EE 321 Analog Electronics, Fall 2013 Homework #8 solution


 Gwendolyn Hunt
 4 years ago
 Views:
Transcription
1 EE 321 Analog Electronics, Fall 2013 Homework #8 solution The following table summarizes some of the basic attributes of a number of BJTs of different types, operating as amplifiers under various conditions. Provide the missing entries. I will just provide the explicit equations for the first column, (a): β = α 1 α I E = I C α I B = I C β g m = I C V T r e = α g m = β g m Transistor a b c d e f g α β I C (ma) I E (ma) I B (ma) g m (ma/v) r e (Ω) (Ω) K A biased BJT operates as a groundedemitter amplifier between a signal source, with a source resistance of 10kΩ, connected to the base and a 10kΩ 1
2 load connected as a collector resistance R C. In the corresponding model, g m is 40mA/V and is 2.5kΩ. Draw the complete amplifier model using the hybridπ BJT equivalent circuit. Calculate the overall voltage gain v c /v s. What is the value of BJT β implied by the values of the model parameters? To what value must β be increased to double the overall voltage gain? vs Rs vc Rp Rc v o = g m R C v i = g m R C v s = R s = 80 The value of β can be found from or = β g m β = g m = = 100 To double the gain we would want to double the factor It is currently equal to R s = 0.2 To double it we would need to change : R s + = 0.4 = R s = 0.67R s = 6.7kΩ The factor increase in β is the same as the factor increase in : new 6.7 β new = β old = 100 old 2.5 = For the circuit shown in Fig. P5.115, draw a complete smallsignal equivalent circuit utilizing an appropriate T model for the BJT (use α = 0.99). Your 2
3 circuit should show the values of all components, including the model parameters. What is the input resistance R in? Calculate the overall gain v o /v sig. Here is the smallsignal equivalent Rc RL re Rsig where The overall voltage can be found from v o = (R C R L )i c i c = αi e so i e = v sig R sig +r e 3
4 v o 1 =(R C R L )α v sig R sig +r e 1 =(10 10) = A commonemitter amplifier of the type shown in Fig 5.60(a) is biased to operate at I C = 0.2mA and has a collector resistance R C = 24kΩ. The transistor has β = 100 and a large V A. The signal source is directly coupled to the base and C c1 and R B are eliminated. Find R in, the voltage gain A vo, and R o. Use these results to determine the overall voltage gain when a 10 kω resistor is connected to the collector and the source resistance R sig = 10kΩ. This is a commonemitter amplifier with R B =, so the input resistance is R in = = βv T = = 12.5kΩ I C 0.2 A vo = g m R C = I C V T R C = = 80 4
5 The overall voltage gain, v o /v sig is then R O = R C = 10kΩ R L G v = v o = A vo v sig R sig + R L +R O = ( 80) = For the commonemitter amplifier shown in Figure P5.130, let V CC = 9V, = 27kΩ, = 15kΩ, R E = 1.2kΩ, and R C = 2.2kΩ. The transistor has β = 100, and V A = 100V. Calculate the dc bias current I E. If the amplifier operates between a source for which R sig = 10kΩ and a load of 2kΩ, replace the transistor with its bybridπ model, and find the values of R in, the voltage gain v o /v sig, and the current gain i o /i i. We have V B = (i 1 i B ) V B = V BE +(β +1)R E i B V B = V CC i 1 and we can eliminate i D and i B from the first equation. ( VCC V B V B = V B [ 1+ + (β +1)R E V B = V CC R +V 2 BE (β+1)r E 1+ + ] (β+1)r E = 9 V B V BE (β +1)R E ) = V CC +V BE (β +1)R E = 3.03V 5
6 Note that for (β +1)R E and V CC V BE the expression for V B reduces to the voltage divider expression, R V B = V 1 CC = V 1+ CC = 9 15 R = 3.21V 1 I will proceed with the result from the fully correct expression. Next, the emitter current is I E = V E = V B V BE R E R E The smallsignal model looks like this = = 1.94mA Rs ii vo io vs R1 R2 Rp ro Rc RL The input resistance is where such that R in = = β = βv T = βv T = (β +1)V T = = 1302Ω g m I C αi E I E 1.94 The voltage gain is R in = = = 1.15kΩ G v = R in A v = R in g m (R C r o R L ) = R in βi E (R C r o R L ) R in +R s R in +R s R in +R s (β +1)V T where and then r o = V A I C = V A αi E = (β +1)V A βi E = = 52.1kΩ
7 G v = R in R in +R s = = 8.07 βi E (R C r o R L ) (β +1)V T ( ) Using the topology of Fig. P5.130, design an amplifier to operate between a 10kΩ source and a 2kΩ load with a gain v o /v sig of 8. The power supply available is 9V. Use an emitter current of approximately 2mA and a current of about onetenth of that in the voltage divider that feeds tbe base, with the dc voltage at the base about one third of the supply. The transistor available has β = 100 and V A = 100V. Use standard 5% resistors (See Appendix G) This is the same circuit as before, except choose the nearest 5% resistors. In that case choose = 27kΩ, = 15kΩ, R E = 1.2kΩ, R C = 2.2kΩ. Well, it turns out the problem is identical to P That was easy. 7
Circle the one best answer for each question. Five points per question.
ID # NAME EE255 EXAM 3 November 8, 2001 Instructor (circle one) Talavage Gray This exam consists of 16 multiple choice questions and one workout problem. Record all answers to the multiple choice questions
More informationCHAPTER.4: Transistor at low frequencies
CHAPTER.4: Transistor at low frequencies Introduction Amplification in the AC domain BJT transistor modeling The re Transistor Model The Hybrid equivalent Model Introduction There are three models commonly
More informationBiasing the CE Amplifier
Biasing the CE Amplifier Graphical approach: plot I C as a function of the DC baseemitter voltage (note: normally plot vs. base current, so we must return to EbersMoll): I C I S e V BE V th I S e V th
More informationBipolar Junction Transistor (BJT)  Introduction
Bipolar Junction Transistor (BJT)  Introduction It was found in 1948 at the Bell Telephone Laboratories. It is a three terminal device and has three semiconductor regions. It can be used in signal amplification
More informationEE105 Fall 2014 Microelectronic Devices and Circuits
EE05 Fall 204 Microelectronic Devices and Circuits Prof. Ming C. Wu wu@eecs.berkeley.edu 5 Sutardja Dai Hall (SDH) Terminal Gain and I/O Resistances of BJT Amplifiers Emitter (CE) Collector (CC) Base (CB)
More informationECE 523/421  Analog Electronics University of New Mexico Solutions Homework 3
ECE 523/42  Analog Electronics University of New Mexico Solutions Homework 3 Problem 7.90 Show that when ro is taken into account, the voltage gain of the source follower becomes G v v o v sig R L r o
More informationESE319 Introduction to Microelectronics. BJT Biasing Cont.
BJT Biasing Cont. Biasing for DC Operating Point Stability BJT Bias Using Emitter Negative Feedback Single Supply BJT Bias Scheme Constant Current BJT Bias Scheme Rule of Thumb BJT Bias Design 1 Simple
More informationBJT Biasing Cont. & Small Signal Model
BJT Biasing Cont. & Small Signal Model Conservative Bias Design (1/3, 1/3, 1/3 Rule) Bias Design Example SmallSignal BJT Models SmallSignal Analysis 1 Emitter Feedback Bias Design R B R C V CC R 1 R
More informationQuick Review. ESE319 Introduction to Microelectronics. and Q1 = Q2, what is the value of V Odm. If R C1 = R C2. s.t. R C1. Let Q1 = Q2 and R C1
Quick Review If R C1 = R C2 and Q1 = Q2, what is the value of V Odm? Let Q1 = Q2 and R C1 R C2 s.t. R C1 > R C2, express R C1 & R C2 in terms R C and ΔR C. If V Odm is the differential output offset
More informationBJT Biasing Cont. & Small Signal Model
BJT Biasing Cont. & Small Signal Model Conservative Bias Design Bias Design Example Small Signal BJT Models Small Signal Analysis 1 Emitter Feedback Bias Design Voltage bias circuit Single power supply
More informationECE342 Test 3: Nov 30, :008:00, Closed Book. Name : Solution
ECE342 Test 3: Nov 30, 2010 6:008:00, Closed Book Name : Solution All solutions must provide units as appropriate. Unless otherwise stated, assume T = 300 K. 1. (25 pts) Consider the amplifier shown
More informationESE319 Introduction to Microelectronics. Output Stages
Output Stages Power amplifier classification Class A amplifier circuits Class A Power conversion efficiency Class B amplifier circuits Class B Power conversion efficiency Class AB amplifier circuits Class
More informationECE343 Test 2: Mar 21, :008:00, Closed Book. Name : SOLUTION
ECE343 Test 2: Mar 21, 2012 6:008:00, Closed Book Name : SOLUTION 1. (25 pts) (a) Draw a circuit diagram for a differential amplifier designed under the following constraints: Use only BJTs. (You may
More informationID # NAME. EE255 EXAM 3 April 7, Instructor (circle one) Ogborn Lundstrom
ID # NAME EE255 EXAM 3 April 7, 1998 Instructor (circle one) Ogborn Lundstrom This exam consists of 20 multiple choice questions. Record all answers on this page, but you must turn in the entire exam.
More informationChapter 5. BJT AC Analysis
Chapter 5. Outline: The r e transistor model CB, CE & CC AC analysis through r e model commonemitter fixedbias voltagedivider bias emitterbias & emitterfollower commonbase configuration Transistor
More informationBipolar junction transistors
Bipolar junction transistors Find parameters of te BJT in CE configuration at BQ 40 µa and CBQ V. nput caracteristic B / µa 40 0 00 80 60 40 0 0 0, 0,5 0,3 0,35 0,4 BE / V Output caracteristics C / ma
More informationChapter 2  DC Biasing  BJTs
Objectives Chapter 2  DC Biasing  BJTs To Understand: Concept of Operating point and stability Analyzing Various biasing circuits and their comparison with respect to stability BJT A Review Invented
More informationKOM2751 Analog Electronics :: Dr. Muharrem Mercimek :: YTU  Control and Automation Dept. 1 4 DC BIASING BJTS (CONT D II )
KOM2751 Analog Electronics :: Dr. Muharrem Mercimek :: YTU  Control and Automation Dept. 1 4 DC BIASING BJTS (CONT D II ) Most of the content is from the textbook: Electronic devices and circuit theory,
More informationThe CommonEmitter Amplifier
c Copyright 2009. W. Marshall Leach, Jr., Professor, Georgia Institute of Technology, School of Electrical and Computer Engineering. The CommonEmitter Amplifier Basic Circuit Fig. shows the circuit diagram
More informationAt point G V = = = = = = RB B B. IN RB f
Common Emitter At point G CE RC 0. 4 12 0. 4 116. I C RC 116. R 1k C 116. ma I IC 116. ma β 100 F 116µ A I R ( 116µ A)( 20kΩ) 2. 3 R + 2. 3 + 0. 7 30. IN R f Gain in Constant Current Region I I I C F
More informationDC Biasing. Dr. U. Sezen & Dr. D. Gökçen (Hacettepe Uni.) ELE230 Electronics I 15Mar / 59
Contents Three States of Operation BJT DC Analysis FixedBias Circuit EmitterStabilized Bias Circuit Voltage Divider Bias Circuit DC Bias with Voltage Feedback Various Dierent Bias Circuits pnp Transistors
More informationHomework Assignment 08
Homework Assignment 08 Question 1 (Short Takes) Two points each unless otherwise indicated. 1. Give one phrase/sentence that describes the primary advantage of an active load. Answer: Large effective resistance
More informationAssignment 3 ELEC 312/Winter 12 R.Raut, Ph.D.
Page 1 of 3 ELEC 312: ELECTRONICS II : ASSIGNMENT3 Department of Electrical and Computer Engineering Winter 2012 1. A commonemitter amplifier that can be represented by the following equivalent circuit,
More informationClass AB Output Stage
Class AB Output Stage Class AB amplifier Operation Multisim Simulation  VTC Class AB amplifier biasing Widlar current source Multisim Simulation  Biasing 1 Class AB Operation v I V B (set by V B ) Basic
More informationUniversity of Pittsburgh
University of Pittsburgh Experiment #8 Lab Report The Bipolar Junction Transistor: Characteristics and Models Submission Date: 11/6/2017 Instructors: Dr. Minhee Yun John Erickson Yanhao Du Submitted By:
More informationChapter 9 Frequency Response. PART C: High Frequency Response
Chapter 9 Frequency Response PART C: High Frequency Response Discrete Common Source (CS) Amplifier Goal: find high cutoff frequency, f H 2 f H is dependent on internal capacitances V o Load Resistance
More informationESE319 Introduction to Microelectronics Common Emitter BJT Amplifier
Common Emitter BJT Amplifier 1 Adding a signal source to the single power supply bias amplifier R C R 1 R C V CC V CC V B R E R 2 R E Desired effect addition of bias and signal sources Starting point 
More informationChapter 13 SmallSignal Modeling and Linear Amplification
Chapter 13 SmallSignal Modeling and Linear Amplification Microelectronic Circuit Design Richard C. Jaeger Travis N. Blalock 1/4/12 Chap 131 Chapter Goals Understanding of concepts related to: Transistors
More informationSection 1: Common Emitter CE Amplifier Design
ECE 3274 BJT amplifier design CE, CE with Ref, and CC. Richard Cooper Section 1: CE amp Re completely bypassed (open Loop) Section 2: CE amp Re partially bypassed (gain controlled). Section 3: CC amp (open
More informationSOME USEFUL NETWORK THEOREMS
APPENDIX D SOME USEFUL NETWORK THEOREMS Introduction In this appendix we review three network theorems that are useful in simplifying the analysis of electronic circuits: Thévenin s theorem Norton s theorem
More informationLecture 37: Frequency response. Context
EECS 05 Spring 004, Lecture 37 Lecture 37: Frequency response Prof J. S. Smith EECS 05 Spring 004, Lecture 37 Context We will figure out more of the design parameters for the amplifier we looked at in
More information1. (50 points, BJT curves & equivalent) For the 2N3904 =(npn) and the 2N3906 =(pnp)
HW 3 1. (50 points, BJT curves & equivalent) For the 2N3904 =(npn) and the 2N3906 =(pnp) a) Obtain in Spice the transistor curves given on the course web page except do in separate plots, one for the npn
More informationElectronics II. Midterm #2
The University of Toledo EECS:3400 Electronics I Section sums_elct7.fm  StudentName Electronics II Midterm # Problems Points. 8. 3. 7 Total 0 Was the exam fair? yes no The University of Toledo sums_elct7.fm
More informationHomework Assignment 09
Homework Assignment 09 Question 1 (Short Takes) Two points each unless otherwise indicated. 1. What is the 3dB bandwidth of the amplifier shown below if r π = 2.5K, r o = 100K, g m = 40 ms, and C L =
More informationElectronics II. Final Examination
The University of Toledo f17fs_elct27.fm 1 Electronics II Final Examination Problems Points 1. 11 2. 14 3. 15 Total 40 Was the exam fair? yes no The University of Toledo f17fs_elct27.fm 2 Problem 1 11
More informationElectronics II. Midterm #2
The University of Toledo EECS:3400 Electronics I su4ms_elct7.fm Section Electronics II Midterm # Problems Points. 8. 7 3. 5 Total 0 Was the exam fair? yes no The University of Toledo su4ms_elct7.fm Problem
More informationElectronics II. Midterm #1
The University of Toledo EECS:3400 Electronics I su3ms_elct7.fm Section Electronics II Midterm # Problems Points. 5. 6 3. 9 Total 0 Was the exam fair? yes no The University of Toledo su3ms_elct7.fm Problem
More informationLecture 050 Followers (1/11/04) Page ECE Analog Integrated Circuits and Systems II P.E. Allen
Lecture 5 Followers (1/11/4) Page 51 LECTURE 5 FOLLOWERS (READING: GHLM 344362, AH 221226) Objective The objective of this presentation is: Show how to design stages that 1.) Provide sufficient output
More informationLecture 24 Multistage Amplifiers (I) MULTISTAGE AMPLIFIER
Lecture 24 Multistage Amplifiers (I) MULTISTAGE AMPLIFIER Outline. Introduction 2. CMOS multistage voltage amplifier 3. BiCMOS multistage voltage amplifier 4. BiCMOS current buffer 5. Coupling amplifier
More informationCE/CS Amplifier Response at High Frequencies
.. CE/CS Amplifier Response at High Frequencies INEL 4202  Manuel Toledo August 20, 2012 INEL 4202  Manuel Toledo CE/CS High Frequency Analysis 1/ 24 Outline.1 High Frequency Models.2 Simplified Method.3
More informationElectronic Circuits 1. Transistor Devices. Contents BJT and FET Characteristics Operations. Prof. C.K. Tse: Transistor devices
Electronic Circuits 1 Transistor Devices Contents BJT and FET Characteristics Operations 1 What is a transistor? Threeterminal device whose voltagecurrent relationship is controlled by a third voltage
More informationCARLETON UNIVERSITY. FINAL EXAMINATION December DURATION 3 HOURS No. of Students 130
ALETON UNIVESITY FINAL EXAMINATION December 005 DUATION 3 HOUS No. of Students 130 Department Name & ourse Number: Electronics ELE 3509 ourse Instructor(s): Prof. John W. M. ogers and alvin Plett AUTHOIZED
More informationfigure shows a pnp transistor biased to operate in the active mode
Lecture 10b EE215 Electronic Devices and Circuits Asst Prof Muhammad Anis Chaudhary BJT: Device Structure and Physical Operation The pnp Transistor figure shows a pnp transistor biased to operate in the
More informationCapacitors Diodes Transistors. PC200 Lectures. Terry Sturtevant. Wilfrid Laurier University. June 4, 2009
Wilfrid Laurier University June 4, 2009 Capacitor an electronic device which consists of two conductive plates separated by an insulator Capacitor an electronic device which consists of two conductive
More informationUNIVERSITY OF CALIFORNIA, BERKELEY College of Engineering Department of Electrical Engineering and Computer Sciences
UNIVERSITY OF CALIFORNIA, BERKELEY College of Engineering Department of Electrical Engineering and Computer Sciences EE 105: Microelectronic Devices and Circuits Spring 2008 MIDTERM EXAMINATION #1 Time
More information7. DESIGN OF ACCOUPLED BJT AMPLIFIERS FOR MAXIMUM UNDISTORTED VOLTAGE SWING
à 7. DESIGN OF ACCOUPLED BJT AMPLIFIERS FOR MAXIMUM UNDISTORTED VOLTAGE SWING Figure. AC coupled common emitter amplifier circuit ü The DC Load Line V CC = I CQ + V CEQ + R E I EQ I EQ = I CQ + I BQ I
More information55:041 Electronic Circuits The University of Iowa Fall Final Exam
Final Exam Name: Score Max: 135 Question 1 (1 point unless otherwise noted) a. What is the maximum theoretical efficiency for a classb amplifier? Answer: 78% b. The abbreviation/term ESR is often encountered
More informationFigure 1 Basic epitaxial planar structure of NPN. Figure 2 The 3 regions of NPN (left) and PNP (right) type of transistors
Figure 1 Basic epitaxial planar structure of NPN Figure 2 The 3 regions of NPN (left) and PNP (right) type of transistors Lecture Notes: 2304154 Physics and Electronics Lecture 6 (2 nd Half), Year: 2007
More informationChapter 2.  DC Biasing  BJTs
Chapter 2.  DC Biasing  BJTs Objectives To Understand : Concept of Operating point and stability Analyzing Various biasing circuits and their comparison with respect to stability BJT A Review Invented
More informationTransistor Characteristics and A simple BJT Current Mirror
Transistor Characteristics and A simple BJT Current Mirror Currentoltage (I) Characteristics Device Under Test DUT i v T T 1 R X R X T for test Independent variable on horizontal axis Could force current
More informationCHAPTER.6 :TRANSISTOR FREQUENCY RESPONSE
CHAPTER.6 :TRANSISTOR FREQUENCY RESPONSE To understand Decibels, log scale, general frequency considerations of an amplifier. low frequency analysis  Bode plot low frequency response BJT amplifier Miller
More informationKOM2751 Analog Electronics :: Dr. Muharrem Mercimek :: YTU  Control and Automation Dept. 1 4 DC BIASING BJTS (CONT D)
KOM2751 Analog Electronics :: Dr. Muharrem Mercimek :: YTU Control and Automation Dept. 1 4 DC BIASING BJTS (CONT D) Most of the content is from the textbook: Electronic devices and circuit theory, Robert
More informationDelhi Noida Bhopal Hyderabad Jaipur Lucknow Indore Pune Bhubaneswar Kolkata Patna Web: Ph:
Serial : ND_EE_NW_Analog Electronics_05088 Delhi Noida Bhopal Hyderabad Jaipur Lucknow ndore Pune Bhubaneswar Kolkata Patna Web: Email: info@madeeasy.in Ph: 04546 CLASS TEST 089 ELECTCAL ENGNEENG Subject
More informationRIB. ELECTRICAL ENGINEERING Analog Electronics. 8 Electrical Engineering RIBR T7. Detailed Explanations. Rank Improvement Batch ANSWERS.
8 Electrical Engineering RIBR T7 Session 089 S.No. : 9078_LS RIB Rank Improvement Batch ELECTRICL ENGINEERING nalog Electronics NSWERS. (d) 7. (a) 3. (c) 9. (a) 5. (d). (d) 8. (c) 4. (c) 0. (c) 6. (b)
More informationLecture 23: NorCal 40A Power Amplifier. Thermal Modeling.
Whites, EE 322 Lecture 23 Page 1 of 13 Lecture 23: NorCal 40A Power Amplifier. Thermal Modeling. Recall from the last lecture that the NorCal 40A uses a Class C power amplifier. From Fig. 10.3(b) the collector
More informationElectronic Circuits. Transistor Bias Circuits. Manar Mohaisen Office: F208 Department of EECE
lectronic ircuits Transistor Bias ircuits Manar Mohaisen Office: F208 mail: manar.subhi@kut.ac.kr Department of Review of the Precedent Lecture Bipolar Junction Transistor (BJT) BJT haracteristics and
More informationCHAPTER 7  CD COMPANION
Chapter 7  CD companion 1 CHAPTER 7  CD COMPANION CD7.2 Biasing of SingleStage Amplifiers This companion section to the text contains detailed treatments of biasing circuits for both bipolar and fieldeffect
More informationThe BJT Differential Amplifier. Basic Circuit. DC Solution
c Copyright 010. W. Marshall Leach, Jr., Professor, Georgia Institute of Technology, School of Electrical and Computer Engineering. The BJT Differential Amplifier Basic Circuit Figure 1 shows the circuit
More informationAs light level increases, resistance decreases. As temperature increases, resistance decreases. Voltage across capacitor increases with time LDR
LDR As light level increases, resistance decreases thermistor As temperature increases, resistance decreases capacitor Voltage across capacitor increases with time Potential divider basics: R 1 1. Both
More informationCHAPTER 13. Solutions for Exercises
HPT 3 Solutions for xercises 3. The emitter current is gien by the Shockley equation: i S exp VT For operation with i, we hae exp >> S >>, and we can write VT i S exp VT Soling for, we hae 3.2 i 2 0 26ln
More informationLecture 7: Transistors and Amplifiers
Lecture 7: Transistors and Amplifiers Hybrid Transistor Model for small AC : The previous model for a transistor used one parameter (β, the current gain) to describe the transistor. doesn't explain many
More informationIntroduction to Transistors. Semiconductors Diodes Transistors
Introduction to Transistors Semiconductors Diodes Transistors 1 Semiconductors Typical semiconductors, like silicon and germanium, have four valence electrons which form atomic bonds with neighboring atoms
More informationFinal Exam. 55:041 Electronic Circuits. The University of Iowa. Fall 2013.
Final Exam Name: Max: 130 Points Question 1 In the circuit shown, the opamp is ideal, except for an input bias current I b = 1 na. Further, R F = 10K, R 1 = 100 Ω and C = 1 μf. The switch is opened at
More informationOperational Amplifiers
Operational Amplifiers A Linear IC circuit Operational Amplifier (opamp) An opamp is a highgain amplifier that has high input impedance and low output impedance. An ideal opamp has infinite gain and
More informationFYSE400 ANALOG ELECTRONICS
YSE400 ANALOG ELECTONCS LECTUE 3 Bipolar Sub Circuits 1 BPOLA SUB CCUTS Bipolar Current Sinks and Sources Transistor operates in forwardactive region. < < sat CE CN max CE < < + BN CN BN max CE N N N
More informationc Copyright 2009. W. Marshall Leach, Jr., Professor, Georgia Institute of Technology, School of Electrical and Computer Engineering. Feedback Amplifiers CollectionofSolvedProblems A collection of solved
More informationElectronic Circuits Summary
Electronic Circuits Summary Andreas Biri, DITET 6.06.4 Constants (@300K) ε 0 = 8.854 0 F m m 0 = 9. 0 3 kg k =.38 0 3 J K = 8.67 0 5 ev/k kt q = 0.059 V, q kt = 38.6, kt = 5.9 mev V Small Signal Equivalent
More informationCURRENT SOURCES EXAMPLE 1 Find the source voltage Vs and the current I1 for the circuit shown below SOURCE CONVERSIONS
CURRENT SOURCES EXAMPLE 1 Find the source voltage Vs and the current I1 for the circuit shown below EXAMPLE 2 Find the source voltage Vs and the current I1 for the circuit shown below SOURCE CONVERSIONS
More informationPOLYTECHNIC UNIVERSITY Electrical Engineering Department. EE SOPHOMORE LABORATORY Experiment 2 DC circuits and network theorems
POLYTECHNIC UNIVERSITY Electrical Engineering Department EE SOPHOMORE LABORATORY Experiment 2 DC circuits and network theorems Modified for Physics 18, Brooklyn College I. Overview of Experiment In this
More informationTutorial #4: Bias Point Analysis in Multisim
SCHOOL OF ENGINEERING AND APPLIED SCIENCE DEPARTMENT OF ELECTRICAL AND COMPUTER ENGINEERING ECE 2115: ENGINEERING ELECTRONICS LABORATORY Tutorial #4: Bias Point Analysis in Multisim INTRODUCTION When BJTs
More informationElectric Circuits I FINAL EXAMINATION
EECS:300, Electric Circuits I s6fs_elci7.fm  Electric Circuits I FINAL EXAMINATION Problems Points.. 3. 0 Total 34 Was the exam fair? yes no 5//6 EECS:300, Electric Circuits I s6fs_elci7.fm  Problem
More informationDEPARTMENT OF ECE UNIT VII BIASING & STABILIZATION AMPLIFIER:
UNIT VII IASING & STAILIZATION AMPLIFIE:  A circuit that increases the amplitude of given signal is an amplifier  Small ac signal applied to an amplifier is obtained as large a.c. signal of same frequency
More informationElectronics II. Midterm II
The University of Toledo su7ms_elct7.fm  Electronics II Midterm II Problems Points. 7. 7 3. 6 Total 0 Was the exam fair? yes no The University of Toledo su7ms_elct7.fm  Problem 7 points Equation ()
More informationElectronic Circuits. Bipolar Junction Transistors. Manar Mohaisen Office: F208 Department of EECE
Electronic Circuits Bipolar Junction Transistors Manar Mohaisen Office: F208 Email: manar.subhi@kut.ac.kr Department of EECE Review of Precedent Class Explain the Operation of the Zener Diode Explain Applications
More informationECE 546 Lecture 11 MOS Amplifiers
ECE 546 Lecture MOS Amplifiers Spring 208 Jose E. SchuttAine Electrical & Computer Engineering University of Illinois jesa@illinois.edu ECE 546 Jose Schutt Aine Amplifiers Definitions Used to increase
More information55:041 Electronic Circuits The University of Iowa Fall Exam 2
Exam 2 Name: Score /60 Question 1 One point unless indicated otherwise. 1. An engineer measures the (step response) rise time of an amplifier as t r = 0.35 μs. Estimate the 3 db bandwidth of the amplifier.
More informationWhat to Add Next time you update?
What to Add Next time you update? Work sheet with 3 and 4 resistors Create worksheet of tables Add Hypothesis and Questions Add Lab and Lecture Objectives Add equipment needed Add science standards Review
More informationECE342 Test 2 Solutions, Nov 4, :008:00pm, Closed Book (one page of notes allowed)
ECE342 Test 2 Solutions, Nov 4, 2008 6:008:00pm, Closed Book (one page of notes allowed) Please use the following physical constants in your calculations: Boltzmann s Constant: Electron Charge: Free
More informationMicroelectronic Circuit Design 4th Edition Errata  Updated 4/4/14
Chapter Text # Inside back cover: Triode region equation should not be squared! i D = K n v GS "V TN " v & DS % ( v DS $ 2 ' Page 49, first exercise, second answer: 1.35 x 10 6 cm/s Page 58, last exercise,
More informationmith College Computer Science CSC270 Spring 16 Circuits and Systems Lecture Notes Week 3 Dominique Thiébaut
mith College Computer Science CSC270 Spring 16 Circuits and Systems Lecture Notes Week 3 Dominique Thiébaut dthiebaut@smith.edu Crash Course in Electricity and Electronics Zero Physics background expected!
More informationFig. 1 Simple BJT (NPN) current mirror and its test circuit
1 Lab 01: Current Mirrors Total 30 points: 20 points for lab, 5 points for wellorganized report, 5 points for immaculate circuit on breadboard Note: There are two parts for this lab. You must answer the
More informationBiasing BJTs CHAPTER OBJECTIVES 4.1 INTRODUCTION
4 DC Biasing BJTs CHAPTER OBJECTIVES Be able to determine the dc levels for the variety of important BJT configurations. Understand how to measure the important voltage levels of a BJT transistor configuration
More informationPhiladelphia University Faculty of Engineering Communication and Electronics Engineering
Module: Electronics II Module Number: 6503 Philadelphia University Faculty o Engineering Communication and Electronics Engineering Ampliier CircuitsII BJT and FET Frequency Response Characteristics: 
More informationEECS 105: FALL 06 FINAL
University of California College of Engineering Department of Electrical Engineering and Computer Sciences Jan M. Rabaey TuTh 23:30 Wednesday December 13, 12:303:30pm EECS 105: FALL 06 FINAL NAME Last
More informationECE Analog Integrated Circuit Design  II P.E. Allen
Lecture 290 Feedback Analysis using Return Ratio (3/20/02) Page 2901 LECTURE 290 FEEDBACK CIRCUIT ANALYSIS USING RETURN RATIO (READING: GHLM 599613) Objective The objective of this presentation is: 1.)
More informationEE 321 Analog Electronics, Fall 2013 Homework #3 solution
EE 32 Analog Electronics, Fall 203 Homework #3 solution 2.47. (a) Use superposition to show that the output of the circuit in Fig. P2.47 is given by + [ Rf v N + R f v N2 +... + R ] f v Nn R N R N2 R [
More informationEE 330 Lecture 22. Small Signal Modelling Operating Points for Amplifier Applications Amplification with Transistor Circuits
EE 330 Lecture 22 Small Signal Modelling Operating Points for Amplifier Applications Amplification with Transistor Circuits Exam 2 Friday March 9 Exam 3 Friday April 13 Review Session for Exam 2: 6:00
More informationVI. Transistor amplifiers: Biasing and Small Signal Model
VI. Transistor amplifiers: iasing and Small Signal Model 6.1 Introduction Transistor amplifiers utilizing JT or FET are similar in design and analysis. Accordingly we will discuss JT amplifiers thoroughly.
More informationChapter 9 Bipolar Junction Transistor
hapter 9 ipolar Junction Transistor hapter 9  JT ipolar Junction Transistor JT haracteristics NPN, PNP JT D iasing ollector haracteristic and Load Line ipolar Junction Transistor (JT) JT is a threeterminal
More informationOperational amplifiers (Op amps)
Operational amplifiers (Op amps) v R o R i v i Av i v View it as an ideal amp. Take the properties to the extreme: R i, R o 0, A.?!?!?!?! v v i Av i v A Consequences: No voltage dividers at input or output.
More informationFigure Circuit for Question 1. Figure Circuit for Question 2
Exercises 10.7 Exercises Multiple Choice 1. For the circuit of Figure 10.44 the time constant is A. 0.5 ms 71.43 µs 2, 000 s D. 0.2 ms 4 Ω 2 Ω 12 Ω 1 mh 12u 0 () t V Figure 10.44. Circuit for Question
More informationSmall Signal Model. S. Sivasubramani EE101 Small Signal  Diode
Small Signal Model i v Small Signal Model i I D i d i D v d v D v V D Small Signal Model Mathematical Analysis V D  DC value v d  ac signal v D  Total signal (DC ac signal) Diode current and voltage
More informationEngineering 1620 Spring 2011 Answers to Homework # 4 Biasing and Small Signal Properties
Engineering 60 Spring 0 Answers to Homework # 4 Biasing and Small Signal Properties.).) The inband Thevenin equivalent source impedance is the parallel combination of R, R, and R3. ( Inband implies the
More informationBasic RL and RC Circuits RL TRANSIENTS: STORAGE CYCLE. Engineering Collage Electrical Engineering Dep. Dr. Ibrahim Aljubouri
st Class Basic RL and RC Circuits The RL circuit with D.C (steady state) The inductor is short time at Calculate the inductor current for circuits shown below. I L E R A I L E R R 3 R R 3 I L I L R 3 R
More informationECE 304: Design Issues for Voltage Follower as Output Stage S&S Chapter 14, pp
ECE 34: Design Issues for oltage Follower as Output Stage S&S Chapter 14, pp. 131133 Introduction The voltage follower provides a good buffer between a differential amplifier and a load in two ways: 1.
More informationEE201 Review Exam I. 1. The voltage Vx in the circuit below is: (1) 3V (2) 2V (3) 2V (4) 1V (5) 1V (6) None of above
EE201, Review Probs Test 1 page1 Spring 98 EE201 Review Exam I Multiple Choice (5 points each, no partial credit.) 1. The voltage Vx in the circuit below is: (1) 3V (2) 2V (3) 2V (4) 1V (5) 1V (6)
More informationEE 330 Lecture 25. Amplifier Biasing (precursor) TwoPort Amplifier Model
EE 330 Lecture 25 Amplifier Biasing (precursor) TwoPort Amplifier Model Amplifier Biasing (precursor) V CC R 1 V out V in B C E V EE Not convenient to have multiple dc power supplies Q very sensitive
More informationGEORGIA INSTITUTE OF TECHNOLOGY School of Electrical and Computer Engineering
NAME: GEORGIA INSTITUTE OF TECHNOLOGY School of Electrical and Computer Engineering ECE 4430 First Exam Closed Book and Notes Fall 2002 September 27, 2002 General Instructions: 1. Write on one side of
More informationSwitching circuits: basics and switching speed
ECE137B notes; copyright 2018 Switching circuits: basics and switching speed Mark Rodwell, University of California, Santa Barbara Amplifiers vs. switching circuits Some transistor circuit might have V
More informationESE319 Introduction to Microelectronics. Feedback Basics
Feedback Basics Feedback concept Feedback in emitter follower Stability Onepole feedback and root locus Frequency dependent feedback and root locus Gain and phase margins Conditions for closed loop stability
More information