74HC245; 74HCT245. Octal bus tranceiver; 3-state. The 74HC245; 74HCT245 is similar to the 74HC640; 74HCT640 but has true (non-inverting) outputs.

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1 Rev January 2005 Product data sheet 1. General description 2. Features 3. Quick reference data The is a high-speed Si-gate CMOS device and is pin compatible with Low-Power Schottky TTL (LSTTL). The is an octal transceiver featuring non-inverting 3-state bus compatible outputs in both send and receive directions. The features an output enable input (OE) for easy cascading and a send/receive input (DIR) for direction control. OE controls the outputs so that the buses are effectively isolated. The is similar to the 74HC640; 74HCT640 but has true (non-inverting) outputs. Octal bidirectional bus interface Non-inverting 3-state outputs Multiple package options Complies with JEDEC standard no. 7 ESD protection: HBM EI/JESD B exceeds 2000 V MM EI/JESD exceeds 200 V Specified from 40 C to+85 C and from 40 C to +125 C Table 1: Quick reference data GND = 0 V; T amb =25 C; t r =t f = 6 ns. Type 74HC245 t PHL, t PLH propagation delay C L =15pF; ns n to Bn or Bn to n V CC =5V C I input capacitance pf C I/O input/output capacitance pf C PD power dissipation capacitance per transceiver V I = GND to V CC [1] pf Type 74HCT245 t PHL, t PLH propagation delay n to Bn or Bn to n C L =15pF; V CC =5V ns

2 4. Ordering information Table 1: Quick reference data continued GND = 0 V; T amb =25 C; t r =t f = 6 ns. C I input capacitance pf C I/O input/output capacitance pf C PD power dissipation capacitance per transceiver V I = GND to V CC 1.5 V [1] C PD is used to determine the dynamic power dissipation (P D in µw): P D =C PD V 2 CC f i N+ (C L V 2 CC f o ) where: f i = input frequency in MHz; f o = output frequency in MHz; C L = output load capacitance in pf; V CC = supply voltage in V; N = number of inputs switching; (C L V 2 CC f o ) = sum of outputs. [1] pf Table 2: Type number Ordering information Package Temperature range Name Description Version 74HC245N 40 C to +125 C DIP20 plastic dual in-line package; 20 leads (300 mil) SOT HC245D 40 C to +125 C SO20 plastic small outline package; 20 leads; SOT163-1 body width 7.5 mm 74HC245PW 40 C to +125 C TSSOP20 plastic thin shrink small outline package; 20 leads; SOT360-1 body width 4.4 mm 74HC245DB 40 C to +125 C SSOP20 plastic shrink small outline package; 20 leads; SOT339-1 body width 5.3 mm 74HC245BQ 40 C to +125 C DHVQFN20 plastic dual-in-line compatible thermal enhanced very thin quad flat package no leads; 20 terminals; body mm SOT HCT245N 40 C to +125 C DIP20 plastic dual in-line package; 20 leads (300 mil) SOT HCT245D 40 C to +125 C SO20 plastic small outline package; 20 leads; SOT163-1 body width 7.5 mm 74HCT245PW 40 C to +125 C TSSOP20 plastic thin shrink small outline package; 20 leads; SOT360-1 body width 4.4 mm 74HCT245DB 40 C to +125 C SSOP20 plastic shrink small outline package; 20 leads; SOT339-1 body width 5.3 mm 74HCT245BQ 40 C to +125 C DHVQFN20 plastic dual-in-line compatible thermal enhanced very thin quad flat package no leads; 20 terminals; body mm SOT764-1 Product data sheet Rev January of 22

3 5. Functional diagram 1 DIR OE B0 B G3 3EN1 3EN B2 B B4 B B mna B7 11 mna174 Fig 1. Logic symbol Fig 2. IEC logic symbol Product data sheet Rev January of 22

4 6. Pinning information 6.1 Pinning terminal 1 index area DIR VCC OE Fig 3. DIR GND aac V CC 19 OE 18 B0 17 B1 16 B2 15 B3 14 B4 13 B5 12 B6 11 B7 Pin configuration DIP20, SO20, SSOP20 and TSSOP20 Fig GND (1) GND 11 B7 Transparent top view B0 B1 B2 B3 B4 B5 B6 001aac432 (1) The die substrate is attached to this pad using conductive die attach material. It can not be used as supply pin or input Pin configuration DHVQFN Pin description Table 3: Pin description Symbol Pin Description DIR 1 direction control 0 2 data input/output 1 3 data input/output 2 4 data input/output 3 5 data input/output 4 6 data input/output 5 7 data input/output 6 8 data input/output 7 9 data input/output GND 10 ground (0 V) B7 11 data input/output B6 12 data input/output B5 13 data input/output B4 14 data input/output B3 15 data input/output B2 16 data input/output Product data sheet Rev January of 22

5 7. Functional description Table 3: Pin description continued Symbol Pin Description B1 17 data input/output B0 18 data input/output OE 19 output enable input (active LOW) V CC 20 supply voltage 8. Limiting values 7.1 Function table Table 4: Function table [1] Input Input/output OE DIR n Bn L L = B input L H input B = H X Z Z [1] H = HIGH voltage level; L = LOW voltage level; X = don t care; Z = high-impedance OFF-state. Table 5: Limiting values In accordance with the bsolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V). Symbol Parameter Conditions Min Max Unit V CC supply voltage V I IK input diode current V I < 0.5 V or V I >V CC V - ±20 m I OK output diode current V O < 0.5 V or - ±20 m V O >V CC V I O output source or sink V O = 0.5 V to V CC V - ±35 m current I CC, I GND V CC or GND current - ±70 m T stg storage temperature C P tot total power dissipation [1] DIP20 package mw SO20, SSOP20, TSSOP20 and DHVQFN20 packages mw [1] For DIP20 packages: above 70 C, P tot derates linearly with 12 mw/k. For SO20 packages: above 70 C, P tot derates linearly with 8 mw/k. For SSOP20 and TSSOP20 packages: above 60 C, P tot derates linearly with 5.5 mw/k. For DHVQFN20 packages: above 60 C, P tot derates linearly with 4.5 mw/k. Product data sheet Rev January of 22

6 9. Recommended operating conditions Table 6: 10. Static characteristics Recommended operating conditions Type 74HC245 V CC supply voltage V V I input voltage 0 - V CC V V O output voltage 0 - V CC V t r, t f input rise and fall V CC = 2.0 V ns times V CC = 4.5 V ns V CC = 6.0 V ns T amb ambient temperature C Type 74HCT245 V CC supply voltage V V I input voltage 0 - V CC V V O output voltage 0 - V CC V t r, t f input rise and fall V CC = 4.5 V ns times T amb ambient temperature C Table 7: Static characteristics type 74HC245 t recommended operating conditions; voltages are referenced to GND (ground = 0 V). T amb =25 C V IH HIGH-level input voltage V CC = 2.0 V V V CC = 4.5 V V V CC = 6.0 V V V IL LOW-level input voltage V CC = 2.0 V V V CC = 4.5 V V V CC = 6.0 V V V OH HIGH-level output voltage V I =V IH or V IL I O = 20 µ; V CC = 2.0 V V I O = 20 µ; V CC = 4.5 V V I O = 20 µ; V CC = 6.0 V V I O = 6.0 m; V CC = 4.5 V V I O = 7.8 m; V CC = 6.0 V V Product data sheet Rev January of 22

7 Table 7: Static characteristics type 74HC245 continued t recommended operating conditions; voltages are referenced to GND (ground = 0 V). V OL LOW-level output voltage V I =V IH or V IL I O =20µ; V CC = 2.0 V V I O =20µ; V CC = 4.5 V V I O =20µ; V CC = 6.0 V V I O = 6.0 m; V CC = 4.5 V V I O = 7.8 m; V CC = 6.0 V V I LI input leakage current V I =V CC or GND; V CC = 6.0 V - - ±0.1 µ I OZ OFF-state output current V I =V IH or V IL ; V O =V CC or GND; - - ±0.5 µ V CC = 6.0 V I CC quiescent supply current V I =V CC or GND; I O =0; µ V CC = 6.0 V C I input capacitance pf C I/O input/output capacitance pf T amb = 40 C to +85 C V IH HIGH-level input voltage V CC = 2.0 V V V CC = 4.5 V V V CC = 6.0 V V V IL LOW-level input voltage V CC = 2.0 V V V CC = 4.5 V V V CC = 6.0 V V V OH HIGH-level output voltage V I =V IH or V IL I O = 20 µ; V CC = 2.0 V V I O = 20 µ; V CC = 4.5 V V I O = 20 µ; V CC = 6.0 V V I O = 6.0 m; V CC = 4.5 V V I O = 7.8 m; V CC = 6.0 V V V OL LOW-level output voltage V I =V IH or V IL I O =20µ; V CC = 2.0 V V I O =20µ; V CC = 4.5 V V I O =20µ; V CC = 6.0 V V I O = 6.0 m; V CC = 4.5 V V I O = 7.8 m; V CC = 6.0 V V I LI input leakage current V I =V CC or GND; V CC = 6.0 V - - ±1.0 µ I OZ OFF-state output current V I =V IH or V IL ; V O =V CC or GND; - - ±5.0 µ V CC = 6.0 V I CC quiescent supply current V I =V CC or GND; I O =0; V CC = 6.0 V µ T amb = 40 C to +125 C V IH HIGH-level input voltage V CC = 2.0 V V V CC = 4.5 V V V CC = 6.0 V V Product data sheet Rev January of 22

8 Table 7: Static characteristics type 74HC245 continued t recommended operating conditions; voltages are referenced to GND (ground = 0 V). V IL LOW-level input voltage V CC = 2.0 V V V CC = 4.5 V V V CC = 6.0 V V V OH HIGH-level output voltage V I =V IH or V IL - I O = 20 µ; V CC = 2.0 V V I O = 20 µ; V CC = 4.5 V V I O = 20 µ; V CC = 6.0 V V I O = 6.0 m; V CC = 4.5 V V I O = 7.8 m; V CC = 6.0 V V V OL LOW-level output voltage V I =V IH or V IL - I O =20µ; V CC = 2.0 V V I O =20µ; V CC = 4.5 V V I O =20µ; V CC = 6.0 V V I O = 6.0 m; V CC = 4.5 V V I O = 7.8 m; V CC = 6.0 V V I LI input leakage current V I =V CC or GND; V CC = 6.0 V - - ±1.0 µ I OZ OFF-state output current V I =V IH or V IL ; V O =V CC or GND; - - ±10.0 µ V CC = 6.0 V I CC quiescent supply current V I =V CC or GND; I O =0; V CC = 6.0 V µ Table 8: Static characteristics type 74HCT245 t recommended operating conditions; voltages are referenced to GND (ground = 0 V). T amb =25 C V IH HIGH-level input voltage V CC = 4.5 V to 5.5 V V V IL LOW-level input voltage V CC = 4.5 V to 5.5 V V V OH HIGH-level output voltage V I =V IH or V IL ; V CC = 4.5 V I O = 20 µ V I O = 6 m V V OL LOW-level output voltage V I =V IH or V IL ; V CC = 4.5 V I O =20µ V I O = 6.0 m V I LI input leakage current V I =V CC or GND; V CC = 5.5 V - - ±0.1 µ I OZ OFF-state output current V I =V IH or V IL ; V CC = 5.5 V; V O =V CC or GND per input pin; other inputs at V CC or GND; I O =0 - - ±0.5 µ I CC quiescent supply current V I =V CC or GND; I O =0; V CC = 5.5 V µ Product data sheet Rev January of 22

9 Table 8: Static characteristics type 74HCT245 continued t recommended operating conditions; voltages are referenced to GND (ground = 0 V). I CC additional quiescent supply current per input pin V I =V CC 2.1 V; other inputs at V I =V CC or GND; V CC = 4.5 V to 5.5 V; I O =0 n or Bn inputs µ OE input µ DIR input µ C I input capacitance pf C I/O input/output capacitance pf T amb = 40 C to +85 C V IH HIGH-level input voltage V CC = 4.5 V to 5.5 V V V IL LOW-level input voltage V CC = 4.5 V to 5.5 V V V OH HIGH-level output voltage V I =V IH or V IL ; V CC = 4.5 V I O = 20 µ V I O = 6 m V V OL LOW-level output voltage V I =V IH or V IL ; V CC = 4.5 V I O =20µ V I O = 6.0 m V I LI input leakage current V I =V CC or GND; V CC = 5.5 V - - ±1.0 µ I OZ OFF-state output current V I =V IH or V IL ; V CC = 5.5 V; V O =V CC or GND per input pin; other inputs at V CC or GND; I O =0 - - ±5.0 µ I CC quiescent supply current V I =V CC or GND; I O =0; V CC = 5.5 V I CC additional quiescent supply current per input pin V I =V CC 2.1 V; other inputs at V I =V CC or GND; V CC = 4.5 V to 5.5 V; I O = µ n or Bn inputs µ OE input µ DIR input µ T amb = 40 C to +125 C V IH HIGH-level input voltage V CC = 4.5 V to 5.5 V V V IL LOW-level input voltage V CC = 4.5 V to 5.5 V V V OH HIGH-level output voltage V I =V IH or V IL ; V CC = 4.5 V I O = 20 µ V I O = 6 m V V OL LOW-level output voltage V I =V IH or V IL ; V CC = 4.5 V I O =20µ V I O = 6.0 m V I LI input leakage current V I =V CC or GND; V CC = 5.5 V - - ±1.0 µ I OZ OFF-state output current V I =V IH or V IL ; V CC = 5.5 V; V O =V CC or GND per input pin; other inputs at V CC or GND; I O =0 - - ±10 µ Product data sheet Rev January of 22

10 Table 8: Static characteristics type 74HCT245 continued t recommended operating conditions; voltages are referenced to GND (ground = 0 V). I CC quiescent supply current V I =V CC or GND; I O =0; V CC = 5.5 V I CC additional quiescent supply current per input pin 11. Dynamic characteristics V I =V CC 2.1 V; other inputs at V I =V CC or GND; V CC = 4.5 V to 5.5 V; I O = µ n or Bn inputs µ OE input µ DIR input µ Table 9: Dynamic characteristics type 74HC245 GND = 0 V; test circuit see Figure 7. T amb = 25 C t PHL, t PLH propagation delay n to Bn or Bn see Figure 5 to n V CC = 2.0 V ns V CC = 4.5 V ns V CC = 5.0 V; C L =15pF ns V CC = 6.0 V ns t PZH, t PZL 3-state output enable time OE to see Figure 6 n or OE to Bn V CC = 2.0 V ns V CC = 4.5 V ns V CC = 6.0 V ns t PHZ, t PLZ 3-state output disable time OE to see Figure 6 n or OE to Bn V CC = 2.0 V ns V CC = 4.5 V ns V CC = 6.0 V ns t THL, t TLH output transition time see Figure 5 V CC = 2.0 V ns V CC = 4.5 V ns V CC = 6.0 V ns C PD power dissipation capacitance per transceiver V I = GND to V CC [1] pf T amb = 40 C to +85 C t PHL, t PLH propagation delay n to Bn or Bn see Figure 5 to n V CC = 2.0 V ns V CC = 4.5 V ns V CC = 6.0 V ns Product data sheet Rev January of 22

11 Table 9: Dynamic characteristics type 74HC245 continued GND = 0 V; test circuit see Figure 7. t PZH, t PZL 3-state output enable time OE to n or OE to Bn [1] C PD is used to determine the dynamic power dissipation (P D in µw): P D =C PD V 2 CC f i N+ (C L V 2 CC f o ) where: f i = input frequency in MHz; f o = output frequency in MHz; C L = output load capacitance in pf; V CC = supply voltage in V; N = number of inputs switching; (C L V 2 CC f o ) = sum of outputs. see Figure 6 V CC = 2.0 V ns V CC = 4.5 V ns V CC = 6.0 V ns t PHZ, t PLZ 3-state output disable time OE to see Figure 6 n or OE to Bn V CC = 2.0 V ns V CC = 4.5 V ns V CC = 6.0 V ns t THL, t TLH output transition time see Figure 5 V CC = 2.0 V ns V CC = 4.5 V ns V CC = 6.0 V ns T amb = 40 C to +125 C t PHL, t PLH propagation delay n to Bn or Bn see Figure 5 to n V CC = 2.0 V ns V CC = 4.5 V ns V CC = 6.0 V ns t PZH, t PZL 3-state output enable time OE to see Figure 6 n or OE to Bn V CC = 2.0 V ns V CC = 4.5 V ns V CC = 6.0 V ns t PHZ, t PLZ 3-state output disable time OE to see Figure 6 n or OE to Bn V CC = 2.0 V ns V CC = 4.5 V ns V CC = 6.0 V ns t THL, t TLH output transition time see Figure 5 V CC = 2.0 V ns V CC = 4.5 V ns V CC = 6.0 V ns Product data sheet Rev January of 22

12 Table 10: Dynamic characteristics type 74HCT245 GND = 0 V; test circuit see Figure 7. T amb = 25 C t PHL, t PLH propagation delay n to Bn or Bn see Figure 5 to n V CC = 4.5 V ns V CC = 5.0 V; C L =15pF ns t PZH, t PZL 3-state output enable time OE to V CC = 4.5 V; see Figure ns n or OE to Bn t PHZ, t PLZ 3-state output disable time OE to V CC = 4.5 V; see Figure ns n or OE to Bn t THL, t TLH output transition time V CC = 4.5 V; see Figure ns C PD power dissipation capacitance per transceiver V I = GND to V CC 1.5 V [1] pf T amb = 40 C to +85 C t PHL, t PLH propagation delay n to Bn or Bn V CC = 4.5 V; see Figure ns to n t PZH, t PZL 3-state output enable time OE to V CC = 4.5 V; see Figure ns n or OE to Bn t PHZ, t PLZ 3-state output disable time OE to V CC = 4.5 V; see Figure ns n or OE to Bn t THL, t TLH output transition time V CC = 4.5 V; see Figure ns T amb = 40 C to +125 C t PHL, t PLH propagation delay n to Bn or Bn V CC = 4.5 V; see Figure ns to n t PZH, t PZL 3-state output enable time OE to V CC = 4.5 V; see Figure ns n or OE to Bn t PHZ, t PLZ 3-state output disable time OE to V CC = 4.5 V; see Figure ns n or OE to Bn t THL, t TLH output transition time V CC = 4.5 V; see Figure ns [1] C PD is used to determine the dynamic power dissipation (P D in µw): P D =C PD V 2 CC f i N+ (C L V 2 CC f o ) where: f i = input frequency in MHz; f o = output frequency in MHz; C L = output load capacitance in pf; V CC = supply voltage in V; N = number of inputs switching; (C L V 2 CC f o ) = sum of outputs. Product data sheet Rev January of 22

13 12. Waveforms n, Bn input V I GND V M V M t PHL t PLH V OH Bn, n output V OL 90 % V M V M 10 % t THL t TLH 001aac433 Fig 5. Measurement points are given in Table 11. V OL and V OH are typical voltage output drop that occur with the output load. Input (n, Bn) to output (Bn, n) propagation delays and output transition times t r t f OE input V I 90 % V M 10 % GND t PLZ t PZL output V CC LOW-to-OFF OFF-to-LOW V OL 10 % V M t PHZ t PZH output V OH HIGH-to-OFF OFF-to-HIGH GND outputs enabled 90 % outputs disabled V M outputs enabled 001aac479 Fig 6. Measurement points are given in Table 11. V OL and V OH are typical voltage output drop that occur with the output load. 3-state output enable and disable times Table 11: Measurement points Type Input Output V M V M 74HC V CC 0.5V CC 74HCT V 1.3 V Product data sheet Rev January of 22

14 V CC V CC PULSE GENERTOR V I D.U.T V O R L = 1 kω open R T C L 50 pf mgk563 Fig 7. Test data is given in Table 12. Definitions test circuit: R T = Termination resistance should be equal to output impedance Z o of the pulse generator. C L = Load capacitance including jig and probe capacitance. R L = Load resistor. Load circuitry for switching times Table 12: Test data Type Input Test V I t r, t f t PHL, t PLH t PZH, t PHZ t PZL, t PLZ 74HC245 V CC 6 ns open GND V CC 74HCT245 3 V 6 ns open GND V CC Product data sheet Rev January of 22

15 13. Package outline DIP20: plastic dual in-line package; 20 leads (300 mil) SOT146-1 D M E seating plane 2 L 1 Z 20 e b b 1 11 w M c (e ) 1 M H pin 1 index E mm scale DIMENSIONS (inch dimensions are derived from the original mm dimensions) UNIT mm inches max. 1 2 (1) (1) min. max. b b 1 c D E e e 1 L M E M H w (1) Z max Note 1. Plastic or metal protrusions of 0.25 mm (0.01 inch) maximum per side are not included. OUTLINE VERSION REFERENCES IEC JEDEC JEIT EUROPEN PROJECTION ISSUE DTE SOT146-1 MS-001 SC Fig 8. Package outline SOT146-1 (DIP20) Product data sheet Rev January of 22

16 SO20: plastic small outline package; 20 leads; body width 7.5 mm SOT163-1 D E X c y H E v M Z Q 2 1 ( ) 3 pin 1 index L L p θ 1 e b p 10 w M detail X mm scale DIMENSIONS (inch dimensions are derived from the original mm dimensions) UNIT mm inches max b p c D (1) E (1) e H (1) E L L p Q v w y Z Note 1. Plastic or metal protrusions of 0.15 mm (0.006 inch) maximum per side are not included θ o 8 o OUTLINE VERSION REFERENCES IEC JEDEC JEIT EUROPEN PROJECTION ISSUE DTE SOT E04 MS Fig 9. Package outline SOT163-1 (SO20) Product data sheet Rev January of 22

17 SSOP20: plastic shrink small outline package; 20 leads; body width 5.3 mm SOT339-1 D E X c y H E v M Z Q pin 1 index 2 1 ( ) 3 θ L L p 1 10 detail X e b p w M mm scale DIMENSIONS (mm are the original dimensions) UNIT b p c D (1) E (1) e H E L L p Q v w y Z (1) max. mm θ o 8 o 0 Note 1. Plastic or metal protrusions of 0.2 mm maximum per side are not included. OUTLINE VERSION REFERENCES IEC JEDEC JEIT SOT339-1 MO-150 EUROPEN PROJECTION ISSUE DTE Fig 10. Package outline SOT339-1 (SSOP20) Product data sheet Rev January of 22

18 TSSOP20: plastic thin shrink small outline package; 20 leads; body width 4.4 mm SOT360-1 D E X c y H E v M Z Q pin 1 index 2 1 ( ) 3 θ 1 10 w M e b p L detail X L p mm scale DIMENSIONS (mm are the original dimensions) UNIT b p c D (1) E (2) e H (1) E L L p Q v w y Z max. mm θ o 8 o 0 Notes 1. Plastic or metal protrusions of 0.15 mm maximum per side are not included. 2. Plastic interlead protrusions of 0.25 mm maximum per side are not included. OUTLINE VERSION REFERENCES IEC JEDEC JEIT SOT360-1 MO-153 EUROPEN PROJECTION ISSUE DTE Fig 11. Package outline SOT360-1 (TSSOP20) Product data sheet Rev January of 22

19 DHVQFN20: plastic dual in-line compatible thermal enhanced very thin quad flat package; no leads; 20 terminals; body 2.5 x 4.5 x 0.85 mm SOT764-1 D B E 1 c terminal 1 index area detail X terminal 1 index area e 1 e b 2 9 v M w M C C B y 1 C C y L 1 10 E h e D h X mm scale DIMENSIONS (mm are the original dimensions) UNIT (1) max. 1 b c D (1) D h E (1) E h e e 1 L v w y y 1 mm Note 1. Plastic or metal protrusions of mm maximum per side are not included. OUTLINE VERSION REFERENCES IEC JEDEC JEIT SOT MO EUROPEN PROJECTION ISSUE DTE Fig 12. Package outline SOT764-1 (DHVQFN20) Product data sheet Rev January of 22

20 14. Revision history Table 13: Document ID Revision history Release date Data sheet status Change notice Doc. number Supersedes 74HC_HCT245_ Product data sheet HC_HCT245_CNV_2 Modifications: The format of this data sheet is redesigned to comply with the new presentation and information standard of Philips Semiconductors Section 4 Ordering information, Section 6 Pinning information and Section 13 Package outline are modified to include the DHVQFN20 package. 74HC_HCT245_CNV_ Product specification Product data sheet Rev January of 22

21 15. Data sheet status Level Data sheet status [1] Product status [2] [3] Definition I Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. II Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. III Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). [1] Please consult the most recently issued data sheet before initiating or completing a design. [2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL [3] For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. 16. Definitions 17. Disclaimers Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition Limiting values given are in accordance with the bsolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. pplication information pplications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Life support These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes Philips Semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status Production ), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. 18. Contact information For additional information, please visit: For sales office addresses, send an to: sales.addresses@ Product data sheet Rev January of 22

22 19. Contents 1 General description Features Quick reference data Ordering information Functional diagram Pinning information Pinning Pin description Functional description Function table Limiting values Recommended operating conditions Static characteristics Dynamic characteristics Waveforms Package outline Revision history Data sheet status Definitions Disclaimers Contact information Koninklijke Philips Electronics N.V ll rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 31 January 2005 Document number: Published in The Netherlands