Errata of CMOS Analog Circuit Design 2 nd Edition By Phillip E. Allen and Douglas R. Holberg

Size: px
Start display at page:

Download "Errata of CMOS Analog Circuit Design 2 nd Edition By Phillip E. Allen and Douglas R. Holberg"

Transcription

1 Errata 2 nd Ed. (5/22/2) Page Errata of CMOS Analog Circuit Design 2 nd Edition By Phillip E. Allen and Douglas R. Holberg Page Errata 82 Line 4 after figure 3.2-3, CISW CJSW 88 Line between Eqs. (3.3-2) and (3.3-3) should read as The channel transconductances, g m and g mbs, and the channel conductance, g ds, are defined as 02 Line 2 from bottom: 2φF 2φ F 5 Replace the NMOS symbol in Fig with the one for an NMOS transistor in Fig. 3.- of pp. 73 with the bulk connected to ground (assumed to be the lowest potential). 7 Fig. 4.-5, replace symbol with the NMOS symbol on pp Fig. 4.-6, replace symbol with the NMOS symbol on pp Eq should be: r out g m g ds g m 26 Fig , replace symbol with the NMOS symbol on pp Eq. (4.3-), no / sign in numerators 33 Solution part to Example 4.3-3: delete 2 in when calculating W/L 33 Solution part to Example 4.3-3: when calculating W/L 34 Line 3 from the bottom, delete is greater thanv T2 34 Eq. (4.4-): λv DS2 λv DS2 38 Line 2 of Example 4.4-: Change the values from W 5 ± 0.05µm and W 2 20 ± 0.05µm W 5 ± 0.µm and W 2 20 ± 0.µm 38 Second and fourth lines of the solution: W 5 ± 0.05µm W 5 ± 0.µm and W 2 20 ± 0.05µm W 2 20 ± 0.µm 38 Solution part to Example 4.4-, line 6: W W 5 ± 0.06 W W 5 ± 0. 4 ± (0./20) ± (0./5) 4 ± ± ± ± (±0.03) 38 Last line of Ex. 4.4-: ratio error is.25% ratio error is 0.75% 46 Eq. (4.5-9): S V REF V DD β(v REF -V T )R V DD V REF S V REF V DD 2β(V DD -V T )R V DD V REF 46 Eq. (4.5-0): V REF V GS R 2 R V REF V GS R R 2 55 Eq. (4.6-0): V BE -V G0 T (α - γ) k 0 q V BE0 -V G0 T (α - γ) k 0 q 56 Eq. (4.6-2): V BE V EB2 7 Eq. (5.-5): C out C bd C bd2 C gs2 C L C out C bd C bd2 C gs2 C L

2 Errata 2 nd Ed. (5/22/2) Page 2 72 Line 3: voltage gain is.92 V/V. voltage gain is V/V. 75 Eq. For v OUT (min): " " 78 Eq. (5.-32): e out e eq 88 Fig (a): The VCCS in parallel with r ds2 should be g m2 v gs2 instead of g m v gs. 88 Fig (b): The VCCS in parallel with the i 3 VCCS should be g m2 v gs2 instead of g m v gs. 97 Last line: λ P 0.5V - λ P 0.05V - 98 First eq. in step 5.): Should be V DS (sat) V IC (min) V SS V GS µA 0µA/V 2 (8.4) Last eq. on page: Should be W 5 2I 5 L 5 K N ' V DS (sat) rd line from bottom: giving a smaller W 5 /L 5. to allow for a variation in V TN. 98 2nd line from bottom: W /L (W 2 /L 2 ) 25, which gives W 5 /L W /L (W 2 /L 2 ) 40, which gives W 5 /L Last line:. V/V 47.4 V/V 2 First eq. on this page: 2 50A V 2 50A V 2 Line between st and 2nd eqs.: V DS2 (sat) 0.7 V. V DS2 (sat) 0.5 V Second eq. on this page: " " 2 Third eq. on this page: 0.8 V 0.7 V.0 V 0.5 V 225 Fig (a): The bulk VCCS for M should be g m v bs instead of g m v gs. 225 Fig (a): The VCCS for M2, g m2 v gs2 should be pointing upward. 225 Fig (a): The bulk VCCS for M2 should be g m2 v bs2 instead of g m2 v gs Fig (b): The fourth VCCS from the left should be g m2 v in instead of g m v in. 256 Fig : Replace GB with 0dB frequency 266 Fig (a): M4 M Fig (c): Corrected figure -A is shown. A is replaced by A. V i g mii V i C II Eq. (6.2-56) should be: V out (s) V in (s) -AC c C c C s g mii /AC c II s /[R II (C c C II )] 274 Table 6.3-, last line: The downward arrrow should be upward. C c R II Vout -

3 Errata 2 nd Ed. (5/22/2) Page Table 6.3-2, entry 3.): Delete the equation I 5 0 V DD V SS 2T s 274 Last line: S S 2 g m2 K 2 'I S 5 S 2 g m2 2 K 2 'I Fig c: Replace g ds V dd of the left-most controlled source with g ds V dd g m V out 303 r ds6 R r 2 ds6 R 2 g m0 Eq. (6.5-2): R A g m6 r gs6 g R m6 A g m6 r ds6 g m6 304 g m2 v in g m2 v in Eq. (6.5-6): 2 R 9 g ds5 g m7 r 2 R 9 g ds5 ) ds7 g m7 r ds7 304 R 9 g ds4 ) R 9 g ds5 ) Eq. (6.5-7): k g m7 r k ds7 g m7 r ds7 305 Eq. (6.5-20) should be written as, - p out R II 'C out 305 After Eq. (6.5-20), replace where C out by where R II [(2k)/(22k)] R II and C out Eq. (6.5-23): p 6 p 6 R 2 g C m0 6 R 2 g C m Line 9 from the bottom: Figure Figure I 5 8I 7 Table 6.5-3, Step 3, third column: S 5 K P V 2, S 7 SD5 K P V 2 SD S 5 2I 5 K P V SD5 2, S 7 2I 7 K P V SD7 2 V DD -V out (min) V DD -V out (max) Table 6.5-3, Step 3, fourth column: 2 2 8I 8I 9 Table 6.5-3, Step 4: S K N V 2, S 9 DS K N V 2 DS9 S 2I K N V DS 2, S 9 2I 9 K N V DS Table 6.5-3, Step 5: V SD4 (sat)/i 4 V SD3 (sat)/i I 4 2I 4 Table 6.5-3: Step 8: K P (V DD -V in (max)v T ) K P (V DD -V in (max)v T ) µA Third Eq: S 6 S 7 S 3 50µA/V 2 (0.25V) µA S 6 S 7 S 3 50µA/V 2 (0.25V)

4 Errata 2 nd Ed. (5/22/2) Page x0-6 Sixth Eq: 20 0x x x I 4 Last Eq: S 4 S 5 K P [V DD -V in (max)v T ] 2I 4 S 4 S 5 K P [V DD -V in (max)v T ] 2 33 Fig (b): The polarity of the upper V cm source should be reversed. 33 Fig (b): Replace the lower controlled source designation of ±A c V cm with ± A c (V V 2 ) Fourth line of Table 6.6-3: 6.0 U should be 6.0U 32 Caption of Fig : Input common-node should be Input common mode 343 Prob , 5 th line: Delete positive and 343 Fig. P6.3-0: Change the power supplies to ±.5V and increase the W/L value of M6 to 00/. 344 Prob : Add sentence Assume the parameters of the MOSFETs are given in Table Eq. (7.-8): R out (g ds6 g ds7 ) g m2 g (g m4 m6 g m8 )R o R out (g ds6 g ds7 ) g m2 g (g m4 m6 g m8 )R o 362 Eq. (7.-): Replace with 363 First line:..that R L is smaller than r ds...that the load reflected from the emitter to base of Q0 is negligible with respect to r π Last line: 469µS 300µS 364 g m9 γ N st Eq.: g mbs φ F V µS BS9 364 g m9 γ N g mbs φ F V µS BS9 469µS 2 nd Eq.: A MOS 469µS57.µS4µS5µS V/V 300µS A MOS 300µS36.5µS4µS5µS V/V th Eq.: A vd (0) (7777)(0.8765)(0.95) 6483 V/V

5 Errata 2 nd Ed. (5/22/2) Page 5 A vd (0) (7777)(0.8683)(0.95) 6422 V/V 373 Top line: p 8 -g m8 C p 8 8 -g m8 r ds8 g m0 C st complete paragraph: Replace this entire paragraph with the following: The input common mode range of the differential-out op amps may appear to be better because of the current source loads (M3 and M4 of Fig ). However, the upper input common mode range becomes restricted by M6 and M7 of Fig For example, in Fig , the upper input common mode range is V DD V SD (sat) where it is V DD V SD (sat) V T. for the folded-cascode differential output op amp of Fig Eq. (7.3-4): (v sg v gs4 ) (v gs v sg4 ) 394 Line after Eq. (7.4-5): g m /C g m /C c 394 I D Eq. (7.4-6): GB (n kt/q)c GB I D (n kt/q)c c 394 Eq. (7.4-7): SR I D5 C 2 I D C SR I D5 C 2 I D c C c rd line from bottom: Figure Figure Line : M5 to M4 M6 to M4 and M7 equals M6 M7 equals M I 2I st Eq.: V ds (sat) K N (W 2 /L 2 ) V ds (sat) K N (W /L ) 404 Eq. (7.5-3): g m6 R II 2 m6 2 II Line following Eq. (7.5-8): Fig Fig Line 7 including eqs.: µ(v rms ) µ(v rms ) 420 Line 3 (2 lines after Eq ): above V onn should be above V onp 434 Prob. 7.-0, 3 rd line: Example 7.- Example Prob. 7.-0: Add the sentence, Assume C π 0 pf and C µ pf. 434 Prob. 7.-0: Replace Example 7.- with Example Prob , 2 nd and 3 rd line: all transistor widths are transistors M through M widths are 436 Prob , 5 th line:..the correct bias voltage for M0 and M the W/L values of M2 through M5 436 Prob , last line: n p.5 and n n 2.5. n p.5, n n 2.5 and V t 26mV. 436 Prob , 2 nd line: of a over a 442 Fig. 8.-5, st line after Fig: V OH for (v P -v N ) > 0 V OH for (v P -v N ) > V IH 442 Fig. 8.-5, 3 rd line after Fig: V OL for (v P -v N ) < 0 V OL for (v P -v N ) > V IL 444 Next to last line: 2.5V should be -2.5V (g Eq. (8.2-4a): p C I g ds4 ) p ds2 g ds4 ) C I (g Eq. (8.2-4a): p 2 C II g ds4 ) p 2 ds6 g ds7 ) C II

6 Errata 2 nd Ed. (5/22/2) Page A v (0) A v (0) Eq. (8.2-5): A v (s) s p s A v (s) p s 2 p - s p - 2 g ds2 g ds4 st eq.: p C 5x0-6 ( ) I 0.2x x0 6 (.074MHz) g ds2 g ds4 p - C - 5x0-6 ( ) I 0.2x x0 6 (.074MHz) g ds6 g ds7 2 nd eq: p 2 C 95x0-6 ( ) II 5x0-2.7x0 6 (0.670MHz) g ds6 g ds7 p 2 - C - 95x0-6 ( ) II 5x x0 6 (0.670MHz) Eq. (8.2-6): v out (t) A v (0)V in p 2 e --tp p e --tp 2 p -p - 2 v out (t) A v (0)V in p 2 e -tp p e -tp 2 p -p - 2 p -p 2 Eq. (8.2-): t n tp t t τ n -tp Eq. (8.2-2): v out (t n ) - p e -t n - p -p 2 t n p e -t n - e -t n - t n e -t n v out (t n ) - e tp tp e -tp e -t n - t n e -t n 448 Line after Eq. (8.2-2): Delete where p is assumed to be unity. 448 Fig : Normalized Time (t n tp t/τ ) Normalized Time (t n -tp ) 454 Eq. at bottom of page: V V 455 Line 2: V TRP V V TRP V 455 Line 3: ΔV 2.5 V V V SG6.035 V. ΔV 2.5 V V V SG6.96 V. 455 Line 5: t fo 0.2pF.035V 30µA 6.9 ns t fo 0.2pF.96V 30µA 8 ns 455 Line 9:.465 V.304 V 455 Line 3:.465 V.304 V 455 Line 4: V V and 2.27 V V 455 β 6 Line 5: I 6 2 (V SG6 - V TP ) ( )2 2,342µA β 6 I 6 2 (V SG6 - V TP ) ( )2 2,580µA

7 Errata 2 nd Ed. (5/22/2) Page Line 9: t rout 5pF 2.5V 2,342µA t rout 5pF 2.5V 2,580µA-234µA 455 Line 2: 2.2 ns 3.3 ns 455 Last line: t ro 0.2pF.465V-(-2.5) 30µA 26.43ns t ro 0.2pF.304V-(-.000) 30µA 5.4ns 456 Line 3: ns ns. 456 Line 5: about ns. about 4 ns. 456 Fig : V TRP6.465V V TRP6.304V Also, lower the dashed line. 457 V OH V OL V Table 8.2-2, step 5: A v (0) V in (min) A v (0) OH -V OL V in (min) 459 V OH V OL V OH -V OL Tab;e 8.2-3, step 6: A v (0) V in (min) A v (0) V in (min) 465 Fig. 8.4-(b): The polarity of the voltage on C AZ should be reversed. 468 Fig : V TRP V OL R 2 and V TRP - V OH R Fig : R R 2 R V REF R R 2 R V 2 REF 470 Eq. (8.4-0): V TRP R R 2 R R V REF - R V 2 OL V TRP R R 2 R R V 2 REF - R V 2 OL 470 Eq. (8.4-2): V TRP R R 2 R R V REF - R V 2 OH V - TRP R R 2 R R V 2 REF - R V 2 OH 470 First line after Eq. (8.4-2): (R R 2 )/R (R R 2 )/R Eq. (8.4-3) and Eq. (8.4-4): R R R V 2 REF R 2 R R V 2 REF 470 First line after Eq. (8.4-4): R /(R R 2 ) R 2 /(R R 2 ) 470 R R 2 Fig : R R V 2 REF R R V 2 REF 47 st R and 2 nd equations: R R V 2 REF R 2 R R V 2 REF 47 Last line of Ex. 8.4-: V REF 2 V V REF V 478 Eq. (8.5-5): sc V o V o - s sc V o V o - s 480 Ex. 8.5-, line 3: ΔV i 0.0V in (min) and ΔV i 0.V in (min).

8 Errata 2 nd Ed. (5/22/2) Page 8 ΔV i 0.0(V OH V OL ) and ΔV i 0.(V OH V OL ) rd line from bottom: given a latch gain of 59.2 V/V. gives a latch gain of 370 V/V. 48 Last eq. on page should be: τ L 0.67C ox WL 3 2K'I 0.67(24.7x0-4 ) (0 )x x0-6 0x ns 482 First line: t 4.6τ L 496 ns g t 4.6τ L 0.55 ns 482 Second line: that t 2.3τ L 284 ns. g that t 2.3τ L ns. 482 Third line: and is 74 ns and 422 ns g and is ns and 0.80 ns 485 Fig : The pins FB and Reset associated with M2 should be reversed. 486 Fig Disconnect the line connecting the gate-drains of M3 and M4 489 Prob. 8.3-,3 rd line: what is the propagation what is the slew rate limited propagation 49 Reference 2: Two Novel Full Two Novel Fully 502 Eq. (9.-34): v(n n o )T z -not V(z) v(n n o )T z -no V(z) 502 Eq. (9.-36): V2(z) o - C 2 C C 2 z - C C C 2 z - V(z) o V2(z) o - C 2 C C 2 z - C C C 2 z - V(z) o 543 Line 9: EODD EVEN 543 Line 0: EVEN EODD 549 Line : Eq. (9.5-) Eq. (9.5-2) 552 Line 3: Eq. (9.6-4) Eq. (9.6-3) 554 Ex. 9.6-, 2 nd line of solution: /3.83. / Ex , 2 nd line of solution: /5.92. / ω PB ω SB Eq. (9.7-4): Ω n Ω ω n SB ω PB 564 Caption for Fig : for. for ε. 565 Title for Table 9.7-: for. for ε rd and 4 th line after Eq. (9.7-9): (ε ) (ε 0.526) nd line: α 42 α T ω 2 PB n f π c ω PB α 42 α T n f c π Last line: α T ω 2 PB n f π c ω PB α T n f c π Line 2: α α

9 Errata 2 nd Ed. (5/22/2) Page Eq. (9.7-24): Numerator term, (α 3 α 5 - α α 5-2α 3 )z (α 3 α 5 α α 5-2α 3 )z 580 Eq. (9.7-42): Ω n SW BW ω SB2 - ω SB Ω ω BP2 - ω n SW PB BW ω SB2 - ω SB ω PB2 - ω PB 587 Fig : The upper input capacitor should be labeled α 2 C Prob , st line following eq.: to 000 Hz to be 000 Hz 63 Eq. (0.-3): v OUT KV REF b 2 b 2 22 b b N 2N v OUT KV REF b 2 b 2 22 b b N 2N 68 Eq. (0.-5): Differential nonlinearity (DNL) V cx V s V 00% V cx s V - LSBs s Differential nonlinearity (DNL) (V cx V s ) V cx -V s V V s s V cx V - LSBs s 62 Line 4: ±LSB ±0.5LSB 629 v step (actual) - v step (ideal) v step (actual) Eq. (0.2-5): DNL v step (ideal) v step (ideal) - DNL v step (actual) - v step (ideal) v step (actual) - v step (ideal) v step (ideal) v step (ideal) v step (actual) v step (ideal) - LSBs 630 Last line of solution: DNL ± ±0.64 LSBs DNL ± 00 LSBs ± 0.0 LSBs 64 Eq The summation should be i0 through 7 not bi V REF bi V 2 i REF 2 i i0 i0 644 Fig : C M C C M- C, C M- 2C C M C and C M 2C C M C th line below Eq. (0.3-7): 2 K-. 2 M Eq. (0.3-24): INL INL(R) INL(C) ΔR 2M- R ΔC 2N- C LSBs INL INL(R) INL(C) ΔR 2K- R ΔC 2N- C LSBs 645 Eq. (0.3-25): DNL DNL(R) DNL(C) ΔR R (2N -) ΔC C LSBs

10 Errata 2 nd Ed. (5/22/2) Page 0 DNL DNL(R) DNL(C) ΔR R (2N -2 K ) ΔC C LSBs rd line after Eq. (0.3-25): of 2 K of 2 M nd sentence in Ex : To minimize the capacitor element spread and the number of resistors, choose M 5 and K 7. To emphasize the accuracy of the capacitors, choose M 7 and K th line: ΔR R (22 -) ΔC ΔR C R ( ) ΔC C th line: ΔC C ΔC C 0.02% is replaced by ΔC C ΔC C % 647 Lines and 2 of Ex , Solution: increase the value of M and decrease decrease the value of M and increase 647 Line 3 of Ex , Solution: choose K 5 and M 7 choose M 5 and K Eq. (0.6-4): N out N REF - v * in V REF N out N REF v * in V REF 67 Line 2: than then 675 Eq. (0.7-8): 2 2 b b 70 Fig The sign of the output of the integrator (v[nt s ]) returned to the summing junction in the left shaded box should be and not The correct Fig is shown: x[nt s ] - Integrator Delay - Integrator 2 Delay Quantizer y[nt s ] Figure Sampled-date model of a second-order ΔΣ modulator. 704 Eq. (0.9-2): 3 2L 2 π 2L M 2L 2 B - 3 2L 2 π 2L M 2L (2 B -) 2 79 Prob : if the divisor is 3 and 6. if the divisor is 3 and Fig. P0.3-7: The vertical resistor connected to the right of the resistor R x, should have the value of 2R rather than 4R and the 4R between the horizontal resistors R x and 4R should be deleted. 720 Fig. P0.3-8: The subscripts of the bits, b i, should all be decreased by. I.e. b b 0, b 2 b, etc. 720 Fig. P0.3-0: The subscripts for b should increase from right to left and not left to right. In addition, a vertical line should be drawn from the left most switch terminal labeled b 0 (old labeling) to the V REF battery. 723 Prob , lines 4-6: If the attenuation factors of 0.5 become 0.55, at what bit does the converter create an error? What is the analog output for this case? Replace with If the attenuation factors of 0.5 become 0.55, what is the analog output for this case?

11 Errata 2 nd Ed. (5/22/2) Page 723 Prob , st line: ADC DAC 724 Prob , st line: Give a switched For Fig , give a switched 725 Prob , last line: in part (a)? in part (a) if V REF V. 729 Fig. P0.9-9: f s 2f o f s 4f o 753 Ex. B.-4, st line of Solution: Eq. (B.-40), Eq. (B.-34), New corrections beyond : p. 387,

Errata of CMOS Analog Circuit Design 2 nd Edition By Phillip E. Allen and Douglas R. Holberg

Errata of CMOS Analog Circuit Design 2 nd Edition By Phillip E. Allen and Douglas R. Holberg Errata nd Ed. (0/9/07) Page Errata of CMOS Analog Circuit Design nd Edition By Phillip E. Allen and Douglas R. Holberg Page Errata 8 Line 4 after figure 3.3, CISW CJSW 0 Line from bottom: F F 5 Replace

More information

Lecture 310 Open-Loop Comparators (3/28/10) Page 310-1

Lecture 310 Open-Loop Comparators (3/28/10) Page 310-1 Lecture 310 Open-Loop Comparators (3/28/10) Page 310-1 LECTURE 310 OPEN-LOOP COMPARATORS LECTURE ORGANIZATION Outline Characterization of comparators Dominant pole, open-loop comparators Two-pole, open-loop

More information

Microelectronic Circuit Design 4th Edition Errata - Updated 4/4/14

Microelectronic Circuit Design 4th Edition Errata - Updated 4/4/14 Chapter Text # Inside back cover: Triode region equation should not be squared! i D = K n v GS "V TN " v & DS % ( v DS $ 2 ' Page 49, first exercise, second answer: -1.35 x 10 6 cm/s Page 58, last exercise,

More information

V in (min) and V in (min) = (V OH -V OL ) dv out (0) dt = A p 1 V in = = 10 6 = 1V/µs

V in (min) and V in (min) = (V OH -V OL ) dv out (0) dt = A p 1 V in = = 10 6 = 1V/µs ECE 642, Spring 2003 - Final Exam Page FINAL EXAMINATION (ALLEN) - SOLUTION (Average Score = 9/20) Problem - (20 points - This problem is required) An open-loop comparator has a gain of 0 4, a dominant

More information

ECE-343 Test 2: Mar 21, :00-8:00, Closed Book. Name : SOLUTION

ECE-343 Test 2: Mar 21, :00-8:00, Closed Book. Name : SOLUTION ECE-343 Test 2: Mar 21, 2012 6:00-8:00, Closed Book Name : SOLUTION 1. (25 pts) (a) Draw a circuit diagram for a differential amplifier designed under the following constraints: Use only BJTs. (You may

More information

LECTURE 380 TWO-STAGE OPEN-LOOP COMPARATORS - II (READING: AH ) Trip Point of an Inverter

LECTURE 380 TWO-STAGE OPEN-LOOP COMPARATORS - II (READING: AH ) Trip Point of an Inverter Lecture 380 Two-Stage Open-Loop Comparators-II (4/5/02) Page 380-1 LECTURE 380 TWO-STAGE OPEN-LOOP COMPARATORS - II (READING: AH 445-461) Trip Point of an Inverter V DD In order to determine the propagation

More information

ECE 6412, Spring Final Exam Page 1

ECE 6412, Spring Final Exam Page 1 ECE 64, Spring 005 Final Exam Page FINAL EXAMINATION SOLUTIONS (Average score = 89/00) Problem (0 points This problem is required) A comparator consists of an amplifier cascaded with a latch as shown below.

More information

ECE 6412, Spring Final Exam Page 1 FINAL EXAMINATION NAME SCORE /120

ECE 6412, Spring Final Exam Page 1 FINAL EXAMINATION NAME SCORE /120 ECE 6412, Spring 2002 Final Exam Page 1 FINAL EXAMINATION NAME SCORE /120 Problem 1O 2O 3 4 5 6 7 8 Score INSTRUCTIONS: This exam is closed book with four sheets of notes permitted. The exam consists of

More information

Lecture 320 Improved Open-Loop Comparators and Latches (3/28/10) Page 320-1

Lecture 320 Improved Open-Loop Comparators and Latches (3/28/10) Page 320-1 Lecture 32 Improved OpenLoop Comparators and es (3/28/1) Page 321 LECTURE 32 IMPROVED OPENLOOP COMPARATORS AND LATCHES LECTURE ORGANIZATION Outline Autozeroing Hysteresis Simple es Summary CMOS Analog

More information

ECE 438: Digital Integrated Circuits Assignment #4 Solution The Inverter

ECE 438: Digital Integrated Circuits Assignment #4 Solution The Inverter ECE 438: Digital Integrated Circuits Assignment #4 The Inverter Text: Chapter 5, Digital Integrated Circuits 2 nd Ed, Rabaey 1) Consider the CMOS inverter circuit in Figure P1 with the following parameters.

More information

University of Toronto. Final Exam

University of Toronto. Final Exam University of Toronto Final Exam Date - Dec 16, 013 Duration:.5 hrs ECE331 Electronic Circuits Lecturer - D. Johns ANSWER QUESTIONS ON THESE SHEETS USING BACKS IF NECESSARY 1. Equation sheet is on last

More information

EXTENDING THE RESOLUTION OF PARALLEL DIGITAL-ANALOG CONVERTERS

EXTENDING THE RESOLUTION OF PARALLEL DIGITAL-ANALOG CONVERTERS CMOS Analog IC Design Page 10.3-1 10.3 - EXTENDING THE RESOLUTION OF PARALLEL DIGITAL-ANALOG CONVERTERS TECHNIQUE: Divide the total resolution N into k smaller sub-dacs each with a resolution of N k. Result:

More information

ECE-343 Test 1: Feb 10, :00-8:00pm, Closed Book. Name : SOLUTION

ECE-343 Test 1: Feb 10, :00-8:00pm, Closed Book. Name : SOLUTION ECE-343 Test : Feb 0, 00 6:00-8:00pm, Closed Book Name : SOLUTION C Depl = C J0 + V R /V o ) m C Diff = τ F g m ω T = g m C µ + C π ω T = g m I / D C GD + C or V OV GS b = τ i τ i = R i C i ω H b Z = Z

More information

3. Basic building blocks. Analog Design for CMOS VLSI Systems Franco Maloberti

3. Basic building blocks. Analog Design for CMOS VLSI Systems Franco Maloberti Inverter with active load It is the simplest gain stage. The dc gain is given by the slope of the transfer characteristics. Small signal analysis C = C gs + C gs,ov C 2 = C gd + C gd,ov + C 3 = C db +

More information

Homework Assignment 08

Homework Assignment 08 Homework Assignment 08 Question 1 (Short Takes) Two points each unless otherwise indicated. 1. Give one phrase/sentence that describes the primary advantage of an active load. Answer: Large effective resistance

More information

6.012 Electronic Devices and Circuits Spring 2005

6.012 Electronic Devices and Circuits Spring 2005 6.012 Electronic Devices and Circuits Spring 2005 May 16, 2005 Final Exam (200 points) -OPEN BOOK- Problem NAME RECITATION TIME 1 2 3 4 5 Total General guidelines (please read carefully before starting):

More information

Lecture 04: Single Transistor Ampliers

Lecture 04: Single Transistor Ampliers Lecture 04: Single Transistor Ampliers Analog IC Design Dr. Ryan Robucci Department of Computer Science and Electrical Engineering, UMBC Spring 2015 Dr. Ryan Robucci Lecture IV 1 / 37 Single-Transistor

More information

EE105 Fall 2014 Microelectronic Devices and Circuits. NMOS Transistor Capacitances: Saturation Region

EE105 Fall 2014 Microelectronic Devices and Circuits. NMOS Transistor Capacitances: Saturation Region EE105 Fall 014 Microelectronic Devices and Circuits Prof. Ming C. Wu wu@eecs.berkeley.edu 511 Sutardja Dai Hall (SDH) 1 NMOS Transistor Capacitances: Saturation Region Drain no longer connected to channel

More information

1/13/12 V DS. I d V GS. C ox ( = f (V GS ,V DS ,V SB = I D. + i d + I ΔV + I ΔV BS V BS. 19 January 2012

1/13/12 V DS. I d V GS. C ox ( = f (V GS ,V DS ,V SB = I D. + i d + I ΔV + I ΔV BS V BS. 19 January 2012 /3/ 9 January 0 Study the linear model of MOS transistor around an operating point." MOS in saturation: V GS >V th and V S >V GS -V th " VGS vi - I d = I i d VS I d = µ n ( L V V γ Φ V Φ GS th0 F SB F

More information

ECE-342 Test 3: Nov 30, :00-8:00, Closed Book. Name : Solution

ECE-342 Test 3: Nov 30, :00-8:00, Closed Book. Name : Solution ECE-342 Test 3: Nov 30, 2010 6:00-8:00, Closed Book Name : Solution All solutions must provide units as appropriate. Unless otherwise stated, assume T = 300 K. 1. (25 pts) Consider the amplifier shown

More information

Chapter 4 Field-Effect Transistors

Chapter 4 Field-Effect Transistors Chapter 4 Field-Effect Transistors Microelectronic Circuit Design Richard C. Jaeger Travis N. Blalock 5/5/11 Chap 4-1 Chapter Goals Describe operation of MOSFETs. Define FET characteristics in operation

More information

MICROELECTRONIC CIRCUIT DESIGN Second Edition

MICROELECTRONIC CIRCUIT DESIGN Second Edition MICROELECTRONIC CIRCUIT DESIGN Second Edition Richard C. Jaeger and Travis N. Blalock Answers to Selected Problems Updated 10/23/06 Chapter 1 1.3 1.52 years, 5.06 years 1.5 2.00 years, 6.65 years 1.8 113

More information

Lecture 400 Discrete-Time Comparators (4/8/02) Page 400-1

Lecture 400 Discrete-Time Comparators (4/8/02) Page 400-1 Lecture 400 DiscreteTime omparators (4/8/02) Page 4001 LETURE 400 DISRETETIME OMPARATORS (LATHES) (READING: AH 475483) Objective The objective of this presentation is: 1.) Illustrate discretetime comparators

More information

Homework Assignment 09

Homework Assignment 09 Homework Assignment 09 Question 1 (Short Takes) Two points each unless otherwise indicated. 1. What is the 3-dB bandwidth of the amplifier shown below if r π = 2.5K, r o = 100K, g m = 40 ms, and C L =

More information

Quantitative MOSFET. Step 1. Connect the MOS capacitor results for the electron charge in the inversion layer Q N to the drain current.

Quantitative MOSFET. Step 1. Connect the MOS capacitor results for the electron charge in the inversion layer Q N to the drain current. Quantitative MOSFET Step 1. Connect the MOS capacitor results for the electron charge in the inversion layer Q N to the drain current. V DS _ n source polysilicon gate y = y * 0 x metal interconnect to

More information

Final Exam. 55:041 Electronic Circuits. The University of Iowa. Fall 2013.

Final Exam. 55:041 Electronic Circuits. The University of Iowa. Fall 2013. Final Exam Name: Max: 130 Points Question 1 In the circuit shown, the op-amp is ideal, except for an input bias current I b = 1 na. Further, R F = 10K, R 1 = 100 Ω and C = 1 μf. The switch is opened at

More information

EECS 141: FALL 05 MIDTERM 1

EECS 141: FALL 05 MIDTERM 1 University of California College of Engineering Department of Electrical Engineering and Computer Sciences D. Markovic TuTh 11-1:3 Thursday, October 6, 6:3-8:pm EECS 141: FALL 5 MIDTERM 1 NAME Last SOLUTION

More information

PRACTICE PROBLEMS FOR CMOS ANALOG CIRCUIT DESIGN, 2 ND EDITION

PRACTICE PROBLEMS FOR CMOS ANALOG CIRCUIT DESIGN, 2 ND EDITION Practice Problems (5/27/07) Page PRACTICE PROBLEMS FOR CMOS ANALOG CIRCUIT DESIGN, 2 ND EDITION TECHNOLOGY Problem (044430E3P5) The following questions pertain to a standard npn BJT process. a.) Give the

More information

Lecture 37: Frequency response. Context

Lecture 37: Frequency response. Context EECS 05 Spring 004, Lecture 37 Lecture 37: Frequency response Prof J. S. Smith EECS 05 Spring 004, Lecture 37 Context We will figure out more of the design parameters for the amplifier we looked at in

More information

Assignment 3 ELEC 312/Winter 12 R.Raut, Ph.D.

Assignment 3 ELEC 312/Winter 12 R.Raut, Ph.D. Page 1 of 3 ELEC 312: ELECTRONICS II : ASSIGNMENT-3 Department of Electrical and Computer Engineering Winter 2012 1. A common-emitter amplifier that can be represented by the following equivalent circuit,

More information

MOS Transistor Theory

MOS Transistor Theory MOS Transistor Theory So far, we have viewed a MOS transistor as an ideal switch (digital operation) Reality: less than ideal EE 261 Krish Chakrabarty 1 Introduction So far, we have treated transistors

More information

Advanced Current Mirrors and Opamps

Advanced Current Mirrors and Opamps Advanced Current Mirrors and Opamps David Johns and Ken Martin (johns@eecg.toronto.edu) (martin@eecg.toronto.edu) slide 1 of 26 Wide-Swing Current Mirrors I bias I V I in out out = I in V W L bias ------------

More information

MOS Transistor Theory

MOS Transistor Theory CHAPTER 3 MOS Transistor Theory Outline 2 1. Introduction 2. Ideal I-V Characteristics 3. Nonideal I-V Effects 4. C-V Characteristics 5. DC Transfer Characteristics 6. Switch-level RC Delay Models MOS

More information

CMOS Logic Gates. University of Connecticut 181

CMOS Logic Gates. University of Connecticut 181 CMOS Logic Gates University of Connecticut 181 Basic CMOS Inverter Operation V IN P O N O p-channel enhancementtype MOSFET; V T < 0 n-channel enhancementtype MOSFET; V T > 0 If V IN 0, N O is cut off and

More information

Common Drain Stage (Source Follower) Claudio Talarico, Gonzaga University

Common Drain Stage (Source Follower) Claudio Talarico, Gonzaga University Common Drain Stage (Source Follower) Claudio Talarico, Gonzaga University Common Drain Stage v gs v i - v o V DD v bs - v o R S Vv IN i v i G C gd C+C gd gb B&D v s vv OUT o + V S I B R L C L v gs - C

More information

Lecture 13 MOSFET as an amplifier with an introduction to MOSFET small-signal model and small-signal schematics. Lena Peterson

Lecture 13 MOSFET as an amplifier with an introduction to MOSFET small-signal model and small-signal schematics. Lena Peterson Lecture 13 MOSFET as an amplifier with an introduction to MOSFET small-signal model and small-signal schematics Lena Peterson 2015-10-13 Outline (1) Why is the CMOS inverter gain not infinite? Large-signal

More information

Fig. 1 CMOS Transistor Circuits (a) Inverter Out = NOT In, (b) NOR-gate C = NOT (A or B)

Fig. 1 CMOS Transistor Circuits (a) Inverter Out = NOT In, (b) NOR-gate C = NOT (A or B) 1 Introduction to Transistor-Level Logic Circuits 1 By Prawat Nagvajara At the transistor level of logic circuits, transistors operate as switches with the logic variables controlling the open or closed

More information

University of Pennsylvania Department of Electrical Engineering. ESE 570 Midterm Exam March 14, 2013 FORMULAS AND DATA

University of Pennsylvania Department of Electrical Engineering. ESE 570 Midterm Exam March 14, 2013 FORMULAS AND DATA University of Pennsylvania Department of Electrical Engineering ESE 570 Midterm Exam March 4, 03 FORMULAS AND DATA. PHYSICAL CONSTANTS: n i = intrinsic concentration undoped) silicon =.45 x 0 0 cm -3 @

More information

ECE 497 JS Lecture - 12 Device Technologies

ECE 497 JS Lecture - 12 Device Technologies ECE 497 JS Lecture - 12 Device Technologies Spring 2004 Jose E. Schutt-Aine Electrical & Computer Engineering University of Illinois jose@emlab.uiuc.edu 1 NMOS Transistor 2 ρ Source channel charge density

More information

Figure 1: MOSFET symbols.

Figure 1: MOSFET symbols. c Copyright 2008. W. Marshall Leach, Jr., Professor, Georgia Institute of Technology, School of Electrical and Computer Engineering. The MOSFET Device Symbols Whereas the JFET has a diode junction between

More information

Microelectronics Main CMOS design rules & basic circuits

Microelectronics Main CMOS design rules & basic circuits GBM8320 Dispositifs médicaux intelligents Microelectronics Main CMOS design rules & basic circuits Mohamad Sawan et al. Laboratoire de neurotechnologies Polystim mohamad.sawan@polymtl.ca M5418 6 & 7 September

More information

ECE 546 Lecture 10 MOS Transistors

ECE 546 Lecture 10 MOS Transistors ECE 546 Lecture 10 MOS Transistors Spring 2018 Jose E. Schutt-Aine Electrical & Computer Engineering University of Illinois jesa@illinois.edu NMOS Transistor NMOS Transistor N-Channel MOSFET Built on p-type

More information

Microelectronic Circuit Design Fourth Edition - Part I Solutions to Exercises

Microelectronic Circuit Design Fourth Edition - Part I Solutions to Exercises Page Microelectronic Circuit esign Fourth Edition - Part I Solutions to Exercises CHAPTER V LSB 5.V 0 bits 5.V 04bits 5.00 mv V 5.V MSB.560V 000000 9 + 8 + 4 + 0 785 0 V O 785 5.00mV or ) 5.V 3.95 V V

More information

6.2 INTRODUCTION TO OP AMPS

6.2 INTRODUCTION TO OP AMPS Introduction to Op Amps (7/17/00) Page 1 6.2 INTRODUCTION TO OP AMPS INTRODUCTION Objective The objective of this presentation is: 1.) Characterize the operational amplifier 2.) Illustrate the analysis

More information

Lecture 4: CMOS Transistor Theory

Lecture 4: CMOS Transistor Theory Introduction to CMOS VLSI Design Lecture 4: CMOS Transistor Theory David Harris, Harvey Mudd College Kartik Mohanram and Steven Levitan University of Pittsburgh Outline q Introduction q MOS Capacitor q

More information

CMOS Inverter (static view)

CMOS Inverter (static view) Review: Design Abstraction Levels SYSTEM CMOS Inverter (static view) + MODULE GATE [Adapted from Chapter 5. 5.3 CIRCUIT of G DEVICE Rabaey s Digital Integrated Circuits,, J. Rabaey et al.] S D Review:

More information

PARALLEL DIGITAL-ANALOG CONVERTERS

PARALLEL DIGITAL-ANALOG CONVERTERS CMOS Analog IC Design Page 10.2-1 10.2 - PARALLEL DIGITAL-ANALOG CONVERTERS CLASSIFICATION OF DIGITAL-ANALOG CONVERTERS CMOS Analog IC Design Page 10.2-2 CURRENT SCALING DIGITAL-ANALOG CONVERTERS GENERAL

More information

Microelectronics Part 1: Main CMOS circuits design rules

Microelectronics Part 1: Main CMOS circuits design rules GBM8320 Dispositifs Médicaux telligents Microelectronics Part 1: Main CMOS circuits design rules Mohamad Sawan et al. Laboratoire de neurotechnologies Polystim! http://www.cours.polymtl.ca/gbm8320/! med-amine.miled@polymtl.ca!

More information

P. R. Nelson 1 ECE418 - VLSI. Midterm Exam. Solutions

P. R. Nelson 1 ECE418 - VLSI. Midterm Exam. Solutions P. R. Nelson 1 ECE418 - VLSI Midterm Exam Solutions 1. (8 points) Draw the cross-section view for A-A. The cross-section view is as shown below.. ( points) Can you tell which of the metal1 regions is the

More information

Lecture 140 Simple Op Amps (2/11/02) Page 140-1

Lecture 140 Simple Op Amps (2/11/02) Page 140-1 Lecture 40 Simple Op Amps (2//02) Page 40 LECTURE 40 SIMPLE OP AMPS (READING: TextGHLM 425434, 453454, AH 249253) INTRODUCTION The objective of this presentation is:.) Illustrate the analysis of BJT and

More information

Chapter 2 CMOS Transistor Theory. Jin-Fu Li Department of Electrical Engineering National Central University Jungli, Taiwan

Chapter 2 CMOS Transistor Theory. Jin-Fu Li Department of Electrical Engineering National Central University Jungli, Taiwan Chapter 2 CMOS Transistor Theory Jin-Fu Li Department of Electrical Engineering National Central University Jungli, Taiwan Outline Introduction MOS Device Design Equation Pass Transistor Jin-Fu Li, EE,

More information

Chapter 13 Small-Signal Modeling and Linear Amplification

Chapter 13 Small-Signal Modeling and Linear Amplification Chapter 13 Small-Signal Modeling and Linear Amplification Microelectronic Circuit Design Richard C. Jaeger Travis N. Blalock 1/4/12 Chap 13-1 Chapter Goals Understanding of concepts related to: Transistors

More information

Lecture 15: MOS Transistor models: Body effects, SPICE models. Context. In the last lecture, we discussed the modes of operation of a MOS FET:

Lecture 15: MOS Transistor models: Body effects, SPICE models. Context. In the last lecture, we discussed the modes of operation of a MOS FET: Lecture 15: MOS Transistor models: Body effects, SPICE models Context In the last lecture, we discussed the modes of operation of a MOS FET: oltage controlled resistor model I- curve (Square-Law Model)

More information

Step 1. Finding V M. Goal: Þnd V M = input voltage for the output = V M both transistors are saturated at V IN = V M since

Step 1. Finding V M. Goal: Þnd V M = input voltage for the output = V M both transistors are saturated at V IN = V M since Step 1. Finding V M Goal: Þnd V M = input voltage for the output = V M both transistors are saturated at V IN = V M since V DSn = V M - 0 > V M - V Tn V SDp = V DD - V M = (V DD - V M ) V Tp Equate drain

More information

CMOS Logic Gates. University of Connecticut 172

CMOS Logic Gates. University of Connecticut 172 CMOS Logic Gates University of Connecticut 172 Basic CMOS Inverter Operation V IN P O N O p-channel enhancementtype MOSFET; V T < 0 n-channel enhancementtype MOSFET; V T > 0 If V IN 0, N O is cut off and

More information

CMPEN 411 VLSI Digital Circuits. Lecture 04: CMOS Inverter (static view)

CMPEN 411 VLSI Digital Circuits. Lecture 04: CMOS Inverter (static view) CMPEN 411 VLSI Digital Circuits Lecture 04: CMOS Inverter (static view) Kyusun Choi [Adapted from Rabaey s Digital Integrated Circuits, Second Edition, 2003 J. Rabaey, A. Chandrakasan, B. Nikolic] CMPEN

More information

Electronics II. Midterm II

Electronics II. Midterm II The University of Toledo f4ms_elct7.fm - Section Electronics II Midterm II Problems Points. 7. 7 3. 6 Total 0 Was the exam fair? yes no The University of Toledo f4ms_elct7.fm - Problem 7 points Given in

More information

PASS-TRANSISTOR LOGIC. INEL Fall 2014

PASS-TRANSISTOR LOGIC. INEL Fall 2014 PASS-TRANSISTOR LOGIC INEL 4207 - Fall 2014 Figure 15.5 Conceptual pass-transistor logic gates. (a) Two switches, controlled by the input variables B and C, when connected in series in the path between

More information

and V DS V GS V T (the saturation region) I DS = k 2 (V GS V T )2 (1+ V DS )

and V DS V GS V T (the saturation region) I DS = k 2 (V GS V T )2 (1+ V DS ) ECE 4420 Spring 2005 Page 1 FINAL EXAMINATION NAME SCORE /100 Problem 1O 2 3 4 5 6 7 Sum Points INSTRUCTIONS: This exam is closed book. You are permitted four sheets of notes (three of which are your sheets

More information

CMOS INVERTER. Last Lecture. Metrics for qualifying digital circuits. »Cost» Reliability» Speed (delay)»performance

CMOS INVERTER. Last Lecture. Metrics for qualifying digital circuits. »Cost» Reliability» Speed (delay)»performance CMOS INVERTER Last Lecture Metrics for qualifying digital circuits»cost» Reliability» Speed (delay)»performance 1 Today s lecture The CMOS inverter at a glance An MOS transistor model for manual analysis

More information

The transistor is not in the cutoff region. the transistor is in the saturation region. To see this, recognize that in a long-channel transistor ifv

The transistor is not in the cutoff region. the transistor is in the saturation region. To see this, recognize that in a long-channel transistor ifv ECE 440 Spring 005 Page 1 Homework Assignment No. Solutions P.4 For each transistor, first determine if the transistor is in cutoff by checking to see if GS is less than or greater than. may have to be

More information

The Devices. Digital Integrated Circuits A Design Perspective. Jan M. Rabaey Anantha Chandrakasan Borivoje Nikolic. July 30, 2002

The Devices. Digital Integrated Circuits A Design Perspective. Jan M. Rabaey Anantha Chandrakasan Borivoje Nikolic. July 30, 2002 Digital Integrated Circuits A Design Perspective Jan M. Rabaey Anantha Chandrakasan Borivoje Nikolic The Devices July 30, 2002 Goal of this chapter Present intuitive understanding of device operation Introduction

More information

Switched-Capacitor Circuits David Johns and Ken Martin University of Toronto

Switched-Capacitor Circuits David Johns and Ken Martin University of Toronto Switched-Capacitor Circuits David Johns and Ken Martin University of Toronto (johns@eecg.toronto.edu) (martin@eecg.toronto.edu) University of Toronto 1 of 60 Basic Building Blocks Opamps Ideal opamps usually

More information

EXAMPLE DESIGN PART 2

EXAMPLE DESIGN PART 2 ECE37 Advanced Analog Circuits Lecture 4 EXAMPLE DESIGN PART 2 Richard Schreier richard.schreier@analog.com Trevor Caldwell trevor.caldwell@utoronto.ca Course Goals Deepen understanding of CMOS analog

More information

ELEN 610 Data Converters

ELEN 610 Data Converters Spring 04 S. Hoyos - EEN-60 ELEN 60 Data onverters Sebastian Hoyos Texas A&M University Analog and Mixed Signal Group Spring 04 S. Hoyos - EEN-60 Electronic Noise Signal to Noise ratio SNR Signal Power

More information

EE247 Lecture 16. Serial Charge Redistribution DAC

EE247 Lecture 16. Serial Charge Redistribution DAC EE47 Lecture 16 D/A Converters D/A examples Serial charge redistribution DAC Practical aspects of current-switch DACs Segmented current-switch DACs DAC self calibration techniques Current copiers Dynamic

More information

Lecture 12 Digital Circuits (II) MOS INVERTER CIRCUITS

Lecture 12 Digital Circuits (II) MOS INVERTER CIRCUITS Lecture 12 Digital Circuits (II) MOS INVERTER CIRCUITS Outline NMOS inverter with resistor pull-up The inverter NMOS inverter with current-source pull-up Complementary MOS (CMOS) inverter Static analysis

More information

Introduction and Background

Introduction and Background Analog CMOS Integrated Circuit Design Introduction and Background Dr. Jawdat Abu-Taha Department of Electrical and Computer Engineering Islamic University of Gaza jtaha@iugaza.edu.ps 1 Marking Assignments

More information

CHAPTER 3: TRANSISTOR MOSFET DR. PHAM NGUYEN THANH LOAN. Hà Nội, 9/24/2012

CHAPTER 3: TRANSISTOR MOSFET DR. PHAM NGUYEN THANH LOAN. Hà Nội, 9/24/2012 1 CHAPTER 3: TRANSISTOR MOSFET DR. PHAM NGUYEN THANH LOAN Hà Nội, 9/24/2012 Chapter 3: MOSFET 2 Introduction Classifications JFET D-FET (Depletion MOS) MOSFET (Enhancement E-FET) DC biasing Small signal

More information

Homework Assignment 11

Homework Assignment 11 Homework Assignment Question State and then explain in 2 3 sentences, the advantage of switched capacitor filters compared to continuous-time active filters. (3 points) Continuous time filters use resistors

More information

MOS Transistor I-V Characteristics and Parasitics

MOS Transistor I-V Characteristics and Parasitics ECEN454 Digital Integrated Circuit Design MOS Transistor I-V Characteristics and Parasitics ECEN 454 Facts about Transistors So far, we have treated transistors as ideal switches An ON transistor passes

More information

THE INVERTER. Inverter

THE INVERTER. Inverter THE INVERTER DIGITAL GATES Fundamental Parameters Functionality Reliability, Robustness Area Performance» Speed (delay)» Power Consumption» Energy Noise in Digital Integrated Circuits v(t) V DD i(t) (a)

More information

MOSFET: Introduction

MOSFET: Introduction E&CE 437 Integrated VLSI Systems MOS Transistor 1 of 30 MOSFET: Introduction Metal oxide semiconductor field effect transistor (MOSFET) or MOS is widely used for implementing digital designs Its major

More information

Device Models (PN Diode, MOSFET )

Device Models (PN Diode, MOSFET ) Device Models (PN Diode, MOSFET ) Instructor: Steven P. Levitan steve@ece.pitt.edu TA: Gayatri Mehta, José Martínez Book: Digital Integrated Circuits: A Design Perspective; Jan Rabaey Lab Notes: Handed

More information

Systematic Design of Operational Amplifiers

Systematic Design of Operational Amplifiers Systematic Design of Operational Amplifiers Willy Sansen KULeuven, ESAT-MICAS Leuven, Belgium willy.sansen@esat.kuleuven.be Willy Sansen 10-05 061 Table of contents Design of Single-stage OTA Design of

More information

3. Design a stick diagram for the PMOS logic shown below [16] Y = (A + B).C. 4. Design a layout diagram for the CMOS logic shown below [16]

3. Design a stick diagram for the PMOS logic shown below [16] Y = (A + B).C. 4. Design a layout diagram for the CMOS logic shown below [16] Code No: RR420203 Set No. 1 1. (a) Find g m and r ds for an n-channel transistor with V GS = 1.2V; V tn = 0.8V; W/L = 10; µncox = 92 µa/v 2 and V DS = Veff + 0.5V The out put impedance constant. λ = 95.3

More information

Electronic Circuits Summary

Electronic Circuits Summary Electronic Circuits Summary Andreas Biri, D-ITET 6.06.4 Constants (@300K) ε 0 = 8.854 0 F m m 0 = 9. 0 3 kg k =.38 0 3 J K = 8.67 0 5 ev/k kt q = 0.059 V, q kt = 38.6, kt = 5.9 mev V Small Signal Equivalent

More information

Today s lecture. EE141- Spring 2003 Lecture 4. Design Rules CMOS Inverter MOS Transistor Model

Today s lecture. EE141- Spring 2003 Lecture 4. Design Rules CMOS Inverter MOS Transistor Model - Spring 003 Lecture 4 Design Rules CMOS Inverter MOS Transistor Model Today s lecture Design Rules The CMOS inverter at a glance An MOS transistor model for manual analysis Important! Labs start next

More information

EE 330. Lecture 35. Parasitic Capacitances in MOS Devices

EE 330. Lecture 35. Parasitic Capacitances in MOS Devices EE 330 Lecture 35 Parasitic Capacitances in MOS Devices Exam 2 Wed Oct 24 Exam 3 Friday Nov 16 Review from Last Lecture Cascode Configuration Discuss V CC gm1 gm1 I B VCC V OUT g02 g01 A - β β VXX Q 2

More information

ECE 546 Lecture 11 MOS Amplifiers

ECE 546 Lecture 11 MOS Amplifiers ECE 546 Lecture MOS Amplifiers Spring 208 Jose E. Schutt-Aine Electrical & Computer Engineering University of Illinois jesa@illinois.edu ECE 546 Jose Schutt Aine Amplifiers Definitions Used to increase

More information

ENGR890 Digital VLSI Design Fall Lecture 4: CMOS Inverter (static view)

ENGR890 Digital VLSI Design Fall Lecture 4: CMOS Inverter (static view) ENGR89 Digital VLSI Design Fall 5 Lecture 4: CMOS Inverter (static view) [Adapted from Chapter 5 of Digital Integrated Circuits, 3, J. Rabaey et al.] [Also borrowed from Vijay Narayanan and Mary Jane Irwin]

More information

EEC 116 Lecture #3: CMOS Inverters MOS Scaling. Rajeevan Amirtharajah University of California, Davis Jeff Parkhurst Intel Corporation

EEC 116 Lecture #3: CMOS Inverters MOS Scaling. Rajeevan Amirtharajah University of California, Davis Jeff Parkhurst Intel Corporation EEC 116 Lecture #3: CMOS Inverters MOS Scaling Rajeevan Amirtharajah University of California, Davis Jeff Parhurst Intel Corporation Outline Review: Inverter Transfer Characteristics Lecture 3: Noise Margins,

More information

ESE570 Spring University of Pennsylvania Department of Electrical and System Engineering Digital Integrated Cicruits AND VLSI Fundamentals

ESE570 Spring University of Pennsylvania Department of Electrical and System Engineering Digital Integrated Cicruits AND VLSI Fundamentals University of Pennsylvania Department of Electrical and System Engineering Digital Integrated Cicruits AND VLSI Fundamentals ESE570, Spring 017 Final Wednesday, May 3 4 Problems with point weightings shown.

More information

Lecture 14 - Digital Circuits (III) CMOS. April 1, 2003

Lecture 14 - Digital Circuits (III) CMOS. April 1, 2003 6.12 - Microelectronic Devices and Circuits - Spring 23 Lecture 14-1 Lecture 14 - Digital Circuits (III) CMOS April 1, 23 Contents: 1. Complementary MOS (CMOS) inverter: introduction 2. CMOS inverter:

More information

EE 330 Lecture 16. MOS Device Modeling p-channel n-channel comparisons Model consistency and relationships CMOS Process Flow

EE 330 Lecture 16. MOS Device Modeling p-channel n-channel comparisons Model consistency and relationships CMOS Process Flow EE 330 Lecture 16 MOS Device Modeling p-channel n-channel comparisons Model consistency and relationships CMOS Process Flow Review from Last Time Operation Regions by Applications Id I D 300 250 200 150

More information

Biasing the CE Amplifier

Biasing the CE Amplifier Biasing the CE Amplifier Graphical approach: plot I C as a function of the DC base-emitter voltage (note: normally plot vs. base current, so we must return to Ebers-Moll): I C I S e V BE V th I S e V th

More information

6.012 MICROELECTRONIC DEVICES AND CIRCUITS

6.012 MICROELECTRONIC DEVICES AND CIRCUITS MASSACHUSETTS INSTITUTE OF TECHNOLOGY Department of Electrical Engineering and Computer Science 6.012 MICROELECTRONIC DEVICES AND CIRCUITS Answers to Exam 2 Spring 2008 Problem 1: Graded by Prof. Fonstad

More information

Analog Circuit Design Discrete & Integrated

Analog Circuit Design Discrete & Integrated This document contains the Errata for the textbook Analog Circuit Design Discrete & Integrated The Hardcover Edition (shown below at the left and published by McGraw-Hill Education) was preceded by a Spiral-Bound

More information

EEC 118 Lecture #2: MOSFET Structure and Basic Operation. Rajeevan Amirtharajah University of California, Davis Jeff Parkhurst Intel Corporation

EEC 118 Lecture #2: MOSFET Structure and Basic Operation. Rajeevan Amirtharajah University of California, Davis Jeff Parkhurst Intel Corporation EEC 118 Lecture #2: MOSFET Structure and Basic Operation Rajeevan Amirtharajah University of California, Davis Jeff Parkhurst Intel Corporation Announcements Lab 1 this week, report due next week Bring

More information

UNISONIC TECHNOLOGIES CO., LTD L16B45 Preliminary CMOS IC

UNISONIC TECHNOLOGIES CO., LTD L16B45 Preliminary CMOS IC UNISONIC TECHNOLOGIES CO., LTD L16B45 Preliminary CMOS IC 16-BIT CONSTANT CURRENT LED SINK DRIVER DESCRIPTION The UTC L16B45 is designed for LED displays. UTC L16B45 contains a serial buffer and data latches

More information

The Devices. Devices

The Devices. Devices The The MOS Transistor Gate Oxyde Gate Source n+ Polysilicon Drain n+ Field-Oxyde (SiO 2 ) p-substrate p+ stopper Bulk Contact CROSS-SECTION of NMOS Transistor Cross-Section of CMOS Technology MOS transistors

More information

ESE 570: Digital Integrated Circuits and VLSI Fundamentals

ESE 570: Digital Integrated Circuits and VLSI Fundamentals ESE 570: Digital Integrated Circuits and VLSI Fundamentals Lec 10: February 15, 2018 MOS Inverter: Dynamic Characteristics Penn ESE 570 Spring 2018 Khanna Lecture Outline! Inverter Power! Dynamic Characteristics

More information

ECE 342 Electronic Circuits. Lecture 6 MOS Transistors

ECE 342 Electronic Circuits. Lecture 6 MOS Transistors ECE 342 Electronic Circuits Lecture 6 MOS Transistors Jose E. Schutt-Aine Electrical & Computer Engineering University of Illinois jesa@illinois.edu 1 NMOS Transistor Typically L = 0.1 to 3 m, W = 0.2

More information

EE105 - Fall 2006 Microelectronic Devices and Circuits

EE105 - Fall 2006 Microelectronic Devices and Circuits EE105 - Fall 2006 Microelectronic Devices and Circuits Prof. Jan M. Rabaey (jan@eecs) Lecture 7: MOS Transistor Some Administrative Issues Lab 2 this week Hw 2 due on We Hw 3 will be posted same day MIDTERM

More information

Lecture 11 VTCs and Delay. No lab today, Mon., Tues. Labs restart next week. Midterm #1 Tues. Oct. 7 th, 6:30-8:00pm in 105 Northgate

Lecture 11 VTCs and Delay. No lab today, Mon., Tues. Labs restart next week. Midterm #1 Tues. Oct. 7 th, 6:30-8:00pm in 105 Northgate EE4-Fall 2008 Digital Integrated Circuits Lecture VTCs and Delay Lecture # Announcements No lab today, Mon., Tues. Labs restart next week Midterm # Tues. Oct. 7 th, 6:30-8:00pm in 05 Northgate Exam is

More information

EE 330 Lecture 16. Devices in Semiconductor Processes. MOS Transistors

EE 330 Lecture 16. Devices in Semiconductor Processes. MOS Transistors EE 330 Lecture 16 Devices in Semiconductor Processes MOS Transistors Review from Last Time Model Summary I D I V DS V S I B V BS = 0 0 VS VT W VDS ID = μcox VS VT VDS VS V VDS VS VT L T < W μc ( V V )

More information

Circuits. L2: MOS Models-2 (1 st Aug. 2013) B. Mazhari Dept. of EE, IIT Kanpur. B. Mazhari, IITK. G-Number

Circuits. L2: MOS Models-2 (1 st Aug. 2013) B. Mazhari Dept. of EE, IIT Kanpur. B. Mazhari, IITK. G-Number EE610: CMOS Analog Circuits L: MOS Models- (1 st Aug. 013) B. Mazhari Dept. of EE, IIT Kanpur 3 NMOS Models MOS MODEL Above Threshold Subthreshold ( GS > TN ) ( GS < TN ) Saturation ti Ti Triode ( DS >

More information

2007 Fall: Electronic Circuits 2 CHAPTER 10. Deog-Kyoon Jeong School of Electrical Engineering

2007 Fall: Electronic Circuits 2 CHAPTER 10. Deog-Kyoon Jeong School of Electrical Engineering 007 Fall: Electronic Circuits CHAPTER 10 Digital CMOS Logic Circuits Deog-Kyoon Jeong dkjeong@snu.ac.kr k School of Electrical Engineering Seoul lnational luniversity it Introduction In this chapter, we

More information

VLSI Design and Simulation

VLSI Design and Simulation VLSI Design and Simulation CMOS Inverters Topics Inverter VTC Noise Margin Static Load Inverters CMOS Inverter First-Order DC Analysis R p V OL = 0 V OH = R n =0 = CMOS Inverter: Transient Response R p

More information

EE 560 MOS TRANSISTOR THEORY PART 2. Kenneth R. Laker, University of Pennsylvania

EE 560 MOS TRANSISTOR THEORY PART 2. Kenneth R. Laker, University of Pennsylvania 1 EE 560 MOS TRANSISTOR THEORY PART nmos TRANSISTOR IN LINEAR REGION V S = 0 V G > V T0 channel SiO V D = small 4 C GC C BC substrate depletion region or bulk B p nmos TRANSISTOR AT EDGE OF SATURATION

More information