EE 434 Lecture 13. Basic Semiconductor Processes Devices in Semiconductor Processes

Transcription

1 EE 434 Lecture 3 Basic Semiconductor Processes Devices in Semiconductor Processes

2 Quiz 9 The top view of a device fabricated in a bulk CMOS process is shown in the figure below a) Identify the device b) Sketch a cross-section along the AA section line A A Metal Poly Active p-select n-well Contact

3 And the number is

4 Quiz 9 Solution a) p-channel MOS Transistor A A

5 Review from Last Time Process Flow is a recipe for the process Shows what can and can not be made Gives insight into performance capabilities and limitations Designer has control only of top view Some masks may be automatically generated Geometric Description File (GDF) contains all information about a layout and serves as interface with foundry

6 C D Guard Rings and Bulk Attachment A A B B C D

7 Basic Devices and Device Models Resistor Diode Capacitor MOSFET BJT

8 Basic Devices and Device Models Resistor Diode Capacitor MOSFET BJT

9 Device Modeling Goal: Obtain a mathematical relationship between the port variables of a device.

10 Device Modeling Goal: Obtain a mathematical relationship between the port variables of a device. Without loss of generality, one terminal can be selected as a reference (this can be done in one of 4 ways!) I 4-Terminal Device I 2 I 3 V V 2 V 3 Thus modeling problem is that of determining mathematical relationship Between the six variables I, I 2, I 3, V, V 2, and V 3

11 Device Modeling Goal: Obtain a mathematical relationship between the port variables of a device. I 4-Terminal Device I 2 I 3 V V 2 V 3 Any 3 of the 6 variables {I, I 2, I 3, V, V 2, V 3 } can be selected as independent variables and the remaining 3 variables can be selected as dependent variables 6 3 6! = = 3!3! There are 20 ways this can be done Thus there are 4x20=80 different mathematical representations of a 4-terminal device and all predict identical performance!

12 Device Modeling Goal: Obtain a mathematical relationship between the port variables of a device. I 4-Terminal Device I 2 I 3 V V 2 V 3 By convention, will pick { V, V 2, V 3 } as the independent variables and {I, I 2, I 3 } as the dependent variables

13 Device Modeling Goal: Obtain a mathematical relationship between the port variables of a device. I 4-Terminal Device I 2 I 3 V V 2 V 3 Modeling Goal: Obtain f, f 2, and f 3 that sufficiently accurately characterize the device I I I = f = f = f ( V,V,V ) ( V,V,V ) 2 2 ( V ),V 2,V3 3 3

14 Device Modeling Goal: Obtain a mathematical relationship between the port variables of a device. I I I I I = f = f = f 2 3 = f = f ( V,V 2,V3 ) ( V,V 2,V3 ) ( V ),V 2,V3 2 ( V,V 2 ) ( V,V ) 2 I = f V ( ) }

15 Resistors Generally thin-film devices Almost any thin-film layer can be used as a resistor Diffused resistors Poly Resistors Metal Resistors Thin-film adders (SiCr or NiCr) Subject to process variations, gradient effects and local random variations Often temperature and voltage dependent Ambient temperature Local Heating Nonlinearities often a cause of distortion when used in circuits Trimming possible resistors Laser,links,switches

16 Resistor Model W d L V I Model: R = V I

17 Resistivity Volumetric measure of conduction capability of a material Area is A units : ohm cm L R ρ = AR L for homogeneous material, ρ A, R, L

18 Sheet Resistance W d L R RW R = ( for d << w, d << L ) units : ohms / L for homogeneous materials, R is independent of W, L, R

19 Relationship between ρ and R R = ρ = RW L AR L ρ = A W R = W d W A ρ = R W A = W R = d x d R Number of squares, N S, often used instead of L / W in determining resistance of film resistors R=R N S

20 Example W L R =?

21 Example L L = W N S W

22 Example R =?

23 Example R =? N S =8.4 R = R (8.4)

24 Corners in Film Resistors Corner Rule of Thumb:.55 squares for each corner

25 Example 2 Determine R if R = 00 Ω /

26 Example N S =7. R = (7.) R R = 70 Ω 2 3

27 Resistivity of Materials used in Semiconductor Processing Cu:.7E-6 Ωcm Al: 2.7E-4 Ωcm Gold: 2.4E-6 Ωcm Platinum: 3.0E-6 Ωcm n-si:.25 to 5 Ωcm intrinsic Si: 2.5E5 Ωcm SiO 2 : E4 Ωcm

28 Temperature Coefficients Used for indicating temperature sensitivity of resistors & capacitors For a resistor: TCR = R dr dt 6 0 op. temp ppm C This diff eqn can easily be solved if TCR is a constant R R ( T ) R( T ) 2 = e T 2 T 0 6 TCR ( ) ( ) ( ) T R T + T T TCR 0 Identical Expressions for Capacitors

29 Voltage Coefficients Used for indicating voltage sensitivity of resistors & capacitors For a resistor: VCR = R dr dv 6 0 ref voltage ppm This diff eqn can easily be solved if VCR is a constant R ( V ) R( V ) 2 = e V 2 V 0 6 VCR ( ) ( ) ( ) V R V + V V 2 6 R 2 V VCR 0 Identical Expressions for Capacitors

30 Temperature and Voltage Coefficients Temperature and voltage coefficients often quite large for diffused resistors Temperature and voltage coefficients often quite small for poly and metal resistors

31 End of Lecture 3