The Common-Emitter Amplifier

Size: px
Start display at page:

Download "The Common-Emitter Amplifier"

Transcription

1 c Copyright W. Marshall Leach, Jr., Professor, Georgia Institute of Technology, School of Electrical and Computer Engineering. The Common-Emitter Amplifier Basic Circuit Fig. shows the circuit diagram of a single stage common-emitter amplifier. The object is to solve for the small-signal voltage gain, input resistance, and output resistance. Figure : Single-stage common-emitter amplifier. DC Solution (a) Replace the capacitors with open circuits. Look out of the 3 BJT terminals and make Thévenin equivalent circuits as shown in Fig. 2. V BB = V + R 2 + V R R + R 2 R BB = V EE = V R EE = R E (b) Make an educated guess for V BE. Write the loop equation between the V BB and the V EE nodes. V BB V EE = I B R BB + V BE + I E R EE = I C R BB + V BE + I C R EE (c) Solve the loop equation for the currents. (d) Verify that V CB > 0 for the active mode. I C = I E = I B = V BB V EE V BE R BB / + R EE / V CB = V C V B =(V CC I C R CC ) (V BB I B R BB )=V CC V BB I C (R CC R BB /)

2 Figure 2: Bias circuit. Figure 3: Signal circuit. 2

3 Small-Signal or AC Solutions (a) Redraw the circuit with V + = V =0and all capacitors replaced with short circuits as shown in Fig. 3. (b) Calculate g m, r π, r e,andr 0 from the DC solution. g m = I C V T r π = V T I B r e = V T I E r 0 = V A + V CE I C (c) Replace the circuits looking out of the base and emitter with Thévenin equivalent circuits asshowninfig.4. = R s + R tb = v te =0 R te = R E kr 3 Figure 4: Signal circuit with Thévenin base circuit. Exact Solution This solution is based on the exact equivalent circuits developed in the more advanced notes on the BJT. It treats r 0 as a resistor from collector to emitter without the r 0 approximations. (a) Replace the BJT in Fig. 4 with the Thévenin base circuit and the Norton collector circuit asshowninfig.5. Figure 5: Base and collector equivalent circuits. 3

4 (b) Solve for i c(sc). i c(sc) = G mb = G mb R s + (c) Solve for v o. G mb = r 0 R te / re 0 + R te kr 0 r 0 + R te r 0 e = R tb + r x + + r e v o = i c(sc) r ic kr C kr L = G mb R s + r ic kr C kr L (d) Solve for the voltage gain. r 0 + r 0 ekr te R te / (r 0 e + R te ) = G mb R s + r ic kr C kr L (e) Solve for r in. r in = kr ib r ib = r x + r π + R te ( + ) r 0 + R tc r 0 + R te + R tc (f) Solve for r out. r out = r ic kr C (g) Special Case for R te =0. (h) Special Case for r 0 =. G mb = r 0 e r 0 r ib = r x + r π G mb = r 0 e + R te r ib = r x + r π +(+) R te Example For the CE amplifier of Fig., it is given that R s =5kΩ, R = 20 kω, R 2 = 00 kω, R C =4.3kΩ, R E =5.6kΩ, R 3 = 00 Ω, R L =20kΩ, V + =5V, V = 5 V, V BE =0.65 V, =99, =0.99, r x =20Ω, V A = 00 V and V T =0.025 V. Solve for the gain /,the input resistance r in, and the output resistance r out. The capacitors can be assumed to be ac short circuits at the operating frequency. Solution. For the dc bias solution, replace all capacitors with open circuits. The Thévenin voltage and resistance seen looking out of the base are V BB = V + R 2 + V R R + R 2 =.364 V R BB = =54.55 kω The Thévenin voltage and resistance seen looking out of the emitter are V EE = V and R EE = R E. The bias equation for I E is I E = V BB V EE V BE R BB / ( + )+R EE =2.3 ma 4

5 To test for the active mode, we calculate the collector-base voltage V CB = V C V B = µ V + I E R C V BB I E + R BB =8.52 V Because this is positive, the BJT is biased in its active mode. For the small-signal ac analysis, we need r 0 and r e. To calculate r 0,wefirst calculate the collector-emitter voltage V CE = V CB + V BE =9.7 V It follows that r 0 and r e have the values r 0 = V A + V CE I E =52.8 kω r e = V T I E =.83 Ω For the small-signal analysis, V + and V are zeroed and the three capacitors are replaced with ac short circuits. The Thévenin voltage and resistance seen looking out of the base are given by = R s + =0.96 R tb = R s k =4.58 kω The Thévenin resistances seen looking out of the emitter and the collector are R te = R E kr 3 =98.25 Ω R tc = R C kr L =3.539 kω Next, we calculate r 0 e, G mb, r ic,andr ib. G mb = r 0 e = R tb + r x + + r e =57.83 Ω r 0 R te / re 0 = + R te kr 0 r 0 + R te 57.8 S r 0 + r 0 ekr te R te / (r 0 e + R te ) = 38.6kΩ ( + ) r 0 + R tc r ib = r x +(+) r e + R te r 0 + R te + R tc The output voltage is given by =0.39 kω v o = G mb (r ic kr tc ) = G mb (r ic kr tc ) 0.96 = Thus the voltage gain is A v = The input and output resistances are given by r in = kr ib =8.73 kω r out = r ic kr C =3.539 kω Approximate Solutions These solutions use the r 0 approximations. That is, it is assumed that r 0 = except in calculating r ic.inthiscase,i c(sc) = i 0 c = i 0 e = i b. 5

6 Figure 6: Simplified T model circuit. Simplified T Model Solution (a) After making the Thévenin equivalent circuits looking out of the base and emitter, replace the BJT with the simplified T model as shown in Fig. 6. (b) Solve for i 0 e. i 0 e = re 0 = + R te R s + re 0 + R te (b) Solve for i 0 c and r ic. i 0 c = i 0 e = R s + re 0 + R te r 0 + r 0 ekr te R te / (re 0 + R te ) (c) Solve for v o and /. v o = i c(sc) r ic kr C kr L = R s + re 0 + R te = Note that this is of the form (d) Solve for r out. R s + r 0 e + R te = i0 e i0 c i 0 v o e i 0 c r out = r ic kr C (d) Solve for r ib and r in. Because the base node is absorbed, use the formula for r ib. r ib = r x +(+)(r e + R te ) r in = kr ib Example 2 Use the simplified T-model solutions to calculate the values of A v, r in,andr out for Example. A v = = r ib =.03 kω r in =9.73 kω 38.6kΩ r out =4.7 kω 6

7 π Model Solution (a) After making the Thévenin equivalent circuits looking out of the base and emitter, replace the BJT with the π model as shown in Fig. 7. (b) Solve for i 0 c and r ic. Figure 7: Hybrid π model circuit. = i b (R tb + r x )+v π + i 0 er te = i0 c (R tb + r x )+ i0 c g m + i0 c R te = i 0 c = R tb + r x + + R te g m (c) Solve for v o. r 0 + r 0 ekr te R te / (r 0 e + R te ) v o = i 0 cr C kr L = (d) Solve for the voltage gain. R tb + r x + + R te g m = R s + R tb + r x + + R te g m = R s + R tb + r x + + R te g m This is of the form (e) Solve for r ib and r in. = i0 c v o i 0 c v b = i b (r x + r π )+i 0 er te = i b (r x + r π )+(+) i b R te = i b [r x + r π +(+) R te ] r ib = v b i b = r x + r π +(+) R te 7

8 r in = kr ib (f) Solve for r out. r out = r ic kr C Example 3 Use the π-model solutions to calculate the values of A v, r in,andr out for Example. g m = r π =.83 kω TModelSolution A v = = = r ib =.03 kω 38.6kΩ r in =9.73 kω r out =4.7 kω (a) After making the Thévenin equivalent circuits looking out of the base and emitter, replace the BJTwiththeTmodelasshowninFig.8. (b) Solve for i 0 c and r ic. Figure 8: T model circuit. = i b (R tb + r x )+i 0 e (r e + R te )= i0 c (R tb + r x )+ i0 c (r e + R te )= i 0 c = R tb + r x + r e + R te (c) Solve for v o. r 0 + r 0 ekr te R te / (r 0 e + R te ) v o = i 0 cr C kr L = R tb + r x + r e + R te = R s + R tb + r x + r e + R te 8

9 (d) Solve for the voltage gain. = R s + R tb + r x + r e + R te Note that this is of the form (e) Solve for r ib and r in. = i0 c v o i 0 c v b = i b r x + i 0 e (r e + R te )=i b r x +(+) i b (r e + R te )=i b [r x +(+)(r e + R te )] r ib = v b i b = r x +(+)(r e + R te ) r in = kr ib (f) Solve for r out. r out = r ic kr C Example 4 Use the T-model solutions to calculate the values of A v, r in,andr out for Example. A v = = = r ib =.03 kω 38.6kΩ r in =9.73 kω r out =4.7 kω 9

The BJT Differential Amplifier. Basic Circuit. DC Solution

The BJT Differential Amplifier. Basic Circuit. DC Solution c Copyright 010. W. Marshall Leach, Jr., Professor, Georgia Institute of Technology, School of Electrical and Computer Engineering. The BJT Differential Amplifier Basic Circuit Figure 1 shows the circuit

More information

c Copyright 2009. W. Marshall Leach, Jr., Professor, Georgia Institute of Technology, School of Electrical and Computer Engineering. Feedback Amplifiers CollectionofSolvedProblems A collection of solved

More information

CHAPTER.4: Transistor at low frequencies

CHAPTER.4: Transistor at low frequencies CHAPTER.4: Transistor at low frequencies Introduction Amplification in the AC domain BJT transistor modeling The re Transistor Model The Hybrid equivalent Model Introduction There are three models commonly

More information

EE 321 Analog Electronics, Fall 2013 Homework #8 solution

EE 321 Analog Electronics, Fall 2013 Homework #8 solution EE 321 Analog Electronics, Fall 2013 Homework #8 solution 5.110. The following table summarizes some of the basic attributes of a number of BJTs of different types, operating as amplifiers under various

More information

Bipolar Junction Transistor (BJT) - Introduction

Bipolar Junction Transistor (BJT) - Introduction Bipolar Junction Transistor (BJT) - Introduction It was found in 1948 at the Bell Telephone Laboratories. It is a three terminal device and has three semiconductor regions. It can be used in signal amplification

More information

Tutorial #4: Bias Point Analysis in Multisim

Tutorial #4: Bias Point Analysis in Multisim SCHOOL OF ENGINEERING AND APPLIED SCIENCE DEPARTMENT OF ELECTRICAL AND COMPUTER ENGINEERING ECE 2115: ENGINEERING ELECTRONICS LABORATORY Tutorial #4: Bias Point Analysis in Multisim INTRODUCTION When BJTs

More information

ESE319 Introduction to Microelectronics. BJT Biasing Cont.

ESE319 Introduction to Microelectronics. BJT Biasing Cont. BJT Biasing Cont. Biasing for DC Operating Point Stability BJT Bias Using Emitter Negative Feedback Single Supply BJT Bias Scheme Constant Current BJT Bias Scheme Rule of Thumb BJT Bias Design 1 Simple

More information

Chapter 5. BJT AC Analysis

Chapter 5. BJT AC Analysis Chapter 5. Outline: The r e transistor model CB, CE & CC AC analysis through r e model common-emitter fixed-bias voltage-divider bias emitter-bias & emitter-follower common-base configuration Transistor

More information

EE105 Fall 2014 Microelectronic Devices and Circuits

EE105 Fall 2014 Microelectronic Devices and Circuits EE05 Fall 204 Microelectronic Devices and Circuits Prof. Ming C. Wu wu@eecs.berkeley.edu 5 Sutardja Dai Hall (SDH) Terminal Gain and I/O Resistances of BJT Amplifiers Emitter (CE) Collector (CC) Base (CB)

More information

ESE319 Introduction to Microelectronics Common Emitter BJT Amplifier

ESE319 Introduction to Microelectronics Common Emitter BJT Amplifier Common Emitter BJT Amplifier 1 Adding a signal source to the single power supply bias amplifier R C R 1 R C V CC V CC V B R E R 2 R E Desired effect addition of bias and signal sources Starting point -

More information

Figure 1: MOSFET symbols.

Figure 1: MOSFET symbols. c Copyright 2008. W. Marshall Leach, Jr., Professor, Georgia Institute of Technology, School of Electrical and Computer Engineering. The MOSFET Device Symbols Whereas the JFET has a diode junction between

More information

BJT Biasing Cont. & Small Signal Model

BJT Biasing Cont. & Small Signal Model BJT Biasing Cont. & Small Signal Model Conservative Bias Design (1/3, 1/3, 1/3 Rule) Bias Design Example Small-Signal BJT Models Small-Signal Analysis 1 Emitter Feedback Bias Design R B R C V CC R 1 R

More information

Transistor Characteristics and A simple BJT Current Mirror

Transistor Characteristics and A simple BJT Current Mirror Transistor Characteristics and A simple BJT Current Mirror Current-oltage (I-) Characteristics Device Under Test DUT i v T T 1 R X R X T for test Independent variable on horizontal axis Could force current

More information

Chapter 2 - DC Biasing - BJTs

Chapter 2 - DC Biasing - BJTs Objectives Chapter 2 - DC Biasing - BJTs To Understand: Concept of Operating point and stability Analyzing Various biasing circuits and their comparison with respect to stability BJT A Review Invented

More information

Biasing the CE Amplifier

Biasing the CE Amplifier Biasing the CE Amplifier Graphical approach: plot I C as a function of the DC base-emitter voltage (note: normally plot vs. base current, so we must return to Ebers-Moll): I C I S e V BE V th I S e V th

More information

SOME USEFUL NETWORK THEOREMS

SOME USEFUL NETWORK THEOREMS APPENDIX D SOME USEFUL NETWORK THEOREMS Introduction In this appendix we review three network theorems that are useful in simplifying the analysis of electronic circuits: Thévenin s theorem Norton s theorem

More information

UNIT 4 DC EQUIVALENT CIRCUIT AND NETWORK THEOREMS

UNIT 4 DC EQUIVALENT CIRCUIT AND NETWORK THEOREMS UNIT 4 DC EQUIVALENT CIRCUIT AND NETWORK THEOREMS 1.0 Kirchoff s Law Kirchoff s Current Law (KCL) states at any junction in an electric circuit the total current flowing towards that junction is equal

More information

Chapter 5. Department of Mechanical Engineering

Chapter 5. Department of Mechanical Engineering Source Transformation By KVL: V s =ir s + v By KCL: i s =i + v/r p is=v s /R s R s =R p V s /R s =i + v/r s i s =i + v/r p Two circuits have the same terminal voltage and current Source Transformation

More information

Chapter 2. - DC Biasing - BJTs

Chapter 2. - DC Biasing - BJTs Chapter 2. - DC Biasing - BJTs Objectives To Understand : Concept of Operating point and stability Analyzing Various biasing circuits and their comparison with respect to stability BJT A Review Invented

More information

Chapter 13 Small-Signal Modeling and Linear Amplification

Chapter 13 Small-Signal Modeling and Linear Amplification Chapter 13 Small-Signal Modeling and Linear Amplification Microelectronic Circuit Design Richard C. Jaeger Travis N. Blalock 1/4/12 Chap 13-1 Chapter Goals Understanding of concepts related to: Transistors

More information

University of Pittsburgh

University of Pittsburgh University of Pittsburgh Experiment #8 Lab Report The Bipolar Junction Transistor: Characteristics and Models Submission Date: 11/6/2017 Instructors: Dr. Minhee Yun John Erickson Yanhao Du Submitted By:

More information

ID # NAME. EE-255 EXAM 3 April 7, Instructor (circle one) Ogborn Lundstrom

ID # NAME. EE-255 EXAM 3 April 7, Instructor (circle one) Ogborn Lundstrom ID # NAME EE-255 EXAM 3 April 7, 1998 Instructor (circle one) Ogborn Lundstrom This exam consists of 20 multiple choice questions. Record all answers on this page, but you must turn in the entire exam.

More information

KOM2751 Analog Electronics :: Dr. Muharrem Mercimek :: YTU - Control and Automation Dept. 1 4 DC BIASING BJTS (CONT D II )

KOM2751 Analog Electronics :: Dr. Muharrem Mercimek :: YTU - Control and Automation Dept. 1 4 DC BIASING BJTS (CONT D II ) KOM2751 Analog Electronics :: Dr. Muharrem Mercimek :: YTU - Control and Automation Dept. 1 4 DC BIASING BJTS (CONT D II ) Most of the content is from the textbook: Electronic devices and circuit theory,

More information

figure shows a pnp transistor biased to operate in the active mode

figure shows a pnp transistor biased to operate in the active mode Lecture 10b EE-215 Electronic Devices and Circuits Asst Prof Muhammad Anis Chaudhary BJT: Device Structure and Physical Operation The pnp Transistor figure shows a pnp transistor biased to operate in the

More information

ESE319 Introduction to Microelectronics. Output Stages

ESE319 Introduction to Microelectronics. Output Stages Output Stages Power amplifier classification Class A amplifier circuits Class A Power conversion efficiency Class B amplifier circuits Class B Power conversion efficiency Class AB amplifier circuits Class

More information

Homework Assignment 08

Homework Assignment 08 Homework Assignment 08 Question 1 (Short Takes) Two points each unless otherwise indicated. 1. Give one phrase/sentence that describes the primary advantage of an active load. Answer: Large effective resistance

More information

1. (50 points, BJT curves & equivalent) For the 2N3904 =(npn) and the 2N3906 =(pnp)

1. (50 points, BJT curves & equivalent) For the 2N3904 =(npn) and the 2N3906 =(pnp) HW 3 1. (50 points, BJT curves & equivalent) For the 2N3904 =(npn) and the 2N3906 =(pnp) a) Obtain in Spice the transistor curves given on the course web page except do in separate plots, one for the npn

More information

FYSE400 ANALOG ELECTRONICS

FYSE400 ANALOG ELECTRONICS YSE400 ANALOG ELECTONCS LECTUE 3 Bipolar Sub Circuits 1 BPOLA SUB CCUTS Bipolar Current Sinks and -Sources Transistor operates in forwardactive region. < < sat CE CN max CE < < + BN CN BN max CE N N N

More information

EE-201 Review Exam I. 1. The voltage Vx in the circuit below is: (1) 3V (2) 2V (3) -2V (4) 1V (5) -1V (6) None of above

EE-201 Review Exam I. 1. The voltage Vx in the circuit below is: (1) 3V (2) 2V (3) -2V (4) 1V (5) -1V (6) None of above EE-201, Review Probs Test 1 page-1 Spring 98 EE-201 Review Exam I Multiple Choice (5 points each, no partial credit.) 1. The voltage Vx in the circuit below is: (1) 3V (2) 2V (3) -2V (4) 1V (5) -1V (6)

More information

Section 1: Common Emitter CE Amplifier Design

Section 1: Common Emitter CE Amplifier Design ECE 3274 BJT amplifier design CE, CE with Ref, and CC. Richard Cooper Section 1: CE amp Re completely bypassed (open Loop) Section 2: CE amp Re partially bypassed (gain controlled). Section 3: CC amp (open

More information

Assignment 3 ELEC 312/Winter 12 R.Raut, Ph.D.

Assignment 3 ELEC 312/Winter 12 R.Raut, Ph.D. Page 1 of 3 ELEC 312: ELECTRONICS II : ASSIGNMENT-3 Department of Electrical and Computer Engineering Winter 2012 1. A common-emitter amplifier that can be represented by the following equivalent circuit,

More information

Junction Bipolar Transistor. Characteristics Models Datasheet

Junction Bipolar Transistor. Characteristics Models Datasheet Junction Bipolar Transistor Characteristics Models Datasheet Characteristics (1) The BJT is a threeterminal device, terminals are named emitter, base and collector. Small signals, applied to the base,

More information

DC Biasing. Dr. U. Sezen & Dr. D. Gökçen (Hacettepe Uni.) ELE230 Electronics I 15-Mar / 59

DC Biasing. Dr. U. Sezen & Dr. D. Gökçen (Hacettepe Uni.) ELE230 Electronics I 15-Mar / 59 Contents Three States of Operation BJT DC Analysis Fixed-Bias Circuit Emitter-Stabilized Bias Circuit Voltage Divider Bias Circuit DC Bias with Voltage Feedback Various Dierent Bias Circuits pnp Transistors

More information

BJT Biasing Cont. & Small Signal Model

BJT Biasing Cont. & Small Signal Model BJT Biasing Cont. & Small Signal Model Conservative Bias Design Bias Design Example Small Signal BJT Models Small Signal Analysis 1 Emitter Feedback Bias Design Voltage bias circuit Single power supply

More information

Lecture 7: Transistors and Amplifiers

Lecture 7: Transistors and Amplifiers Lecture 7: Transistors and Amplifiers Hybrid Transistor Model for small AC : The previous model for a transistor used one parameter (β, the current gain) to describe the transistor. doesn't explain many

More information

CE/CS Amplifier Response at High Frequencies

CE/CS Amplifier Response at High Frequencies .. CE/CS Amplifier Response at High Frequencies INEL 4202 - Manuel Toledo August 20, 2012 INEL 4202 - Manuel Toledo CE/CS High Frequency Analysis 1/ 24 Outline.1 High Frequency Models.2 Simplified Method.3

More information

Series & Parallel Resistors 3/17/2015 1

Series & Parallel Resistors 3/17/2015 1 Series & Parallel Resistors 3/17/2015 1 Series Resistors & Voltage Division Consider the single-loop circuit as shown in figure. The two resistors are in series, since the same current i flows in both

More information

The equivalent model of a certain op amp is shown in the figure given below, where R 1 = 2.8 MΩ, R 2 = 39 Ω, and A =

The equivalent model of a certain op amp is shown in the figure given below, where R 1 = 2.8 MΩ, R 2 = 39 Ω, and A = The equivalent model of a certain op amp is shown in the figure given below, where R 1 = 2.8 MΩ, R 2 = 39 Ω, and A = 10 10 4. Section Break Difficulty: Easy Learning Objective: Understand how real operational

More information

As light level increases, resistance decreases. As temperature increases, resistance decreases. Voltage across capacitor increases with time LDR

As light level increases, resistance decreases. As temperature increases, resistance decreases. Voltage across capacitor increases with time LDR LDR As light level increases, resistance decreases thermistor As temperature increases, resistance decreases capacitor Voltage across capacitor increases with time Potential divider basics: R 1 1. Both

More information

Circle the one best answer for each question. Five points per question.

Circle the one best answer for each question. Five points per question. ID # NAME EE-255 EXAM 3 November 8, 2001 Instructor (circle one) Talavage Gray This exam consists of 16 multiple choice questions and one workout problem. Record all answers to the multiple choice questions

More information

At point G V = = = = = = RB B B. IN RB f

At point G V = = = = = = RB B B. IN RB f Common Emitter At point G CE RC 0. 4 12 0. 4 116. I C RC 116. R 1k C 116. ma I IC 116. ma β 100 F 116µ A I R ( 116µ A)( 20kΩ) 2. 3 R + 2. 3 + 0. 7 30. IN R f Gain in Constant Current Region I I I C F

More information

On the Application of Superposition to Dependent Sources in Circuit Analysis

On the Application of Superposition to Dependent Sources in Circuit Analysis 1 On the Application of Superposition to Dependent Sources in Circuit Analysis W Marshall Leach, Jr c Copyright 1994-009 All rights reserved Abstract Many introductory circuits texts state or imply that

More information

EE 330 Lecture 25. Amplifier Biasing (precursor) Two-Port Amplifier Model

EE 330 Lecture 25. Amplifier Biasing (precursor) Two-Port Amplifier Model EE 330 Lecture 25 Amplifier Biasing (precursor) Two-Port Amplifier Model Amplifier Biasing (precursor) V CC R 1 V out V in B C E V EE Not convenient to have multiple dc power supplies Q very sensitive

More information

ELECTRONICS IA 2017 SCHEME

ELECTRONICS IA 2017 SCHEME ELECTRONICS IA 2017 SCHEME CONTENTS 1 [ 5 marks ]...4 2...5 a. [ 2 marks ]...5 b. [ 2 marks ]...5 c. [ 5 marks ]...5 d. [ 2 marks ]...5 3...6 a. [ 3 marks ]...6 b. [ 3 marks ]...6 4 [ 7 marks ]...7 5...8

More information

EE 330 Lecture 25. Amplifier Biasing (precursor) Two-Port Amplifier Model

EE 330 Lecture 25. Amplifier Biasing (precursor) Two-Port Amplifier Model EE 330 Lecture 25 Amplifier Biasing (precursor) Two-Port Amplifier Model Review from Last Lecture Exam Schedule Exam 2 Friday March 24 Review from Last Lecture Graphical Analysis and Interpretation 2 OX

More information

Biasing BJTs CHAPTER OBJECTIVES 4.1 INTRODUCTION

Biasing BJTs CHAPTER OBJECTIVES 4.1 INTRODUCTION 4 DC Biasing BJTs CHAPTER OBJECTIVES Be able to determine the dc levels for the variety of important BJT configurations. Understand how to measure the important voltage levels of a BJT transistor configuration

More information

I. Frequency Response of Voltage Amplifiers

I. Frequency Response of Voltage Amplifiers I. Frequency Response of Voltage Amplifiers A. Common-Emitter Amplifier: V i SUP i OUT R S V BIAS R L v OUT V Operating Point analysis: 0, R s 0, r o --->, r oc --->, R L ---> Find V BIAS such that I C

More information

Homework Assignment 09

Homework Assignment 09 Homework Assignment 09 Question 1 (Short Takes) Two points each unless otherwise indicated. 1. What is the 3-dB bandwidth of the amplifier shown below if r π = 2.5K, r o = 100K, g m = 40 ms, and C L =

More information

Mod. Sim. Dyn. Sys. Amplifiers page 1

Mod. Sim. Dyn. Sys. Amplifiers page 1 AMPLIFIERS A circuit containing only capacitors, amplifiers (transistors) and resistors may resonate. A circuit containing only capacitors and resistors may not. Why does amplification permit resonance

More information

Quick Review. ESE319 Introduction to Microelectronics. and Q1 = Q2, what is the value of V O-dm. If R C1 = R C2. s.t. R C1. Let Q1 = Q2 and R C1

Quick Review. ESE319 Introduction to Microelectronics. and Q1 = Q2, what is the value of V O-dm. If R C1 = R C2. s.t. R C1. Let Q1 = Q2 and R C1 Quick Review If R C1 = R C2 and Q1 = Q2, what is the value of V O-dm? Let Q1 = Q2 and R C1 R C2 s.t. R C1 > R C2, express R C1 & R C2 in terms R C and ΔR C. If V O-dm is the differential output offset

More information

Basic Electronics Prof. Dr. Chitralekha Mahanta Department of Electronics and Communication Engineering Indian Institute of Technology, Guwahati

Basic Electronics Prof. Dr. Chitralekha Mahanta Department of Electronics and Communication Engineering Indian Institute of Technology, Guwahati Basic Electronics Prof. Dr. Chitralekha Mahanta Department of Electronics and Communication Engineering Indian Institute of Technology, Guwahati Module: 2 Bipolar Junction Transistors Lecture-4 Biasing

More information

Chapter 10 AC Analysis Using Phasors

Chapter 10 AC Analysis Using Phasors Chapter 10 AC Analysis Using Phasors 10.1 Introduction We would like to use our linear circuit theorems (Nodal analysis, Mesh analysis, Thevenin and Norton equivalent circuits, Superposition, etc.) to

More information

Capacitors Diodes Transistors. PC200 Lectures. Terry Sturtevant. Wilfrid Laurier University. June 4, 2009

Capacitors Diodes Transistors. PC200 Lectures. Terry Sturtevant. Wilfrid Laurier University. June 4, 2009 Wilfrid Laurier University June 4, 2009 Capacitor an electronic device which consists of two conductive plates separated by an insulator Capacitor an electronic device which consists of two conductive

More information

Mod. Sim. Dyn. Sys. Amplifiers page 1

Mod. Sim. Dyn. Sys. Amplifiers page 1 AMPLIFIERS A circuit containing only capacitors, amplifiers (transistors) and resistors may resonate. A circuit containing only capacitors and resistors may not. Why does amplification permit resonance

More information

Bipolar junction transistors

Bipolar junction transistors Bipolar junction transistors Find parameters of te BJT in CE configuration at BQ 40 µa and CBQ V. nput caracteristic B / µa 40 0 00 80 60 40 0 0 0, 0,5 0,3 0,35 0,4 BE / V Output caracteristics C / ma

More information

55:041 Electronic Circuits The University of Iowa Fall Exam 2

55:041 Electronic Circuits The University of Iowa Fall Exam 2 Exam 2 Name: Score /60 Question 1 One point unless indicated otherwise. 1. An engineer measures the (step response) rise time of an amplifier as t r = 0.35 μs. Estimate the 3 db bandwidth of the amplifier.

More information

Engineering 1620 Spring 2011 Answers to Homework # 4 Biasing and Small Signal Properties

Engineering 1620 Spring 2011 Answers to Homework # 4 Biasing and Small Signal Properties Engineering 60 Spring 0 Answers to Homework # 4 Biasing and Small Signal Properties.).) The in-band Thevenin equivalent source impedance is the parallel combination of R, R, and R3. ( In-band implies the

More information

(Refer Slide Time: 1:41)

(Refer Slide Time: 1:41) Analog Electronic Circuits Professor S. C. Dutta Roy Department of Electrical Engineering Indian Institute of Technology Delhi Lecture no 13 Module no 01 Midband Analysis of CB and CC Amplifiers We are

More information

Electronics II. Midterm #2

Electronics II. Midterm #2 The University of Toledo EECS:3400 Electronics I Section sums_elct7.fm - StudentName Electronics II Midterm # Problems Points. 8. 3. 7 Total 0 Was the exam fair? yes no The University of Toledo sums_elct7.fm

More information

UNIVERSITY F P RTLAND Sch l f Engineering

UNIVERSITY F P RTLAND Sch l f Engineering UNIVERSITY F P RTLAND Sch l f Engineering EE271-Electrical Circuits Laboratory Spring 2004 Dr. Aziz S. Inan & Dr. Joseph P. Hoffbeck Lab Experiment #4: Electrical Circuit Theorems - p. 1 of 5 - Electrical

More information

Operational Amplifiers

Operational Amplifiers Operational Amplifiers A Linear IC circuit Operational Amplifier (op-amp) An op-amp is a high-gain amplifier that has high input impedance and low output impedance. An ideal op-amp has infinite gain and

More information

Midterm Exam (closed book/notes) Tuesday, February 23, 2010

Midterm Exam (closed book/notes) Tuesday, February 23, 2010 University of California, Berkeley Spring 2010 EE 42/100 Prof. A. Niknejad Midterm Exam (closed book/notes) Tuesday, February 23, 2010 Guidelines: Closed book. You may use a calculator. Do not unstaple

More information

Electronics II. Midterm II

Electronics II. Midterm II The University of Toledo su7ms_elct7.fm - Electronics II Midterm II Problems Points. 7. 7 3. 6 Total 0 Was the exam fair? yes no The University of Toledo su7ms_elct7.fm - Problem 7 points Equation (-)

More information

Electronics II. Midterm #1

Electronics II. Midterm #1 The University of Toledo EECS:3400 Electronics I su3ms_elct7.fm Section Electronics II Midterm # Problems Points. 5. 6 3. 9 Total 0 Was the exam fair? yes no The University of Toledo su3ms_elct7.fm Problem

More information

Notes for course EE1.1 Circuit Analysis TOPIC 10 2-PORT CIRCUITS

Notes for course EE1.1 Circuit Analysis TOPIC 10 2-PORT CIRCUITS Objectives: Introduction Notes for course EE1.1 Circuit Analysis 4-5 Re-examination of 1-port sub-circuits Admittance parameters for -port circuits TOPIC 1 -PORT CIRCUITS Gain and port impedance from -port

More information

EE 3120 Electric Energy Systems Study Guide for Prerequisite Test Wednesday, Jan 18, pm, Room TBA

EE 3120 Electric Energy Systems Study Guide for Prerequisite Test Wednesday, Jan 18, pm, Room TBA EE 3120 Electric Energy Systems Study Guide for Prerequisite Test Wednesday, Jan 18, 2006 6-7 pm, Room TBA First retrieve your EE2110 final and other course papers and notes! The test will be closed book

More information

CHAPTER 7 - CD COMPANION

CHAPTER 7 - CD COMPANION Chapter 7 - CD companion 1 CHAPTER 7 - CD COMPANION CD-7.2 Biasing of Single-Stage Amplifiers This companion section to the text contains detailed treatments of biasing circuits for both bipolar and field-effect

More information

KOM2751 Analog Electronics :: Dr. Muharrem Mercimek :: YTU - Control and Automation Dept. 1 4 DC BIASING BJTS (CONT D)

KOM2751 Analog Electronics :: Dr. Muharrem Mercimek :: YTU - Control and Automation Dept. 1 4 DC BIASING BJTS (CONT D) KOM2751 Analog Electronics :: Dr. Muharrem Mercimek :: YTU Control and Automation Dept. 1 4 DC BIASING BJTS (CONT D) Most of the content is from the textbook: Electronic devices and circuit theory, Robert

More information

ECE-343 Test 2: Mar 21, :00-8:00, Closed Book. Name : SOLUTION

ECE-343 Test 2: Mar 21, :00-8:00, Closed Book. Name : SOLUTION ECE-343 Test 2: Mar 21, 2012 6:00-8:00, Closed Book Name : SOLUTION 1. (25 pts) (a) Draw a circuit diagram for a differential amplifier designed under the following constraints: Use only BJTs. (You may

More information

Electric Circuits II Sinusoidal Steady State Analysis. Dr. Firas Obeidat

Electric Circuits II Sinusoidal Steady State Analysis. Dr. Firas Obeidat Electric Circuits II Sinusoidal Steady State Analysis Dr. Firas Obeidat 1 Table of Contents 1 2 3 4 5 Nodal Analysis Mesh Analysis Superposition Theorem Source Transformation Thevenin and Norton Equivalent

More information

Lecture 24 Multistage Amplifiers (I) MULTISTAGE AMPLIFIER

Lecture 24 Multistage Amplifiers (I) MULTISTAGE AMPLIFIER Lecture 24 Multistage Amplifiers (I) MULTISTAGE AMPLIFIER Outline. Introduction 2. CMOS multi-stage voltage amplifier 3. BiCMOS multistage voltage amplifier 4. BiCMOS current buffer 5. Coupling amplifier

More information

Class AB Output Stage

Class AB Output Stage Class AB Output Stage Class AB amplifier Operation Multisim Simulation - VTC Class AB amplifier biasing Widlar current source Multisim Simulation - Biasing 1 Class AB Operation v I V B (set by V B ) Basic

More information

Electronics II. Midterm #2

Electronics II. Midterm #2 The University of Toledo EECS:3400 Electronics I su4ms_elct7.fm Section Electronics II Midterm # Problems Points. 8. 7 3. 5 Total 0 Was the exam fair? yes no The University of Toledo su4ms_elct7.fm Problem

More information

Thevenin Norton Equivalencies - GATE Study Material in PDF

Thevenin Norton Equivalencies - GATE Study Material in PDF Thevenin Norton Equivalencies - GATE Study Material in PDF In these GATE 2018 Notes, we explain the Thevenin Norton Equivalencies. Thevenin s and Norton s Theorems are two equally valid methods of reducing

More information

mith College Computer Science CSC270 Spring 16 Circuits and Systems Lecture Notes Week 3 Dominique Thiébaut

mith College Computer Science CSC270 Spring 16 Circuits and Systems Lecture Notes Week 3 Dominique Thiébaut mith College Computer Science CSC270 Spring 16 Circuits and Systems Lecture Notes Week 3 Dominique Thiébaut dthiebaut@smith.edu Crash Course in Electricity and Electronics Zero Physics background expected!

More information

Electronics II. Final Examination

Electronics II. Final Examination The University of Toledo f17fs_elct27.fm 1 Electronics II Final Examination Problems Points 1. 11 2. 14 3. 15 Total 40 Was the exam fair? yes no The University of Toledo f17fs_elct27.fm 2 Problem 1 11

More information

POLYTECHNIC UNIVERSITY Electrical Engineering Department. EE SOPHOMORE LABORATORY Experiment 2 DC circuits and network theorems

POLYTECHNIC UNIVERSITY Electrical Engineering Department. EE SOPHOMORE LABORATORY Experiment 2 DC circuits and network theorems POLYTECHNIC UNIVERSITY Electrical Engineering Department EE SOPHOMORE LABORATORY Experiment 2 DC circuits and network theorems Modified for Physics 18, Brooklyn College I. Overview of Experiment In this

More information

ECE-342 Test 3: Nov 30, :00-8:00, Closed Book. Name : Solution

ECE-342 Test 3: Nov 30, :00-8:00, Closed Book. Name : Solution ECE-342 Test 3: Nov 30, 2010 6:00-8:00, Closed Book Name : Solution All solutions must provide units as appropriate. Unless otherwise stated, assume T = 300 K. 1. (25 pts) Consider the amplifier shown

More information

Multistage Amplifier Frequency Response

Multistage Amplifier Frequency Response Multistage Amplifier Frequency Response * Summary of frequency response of single-stages: CE/CS: suffers from Miller effect CC/CD: wideband -- see Section 0.5 CB/CG: wideband -- see Section 0.6 (wideband

More information

Introduction to AC Circuits (Capacitors and Inductors)

Introduction to AC Circuits (Capacitors and Inductors) Introduction to AC Circuits (Capacitors and Inductors) Amin Electronics and Electrical Communications Engineering Department (EECE) Cairo University elc.n102.eng@gmail.com http://scholar.cu.edu.eg/refky/

More information

Study Notes on Network Theorems for GATE 2017

Study Notes on Network Theorems for GATE 2017 Study Notes on Network Theorems for GATE 2017 Network Theorems is a highly important and scoring topic in GATE. This topic carries a substantial weight age in GATE. Although the Theorems might appear to

More information

The current source. The Active Current Source

The current source. The Active Current Source V ref + - The current source Minimum noise euals: Thevenin Norton = V ref DC current through resistor gives an increase of /f noise (granular structure) Accuracy of source also determined by the accuracy

More information

Device Physics: The Bipolar Transistor

Device Physics: The Bipolar Transistor Monolithic Amplifier Circuits: Device Physics: The Bipolar Transistor Chapter 4 Jón Tómas Guðmundsson tumi@hi.is 2. Week Fall 2010 1 Introduction In analog design the transistors are not simply switches

More information

Electronic Circuits 1. Transistor Devices. Contents BJT and FET Characteristics Operations. Prof. C.K. Tse: Transistor devices

Electronic Circuits 1. Transistor Devices. Contents BJT and FET Characteristics Operations. Prof. C.K. Tse: Transistor devices Electronic Circuits 1 Transistor Devices Contents BJT and FET Characteristics Operations 1 What is a transistor? Three-terminal device whose voltage-current relationship is controlled by a third voltage

More information

CHAPTER.6 :TRANSISTOR FREQUENCY RESPONSE

CHAPTER.6 :TRANSISTOR FREQUENCY RESPONSE CHAPTER.6 :TRANSISTOR FREQUENCY RESPONSE To understand Decibels, log scale, general frequency considerations of an amplifier. low frequency analysis - Bode plot low frequency response BJT amplifier Miller

More information

D C Circuit Analysis and Network Theorems:

D C Circuit Analysis and Network Theorems: UNIT-1 D C Circuit Analysis and Network Theorems: Circuit Concepts: Concepts of network, Active and passive elements, voltage and current sources, source transformation, unilateral and bilateral elements,

More information

Electronic Circuits. Bipolar Junction Transistors. Manar Mohaisen Office: F208 Department of EECE

Electronic Circuits. Bipolar Junction Transistors. Manar Mohaisen Office: F208   Department of EECE Electronic Circuits Bipolar Junction Transistors Manar Mohaisen Office: F208 Email: manar.subhi@kut.ac.kr Department of EECE Review of Precedent Class Explain the Operation of the Zener Diode Explain Applications

More information

Electronic Circuits Summary

Electronic Circuits Summary Electronic Circuits Summary Andreas Biri, D-ITET 6.06.4 Constants (@300K) ε 0 = 8.854 0 F m m 0 = 9. 0 3 kg k =.38 0 3 J K = 8.67 0 5 ev/k kt q = 0.059 V, q kt = 38.6, kt = 5.9 mev V Small Signal Equivalent

More information

CHAPTER 4. Circuit Theorems

CHAPTER 4. Circuit Theorems CHAPTER 4 Circuit Theorems The growth in areas of application of electrical circuits has led to an evolution from simple to complex circuits. To handle such complexity, engineers over the years have developed

More information

Chapter 2. Engr228 Circuit Analysis. Dr Curtis Nelson

Chapter 2. Engr228 Circuit Analysis. Dr Curtis Nelson Chapter 2 Engr228 Circuit Analysis Dr Curtis Nelson Chapter 2 Objectives Understand symbols and behavior of the following circuit elements: Independent voltage and current sources; Dependent voltage and

More information

OUTCOME 3 - TUTORIAL 2

OUTCOME 3 - TUTORIAL 2 Unit : Unit code: QCF evel: 4 Credit value: 15 SYABUS Engineering Science /601/1404 OUTCOME 3 - TUTORIA Be able to apply DC theory to solve electrical and electronic engineering problems DC electrical

More information

TWO-PORT NETWORKS. Enhancing Your Career. Research is to see what everybody else has seen, and think what nobody has thought.

TWO-PORT NETWORKS. Enhancing Your Career. Research is to see what everybody else has seen, and think what nobody has thought. C H A P T E R TWO-PORT NETWORKS 8 Research is to see what everybody else has seen, and think what nobody has thought. Albert Szent-Gyorgyi Enhancing Your Career Career in Education While two thirds of

More information

One-Port Networks. One-Port. Network

One-Port Networks. One-Port. Network TwoPort s Definitions Impedance Parameters dmittance Parameters Hybrid Parameters Transmission Parameters Cascaded TwoPort s Examples pplications OnePort s v i' 1 OnePort pair of terminals at which a signal

More information

CARLETON UNIVERSITY. FINAL EXAMINATION December DURATION 3 HOURS No. of Students 130

CARLETON UNIVERSITY. FINAL EXAMINATION December DURATION 3 HOURS No. of Students 130 ALETON UNIVESITY FINAL EXAMINATION December 005 DUATION 3 HOUS No. of Students 130 Department Name & ourse Number: Electronics ELE 3509 ourse Instructor(s): Prof. John W. M. ogers and alvin Plett AUTHOIZED

More information

Lecture 6: Impedance (frequency dependent. resistance in the s- world), Admittance (frequency. dependent conductance in the s- world), and

Lecture 6: Impedance (frequency dependent. resistance in the s- world), Admittance (frequency. dependent conductance in the s- world), and Lecture 6: Impedance (frequency dependent resistance in the s- world), Admittance (frequency dependent conductance in the s- world), and Consequences Thereof. Professor Ray, what s an impedance? Answers:

More information

Refinements to Incremental Transistor Model

Refinements to Incremental Transistor Model Refinements to Incremental Transistor Model This section presents modifications to the incremental models that account for non-ideal transistor behavior Incremental output port resistance Incremental changes

More information

R 2, R 3, and R 4 are in parallel, R T = R 1 + (R 2 //R 3 //R 4 ) + R 5. C-C Tsai

R 2, R 3, and R 4 are in parallel, R T = R 1 + (R 2 //R 3 //R 4 ) + R 5. C-C Tsai Chapter 07 Series-Parallel Circuits The Series-Parallel Network Complex circuits May be separated both series and/or parallel elements Combinations which are neither series nor parallel To analyze a circuit

More information

Thevenin equivalent circuits

Thevenin equivalent circuits Thevenin equivalent circuits We have seen the idea of equivalency used in several instances already. 1 2 1 2 same as 1 2 same as 1 2 R 3 same as = 0 V same as 0 A same as same as = EE 201 Thevenin 1 The

More information

Problem Set 5 Solutions

Problem Set 5 Solutions University of California, Berkeley Spring 01 EE /0 Prof. A. Niknejad Problem Set 5 Solutions Please note that these are merely suggested solutions. Many of these problems can be approached in different

More information

Electronic Circuits. Transistor Bias Circuits. Manar Mohaisen Office: F208 Department of EECE

Electronic Circuits. Transistor Bias Circuits. Manar Mohaisen Office: F208   Department of EECE lectronic ircuits Transistor Bias ircuits Manar Mohaisen Office: F208 mail: manar.subhi@kut.ac.kr Department of Review of the Precedent Lecture Bipolar Junction Transistor (BJT) BJT haracteristics and

More information