ELE46703 TEST #1 Take-Home Solutions Prof. Guvench...
|
|
|
- Alfred Willis
- 6 years ago
- Views:
Transcription
1 ELE46703 TEST #1 Take-Home Solutions Prof. Guvench... Problem 1 : Light Emitting Diode (60 pts.) Consider a GaAs pn junction which has the following properties. N a cm -3 (p-side), N d cm -3 (n-side), B m 3 s -1, cross sectional area A 1 mm 2. a. What is the diode current components due to diffusion I (P-side), I (N-side) in the P and N neutral regions at 300 K when the forward voltage across the diode is 1.1 V? b. What is the built-in potential? Calculate the thickness of the space charge (depletion) regions across the junction at V0 and at V1.1V? Calculate at 1.1V the recombination currents (in the space charge layers), I r(in Wp) and I r(in Wn). c. At this bias point, how many photons, in each region of the diode, are generated per unit time? Label these as I λ (P-side), I λ (N-side), I λ (in Wp) and I λ (in Wn). If only 5% of these can be transmitted out, what is the total optical power output, PλoutTOTAL in watts and external power efficiency, η Pλout TOTAL/of this LED? Note that Pλout 5% of (photon energy. I λ TOTAL) (20% extra) Bonus* Repeat the above calculations for a range of 0.8 < V < 1.2 V and plot on semi-log scale, All components of I vs V including ITOTAL, All components of Iλ vs V including ITOTAL, All components of Pλout vs V including PλoutTOTAL. Note: All calculations below are done by using MKS units. Data given/found are written/converted to MKS before use. Make a note of it. GaAs: kt A m /m3 B m3/s V ε o E G 1.42 ev ε GaAs 13.2 µm 10 6 ns 10 9 N++ Side P Side m m-3 2 p no 2 n po
2 µ nn µ pn µ np µ pp D pn kt µ pn D np kt µ np 1 1 τ pn τ np BN D BN A L pn I pn D pn τ pn L np D np τ np A D pn p no exp V 1 A D np n po 1 I np exp V 1 L pn kt L np kt I difftotal I pn + I np m m-3 p no n po 324 µ nn 0.24 µ pn µ np 0.7 µ pp D pn D np τ pn τ np L pn µm 0.24 L np µm I pn I np I difftotal Problem 1.b Recombination Currents in The Space Charge Layers From the Class notes or the textbook: V 0.0, V Bi kt ln V( V) V Bi V 2
3 V N ( V) V( V) + V P ( V) V( V) + W N ( V) 2 ε o ε GaAs V N ( V) N D W P ( V) 2 ε o ε GaAs V P ( V) N A I rwn ( V) A W N ( V) exp 2 τ pn V 2kT I rwp ( V) A W P ( V) exp 2 τ np V 2kT I rtotal ( V) I rwn ( V) + I rwp ( V) I pdiffn ( V) A D pn p no exp V L pn kt 1 I ndiffp ( V) A D np n po exp V L np kt 1 I DiffTotal ( V) I pdiffn ( V) + I ndiffp ( V) I λdiffn ( V) I pdiffn ( V) I λdiffp ( V) I ndiffp ( V) I λrwn ( V) I rwn ( V) I λrwp ( V) I rwp ( V) I Total ( V) I rtotal ( V) + I DiffTotal ( V) ( ) P λouttotal ( V) 0.05 E G + kt I Total ( V) η Ext ( V) P λouttotal ( V) VI Total ( V) Results: V Bi For: V V( V) V N ( V) W N ( V) I rwn ( V) V P ( V) W P ( V) I rwp ( V)
4 Note that most of the actios on the lowly doped P side I pdiffn ( V) I ndiffp ( V) I λdiffn ( V) I λrwn ( V) I λdiffp ( V) I λrwp ( V) I Total ( V) I DiffTotal ( V) I rtotal ( V) P λouttotal ( V) η Ext ( V ) BONUS Plots From the Class notes or the textbook: V 0.4, V Bi kt ln 2 V( V) V Bi V
5 V N ( V) V( V) + V P ( V) V( V) + W N ( V) 2 ε o ε GaAs V N ( V) N D W P ( V) 2 ε o ε GaAs V P ( V) N A I rwn ( V) A W N ( V) exp 2 τ pn V 2kT I rwp ( V) A W P ( V) exp 2 τ np V 2kT I rtotal ( V) I rwn ( V) + I rwp ( V) I pdiffn ( V) A D pn p no exp V L pn kt 1 I ndiffp ( V) A D np n po exp V L np kt 1 I DiffTotal ( V) I pdiffn ( V) + I ndiffp ( V) I λdiffn ( V) I pdiffn ( V) I λdiffp ( V) I ndiffp ( V) I λrwn ( V) I rwn ( V) I λrwp ( V) I rwp ( V) I Total ( V) I rtotal ( V) + I DiffTotal ( V) ( ) P λouttotal ( V) 0.05 E G + kt I Total ( V) η Ext ( V) P λouttotal ( V) VI Total ( V)
6 I Total ( V) I DiffTotal ( V) I rtotal ( V) I ndiffp ( V) I pdiffn ( V) I rwn ( V) I rwp ( V) V Note that all photons generated, Iλ, and all optical power output values are simply proportional to the electric current component plotted above, the plots generated for those would be identical to the plots given above with a difference of scaling factor η Ext ( V) V Conclusions:
7 1. Due to the one-sided structure of this junction, the extent of the space charge is mostly into the lightly doped P-side. 2. The space-charge recombination currents are proportional to the space-charge layer thickness and inversely proportional to the recombination times, τ ~ 1/(B.N). Although relative components of the recombination currents are expected to be favored by the wider space charge in the lowly doped P-side, Ir ~ W/τ Β.Ν.W, N.W product dependency (the total charge on each side of the junction which is eual) makes both currents to be the same. 3. At low bias (~0.8V) the recombination total dominates over the diffusion total. Later the diffusion total takes over, at 1.1V 52mA passing through the diode is 99% due diffusion. 4. Due to the one-sided nature of this junction, the diffusion (injection) components are one sided, i.e., the diffusion current component corresponding to injection from highly doped side (N+) to the lowly doped side (P) overwhelmingly dominates. 5. Therefore, the LED glow will be coming predominantly from th P-side of the junction. 6. The external efficiency decreases with the bias voltage is increased (as the light output increases).
8
9
10
11
12
Spring Semester 2012 Final Exam
Spring Semester 2012 Final Exam Note: Show your work, underline results, and always show units. Official exam time: 2.0 hours; an extension of at least 1.0 hour will be granted to anyone. Materials parameters
Chapter 7. The pn Junction
Chapter 7 The pn Junction Chapter 7 PN Junction PN junction can be fabricated by implanting or diffusing donors into a P-type substrate such that a layer of semiconductor is converted into N type. Converting
n N D n p = n i p N A
Summary of electron and hole concentration in semiconductors Intrinsic semiconductor: E G n kt i = pi = N e 2 0 Donor-doped semiconductor: n N D where N D is the concentration of donor impurity Acceptor-doped
MTLE-6120: Advanced Electronic Properties of Materials. Semiconductor p-n junction diodes. Reading: Kasap ,
MTLE-6120: Advanced Electronic Properties of Materials 1 Semiconductor p-n junction diodes Reading: Kasap 6.1-6.5, 6.9-6.12 Metal-semiconductor contact potential 2 p-type n-type p-type n-type Same semiconductor
ρ ρ LED access resistances d A W d s n s p p p W the output window size p-layer d p series access resistance d n n-layer series access resistance
LED access resistances W the output window size p-layer series access resistance d p n-layer series access resistance d n The n-layer series access resistance R = ρ s n where the resistivity of the n-layer
pn JUNCTION THE SHOCKLEY MODEL
The pn Junction: The Shockley Model ( S. O. Kasap, 1990-001) 1 pn JUNCTION THE SHOCKLEY MODEL Safa Kasap Department of Electrical Engineering University of Saskatchewan Canada Although the hole and its
The pn junction. [Fonstad, Ghione]
![The pn junction. [Fonstad, Ghione]](/thumbs/93/112370833.jpg "The pn junction. [Fonstad, Ghione]")
The pn junction [Fonstad, Ghione] Band diagram On the vertical axis: potential energy of the electrons On the horizontal axis: now there is nothing: later we ll put the position qf s : work function (F
Schottky Rectifiers Zheng Yang (ERF 3017,
ECE442 Power Semiconductor Devices and Integrated Circuits Schottky Rectifiers Zheng Yang (ERF 3017, email: yangzhen@uic.edu) Power Schottky Rectifier Structure 2 Metal-Semiconductor Contact The work function
Lecture-4 Junction Diode Characteristics
1 Lecture-4 Junction Diode Characteristics Part-II Q: Aluminum is alloyed into n-type Si sample (N D = 10 16 cm 3 ) forming an abrupt junction of circular cross-section, with an diameter of 0.02 in. Assume
Department of Electrical and Computer Engineering, Cornell University. ECE 3150: Microelectronics. Spring Due on Feb. 15, 2018 by 7:00 PM
Department of Electrical and Computer Engineering, Cornell University ECE 3150: Microelectronics Spring 018 Homework 3 Due on Feb. 15, 018 by 7:00 PM Suggested Readings: a) Lecture notes Important Note:
Session 6: Solid State Physics. Diode
Session 6: Solid State Physics Diode 1 Outline A B C D E F G H I J 2 Definitions / Assumptions Homojunction: the junction is between two regions of the same material Heterojunction: the junction is between
For the following statements, mark ( ) for true statement and (X) for wrong statement and correct it.
Benha University Faculty of Engineering Shoubra Electrical Engineering Department First Year communications. Answer all the following questions Illustrate your answers with sketches when necessary. The
PHYSICAL ELECTRONICS(ECE3540) CHAPTER 9 METAL SEMICONDUCTOR AND SEMICONDUCTOR HETERO-JUNCTIONS
PHYSICAL ELECTRONICS(ECE3540) CHAPTER 9 METAL SEMICONDUCTOR AND SEMICONDUCTOR HETERO-JUNCTIONS Tennessee Technological University Monday, November 11, 013 1 Introduction Chapter 4: we considered the semiconductor
PHYSICAL ELECTRONICS(ECE3540) CHAPTER 9 METAL SEMICONDUCTOR AND SEMICONDUCTOR HETERO-JUNCTIONS
PHYSICAL ELECTRONICS(ECE3540) CHAPTER 9 METAL SEMICONDUCTOR AND SEMICONDUCTOR HETERO-JUNCTIONS Tennessee Technological University Wednesday, October 30, 013 1 Introduction Chapter 4: we considered the
Lecture 20 - p-n Junction (cont.) October 21, Non-ideal and second-order effects
6.70J/3.43J - Integrated Microelectronic Devices - Fall 00 Lecture 0-1 Lecture 0 - p-n Junction (cont.) October 1, 00 Contents: 1. Non-ideal and second-order effects Reading assignment: del Alamo, Ch.
Institute of Solid State Physics. Technische Universität Graz. Exam. Feb 2, 10:00-11:00 P2
Technische Universität Graz nstitute of Solid State Physics Exam Feb 2, 10:00-11:00 P2 Exam Four questions, two from the online list. Calculator is ok. No notes. Explain some concept: (tunnel contact,
( )! N D ( x) ) and equilibrium
ECE 66: SOLUTIONS: ECE 66 Homework Week 8 Mark Lundstrom March 7, 13 1) The doping profile for an n- type silicon wafer ( N D = 1 15 cm - 3 ) with a heavily doped thin layer at the surface (surface concentration,
UNIVERSITY OF CALIFORNIA College of Engineering Department of Electrical Engineering and Computer Sciences. Professor Chenming Hu.
UNIVERSITY OF CALIFORNIA College of Engineering Department of Electrical Engineering and Computer Sciences EECS 130 Spring 2009 Professor Chenming Hu Midterm I Name: Closed book. One sheet of notes is
Lecture 17 - p-n Junction. October 11, Ideal p-n junction in equilibrium 2. Ideal p-n junction out of equilibrium
6.72J/3.43J - Integrated Microelectronic Devices - Fall 22 Lecture 17-1 Lecture 17 - p-n Junction October 11, 22 Contents: 1. Ideal p-n junction in equilibrium 2. Ideal p-n junction out of equilibrium
Paper Review. Special Topics in Optical Engineering II (15/1) Minkyu Kim. IEEE Journal of Quantum Electronics, Feb 1985
Paper Review IEEE Journal of Quantum Electronics, Feb 1985 Contents Semiconductor laser review High speed semiconductor laser Parasitic elements limitations Intermodulation products Intensity noise Large
CHAPTER 4: P-N P N JUNCTION Part 2. M.N.A. Halif & S.N. Sabki
CHAPTER 4: P-N P N JUNCTION Part 2 Part 2 Charge Storage & Transient Behavior Junction Breakdown Heterojunction CHARGE STORAGE & TRANSIENT BEHAVIOR Once injected across the junction, the minority carriers
Electron Energy, E E = 0. Free electron. 3s Band 2p Band Overlapping energy bands. 3p 3s 2p 2s. 2s Band. Electrons. 1s ATOM SOLID.
Electron Energy, E Free electron Vacuum level 3p 3s 2p 2s 2s Band 3s Band 2p Band Overlapping energy bands Electrons E = 0 1s ATOM 1s SOLID In a metal the various energy bands overlap to give a single
Lecture 15 - The pn Junction Diode (I) I-V Characteristics. November 1, 2005
6.012 - Microelectronic Devices and Circuits - Fall 2005 Lecture 15-1 Lecture 15 - The pn Junction Diode (I) I-V Characteristics November 1, 2005 Contents: 1. pn junction under bias 2. I-V characteristics
Solid State Electronics. Final Examination
The University of Toledo EECS:4400/5400/7400 Solid State Electronic Section elssf08fs.fm - 1 Solid State Electronics Final Examination Problems Points 1. 1. 14 3. 14 Total 40 Was the exam fair? yes no
Semiconductor Physics fall 2012 problems
Semiconductor Physics fall 2012 problems 1. An n-type sample of silicon has a uniform density N D = 10 16 atoms cm -3 of arsenic, and a p-type silicon sample has N A = 10 15 atoms cm -3 of boron. For each
Lecture 16 - The pn Junction Diode (II) Equivalent Circuit Model. April 8, 2003
6.012 - Microelectronic Devices and Circuits - Spring 2003 Lecture 16-1 Lecture 16 - The pn Junction Diode (II) Equivalent Circuit Model April 8, 2003 Contents: 1. I-V characteristics (cont.) 2. Small-signal
Chemistry Instrumental Analysis Lecture 8. Chem 4631
Chemistry 4631 Instrumental Analysis Lecture 8 UV to IR Components of Optical Basic components of spectroscopic instruments: stable source of radiant energy transparent container to hold sample device
EE 6313 Homework Assignments
EE 6313 Homework Assignments 1. Homework I: Chapter 1: 1.2, 1.5, 1.7, 1.10, 1.12 [Lattice constant only] (Due Sept. 1, 2009). 2. Homework II: Chapter 1, 2: 1.17, 2.1 (a, c) (k = π/a at zone edge), 2.3
Consider a uniformly doped PN junction, in which one region of the semiconductor is uniformly doped with acceptor atoms and the adjacent region is
CHAPTER 7 The PN Junction Consider a uniformly doped PN junction, in which one region of the semiconductor is uniformly doped with acceptor atoms and the adjacent region is uniformly doped with donor atoms.
Semiconductor Physics and Devices
The pn Junction 1) Charge carriers crossing the junction. 3) Barrier potential Semiconductor Physics and Devices Chapter 8. The pn Junction Diode 2) Formation of positive and negative ions. 4) Formation
8. Schottky contacts / JFETs
Technische Universität Graz Institute of Solid State Physics 8. Schottky contacts / JFETs Nov. 21, 2018 Technische Universität Graz Institute of Solid State Physics metal - semiconductor contacts Photoelectric
Electronic Devices and Circuits Lecture 5 - p-n Junction Injection and Flow - Outline
6.012 - Electronic Devices and Circuits Lecture 5 - p-n Junction Injection and Flow - Outline Review Depletion approimation for an abrupt p-n junction Depletion charge storage and depletion capacitance
V BI. H. Föll: kiel.de/matwis/amat/semi_en/kap_2/backbone/r2_2_4.html. different electrochemical potentials (i.e.
Consider the the band diagram for a homojunction, formed when two bits of the same type of semicondutor (e.g. Si) are doped p and ntype and then brought into contact. Electrons in the two bits have different
Semiconductor device structures are traditionally divided into homojunction devices
0. Introduction: Semiconductor device structures are traditionally divided into homojunction devices (devices consisting of only one type of semiconductor material) and heterojunction devices (consisting
collisions of electrons. In semiconductor, in certain temperature ranges the conductivity increases rapidly by increasing temperature
1.9. Temperature Dependence of Semiconductor Conductivity Such dependence is one most important in semiconductor. In metals, Conductivity decreases by increasing temperature due to greater frequency of
L03: pn Junctions, Diodes
8/30/2012 Page 1 of 5 Reference:C:\Users\Bernhard Boser\Documents\Files\Lib\MathCAD\Default\defaults.mcd L03: pn Junctions, Diodes Intrinsic Si Q: What are n, p? Q: Is the Si charged? Q: How could we make
FIBER OPTICS. Prof. R.K. Shevgaonkar. Department of Electrical Engineering. Indian Institute of Technology, Bombay. Lecture: 14.
FIBER OPTICS Prof. R.K. Shevgaonkar Department of Electrical Engineering Indian Institute of Technology, Bombay Lecture: 14 Optical Sources Fiber Optics, Prof. R.K. Shevgaonkar, Dept. of Electrical Engineering,
Lecture 2. Introduction to semiconductors Structures and characteristics in semiconductors
Lecture 2 Introduction to semiconductors Structures and characteristics in semiconductors Semiconductor p-n junction Metal Oxide Silicon structure Semiconductor contact Literature Glen F. Knoll, Radiation
Schottky diodes. JFETs - MESFETs - MODFETs
Technische Universität Graz Institute of Solid State Physics Schottky diodes JFETs - MESFETs - MODFETs Quasi Fermi level When the charge carriers are not in equilibrium the Fermi energy can be different
UNIVERSITY OF CALIFORNIA College of Engineering Department of Electrical Engineering and Computer Sciences. EECS 130 Professor Ali Javey Fall 2006
UNIVERSITY OF CALIFORNIA College of Engineering Department of Electrical Engineering and Computer Sciences EECS 130 Professor Ali Javey Fall 2006 Midterm I Name: Closed book. One sheet of notes is allowed.
Lecture 16 The pn Junction Diode (III)
Lecture 16 The pn Junction iode (III) Outline I V Characteristics (Review) Small signal equivalent circuit model Carrier charge storage iffusion capacitance Reading Assignment: Howe and Sodini; Chapter
CME 300 Properties of Materials. ANSWERS: Homework 9 November 26, As atoms approach each other in the solid state the quantized energy states:
CME 300 Properties of Materials ANSWERS: Homework 9 November 26, 2011 As atoms approach each other in the solid state the quantized energy states: are split. This splitting is associated with the wave
Basic Principles of Light Emission in Semiconductors
Basic Principles of Light Emission in Semiconductors Class: Integrated Photonic Devices Time: Fri. 8:00am ~ 11:00am. Classroom: 資電 06 Lecturer: Prof. 李明昌 (Ming-Chang Lee) Model for Light Generation and
EE105 Fall 2015 Microelectronic Devices and Circuits: Semiconductor Fabrication and PN Junctions
EE105 Fall 2015 Microelectronic Devices and Circuits: Semiconductor Fabrication and PN Junctions Prof. Ming C. Wu wu@eecs.berkeley.edu 511 Sutardja Dai Hall (SDH) 1 pn Junction p-type semiconductor in
The Law of the Junction Revisited. Mark Lundstrom Network for Computational Nanotechnology and Purdue University ( ). (1)
The Law of the Junction Revisited Mark Lundstrom Network for Computational Nanotechnology and Purdue University Consider a one-sided, short base diode like that shown in Fig.. We usually analyze the I-V
Classification of Solids
Classification of Solids Classification by conductivity, which is related to the band structure: (Filled bands are shown dark; D(E) = Density of states) Class Electron Density Density of States D(E) Examples
Final Examination EE 130 December 16, 1997 Time allotted: 180 minutes
Final Examination EE 130 December 16, 1997 Time allotted: 180 minutes Problem 1: Semiconductor Fundamentals [30 points] A uniformly doped silicon sample of length 100µm and cross-sectional area 100µm 2
6.012 Electronic Devices and Circuits
Page 1 of 1 YOUR NAME Department of Electrical Engineering and Computer Science Massachusetts Institute of Technology 6.12 Electronic Devices and Circuits Exam No. 1 Wednesday, October 7, 29 7:3 to 9:3
FYS 3028/8028 Solar Energy and Energy Storage. Calculator with empty memory Language dictionaries
Faculty of Science and Technology Exam in: FYS 3028/8028 Solar Energy and Energy Storage Date: 11.05.2016 Time: 9-13 Place: Åsgårdvegen 9 Approved aids: Type of sheets (sqares/lines): Number of pages incl.
Memories Bipolar Transistors
Technische Universität Graz nstitute of Solid State Physics Memories Bipolar Transistors Technische Universität Graz nstitute of Solid State Physics Exams February 5 March 7 April 18 June 27 Exam Four
Solar cells operation
Solar cells operation photovoltaic effect light and dark V characteristics effect of intensity effect of temperature efficiency efficency losses reflection recombination carrier collection and quantum
Lecture 15 The pn Junction Diode (II)
Lecture 15 The pn Junction Diode (II I-V characteristics Forward Bias Reverse Bias Outline Reading Assignment: Howe and Sodini; Chapter 6, Sections 6.4-6.5 6.012 Spring 2007 Lecture 15 1 1. I-V Characteristics
Peak Electric Field. Junction breakdown occurs when the peak electric field in the PN junction reaches a critical value. For the N + P junction,
Peak Electric Field Junction breakdown occurs when the peak electric field in the P junction reaches a critical value. For the + P junction, qa E ( x) ( xp x), s W dep 2 s ( bi Vr ) 2 s potential barrier
Semiconductor Detectors
Semiconductor Detectors Summary of Last Lecture Band structure in Solids: Conduction band Conduction band thermal conductivity: E g > 5 ev Valence band Insulator Charge carrier in conductor: e - Charge
EECS130 Integrated Circuit Devices
EECS130 Integrated Circuit Devices Professor Ali Javey 9/18/2007 P Junctions Lecture 1 Reading: Chapter 5 Announcements For THIS WEEK OLY, Prof. Javey's office hours will be held on Tuesday, Sept 18 3:30-4:30
ELEC 3908, Physical Electronics, Lecture 19. BJT Base Resistance and Small Signal Modelling
ELEC 3908, Physical Electronics, Lecture 19 BJT Base Resistance and Small Signal Modelling Lecture Outline Lecture 17 derived static (dc) injection model to predict dc currents from terminal voltages This
Sample Exam # 2 ECEN 3320 Fall 2013 Semiconductor Devices October 28, 2013 Due November 4, 2013
Sample Exam # 2 ECEN 3320 Fall 203 Semiconductor Devices October 28, 203 Due November 4, 203. Below is the capacitance-voltage curve measured from a Schottky contact made on GaAs at T 300 K. Figure : Capacitance
Hussein Ayedh. PhD Studet Department of Physics
Hussein Ayedh PhD Studet Department of Physics OUTLINE Introduction Semiconductors Basics DLTS Theory DLTS Requirements Example Summary Introduction Energetically "deep trapping levels in semiconductor
ECE-342 Test 2 Solutions, Nov 4, :00-8:00pm, Closed Book (one page of notes allowed)
ECE-342 Test 2 Solutions, Nov 4, 2008 6:00-8:00pm, Closed Book (one page of notes allowed) Please use the following physical constants in your calculations: Boltzmann s Constant: Electron Charge: Free
junctions produce nonlinear current voltage characteristics which can be exploited
Chapter 6 P-N DODES Junctions between n-and p-type semiconductors are extremely important foravariety of devices. Diodes based on p-n junctions produce nonlinear current voltage characteristics which can
1 Name: Student number: DEPARTMENT OF PHYSICS AND PHYSICAL OCEANOGRAPHY MEMORIAL UNIVERSITY OF NEWFOUNDLAND. Fall :00-11:00
1 Name: DEPARTMENT OF PHYSICS AND PHYSICAL OCEANOGRAPHY MEMORIAL UNIVERSITY OF NEWFOUNDLAND Final Exam Physics 3000 December 11, 2012 Fall 2012 9:00-11:00 INSTRUCTIONS: 1. Answer all seven (7) questions.
Lecture 2. Introduction to semiconductors Structures and characteristics in semiconductors
Lecture 2 Introduction to semiconductors Structures and characteristics in semiconductors Semiconductor p-n junction Metal Oxide Silicon structure Semiconductor contact Literature Glen F. Knoll, Radiation
Chapter 7. Solar Cell
Chapter 7 Solar Cell 7.0 Introduction Solar cells are useful for both space and terrestrial application. Solar cells furnish the long duration power supply for satellites. It converts sunlight directly
Holes (10x larger). Diode currents proportional to minority carrier densities on each side of the depletion region: J n n p0 = n i 2
Part V. (40 pts.) A diode is composed of an abrupt PN junction with N D = 10 16 /cm 3 and N A =10 17 /cm 3. The diode is very long so you can assume the ends are at x =positive and negative infinity. 1.
Semiconductor Junctions
8 Semiconductor Junctions Almost all solar cells contain junctions between different materials of different doping. Since these junctions are crucial to the operation of the solar cell, we will discuss
Physics of Semiconductors
Physics of Semiconductors 9 th 2016.6.13 Shingo Katsumoto Department of Physics and Institute for Solid State Physics University of Tokyo Site for uploading answer sheet Outline today Answer to the question
Lecture 10 - Carrier Flow (cont.) February 28, 2007
6.720J/3.43J Integrated Microelectronic Devices - Spring 2007 Lecture 10-1 Lecture 10 - Carrier Flow (cont.) February 28, 2007 Contents: 1. Minority-carrier type situations Reading assignment: del Alamo,
EE 5611 Introduction to Microelectronic Technologies Fall Tuesday, September 23, 2014 Lecture 07
EE 5611 Introduction to Microelectronic Technologies Fall 2014 Tuesday, September 23, 2014 Lecture 07 1 Introduction to Solar Cells Topics to be covered: Solar cells and sun light Review on semiconductor
Metal Vapour Lasers Use vapoured metal as a gain medium Developed by W. Silfvast (1966) Two types: Ionized Metal vapour (He-Cd) Neutral Metal vapour
Metal Vapour Lasers Use vapoured metal as a gain medium Developed by W. Silfvast (1966) Two types: Ionized Metal vapour (He-Cd) Neutral Metal vapour (Cu) All operate by vaporizing metal in container Helium
Semiconductor Physics Problems 2015
Semiconductor Physics Problems 2015 Page and figure numbers refer to Semiconductor Devices Physics and Technology, 3rd edition, by SM Sze and M-K Lee 1. The purest semiconductor crystals it is possible
Recombination: Depletion. Auger, and Tunnelling
Recombination: Depletion Region, Bulk, Radiative, Auger, and Tunnelling Ch 140 Lecture Notes #13 Prepared by David Gleason We assume: Review of Depletion Region Recombination Flat Quantum Fermi Levels
Solid State Physics SEMICONDUCTORS - IV. Lecture 25. A.H. Harker. Physics and Astronomy UCL
Solid State Physics SEMICONDUCTORS - IV Lecture 25 A.H. Harker Physics and Astronomy UCL 9.9 Carrier diffusion and recombination Suppose we have a p-type semiconductor, i.e. n h >> n e. (1) Create a local
UNIVERSITY OF CALIFORNIA College of Engineering Department of Electrical Engineering and Computer Sciences. EECS 130 Professor Ali Javey Fall 2006
UNIVERSITY OF CALIFORNIA College of Engineering Department of Electrical Engineering and Computer Sciences EECS 130 Professor Ali Javey Fall 2006 Midterm 2 Name: SID: Closed book. Two sheets of notes are
Lecture 19 - p-n Junction (cont.) October 18, Ideal p-n junction out of equilibrium (cont.) 2. pn junction diode: parasitics, dynamics
6.720J/3.43J - Integrated Microelectronic Devices - Fall 2002 Lecture 19-1 Lecture 19 - p-n Junction (cont.) October 18, 2002 Contents: 1. Ideal p-n junction out of equilibrium (cont.) 2. pn junction diode:
FYS3410 Condensed matter physics
FYS3410 Condensed matter physics Lecture 23 and 24: pn-junctions and electrooptics Randi Haakenaasen UniK/UiO Forsvarets forskningsinstitutt 11.05.2016 and 18.05.2016 Outline Why pn-junctions are important
BJT - Mode of Operations
JT - Mode of Operations JTs can be modeled by two back-to-back diodes. N+ P N- N+ JTs are operated in four modes. HO #6: LN 251 - JT M Models Page 1 1) Forward active / normal junction forward biased junction
FIBER OPTICS. Prof. R.K. Shevgaonkar. Department of Electrical Engineering. Indian Institute of Technology, Bombay. Lecture: 12.
FIBER OPTICS Prof. R.K. Shevgaonkar Department of Electrical Engineering Indian Institute of Technology, Bombay Lecture: 12 Optical Sources Fiber Optics, Prof. R.K. Shevgaonkar, Dept. of Electrical Engineering,
Quiz #1 Practice Problem Set
Name: Student Number: ELEC 3908 Physical Electronics Quiz #1 Practice Problem Set? Minutes January 22, 2016 - No aids except a non-programmable calculator - All questions must be answered - All questions
Electronic Supporting Information
Characterization of Planar Lead Halide Perovskite Solar Cells by Impedance Spectroscopy, Open Circuit Photovoltage Decay and Intensity-Modulated Photovoltage/Photocurrent Spectroscopy Adam Pockett 1, Giles
exp Compared to the values obtained in Example 2.1, we can see that the intrinsic carrier concentration in Ge at T = 300 K is 2.
.1 (a) k =8.617 10 5 ev/k n i (T = 300 K) = 1.66 10 15 (300 K) 3/ 66 ev exp (8.617 10 5 ev/k) (300 K) =.465 10 13 cm 3 n i (T = 600 K) = 1.66 10 15 (600 K) 3/ 66 ev exp (8.617 10 5 ev/k) (600 K) = 4.14
Semiconductor Detectors are Ionization Chambers. Detection volume with electric field Energy deposited positive and negative charge pairs
1 V. Semiconductor Detectors V.1. Principles Semiconductor Detectors are Ionization Chambers Detection volume with electric field Energy deposited positive and negative charge pairs Charges move in field
Lecture 7 PN Junction and MOS Electrostatics(IV) Metal Oxide Semiconductor Structure (contd.)
Lecture 7 PN Junction and MOS Electrostatics(IV) Metal Oxide Semiconductor Structure (contd.) Outline 1. Overview of MOS electrostatics under bias 2. Depletion regime 3. Flatband 4. Accumulation regime
Course overview. Me: Dr Luke Wilson. The course: Physics and applications of semiconductors. Office: E17 open door policy
Course overview Me: Dr Luke Wilson Office: E17 open door policy email: luke.wilson@sheffield.ac.uk The course: Physics and applications of semiconductors 10 lectures aim is to allow time for at least one
Physics of Semiconductors 8 th
Physics of Semiconductors 8 th 2016.6.6 Shingo Katsumoto Department of Physics, Institute for Solid State Physics University of Tokyo Review of pn junction Estimation of builtin potential Depletion layer
3 Minority carrier profiles (the hyperbolic functions) Consider a
Microelectronic Devices and Circuits October 9, 013 - Homework #3 Due Nov 9, 013 1 Te pn junction Consider an abrupt Si pn + junction tat as 10 15 acceptors cm -3 on te p-side and 10 19 donors on te n-side.
ECE-305: Spring 2018 Exam 2 Review
ECE-305: Spring 018 Exam Review Pierret, Semiconductor Device Fundamentals (SDF) Chapter 3 (pp. 75-138) Chapter 5 (pp. 195-6) Professor Peter Bermel Electrical and Computer Engineering Purdue University,
ECE 305 Fall Final Exam (Exam 5) Wednesday, December 13, 2017
NAME: PUID: ECE 305 Fall 017 Final Exam (Exam 5) Wednesday, December 13, 017 This is a closed book exam. You may use a calculator and the formula sheet at the end of this exam. Following the ECE policy,
Solar Cell Physics: recombination and generation
NCN Summer School: July 2011 Solar Cell Physics: recombination and generation Prof. Mark Lundstrom lundstro@purdue.edu Electrical and Computer Engineering Purdue University West Lafayette, Indiana USA
12. Memories / Bipolar transistors
Technische Universität Graz Institute of Solid State Physics 12. Memories / Bipolar transistors Jan. 9, 2019 Technische Universität Graz Institute of Solid State Physics Exams January 31 March 8 May 17
Theory of Electrical Characterization of Semiconductors
Theory of Electrical Characterization of Semiconductors P. Stallinga Universidade do Algarve U.C.E.H. A.D.E.E.C. OptoElectronics SELOA Summer School May 2000, Bologna (It) Overview Devices: bulk Schottky
PN Junctions. Lecture 7
Lecture 7 PN Junctions Kathy Aidala Applied Physics, G2 Harvard University 10 October, 2002 Wei 1 Active Circuit Elements Why are they desirable? Much greater flexibility in circuit applications. What
Schottky Diodes (M-S Contacts)
Schottky Diodes (M-S Contacts) Three MITs of the Day Band diagrams for ohmic and rectifying Schottky contacts Similarity to and difference from bipolar junctions on electrostatic and IV characteristics.
Midterm I - Solutions
UNIVERSITY OF CALIFORNIA College of Engineering Department of Electrical Engineering and Computer Sciences EECS 130 Spring 2008 Professor Chenming Hu Midterm I - Solutions Name: SID: Grad/Undergrad: Closed
Semiconductor Device Physics
1 emiconductor Device Physics Lecture 8 http://zitompul.wordpress.com 2 0 1 3 emiconductor Device Physics 2 M Contacts and chottky Diodes 3 M Contact The metal-semiconductor (M) contact plays a very important
Junction Diodes. Tim Sumner, Imperial College, Rm: 1009, x /18/2006
Junction Diodes Most elementary solid state junction electronic devices. They conduct in one direction (almost correct). Useful when one converts from AC to DC (rectifier). But today diodes have a wide
Current mechanisms Exam January 27, 2012
Current mechanisms Exam January 27, 2012 There are four mechanisms that typically cause currents to flow: thermionic emission, diffusion, drift, and tunneling. Explain briefly which kind of current mechanisms
The 5 basic equations of semiconductor device physics: We will in general be faced with finding 5 quantities:
6.012 - Electronic Devices and Circuits Solving the 5 basic equations - 2/12/08 Version The 5 basic equations of semiconductor device physics: We will in general be faced with finding 5 quantities: n(x,t),
9. Semiconductor Devices /Phonons
Technische Universität Graz Institute of Solid State Physics 9. Semiconductor Devices /Phonons Oct 29, 2018 p and n profiles p n V bi ~ 1 V E c W ~ 1 m E F E max ~ 10 4 V/cm ev bi E v p Ev E F Nv exp kt
LEC E T C U T R U E R E 17 -Photodetectors
LECTURE 17 -Photodetectors Topics to be covered Photodetectors PIN photodiode Avalanche Photodiode Photodetectors Principle of the p-n junction Photodiode A generic photodiode. Photodetectors Principle
Lecture 2. Introduction to semiconductors Structures and characteristics in semiconductors. Fabrication of semiconductor sensor
Lecture 2 Introduction to semiconductors Structures and characteristics in semiconductors Semiconductor p-n junction Metal Oxide Silicon structure Semiconductor contact Fabrication of semiconductor sensor