOS technology, is a high-accuracy Hall effect

TPCP8402 TPCP8402. Portable Equipment Applications Mortor Drive Applications DC-DC Converter Applications. Maximum Ratings (Ta = 25 C)

TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type (U-MOS IV / U-MOS III) TPCP8402 Portable Equipment Applications Mortor Drive Applications DC-DC Converter Applications Unit: mm Low drain-source

SMD B EASV1003WA1. Applications Telecommunication: indicator and backlighting in telephone and fax. Flat backlight for LCD, switch and symbol.

SMD B Features Package in 8mm tape on 7 diameter reel. Compatible with automatic placement equipment. Compatible with infrared and vapor phase reflow solder process. Mono-color type. Pb-free. The product

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS III) TPCF8102

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS III) TPCF82 TPCF82 Notebook PC Applications Portable Equipment Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 24 mω (typ.)

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6N37FU

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6N7FU High Speed Switching Applications Analog Switch Applications Unit: mm.v drive Low ON-resistance R DS(ON) =.6 Ω (max) (@V GS =. V) R DS(ON)

1.0% (1.2 V to 1.45 V output product: 15 mv) 150 mv typ. (3.0 V output product, I OUT = 100 ma)

S-126 Series www.ablicinc.com ULTRA LOW CURRENT CONSUMPTION AND LOW DROPOUT CMOS VOLTAGE REGULATOR ABLIC Inc., 26-215 Rev.3.2_2 The S-126 Series is a positive voltage regulator with ultra low current consumption,

TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U MOSIII) 2SJ668

TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U MOSIII) 2SJ668 Relay Drive, DC/DC Converter and Motor Drive Applications Unit: mm 4 V gate drive Low drain source ON-resistance: R DS (ON)

IS181 DESCRIPTION FEATURES

DESCRIPTION The IS181 series of optocoupler consists of an infrared light emitting diode optically coupled to an NPN silicon photo transistor in a space efficient Mini Flat Package. FEATURES Low Profile

TA7262P,TA7262P(LB),TA7262F

TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC TA7262P,TA7262P(LB),TA7262F DC MOTOR DRIVER (3 PHASE Bi DIRECTIONAL) The TA7262P / P (LB) / F are 3 Phase Bi Directional supply voltage control

TC74HC148AP,TC74HC148AF

TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC74HC148AP,TC74HC148AF 8-to-3 Line Priority Encoder The TC74HC148A is a high speed CMOS 8-to-3 LINE ENCODER fabricated with silicon gate C2MOS

S-5743 A Series 125 C OPERATION HIGH-WITHSTAND VOLTAGE HIGH-SPEED BIPOLAR HALL EFFECT LATCH IC. Features. Applications. Package.

www.ablicinc.com S-5743 A Series 125 C OPERATION HIGH-WITHSTAND VOLTAGE HIGH-SPEED BIPOLAR HALL EFFECT LATCH IC ABLIC Inc., 2015-2017 Rev.1.1_02 This IC, developed by CMOS technology, is a high-accuracy

TC74HC7292AP,TC74HC7292AF

TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC74HC7292AP,TC74HC7292AF Programmable Divider/Timer The TC74HC7292A is a high speed CMOS PROGRAMMABLE DIVIDER/TIMER fabricated with silicon gate

TC74VCX14FT, TC74VCX14FK

TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC74CX14FT, TC74CX14FK Low-oltage Hex Schmitt Inverter with 3.6- Tolerant Inputs and Outputs TC74CX14FT/FK The TC74CX14FT/FK is a high-performance

IS2805 DESCRIPTION FEATURES

DESCRIPTION The is an optically coupled isolator consists of two infrared emitting diodes in reverse parallel connection and optically coupled to an NPN silicon photo transistor. This device belongs to

Common mode ESD filter LXES**D series Document No. LX Rev1.2

Common mode ESD filter LXES**D series Document No. LX 1-1126 Rev1.2 1. This specification shall be applied to the ESD Protection Device. LXES11DAA2-135 LXES21DAA4-136 LXES11DAA2-137 LXES21DAA4-138 LXES21DAA4-14

2SC5748 2SC5748. Horizontal Deflection Output for HDTV&Digital TV. Maximum Ratings (Tc 25 C) Electrical Characteristics (Tc 25 C)

TOSHIBA Transistor Silicon NPN Triple Diffused Mesa Type Horizontal Deflection Output for HDTV&Digital TV. Unit: mm High voltage: VCBO = V Low saturation voltage: VCE (sat) = V (max) High speed: tf =.

2SC4203 2SC4203. Video Output for High Definition VDT High Speed Switching Applications. Maximum Ratings (Ta = 25 C)

TOSHIBA Transistor Silicon Epitaxial Planar Type 2SC42 Video Output for High Definition VDT High Speed Switching Applications Unit: mm High transition frequency: ft = 4 MHz (typ.) (VCE = V, IC = 7 ma)

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-mosvi) 2SK3667

SK7 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-mosvi) SK7 Switching Regulator Applications Unit: mm Low drain-source ON resistance: R DS (ON) =.7Ω (typ.) High forward transfer admittance:

SPECIFICATION. Non-Controlled Copy RECEIPT CONFIRMATION. SPEC. No. A-SoftCKC-b D A T E : 2015 Jan. DATE: YEAR MONTH DAY

SPECIFICATION SPEC. No. A-SoftCKC-b D A T E : 2015 Jan. To Non-Controlled Copy CUSTOMER S PRODUCT NAME TDK PRODUCT NAME Upon the acceptance of this spec. previous spec. (C2004-816-031) shall be abolished.

TC74HC373AP,TC74HC373AF,TC74HC373AFW

TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC74HC373AP/AF/AFW TC74HC373AP,TC74HC373AF,TC74HC373AFW Octal D-Type Latch with 3-State Output The TC74HC373A is a high speed CMOS OCTAL LATCH

TC74HC74AP,TC74HC74AF,TC74HC74AFN

TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC74HC74AP/AF/AFN TC74HC74AP,TC74HC74AF,TC74HC74AFN Dual D-Type Flip Flop Preset and Clear The TC74HC74A is a high speed CMOS D FLIP FLOP fabricated

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π MOSV) 2SK3497

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π MOSV) High Power Amplifier Application Unit: mm High breakdown voltage: V DSS = 8 V Complementary to SJ68.. MAX. 5.9 MAX. Ф. ±... 9..5. ±..

TC4028BP, TC4028BF TC4028BP/BF. TC4028B BCD-to-Decimal Decoder. Pin Assignment TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic

TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC4028BP, TC4028BF TC4028B BCD-to-Decimal Decoder TC4028B is a BCD-to-DECIMAL decoder which converts BCD signal into DECIMAL signal. Of ten outputs

S-1000 Series ULTRA-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR. Features. Applications. Packages. Seiko Instruments Inc. 1.

S-1000 Series www.sii-ic.com ULTRA-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR Seiko Instruments Inc., 2004-2015 Rev.3.1_00 The S-1000 series is a series of high-precision voltage detectors developed

65 V, 100 ma NPN/PNP general-purpose transistor. Table 1. Product overview Type number Package NPN/NPN PNP/PNP Nexperia JEITA

Rev. 1 17 July 29 Product data sheet 1. Product profile 1.1 General description NPN/PNP general-purpose transistor pair in a very small Surface-Mounted Device (SMD) plastic package. Table 1. Product overview

TC74VHC164F,TC74VHC164FN,TC74VHC164FT,TC74VHC164FK

TOSHIBA CMOS igital Integrated Circuit Silicon Monolithic TC74VHC164F/FN/FT/FK TC74VHC164F,TC74VHC164FN,TC74VHC164FT,TC74VHC164FK 8-Bit Shift egister (S-IN, P-OUT) The TC74VHC164 is an advanced high speed

S-5841 Series TEMPERATURE SWITCH IC (THERMOSTAT IC) Features. Applications. Packages. Seiko Instruments Inc. 1.

S-5841 Series www.sii-ic.com Seiko Instruments Inc., 2007-2012 Rev.2.1_00 The S-5841 Series is a temperature switch IC (thermostat IC) which detects the temperature with a temperature accuracy of ±2.5

Detection of S pole Detection of N pole Active "L" Active "H" Nch open-drain output Nch driver built-in pull-up resistor. f C = 250 khz typ.

www.ablic.com www.ablicinc.com S-5732 B Series 125 C OPERATION HIGH-WITHSTAND VOLTAGE HIGH-SPEED UNIPOLAR DETECTION TYPE HALL EFFECT SWITCH IC ABLIC Inc., 2016-2017 Rev.2.1_02 This IC, developed by CMOS

MP6901 MP6901. High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching. Maximum Ratings (Ta = 25 C)

TOSHIBA Power Transistor Module Silicon Epitaxial Type (Darlington power transistor in ) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching. Industrial Applications

Temperature range Name Description Version XC7SET32GW 40 C to +125 C TSSOP5 plastic thin shrink small outline package; 5 leads; body width 1.

Rev. 01 3 September 2009 Product data sheet 1. General description 2. Features 3. Ordering information is a high-speed Si-gate CMOS device. It provides a 2-input OR function. Symmetrical output impedance

TA78033AS, TA7804AS, TA7805AS, TA7807AS, TA7808AS, TA7809AS

TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TA7833AS, TA784AS, TA785AS, TA787AS, TA788AS, TA789AS TA7833, 4, 5, 7, 8, 9AS 1 A Three-Terminal Positive oltage Regulator The TA78***AS series

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-mosⅦ) TK12A50D

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-mosⅦ) TKAD TKAD Switching Regulator Applications Unit: mm Low drain-source ON-resistance: R DS (ON) =. Ω (typ.) High forward transfer admittance:

V DET1(S) to V DET3(S) = 10.5 V to 21.5 V (0.1 V step)

S-8229 Series www.sii-ic.com Seiko Instruments Inc., 2012 Rev.1.0_00 The S-8229 Series is a battery monitoring IC developed using CMOS technology. Compared with conventional CMOS voltage detectors, the

TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-mos VI) 2SK4108. JEDEC Repetitive avalanche energy (Note 3) E AR 15 mj

SK TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-mos VI) SK Switching Regulator Applications Unit: mm Low drain source ON resistance : R DS (ON) =. Ω (typ.) High forward transfer admittance

TPCF8402 F6B TPCF8402. Portable Equipment Applications Mortor Drive Applications DC-DC Converter Applications. Maximum Ratings (Ta = 25 C)

TPCF84 TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type (U-MOS IV / U-MOS III) TPCF84 Portable Equipment Applications Mortor Drive Applications DC-DC Converter Applications Unit: mm Low drain-source

Anti-surge Chip Resistors

Anti-surge hip Resistors Datasheet Features 1) Exclusive resistive element pattern and laser trimming technology results in significantly improved surge resistance characteristics. 2) 2kV to 5kV electrostatic

2-input AND gate with open-drain output. The 74AHC1G09 is a high-speed Si-gate CMOS device.

74HC1G09 Rev. 02 18 December 2007 Product data sheet 1. General description 2. Features 3. Ordering information The 74HC1G09 is a high-speed Si-gate CMOS device. The 74HC1G09 provides the 2-input ND function

2SC3074 2SC3074. High Current Switching Applications. Maximum Ratings (Ta = 25 C)

SC7 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) SC7 High Current Switching Applications Unit: mm Low collector saturation voltage: VCE (sat) =. V (max) (IC = A) High speed switching time:

Detection of both poles, S pole or N pole Active "L", active "H" Nch open-drain output, CMOS output

S-5716 Series www.ablicinc.com LOW CURRENT CONSUMPTION BOTH POLES / UNIPOLAR DETECTION TYPE HALL IC ABLIC Inc., 2011-2015 Rev.1.6_02 The S-5716 Series, developed by CMOS technology, is a high-accuracy

SDT800-STR. Description. Features. Agency Approvals. Applications. Absolute Maximum Ratings. Schematic Diagram. Ordering Information

Description The consists of two phototransistors, each optically coupled to a light emitting diode for DC input operation. Optical coupling between the input IR LED and output phototransistor allows for

TOSHIBA Field-Effect Transistor Silicon N / P Channel MOS Type SSM6L35FE

SSM6L3FE TOSHIBA Field-Effect Transistor Silicon N / P Channel MOS Type SSM6L3FE High-Speed Switching Applications Analog Switch Applications.6±. Unit: mm N-ch:.2-V drive.2±. P-ch:.2-V drive N-ch, P-ch,

2-input EXCLUSIVE-OR gate

Rev. 01 7 September 2009 Product data sheet 1. General description 2. Features 3. Ordering information is a high-speed Si-gate CMOS device. It provides a 2-input EXCLUSIVE-OR function. Symmetrical output

Chip Bead Cores Type: ECCL ECML ECB Features Effective noise suppression for power lines and high speed signal lines Easy pattern layout on PC Board ohs compliant Type: ECCL, ECML Low DC esistance to 8

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOS ) TK15J60U

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOS ) Switching Regulator Applications Unit: mm Low drain-source ON-resistance: R DS (ON) =. (typ.) High forward transfer admittance: Y fs

TC74VHC574F,TC74VHC574FW,TC74VHC574FT,TC74VHC574FK

TOSHIBA CMOS igital Integrated Circuit Silicon Monolithic TC74VHC574F/FW/FT/FK TC74VHC574F,TC74VHC574FW,TC74VHC574FT,TC74VHC574FK Octal -Type Flip Flop with 3-State Output The TC74VHC574 is advanced high

TC74HC4051AP,TC74HC4051AF,TC74HC4051AFT TC74HC4052AP,TC74HC4052AF,TC74HC4052AFT TC74HC4053AP,TC74HC4053AF,TC74HC4053AFN,TC74HC4053AFT

T4H40,40P/F/FT,40P/F/FN/FT TOSHI MOS Digital Integrated ircuit Silicon Monolithic T4H40P,T4H40F,T4H40FT T4H40P,T4H40F,T4H40FT T4H40P,T4H40F,T4H40FN,T4H40FT T4H40P/F/FT 8-hannel nalog Multiplexer/Demulitiplexer

TPCP8404 TPCP8404. Portable Equipment Applications Motor Drive Applications. Absolute Maximum Ratings (Ta = 25 C) Circuit Configuration

TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type (U-MOⅤ/U-MOSⅣ) TPCP8 Portable Equipment Applications Motor Drive Applications Low drain-source ON-resistance : P Channel R DS (ON) = 38 mω(typ.)

LB1846M, 1848M. Low-Voltage/Low Saturation Voltage Type Bidirectional Motor Driver

Ordering number : ENN5339A Monolithic Digital IC LB1846M, 1848M Low-Voltage/Low Saturation Voltage Type Bidirectional Motor Driver Overview The LB1846M and LB1848M are 2-channel low-voltage, low saturation

S-882Z Series ULTRA-LOW VOLTAGE OPERATION CHARGE PUMP IC FOR STEP-UP DC-DC CONVERTER STARTUP. Rev.1.2_00. Features. Applications.

ULTRA-LOW VOLTAGE OPERATION CHARGE PUMP IC FOR STEP-UP DC-DC CONVERTER STARTUP The is a charge pump IC for step-up DC-DC converter startup, which differs from conventional charge pump ICs, in that it uses

N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using

Rev. 24 March 29 Product data sheet. Product profile. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package

TC4066BP,TC4066BF,TC4066BFN,TC4066BFT

TOSHIBA MOS Digital Integrated ircuit Silicon Monolithic T466BP/BF/BFN/BFT T466BP,T466BF,T466BFN,T466BFT T466B Quad Bilateral Switch T466B contains four independent circuits of bidirectional switches.

PHD/PHP36N03LT. 1. Product profile. 2. Pinning information. N-channel TrenchMOS logic level FET. 1.1 General description. 1.

Rev. 2 8 June 26 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. 1.2

1-A Dual-HBD (Dual-Half-Bridge Driver) TLE4207G

-A Dual-HBD (Dual-Half-Bridge Driver) Features Delivers up to.8 A continuous Optimized for DC motor management applications Very low current consumption in stand-by (Inhibit) mode Low saturation voltage;

NPN/PNP low V CEsat Breakthrough in Small Signal (BISS) transistor pair in a SOT457 (SC-74) Surface Mounted Device (SMD) plastic package.

Rev. 03 11 December 2009 Product data sheet 1. Product profile 1.1 General description NPN/PNP low V CEsat Breakthrough in Small Signal (BISS) transistor pair in a SOT457 (SC-74) Surface Mounted Device

150 V, 2 A NPN high-voltage low V CEsat (BISS) transistor

Rev. 0 November 2009 Product data sheet. Product profile. General description NPN high-voltage low V CEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted