TWO-PORT. C.T. Pan 1. C.T. Pan
|
|
- Isabella Blair
- 6 years ago
- Views:
Transcription
1 TWO-PORT CRCUTS C.T. Pan 5. Definition of Two-Port Circuits 5. Classification of Two-Port Parameters 5.3 Finding Two-Port Parameters 5.4 Analysis of the Terminated Two-Port Circuit 5.5 nterconnected Two-Port Circuits C.T. Pan
2 5. Definition of Two-Port Circuits Consider a linear two-terminal terminal circuit N consisting of no independent sources as follows : For a, b two terminals, if in = out, then it constitutes a port. C.T. Pan 3 5. Definition of Two-Port Circuits Now consider the following linear four-terminal circuit containing no independent sources. - ' ' - with = ' = ' Then terminals a, b constitute the input port and terminals c, d constitute the output port. C.T. Pan 4
3 5. Definition of Two-Port Circuits - ' ' - No external connections exist between the input and output ports. The two-port model is used to describe the performance of a circuit in terms of the voltage and current at its input and output ports. C.T. Pan 5 5. Definition of Two-Port Circuits Two-port circuits are useful in communications, control systems, power systems, and electronic systems. They are also useful for facilitating cascaded design of more complex systems. C.T. Pan 6
4 5. Classification of Two-Port Parameters There are four terminal variables, namely,,,, only two of them are independent. Hence, there are only six possible sets of two-port parameters. C = = 6 C.T. Pan 7 5. Classification of Two-Port Parameters () The impedance, or Z, parameters N z z, Zij : in = Ω z z For two-port networks, four parameters are generally required to represent the circuit. C.T. Pan 8
5 5. Classification of Two-Port Parameters () The admittance, or Y, parameters N y y = y y, Y : ij in S C.T. Pan 9 5. Classification of Two-Port Parameters (3) The hybrid, or h, parameters N h h = h h h, h : : in Ω in S h & h scalars C.T. Pan 0
6 5. Classification of Two-Port Parameters (4) The inverse hybrid, or g, parameters N g : in S g g, g : in = g g Ω g & g scalars C.T. Pan 5. Classification of Two-Port Parameters (5) The transmission, or a, parameters N a a = a a a, a : : in Ω in S a & a scalars C.T. Pan
7 5. Classification of Two-Port Parameters (6) The inverse transmission, or b, parameters N b b = b b b, b : : in Ω in S b & b scalars C.T. Pan Finding Two-Port Parameters Method : Calculate or measure by invoking appropriate short-circuit and open- circuit conditions at the input and output ports. Method : Derive the parameters from another set of two-port parameters. C.T. Pan 4
8 5.3 Finding Two-Port Parameters Method : Choose Z parameters as an illustration. =z z =z z when = 0, output port is open \ =z, z =, input impedance =0 =z, \ z =, transfer impedance =0 C.T. Pan Finding Two-Port Parameters When = 0, input port is open \ =z, z =, transfer impedance =0 \ =z, z =, output impedance =0 When the two-port does not contain any dependent source, then z =z. C.T. Pan 6
9 5.3 Finding Two-Port Parameters z & z are called driving-point impedances. z & z are called transfer impedances. When z =z, the two-port circuit is said to be symmetrical. When z =z, the two-port circuit is called a reciprocal circuit. C.T. Pan Finding Two-Port Parameters Example : Find the Z parameters of the T-networkT Assign mesh currents as shown : ØRR R øøø Øø Œ = R RR œœ 3 œ Œ œ º ߺ ß º ß \ z =RR z =z =R z =RR 3 C.T. Pan 8
10 5.3 Finding Two-Port Parameters A two-port can be replaced by the following equivalent circuit. =z z =z z C.T. Pan Finding Two-Port Parameters n case the two-port is reciprocal, z then it can also be represented by the T-equivalent circuit. =z, C.T. Pan 0
11 5.3 Finding Two-Port Parameters Example : Find the Z parameters Assign mesh currents as follows and write down the mesh equation. C.T. Pan 5.3 Finding Two-Port Parameters = A B C D = 0 3 C.T. Pan
12 5.3 Finding Two-Port Parameters A B 3= C D 3=0... ()... () From (), - 3 =-D C... (3) Substitute (3) into () - - A -BD C = A-BD C = [ ] Z = ABD C C.T. Pan Finding Two-Port Parameters Example 3: Find the Z parameters of the following circuit by definition of Z parameters. 8Ω 4Ω 8Ω C.T. Pan 4
13 5.3 Finding Two-Port Parameters Step: Let = 0 and apply = 0 8Ω 4Ω 8Ω 0 = /(4 Ω //(8 8) Ω ) = 64 8 = = z = = = Ω 0 5 z 8 = = = = Ω 5 z C.T. Pan Finding Two-Port Parameters Step: Let = 0 and apply = 8Ω 0 4Ω 8Ω 5 = /(8 Ω //(8 4) Ω ) = 4 4 = = z = = Ω = = = = Ω 3 5 z 6/5 8/5 [ Z] = Ω 8/5 4/5 C.T. Pan 6 z
14 5.3 Finding Two-Port Parameters Example 4: Containing dependent source case R R α Step: Let = 0 and apply R R = 0 α C.T. Pan Finding Two-Port Parameters R R = 0 α C.T. Pan 8 = = α R R α = α z = = R α z = = α
15 5.3 Finding Two-Port Parameters Step: Let = 0 and apply R R = 0 α = 0 = R = 0 = = z 0 R z = = R, α 0 [ Z ] = α R C.T. Pan Finding Two-Port Parameters Example 5: Find the y parameters of the following circuit. G b Ga Use nodal analysis Gc G b G a c G C.T. Pan 30
16 5.3 Finding Two-Port Parameters G b G a c G Nodal equation Ga Gb Gb Gb Gb G c = Ga Gb Gb [ y] = in S unit Gb Gb G c C.T. Pan Note that y = y =G C.T. Pan 3 b 5.3 Finding Two-Port Parameters A linear reciprocal two-port can be represented by the following equivalent Π circuit. y y y y y C.T. Pan 3
17 5.3 Finding Two-Port Parameters Similarly, a linear two-port can also be represented by the following equivalent circuit with dependent sources. y y y y = y y = y y C.T. Pan Finding Two-Port Parameters A linear two-port can be represented by the following equivalent circuit. h h h h = h h = h h C.T. Pan 34
18 5.3 Finding Two-Port Parameters Example 6 : Find the transmission parameters of the following circuits (a), (b) a a = a a C.T. Pan Finding Two-Port Parameters For circuit (a) and when =0 a = = 0 = = 0 a = = = C.T. Pan 36
19 5.3 Finding Two-Port Parameters For circuit (a) and when =0 = = R a = = = R a = = = a a R a a 0 C.T. Pan Finding Two-Port Parameters Similarly, for circuit (b) a a 0 a a = G C.T. Pan 38
20 5.3 Finding Two-Port Parameters Method () The 6 sets of parameters relate the same input and output terminal variables, hence they are interrelated. A systematical procedure for obtaining a set of parameters from another one is given as follows for reference. C.T. Pan Finding Two-Port Parameters Step: : Arrange the given two port parameters in the following standard form: k k k 3 k 4 =0 k k k 3 k 4 =0 Step: : Separate the independent variables and the dependent variables of the desired parameter set. Step3: : Find the solution of the dependent variable vector. C.T. Pan 40
21 5.3 Finding Two-Port Parameters Example 7: Given Z parameters, find h parameters. Step From =z z =z z =z z z n the standard form -z 0 -z =0 0 z - z =0 z z C.T. Pan Finding Two-Port Parameters Step z z 0 0 z = z Step3 solve z z 0 = 0 z z h h = h h C.T. Pan 4
22 5.3 Finding Two-Port Parameters A different solution approach = z z...( A) = z z...( B) From ( B )onecan obtain z =...( C) From ( A)and( C) z z = h h = z z ( h h ) = ( z z h ) z h h C.T. Pan Finding Two-Port Parameters Example 8 : Two sets of measurements are made on a two-port resistive circuit. The first set is made with port open, and the second set is made with port short-circuited. The results are as follows : Port open =0m =0μA =-40 Port short-circuited =4m C.T. Pan 44 =0μA =ma Find h parameters from there measurements.
23 5.3 Finding Two-Port Parameters = h h (A) = h h (B) When port is short circuited, =0 =4m, =0μA, =ma Hence, from (A) and (B) 4m = h (0μA) 0 ma = h (0μA) 0 h =. KΩ K, h = 50 (C) C.T. Pan Finding Two-Port Parameters When port is open, =0 =0m, =0μA, =-40 Hence, from (A), (B) and (C) 0m =. KΩ K (0μA) h (-40) 0 = 50 (0μA) h (-40) h = 5x0-5, h =.5 μs C.T. Pan 46
24 5.4 Analysis of the Terminated Two-Port Circuit Reciprocal Theorem ersion : For a reciprocal circuit, the interchange of an ideal voltage source at one port with an ideal ammeter at the other port produces the same ammeter reading. C.T. Pan Analysis of the Terminated Two-Port Circuit =z z =z z Q S A =, =-, =0 =z z (- S A 0=z z (- zs \ = z z -z A A ) ) C.T. Pan 48
25 5.4 Analysis of the Terminated Two-Port Circuit Q =0, A =-, = S \ \ 0=z (- ) z A =z (- ) z S A z S A= = A zz -z C.T. Pan Analysis of the Terminated Two-Port Circuit The effect of reciprocity on the two-port parameters is given by z =z, or y =y a a -a a =, or b b -b b =, or h =-h, or g =-g C.T. Pan 50
26 5.4 Analysis of the Terminated Two-Port Circuit Examples of symmetric two ports. C.T. Pan Analysis of the Terminated Two-Port Circuit C.T. Pan 5
27 5.4 Analysis of the Terminated Two-Port Circuit There are mainly 6 interested characteristics for a terminated two-port circuit in practical applications. C.T. Pan Analysis of the Terminated Two-Port Circuit input impedance / output current Thevenin equivalent looking into port. current gain / voltage gain / voltage gain / g C.T. Pan 54
28 5.4 Analysis of the Terminated Two-Port Circuit The derivation of any one of the desired expressions involves the algebraic manipulation of the two-port equations along with the two constraint equations imposed at input and output terminals. C.T. Pan Analysis of the Terminated Two-Port Circuit Example 9 : Use Z parameters as an illustration g - Z g [ ] Z Z L two-port equation = z z LL ( A) = z z LL ( B) C.T. Pan 56
29 5.4 Analysis of the Terminated Two-Port Circuit input port constraint ( ) g = z g LL C Output port constraint g - Z g [ ] Z Z L ( ) =z L LL D () Find Z in = / From (D) and (B), z = z z L LL ( E) C.T. Pan Analysis of the Terminated Two-Port Circuit Substitute (E) into (A) Z in zz = z z z () Find : From (A) and (C) L Z g g [ ] Z Z L g z = z z g LL ( F) Substitute (F) into (E) zg = ( z z )( z z ) z z g L LL ( G) C.T. Pan 58
30 5.4 Analysis of the Terminated Two-Port Circuit (3) Find TH and Z TH at port : With =0, from (A), (B) and (F) z = z = LL ( H) z = z = z g z From (C), (H) and () g = = LLLLLLL ( ) TH g zg z C.T. Pan 59 z 5.4 Analysis of the Terminated Two-Port Circuit With g =0, then ( ) =z g LL J From (A) and (J), = z z z z z ZTH = = z z z g g (4) Find current gain / z From (E), = z z L C.T. Pan 60
31 5.4 Analysis of the Terminated Two-Port Circuit (5) Find voltage gain / : From (B) and (D) = z z = ( ) zl z z L zl z From (A), (D), and (K) LLLLLLL (K) ( z z z z z ) L = zl z z z = z z z z z L L LLLLL( L) C.T. Pan Analysis of the Terminated Two-Port Circuit (6) Find / g : Q Zin = = ( z Z ) g g g in zzl = ( z z )( z z ) z z g L C.T. Pan 6
32 5.4 Analysis of the Terminated Two-Port Circuit Example 0 : Given the following circuit, find when R L =5KΩ b = 0 b =3000Ω b = ms b =0. C.T. Pan Analysis of the Terminated Two-Port Circuit Example 0: (cont.) = b b...( A) = b b...( B ) = ( C ) = R L...( D ) Substitute (C) and (D) into (A) and (B) to eliminate and 3 0 = 0...( E ) = ( F ) 3 3 From (E) and (F), 5000 = = C.T. Pan 64
33 5.5 nterconnected Two-Port Circuits Two-port circuits may be interconnected in five ways : () in series () in parallel (3) in series-parallel (4) in parallel-series (5) in cascade C.T. Pan nterconnected Two-Port Circuits () Series connection = a = b = a = b [ ] Z = Z a Zb = a b = a b C.T. Pan 66
34 5.5 nterconnected Two-Port Circuits () Parallel connection = a b = a b [ ] Y = Y a Yb = a = b = a = b C.T. Pan nterconnected Two-Port Circuits (3) Series-parallel connection a a - a b N a a b b N b b - = a = b = a b [ ] h = h a hb = a b = a = b C.T. Pan 68
35 5.5 nterconnected Two-Port Circuits (4) Parallel-series connection = a b = a = b g = g g a b = a = b = a b C.T. Pan nterconnected Two-Port Circuits (5) Cascade connection a a Na a a b b Nb b b = a a = b = b = a b = - a = b a a a a a a ' ' " " ' ' " " a a = a a a a C.T. Pan 70
36 5.5 nterconnected Two-Port Circuits Example : Find the [Z] and [Y] parameters of the following two port network. R 4 R R 3 R - - C.T. Pan nterconnected Two-Port Circuits Example : (cont.) For [y] parameters : a R R 3 a - R - R 4 C.T. Pan 7
37 5.5 nterconnected Two-Port Circuits Example : (cont.) y y a = a y y a a = R (R R ) = R 3 = R (R R ) = R 3 3 R R 3 y R R 3 RR y R R a R R y = y = = - y = - y R R R R C.T. Pan nterconnected Two-Port Circuits Example : (cont.) y y b = b y y b b y = = y R 4 y = y = = - R 4 y = y y a b C.T. Pan 74
38 5.5 nterconnected Two-Port Circuits Example : (cont.) For [z] parameters: C.T. Pan nterconnected Two-Port Circuits Example : (cont.) a b a b b a a b z = R (R R ) 3 4 Z = R (R R ) 3 4 Z = Z = Z Z = Z = R Z = Z = R R RR 4 C.T. Pan 76 [ ] Z = Z a Zb
39 5.5 nterconnected Two-Port Circuits Example : Find the a parameters = a a = a a C.T. Pan nterconnected Two-Port Circuits Example 3 : A common emitter circuit b hie hre b = h h c fe oe c h :base input impedence ie h :reverse voltage gain re h :forward current gain fe h :output admittance oe C.T. Pan 78
40 Summary Objective : Understand the definition of 6 sets of two port parameters. Objective : Be able to find any set of two-port parameters. Objective 3 : Be able to analyze a terminated two-port circuit. C.T. Pan 79 Summary Objective 4 : Understand the reciprocal theorem for two-port circuits. Objective 5 : Know how to analyze an interconnected two-port circuits. C.T. Pan 80
41 Summary Problem : Due within one week. C.T. Pan 8
Electric Circuit Theory
Electric Circuit Theory Nam Ki Min nkmin@korea.ac.kr 010-9419-2320 Chapter 18 Two-Port Circuits Nam Ki Min nkmin@korea.ac.kr 010-9419-2320 Contents and Objectives 3 Chapter Contents 18.1 The Terminal Equations
More informationA two-port network is an electrical network with two separate ports
5.1 Introduction A two-port network is an electrical network with two separate ports for input and output. Fig(a) Single Port Network Fig(b) Two Port Network There are several reasons why we should study
More informationNotes for course EE1.1 Circuit Analysis TOPIC 10 2-PORT CIRCUITS
Objectives: Introduction Notes for course EE1.1 Circuit Analysis 4-5 Re-examination of 1-port sub-circuits Admittance parameters for -port circuits TOPIC 1 -PORT CIRCUITS Gain and port impedance from -port
More informationTwo-Port Networks Admittance Parameters CHAPTER16 THE LEARNING GOALS FOR THIS CHAPTER ARE THAT STUDENTS SHOULD BE ABLE TO:
CHAPTER16 Two-Port Networks THE LEARNING GOALS FOR THIS CHAPTER ARE THAT STUDENTS SHOULD BE ABLE TO: Calculate the admittance, impedance, hybrid, and transmission parameter for two-port networks. Convert
More informationTwo Port Network. Ram Prasad Sarkar
Two Port Ram Prasad Sarkar 0 Two Post : Post nput port Two Post Fig. Port Output port A network which has two terminals (one port) on the one side and another two terminals on the opposite side forms a
More informationEE 205 Dr. A. Zidouri. Electric Circuits II. Two-Port Circuits Two-Port Parameters. Lecture #42
EE 05 Dr. A. Zidouri Electric Circuits Two-Port Circuits Two-Port Parameters Lecture #4-1 - EE 05 Dr. A. Zidouri The material to be covered in this lecture is as follows: o ntroduction to two-port circuits
More informationTWO-PORT NETWORKS. Enhancing Your Career. Research is to see what everybody else has seen, and think what nobody has thought.
C H A P T E R TWO-PORT NETWORKS 8 Research is to see what everybody else has seen, and think what nobody has thought. Albert Szent-Gyorgyi Enhancing Your Career Career in Education While two thirds of
More informationTwo Port Networks. Definition of 2-Port Network A two-port network is an electrical network with two separate ports for input and output
Two Port Networks Definition of 2-Port Network A two-port network is an electrical network with two separate ports for input and output What is a Port? It is a pair of terminals through which a current
More informationChapter 5. Department of Mechanical Engineering
Source Transformation By KVL: V s =ir s + v By KCL: i s =i + v/r p is=v s /R s R s =R p V s /R s =i + v/r s i s =i + v/r p Two circuits have the same terminal voltage and current Source Transformation
More informationOne-Port Networks. One-Port. Network
TwoPort s Definitions Impedance Parameters dmittance Parameters Hybrid Parameters Transmission Parameters Cascaded TwoPort s Examples pplications OnePort s v i' 1 OnePort pair of terminals at which a signal
More informationCHAPTER.4: Transistor at low frequencies
CHAPTER.4: Transistor at low frequencies Introduction Amplification in the AC domain BJT transistor modeling The re Transistor Model The Hybrid equivalent Model Introduction There are three models commonly
More informationTwo-Port Networks Introduction
Two-Port Networks ntroduction n general, a network ma have n ports. The current entering one terminal leaves through the other terminal so that the net current entering all ports equals zero. Thus, a two-port
More informationBasic. Theory. ircuit. Charles A. Desoer. Ernest S. Kuh. and. McGraw-Hill Book Company
Basic C m ш ircuit Theory Charles A. Desoer and Ernest S. Kuh Department of Electrical Engineering and Computer Sciences University of California, Berkeley McGraw-Hill Book Company New York St. Louis San
More informationUNIT 4 DC EQUIVALENT CIRCUIT AND NETWORK THEOREMS
UNIT 4 DC EQUIVALENT CIRCUIT AND NETWORK THEOREMS 1.0 Kirchoff s Law Kirchoff s Current Law (KCL) states at any junction in an electric circuit the total current flowing towards that junction is equal
More informationSinusoidal Steady State Analysis (AC Analysis) Part I
Sinusoidal Steady State Analysis (AC Analysis) Part I Amin Electronics and Electrical Communications Engineering Department (EECE) Cairo University elc.n102.eng@gmail.com http://scholar.cu.edu.eg/refky/
More informationTWO PORT NETWORKS Introduction: A port is normally referred to a pair of terminals of a network through which we can have access to network either for a source for measuring an output We have already seen
More informationChapter 10 AC Analysis Using Phasors
Chapter 10 AC Analysis Using Phasors 10.1 Introduction We would like to use our linear circuit theorems (Nodal analysis, Mesh analysis, Thevenin and Norton equivalent circuits, Superposition, etc.) to
More informationSinusoidal Steady State Analysis (AC Analysis) Part II
Sinusoidal Steady State Analysis (AC Analysis) Part II Amin Electronics and Electrical Communications Engineering Department (EECE) Cairo University elc.n102.eng@gmail.com http://scholar.cu.edu.eg/refky/
More informationExperiment 9 Equivalent Circuits
Experiment 9 Equivalent Circuits Name: Jason Johnson Course/Section: ENGR 361-04 Date Performed: November 15, 2001 Date Submitted: November 29, 2001 In keeping with the honor code of the School of Engineering,
More informationModule 2. DC Circuit. Version 2 EE IIT, Kharagpur
Module 2 DC Circuit Lesson 5 Node-voltage analysis of resistive circuit in the context of dc voltages and currents Objectives To provide a powerful but simple circuit analysis tool based on Kirchhoff s
More informationLab #8 Two Port Networks
Cir cuit s 212 Lab Lab #8 Two Port Networks Network parameters are used to characterize a device. Given the network parameters of a device, the voltage and current characteristics of the device can be
More informationElectric Circuits II Sinusoidal Steady State Analysis. Dr. Firas Obeidat
Electric Circuits II Sinusoidal Steady State Analysis Dr. Firas Obeidat 1 Table of Contents 1 2 3 4 5 Nodal Analysis Mesh Analysis Superposition Theorem Source Transformation Thevenin and Norton Equivalent
More informationNETWORK ANALYSIS ( ) 2012 pattern
PRACTICAL WORK BOOK For Academic Session 0 NETWORK ANALYSIS ( 0347 ) 0 pattern For S.E. (Electrical Engineering) Department of Electrical Engineering (University of Pune) SHREE RAMCHANDRA COLLEGE OF ENGG.
More informationNetworks and Systems Prof. V. G. K. Murti Department of Electrical Engineering Indian Institution of Technology, Madras
Networks and Systems Prof. V. G. K. Murti Department of Electrical Engineering Indian Institution of Technology, Madras Lecture - 32 Network Function (3) 2-port networks: Symmetry Equivalent networks Examples
More informationIXBT12N300 IXBH12N300
High Voltage, High Gain BIMOSFET TM Monolithic Bipolar MOS Transistor S 11 = 3V = A (sat) 3.2V TO-26 (IXBT) Symbol Test Conditions Maximum Ratings S = 25 C to 15 C 3 V V CGR = 25 C to 15 C, R GE = 1MΩ
More informationThevenin equivalent circuits
Thevenin equivalent circuits We have seen the idea of equivalency used in several instances already. 1 2 1 2 same as 1 2 same as 1 2 R 3 same as = 0 V same as 0 A same as same as = EE 201 Thevenin 1 The
More informationChapter 10: Sinusoidal Steady-State Analysis
Chapter 10: Sinusoidal Steady-State Analysis 1 Objectives : sinusoidal functions Impedance use phasors to determine the forced response of a circuit subjected to sinusoidal excitation Apply techniques
More informationSingle- and Multiport Networks. RF Electronics Spring, 2018 Robert R. Krchnavek Rowan University
Single- and Multiport Networks RF Electronics Spring, 208 Robert R. Krchnavek Rowan University Objectives Generate an understanding of the common network representations of Z, Y, h, and ABCD. To be able
More informationBFF1303: ELECTRICAL / ELECTRONICS ENGINEERING. Alternating Current Circuits : Basic Law
BFF1303: ELECTRICAL / ELECTRONICS ENGINEERING Alternating Current Circuits : Basic Law Ismail Mohd Khairuddin, Zulkifil Md Yusof Faculty of Manufacturing Engineering Universiti Malaysia Pahang Alternating
More informationChapter 2 Voltage-, Current-, and Z-source Converters
Chapter 2 Voltage-, Current-, and Z-source Converters Some fundamental concepts are to be introduced in this chapter, such as voltage sources, current sources, impedance networks, Z-source, two-port network,
More informationChapter 10: Sinusoidal Steady-State Analysis
Chapter 10: Sinusoidal Steady-State Analysis 10.1 10.2 10.3 10.4 10.5 10.6 10.9 Basic Approach Nodal Analysis Mesh Analysis Superposition Theorem Source Transformation Thevenin & Norton Equivalent Circuits
More informationIXBT24N170 IXBH24N170
High Voltage, High Gain BIMOSFET TM Monolithic Bipolar MOS Transistor IXBT24N17 IXBH24N17 S 11 = 1 = 24A (sat) 2. TO-26 (IXBT) Symbol Test Conditions Maximum Ratings S = 25 C to 15 C 17 V V CGR = 25 C
More informationChapter 9 Balanced Faults, Part II. 9.4 Systematic Fault Analysis Using Bus Impedance Matrix
Chapter 9 Balanced Faults, Part II 9.4 Systematic Fault Analysis Using Bus Impedance Matrix In the previous analysis we employed the Thevenin model and ound the Thevenin voltage and impedance by means
More informationThevenin Norton Equivalencies - GATE Study Material in PDF
Thevenin Norton Equivalencies - GATE Study Material in PDF In these GATE 2018 Notes, we explain the Thevenin Norton Equivalencies. Thevenin s and Norton s Theorems are two equally valid methods of reducing
More informationLABORATORY MODULE ELECTRIC CIRCUIT
LABORATORY MODULE ELECTRIC CIRCUIT HIGH VOLTAGE AND ELECTRICAL MEASUREMENT LAB ELECTRICAL ENGINEERING DEPARTMENT FACULTY OF ENGINEERING UNIVERSITAS INDONESIA DEPOK 2018 MODULE 1 LABORATORY BRIEFING All
More informationChapter 2. Engr228 Circuit Analysis. Dr Curtis Nelson
Chapter 2 Engr228 Circuit Analysis Dr Curtis Nelson Chapter 2 Objectives Understand symbols and behavior of the following circuit elements: Independent voltage and current sources; Dependent voltage and
More informationScattering Parameters
Berkeley Scattering Parameters Prof. Ali M. Niknejad U.C. Berkeley Copyright c 2016 by Ali M. Niknejad September 7, 2017 1 / 57 Scattering Parameters 2 / 57 Scattering Matrix Voltages and currents are
More informationSome of the different forms of a signal, obtained by transformations, are shown in the figure. jwt e z. jwt z e
Transform methods Some of the different forms of a signal, obtained by transformations, are shown in the figure. X(s) X(t) L - L F - F jw s s jw X(jw) X*(t) F - F X*(jw) jwt e z jwt z e X(nT) Z - Z X(z)
More informationMicrowave Network Analysis
Microwave Network Analysis S R Zinka zinka@hyderabadbits-pilaniacin Department of Electrical & Electronics Engineering BITS Pilani, Hyderbad Campus May 7, 2015 RF & Microwave Engineering, Dept of EEE,
More informationMAE140 - Linear Circuits - Winter 09 Midterm, February 5
Instructions MAE40 - Linear ircuits - Winter 09 Midterm, February 5 (i) This exam is open book. You may use whatever written materials you choose, including your class notes and textbook. You may use a
More informationIXBH42N170 IXBT42N170
High Voltage, High Gain BIMOSFET TM Monolithic Bipolar MOS Transistor S = V = 42A (sat) 2.8V Symbol Test Conditions Maximum Ratings TO-247 (IXBH) S = 25 C to 1 C V V CGR T J = 25 C to 1 C, R GE = 1MΩ V
More informationIXYN80N90C3H1 V CES = 900V I C V XPT TM IGBT GenX3 TM w/ Diode. = 70A V CE(sat) 2.7V t fi(typ) = 86ns. Advance Technical Information
9V XPT TM IGBT GenX3 TM w/ Diode High-Speed IGBT for - khz Switching Advance Technical Information IXYNN9C3H S = 9V 9 = 7A (sat).7v t fi(typ) = ns E Symbol Test Conditions Maximum Ratings S = C to C 9
More informationAnalog Circuits and Systems
Analog Circuits and Systems Prof. K Radhakrishna Rao Lecture 5 Analog Signal Processing using One Port Networks, Passive Two Ports and Ideal Amplifiers 1 One Port Devices Passive devices like R, L, C and
More informationCHAPTER FOUR CIRCUIT THEOREMS
4.1 INTRODUCTION CHAPTER FOUR CIRCUIT THEOREMS The growth in areas of application of electric circuits has led to an evolution from simple to complex circuits. To handle the complexity, engineers over
More information6. MESH ANALYSIS 6.1 INTRODUCTION
6. MESH ANALYSIS INTRODUCTION PASSIVE SIGN CONVENTION PLANAR CIRCUITS FORMATION OF MESHES ANALYSIS OF A SIMPLE CIRCUIT DETERMINANT OF A MATRIX CRAMER S RULE GAUSSIAN ELIMINATION METHOD EXAMPLES FOR MESH
More information1.7 Delta-Star Transformation
S Electronic ircuits D ircuits 8.7 Delta-Star Transformation Fig..(a) shows three resistors R, R and R connected in a closed delta to three terminals, and, their numerical subscripts,, and, being opposite
More informationCircuit Theorems Overview Linearity Superposition Source Transformation Thévenin and Norton Equivalents Maximum Power Transfer
Circuit Theorems Overview Linearity Superposition Source Transformation Thévenin and Norton Equivalents Maximum Power Transfer J. McNames Portland State University ECE 221 Circuit Theorems Ver. 1.36 1
More informationThe Impedance Matrix
0/0/09 The mpedance Matrix.doc /7 The mpedance Matrix Consider the -port microwave device shown below: z ( z ) z z port z z port 0 -port 0 microwave 0 device P z z P z port z P z ( z ) z port 0 ( z ) z
More informationTransistor amplifiers: Biasing and Small Signal Model
Transistor amplifiers: iasing and Small Signal Model Transistor amplifiers utilizing JT or FT are similar in design and analysis. Accordingly we will discuss JT amplifiers thoroughly. Then, similar FT
More informationD C Circuit Analysis and Network Theorems:
UNIT-1 D C Circuit Analysis and Network Theorems: Circuit Concepts: Concepts of network, Active and passive elements, voltage and current sources, source transformation, unilateral and bilateral elements,
More informationLecture 7: Transistors and Amplifiers
Lecture 7: Transistors and Amplifiers Hybrid Transistor Model for small AC : The previous model for a transistor used one parameter (β, the current gain) to describe the transistor. doesn't explain many
More informationChapter 5 Objectives
Chapter 5 Engr228 Circuit Analysis Dr Curtis Nelson Chapter 5 Objectives State and apply the property of linearity State and apply the property of superposition Investigate source transformations Define
More informationMMIX4B22N300 V CES. = 3000V = 22A V CE(sat) 2.7V I C90
Advance Technical Information High Voltage, High Gain BIMOSFET TM Monolithic Bipolar MOS Transistor (Electrically Isolated Tab) C G EC3 Symbol Test Conditions Maximum Ratings G3 C2 G2 E2C V CES = 25 C
More informationNetwork Topology-2 & Dual and Duality Choice of independent branch currents and voltages: The solution of a network involves solving of all branch currents and voltages. We know that the branch current
More informationNETWORK THEORY BEES2211
NETWORK THEORY BEES Prepared by Dr. R.Behera Ms. R.Pradhan Department of Electrical Engineering, I.G.I.T, Sarang, Dhenkanal MODULE NETWORK TOPOLOGY. Introduction: When all the elements in a network are
More informationIXYH40N120C3D1 V CES
V XPT TM IGBT GenX3 TM w/ Diode High-Speed IGBT for - khz Switching IXYHNC3D S = V 9 = A (sat).v t fi(typ) = 38ns Symbol Test Conditions Maximum Ratings S = C to C V V CGR = C to C, R GE = MΩ V V GES Continuous
More informationIXYX25N250CV1 IXYX25N250CV1HV
High Voltage XPT TM IGBT w/ Diode Preliminary Technical Information IXYX5N5CV1 IXYX5N5CV1HV S 11 = 5V = 5A (sat).v = ns t fi(typ) PLUS7 (IXYX) Symbol Test Conditions Maximum Ratings S = 5 C to 175 C 5
More informationModule 13: Network Analysis and Directional Couplers
Module 13: Network Analysis and Directional Couplers 13.2 Network theory two port networks, S-parameters, Z-parameters, Y-parameters The study of two port networks is important in the field of electrical
More informationLecture 37: Frequency response. Context
EECS 05 Spring 004, Lecture 37 Lecture 37: Frequency response Prof J. S. Smith EECS 05 Spring 004, Lecture 37 Context We will figure out more of the design parameters for the amplifier we looked at in
More informationIXGH48N60A3D C
GenX TM V IGBT w/diode Ultra Low Vsat PT IGBT for up to khz switching IXGH8NAD S = V = 8A (sat).v TO-7 AD Symbol Test Conditions Maximum Ratings S = C to C V V CGR = C to C, R GE = MΩ V V GES Continuous
More informationLecture Notes on DC Network Theory
Federal University, Ndufu-Alike, Ikwo Department of Electrical/Electronics and Computer Engineering (ECE) Faculty of Engineering and Technology Lecture Notes on DC Network Theory Harmattan Semester by
More informationIXYL40N250CV1 V CES. High Voltage XPT TM IGBT w/ Diode = 2500V I C110. = 40A V CE(sat) 4.0V = 134ns. t fi(typ) Advance Technical Information
High Voltage XPT TM IGBT w/ Diode Advance Technical Information IXYLN2CV1 S = 2V 11 = A (sat).v = 13ns t fi(typ) (Electrically Isolated Tab) ISOPLUS i-pak TM Symbol Test Conditions Maximum Ratings S =
More informationIXYN82N120C3H1 V CES
V XPT TM IGBT GenX3 TM w/ Diode High-Speed IGBT for - khz Switching IXYNNC3H S = V = A (sat) 3.V t fi(typ) = 93ns SOT-B, minibloc E33 Symbol Test Conditions Maximum Ratings S = C to C V V CGR = C to C,
More informationIXXH75N60C3D1 V CES = 600V I C110. XPT TM 600V IGBT GenX3 TM w/ Diode. = 75A V CE(sat) 2.3V t fi(typ) = 75ns
XPT TM 6V IGBT GenX TM w/ Diode Extreme Light Punch Through IGBT for -6 khz Switching IXXH7N6CD S = 6V = 7A (sat).v t fi(typ) = 7ns Symbol Test Conditions Maximum Ratings S = C to 7 C 6 V V CGR = C to
More informationChapter - 1 Direct Current Circuits
Chapter - 1 Direct Current Circuits RESISTANCE KIRKOFFS LAW and LOOP-MESH METHOD VOLTAGE DIVIDER INTERNAL RESISTANCE and OUTPUT IMPEDANCE HOW TO MEASURE OUTPUT IMPEDANCE OF A DEVICE THEVENIN's THEOREM
More informationMMIX4B12N300 V CES = 3000V. = 11A V CE(sat) 3.2V. High Voltage, High Gain BIMOSFET TM Monolithic Bipolar MOS Transistor
High Voltage, High Gain BIMOSFET TM Monolithic Bipolar MOS Transistor Preliminary Technical Information V CES = 3V 11 = 11A V CE(sat) 3.2V C1 C2 (Electrically Isolated Tab) G1 E1C3 G2 E2C G3 G E3E C1 C2
More informationXPT TM 600V IGBT GenX3 TM w/diode MMIX1X200N60B3H1 = 600V I C110 V CES. = 72A V CE(sat) 1.7V t fi(typ) = 110ns. Preliminary Technical Information
XPT TM 6V IGBT GenX3 TM w/diode (Electrically Isolated Tab) Preliminary Technical Information MMIXXN6B3H S = 6V = 7A (sat).7v t fi(typ) = ns Extreme Light Punch Through IGBT for -3kHz Switching Symbol
More informationIXBX50N360HV. = 3600V = 50A V CE(sat) 2.9V. BiMOSFET TM Monolithic Bipolar MOS Transistor High Voltage, High Frequency. Advance Technical Information
BiMOSFET TM Monolithic Bipolar MOS Transistor High Voltage, High Frequency Advance Technical Information S = 3V = A (sat) 2.9V Symbol Test Conditions Maximum Ratings S = 25 C to C 3 V V CGR = 25 C to C,
More informationIXXK200N60B3 IXXX200N60B3
XPT TM 6V IGBTs GenX3 TM Extreme Light Punch Through IGBT for -3kHz Switching Preliminary Technical Information S = 6V = A (sat).7v t fi(typ) = ns TO-6 (IXXK) Symbol Test Conditions Maximum Ratings S =
More informationForward-Active Terminal Currents
Forward-Active Terminal Currents Collector current: (electron diffusion current density) x (emitter area) diff J n AE qd n n po A E V E V th ------------------------------ e W (why minus sign? is by def.
More informationIXYH40N120C3 V CES = 1200V I C V XPT TM IGBT GenX3 TM. = 40A V CE(sat) 4.0V t fi(typ) = 38ns. Preliminary Technical Information
Preliminary Technical Information 12V XPT TM IGBT GenX3 TM High-Speed IGBT for 2- khz Switching IXYHN12C3 S = 12V 11 = A (sat).v t fi(typ) = 38ns Symbol Test Conditions Maximum Ratings S = 2 C to 17 C
More informationChapter 10 Sinusoidal Steady State Analysis Chapter Objectives:
Chapter 10 Sinusoidal Steady State Analysis Chapter Objectives: Apply previously learn circuit techniques to sinusoidal steady-state analysis. Learn how to apply nodal and mesh analysis in the frequency
More informationModule 4. Single-phase AC circuits. Version 2 EE IIT, Kharagpur
Module 4 Single-phase circuits ersion EE T, Kharagpur esson 6 Solution of urrent in Parallel and Seriesparallel ircuits ersion EE T, Kharagpur n the last lesson, the following points were described:. How
More information2 NETWORK FORMULATION
NTWRK FRMUATN NTRDUCTRY RMARKS For performing any power system studies on the digital computer, the first step is to construct a suitable mathematical model of the power system network The mathematical
More information0-2 Operations with Complex Numbers
Simplify. 1. i 10 2. i 2 + i 8 3. i 3 + i 20 4. i 100 5. i 77 esolutions Manual - Powered by Cognero Page 1 6. i 4 + i 12 7. i 5 + i 9 8. i 18 Simplify. 9. (3 + 2i) + ( 4 + 6i) 10. (7 4i) + (2 3i) 11.
More informationIXBK55N300 IXBX55N300
High Voltage, High Gain BiMOSFET TM Monolithic Bipolar MOS Transistor IXBK55N3 IXBX55N3 V CES = 3V 11 = 55A V CE(sat) 3.2V TO-264 (IXBK) Symbol Test Conditions Maximum Ratings V CES = 25 C to 15 C 3 V
More informationIMPEDANCE and NETWORKS. Transformers. Networks. A method of analysing complex networks. Y-parameters and S-parameters
IMPEDANCE and NETWORKS Transformers Networks A method of analysing complex networks Y-parameters and S-parameters 1 ENGN4545/ENGN6545: Radiofrequency Engineering L#7 Transformers Combining the effects
More informationElectric Circuits I. Midterm #1 Examination
EECS:2300, Electric Circuits I s8ms_elci7.fm - Electric Circuits I Midterm # Examination Problems Points. 4 2. 6 3. 5 Total 5 Was the exam fair? yes no EECS:2300, Electric Circuits I s8ms_elci7.fm - 2
More informationChapter 3. Loop and Cut-set Analysis
Chapter 3. Loop and Cut-set Analysis By: FARHAD FARADJI, Ph.D. Assistant Professor, Electrical Engineering, K.N. Toosi University of Technology http://wp.kntu.ac.ir/faradji/electriccircuits2.htm References:
More information0-2 Operations with Complex Numbers
Simplify. 1. i 10 1 2. i 2 + i 8 0 3. i 3 + i 20 1 i esolutions Manual - Powered by Cognero Page 1 4. i 100 1 5. i 77 i 6. i 4 + i 12 2 7. i 5 + i 9 2i esolutions Manual - Powered by Cognero Page 2 8.
More informationAdjoint networks and other elements of circuit theory. E416 4.Adjoint networks
djoint networks and other elements of circuit theory One-port reciprocal networks one-port network is reciprocal if: V I I V = Where and are two different tests on the element Example: a linear impedance
More informationSAMPLE EXAMINATION PAPER
IMPERIAL COLLEGE LONDON Design Engineering MEng EXAMINATIONS 2016 For Internal Students of the Imperial College of Science, Technology and Medicine This paper is also taken for the relevant examination
More informationVI. Transistor amplifiers: Biasing and Small Signal Model
VI. Transistor amplifiers: iasing and Small Signal Model 6.1 Introduction Transistor amplifiers utilizing JT or FET are similar in design and analysis. Accordingly we will discuss JT amplifiers thoroughly.
More informationLecture 12 Date:
Lecture 12 Date: 09.02.2017 Microstrip Matching Networks Series- and Shunt-stub Matching Quarter Wave Impedance Transformer Microstrip Line Matching Networks In the lower RF region, its often a standard
More informationMultistage Amplifier Frequency Response
Multistage Amplifier Frequency Response * Summary of frequency response of single-stages: CE/CS: suffers from Miller effect CC/CD: wideband -- see Section 0.5 CB/CG: wideband -- see Section 0.6 (wideband
More informationIXYK100N120B3 IXYX100N120B3
V XPT TM IGBTs GenX3 TM Extreme Light Punch Through IGBT for 5-3 khz Switching Preliminary Technical Information IXYKNB3 IXYXNB3 S = V 11 = A (sat).v t fi(typ) = ns TO- (IXYK) Symbol Test Conditions Maximum
More informationNetworks and Systems Prof. V. G. K. Murti Department of Electrical Engineering Indian Institute of Technology, Madras
Networks and Systems Prof. V. G. K. Murti Department of Electrical Engineering Indian Institute of Technology, Madras Lecture - 34 Network Theorems (1) Superposition Theorem Substitution Theorem The next
More informationExperimental and Analytical Studies on Lightning Surge Response of 500kV Transmission Tower
Experimental and Analytical Studies on Lightning Surge Response of 500kV Transmission Tower H. Motoyama, CRIEPI, Japan motoyama@criepi.denken.or.jp Y. Kinoshita, Chube Electric Power Co., Inc., Japan K.
More informationIXYH10N170CV1 V CES = 1700V I C110. High Voltage XPT TM IGBT w/ Diode. = 10A V CE(sat) 3.8V = 70ns. t fi(typ) Advance Technical Information TO-247 AD
High Voltage XPT TM IGBT w/ Diode Advance Technical Information IXYHN7CV V CES = 7V = A V CE(sat).V = 7ns t fi(typ) Symbol Test Conditions Maximum Ratings V CES = C to 7 C 7 V V CGR = C to 7 C, R GE =
More informationIXBK55N300 IXBX55N300
High Voltage, High Gain BiMOSFET TM Monolithic Bipolar MOS Transistor V CES = V 11 = 55A V CE(sat) 3.2V TO-264 (IXBK) Symbol Test Conditions Maximum Ratings V CES = 25 C to 15 C V V CGR = 25 C to 15 C,
More informationIXYH16N250CV1HV. High Voltage XPT TM IGBT w/ Diode V CES I C110. = 2500V = 16A V CE(sat) 4.0V = 250ns. t fi(typ) Advance Technical Information
High Voltage XPT TM IGBT w/ Diode Advance Technical Information IXYH1N5CV1HV S 11 = 5V = 1A (sat).v = 5ns t fi(typ) Symbol Test Conditions Maximum Ratings S = 5 C to 175 C 5 V V CGR = 5 C to 175 C, R GE
More informationVoltage Dividers, Nodal, and Mesh Analysis
Engr228 Lab #2 Voltage Dividers, Nodal, and Mesh Analysis Name Partner(s) Grade /10 Introduction This lab exercise is designed to further your understanding of the use of the lab equipment and to verify
More informationEECE 2150 Circuits and Signals, Biomedical Applications Final Exam Section 3
EECE 2150 Circuits and Signals, Biomedical Applications Final Exam Section 3 Instructions: Closed book, closed notes; Computers and cell phones are not allowed You may use the equation sheet provided but
More informationCURRENT SOURCES EXAMPLE 1 Find the source voltage Vs and the current I1 for the circuit shown below SOURCE CONVERSIONS
CURRENT SOURCES EXAMPLE 1 Find the source voltage Vs and the current I1 for the circuit shown below EXAMPLE 2 Find the source voltage Vs and the current I1 for the circuit shown below SOURCE CONVERSIONS
More informationThe equivalent model of a certain op amp is shown in the figure given below, where R 1 = 2.8 MΩ, R 2 = 39 Ω, and A =
The equivalent model of a certain op amp is shown in the figure given below, where R 1 = 2.8 MΩ, R 2 = 39 Ω, and A = 10 10 4. Section Break Difficulty: Easy Learning Objective: Understand how real operational
More informationStudy Notes on Network Theorems for GATE 2017
Study Notes on Network Theorems for GATE 2017 Network Theorems is a highly important and scoring topic in GATE. This topic carries a substantial weight age in GATE. Although the Theorems might appear to
More informationMicrowave Network Analysis
Prof. Dr. Mohammad Tariqul Islam titareq@gmail.my tariqul@ukm.edu.my Microwave Network Analysis 1 Text Book D.M. Pozar, Microwave engineering, 3 rd edition, 2005 by John-Wiley & Sons. Fawwaz T. ILABY,
More informationAssignment 3 ELEC 312/Winter 12 R.Raut, Ph.D.
Page 1 of 3 ELEC 312: ELECTRONICS II : ASSIGNMENT-3 Department of Electrical and Computer Engineering Winter 2012 1. A common-emitter amplifier that can be represented by the following equivalent circuit,
More informationIXGK75N250 IXGX75N250
High Voltage IGBTs For Capacitor Discharge Applications Preliminary Technical Information IXGKN25 IXGXN25 S = 25V 11 = A (sat) 2.7V TO-264 (IXGK) Symbol Test Conditions Maximum Ratings S = 25 C to 15 C
More informationACEPACK 2 converter inverter brake, 1200 V, 25 A trench gate field-stop IGBT M series, soft diode and NTC
Datasheet ACPACK 2 converter inverter brake, 12 V, 25 A trench gate field-stop IGBT M series, soft diode and NTC Features ACPACK 2 ACPACK 2 power module DBC Cu Al 2 O 3 Cu Converter inverter brake topology
More information