Carbon Nanotubes for Interconnect Applications Franz Kreupl, Andrew P. Graham, Maik Liebau, Georg S. Duesberg, Robert Seidel, Eugen Unger

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1 Carbon Nanotubes for Interconnect Applications Franz Kreupl, Andrew P. Graham, Maik Liebau, Georg S. Duesberg, Robert Seidel, Eugen Unger Infineon Technologies Corporate Research Munich, Germany

2 Outline of Presentation What are carbon nanotubes (CNTs) Applications as devices & interconnects Short channel & power transistor Current density and resistance in CNTs How do nanotubes grow? Focus on integration schemes 20 nm sized nanotube vias Summary Acknowledgments

3 What are carbon nanotubes? Just roll up a graphene sheet and you will get a single-walled carbon nanotube (SWNT) graphene sheet Single-walled Nanotube (SWCNT) Multi-walled Nanotubes (MWCNT)

4 Carbon nanotube fact sheet Diameter: nm Electrical conductivity: metallic or semiconducting ballistic transport mobility ~ cm 2 /Vs (Si ~ 450 cm 2 /Vs) current density > 10 9 A/cm 2 (Cu ~ 10 6 A/cm 2 ) Thermal conductivity ~ 3000 W/Km (Cu ~ 400 W/Km) Thermal, chemical, and mechanical stability excellent

5 Possible Applications of Carbon Nanotubes Transistors outperform silicon Source Gate Drain Catalyst Interconnects: vias & contact holes high current densities low resistance Gate Oxide CNT

6 Short Channel Nanotube Transistor V ds ~ V I on /I off > 10 6 g = 6.75 µs/tube ~ 7900 S/m no ambipolar behavior Seidel et al., Nano Letters (2004) Ids [A] 100µ 10µ 18 nm Channel 1µ 200 mv/dec 100n 10n 1n 100p V ds = -0.4V 10p Vgs [V]

7 Nanotube Power Transistor current [A] 3m 2m 1m 2.4 1V V ds = 1 Volt ~ 300 tubes paralleled gate field [V/nm] Seidel et al., Nano Letters (2004)

8 Interconnect Applications of Carbon Nanotubes Current density [A/cm 2 ] 8.0M local via intermediate 6.0M via (ITRS) 4.0M 2.0M node [nm] high current density size-effect in metals electromigration reliability use carbon nanotubes as interconnects

9 Contact Holes & Vias Made of Carbon Nanotubes Copper voids Copper Single Multi-walled Nanotube Via Array of Multi-walled or Single-walled Nanotubes Via

10 Current density and resistance of nanotubes current densities exceeding 10 9 A/cm 2 are routinely obtained in experiments resistance varies for SWCNT and MWCNT SWCNTs: smallest achievable resistance: 6.5 kohm MWCNTs: smallest achievable resistance varies between kohm (depends on the number of contacted shells)

11 Difference in density of states SWCNT ~1nm MWCNT ~20 nm E Fermi E Fermi MWCNTs are easily doped by charge transfer additional DOS is available lower R not possible for SWCNTs

12 Resistance of Vias filled with CNTs resistance [ Ohm ] 1M SWCNT-Array 100k Cu-wire 700 nm 10k MWCNT 1k diameter [ nm ] 0.7 nm SW-CNT-Array MW-CNT area arrays of SW-CNTs would be the best conductor MW-CNT are better than metals for < 15 nm (doping possible)

13 resistance [Ohm] Resistance of Vias filled with 1 Single-Walled CNTs /µm^ /µm^2 1E6/µm^ via diameter [nm] densities in the order of 1/nm 2 are required growth of SWCNTs with ~ 0.1/nm 2

14 resistance [Ω] Length dependent resistance 100M 10M 1M 100k 10k (SWCNT) measured ballistic limit 1k 100n 1µ 10µ 100µ 1m 10m length [m] 4-6 kω/µm + contact resistance similar values for outer shell of MWCNTs

15 resistivity [Ωcm] Length dependence of resistivity 10-5 W (no size-effect) 10-6 Cu (no size-effect) SWCNT SWCNT exp. ballistic 10n 100n 1µ 10µ 100µ 1m 10m length [m] better than Cu for length > 1µm material parameter has length dependence use SWCNT in high aspect ratio structures CNT: free mean path of 1 µm R 500 nm = R 1000 nm for Cu ~40 nm R 20 nm = R 40 nm

16 Growth of Nanotubes Catalytic Growth by CVD (suitable) catalyst + energy (temperature)+ specific gas Fe, Ni, Co,...etc C CH4, C2H2, CH3CH2OH gas, reactant gas, reactant catalyst nanocluster nanowire nucleation nanowire growth The catalyst support, i.e., the substrate-catalyst interaction is also very important growth stops, if the particle is covered with a layer of amorphous carbon

17 Growth of Nanotubes Ni-catalyst ~ 5nm NATURE VOL JANUARY 2004 Stig Helveg et al.

18 Growth of Nanotubes Ni-catalyst ~ 5nm walls of a MWCNT NATURE VOL JANUARY 2004 Stig Helveg et al. this process needs to happen at the bottom of a via or contact hole

19 Growth of Nanotubes bottom growth tip growth

20 Wafer level growth dense growth at lithographically defined locations

21 How to create a CNT via or contact hole? Via in oxide catalyst SiO 2 Ta/Cu How to bring a fertile catalyst at the bottom of a via? 3 different groups (Infineon, Fujitsu, NASA), 2 approaches

22 Bottom up approach (NASA) carbon fibers grown by plasma-enhanced growth bias voltage creates perpendicular oriented fibers Merkulov et al. APL 80, 2002

23 Bottom up approach (NASA) deposit catalyst first bias voltage creates perpendicular oriented fibers Intermetal dielectric deposition later metal deposition catalyst patterning fiber growth Top Metal deposition CMP TEOS CVD

24 Bottom up approach (NASA) Li et al., APL(82)15,(2003)

25 Bottom up approach (NASA) + catalyst first + successful CNT growth + lithographical definition - carbon fibers (no tubes) low sheet alignment - low density - low precision (tilt fibers) - low overlay accuracy - high resistance ~300 kohm per tube Li et al., APL(82)15,(2003) Meyyappan et al., Plasma Sources Sci. Technol. 12 (2003)

26 Buried catalyst approach (Infineon, Fujitsu) resist via definition by resist oxide catalyst metal

27 Buried catalyst approach resist via etch stop on catalyst oxide problem: etch stop on catalyst catalyst metal

28 Buried catalyst approach resist strip oxide catalyst resist strip metal

29 Buried catalyst approach nanotube nanotube growth Infineon: CVD Fujitsu: PECVD oxide catalyst metal

30 Buried catalyst approach 2µm vias and contact holes (Fujitsu) resistance: 135 kohm per tube Nihei et al., IITC 2004, San Francisco

31 Buried catalyst approach 400 nm vias and contact holes resistance: 10 kohm per tube Kreupl, Microel. Eng. 64, 2002

32 Quality of the tubes number of shells and shell alignment α = 0 α 0 graphitic planes direction of current flow α catalyst catalyst tube axis ρ(α)= ρ a sin 2 (90 - α) + ρ c cos 2 (90 - α) Zhang et al,apl, 2004

33 Quality of the tubes 10 shells α = 18 7 shells α = 0 25 shells α = 0

34 20 nm vias and contact holes ~20 nm nm etch via stop on catalyst particle formation nanotube growth single MWCNT in 20 nm via at lithographically defined location

35 20 nm vias and contact holes a nanotube protrudes from every hole

36 Current [µa] 20 nm vias and contact holes resistance and current densitiy resistance [Ohm] 1M 100k 10k Voltage [V] 1k Annealing [ C] Resistance approx. 8kΩ Current Densities > A/cm 2

37 resistance [kω] nm vias and contact holes statistics for contacts with Pd or Ti top contacts Pd-Contacts v i a n u m b e r resistance [kω] Ti-Contacts v i a n u m b e r resistance is dominated by top and bottom contact & the ability to contact all shells

38 20 nm nanotube via chain reliability test for 2 nanotube via in series resistance [kohm] current density: > 10 7 A/cm time [h] 26 kohm per tube

39 Summary Properties of Carbon Nanotubes Motivation: Interconnects & transistors of the future Short channel transistor & Power transistor length dependence of the resistance & specific resistivity current density and resistance Growth of carbon nanotubes Integration issues Bottom up approach (NASA) Buried catalyst approach ( IFX, Fujitsu) first end-of-the-roadmap sized interconnects made of MWCNTs 20 nm via chain main problem: density of tubes & integration issues

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