Metal-Semiconductor Interfaces. Metal-Semiconductor contact. Schottky Barrier/Diode. Ohmic Contacts MESFET. UMass Lowell Sanjeev Manohar
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1 Metal-Semiconductor Interface Metal-Semiconductor contact Schottky Barrier/iode Ohmic Contact MESFET UMa Lowell Sanjeev
2 evice Building Block UMa Lowell Sanjeev
3 UMa Lowell Sanjeev
4 Energy band diagram of an iolated metal adjacent to an iolated n-type emiconductor UMa Lowell Sanjeev
5 Energy band diagram of a metal-emiconductor contact in thermal equilibrium. UMa Lowell Sanjeev
6 Meaured barrier height for metal-ilicon and metal-gallium arenide contact UMa Lowell Sanjeev
7 Energy band diagram of metal n-type and p-type emiconductor under thermal equilibrium UMa Lowell Sanjeev
8 Energy band diagram of metal n-type and p-type emiconductor under forward a UMa Lowell Sanjeev
9 Energy band diagram of metal n-type and p-type emiconductor under revere a. UMa Lowell Sanjeev
10 Charge ditribution electric-field ditribution UMa Lowell Sanjeev
11 epletion Layer ρ qn E ρ ε de dx 0 < qn ε x < W qn ε qn E( x) ( W x) ε UMa Lowell Sanjeev
12 qn x) dx W W E( x) dx ( W 0 ε 0 qn ε 0 qnw ( W x) d( W x) ε W epletion width W ε ( )/ qn Charge per unit area Q QN W q ε N ( ) UMa Lowell Sanjeev
13 Capacitance er unit area: C Q qε N ε ( ) W Rearranging: C 1 qε ( ) N Or: N qε d 1 ( 1 ) / d C UMa Lowell Sanjeev
14 1/C veru applied voltage for W-Si and W-aA diode UMa Lowell Sanjeev
15 1/C v If traight line contant doping profile lope doping concentration If not traight line, can be ued to find profile Intercept can be ued to find φ Bn φ Bn n + n kt q N ln n i UMa Lowell Sanjeev
16 Current tranport by the thermionic emiion proce Thermal equilibrium forward a revere a UMa Lowell Sanjeev
17 Thermionic emiion Number of electron with enough thermal energy to overcome barrier: n th N C e qφ kt Bn At thermal equilibrium, current going both way i the ame: j j C1 N m m C e q Bn φ kt UMa Lowell Sanjeev
18 Forward Bia Barrier for electron in emiconductor i reduced by F φ kt q C th F Bn e N n ) ( Barrier for electron from metal to emiconductor i the ame Net current: 1 ) ( 1 e C N e C N j j j kt q C kt q C m m Bn F Bn φ φ e e C N j kt q kt q C C C m m F Bn φ UMa Lowell Sanjeev 1 *T A N C C
19 Forward Bia j q kt j e 1 j A φ kt * T e q Bn Effective Richardon Contant A* 4πqm e * k h erive by determining current with integral of velocity and denity of tate j v ( E ) dn ( E ) v ( E ) g ( E ) f ( E ) de UMa Lowell Sanjeev
20 Forward current denity v applied voltage of W-Si and W-aA diode UMa Lowell Sanjeev
21 Thermionic Emiion over the barrier low doping UMa Lowell Sanjeev
22 Tunneling through the barrier high doping UMa Lowell Sanjeev
23 Tunneling through the barrier Narrow depletion width for high doping tunneling From QM 101: Wavefunction i exponential depending on barrier width and height probality of making it to the other ide ~ ψ Ψ ( x, t) e iωt e αx α m ( U E) h I [ ] W m( qφ q)/ ~ exp h Bn W ε ( ) / qn C ( ) ) φbn I ~ exp C 4 mε / h N UMa Lowell Sanjeev
24 Contact reitance Specific Contact Reitance(baed on current denity) R C J J 1 0 For tunneling current through barrier (high doping): ( φ ) C Bn ~ exp N I Ohmic Contact: C φ Bn ~ exp Nh RC UMa Lowell Sanjeev
25 Calculated and meaured value of pecific contact reitance UMa Lowell Sanjeev
26 MESFET UMa Lowell Sanjeev
27 MESFET Qualitative Operation No gate voltage depletion from built-in voltage oitive drain voltage caue revere a Increaed depletion width with increaed R ρ L A L qμ n N Z( a W ) UMa Lowell Sanjeev
28 MESFET Qualitative Operation At higher drain voltage, Wa pinch off at at qnw ε at qn a ε UMa Lowell Sanjeev
29 MESFET Qualitative Operation Above pinchoff voltage, drain current doe not increae oltage at pinch-off point i till dat UMa Lowell Sanjeev
30 MESFET Qualitative Operation Addition of gate voltage (negative) increae baeline depletion width inch-off occur ooner Saturation voltage and current are reduced (narrower channel) at qn a εε UMa Lowell Sanjeev
![I- Characteritic Linear Region d I dr Idy q μ n N Z a [ W (y) ]](/docs-images/74/70756976/images/31-0.jpg "W ( y ) ( ( y) + + ) ε ) qn d qn ε WdW UMa Lowell 10.")
31 I- Characteritic Linear Region d I dr Idy q μ n N Z a [ W (y) ] W ( y ) ( ( y) + + ) ε ) qn d qn ε WdW UMa Lowell Sanjeev
32 I- Characteritic Linear Region [ ] [ ] WdW qn W Z a N q d y W Z a N q dy I n n μ μ ) ( [ ] q n ε μ μ ) ( W WdW a N q I W n ε ) ( 1 W WdW a L I W ( ) ( ) ε μ 1 1 W W W a W L N q I n UMa Lowell Sanjeev
33 I- Characteritic Linear Region qn W ) ( 1 + ε qn W ) ( + + ε I I n a N q Z I μ a qn L ε UMa Lowell Sanjeev ε
34 Normalized ideal current-voltage characteritic of a MESFET with.. UMa Lowell Sanjeev
35 UMa Lowell Sanjeev
36 Tranconductance I I In Saturation: + + at at I I ( ) at I I ( ) at I I UMa Lowell Sanjeev
37 Tranconductance 1 ( ) at I I m I g ( ) ( ) + + m I g * m I g 1 + μ n m L a qn Z g 1 UMa Lowell Sanjeev
38 Equivalent Circuit - High Frequency AC Input tage look like capacitance gate-to-channel Output t capacitance ignored -drain-to-ource capacitance mall UMa Lowell Sanjeev
39 Maximum Frequency (not in aturation) C i i capacitance per unit area and C gate i total capacitance of the gate C C ZL gate i Ff max when gain1 (i out /i in 1) f max C f gate max g πc m gate εs ZL W ZμnqNa L εs πzl W μ qn a π L ε n UMa Lowell Sanjeev
40 elocity Saturation qn W a Z qn A I υ υ ) ( * rain current: Tranconductance W Z W W I I g m ε υ Cutoff Frequency: C g f m max W Z πc gate / max UMa Lowell Sanjeev ( ) L W ZL W Z f S π ε ε π ε υ / / max
41 Figure The drift velocity veru the electric field for electron in variou emiconductor material. UMa Lowell Sanjeev
42 III- MESFET aa and In +Semi-inulating material high peed device (like built-in SOI) +High Electron Molity/Saturation elocity high peed +irect Bandgap photonic device +Heterotructure bandgap engineering -No Simple Oxide MOSFETS not viable no equivalent to SiO UMa Lowell Sanjeev
43 III- Tranitor: aa No imple oxide for OX MOSFETS not widely ued MESFET tructure more common mea tructure depletion mode tranitor Source ate rain Semi-inulating Subtrate UMa Lowell Sanjeev
44 epletion Mode aa MESFET N-type material high electron molity Mea etch for iolation on SI ubtrate Ohmic contact for Source and rain alloyed Shottky contact for ate Ti Receed gate depth determine threhold UMa Lowell Sanjeev
45 aa MESFET Fabrication Si Implant Si N 4 Semi-inulating aa Subtrate epoit Si N 4 layer, implant Si and anneal for form n-type material Can alo grow n-type epi layer by MBE or MOC UMa Lowell Sanjeev
46 N-type aa Semi-inulating aa Subtrate Ohmic contact formation for ource and drain NiAue evaporate Au(88wt%)e(1wt%) then Ni (+Au) anneal l0 min at t450 C in H/N Au react with a from ubtrate a vacancie e fill a vacancie heavy n-type doping low contact reitance ohmic UMa Lowell Sanjeev e doping not uniform preading reitance effect
47 Semi-inulating aa Subtrate ate Rece Etch Wet etching Channel depth determine pinch-off voltage Channel reitance can be monitored in-itu UMa Lowell Sanjeev
48 Semi-inulating aa Subtrate Mea Rece Etch Wet etching Semi-inulating ubtrate for device iolation UMa Lowell Sanjeev
49 Semi-inulating aa Subtrate Shottky ate Electrode depoition Ti/t/Au or Ti/d/Au Almot any metal will form barrier a diffue in many metal Ti contact t or d barrier layer Au added for low reitivity UMa Lowell Sanjeev
50 aa igital Circuit: irect Coupled FET Logic (CFL) lowet power and highet level of integration Ue enhancement and depletion mode tranitor Enhancement mode tranitor made uing thinner gate rece or different doping to change threhold UMa Lowell Sanjeev
51 CFL Fabrication Sequence UMa Lowell Sanjeev
52 CFL Fabrication Sequence(cont.) UMa Lowell Sanjeev
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